CN104377543B - A kind of semiconductor laser cavity mirror preparation method - Google Patents
A kind of semiconductor laser cavity mirror preparation method Download PDFInfo
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Abstract
The invention belongs to semiconductor surface technical field of modification, and in particular to a kind of semiconductor laser cavity mirror preparation method, comprise the following steps：Step one, clean；Step 2, it is passivating modified；Step 3, deielectric-coating plated film；Step 4, upset, repeat step one arrives step 3, and step 5 is removed；The semiconductor laser cavity mirror method of modifying, can compatible chemistry and physical surface modification technology, improve the selectivity and integrality of surface treatment；Make surface cleaning, passivating modified and two-sided hysteroscope deielectric-coating plated film is once completed in same vacuum chamber, reduce sample turnover number of operations and the pollution and damage that may bring, improve cost rate, and greatly improve production efficiency；This method is integrated with surface cleaning, modified passivation and medium membrane technology in same Equipment Foundations, each step of surface treatment is established seamless connection, improves end properties and yield rate；Further, also a step is completed for the processing of Double End deielectric-coating hysteroscope, more enhances production efficiency and quality stability；This method is adapted to batch processing, and production efficiency is high, and integrated cost is low.
Description
Technical field
The invention belongs to material surface modifying and coating technique field, and in particular to prepared by a kind of semiconductor laser cavity mirror
Method.
Background technology
Semiconductor laser chip has three chief components from structure：Semiconductor gain media, laser resonance cavity,
And driving electrodes.From the point of view of current laser chip current art, there are certain ripe design and manufacture in these three parts
Technology.Such as semiconductor energy gap design and growth technology, the end face processing technology of resonant cavity, and Ohmic electrode contact life
Long technology.The performance of these promoting technology semiconductor laser chips is towards broader wave band, more high brightness and power, higher effect
Rate, higher reliability and the development of more long-life.
Current high power laser has reached 100 megawatts of magnitudes every square centimeter, highest optical quantum in energy density
Sub- conversion efficiency is also above 70%.But with the extension in laser application field, it is desirable to further promote laser chip performance hair
Exhibition, particularly improves the reliability under high power density operation and long-life.These requirements require further improvement prior art,
Even invent new technology.We are directed to the key technology of laser cavity in laser chip, the processing of laser resonance Cavity surface and Jie
The growth of plasma membrane, it is proposed that new preparation method.
Current side-emitting laser resonator is made up of front facet and rear facet；They are by preceding, and rear cleavage surface is simultaneously plated respectively
Formed with antireflection or high reflection medium film preparation.In laser resonance intracavitary, optical power density front facet up to maximum and by
In some interface oxidations or absorption reason, from way back technical staff just notice the rising with laser power, go out earliest
The place of existing material light injury is just on the superficial layer of laser front facet, here it is COMD（Catastrophic of
Mirror Damage）.It is that semiconductor cleavage surface superficial layer is exposed in air in preparation engineering through analysis, the reason for COMD
And aoxidize, water absorption or contamination, this very thin imperfections superficial layer can absorb light energy and generate heat, and cause COMD.Have a variety of
Technology is invented and by practice in improving COMD magnitudes, mainly there is three major types technology：
1st, diffusion technique is used to increase the material surface bandwidth close to cleavage surface so that light absorbs decline；
2nd, vacuum dissociation and process for treating surface are to avoid the generation of surface oxidation and Surface absorption center；
3rd, physically or chemically cleaning technique is to remove surface oxidation adsorption layer, so as to reduce suction of the superficial layer to light energy
Receive.
This three types of technology is used in different companies, all obtains good effect.Superficial layer diffusion technique is based on warp
The semiconductor diffusion theory and technology of allusion quotation, element-specific source are mixed the material layer leaned on into cleavage surface, to reduce to some wavelength
Absorption, this technology is obtained for good effect in COMD reduction and life.But with semiconductor material system
Different diffusion elements are looked for the difference of optical maser wavelength.Applicability is restricted, and the diffusion for controlling different elements is also one
The technique of arduous high cost.Therefore the company used is not too much more.
