CN104378070A - Power management circuit of radio frequency amplifiers and radio frequency transceiver - Google Patents
Power management circuit of radio frequency amplifiers and radio frequency transceiver Download PDFInfo
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- CN104378070A CN104378070A CN201410272905.4A CN201410272905A CN104378070A CN 104378070 A CN104378070 A CN 104378070A CN 201410272905 A CN201410272905 A CN 201410272905A CN 104378070 A CN104378070 A CN 104378070A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
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- Power Engineering (AREA)
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Abstract
The invention is suitable for the field of communication and provides a power management circuit of radio frequency amplifiers. The power management circuit comprises a switch drive unit, switch units and decoupling capacitors, wherein the input end of the switch drive unit is connected with the input end of a control signal, the output end of the switch drive unit is connected with the control ends of at least two switch units, the input end of each switch unit is connected with the input end of a power supply, the output end of each switch unit is only connected with the control end of one radio frequency amplifier, the low-frequency decoupling capacitor, the medium-frequency decoupling capacitor and the high-frequency decoupling capacitor are in parallel connection between the input end of each switch unit and the ground, and the switch output decoupling capacitor is connected with the output end of each switch unit and the ground. According to the power management circuit, noise led into the position between each switch unit and the corresponding radio frequency amplifier can be lowered, the number and capacity of the capacitors can be reduced, the charging and discharging effect of the capacitors can be reduced and the response speed of the power supplies are improved.
Description
Technical field
The invention belongs to the communications field, particularly relate to electric power management circuit and the radio-frequency (RF) transceiver of radio frequency amplifier.
Background technology
In the communication system of time division duplex (English full name is Time-division duplex, and English abbreviation is TDD) pattern, the transmitting-receiving time of signal is separated.In order to reduce the power consumption of radio-frequency (RF) transceiver, needing the power circuit of radio frequency transceiver to manage, when making radio-frequency (RF) transceiver at the transmission time slot of signal or there is no Signal reception, closing the power supply of receive channel; And at the receiving slot of signal or when not having signal to send, close the power supply of transmitting channel.So both can reduce the consumption of electric energy, and also can prevent the mutual interference between transceiver channel.
The electric power management circuit of existing radio-frequency (RF) transceiver, more common a kind of be the opening and closing carrying out controlling to realize channel by the voltage of radio frequency amplifier collector electrode.Multiple radio frequency amplifier is controlled by a switch control module and corresponding switch drive module.And must keep at a certain distance away between multiple radio frequency amplifier, to reduce mutual interference.When being powered by the multiple radio frequency amplifier kept at a certain distance away of electric power management circuit centralized control, longer power supply cabling easily introduces interference signal, after the filtering of introducing coupling capacitance, due to the charging and discharging effects of coupling capacitance, causes the response speed of power supply slow.
Summary of the invention
The object of the embodiment of the present invention is the electric power management circuit providing a kind of radio frequency amplifier, to solve the slow problem of prior art power supply response speed.
The embodiment of the present invention is achieved in that a kind of electric power management circuit of radio frequency amplifier, and described circuit comprises switch drive unit, switch element, low frequency decoupling capacitor, intermediate frequency decoupling capacitor, high frequency decoupling capacitor and switch and exports decoupling capacitor, wherein,
The input of the input connection control signal of described switch drive unit, the output of described switch drive unit is connected with the control end of at least two described switch elements;
The input of described switch element is connected with the input of power supply, and the output of described switch element has and is only connected with the control end of a radio frequency amplifier;
Between the input that described low frequency decoupling capacitor, intermediate frequency decoupling capacitor, high frequency decoupling capacitor are parallel to described switch element and ground;
Between the output that described switch output decoupling capacitor is connected to described switch element and ground.
Another object of the embodiment of the present invention is to provide a kind of radio-frequency (RF) transceiver, and described radio-frequency (RF) transceiver comprises the electric power management circuit of above-mentioned radio frequency amplifier.
In embodiments of the present invention, when there being control signal to input, by described switch drive unit, described control signal is converted into the control signal that can drive described switch element, thus the open and close controlling to switch element, when switching means conductive, power supply is connected to the control end of described radio frequency amplifier, when switch element ends, the control end of radio frequency amplifier does not have voltage, thus the corresponding opening and closing controlling radio frequency amplifier.Because described in the embodiment of the present invention, switch drive unit is connected with at least two switch elements, and the output of each switch element is directly connected with the control end of radio frequency amplifier, even if when making a good distance off between radio frequency amplifier above on two or two, also can provide by switch element the control signal driving radio frequency amplifier nearby, reduce by the noise introduced between switch element and the control end of radio frequency amplifier, the corresponding configuration reducing filter capacitor.Due to the minimizing of filter capacitor, the efficiency for charge-discharge of electric capacity can be reduced, improve the response speed of power supply.
