CN104360691B - A kind of control method of critical dimension of contact hole - Google Patents
A kind of control method of critical dimension of contact hole Download PDFInfo
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- CN104360691B CN104360691B CN201410652823.2A CN201410652823A CN104360691B CN 104360691 B CN104360691 B CN 104360691B CN 201410652823 A CN201410652823 A CN 201410652823A CN 104360691 B CN104360691 B CN 104360691B
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Abstract
The invention discloses a kind of control method of critical dimension of contact hole, in the critical size needing to adjust contact hole, set by changing the voltage of MFC zero point, so that MFC is had and adjust increment size corresponding zero point initial flow with required etchant gas flow, to change the actual etchant gas flow in the etchant gas flow setting value that process menu specifies for the MFC, thus can be in the case of not changing process menu, the fine adjustments of the contact hole that achieves a butt joint critical size, on the premise of maintenance process controls and stablizes, decrease PM time unnecessary number, time and cost are saved.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, more particularly, to a kind of critical dimension of contact hole
Control method.
Background technology
Contact etch (contact etch, abbreviation CT etch) is one of semiconductor manufacturing important step.Contact
It is to make mask using photoresistance (Photo Resist, abbreviation PR) that pitting is carved, and the oxide-film below photoresistance, nitride film are carved one
Vertical core (i.e. contact hole), for passing through contact hole with line (filling is in the contact hole) and superstructure (diagram by underlying components
Omit) it is connected.The size of contact hole is directly connected to electric capacity, resistance sizes and the RC retardation ratio of line, therefore, contact hole
Critical size (CD) becomes a very important parameter.
Etching to contact hole to be realized using dry plasma etch (Plasma Dry Etch) technique.Deng from
Sub- dry etching is to send in the dry plasma etch cavity (chamber) of a sealing by wafer (wafer), then presses work
The setting of skill menu (recipe), is passed through various process gas, and in the presence of radio-frequency power supply (RF Power), makes in cavity
Etching gas be stimulated generation plasma, using the corrosive power to media such as oxide-film/nitride films for the plasma, realize
Etching to wafer contacts hole.
The dry plasma etch of contact hole is generally divided into following step：
1) etching of antagonistic reflex layer (Barc/Darc)；
2) etching to oxide-film (Oxide Etch)；
3) it is to improve the selection to bottom under oxide-film than the overetch (Over Etch) carrying out；
4) etching to oxide layer bottom nitride film (SiN etch)；
5) other steps that other are carried out to mitigate reacting generating copolymer (polymer) and stress.
In 12 cun of semiconductor fabrication facility, the CD of contact hole is typically in below 100nm, or even only 60～70nm.Cause
This, for the consideration ensureing finished product yield, in contact etch production technology, need to adopt 6sigma to the CD of contact hole
Method is controlling its deviation.And be directed to the CD size of above-mentioned contact hole, in 6sigma method it is allowed to CD deviation only only have
Below 10nm, or even only 5nm about, it controls difficulty very big.
In general, the exploitation of semiconductor fabrication process and volume production transfer, is all first to be directed to certain specific board cavity
Develop, start volume production after succeeding in developing, and need to be deployed into other boards and cavity according to production technology.And with production capacity
Raising, intrinsic between number during RF (radio frequency) of cavity critical component, the different time sections in maintenance period and different cavity
The factor such as difference (even very subtle difference), the CD of contact hole all can be led to produce and to change.Therefore, will develop into
A set of process menu of work(is applied to different boards and cavity and to be controlled the CD deviation of contact hole using 6sigma method
When, the little reason of limit will be controlled because of the impact of above-mentioned factor and deviation, cause CD easily to exceed and control the phenomenon of limit to take place frequently, make
Contact hole CD is maintained at and is increasingly difficult in the range of 6sigma, and lead to a set of menu application difficult when different boards and cavity
With general problem.
In above-mentioned etch process step, the step maximum on contact hole CD impact is the first step, i.e. antagonistic reflex layer
Etching.The gas typically used in etching includes O2、Ar、CO、CO2、CF4、C4F8、C4F6、C3F8、CHF3、CH2F2Deng gas,
And O can be used in the anti-reflecting layer etching of contact hole2And CF4Deng gas, wherein, with O2The CD of contact hole is affected maximum.
