CN104348472A - Voltage level converting circuit - Google Patents
Voltage level converting circuit Download PDFInfo
- Publication number
- CN104348472A CN104348472A CN201410234318.6A CN201410234318A CN104348472A CN 104348472 A CN104348472 A CN 104348472A CN 201410234318 A CN201410234318 A CN 201410234318A CN 104348472 A CN104348472 A CN 104348472A
- Authority
- CN
- China
- Prior art keywords
- transistor
- electrical connection
- voltage
- output
- level voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims description 26
- 150000004706 metal oxides Chemical class 0.000 claims description 26
- 230000000295 complement effect Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 abstract description 3
- 230000007704 transition Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000009024 positive feedback mechanism Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Logic Circuits (AREA)
Abstract
A voltage level converting circuit includes: a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. The sixth transistor and the seventh transistor are arranged to provide equivalent high resistance, the latching capacity of the third transistor and the fourth transistor can be weakened, when the voltage difference of the input voltage is at a lower level, the circuit can still smoothly transit, the fifth transistor and the eighth transistor are arranged in a matched mode to provide a conduction path, the rising or falling time of an output signal can be shortened, and under the same transit time requirement, the invention can reduce the layout area and reduce the dynamic current consumption compared with the voltage level switching circuit in the prior art.
Description
Technical field
The present invention relates to a kind of change-over circuit, particularly relate to a kind of voltage quasi position change-over circuit.
Background technology
Voltage quasi position change-over circuit is apply a kind of change-over circuit very widely in current electronic circuit, for being changed between different voltage quasi position by signal.
Consult Fig. 1, existing a kind of voltage quasi position change-over circuit (Fig. 1 uses the voltage quasi position change-over circuit of N-Type as explanation) comprises a first transistor M1, transistor seconds M2, a third transistor M3, and a 4th transistor M4.
This first transistor M1 has the second end that exports the first end of a reversed-phase output signal OUTB, an electrical connection low level voltage VN, and the control end of a reception input signal IN.
This transistor seconds M2 has one and exports the first end of an output signal OUT, second end of this low level voltage of electrical connection VN, and the control end of a reception rp input signal INB.
This third transistor M3 has the second end that exports the first end of this reversed-phase output signal OUTB, an electrical connection high levle voltage VP, and the control end of the first end of this transistor seconds of electrical connection M2.
4th transistor M4 has one and exports the first end of this output signal OUT, second end of this high levle voltage of electrical connection VP, and the control end of the first end of this first transistor of electrical connection M1.
During general use, this voltage quasi position change-over circuit is used for this input signal IN and this rp input signal INB to be converted to this output signal OUT and this reversed-phase output signal OUTB, wherein, this input signal IN and this rp input signal INB is differential signal, and its voltage level difference is lower than the voltage level difference (voltage level of this high levle voltage VP and this low level voltage VN is poor) of this output signal OUT and this reversed-phase output signal OUTB.
The first transistor M1 and transistor seconds M2 is that input difference is to (differential input pair), third transistor M3 and the 4th transistor M4 then forms a positive feedback (positive feedback) mechanism, as same latch circuit (latch circuit), or be called cross-coupled pair (cross-coupled pair), when circuit operates, the first transistor M1 and transistor seconds M2 must provide enough dynamic current to untie this latch circuit, just can make this input signal IN, rp input signal INB normal conversion is this output signal OUT, reversed-phase output signal OUTB.
But, as critical voltage (threshold voltage) close to input stage transistor (i.e. the first transistor M1 and transistor seconds M2) of the voltage quasi position of input signal IN, rp input signal INB, transition difficulty can be met with, and easily cause circuit to there is direct current (DC) electric current when static state, cause circuit to leak electricity (leakage current).
General in order to overcome this problem, can by increasing input stage transistor width (width) to promote the dynamic current of input stage transistor, or transistor (i.e. third transistor M3 and the 4th transistor M4) passage length (channel length) increasing latch circuit reduces the ability of latch circuit, but the former not only increases power consumption and layout area can be made to become large and promote circuit cost, the latter is N-type metal-oxide half field effect transistor (N type Metal-Oxide-Semiconductor Field-Effect Transistor for input stage transistor, be abbreviated as N-MOSFET), output signal OUT can be increased, the rise time (rising time) of reversed-phase output signal OUTB, be for P type metal-oxide half field effect transistor (P-MOSFET) (as shown in Figure 2) for input stage transistor, output signal OUT can be increased, the fall time (falling time) of reversed-phase output signal OUTB, the transition time is caused to increase.
