CN104377127A - Capacitance adjusting method - Google Patents
Capacitance adjusting method Download PDFInfo
- Publication number
- CN104377127A CN104377127A CN201410508364.0A CN201410508364A CN104377127A CN 104377127 A CN104377127 A CN 104377127A CN 201410508364 A CN201410508364 A CN 201410508364A CN 104377127 A CN104377127 A CN 104377127A
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- China
- Prior art keywords
- end architecture
- capacitance
- electric capacity
- described front
- control method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Abstract
The invention discloses a capacitance adjusting method. The capacitance adjusting method comprises the steps of providing front-end structures, wherein the front-end structures are subjected to electronic irradiation treatment; detecting capacitance values of the front-end structures and screening out the front-end structures with the capacitance values lower than a target value; conducting heat treatment on the screened-out front-end structures. The capacitance values can be controlled to be in a required range through heat treatment and are small in fluctuation, and the capacitance consistency is improved. In addition, the capacitance adjusting method is low in cost and remarkable in effect.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of control method of electric capacity.
Background technology
Along with the fast development of semiconductor technology, the size of device is more and more less, and this just makes in metal-oxide-semiconductor, and the length of raceway groove (channel) shortens.In this metal-oxide-semiconductor, along with the continuous increase of source-drain voltage, the depletion layer in drain region can be made to expand to source region always, make channel length be zero, namely produce the break-through (punchthrough) between drain-source.
Meanwhile, because the extensive use of high-frequency element, Vehicles Collected from Market grows with each passing day to low capacitor element demand.In order to reach such object, many process meanses are introduced in semiconductor manufacturing to reduce electric capacity.
When not changing device architecture, namely keeping the length of raceway groove constant, avoiding, between source/drain region, punchthrough effect occurs, the object reducing electric capacity can be reached again simultaneously, take multiple means in the industry.Wherein, electron irradiation is utilized to be exactly a kind of effective method.But because electronics speed energy is very large, fluctuation is comparatively large, and electric capacity can be reduced to below control line sometimes, stability and consistency poor, thus cause yield loss.
Therefore, need to improve prior art, to reduce or to avoid the problem that occurs that electric capacity is too low
Summary of the invention
The object of the invention is to, a kind of control method of electric capacity is provided, improve the problem that electric capacity stability and consistency in prior art are poor.
For solving the problems of the technologies described above, the invention provides a kind of control method of electric capacity, comprising:
There is provided front-end architecture, described front-end architecture is through electron irradiation process;
Detect the capacitance of described front-end architecture, filter out the front-end architecture of capacitance lower than desired value;
The front-end architecture filtered out is heat-treated.
Optionally, for the control method of described electric capacity, described heat treatment is be in the atmosphere of 280 DEG C ~ 320 DEG C in temperature range, continuous heating 60 ~ 70 minutes.
Optionally, for the control method of described electric capacity, furnace process is adopted to carry out described heat treatment.
Optionally, for the control method of described electric capacity, baking oven baking is adopted to carry out described heat treatment.
Optionally, for the control method of described electric capacity, also comprise: the capacitance detecting front-end architecture after heat treatment, if the capacitance detecting described front-end architecture is lower than desired value, then continue to heat-treat described front-end architecture, and again detect the capacitance of described front-end architecture.
Optionally, for the control method of described electric capacity, if the capacitance detecting described front-end architecture differs with desired value be less than set point, then continue at identical conditions to heat-treat described front-end architecture.
Optionally, for the control method of described electric capacity, differ by more than equal set point if detect the capacitance of described front-end architecture and desired value, then the temperature continuing to heat-treat described front-end architecture is higher than the heat treated temperature of carrying out before.
Optionally, for the control method of described electric capacity, according to the specification of setting, if after the heat treatment of stipulated number, the capacitance of described front-end architecture is still defective, judges that described front-end architecture lost efficacy.
Compared with prior art, in the control method of electric capacity provided by the invention, provide front-end architecture, described front-end architecture is through electron irradiation process; Filter out the front-end architecture of capacitance lower than desired value, then heat treatment is at least one times carried out to the front-end architecture filtered out.Compared to existing technology, the present invention, by heat treatment, can make capacitance control in required scope, and fluctuation is less, improves the consistency of electric capacity.In addition, method of the present invention is with low cost, Be very effective.
Accompanying drawing explanation
Fig. 1 is the flow chart of the control method of electric capacity in the embodiment of the present invention.
Embodiment
Be described in more detail below in conjunction with the control method of schematic diagram to electric capacity of the present invention, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, for the front-end architecture after electron irradiation process, by heat treatment, electric capacity is remained in required scope.Thus reach with lower cost and make electric capacity ensure stability and conforming effect.
Below enumerate the preferred embodiment of the control method of described electric capacity, to clearly demonstrate content of the present invention, will be clear that, content of the present invention is not restricted to following examples, and other improvement by the routine techniques means of those of ordinary skill in the art are also within thought range of the present invention.
Based on above-mentioned thought, provide the preferred embodiment of the control method of electric capacity below, please refer to the flow chart of the control method of electric capacity in the embodiment of the present invention shown in Fig. 1, the control method of the electric capacity of the present embodiment comprises:
Step S101: provide front-end architecture, described front-end architecture is through electron irradiation process.Described front-end architecture comprises substrate, such as silicon substrate, silicon-on-insulator substrate etc., can be formed with buried regions in described substrate, and is formed in the necessary device layer on substrate.Carry out electron irradiation process to described front-end architecture, this process can adopt conventional means of the prior art, and the present invention does not repeat this.
