CN104372403B - Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block - Google Patents
Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block Download PDFInfo
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- CN104372403B CN104372403B CN201410631857.3A CN201410631857A CN104372403B CN 104372403 B CN104372403 B CN 104372403B CN 201410631857 A CN201410631857 A CN 201410631857A CN 104372403 B CN104372403 B CN 104372403B
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Abstract
The invention discloses a heat insulation block for a polysilicon ingot casting furnace, which is arranged on the periphery of the bottom of a crucible of the polysilicon ingot casting furnace and used for heat insulation in the process of heating or cooling polysilicon with the crucible. The heat insulation block is a hollow square cylinder structure, wherein the wall of the cylinder is a hollow sandwich structure; the inner wall is used for coating the peripheral wall surface of a heat exchange block on the bottom of the crucible; a clearance is arranged between the inner wall and the peripheral wall surface of the heat exchange block; the outer wall is used for fixedly contacting a vertical heat insulation plate on the periphery of the crucible; the central line of the crucible, the central line of the heat exchange block and the central line of the heat insulation block coincide; and the top of the heat insulation block is lower than the top of the heat exchange block. The invention also discloses an ingot casting furnace provided with the heat insulation block. The heat insulation block can shorten the material melting time in the silicon ingot casting process, lowers the energy consumption, and can effectively inhibit the preferential growth of crystal grains near the crucible wall in the early nucleation period to obtain a slightly-convex and flat freezing interface, thereby enhancing the quality of the silicon ingot.
Description
Technical field
The present invention relates to polycrystalline silicon ingot or purifying furnace technical field, and in particular to a kind of heat insulation in polycrystalline silicon ingot or purifying furnace
And including the polycrystalline silicon ingot or purifying furnace of the heat insulation.
Technical background
Solar energy power generating is a kind of continuable energy utilization type, and green non-pollution, resource are relatively sufficient, do not receive
Many advantages, such as regional limitation, system operation are reliable makes which receive more and more extensive concern.Polysilicon solar cell is with which
Low cost, high conversion efficiency and be easy to batch production many advantages, such as become one of currently the most important photovoltaic products.
Polycrystal silicon ingot in polysilicon solar cell is generally prepared using casting method, at present, polycrystal silicon ingot casting side
Fado is directional solidification method.When directional solidification method polysilicon crystal grows, crucible bottom starts forming core, and crystal grain is vertically given birth to
Long, solidification end obtains columnar grain, now inside silicon ingot crystal boundary parallel to the direction of growth, silicon chip conversion efficiency is affected compared with
It is little.Polysilicon directional freezing process generally rises along with heat-insulation cage or heat insulating slab at bottom is moved down, and realizes earthenware using heat exchange mass
Crucible bottom heat radiation, but, at the forming core initial stage, the radiating of crucible bottom corner areas is very fast so that the fast fast-growing of crystal grain near sidewall of crucible
Length forms fine grained region, and crystal boundary deviates the direction of growth, while freezing interface concaves towards melt, the effect of segregation causes impurity to concentrate on silicon ingot
Inside, further reduces silicon chip photoelectric transformation efficiency.In addition, when polycrystal silicon ingot cooling starts, silicon ingot internal temperature is higher, crucible
Side wall radiating is too fast so that silicon ingot radial symmetry gradient increase at nearly wall, causes thermal stress herein to increase so that heat should under high temperature
The dislocation density rapid growth that power causes, is unfavorable for the growth of high-quality polycrystal silicon ingot.
Chinese patent application 200820031102.X discloses a kind of polycrystalline silicon ingot casting with graphitic cooling block heat preservation strips
Stove thermal field structure, which includes insulation cage body, heater, graphitic cooling block and the bottom surrounding installed in graphitic cooling block
Heat preservation strip, the structure reduce can the content of crystallite in effective coverage, and in making the crystal ingot produced, content of crystallite is 0%,
But which can not suppress sidewall of crucible preferential crystallization nearby, and at the nearly wall of crucible, inside silicon ingot, dislocation density is larger, therefore which is still present
Drawbacks described above.