Summary of the invention
The object of the present invention is to provide a kind of voltage quasi position change-over circuit that can reduce circuit area, save cost and power consumption.
Voltage quasi position change-over circuit of the present invention, comprises: first output, second output, a first transistor, transistor seconds, a third transistor, and the 4th transistor.
This first output and this second output are respectively used to the second output voltage of output first output voltage and and this first output voltage complementation.
This first transistor comprises the second end of the first end of this second output of electrical connection, an an electrical connection first level voltage, and the control end of a reception first input voltage.
This transistor seconds comprises the first end of this first output of electrical connection, the second end of this first level voltage of electrical connection, and the control end of a reception second input voltage, and wherein, this second input voltage is complementary to this first input voltage.
This third transistor comprises first end, second end of the first end of this first transistor of electrical connection, and the control end of this first output of electrical connection.
4th transistor comprises first end, second end of the first end of this transistor seconds of electrical connection, and the control end of this second output of electrical connection.
This voltage quasi position change-over circuit also comprises: the 5th transistor, the 6th transistor, the 7th transistor, and the 8th transistor.
5th transistor comprises the second end of the first end of the second end of this third transistor of electrical connection, an an electrical connection second level voltage, and the control end of this second output of electrical connection.
6th strings of transistors is connected between this second level voltage and this second output, for providing equivalent high resistance.
7th strings of transistors is connected between this second level voltage and this first output, for providing equivalent high resistance.
8th transistor comprises the first end of the second end of electrical connection the 4th transistor, the second end of this second level voltage of electrical connection, and the control end of this first output of electrical connection.
In voltage quasi position change-over circuit of the present invention, 6th transistor comprises: the first end of the second end of this third transistor of electrical connection, the second end of this second level voltage of electrical connection, and one electrical connection a bias input control end, controlled with maintain operate on saturation region.
7th transistor comprises: one electrical connection the 4th transistor the second end first end, one electrical connection this second level voltage the second end, and one electrical connection this bias input control end, controlled with maintain operate on saturation region.
In voltage quasi position change-over circuit of the present invention, this first transistor, this transistor seconds are N-type metal-oxide half field effect transistor; This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are P type metal-oxide half field effect transistor.
In voltage quasi position change-over circuit of the present invention, this first transistor, this transistor seconds are P type metal-oxide half field effect transistor; This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are N-type metal-oxide half field effect transistor.
In voltage quasi position change-over circuit of the present invention, 6th transistor comprises: the first end of this second output of electrical connection, the second end of this second level voltage of electrical connection, and one electrical connection a bias input control end, controlled with maintain operate on saturation region;
7th transistor comprises: one electrical connection this first output first end, one electrical connection this second level voltage the second end, and one electrical connection this bias input control end, controlled with maintain operate on saturation region.
In voltage quasi position change-over circuit of the present invention, 6th transistor comprises: the first end of the second end of this third transistor of electrical connection, the second end of this second level voltage of electrical connection, and one is electrically connected this first output and receives the control end of this first output voltage;
7th transistor comprises: the first end of the second end of electrical connection the 4th transistor, the second end of this second level voltage of electrical connection, and one is electrically connected this second output and receives the control end of this second output voltage.
In voltage quasi position change-over circuit of the present invention, this first transistor, this transistor seconds are N-type metal-oxide half field effect transistor; This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are P type metal-oxide half field effect transistor.
In voltage quasi position change-over circuit of the present invention, this first transistor, this transistor seconds are P type metal-oxide half field effect transistor; This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are N-type metal-oxide half field effect transistor.
In voltage quasi position change-over circuit of the present invention, 6th transistor comprises: the first end of this second output of electrical connection, the second end of this second level voltage of electrical connection, and one is electrically connected this first output and receives the control end of this first output voltage;
7th transistor comprises: the first end of this first output of electrical connection, the second end of this second level voltage of electrical connection, and one is electrically connected this second output and receives the control end of this second output voltage.