Dry plasma etch cavity is next smart using MFC (Mass Flow Controller, mass flow controller)
Really control etchant gas flow.When certain board cavity occurs CD to prescribe a time limit beyond control in contact etch, by directly repairing
Change dry etching board to serve O in list2Flow, and accordingly control the flow output of MFC, can reach and direct adjust contact hole
The purpose of CD.But do so can make the menu of same names inconsistent in the control parameter of different platform, causes to menu
Coherency management brings very big problem, and is more prone to occur the variation tendency of CD is difficult to predict and controls in process control
The problem of system.
Due to should not being changed due to menu, the method that existing corresponding contact hole CD runaways, is to enter immediately
An actor's rendering of an operatic tune body is safeguarded (PM), the part of replacing or cleaning chamber.The shortcoming of this method is that time-consuming, high cost.Typically do one
Secondary cavity is safeguarded needs a workaday time, and along with the test job therefore bringing, whole maintenance process needs time-consuming
One to two days, also will bring the rising of cost because changing part.
Therefore, how on the premise of not changing menu, one kind is provided can be conveniently adjusted O2The method of flow, to control
Contact hole CD processed is so that the 6sigma that the CD of contact hole can be maintained at technology controlling and process controls in the range of limit, and maintenance process controls
Stablize, to reduce PM time unnecessary number, save time and cost, become an important class of current contact etch technique
Topic.
Content of the invention
It is an object of the invention to the drawbacks described above overcoming prior art to exist, provide a kind of control of critical dimension of contact hole
Method processed, in the critical size needing to adjust contact hole, is set by changing the voltage of MFC (mass flow controller) zero point
Fixed, so that described MFC is had and adjust increment size corresponding zero point initial flow with required etchant gas flow, described to change
The actual etchant gas flow in the etchant gas flow setting value that process menu specifies for the MFC, thus technique can not changed
In the case of menu, the fine adjustments of the contact hole that achieves a butt joint critical size, on the premise of maintenance process controls and stablizes, decrease
PM time unnecessary number, has saved time and cost.
For achieving the above object, technical scheme is as follows：
A kind of control method of critical dimension of contact hole, for contact etch technique, including：
Step one：One is provided to utilize MFC to control the dry plasma etch cavity of etchant gas flow, and according to etching work
The etchant gas flow setting value that skill menu specifies carries out contact etch to a wafer batch；
Step 2：The critical dimension of contact hole of described wafer batch is detected, by being contrasted with controlling limit, and
According to the corresponding relation between etchant gas flow and critical dimension of contact hole, determine flow adjustment increment size；
Step 3：Linear corresponding relation between control voltage according to described MFC and etchant gas flow, by calculating
Obtain the zero-point voltage regulated value of described MFC, and adjust the zero point of described MFC accordingly forward or backwards, make described MFC have with
Described flow adjusts increment size corresponding zero point initial flow, makes the reality in described flow setting value for the described MFC to change
Etchant gas flow is equal to described flow setting value and adjusts increment size sum with described flow；
Step 4：According to described flow setting value, it is passed through etching gas to the described MFC with described zero-point voltage regulated value
Subsequent wafer batch repeat the above steps are carried out contact etch by body.
Preferably, have between the zero-point voltage regulated value of described MFC and the described flow adjustment increment size of etching gas
Following relation：
VO=V1-(L1+L⊿)Vmax/Lmax
Wherein, VOZero-point voltage regulated value for MFC, V1For the control voltage of MFC during corresponding flow setting value, VmaxFor
The control voltage of MFC during corresponding full scale flow, L1For flow setting value, L⊿Adjust increment size, L for flowmaxFor full scale
Flow.
Preferably, described flow adjusts increment size L⊿Be to determined by current wafer batch flow adjustment increment size with right
The flow that all wafer batches determine respectively before adjusts the value preset of increment size, the zero-point voltage regulated value V of described MFCOFor
Corresponding zero-point voltage adds up to regulated value.
Preferably, described flow adjusts increment size L⊿It is to flow adjustment increment size, institute determined by current wafer batch
State the zero-point voltage regulated value V of MFCOFor corresponding zero-point voltage when time increment regulated value.
Preferably, described flow adjustment increment size be on the occasion of or negative value, when described flow adjustment increment size be on the occasion of when, institute
The zero-point voltage regulated value stating MFC is negative value；When described flow adjustment increment size is negative value, the zero-point voltage of described MFC is adjusted
Section value be on the occasion of.