Chinese patent application 201310327283.6 discloses a kind of polycrystalline silicon ingot or purifying furnace cooling soon, and which includes cooling block sheet
Body and crucible, wherein crucible are located at the top surface of cooling block body, and cooling block body top surface is provided with groove, and crucible is covered in groove
On, the central axes of the central axis of groove, the central axis of crucible and cooling block.It is in the program, square by arranging
The groove of shape utilizes the difference of the thermal conductivity of air and graphite, realizes the appropriate insulation to crucible corner part, such that it is able to press down
The preferred growth of crystal grain near sidewall of crucible processed, obtains relatively flat solid liquid interface, there is provided the quality of directional solidification polysilicon.
But, as groove is arranged on cooling block in the program, the heat exchanger effectiveness of crucible can be affected first so that change
Material time and cool time all greatly increase；Secondly as crucible is covered on groove so as to crucible bottom side wall
In the suppression of the fast-growth of crystal grain and cooling procedure, at crucible wall, inside silicon ingot, the suppression of dislocation density rapid growth is imitated
Really limited, Ingot quality is not high enough.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the present invention provides a kind of for the heat-insulated of polycrystalline silicon ingot or purifying furnace
Block and the polycrystalline silicon ingot or purifying furnace including the heat insulation, which not only can shorten the material time, reduce heater power consumption, and can also
Effectively suppress the fast-growth of crucible bottom side wall crystal grain, obtain dimpling and more straight freezing interface, while can also press down
Refrigeration but during dislocation density rapid growth inside silicon ingot at crucible wall, and then improve Ingot quality.
For achieving the above object, according to one aspect of the present invention, there is provided a kind of heat insulation for polycrystalline silicon ingot or purifying furnace,
The crucible bottom periphery of polycrystalline silicon ingot or purifying furnace is arranged on, the heat-insulation and heat-preservation in polysilicon process is heated or cooled for crucible, its
It is characterised by, the heat insulation is hollow square tube structure, and cylinder barrel is hollow sandwich structure, and wherein inwall is set for cladding
The heat exchange mass periphery wall in crucible bottom is put, and the inwall has gap with the heat exchange mass periphery wall face, it is described outer
Wall is contacted for being fixed with the vertical thermal insulation board for being arranged on crucible periphery, the crucible centrage, heat exchange mass centrage and
Heat insulation centrage overlaps, and less than at the top of heat exchange mass at the top of the heat insulation.
As the improvement of the present invention, it is plane at the top of the heat insulation, the internal face of bottom is in the interior low outer high conical surface, is made
Obtain the taper of the bottom for indent of the heat insulation internal face.
Used as the improvement of the present invention, the heat insulation base plate is provided with heat insulating slab at bottom moving up and down, the bottom every
Hot plate is provided with gap with the heat exchange mass bottom, and the gap is communicated with the cylinder barrel hollow layer.
It is another aspect of this invention to provide that providing a kind of polycrystalline silicon ingot or purifying furnace, which has above-mentioned heat insulation.
In the present invention, at the top of heat insulation, inside and outside wall is square, and it is identical symmetrical that inner hollow forms four sizes
Parallelepiped gas passage, gas passage top rectangular longest edge are parallel with inwall, and size is equal with the inwall length of side, most bond length
For 15～35mm, side wall DEN is generally aligned in the same plane with vertical thermal insulation board bottom side wall DBN, prevents gas passage from blocking, with
Take away the impurity in the heat and gas in polysilicon crystal growth course.
In the present invention, it is truncated rectangular pyramids cavity that heat insulation internal face forms interlayer with exterior face, to avoid heat exchange mass bottom
Radiation heat transfer is obstructed.
In the present invention, heat insulation is placed on vertical thermal insulation board base, preferably leave 5 between heat insulation and heat exchange mass～
10mm spaces, to discharge heat exchange mass and heat insulation because of the uneven expansion for causing of being heated.
In the present invention, silicon material is homogeneously disposed in crucible, and crucible is placed on heat exchange platform, and at the top of heat insulation, preferably shorter than heat is handed over
5～10mm at the top of block is changed, crucible centrage, heat exchange mass centrage, heat insulation centrage and vertical thermal insulation board centrage overlap.