Beneficial effect of the present invention is: provide equivalent high resistance by the 6th transistor and the 7th transistor, when the pressure reduction of this first input voltage and this second input voltage be in comparatively low level time, circuit still can normally transition, collocation arranges the 5th transistor and the 8th transistor again, the rise and fall time of this first output voltage and this second output voltage can be shortened, there is the effect reducing circuit area, save cost and power consumption.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of existing a kind of voltage quasi position change-over circuit;
Fig. 2 is the circuit diagram of another form of this voltage quasi position change-over circuit existing;
Fig. 3 is the circuit diagram of first preferred embodiment of voltage quasi position change-over circuit of the present invention;
Fig. 4 is another form of this first preferred embodiment;
Fig. 5 is the 3rd form of this first preferred embodiment;
Fig. 6 is the circuit diagram of second preferred embodiment of voltage quasi position change-over circuit of the present invention;
Fig. 7 is another form of this second preferred embodiment; And
Fig. 8 is the 3rd form of this second preferred embodiment.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail:
Consult Fig. 3, first preferred embodiment of voltage quasi position change-over circuit of the present invention comprises a first output OUT and the second output OUTB, the first transistor M1, transistor seconds M2, third transistor M3, the 4th transistor M4, the 5th transistor M5, a 6th transistor M6, the 7th transistor M7, a 8th transistor M8, and a bias input Vbias.
This first output OUT and this second output OUTB is respectively used to the second output voltage of output first output voltage and and this first output voltage complementation.
This first transistor M1 comprises second end of the first end of this second output of electrical connection OUTB, an an electrical connection first level voltage V1, and the control end of a reception first input voltage VIN.
This transistor seconds M2 comprises the first end of this first output of electrical connection OUT, second end of this first level voltage of electrical connection V1, and the control end of an a reception second input voltage VIN B, wherein, this second input voltage VIN B is complementary to this first input voltage VIN, and its voltage level difference is poor lower than the voltage level between this first output voltage and this second output voltage.
This third transistor M3 comprises first end and the first end of this second output OUTB, second end of this first transistor of electrical connection M1, and the control end of this first output of electrical connection OUT.
4th transistor M4 comprises first end and the first end of this first output OUT, second end of this transistor seconds of electrical connection M2, and the control end of this second output of electrical connection OUTB.
5th transistor M5 comprises second end of the first end of second end of this third transistor M3 of electrical connection, an an electrical connection second level voltage V2, and the control end of this second output of electrical connection OUTB.
6th transistor M6 is serially connected with between this second level voltage V2 and this second output OUTB, for providing equivalent high resistance, 6th transistor M6 comprises: the first end of second end of this third transistor M3 of electrical connection, second end of this second level voltage of electrical connection V2, and one electrical connection a bias input Vbias control end, controlled with maintain operate on saturation region (Saturation region).
7th transistor M7 is serially connected with between this second level voltage V2 and this first output OUT, for providing equivalent high resistance, 7th transistor M7 comprises: the first end of second end of electrical connection a 4th transistor M4, second end of this second level voltage of electrical connection V2, and the control end of electrical connection this bias input Vbias, controlledly operate on saturation region to maintain.
8th transistor M8 comprises the first end of second end of electrical connection a 4th transistor M4, second end of this second level voltage of electrical connection V2, and the control end of this first output of electrical connection OUT.
In the present embodiment, this the first transistor M1, this transistor seconds M2 are N-type metal-oxide half field effect transistor (N type Metal-Oxide-Semiconductor Field-Effect Transistor, be abbreviated as N-MOSFET), this third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6, the 7th transistor M7, the 8th transistor M8 are P type metal-oxide half field effect transistor (P-MOSFET), and this second level voltage V2 is higher than this first level voltage V1, but be not limited thereto.
During general use, the control end of this first transistor M1 and this transistor seconds M2 receives this first input voltage VIN and this second input voltage VIN B respectively, again via accurate poor this higher first output voltage of this first output OUT and this second output OUTB output voltage position and this second output voltage, due to voltage quasi position change-over circuit voltage quasi position transition operation mode for this reason industry the content be familiar with, be not repeated herein.
Wherein, this the first transistor M1 and this transistor seconds M2 is that input difference is to (differential input pair), this third transistor M3 and the 4th transistor M4 then forms a positive feedback (positive feedback) mechanism, can be considered a latch circuit (latch circuit), or be called cross-coupled pair (cross-coupled pair).
