CN104362134A - Sintering process of low-hole sliver nanowires for use between circuit substrate and radiator - Google Patents
Sintering process of low-hole sliver nanowires for use between circuit substrate and radiator Download PDFInfo
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- CN104362134A CN104362134A CN201410598620.XA CN201410598620A CN104362134A CN 104362134 A CN104362134 A CN 104362134A CN 201410598620 A CN201410598620 A CN 201410598620A CN 104362134 A CN104362134 A CN 104362134A
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Abstract
The invention discloses a sintering process of low-hole sliver nanowires for use between a circuit substrate and a radiator. A high-heat-conductivity interconnect thermal interface layer for the circuit substrate and the radiator is made by sintering the sliver nanowires. The sintering process includes the steps of 1, forming an Ni/Au layer or Ni/Ag layer on the surface of the radiator; plating copper to the back of the circuit substrate, and forming an Ni/Au layer or Ni/Ag layer on the back; 3, filling a gap between the radiator with the Ni/Au layer or Ni/Ag layer and the circuit substrate with the Ni/Au layer or Ni/Ag layer, with the sliver nanowires; and 4, performing sintering. The invention also discloses an application of the sintered sliver nanowire layer as the thermal interface layer for high-heat-conductivity interconnection of the circuit substrate and the radiator. The thermal interface layer has low porosity and allows high-heat-conductivity interconnection of the radiator and the circuit substrate.
Description
Technical field
The present invention relates to the nano-silver thread sintering process of low hole between a kind of circuit substrate and radiator.
Background technology
In recent years, electronic industry is flourish, and various high-power electronic component emerges in an endless stream, and on wiring board, the density of element is also increasing.This makes while energy consumption increases, and the heat of generation also increases greatly.If in time by transfer of heat, can not have an impact to the performance of element.The insulated substrate that traditional technique uses epoxy resin to manufacture, its thermal resistance is large, far can not meet the demand of high power device heat radiation; Use the substrate that ceramic material is made, although its heat conductivility is far longer than epoxy resin, but the connection between substrate and radiator needs to use heat-conducting glue, and the thermal resistance of heat-conducting glue is still very large, limit its heat-sinking capability equally, define heat radiation bottleneck, and metal substrate due to can with radiator integrated, radiating effect is improved greatly, so the metal substrate of high heat conduction in recent years obtains unprecedented development.
As the hot boundary layer connecting radiator and substrate, it plays key effect to the integral heat sink performance of radiator structure, and as previously mentioned, heat-conducting glue often becomes the heat radiation bottleneck of integral heat sink structure, and people seek other thermal interfacial materials, as adopted silver slurry or silver paste.Such as CN 1870310 A discloses: with the method for low-temperature nanosilver sintering packaging and connecting high power LED, it first prepares nano mattisolda, nano mattisolda is injected in connecting luminous diode on substrate by recycling silk screen printing or point gum machine, then put into sintering furnace to sinter, improve LED encapsulation material conductance, thermal conductivity, adhesive strength, high temperature resistant in deficiency.CN 102290117 A discloses: a kind of low temperature-sintered nano silver paste and preparation method thereof, and this nanometer silver paste is especially applicable to being applied to the Novel hot boundary material as power-type chip interconnects in Electronic Packaging field.
But, there is solvent or other volatile component in silver slurry or silver paste, in the process of sintering, solvent wherein or other volatile components evaporate from silver slurry or silver paste, in sintering silver layer, form a large amount of hole, therefore, cause the actual thermal conductivity of radiator structure still very low.
Summary of the invention
The object of the present invention is to provide the nano-silver thread sintering process of low hole between a kind of circuit substrate and radiator.
The technical solution used in the present invention is:
The hot boundary layer that circuit substrate and the heat conduction of radiator height interconnect, described hot boundary layer is that nano-silver thread is made by sintering.
The length of nano-silver thread is 40-70 μm, and diameter is 1-20nm.
The thickness of described hot boundary layer is 5-200 μm.