The central concept of vacuum dissociation process for treating surface is to avoid laser chip in process treatment process exposed to big
In gas, all processing are completed all under high vacuum environment.The sample completed in laboratory environments actually reaches very high
COMD threshold values, it was confirmed that the feasibility of this thinking.But really also encounter very big difficulty, such as volume production in specific technical operation
Bad adaptability, this is also the reason for this technology cannot be introduced into actual production always.In implementing for this technology, first have to set
A set of complicated vacuum technology equipment is counted, to include high vacuum sample storage chamber, high vacuum cleavage chamber and mechanical manipulator, it is high
Vacuum Deposition membrane cavity is used to plate the transmission mechanical system of passivation protection film and sample between cavity.This set system can be prepared really
Go out the higher laser chip of power, but maximum defect for production is that production efficiency is extremely low, it is impossible to produce in enormous quantities.Its
His shortcoming includes equipment operation difficulty, and uniformity is poor, and cost of equipment maintenance is high, and the selection for being passivated membrane material is limited, it is impossible to simultaneous
Hold the laser chip of different materials system.In addition, theoretically also can not thoroughly avoid the life of Surface absorption layer even if high vacuum
Into simply slowing down this process.
The conventional laser cavity surface treatment technology of 3rd class is with method removing chamber physically or chemically before cavity surface film coating
Face, such as ion beam are bombarded surface, it is desirable to remove surface suspension in micro-scale strike and adsorb, laser cavity is then plated again
Mirror, ion beam bombardment and plated film can the single treatments in same vacuum cavity.This technology is in actual effect and bad, main
It is that superficial layer combination can be very high to want reason, and the method for physical bombardment is very difficult to remove, and surface is caused in addition, ion beam energy is excessive
Injury, is unfavorable for improving COMD on the contrary.
The content of the invention
In view of the above-mentioned problems, reducing surface defect the invention provides one kind, the semiconductor laser of optical property is improved
Hysteroscope preparation method.
To achieve the above object, the present invention uses following technical scheme：
A kind of semiconductor laser cavity mirror preparation method, it is characterised in that complete in integrated end face processing, i.e. disposal vacuum
Into the deielectric-coating plated film and the early stage additional step of needs of Double End hysteroscope, including surface cleaning and modified Passivation Treatment, its
Comprise the following steps that：
Step one, surface cleaning；
Step 2, surface is modified passivation；
Step 3, deielectric-coating plated film；
Step 4, sample upset, repeat step one arrives step 3, removes.
Surface cleaning in the step one is through the following steps that carry out：
（2.1）The sample of semiconductor laser cavity mirror is put into vacuum cavity and is fixed on specimen holder；
（2.2）The direction of an end face in two end faces of sample is adjusted to identical with plasma cleans processing direction
Direction；
（2.3）Vacuumize process is carried out to cavity, the air pressure for vacuumizing rear chamber reaches 10-5Torr~10-6torr；
（2.4）The temperature adjustment of sample to 350 DEG C~450 DEG C, and to inert gas is passed through in vacuum chamber, adjust vacuum
Air pressure in chamber, makes air pressure be maintained in the range of 1-10torr, the plasma in activation vacuum chamber, treats stabilized plasma state,
And the adsorbate of sample surfaces is cleared up；
（2.5）Sample temperature is controlled to reach 600 using electrical heating or infrared lamp and thermocouple feedbackoC, and be passed through lazy
Property gas, regulation air pressure is in the range of 1-10torr, activating plasma, stabilized plasma state, control bias 30-50volt,
Oxide on surface is removed by fluoride to sample surfaces；
（2.6）After processing terminates, the gas after being handled in vacuum chamber is pumped, and maintain the air pressure in vacuum chamber to be less than or equal to
10-6torr。
Surface in the step 2 is modified passivation and completed according to following steps：
（3.1）On the basis of step one, the sample after surface cleaning is heated, when sample temperature reaches
400 DEG C~500 DEG C, stop heating, and keep the temperature of sample；
（3.2）The air pressure in vacuum chamber is adjusted to 10-6Torr, is passed through passivation reaction gas or ammonia or nitride to sample
Surface carries out saturation Passivation Treatment, and is made annealing treatment；
（3.3）After annealing, the air pressure in adjustment vacuum chamber is less than or equal to 10-6Torr, and it is dry to be passed through in vacuum chamber
Net argon gas or nitrogen remove reacting gas.