In general, by the contemplated above technical scheme of the present invention compared with prior art, with following beneficial effect
Really：The present invention can shorten material time, reducing energy consumption during polycrystalline silicon ingot casting, can press down by arranging above-mentioned heat insulation
The fast-growth of forming core initial stage crucible base processed side-walls crystal grain, obtains dimpling and more straight freezing interface, while can also
Silicon ingot radial symmetry gradient near crucible wall enough in reduction cooling procedure so that silicon ingot built-in thermal stress reduces at nearly wall, enters
And the growth of suppression dislocation density, improve polycrystal silicon ingot quality.Specifically,
1) heat insulation has truncated rectangular pyramids cavity structure, truncated rectangular pyramids side is not intersected with radiation path ABB', it is to avoid hot friendship
Change block bottom radiation heat transfer to be obstructed.
2) heat insulation inner rectangular cavity is symmetrical, and away from heat insulation internal face, can optimize crucible thermal field nearby
And Flow Field Distribution, reduce crucible wall radial symmetry gradient in cooling procedure so that silicon ingot built-in thermal stress reduces at nearly wall, enters
And suppress the growth of dislocation density.
3) heat insulation is located at lower section at the top of heat exchange mass, it is possible to obtain dimpling freezing interface, and then suppresses forming core initial stage, earthenware
Crucible base side-walls crystal grain preferred growth.
Description of the drawings
Fig. 1 is according to the heat insulation constructed by the embodiment of the present invention and the ingot casting furnace body structural representation with the heat insulation
Figure；
Fig. 2 is the top view according to the heat insulation constructed by the embodiment of the present invention；
Fig. 3 is according to the heat insulation three-D space structure schematic diagram constructed by the embodiment of the present invention.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention,
It is not intended to limit the present invention.Additionally, technical characteristic involved in invention described below each embodiment is only
Not constitute conflict each other can just be mutually combined.
Referring to Fig. 1-3, the inside and outside wall in top according to the heat insulation 2 constructed by the embodiment of the present invention is square, in inside
The identical symmetrical parallelepiped gas passage 5 of sky four sizes of formation, 5 top rectangular longest edge of gas passage are put down with inwall
OK, size is equal with the inwall length of side is 840mm, and most minor face EK sizes are 15mm, side wall DEN and vertical thermal insulation board bottom side
Wall DBB' is generally aligned in the same plane, and heat insulation 2 is placed on 1 base of vertical thermal insulation board, and DF sizes are 22.5mm.Heat insulation internal face
CHG width is 145mm.Between heat insulation 2 and heat exchange mass 4, space is 10mm.Silicon material 7 is homogeneously disposed in crucible 6,6 water of crucible
Placing flat is less than 4 top 10mm of heat exchange mass, crucible centrage, heat exchange mass center on heat exchange platform 4, at the top of heat insulation 2
Line, heat insulation centrage and vertical thermal insulation board centrage overlap.Heat insulation 2 transfixion, bottom during whole ingot casting
Portion's thermal insulation board 8 vertically can be moved, to realize polycrystal silicon ingot cooling procedure.
In actual production process, polycrystalline silicon raw material 7 loads and scribbles in the crucible 6 of Si3N4 cushions first, then by crucible 6
It is placed in heat exchange mass 4, it is ensured that crucible centrage is overlapped with heat exchange mass centrage, then heat insulation 2 is placed in vertically
On 1 base of thermal insulation board, mobile heat insulating slab at bottom 8 to B is closed furnace chamber, carries out material, now as the insulation of heat insulation 2 is made
With causing, 2 top area temperature of heat insulation is very high, shortens the material time, and bottom section temperature is relatively low, thus reduces heating
Device power consumption.When polysilicon crystal growth starts, heat insulating slab at bottom 8 starts to move down, and now 6 bottom heat of crucible is entered by conduction of heat
Enter heat exchange mass 4, heat insulation 2 reduces the wall radiating of heat exchange mass side with 4 Sidewall spacers of heat exchange mass, and now heat exchange mass 4 is led
Heat loss through radiation is carried out by bottom, as crucible bottom is less than at the top of heat insulation, so as to certain guarantor is played to crucible bottom
Temperature effect, thus the freezing interface of dimpling can be obtained, it is suppressed that crucible bottom side wall crystal grain preferred growth.Cooling procedure starts
When, heat insulating slab at bottom 8 starts to move down, and now silicon ingot internal temperature is higher, due to the insulation effect of heat insulation so that crucible outer wall
Ambient air temperature is of a relatively high, and at the nearly wall of crucible, silicon ingot radial symmetry gradient is relatively reduced, reduces at nearly wall inside silicon ingot
Thermal stress, thus the rapid growth of the dislocation density that thermal stress under high temperature causes is inhibited, improve polycrystal silicon ingot quality.