The porosity of described hot boundary layer is 0-5%.
A nano-silver thread sintering process for low hole between circuit substrate and radiator, step is as follows:
1) Ni/Au layer or Ni/Ag layer is formed in spreader surface;
2) in the electro-coppering of the circuit substrate back side, then Ni/Au layer or Ni/Ag layer is formed;
3) nano-silver thread is filled between the radiator after defining Ni/Au layer or Ni/Ag layer and circuit substrate;
4) sinter;
After oversintering, nano-silver thread layer defines hot boundary layer.
The temperature of sintering is 250-260 DEG C.
Described radiator is the radiator of metal material.
Nano-silver thread sinter layer is as the application of hot boundary layer in circuit substrate and the heat conduction of radiator height interconnect.
Beneficial effect of the present invention is:
Hot boundary layer of the present invention is the nano-silver thread sinter layer of low hole, can realize the high heat conduction interconnection of radiator and circuit substrate.
Specifically:
The present invention adopts sintering of nano-material silver line layer as the hot boundary layer between circuit substrate and radiator, compare with silver slurry or silver paste, there is not solvent, dispersant or other volatile components, the sintering of lower temperature can be realized, and after sintering, basic pore-free in sinter layer, namely through nano-silver thread sintering process of the present invention, between circuit substrate and radiator, define the hot boundary layer of low hole, thus radiator can be realized be connected with the high heat conduction of substrate.
Accompanying drawing explanation
Fig. 1 is the radiator structure schematic diagram comprising the hot boundary layer of the present invention.
Embodiment
The hot boundary layer that circuit substrate and the heat conduction of radiator height interconnect, wherein, described hot boundary layer is that nano-silver thread is made by sintering.
The length of nano-silver thread is 40-70 μm, and diameter is 1-20nm.
The thickness of described hot boundary layer is 5-200 μm; The porosity of described hot boundary layer is 0-5%.
A nano-silver thread sintering process for low hole between circuit substrate and radiator, step is as follows:
1) Ni/Au layer or Ni/Ag layer is formed in spreader surface;
2) in the electro-coppering of the circuit substrate back side, then Ni/Au layer or Ni/Ag layer is formed;
3) nano-silver thread is filled between the radiator after defining Ni/Au layer or Ni/Ag layer and circuit substrate;
4) sinter;
After oversintering, nano-silver thread layer defines hot boundary layer.
Step 1) and 2) in, the method forming Ni/Au layer or Ni/Ag layer is common practise, as re-plating silver after chemical nickel plating leaching gold or chemical nickel plating; Preferably, described Ni/Au layer or the thickness of Ni/Ag layer are 5-20 μm.
Step 2) in, the thickness of the layers of copper formed after the circuit substrate back side (for front, substrate front side laying electronic component) electro-coppering is 20-200 μm; Described circuit substrate is aluminium oxide after metalized or aluminum nitride ceramic substrate; The method for metallising of aluminium oxide or aluminum nitride ceramic substrate is prior art.
In step 4), the temperature of sintering is 250-260 DEG C; After sintering, the thickness of the sintering nano-silver thread layer of formation is 5-200 μm, and the porosity of the sintering nano-silver thread layer of formation is at 0-1%.
Described radiator is the radiator of metal material; Preferably, be aluminium radiator or copper radiator.
Sintering nano-silver thread layer is as the application of hot boundary layer in circuit substrate and the heat conduction of radiator height interconnect.
As shown in Figure 1, for comprising the radiator structure schematic diagram of the hot boundary layer of the present invention, the first coating surface of radiator 1 is provided with described in the first coating 2(is Ni/Au layer or Ni/Ag layer), the back side second coating be formed successively described in copper electroplating layer 5, second coating 4(of circuit substrate 6 is Ni/Au layer or Ni/Ag layer), between the first coating 2 and the second coating 4, be formed with hot boundary layer 3(nano-silver thread sintering make).