The step 3, deielectric-coating plated film, is comprised the following specific steps that：
（4.1）On the basis of step 2, if into sample coating, the surface of sample is modified after purification, adjusts vacuum chamber
In vacuum to 1-3Torr, the sample after surface is modified passivation is heated, the temperature of sample is reached 300-
500℃；
（4.2）Plasma is activated, after after plasma stability, sample surfaces that are cleaned and being passivated are sputtered
Or electron beam medium plated film；
（4.3）The stable gas pressure in vacuum chamber is controlled in 1-10Torr, by adjusting plated film speed 1-5A/s and sample
Bias atomic layer arrangements and compactness of the 100v to film and carry out process optimization processing；
（4.4）The step of repeating above-mentioned I, II, III, until completing medium membrane system plated film；
（4.5）After the completion of plated film, sample is heat-treated, heat treatment temperature is 500oC, after heat treatment, adjusts vacuum
Air pressure in chamber is to 10-6Torr。
The step 4, overturns, and removes, comprises the following specific steps that：
（5.1）Sample after plated film is overturn, the other end that making sample does not have plated film is adjusted to plasma treatment
Direction；
（5.2）The end face that repeat step one, two, three pairs of samples do not have plated film carries out plated film；
（5.3）After after the complete plated film of sample, the sample after plated film removes vacuum chamber, completes all plated films.
The adsorbate cleaning of described sample surfaces is to remove surface adsorbate by fluoride or with argon plasma.
Described passivation reaction gas is sulfide or germanium silicon compound.
The present invention uses above-mentioned technical proposal, with advantages below：This semiconductor laser cavity mirror that the present invention is provided
Preparation method, can compatible chemistry and physical surface treatment technology, improve the selectivity and integrality of surface treatment；To equipment
Design will compatible corrosion and the processing of non-corrosive gas；The hysteroscope to laser cavity two ends is handled together simultaneously, and this is at present half
Also beyond example, the system employs distinctive real-time monitoring system in conductor Laser field, can be with integrated real-time measurement system pair
Membrane system etc. carries out dynamic operation, rather than conventional semiconductor equipment temporally carrys out control operation flow.This method is employed under
Upward plated film set-up mode, sample is upper, and Coating Materials is under.Reduce the contamination of impurity particle.Deposition in cavity
Grain is not fallen out on sample.Surface cleaning, passivation and two-sided hysteroscope plated film are once completed in same vacuum chamber, reduce sample
The error that product turnover number of operations may be brought is damaged, and improves cost rate, and greatly improve production efficiency；This method is same
Surface cleaning, modified passivation and medium coating technique are integrated with one Equipment Foundations, makes cleaning, is established between passivation and plated film
Seamless connection, improves end properties and yield rate；Two-sided hysteroscope single treatment is completed, and more enhances production efficiency and quality
Stability；This method difference and vacuum surface processing technology, are adapted to batch processing, and production efficiency is high, and cost is low；This method is used
Surface Physical Chemistry lithographic technique, the limitation that diffusion technique element can be avoided to select；Employ surface physics simultaneously
Lithographic technique is learned, can more effective saturated surface state, the stability of raising device and life-span；Employ physical chemistry surface simultaneously
Lithographic technique, can further moulding, reduction surface defect, raising optical property to surface.
The present invention is described in further details below with reference to accompanying drawing.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the present invention.