Preferably, the zero-point voltage regulated value of described MFC be on the occasion of or negative value, its maximal regulated amplitude is corresponding full scale
± the 0.4% of the control voltage of MFC during flow.
Preferably, the range of accommodation of the zero-point voltage regulated value of described MFC is -20～+20mv.
Preferably, the corresponding relation between described etchant gas flow and critical dimension of contact hole, according to different products
Require, and production technology factor, and incorporate experience into data determination.
Preferably, when the etchant gas flow setting value that etch process menu specifies changes, again according to new flow
Setting value repeat step one～step 4.
Preferably, described etching gas is oxygen.
From technique scheme as can be seen that the present invention is in the critical size needing to adjust contact hole, by changing MFC
The voltage of zero point sets, and so that described MFC is had and adjusts increment size corresponding zero point initial flow with required etchant gas flow,
To change the actual etchant gas flow in the etchant gas flow setting value that process menu specifies for the described MFC, thus can be
In the case of not changing process menu, the fine adjustments of the contact hole that achieves a butt joint critical size are so that in different board machine conditions, dimension
Under shield cycle, part use time situation, and the critical size of the contact hole produced between different platform can be maintained at
In 6sigma span of control, maintain the yield of product, decrease the cavity maintenance times of board, reduce cost, improve
The mobility (up-time) of board.
Brief description
Fig. 1 is a kind of flow chart of the control method of critical dimension of contact hole of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings, the specific embodiment of the present invention is described in further detail.
In following specific embodiments of the present invention, refer to Fig. 1, Fig. 1 is a kind of critical dimension of contact hole of the present invention
Control method flow chart.As shown in figure 1, the control method of the critical dimension of contact hole of the present invention, for contact etch
Technique, comprises the following steps：
As shown in frame S01, step one：One is provided to utilize MFC to control the dry plasma etch cavity of etchant gas flow,
And the etchant gas flow setting value specifying according to etch process menu carries out contact etch to a wafer batch.
Dry plasma etch cavity is next smart using MFC (Mass Flow Controller, mass flow controller)
Really control etchant gas flow.When certain board cavity is in contact etch, according to the process menu of dry etching board
Specified in etchant gas flow, can accordingly control the etchant gas flow of MFC to export, reach control contact hole CD (crucial chi
Very little) purpose of size.
In the control method using the present invention, it is first according to etchant gas flow setting value that process menu specifies to certain
One wafer batch carries out contact etch it is therefore an objective to determine the normal condition of a control contact hole CD, and gathers the CD of needs
Data.
In contact etch processing step, the step maximum on contact hole CD impact is antagonistic reflex layer (Barc/
Darc etching).The gas typically used in whole etching process includes O2、Ar、CO、CO2、CF4、C4F8、C4F6、C3F8、
CHF3、CH2F2Deng gas, and O can be used in the anti-reflecting layer etching of contact hole2And CF4Deng gas, wherein, with O2To contact
The CD impact in hole is maximum.Therefore, below with O2As a example, illustrate and how to pass through MFC to O2Flow adjustment be controlled, with
Fine adjustments are carried out to the CD of contact hole, and controls in the span of control of 6sigma.
As shown in frame S02, step 2：The critical dimension of contact hole of described wafer batch is detected, by with control
Limit is contrasted, and according to the corresponding relation between etchant gas flow and critical dimension of contact hole, determines flow adjustment increment
Value.
After completing the contact etch to certain wafer batch above-mentioned, the critical dimension of contact hole of described wafer batch is entered
Row detection.Existing measuring apparatus such as optics live width measuring instrument, critical dimension of contact hole to described wafer batch can be utilized
Detected.Then, the 6sigma of the critical dimension of contact hole data obtaining after detection and this board is controlled limit to be contrasted,
Judge CD whether beyond the standard (comparing with controlling limit, CD is bigger than normal or less than normal) controlling.