Below in conjunction with specific embodiment, the present invention is described further:
Embodiment 1:
A nano-silver thread sintering process for low hole between circuit substrate and radiator, step is as follows:
1) chemical nickel plating on surface protective treatment is carried out on aluminium radiator surface;
2) carry out in nickel coating surface again soaking gold process, thus form in spreader surface the Ni/Au layer that thickness is 5 μm;
3) in the electro-coppering of the aluminium oxide ceramic substrate back side, then carry out the process of chemical nickel plating leaching gold, thus obtain the Ni/Au layer that thickness is 8 μm;
4) nano-silver thread (length of nano-silver thread is 40-70 μm, and diameter is 1-20nm) is filled at the radiator defined after Ni/Au layer with after defining Ni/Au layer between ceramic substrate;
5) carry out sintering at 260 DEG C, after sintering, the thickness of the sintering nano-silver thread layer of formation is 5 μm.
Embodiment 2:
A nano-silver thread sintering process for low hole between circuit substrate and radiator, step is as follows:
1) chemical nickel plating on surface protective treatment is carried out on copper radiator surface;
2) carry out electrosilvering process in nickel coating surface again, thus form in spreader surface the Ni/Ag layer that thickness is 12 μm;
3) in the electro-coppering of the aluminum nitride ceramic substrate back side, then carry out the process of chemical nickel plating leaching gold, thus obtain the Ni/Au layer that thickness is 20 μm;
4) nano-silver thread (length of nano-silver thread is 40-70 μm, and diameter is 1-20nm) is filled at the radiator defined after Ni/Ag layer with after defining Ni/Au layer between ceramic substrate;
5) carry out sintering at 260 DEG C, after sintering, the thickness of the sintering nano-silver thread layer of formation is 80 μm.
Embodiment 3:
A nano-silver thread sintering process for low hole between circuit substrate and radiator, step is as follows:
1) chemical nickel plating on surface protective treatment is carried out on aluminium radiator surface;
2) again in the silver-plated process of nickel coating surface electrical, thus form in spreader surface the Ni/Ag layer that thickness is 20 μm;
3) in the electro-coppering of the aluminum nitride ceramic substrate back side, then carry out the process of chemical nickel plating leaching gold, thus obtain the Ni/Au layer that thickness is 5 μm;
4) nano-silver thread (length of nano-silver thread is 40-70 μm, and diameter is 1-20nm) is filled at the radiator defined after Ni/Ag layer with after defining Ni/Au layer between ceramic substrate;
5) carry out sintering at 260 DEG C, after sintering, the thickness of the sintering nano-silver thread layer of formation is 200 μm.
Through detecting, sintering nano-silver thread layer, its thermal conductivity is at 200-230 W/mK, and the porosity is between 0-5%; The thermal conductivity of integral heat sink structure is greater than 180 W/mK.
As a comparison, the silver slurry of preparation in CN 102290117 A embodiment one to three is adopted to replace nano-silver thread of the present invention, sinter at 260 DEG C, and the thermal conductivity of silver layer after sintering is at 170-180 W/mK, porosity > 10%.
Adopt the silver paste prepared in CN 1870310 A embodiment to replace nano-silver thread of the present invention, need to sinter at 290 DEG C, and the thermal conductivity of silver layer after sintering is at 175-190 W/mK, porosity > 8%.
Claims (8)
1. the hot boundary layer that interconnects of circuit substrate and the heat conduction of radiator height, is characterized in that: described hot boundary layer is that nano-silver thread is made by sintering.
2. the hot boundary layer that interconnects of circuit substrate according to claim 1 and the heat conduction of radiator height, is characterized in that: the length of nano-silver thread is 40-70 μm, and diameter is 1-20nm.
3. the hot boundary layer that interconnects of circuit substrate according to claim 1 and the heat conduction of radiator height, is characterized in that: the thickness of described hot boundary layer is 5-200 μm.
4. the hot boundary layer that interconnects of circuit substrate according to claim 1 and the heat conduction of radiator height, is characterized in that: the porosity of described hot boundary layer is 0-5%.