Embodiment
Reach technological means and effect that predetermined purpose is taken for the present invention is expanded on further, below in conjunction with accompanying drawing and reality
Embodiment, architectural feature and its effect of example to the present invention are applied, is described in detail as follows.
A kind of semiconductor laser cavity mirror preparation method, comprises the following steps：
Step one, surface cleaning；
Step 2, surface is modified passivation；
Step 3, medium plated film；
Step 4, upset, repeat step one arrives step 3, removes.
Embodiment 1
The surface cleaning in the step one as described in Figure 1 is comprised the following steps that：
Surface cleaning：
（2.1）The sample of semiconductor laser cavity mirror is put into vacuum cavity and is fixed on specimen holder；
（2.2）The direction of an end face in two end faces of sample is adjusted to identical with plasma cleans processing direction
Direction；
（2.3）Vacuumize process is carried out to cavity, the air pressure for vacuumizing rear chamber reaches 10-5Pa or 10-6Pa；
（2.4）The temperature adjustment of sample to 350 DEG C or 400 DEG C or 450 DEG C, and to being passed through inert gas in vacuum chamber,
The air pressure in vacuum chamber is adjusted, air pressure is maintained in the range of 1-10torr, the plasma in activation vacuum chamber treats stable etc.
Ionic state, is cleared up the adsorbate of sample surfaces by fluoride or with argon plasma；
（2.5）Sample temperature is controlled to reach 600 using electrical heating or infrared lamp and thermocouple feedbackoC, and be passed through lazy
Property gas, regulation air pressure is in the range of 1-10torr, activating plasma, stabilized plasma state, control bias 30-50volt,
Surface oxide is removed by fluoride to sample surfaces；
（2.6）After processing terminates, the gas after being handled in vacuum chamber is pumped, and maintain the air pressure in vacuum chamber to be less than or equal to
10-6torr。
Surface is modified passivation：
（3.1）Sample after surface cleaning is heated, when sample temperature reaches 400 DEG C or 500 DEG C, stops adding
Heat, and keep the temperature of sample；Continue under vacuum conditions to sample surfaces processing；
（3.2）The air pressure in vacuum chamber is adjusted to 10-6Torr, is passed through the passivation reaction gases such as sulfide, germanium silicon compound
Or nitride, ammonia, saturated process is carried out to sample, and made annealing treatment；
（3.3）After annealing, the air pressure in adjustment vacuum chamber is less than or equal to 10-6Torr, and it is dry to be passed through in vacuum chamber
Net argon gas or nitrogen remove reacting gas.
Deielectric-coating plated film：
（4.1）The surface of sample sets machine and set into plated film after purification by modified, the vacuum in adjustment vacuum chamber
Degree heats the sample after surface is modified passivation, the temperature of sample is reached 300 DEG C -500 DEG C to 1-3Torr；
（4.2）Plasma is activated, wait after plasma stability of living, opening target window is to sample that is cleaned and being passivated
Product surface is sputtered or electron beam medium plated film；
（4.3）The stable gas pressure in vacuum chamber is controlled in 1-10Torr, while adjusting plated film speed 1-5A/s and sample
Bias atomic layer arrangements and compactness of the 100v to film and carry out process optimization processing；
（4.4）The step of repeating above-mentioned I, II, III, until completing plated film；
（4.5）After the completion of plated film, sample is heat-treated, heat treatment temperature is 500oC, after heat treatment, adjusts vacuum
Air pressure in chamber is to 10-6Torr。
Upset, repeats surface cleaning, surface and is modified passivation, deielectric-coating plated film, step, remove：
（5.1）Sample after plated film is overturn, the other end that making sample does not have plated film is adjusted to plasma treatment
Direction；
（5.2）The end face that repeat step one, two, three pairs of samples do not have plated film carries out plated film；
（5.3）After after the complete plated film of sample, the sample after plated film removes vacuum chamber, completes all plated films.