When CD exceeds control standard, demonstrate the need for CD is adjusted；Or although CD not yet exceeds control standard,
There is trend out of control it is also desirable to be adjusted to CD.This adjustment to be implemented for next wafer batch.Adjustment method be
Realize the adjustment to CD size by adjusting the flow of etching gas.And the foundation adjusting be flow according to etching gas with
Corresponding relation between critical dimension of contact hole, to determine the basis in etchant gas flow specified in existing process menu
On, need the flow of the etching gas adjusting to adjust increment size.When CD is bigger than normal, needs to reduce the flow of etching gas, that is, lose
The flow adjustment increment size carving gas is negative value, adds that flow adjusts increment size with etchant gas flow specified in process menu
(negative value), can get the etchant gas flow total amount of required reduction；Conversely, when CD is less than normal, needing to increase etching gas
Flow, that is, the flow adjustment increment size of etching gas is on the occasion of with etchant gas flow specified in process menu plus flow
Adjustment increment size (on the occasion of), can get the etchant gas flow total amount of required increase.
As those skilled in the art it is readily appreciated that ground, between described etchant gas flow and critical dimension of contact hole
Corresponding relation, can be according to different product requirements, and production technology factor, and incorporate experience into data to be determined.
As shown in frame S03, step 3：Linear corresponding between control voltage according to described MFC and etchant gas flow
Relation, by being calculated the zero-point voltage regulated value of described MFC, and adjusts the zero point of described MFC accordingly forward or backwards, makes
Described MFC has and described flow adjustment increment size corresponding zero point initial flow, so that described MFC is set in described flow to change
Actual etchant gas flow during definite value is equal to described flow setting value and adjusts increment size sum with described flow.
Between the control voltage of MFC and etchant gas flow, there is linear corresponding relation.MFC is the mode with control voltage
To control flow.The maximum controlling voltage of general MFC is 5v, corresponding with maximum controlling voltage be MFC maximum stream flow.Than
If maximum stream flow is the O of 100sccm2MFC, when control voltage is 1v, the O of corresponding output2Flow be (1v/5v) ×
100sccm=20sccm.By that analogy.
Linear corresponding relation between control voltage according to MFC and etchant gas flow, when CD is bigger than normal or less than normal, root
Adjust increment size (negative value or on the occasion of) according to required flow, by calculating the control voltage value that can be obtained by described MFC.Example
As O specified in process menu2Etchant gas flow is 20sccm, the O determining2When flow adjustment increment size is 0.4sccm,
Total O2Etchant gas flow is 20.4sccm, then the control voltage value of the MFC needing be (20.4sccm/100sccm) ×
5v=1.02v.And the control voltage value corresponding to the MFC that flow is during 20sccm is 1v, that is, the control voltage value of MFC increased
0.02v.
Dry plasma etch cavity is come precise control etchant gas flow using MFC.When certain board cavity exists
Contact etch occurs CD to prescribe a time limit beyond control, is served O in list by directly changing dry etching board2Flow, and accordingly
Control the flow output of MFC, the direct purpose adjusting contact hole CD can be reached.But do so can make the menu of same names
Inconsistent in the control parameter of different platform, cause to bring very big problem to the coherency management of menu, and in process control
In be more prone to the problem that occurs the variation tendency of CD is difficult to predict and control.
The purpose of the present invention is exactly on the premise of not changing menu, realizes the adjustment to CD and controls.And the intrinsic spy of MFC
Property be MFC zero point influence whether MFC actual flow output.Using this inherent character of MFC, the present invention is not changing menu
On the premise of, can be by adjusting the zero point changing MFC, that is, the zero-point voltage of regulation MFC deviates total null voltage during correcting state,
Make described MFC have certain zero point initial flow (on the occasion of or negative value), to change the described stream making described MFC specify in menu
Actual etchant gas flow during amount setting value.So, menu avoids the need for modifying, and also would not cause same names
Menu is in the inconsistent situation of the control parameter of different platform, thus ensure that the coherency management to menu.
The zero-point voltage regulated value of MFC is consistent with the linear relationship of the regulated value of the control voltage of MFC.Therefore, such as
The regulated value needs of the control voltage of fruit MFC are how many, and the zero-point voltage regulated value of MFC is i.e. equal therewith, but the tune of zero-point voltage
Section direction (i.e. zero-point voltage be on the occasion of or negative value) be contrary with the increase and decrease of control voltage, that is, when needing increase control voltage
When, need to adjust zero-point voltage to negative value direction.Otherwise analogize.
Have with ShiShimonoseki between the zero-point voltage regulated value of described MFC and the described flow adjustment increment size of etching gas
System：
VO=V1-(L1+L⊿)Vmax/Lmax
Wherein, VOZero-point voltage regulated value for MFC, V1For the control voltage of MFC during corresponding flow setting value, VmaxFor
The control voltage of MFC during corresponding full scale flow, L1For flow setting value, L⊿Adjust increment size, L for flowmaxFor full scale
Flow.