Then, carry out step S102: the capacitance detecting described front-end architecture, filter out the front-end architecture of capacitance lower than desired value.Usually, through through electron irradiation, capacitance can be made to decline, although this decline is preferably, if but capacitance declines excessive, exceedes minimum standard (desired value), device also can be caused defective, therefore, need the detection carrying out capacitance, too low for capacitance is filtered out.
Then, step S103 is carried out: the front-end architecture filtered out is heat-treated.Preferably, described heat treatment is be in the atmosphere of 280 DEG C ~ 320 DEG C in temperature range, continuous heating 60 ~ 70 minutes.Described heat treatment can be adopt furnace process to carry out described heat treatment, also can be to adopt baking oven baking to carry out described heat treatment.
After Overheating Treatment, detect the capacitance of front-end architecture after heat treatment.Generally, capacitance can be made to have certain rise through Overheating Treatment, and keep preferably stability.Although but also there will be and have rise after a heat treatment, but still lower than the situation of desired value.In this case, continue to heat-treat described front-end architecture.Preferably, heat treated condition is optimized according to the gap between capacitance and desired value.Such as, if the capacitance detecting described front-end architecture differs with desired value be less than set point, then continue at identical conditions to heat-treat described front-end architecture.If detect the capacitance of described front-end architecture and desired value to differ by more than and equal set point, then the temperature continuing to heat-treat described front-end architecture is higher than the heat treated temperature of carrying out before.After heat treatment again, again detect the capacitance of described front-end architecture.
Preferably, this process circulation of again heat-treating may be prescribed as 1 to 2 times, if after this heat treatment several times, capacitance has met required standard, then just think qualified.If also there is the capacitance of front-end architecture lower than desired value, then can be judged to lose efficacy.The setting of this cycle-index considers rear decision based on each side such as product needed and production time, therefore, according to different needs, and the situation of change of capacitance after each heat treatment, the heat treatment of more times number can also be carried out.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. a control method for electric capacity, comprising:
There is provided front-end architecture, described front-end architecture is through electron irradiation process;
Detect the capacitance of described front-end architecture, filter out the front-end architecture of capacitance lower than desired value;
The front-end architecture filtered out is heat-treated.
2. the control method of electric capacity as claimed in claim 1, is characterized in that, described heat treatment is be in the atmosphere of 280 DEG C ~ 320 DEG C in temperature range, continuous heating 60 ~ 70 minutes.
3. the control method of electric capacity as claimed in claim 2, is characterized in that, adopts furnace process to carry out described heat treatment.
4. the control method of electric capacity as claimed in claim 2, is characterized in that, adopts baking oven baking to carry out described heat treatment.
5. the control method of the electric capacity as described in claim 3 or 4, it is characterized in that, also comprise: the capacitance detecting front-end architecture after heat treatment, if detect the capacitance of described front-end architecture lower than desired value, then continue to heat-treat described front-end architecture, and again detect the capacitance of described front-end architecture.
6. the control method of electric capacity as claimed in claim 5, is characterized in that, if the capacitance detecting described front-end architecture differs with desired value be less than set point, then continue at identical conditions to heat-treat described front-end architecture.
7. the control method of electric capacity as claimed in claim 5, it is characterized in that, if detect the capacitance of described front-end architecture and desired value to differ by more than and equal set point, then the temperature continuing to heat-treat described front-end architecture is higher than the heat treated temperature of carrying out before.
8. the control method of electric capacity as claimed in claim 5, is characterized in that, according to the specification of setting, if after the heat treatment of stipulated number, the capacitance of described front-end architecture is still defective, judges that described front-end architecture lost efficacy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508364.0A CN104377127B (en) | 2014-09-28 | 2014-09-28 | The adjusting method of electric capacity |
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| CN201410508364.0A CN104377127B (en) | 2014-09-28 | 2014-09-28 | The adjusting method of electric capacity |
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| CN104377127A true CN104377127A (en) | 2015-02-25 |
| CN104377127B CN104377127B (en) | 2018-03-06 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254828A (en) * | 2011-07-18 | 2011-11-23 | 无锡新洁能功率半导体有限公司 | Method for making semiconductor device with super junction structure and rapid reverse recovery characteristic |
| CN102723363A (en) * | 2011-03-29 | 2012-10-10 | 比亚迪股份有限公司 | VDMOS device and manufacturing method thereof |
| US8445377B2 (en) * | 2007-01-24 | 2013-05-21 | International Business Machines Corporation | Mechanically robust metal/low-k interconnects |
-
2014
- 2014-09-28 CN CN201410508364.0A patent/CN104377127B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8445377B2 (en) * | 2007-01-24 | 2013-05-21 | International Business Machines Corporation | Mechanically robust metal/low-k interconnects |
| CN102723363A (en) * | 2011-03-29 | 2012-10-10 | 比亚迪股份有限公司 | VDMOS device and manufacturing method thereof |
| CN102254828A (en) * | 2011-07-18 | 2011-11-23 | 无锡新洁能功率半导体有限公司 | Method for making semiconductor device with super junction structure and rapid reverse recovery characteristic |
Non-Patent Citations (2)
| Title |
|---|
| 刘超铭: "《双极晶体管辐射损伤效应及深能级缺陷研究》", 31 December 2013 * |
| 翟冬青等: "电子辐照对硅双极晶体管交流参数的影响", 《半导体学报》 * |
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| CN104377127B (en) | 2018-03-06 |
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Address after: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
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Effective date of registration: 20210422 Address after: 200120 No.600 Yunshui Road, Pudong New Area, Shanghai Patentee after: Shanghai Jita Semiconductor Co.,Ltd. Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: SHANGHAI ADVANCED SEMICONDUCTO |
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