Accompanying drawing explanation
Fig. 1 is the structural representation of the electric power management circuit of the radio frequency amplifier that the specific embodiment of the invention provides;
Fig. 2 is the electrical block diagram of the inverter of a kind of common TTL NAND gate formation that the specific embodiment of the invention provides;
Fig. 3 is a kind of common CMOS inverter structure schematic diagram that the specific embodiment of the invention provides;
The structural representation comprising the electric power management circuit of two radio frequency amplifiers that Fig. 4 provides for the specific embodiment of the invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The embodiment of the present invention can be used for controlling the switch of multiple switching device simultaneously, the signal transmitting and receiving being particularly useful for the TDD mode in wireless communication system controls, the opening and closing of two groups or radio frequency amplifier more than two can be controlled by control signal, the response speed of effective its power supply of control, thus improve the accuracy that receiving and transmitting signal in time division duplex communication is controlled.Illustrate below in conjunction with embodiment
Fig. 1 shows the structural representation of the electric power management circuit of the radio frequency amplifier that the embodiment of the present invention provides, and details are as follows:
The electric power management circuit of radio frequency amplifier described in the embodiment of the present invention, comprises switch drive unit, switch element, low frequency decoupling capacitor, intermediate frequency decoupling capacitor, high frequency decoupling capacitor and switch and exports decoupling capacitor, wherein,
The input of the input connection control signal of described switch drive unit, the output of described switch drive unit is connected with the control end of at least two described switch elements;
The input of described switch element is connected with the input of power supply, and the output of described switch element has and is only connected with the control end of a radio frequency amplifier;
Low frequency decoupling capacitor, intermediate frequency decoupling capacitor, high frequency decoupling capacitor is parallel with between the input of described switch element and ground;
Be connected with described switch between the output of described switch element and ground and export decoupling capacitor.
Its workflow is as follows: switch drive unit receives the control signal of input, described control signal being converted to by switch drive unit can the control signal of driving switch unit, make switch element can by output controlled for supply voltage after high frequency decoupling capacitor, intermediate frequency decoupling capacitor, low frequency decoupling capacitor filtering process, and export after decoupling capacitor filtering through switch, output to and switch element number radio frequency amplifier one to one.Thus for being connected with the radio-frequency receiving-transmitting equipment of multiple radio frequency amplifier, distant (for avoiding the signal between radio frequency amplifier mutually to disturb and arranging) even if between radio frequency amplifier, switch element by being mated by each radio frequency amplifier is arranged nearby, the quantity of filter capacitor between switch element output with radio frequency amplifier and the capacity of electric capacity can be reduced greatly, thus reduce the discharge and recharge effect of electric capacity to the control signal that the switch element exported exports, improve the response speed of power supply.
In addition, for electric power management circuit of the present invention, because each radio frequency amplifier is controlled by the switch element separated, the mode that multiple radio frequency amplifier controls is compared by same switch element relative in prior art, the total electricity of each switch element can be reduced, thus reduce the device temperature of switch element, improve its useful life.Such as, when use switching tube is powered to N number of radio frequency amplifier, the operating current of each radio frequency amplifier is a, the electric current so flowed through at switching tube place is N*a, temperature Centralized and the non-easy heat radiation of switching tube can be caused thus, the switching tube be in for a long time under the condition of high temperature easily damages, and affects the useful life of switching tube.
Below the parts of described electric power management circuit are specifically described:
The input of described control signal, for connection control signal source.Described control signal, can including, but not limited to periodic pulse signal, and according to the low and high level inputted to described switch drive unit in described pulse signal, described switch drive unit is exported can the pulse signal of opening and closing of control switch unit.
Described switch drive unit, can including, but not limited to buffer, inverter, and wherein, described buffer does not perform any computing to input value, the state of the low and high level of its output valve and the same with the state of the low and high level of input value.
When described switch drive unit is buffer, can be convention buffer, also can be tristate buffer.The buffer circuit that described buffer can be made up of multiple switching tube also can be integrated buffer chip, as the Three-State chip of 74 now conventional series, comprises as 74AHCT244,74LS06 etc.
Wherein, the state value of input is always directly exported by output by described convention buffer, and namely during input low level, exporting also is low level; When being input as high level, exporting also is high level.And by the output voltage values of adjustment buffer, in order to adapt to the switch element driving next stage to be connected.