For example, with the O of the CD impact maximum on contact hole2As a example flow, as full scale flow LmaxDuring for 100sccm, right
Answer full scale flow LmaxWhen MFC control voltage VmaxFor 5v if it is determined that flow adjustment increment size L⊿For 0.4sccm
(on the occasion of that is, CD is less than normal, needs to increase O2Flow), the O that menu specifies2Flow setting value L1For 20sccm, then correspond to O2Flow sets
Definite value L1When MFC control voltage V1For 1v.Data is substituted into above-mentioned formula, you can obtain the zero-point voltage regulated value V of MFCO
For -0.02v.Now, the O of menu2Flow setting value is still 20sccm, does not change, but final actual flow is menu rule
Fixed O2Flow setting value L1With the flow adjustment increment size L determining⊿Sum：(1v+0.02v) × 100sccm/5v=
20.4sccm, bigger than menu setting value 0.4sccm.
Whereas if the flow adjustment increment size L determining⊿For -0.4sccm, (negative value, that is, CD is bigger than normal, needs to reduce O2Stream
Amount), other conditions are constant, and data is substituted into above-mentioned formula, you can obtain the zero-point voltage regulated value V of MFCOFor 0.02v.This
When, the O of menu2Flow setting value is still 20sccm, does not change, but the O that final actual flow is menu to be specified2Flow sets
Definite value L1With the flow adjustment increment size L determining⊿(negative value) sum：(1v-0.02v) × 100sccm/5v=19.6sccm, than
The little 0.4sccm of menu setting value.
In summary, that is, described flow adjustment increment size can be on the occasion of or negative value, when described flow adjust increment size
Be on the occasion of when, the zero-point voltage regulated value of described MFC is negative value (adjusting to voltage negative value direction)；When described flow adjusts increment
When being worth for negative value, the zero-point voltage regulated value of described MFC is on the occasion of (adjusting on the occasion of direction to voltage).
In general, the SPEC to the management of the zero point of MFC (controlling limit) is about within +/- 20mv, in this SPEC,
Range of accommodation to gas flow is 20mv × 2/5v × 100sccm, that is, described flow adjusts the range of accommodation of increment size
In the range of the 0.8% of maximum stream flow (± 0.4%).The namely maximal regulated amplitude of the zero-point voltage regulated value of described MFC
± 0.4% (adjusted value forward or backwards) for the control voltage of MFC during corresponding full scale flow.
By adjusting the zero-point voltage of MFC, the O having crucial effect to CD can be made2Flow has corresponding change, Ran Houtong
Cross O2The change of flow is controlling the CD of contact hole.If CD is big, the zero point of MFC is adjusted toward positive direction, adjusting range
Within+20mv；If CD is less than normal, the zero point of MFC is adjusted toward negative direction, adjusting range is within -20mv.
As shown in frame S04, step 4：According to described flow setting value, to having described in described zero-point voltage regulated value
MFC is passed through etching gas, carries out contact etch to subsequent wafer batch repeat the above steps.
When contact etch is carried out to subsequent wafer batch repeat the above steps, the etching gas that etch process menu specifies
Flow setting value is immovable.After the CD of later batch wafer batch detects, according to the step of said method, judgement is
No needs continue adjustment O2Flow, and determine the O of this batch of wafer batch2Flow adjustment increment size.It should be noted that
Zero point due to MFC passes through regulation, deviate from zero-bit during correcting state, therefore, the O that now determines2Flow adjustment
Increment size L⊿Should be to flow adjustment increment size determined by current wafer batch and to flow determined by wafer batch before
The value preset of adjustment increment size, the zero-point voltage regulated value V of described MFCOAdd up to regulated value for corresponding zero-point voltage.