(i.e. this first input voltage VIN during circuit transition, this second input voltage VIN B turns high levle voltage by relative low level voltage, or when turning low level voltage by relative high levle voltage), bias voltage is provided to make the 6th transistor M6 and the 7th transistor M7 operate in saturation region by this bias input Vbias, now the 6th transistor M6 and the 7th transistor M7 can be equivalent to one respectively and be serially connected with this second level voltage V2 and third transistor M3, equivalent high resistance (i.e. small-signal equivalent output resistance ro) between the 4th transistor M4, so can weaken the breech lock ability of this third transistor M3 and the 4th transistor M4, this first output voltage and this second output voltage is made to be easier to transition.
When the equivalent resistance of the 6th transistor M6 and the 7th transistor M7 is higher, the breech lock ability of this third transistor M3 and the 4th transistor M4 is just more weakened, therefore this first transistor M1 and this transistor seconds M2 does not need to provide larger dynamic current, can make this first output voltage and this second output voltage transition easily.
But the breech lock ability of this third transistor M3 and the 4th transistor M4 is more weak, the rise time (rising time) of this first output voltage and this second output voltage will be caused to increase, therefore the 5th transistor M5 and the 8th transistor M8 is set to shorten the rise time of this first output voltage and this second output voltage.
During circuit transition, when the first input voltage VIN turns high levle voltage (now this second input voltage VIN B turns low level voltage by relative high levle voltage) by relative low level voltage, when this first transistor M1 is conducting state, the rise time of this first output voltage can be accelerated by the path of the 8th transistor M8; When the first input voltage VIN turns low level voltage (now this second input voltage VIN B turns high levle voltage by relative low level voltage) by relative high levle voltage, when this transistor seconds M2 is conducting state, the rise time of this second output voltage then can be accelerated by the path of the 5th transistor M5.
Via above explanation, the advantage of the present embodiment can be summarized as follows:
By arranging the 6th transistor M6 and the 7th transistor M7 using as being serially connected with this second level voltage V2 and third transistor M3, equivalent high resistance between the 4th transistor M4, the breech lock ability of this third transistor M3 and the 4th transistor M4 can be weakened, this first output voltage and this second output voltage is made to be easier to transition, collocation arranges the 5th transistor M5 and the 8th transistor M8 to provide guiding path again, the rise time of this first output voltage and this second output voltage can be shortened, even if so when critical voltage (threshold voltage) close to this first transistor M1 and this transistor seconds M2 of the voltage quasi position of this first input voltage VIN and this second input voltage VIN B, this first output voltage and this second output voltage still can transitions smoothly.
When the pressure reduction (│ VIN-VINB │) of this first input voltage VIN and this second input voltage VIN B be in comparatively low level time, compared to existing voltage quasi position change-over circuit, the present embodiment is under identical transition time demand, layout (layout) area can be reduced and do not need to consume more dynamic current, therefore be suitable for being applied in liquid crystal display (Liquid Crystal Display, be abbreviated as LCD) drive circuit in, significantly can reduce chip area, save cost and power consumption.
Consult Fig. 4, be another form of this first preferred embodiment, the difference of this form and this first preferred embodiment is:
This first transistor M1, this transistor seconds M2 are P type metal-oxide half field effect transistor, this third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6, the 7th transistor M7, the 8th transistor M8 are N-type metal-oxide half field effect transistor, and this first level voltage V1 is higher than this second level voltage V2.
Wherein, this first transistor M1 and this transistor seconds M2 is input difference pair, and this third transistor M3 and the 4th transistor M4 then forms a positive feedback mechanism, can be considered as a latch circuit.
During circuit transition, the bias voltage that this bias input Vbias provides can make the 6th transistor M6 and the 7th transistor M7 operate in saturation region, to weaken the breech lock ability of this third transistor M3 and the 4th transistor M4, this first output voltage and this second output voltage is made to be easier to transition, the 5th transistor M5 and the 8th transistor M8 that arranges in pairs or groups again provides guiding path, the fall time (falling time) of this first output voltage and this second output voltage can be shortened, because circuit theory is similar to above-mentioned, so in this no longer superfluous words.
So, this form also can reach the object identical with above-mentioned first preferred embodiment and effect.
Consult Fig. 5, be the 3rd form of this first preferred embodiment, the difference of this form and this first preferred embodiment is:
6th transistor M6 comprises: the first end of electrical connection this second output OUTB, second end of this second level voltage of electrical connection V2, and the control end of an electrical connection bias input Vbias, controlledly operates on saturation region to maintain.
7th transistor M7 comprises: the first end of electrical connection this first output OUT, second end of this second level voltage of electrical connection V2, and the control end of this bias input of electrical connection Vbias, controlledly operates on saturation region to maintain.