Described tristate buffer, except the state value output function of convention buffer, also has an option input, represents with E.As E=0 and E=1, there is different output valves.As E=1, tristate buffer gating, the state value of its input directly delivers to output; If E=0, tristate buffer is cut off, no matter the state value of input why sample, its always high-impedance state exported.By described option input, may be used for realizing the opening and closing to control signal.
When described switch drive unit is inverter, its inverter that can form for gate circuit also can be the inverter of integrated chip.The inverter that described gate circuit is formed, comprises inverter that TTL NAND gate forms and CMOS inverter etc.The advantage of the inverter that described TTL NAND gate is formed is that operating rate is fast, carrying load ability is strong, transmission characteristic is good.The advantage of described CMOS inverter is to have that quiescent dissipation is low, antijamming capability is comparatively strong, power utilization rate is high and input impedance is high, the feature that carrying load ability is strong.
Wherein, as shown in Figure 2, it comprises the inverter that a kind of common TTL NAND gate is formed:
Input stage---transistor T1 and resistance Rb1 is formed.
Intergrade---transistor T2 and resistance Rc2, Re2 are formed.
The push-pull structure that output stage---transistor T3, T4, D and resistance Rc4 are formed, when normally working, T4 and T3 is when always one of them is in cut-off state, and another is in saturation condition.
As shown in Figure 3, it comprises driving tube V1 and load pipe V2 to a kind of common CMOS inverter structure, and wherein driving tube U1 is NMOS tube, and load pipe U2 is PMOS.The grid source cut-in voltage V1 of NMOS tube be on the occasion of, the grid source cut-in voltage V2 of PMOS is negative value, and its number range is between 2 ~ 5V.In order to make circuit normally work, require supply voltage V> (V1+|V2|).V can work between 3 ~ 18V, and its scope of application is wider.
Described switch element can be switching tube, comprises as triode, metal-oxide-semiconductor, controllable silicon and other gate-controlled switch device.Wherein, because the switching speed being operated in the radio frequency amplifier under time division duplex is very fast, therefore multiselect metal-oxide-semiconductor controls the operating state of described radio frequency amplifier as switching tube.
Described low frequency decoupling capacitor, intermediate frequency decoupling capacitor and high frequency decoupling capacitor form decoupling circuit network together, are respectively used to the effect of high frequency, intermediate frequency, low frequency decoupling.
Described switch exports decoupling capacitor and is connected between the output of switch element and ground, because the spacing of switch element and radio frequency amplifier is very short, very little decoupling capacitor can be selected, as low frequency decoupling capacitor can meet the demands, reduce the charging and discharging effects of electric capacity, thus also improve the response speed of power supply.In addition, described switch exports the capacity of decoupling capacitor, also according to the operating frequency of radio frequency amplifier, can select the filter capacitor different from described operating frequency, avoid filtered control signal.
As more specifically a kind of execution mode of the embodiment of the present invention, be illustrated in figure 4 the electric power management circuit that the embodiment of the present invention controls for the transmitting-receiving of radio-frequency (RF) transceiver, wherein radio-frequency (RF) transceiver comprises two radio-frequency (RF) transmitter or two radio frequency receivers, described radio-frequency (RF) transmitter and radio frequency receiver can be the inner monolithic integrated microwave circuit MMIC power amplifier not having capacitance, accordingly, the control end of described radio frequency amplifier is the collector electrode of monolithic integrated microwave circuit MMIC power amplifier.For ease of describing, described radio frequency amplifier is called the first radio frequency amplifier and the second radio frequency amplifier.Described switch element is described for MOS switching tube.