For example, if the flow adjustment increment size determining when adjusting for the first time is -0.2sccm, illustrate that CD is bigger than normal, in substitution
State formula, the zero-point voltage regulated value obtaining corresponding MFC is 0.01v；So, adjusted O2Next group wafer lot after flow
If secondary CD is still bigger than normal, the flow adjustment increment size determining again is still -0.2sccm, then the zero of the MFC obtaining for the second time
Point voltage regulated value is also 0.01v, needs to be further added by adjusting 0.01v on the basis of original zero-point voltage regulated value 0.01v,
The zero-point voltage being exactly reflected on MFC is to be adjusted to 0.02v, i.e. zero-point voltage regulated value sum (0.01v+0.01v=twice
0.02v), rather than according to the zero-point voltage regulated value of the MFC obtaining for the second time the zero-point voltage on MFC is maintained 0.01v
Constant.Corresponding, O2Flow adjustment increment size L⊿Should be twice determined by flow adjust increment size value preset (-
0.2sccm-0.2sccm=-0.4sccm).
It is of course also possible to the described flow in above-mentioned formula is adjusted increment size L⊿Regard as is to current wafer batch institute really
Fixed flow adjustment increment size, in this case, the zero-point voltage regulated value V of described MFCOBe corresponding to current wafer
Zero-point voltage determined by batch is when time increment regulated value.At this moment, need the flow adjustment increment size institute for each determination right
The single zero-point voltage regulated value answered, on the basis of conventional zero-point voltage regulated value, plus-minus is adjusted.
For example, in the above example, if the flow adjustment increment size determining when adjusting for the first time is -0.2sccm, explanation
CD is bigger than normal, substitutes into above-mentioned formula, and the zero-point voltage regulated value obtaining corresponding MFC is 0.01v, then adjust the zero-point voltage of MFC
Save 0.01v, now, O2Actual flow will reduce；So, adjusted O2If the CD of the next group wafer batch after flow
Still bigger than normal, the flow adjustment increment size determining again is still -0.2sccm, then the zero-point voltage of the MFC obtaining for the second time is adjusted
Value is also 0.01v, needs also exist for being further added by adjusting 0.01v on the basis of original zero-point voltage regulated value 0.01v, that is, instead
Reflecting zero-point voltage on MFC is to be adjusted to 0.02v, i.e. zero-point voltage regulated value sum (0.01v+0.01v=twice
0.02v), rather than according to the zero-point voltage regulated value of the MFC obtaining for the second time the zero-point voltage on MFC is maintained 0.01v
Constant.Corresponding, O2Flow adjustment increment size L⊿Also should be on the basis of flow adjustment increment size determined by first time
(actual flow is 20sccm-0.2sccm=19.8sccm), is further continued for reducing the O of 0.2sccm2(actual flow is changed into flow
20sccm-0.2sccm-0.2sccm=19.6sccm).
Two kinds of form of presentations of the above-mentioned zero-point voltage regulated value to MFC, reach the same goal by different routes, and it all represents and adjusts each time
During the zero-point voltage of MFC, the plus-minus that all should proceed magnitude of voltage on the basis of conventional regulation is adjusted, rather than adjusts to conventional
The zero of section value.
Also, it should be noted when the etchant gas flow setting value that etch process menu specifies changes, such as changing
During wafer CD (namely changing wafer batch), should be again real according to new flow setting value repeat the above steps one～step 4
The control method of the existing present invention.The change of etchant gas flow setting value now, belongs to normal technique switching.
In sum, the present invention, when when the critical size needing to adjust contact hole, is set by changing the voltage of MFC zero point
Fixed, so that described MFC is had and adjust increment size corresponding zero point initial flow with required etchant gas flow, described to change
The actual etchant gas flow in the etchant gas flow setting value that process menu specifies for the MFC, thus technique can not changed
In the case of menu, the fine adjustments of the contact hole that achieves a butt joint critical size are so that in different board machine conditions, maintenance period, portion
Under part use time situation, and the critical size of the contact hole produced between different platform can be maintained at 6sigma control
In the range of, maintain the yield of product, decrease the cavity maintenance times of board, reduce cost, improve sowing of board
Rate (up-time).
Above-described only the preferred embodiments of the present invention, the patent that described embodiment is simultaneously not used to limit the present invention is protected
The equivalent structure change that shield scope, the description of therefore every utilization present invention and accompanying drawing content are made, should be included in the same manner
In protection scope of the present invention.