5. the nano-silver thread sintering process of low hole between circuit substrate and radiator, is characterized in that: step is as follows:
1) Ni/Au layer or Ni/Ag layer is formed in spreader surface;
2) in the electro-coppering of the circuit substrate back side, then Ni/Au layer or Ni/Ag layer is formed;
3) nano-silver thread is filled between the radiator after defining Ni/Au layer or Ni/Ag layer and circuit substrate;
4) sinter;
After oversintering, nano-silver thread layer defines hot boundary layer according to claim 1.
6. the nano-silver thread sintering process of low hole between a kind of circuit substrate according to claim 3 and radiator, is characterized in that: the temperature of sintering is 250-260 DEG C.
7. the nano-silver thread sintering process of low hole between a kind of circuit substrate according to claim 3 and radiator, is characterized in that: described radiator is the radiator of metal material.
8. nano-silver thread sinter layer is as the application of hot boundary layer in circuit substrate and the heat conduction of radiator height interconnect.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410598620.XA CN104362134A (en) | 2014-10-29 | 2014-10-29 | Sintering process of low-hole sliver nanowires for use between circuit substrate and radiator |
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| CN201410598620.XA CN104362134A (en) | 2014-10-29 | 2014-10-29 | Sintering process of low-hole sliver nanowires for use between circuit substrate and radiator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106129025A (en) * | 2015-05-05 | 2016-11-16 | 矽品精密工业股份有限公司 | Electronic device and method for manufacturing the same |
| US11081632B2 (en) | 2018-09-27 | 2021-08-03 | Chengdu Vistar Optoelectronics Co., Ltd. | Micro-LED chips and methods for manufacturing the same and display devices |
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| CN101349417A (en) * | 2008-09-18 | 2009-01-21 | 苏亚梅 | High heat conducting shimming material of LED light fitting heat radiation technique |
| US20090232991A1 (en) * | 2008-03-17 | 2009-09-17 | The Research Foundation Of State University Of New York | Composite thermal interface material system and method using nano-scale components |
| US20100181891A1 (en) * | 2009-01-20 | 2010-07-22 | Cheng-Shih Lee | Package Structure for Solid-State Lighting with Low Thermal Resistance |
| CN102601362A (en) * | 2012-03-20 | 2012-07-25 | 清华大学 | Metal nanoparticle based hot interface material and preparation method of metal nanoparticle based hot interface material |
| US20120280168A1 (en) * | 2011-05-03 | 2012-11-08 | Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense | Silver-nanowire thermo-interface material composite |
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- 2014-10-29 CN CN201410598620.XA patent/CN104362134A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090232991A1 (en) * | 2008-03-17 | 2009-09-17 | The Research Foundation Of State University Of New York | Composite thermal interface material system and method using nano-scale components |
| CN101349417A (en) * | 2008-09-18 | 2009-01-21 | 苏亚梅 | High heat conducting shimming material of LED light fitting heat radiation technique |
| US20100181891A1 (en) * | 2009-01-20 | 2010-07-22 | Cheng-Shih Lee | Package Structure for Solid-State Lighting with Low Thermal Resistance |
| US20120280168A1 (en) * | 2011-05-03 | 2012-11-08 | Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense | Silver-nanowire thermo-interface material composite |
| CN102601362A (en) * | 2012-03-20 | 2012-07-25 | 清华大学 | Metal nanoparticle based hot interface material and preparation method of metal nanoparticle based hot interface material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106129025A (en) * | 2015-05-05 | 2016-11-16 | 矽品精密工业股份有限公司 | Electronic device and method for manufacturing the same |
| CN106129025B (en) * | 2015-05-05 | 2018-12-14 | 矽品精密工业股份有限公司 | Electronic device and method for manufacturing the same |
| US11081632B2 (en) | 2018-09-27 | 2021-08-03 | Chengdu Vistar Optoelectronics Co., Ltd. | Micro-LED chips and methods for manufacturing the same and display devices |
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