This form also can reach the object identical with above-mentioned first preferred embodiment and effect, because circuit theory is similar to above-mentioned, in this no longer superfluous words.
Consult Fig. 6, be second preferred embodiment of voltage quasi position change-over circuit of the present invention, this second preferred embodiment is similar to this first preferred embodiment, and the difference of this second preferred embodiment and this first preferred embodiment is:
6th transistor M6 comprises: the first end of second end of this third transistor M3 of electrical connection, second end of this second level voltage of electrical connection V2, and one is electrically connected this first output OUT and receives the control end of this first output voltage.
7th transistor M7 comprises: the first end of second end of electrical connection a 4th transistor M4, second end of this second level voltage of electrical connection V2, and one is electrically connected this second output OUTB and receives the control end of this second output voltage.
In the present embodiment, this the first transistor M1, this transistor seconds M2 are N-type metal-oxide half field effect transistor, this third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6, the 7th transistor M7, the 8th transistor M8 are P type metal-oxide half field effect transistor, and this second level voltage V2 is higher than this first level voltage V1, but be not limited thereto.
This first transistor M1 and this transistor seconds M2 is input difference pair, and this third transistor M3 and the 4th transistor M4 then forms a positive feedback mechanism, can be considered a latch circuit.
During circuit transition, this first output voltage and this second output voltage can make the 6th transistor M6 and the 7th transistor M7 operate in triode district (triode region), now the 6th transistor M6 and the 7th transistor M7 can be equivalent to one respectively and be serially connected with this second level voltage V2 and third transistor M3, linear resistance (the linear resistance Ron namely between transistor drain end and source terminal between the 4th transistor M4, but the resistance performance in triode district slightly can be inferior to the resistance performance of saturation region), the breech lock ability that can weaken this third transistor M3 and the 4th transistor M4 like this, this first output voltage and this second output voltage is made to be easier to transition, and the dynamic current provided needed for this first transistor M1 and this transistor seconds M2 can be provided.
Collocation arranges the 5th transistor M5 and the 8th transistor M8 to provide guiding path, can shorten the rise time of this first output voltage and this second output voltage, because circuit theory is similar to above-mentioned, so in this no longer superfluous words.
So, this second preferred embodiment also can reach the object identical with above-mentioned first preferred embodiment and effect.
Consult Fig. 7, be another form of this second preferred embodiment, the difference of this form and this second preferred embodiment is:
This first transistor M1, this transistor seconds M2 are P type metal-oxide half field effect transistor, this third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6, the 7th transistor M7, the 8th transistor M8 are N-type metal-oxide half field effect transistor, and this first level voltage V1 is higher than this second level voltage V2, but be not limited thereto.
Wherein, this first transistor M1 and this transistor seconds M2 is input difference pair, and this third transistor M3 and the 4th transistor M4 forms a positive feedback mechanism, can be considered as a latch circuit.
During circuit transition, this first output voltage and this second output voltage can make the 6th transistor M6 and the 7th transistor M7 operate in triode district to be serially connected with this second level voltage V2 and third transistor M3 as being equivalent to one, linear resistance between the 4th transistor M4, the breech lock ability that can weaken this third transistor M3 and the 4th transistor M4 like this, this first output voltage and this second output voltage is made to be easier to transition, the 5th transistor M5 and the 8th transistor M8 that arranges in pairs or groups again provides guiding path, the fall time of this first output voltage and this second output voltage can be shortened, because circuit theory is similar to above-mentioned, so in this no longer superfluous words.
So, this form also can reach the object identical with above-mentioned first preferred embodiment and effect.
Consult Fig. 8, be the 3rd form of this second preferred embodiment, the difference of this form and this second preferred embodiment is:
6th transistor M6 comprises: the first end of this second output of electrical connection OUTB, second end of this second level voltage of electrical connection V2, and one is electrically connected this first output OUT and receives the control end of this first output voltage.
7th transistor M7 comprises: the first end of this first output of electrical connection OUT, second end of this second level voltage of electrical connection V2, and one is electrically connected this second output OUTB and receives the control end of this second output voltage.
This form also can reach the object identical with above-mentioned second preferred embodiment and effect, because circuit theory is similar to above-mentioned, in this no longer superfluous words.
In sum, the present invention can reduce circuit area, save cost and power consumption, so really can reach object of the present invention.