As shown in Figure 2, described radio frequency amplifier comprises the first radio frequency amplifier and the second radio frequency amplifier, described metal-oxide-semiconductor comprises the first metal-oxide-semiconductor U3 and the second metal-oxide-semiconductor U4, described low frequency electric capacity of uncoupling comprises the first low frequency decoupling capacitor C101 and the second low frequency decoupling capacitor C201, described intermediate frequency decoupling capacitor comprises the first intermediate frequency decoupling capacitor C102 and the second intermediate frequency decoupling capacitor C202, described high frequency decoupling capacitor comprises the first high frequency decoupling capacitor C103 and the second high frequency decoupling capacitor C203, described switch exports decoupling capacitor and comprises the first switch output decoupling capacitor C104 and second switch output decoupling capacitor C204, wherein,
The output of described switch drive unit is connected with the grid G of the first metal-oxide-semiconductor U3, and the output of described switch drive unit is also connected with the grid G of the second metal-oxide-semiconductor U4;
The source S of described first metal-oxide-semiconductor U3 is connected with the input of power supply, and the drain D of described first metal-oxide-semiconductor U3 is connected with the control end of the first radio frequency amplifier;
Between the source S that described first low frequency decoupling capacitor C101, the first intermediate frequency decoupling capacitor C102, the first high frequency decoupling capacitor C103 are parallel to described first metal-oxide-semiconductor U3 and ground;
Between the drain D that described first switch output decoupling capacitor C104 is connected to described first metal-oxide-semiconductor U3 and ground;
The source S of described second metal-oxide-semiconductor U4 is connected with the input of power supply, and the drain D of described second metal-oxide-semiconductor U4 is connected with the control end of the second radio frequency amplifier;
Between the source S that described second low frequency decoupling capacitor C201, the second intermediate frequency decoupling capacitor C202, the second high frequency decoupling capacitor C203 are parallel to described second metal-oxide-semiconductor U4 and ground;
Between the drain D that described second switch output decoupling capacitor C204 is connected to described second metal-oxide-semiconductor U4 and ground.
Its workflow is described below:
The control signal of input, exports the output voltage that can control metal-oxide-semiconductor opening and closing via the buffer in described switch drive unit.The source S of described metal-oxide-semiconductor connects power supply, and described drain D connects the power pin (being generally the collector electrode of radio frequency amplifier) of radio frequency amplifier, and grid G connects the output of described switch drive unit.When switch drive unit is inverter and the first metal-oxide-semiconductor U3, the second metal-oxide-semiconductor U4 are P raceway groove, when control signal is low level, inverter exports high level, first metal-oxide-semiconductor and between the second metal-oxide-semiconductor grid G and source S no-voltage poor, first metal-oxide-semiconductor U3 and the second metal-oxide-semiconductor U4 channel cutoff, the power-off of described radio frequency amplifier, the first radio frequency amplifier and the second radio frequency amplifier are in the state of quitting work.When control signal is high level, inverter output low level, first metal-oxide-semiconductor U3 and have voltage difference VDD between the second metal-oxide-semiconductor U4 grid G and source S, the first metal-oxide-semiconductor U3 and the second metal-oxide-semiconductor U4 raceway groove conducting, described first radio frequency amplifier and the second radio frequency amplifier in running order.
And, the object of power supply response speed is improved for improving scheme described in the application further, described first metal-oxide-semiconductor U3 and the second metal-oxide-semiconductor U4 is close to corresponding radio frequency amplifier, described low frequency, intermediate frequency, high frequency decoupling capacitor are as far as possible near the input of switch element metal-oxide-semiconductor (the first metal-oxide-semiconductor and the second metal-oxide-semiconductor), thus reduce the capacitance that switch exports decoupling capacitor C104 and C105 further, improve the response speed of power supply further.
The power management circuit of the radio frequency amplifier described in Fig. 4 is the case study on implementation managed two radio frequency amplifiers.Should be appreciated that the embodiment of the present invention can be applicable to the power management situation of two or more radio frequency amplifier, obtain the effect of power supply fast response time.And electric power management circuit of the present invention can also by the layout of pcb board, the heat that solution prior art breaker in middle pipe centrally connected power supply produces is concentrated, and not easy heat radiation, causes device to hold flimsy defect.By the distributed setting to each switching tube, can dispel the heat by multiple spot, the heat of each switch element can not be too high, is conducive to the heat dissipation design of pcb board.
In addition, the electric power management circuit of the amplifier described in the embodiment of the present invention, can be used for the radio-frequency (RF) transceiver of the radio frequency amplifier comprising varying number, as arranged multiple radio frequency amplifier for radio frequency transmission or/and the radio frequency amplifier of multiple radio frequency reception in same radio-frequency (RF) transceiver, by the electric power management circuit of the radio frequency amplifier described in application the above embodiment of the present invention, while realizing lower power consumption, also can improve the response speed of power supply.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an electric power management circuit for radio frequency amplifier, is characterized in that, described circuit comprises switch drive unit, switch element, low frequency decoupling capacitor, intermediate frequency decoupling capacitor, high frequency decoupling capacitor and switch and exports decoupling capacitor, wherein,
The input of the input connection control signal of described switch drive unit, the output of described switch drive unit is connected with the control end of at least two described switch elements;
The input of described switch element is connected with the input of power supply, and the output of described switch element has and is only connected with the control end of a radio frequency amplifier;
Low frequency decoupling capacitor, intermediate frequency decoupling capacitor, high frequency decoupling capacitor is parallel with between the input of described switch element and ground;
Be connected with described switch between the output of described switch element and ground and export decoupling capacitor.