As can be seen that surface cleaning in the present embodiment, passivation and two-sided hysteroscope plated film are once completed in same vacuum chamber,
The error that reducing sample turnover number of operations may bring is damaged, and improves cost rate, and greatly improve production efficiency；This
Method is integrated with surface cleaning in same Equipment Foundations, modified passivation and medium coating technique, makes cleaning, passivation and plated film it
Between establish seamless connection, improve end properties and yield rate；Two-sided hysteroscope single treatment is completed, and more enhances production effect
Rate and quality stability；This method difference and vacuum surface processing technology, are adapted to batch processing, and production efficiency is high, and cost is low；This
Method employs Surface Physical Chemistry lithographic technique, the limitation that diffusion technique element can be avoided to select；Employ table simultaneously
Face physical chemistry lithographic technique, can more effective saturated surface state, improve stability and the life-span of device；Employ physics simultaneously
Chemical surface lithographic technique, can further moulding, reduction surface defect, raising optical property to surface.
Embodiment 2
Surface cleaning：
（2.1）The sample of semiconductor laser cavity mirror is put into vacuum cavity and is fixed on specimen holder；
（2.2）The direction of an end face in two end faces of sample is adjusted to identical with plasma cleans processing direction
Direction；
（2.3）Vacuumize process is carried out to cavity, the air pressure for vacuumizing rear chamber reaches 10-6Pa；Air pressure after vacuumizing
It is more suitable for cleaning the surface of sample；
（2.4）The temperature adjustment of sample to 400 DEG C, and to being passed through in vacuum chamber in inert gas, regulation vacuum chamber
Air pressure, the plasma for making air pressure be maintained in 10torr, activation vacuum chamber, treats stabilized plasma state, and to sample surfaces
Adsorbate is cleared up；Temperature is too high or air pressure is too high, can be that inert gas loses its function, temperature or air pressure are too low, wait from
Daughter cannot be activated；
（2.5）Sample temperature is controlled to reach 600 using electrical heating or infrared lamp and thermocouple feedbackoC, and be passed through lazy
Property gas, regulation air pressure is in the range of 10torr, activating plasma, stabilized plasma state, control bias 40volt, to sample
Product surface removes oxide on surface by fluoride；
（2.6）After processing terminates, the gas after being handled in vacuum chamber is pumped, and maintain the air pressure in vacuum chamber to be 10- 6torr。
Surface is modified passivation：
（3.1）Sample after surface cleaning is heated, when sample temperature reaches 450 DEG C, stops heating, and protect
Hold the temperature of sample；Continue under vacuum conditions to sample surfaces processing；
（3.2）The air pressure in vacuum chamber is adjusted to 10-6Torr, is passed through the passivation reaction gases such as sulfide, germanium silicon compound
Or nitride, ammonia, saturated process is carried out to sample, and made annealing treatment；
（3.3）After annealing, the air pressure in adjustment vacuum chamber is less than or equal to 10-6Torr, and it is dry to be passed through in vacuum chamber
Net argon gas or nitrogen remove reacting gas.
Deielectric-coating plated film：
（4.1）The surface of sample sets machine and set into plated film after purification by modified, the vacuum in adjustment vacuum chamber
Degree heats the sample after surface is modified passivation, the temperature of sample is reached 400 DEG C to 2Torr；It is too high or too low
Temperature and vacuum be not suitable for coating process in, the adhesion of film.
（4.2）Plasma is activated, wait after plasma stability of living, opening target window is to sample that is cleaned and being passivated
Product surface is sputtered or electron beam medium plated film；
（4.3）The stable gas pressure in vacuum chamber is controlled in 5Torr, while adjusting the bias of plated film speed 1-5A/s and sample
Atomic layer arrangements and compactness of the about 100v to film carry out process optimization processing；
（4.4）The step of repeating above-mentioned I, II, III, until completing plated film；
（4.5）After the completion of plated film, sample is heat-treated, heat treatment temperature is 500oC, after heat treatment, adjusts vacuum
Air pressure in chamber is to 10-6Torr。
Upset, repeats surface cleaning, surface and is modified passivation, deielectric-coating plated film, step, remove：
（5.1）Sample after plated film is overturn, the other end that making sample does not have plated film is adjusted to plasma treatment
Direction；
（5.2）The end face that repeat step one, two, three pairs of samples do not have plated film carries out plated film；
（5.3）After after the complete plated film of sample, the sample after plated film removes vacuum chamber, completes all plated films.