As it will be easily appreciated by one skilled in the art that patent preferred embodiment of the present invention is the foregoing is only, and without
To limit the present invention, all any modification, equivalent and improvement made within the spirit and principles in the present invention etc., all should wrap
It is contained within protection scope of the present invention.
Claims (2)
1. a kind of heat insulation for polycrystalline silicon ingot or purifying furnace, is arranged on crucible (6) the bottom periphery of polycrystalline silicon ingot or purifying furnace, for earthenware
Crucible (6) is heated or cooled the heat-insulation and heat-preservation during polysilicon (7), it is characterised in that the heat insulation (2) is hollow square cylinder
Structure, cylinder barrel be hollow sandwich structure, wherein inwall for coat be arranged on crucible (6) bottom heat exchange mass (4) outward
Peripheral wall surfaces, and the inwall and the heat exchange mass (4) periphery wall face have a gap, the outer wall for be arranged on crucible (6)
The fixed contact of the vertical thermal insulation board (1) of periphery, is plane at the top of the heat insulation (2), and the internal face of bottom is in interior low outer high
The conical surface so that the bottom of the heat insulation (2) internal face for indent taper, heat insulation (2) base plate be provided with can on move down
Dynamic heat insulating slab at bottom (8), the heat insulating slab at bottom (8) and the heat exchange mass (4) bottom are provided with gap, and the gap with it is described
The hollow layer of cylinder barrel is communicated, crucible (6) centrage, heat exchange mass (4) centrage and heat insulation (2) centrage weight
Close, and less than at the top of heat exchange mass (4) at the top of the heat insulation (2).
2. a kind of polycrystalline silicon ingot or purifying furnace, which has the heat insulation described in the claims 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410631857.3A CN104372403B (en) | 2014-11-11 | 2014-11-11 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410631857.3A CN104372403B (en) | 2014-11-11 | 2014-11-11 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
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| Publication Number | Publication Date |
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| CN104372403A CN104372403A (en) | 2015-02-25 |
| CN104372403B true CN104372403B (en) | 2017-04-12 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105926036A (en) * | 2016-05-24 | 2016-09-07 | 山东省科学院能源研究所 | Polycrystalline silicon crystal growing furnace growth device and heat source adjusting method thereof |
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
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| JPH1192284A (en) * | 1997-09-10 | 1999-04-06 | Mitsubishi Materials Corp | Production of silicon ingot having polycrystal structure solidified in one direction |
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| JP2013116845A (en) * | 2011-12-05 | 2013-06-13 | Sharp Corp | Apparatus for manufacturing polysilicon ingot, polysilicon ingot, polysilicon block, polysilicon wafer, polysilicon solar cell, and polysilicon solar cell module |
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| CN204265888U (en) * | 2014-11-11 | 2015-04-15 | 华中科技大学 | The heat insulation of polycrystalline silicon ingot or purifying furnace and comprise the polycrystalline silicon ingot or purifying furnace of this heat insulation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1192284A (en) * | 1997-09-10 | 1999-04-06 | Mitsubishi Materials Corp | Production of silicon ingot having polycrystal structure solidified in one direction |
| CN101323973A (en) * | 2008-07-04 | 2008-12-17 | 绍兴县精工机电研究所有限公司 | Polysilicon directional long crystal thermal field |
| CN201506708U (en) * | 2009-09-29 | 2010-06-16 | 常州天合光能有限公司 | Thermal field structure for polycrystalline ingot production furnace |
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