2. the electric power management circuit of radio frequency amplifier according to claim 1, it is characterized in that, described radio frequency amplifier comprises the first radio frequency amplifier and the second radio frequency amplifier, described switch element comprises the first switch element and second switch unit, described low frequency electric capacity of uncoupling comprises the first low frequency decoupling capacitor C101 and the second low frequency decoupling capacitor C201, described intermediate frequency decoupling capacitor comprises the first intermediate frequency decoupling capacitor C102 and the second intermediate frequency decoupling capacitor C202, described high frequency decoupling capacitor comprises the first high frequency decoupling capacitor C103 and the second high frequency decoupling capacitor C203, described switch exports decoupling capacitor and comprises the first switch output decoupling capacitor C104 and second switch output decoupling capacitor C204, wherein,
The output of described switch drive unit is connected with the control end of the first switch element, and the output of described switch drive unit is also connected with the control end of second switch unit;
The described input of the first switch element is connected with the input of power supply, and the output of described first switch element is connected with the control end of the first radio frequency amplifier;
Between the input that described first low frequency decoupling capacitor C101, the first intermediate frequency decoupling capacitor C102, the first high frequency decoupling capacitor C103 are parallel to described first switch element and ground;
Between the output that described first switch output decoupling capacitor C104 is connected to described first switch element and ground;
The described input of second switch unit is connected with the input of power supply, and the output of described second switch unit is connected with the control end of the second radio frequency amplifier;
Between the input that described second low frequency decoupling capacitor C201, the second intermediate frequency decoupling capacitor C202, the second high frequency decoupling capacitor C203 are parallel to described second switch unit and ground;
Between the output that described second switch output decoupling capacitor C204 is connected to described second switch unit and ground.
3. the electric power management circuit of radio frequency amplifier according to claim 1, it is characterized in that, described switch drive unit is inverter or buffer.
4. the electric power management circuit of radio frequency amplifier according to claim 1, it is characterized in that, described switch element is switching tube.
5. the electric power management circuit of radio frequency amplifier according to claim 1, it is characterized in that, described switching tube is metal-oxide-semiconductor, and the source electrode of described metal-oxide-semiconductor is the input of switch element, the drain electrode of described metal-oxide-semiconductor is the output of switch element, and the grid of described metal-oxide-semiconductor is the control end of switch element.
6. the electric power management circuit of radio frequency amplifier according to claim 1, is characterized in that, it is low frequency decoupling capacitor that described switch exports decoupling capacitor.
7. the electric power management circuit of radio frequency amplifier according to claim 6, is characterized in that, described low frequency decoupling capacitor is determined according to the operating frequency of described radio frequency amplifier.
8. the electric power management circuit of radio frequency amplifier according to claim 1, is characterized in that, the control end of described radio frequency amplifier is the collector electrode of monolithic integrated microwave circuit MMIC power amplifier.
9. the electric power management circuit of radio frequency amplifier according to claim 1, is characterized in that, described switch element is close to described radio frequency amplifier on circuit boards.
10. a radio-frequency (RF) transceiver, is characterized in that, described radio-frequency (RF) transceiver comprises the electric power management circuit of the radio frequency amplifier described in any one of claim 1-9.
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| CN109391235A (en) * | 2017-08-11 | 2019-02-26 | 联发科技股份有限公司 | The method of circuit module and operation power amplifier circuit module |
| CN110890897A (en) * | 2019-11-19 | 2020-03-17 | 维沃移动通信有限公司 | Power supply circuit, power supply method and electronic equipment |
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| 钟顺洪: "开关功率放大器的一种新型控制方法", 《中国优秀博硕士学位论文全文数据库（硕士）信息科技辑》 * |
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| CN107395221A (en) * | 2017-08-09 | 2017-11-24 | 惠州Tcl移动通信有限公司 | A kind of LTE frequency ranges switching device, switching method and mobile terminal |
| US11165449B2 (en) | 2017-08-09 | 2021-11-02 | JRD Communication (Shenzhen) Ltd. | LTE frequency band switching device and method, and mobile terminal |
| CN109391235A (en) * | 2017-08-11 | 2019-02-26 | 联发科技股份有限公司 | The method of circuit module and operation power amplifier circuit module |
| CN110890897A (en) * | 2019-11-19 | 2020-03-17 | 维沃移动通信有限公司 | Power supply circuit, power supply method and electronic equipment |
| CN110890897B (en) * | 2019-11-19 | 2022-01-28 | 维沃移动通信有限公司 | Power supply circuit, power supply method and electronic equipment |
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