Table one：The present invention and the conventional semiconductors laser mirror technical performance table of comparisons：
By upper table as can be seen that technology of the invention and traditional is in semiconductor surface cleaning, surface dangling bonds saturation, Jie
Plasma membrane compactness, deielectric-coating surface roughness, deielectric-coating, which glue, very big improvement in the performances such as viscosity, compatible chemistry and thing
Process for treating surface is managed, the selectivity and integrality of surface treatment is improved；Design to equipment compatible will be corroded and non-corrosive
The processing of gas；The hysteroscope at laser cavity two ends is handled together simultaneously, this in current semiconductor laser field also beyond example, this
System employs distinctive real-time monitoring system, can carry out dynamic operation to membrane system etc. with integrated real-time measurement system, rather than
Conventional semiconductor equipment temporally carrys out control operation flow.This method employs plated film set-up mode from bottom to top, and sample exists
On, Coating Materials is under.Reduce the contamination of impurity particle.Deposited particles in cavity are not fallen out on sample.Surface is clear
Clean, passivation and two-sided hysteroscope plated film are once completed in same vacuum chamber, reduce what sample turnover number of operations may be brought
Error is damaged, and improves cost rate, and greatly improve production efficiency；It is clear that this method is integrated with surface in same Equipment Foundations
Clean, modified passivation and medium coating technique make cleaning, establish seamless connection between passivation and plated film, improve the property of finished product
Energy and yield rate；Two-sided hysteroscope single treatment is completed, and more enhances production efficiency and quality stability；This method difference and vacuum
Process for treating surface, is adapted to batch processing, and production efficiency is high, and cost is low；This method employs Surface Physical Chemistry lithographic technique,
The limitation that diffusion technique element can be avoided to select；Surface Physical Chemistry lithographic technique is employed simultaneously, can more effectively be satisfied
And surface state, improve stability and the life-span of device；Physical chemistry surface etch technology is employed simultaneously, one can be entered to surface
Moulding is walked, surface defect is reduced, optical property is improved.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (6)
1. a kind of semiconductor laser cavity mirror preparation method, it is characterised in that completed in integrated end face processing, i.e. disposal vacuum
The deielectric-coating plated film of Double End hysteroscope and the early stage additional step of needs, including surface cleaning and modified Passivation Treatment, it has
Body step is as follows：
Step one, surface cleaning；
Step 2, surface is modified passivation；
Step 3, deielectric-coating plated film；
Step 4, sample upset, repeat step one arrives step 3, removes；
Surface cleaning in the step one is through the following steps that carry out：
（1.1）The sample of semiconductor laser cavity mirror is put into vacuum cavity and is fixed on specimen holder；
（1.2）The direction of an end face in two end faces of sample is adjusted to handle direction identical side with plasma cleans
To；
（1.3）Vacuumize process is carried out to cavity, the air pressure for vacuumizing rear chamber reaches 10-5Torr~10-6Torr；
（1.4）The temperature adjustment of sample to 350 DEG C~450 DEG C, and to being passed through in vacuum chamber in inert gas, regulation vacuum chamber
Air pressure, air pressure is maintained in the range of 1~10Torr, the plasma in activation vacuum chamber treats stabilized plasma state, and right
The adsorbate of sample surfaces is cleared up；
（1.5）Control sample temperature to reach 600 DEG C using electrical heating or infrared lamp and thermocouple feedback, and be passed through indifferent gas
In the range of body, regulation air pressure to 1~10Torr, plasma, stabilized plasma state, control bias 30-50volt, to sample are activated
Product surface removes oxide on surface by fluoride；
（1.6）After processing terminates, the gas after being handled in vacuum chamber is pumped, and maintain the air pressure in vacuum chamber to be less than or equal to 10- 6Torr。
2. semiconductor laser cavity mirror preparation method as claimed in claim 1, it is characterised in that：Surface in the step 2
Modified passivation is completed according to following steps：
（2.1）On the basis of step one, the sample after surface cleaning is heated, when sample temperature reaches 400 DEG C
~500 DEG C, stop heating, and keep the temperature of sample；
（2.2）The air pressure in vacuum chamber is adjusted to 10-6Torr, is passed through passivation reaction gas and sample surfaces is carried out at saturation passivation
Reason, and made annealing treatment；
（2.3）After annealing, the air pressure in adjustment vacuum chamber is less than or equal to 10-6Torr, and to be passed through clean argon in vacuum chamber
Gas or nitrogen remove reacting gas.