Below only add with regard to concrete constructed embodiment of the present invention and give explanation, under nothing disobeys structure of the present invention and spirit, allly be skillful in those skilled in the art scholar, still can do all changes and modification, this changes all are still considered as being encompassed within the scope of this case following claims with modifying.
Claims (9)
1. a voltage quasi position change-over circuit, comprises: first output, second output, a first transistor, transistor seconds, a third transistor, and the 4th transistor;
This first output and this second output are respectively used to the second output voltage of output first output voltage and and this first output voltage complementation;
This first transistor comprises the second end of the first end of this second output of electrical connection, an an electrical connection first level voltage, and the control end of a reception first input voltage;
This transistor seconds comprises the first end of this first output of electrical connection, the second end of this first level voltage of electrical connection, and the control end of a reception second input voltage, and wherein, this second input voltage is complementary to this first input voltage;
This third transistor comprises first end, second end of the first end of this first transistor of electrical connection, and the control end of this first output of electrical connection;
4th transistor comprises first end, second end of the first end of this transistor seconds of electrical connection, and the control end of this second output of electrical connection;
It is characterized in that:
This voltage quasi position change-over circuit also comprises: the 5th transistor, the 6th transistor, the 7th transistor, and the 8th transistor;
5th transistor comprises the second end of the first end of the second end of this third transistor of electrical connection, an an electrical connection second level voltage, and the control end of this second output of electrical connection;
6th strings of transistors is connected between this second level voltage and this second output, for providing equivalent high resistance;
7th strings of transistors is connected between this second level voltage and this first output, for providing equivalent high resistance;
8th transistor comprises the first end of the second end of electrical connection the 4th transistor, the second end of this second level voltage of electrical connection, and the control end of this first output of electrical connection.
2. voltage quasi position change-over circuit as claimed in claim 1, is characterized in that:
6th transistor comprises: one electrical connection this third transistor the second end first end, one electrical connection this second level voltage the second end, and one electrical connection a bias input control end, controlled with maintain operate on saturation region;
7th transistor comprises: one electrical connection the 4th transistor the second end first end, one electrical connection this second level voltage the second end, and one electrical connection this bias input control end, controlled with maintain operate on saturation region.
3. voltage quasi position change-over circuit as claimed in claim 2, is characterized in that:
This first transistor, this transistor seconds are N-type metal-oxide half field effect transistor;
This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are P type metal-oxide half field effect transistor.
4. voltage quasi position change-over circuit as claimed in claim 2, is characterized in that:
This first transistor, this transistor seconds are P type metal-oxide half field effect transistor;
This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are N-type metal-oxide half field effect transistor.
5. voltage quasi position change-over circuit as claimed in claim 1, is characterized in that:
6th transistor comprises: one electrical connection this second output first end, one electrical connection this second level voltage the second end, and one electrical connection a bias input control end, controlled with maintain operate on saturation region;
7th transistor comprises: one electrical connection this first output first end, one electrical connection this second level voltage the second end, and one electrical connection this bias input control end, controlled with maintain operate on saturation region.
6. voltage quasi position change-over circuit as claimed in claim 1, is characterized in that:
6th transistor comprises: the first end of the second end of this third transistor of electrical connection, the second end of this second level voltage of electrical connection, and one is electrically connected this first output and receives the control end of this first output voltage;
7th transistor comprises: the first end of the second end of electrical connection the 4th transistor, the second end of this second level voltage of electrical connection, and one is electrically connected this second output and receives the control end of this second output voltage.
7. voltage quasi position change-over circuit as claimed in claim 6, is characterized in that:
This first transistor, this transistor seconds are N-type metal-oxide half field effect transistor;
This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are P type metal-oxide half field effect transistor.
8. voltage quasi position change-over circuit as claimed in claim 6, is characterized in that:
This first transistor, this transistor seconds are P type metal-oxide half field effect transistor;
This third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor are N-type metal-oxide half field effect transistor.