Claims (9)
1. a kind of control method of critical dimension of contact hole, for contact etch technique it is characterised in that including：
Step one：One is provided to utilize mass flow controller MFC to control the dry plasma etch cavity of etchant gas flow, and
According to the etchant gas flow setting value that etch process menu specifies, contact etch is carried out to a wafer batch；
Step 2：The critical dimension of contact hole of described wafer batch is detected, by being contrasted with controlling limit, and according to
Corresponding relation between etchant gas flow and critical dimension of contact hole, determines flow adjustment increment size；
Step 3：Linear corresponding relation between control voltage according to described MFC and etchant gas flow, by being calculated
The zero-point voltage regulated value of described MFC, and adjust the zero point of described MFC accordingly forward or backwards, make described MFC have with described
Flow adjusts increment size corresponding zero point initial flow, makes the actual etching in described flow setting value for the described MFC to change
Gas flow is equal to described flow setting value and adjusts increment size sum with described flow；
Step 4：According to described flow setting value, it is passed through etching gas to the described MFC with described zero-point voltage regulated value,
Contact etch is carried out to subsequent wafer batch repeat the above steps.
2. the control method of critical dimension of contact hole according to claim 1 is it is characterised in that the zero point of described MFC is electric
Between pressure regulated value and the described flow adjustment increment size of etching gas, there is following relation：
VO=V1-(L1+L⊿)Vmax/Lmax
Wherein, VOZero-point voltage regulated value for MFC, V1For the control voltage of MFC during corresponding flow setting value, VmaxFor correspondence
The control voltage of MFC during full scale flow, L1For flow setting value, L⊿Adjust increment size, L for flowmaxFor full scale stream
Amount.
3. the control method of critical dimension of contact hole according to claim 2 is it is characterised in that described flow adjusts increment
Value L⊿It is to flow adjustment increment size determined by current wafer batch and to the stream that all wafer batches determine respectively before
The value preset of amount adjustment increment size, the zero-point voltage regulated value V of described MFCOAdd up to regulated value for corresponding zero-point voltage.
4. the control method of critical dimension of contact hole according to claim 2 is it is characterised in that described flow adjusts increment
Value L⊿It is to flow adjustment increment size, the zero-point voltage regulated value V of described MFC determined by current wafer batchOFor corresponding
Zero-point voltage is when time increment regulated value.
5. the control method of the critical dimension of contact hole according to Claims 1 to 4 any one is it is characterised in that described
Flow adjustment increment size be on the occasion of or negative value, when described flow adjustment increment size be on the occasion of when, the zero-point voltage of described MFC is adjusted
It is worth for negative value；When described flow adjustment increment size is negative value, the zero-point voltage regulated value of described MFC be on the occasion of.
6. the control method of the critical dimension of contact hole according to claims 1 to 3 any one is it is characterised in that described
The zero-point voltage regulated value of MFC be on the occasion of or negative value, its maximal regulated amplitude is the control electricity of MFC during corresponding full scale flow
± the 0.4% of pressure.
7. the control method of critical dimension of contact hole according to claim 6 is it is characterised in that the zero point of described MFC is electric
The range of accommodation of pressure regulated value is -20～+20mv.
8. the control method of critical dimension of contact hole according to claim 1 is it is characterised in that work as etch process menu rule
When fixed etchant gas flow setting value changes, again according to new flow setting value repeat step one～step 4.
9. the control method of the critical dimension of contact hole according to claim 1,2 or 8 is it is characterised in that described etching gas
Body is oxygen.
Priority Applications (1)
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| CN102810445A (en) * | 2011-05-31 | 2012-12-05 | 东京毅力科创株式会社 | Plasma processing apparatus and gas supply method therefor |
| CN102944983A (en) * | 2012-11-28 | 2013-02-27 | 上海华力微电子有限公司 | Method for improving key dimension measurement of pattern to be measured |
| CN103337467A (en) * | 2013-06-27 | 2013-10-02 | 上海华力微电子有限公司 | Measuring method for removing amount of bottom metal layer of contact hole |
| CN103915378A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Etching method for improving uniformity of contact hole line width |
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| JP5057647B2 (en) * | 2004-07-02 | 2012-10-24 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102810445A (en) * | 2011-05-31 | 2012-12-05 | 东京毅力科创株式会社 | Plasma processing apparatus and gas supply method therefor |
| CN102944983A (en) * | 2012-11-28 | 2013-02-27 | 上海华力微电子有限公司 | Method for improving key dimension measurement of pattern to be measured |
| CN103337467A (en) * | 2013-06-27 | 2013-10-02 | 上海华力微电子有限公司 | Measuring method for removing amount of bottom metal layer of contact hole |
| CN103915378A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Etching method for improving uniformity of contact hole line width |
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