3. semiconductor laser cavity mirror preparation method as claimed in claim 1, it is characterised in that：The step 3, deielectric-coating
Plated film, is comprised the following specific steps that：
（3.1）On the basis of step 2, if into sample coating, the surface of sample is modified after passivation, in adjustment vacuum chamber
Vacuum heats the sample after surface is modified passivation, the temperature of sample is reached 300-500 to 1~3Torr
℃；
（3.2）Plasma is activated, after after plasma stability, sample surfaces that are cleaned and being passivated are sputtered or electricity
Beamlet medium plated film；
（3.3）The stable gas pressure in vacuum chamber is controlled in 1~10Torr, by adjusting the inclined of 1~5A/s of plated film speed and sample
Atomic layer arrangements and compactness of the 100volt to film is pressed to carry out process optimization processing；
（3.4）Repeat above-mentioned（3.1）、（3.2）、（3.3）The step of, until completing medium membrane system plated film；
（3.5）After the completion of plated film, sample is heat-treated, heat treatment temperature is 500 DEG C, after heat treatment, in adjustment vacuum chamber
Air pressure to 10-6Torr。
4. semiconductor laser cavity mirror preparation method as claimed in claim 1, it is characterised in that：The step 4, overturns, and moves
Go out, comprise the following specific steps that：
（4.1）Sample after plated film is overturn, makes sample not have the other end of plated film to be adjusted to plasma treatment direction；
（4.2）The end face that repeat step one, two, three pairs of samples do not have plated film carries out plated film；
（4.3）After after the complete plated film of sample, the sample after plated film removes vacuum chamber, completes all plated films.
5. semiconductor laser cavity mirror preparation method as claimed in claim 1, it is characterised in that：The suction of described sample surfaces
Addendum cleaning is to remove surface adsorbate by fluoride or with argon plasma.
6. semiconductor laser cavity mirror preparation method as claimed in claim 2, it is characterised in that：Described passivation reaction gas
For ammonia or nitride or sulfide or germanium silicon compound.
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| US9972968B2 (en) * | 2016-04-20 | 2018-05-15 | Trumpf Photonics, Inc. | Passivation of laser facets and systems for performing the same |
| CN109659810B (en) * | 2018-12-24 | 2021-10-08 | 香港中文大学（深圳） | Method for reducing threshold of microcavity semiconductor laser |
| CN109888599A (en) * | 2019-03-25 | 2019-06-14 | 北京科益虹源光电技术有限公司 | A kind of passivating method and passivating device suitable for laser discharge cavity |
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| US6744796B1 (en) * | 2000-03-30 | 2004-06-01 | Triquint Technology Holding Co. | Passivated optical device and method of forming the same |
| CN1670254A (en) * | 2005-04-30 | 2005-09-21 | 北京工业大学 | Method for deactivation of semiconductor laser cavity surface |
| CN102882120A (en) * | 2012-10-10 | 2013-01-16 | 长春理工大学 | Method for prolonging service life of semiconductor laser device |
| CN103022894A (en) * | 2012-11-22 | 2013-04-03 | 长春理工大学 | Semiconductor laser cavity surface passivation film structure and preparation method thereof |
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