9. voltage quasi position change-over circuit as claimed in claim 1, is characterized in that:
6th transistor comprises: the first end of this second output of electrical connection, the second end of this second level voltage of electrical connection, and one is electrically connected this first output and receives the control end of this first output voltage;
7th transistor comprises: the first end of this first output of electrical connection, the second end of this second level voltage of electrical connection, and one is electrically connected this second output and receives the control end of this second output voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102127102A TW201505373A (en) | 2013-07-29 | 2013-07-29 | Voltage level conversion circuit |
| TW102127102 | 2013-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104348472A true CN104348472A (en) | 2015-02-11 |
Family
ID=52503421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410234318.6A Pending CN104348472A (en) | 2013-07-29 | 2014-05-29 | Voltage level converting circuit |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104348472A (en) |
| TW (1) | TW201505373A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671985B (en) * | 2018-01-10 | 2019-09-11 | 力旺電子股份有限公司 | High voltage driver |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1642009A (en) * | 2004-01-12 | 2005-07-20 | 凌阳科技股份有限公司 | Voltage transfer circuit |
| CN101630955A (en) * | 2009-06-09 | 2010-01-20 | 中国人民解放军国防科学技术大学 | High-performance level switch circuit with accelerating tube |
| CN101667824A (en) * | 2008-09-03 | 2010-03-10 | 奕力科技股份有限公司 | Voltage level converting circuit |
| CN101686047A (en) * | 2008-09-24 | 2010-03-31 | 奕力科技股份有限公司 | Level switching circuit |
| US20110304310A1 (en) * | 2010-06-09 | 2011-12-15 | Sony Corporation | Multivibrator circuit and voltage converting circuit |
-
2013
- 2013-07-29 TW TW102127102A patent/TW201505373A/en unknown
-
2014
- 2014-05-29 CN CN201410234318.6A patent/CN104348472A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1642009A (en) * | 2004-01-12 | 2005-07-20 | 凌阳科技股份有限公司 | Voltage transfer circuit |
| CN101667824A (en) * | 2008-09-03 | 2010-03-10 | 奕力科技股份有限公司 | Voltage level converting circuit |
| CN101686047A (en) * | 2008-09-24 | 2010-03-31 | 奕力科技股份有限公司 | Level switching circuit |
| CN101630955A (en) * | 2009-06-09 | 2010-01-20 | 中国人民解放军国防科学技术大学 | High-performance level switch circuit with accelerating tube |
| US20110304310A1 (en) * | 2010-06-09 | 2011-12-15 | Sony Corporation | Multivibrator circuit and voltage converting circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671985B (en) * | 2018-01-10 | 2019-09-11 | 力旺電子股份有限公司 | High voltage driver |
| US10505521B2 (en) | 2018-01-10 | 2019-12-10 | Ememory Technology Inc. | High voltage driver capable of preventing high voltage stress on transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201505373A (en) | 2015-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10855280B2 (en) | Input/output circuit and method | |
| US7205819B2 (en) | Zero-bias-power level shifting | |
| CN101442307B (en) | Level shifter | |
| US8354873B2 (en) | Transmission gate and semiconductor device | |
| CN103856205B (en) | Level shifting circuit, for driving the drive circuit of high tension apparatus and corresponding method | |
| US20050174158A1 (en) | Bidirectional level shifter | |
| CN102291103B (en) | Dynamic body biasing class-C inverter and application thereof | |
| CN101888178B (en) | Charge pump circuit used for reducing current mismatch at extra-low voltage in phase-locked loop | |
| US20160105163A1 (en) | Low-voltage to high-voltage level shifter circuit | |
| US8829964B1 (en) | Compensated hysteresis circuit | |
| CN102769447A (en) | Fully-differential high-speed low-power-consumption comparator | |
| US8525572B2 (en) | Level-up shifter circuit | |
| CN108199701B (en) | High-speed CMOS transmission gate switch circuit | |
| CN107370485B (en) | Negative voltage level conversion circuit | |
| CN204013481U (en) | Realize the circuit structure that low-voltage crystal oscillator drives | |
| CN109417606B (en) | Level converter capable of outputting positive and negative voltages | |
| CN104348472A (en) | Voltage level converting circuit | |
| KR20120063176A (en) | Low power latch device using threshold voltage scaling or using a stack structure of transistors | |
| CN214504253U (en) | Level conversion circuit with low input power supply amplitude | |
| Lai et al. | A novel low delay high-voltage level shifter with transient performance insensitive to parasitic capacitance and transfer voltage level | |
| US9537469B2 (en) | CMOS level shifter with reduced high voltage transistor count | |
| CN201323568Y (en) | Process compensating voltage-current converter | |
| CN114629489B (en) | Level conversion circuit and electronic equipment with multiple voltage domains | |
| CN115632651B (en) | Level conversion circuit without quiescent current | |
| CN110855285B (en) | High frequency level shifter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150211 |
|
| WD01 | Invention patent application deemed withdrawn after publication |