CN104332823A - Method for improving beam quality of wide strip type high-power semiconductor laser - Google Patents
Method for improving beam quality of wide strip type high-power semiconductor laser Download PDFInfo
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- CN104332823A CN104332823A CN201410674400.0A CN201410674400A CN104332823A CN 104332823 A CN104332823 A CN 104332823A CN 201410674400 A CN201410674400 A CN 201410674400A CN 104332823 A CN104332823 A CN 104332823A
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- power semiconductor
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- wide strip
- laser
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Abstract
The invention discloses a method for improving beam quality of a wide strip type high-power semiconductor laser, belonging to the technical field of laser. Application of wide strip type high-power semiconductor laser is greatly limited as the known technology in the field is difficult to effectively improve the beam quality of the wide strip type high-power semiconductor laser. As a method of applying tensile stress in convex strength distribution to the wide strip type waveguide region is adopted, convex refractive index distribution caused by convex temperature distribution in a waveguide region is weakened, thermal lens effect of the laser waveguide is suppressed, and the beam quality of the wide strip type high-power semiconductor laser is accordingly improved. The method can be applied to manufacturing of various wide strip type high-power semiconductor lasers.
Description
Technical field
The present invention relates to a kind of method improving wide bar shaped high power semiconductor lasers beam quality, belong to laser technology field.
Background technology
Wide bar shaped high power semiconductor lasers has that power output is high, heat management is simple, the simple advantage of power combing.Usual wide bar shaped high power semiconductor lasers flip-chip is welded in the transition heat sink of high heat conduction, because larger operating current concentrates in light-emitting waveguide district, the used heat that charge carrier non-radiative recombination produces causes the Temperature Distribution of waveguide section to be convex distribution, make the effective refractive index in light-emitting waveguide district also present a convex distribution, add unsteadiness and the beam divergence angle of waveguiding structure during laser works.Usually mainly through improving the epitaxial growth quality of laser material, reducing the defect in light-emitting waveguide district, suppress the refractive index convex distribution because used heat causes, be subject to the restriction of laser structure epitaxial growth source material and atmosphere purity, still exist certain fault in material cause wide bar shaped high power semiconductor lasers big current condition of work under beam quality be obviously deteriorated.
Summary of the invention
The present invention realizes like this, see shown in accompanying drawing 1, chip of laser (forming primarily of chip substrate 1, light-emitting waveguide district 2, current-limiting layer 3) is welded in laser transition heat sink 4 by solder 6, pressure is applied in the middle part of chip of laser by introducing in be welded cushion block 5 and the process that is welded in solder side both sides, bend because solder solidification makes the chip of laser after being welded produce, and introduce the Zhang Yinli distribution of convex in light-emitting waveguide district 1.
Technique effect of the present invention is, the Zhang Yinli distribution introducing convex in light-emitting waveguide district 1 causes the refraction index profile of the additional spill of effective refractive index distribution of waveguide, due to useless thermogenetic convex refractive rate distribution when inhibit laser works, thus reduce the beam divergence angle of laser high-power operation, improve beam quality.
Accompanying drawing explanation
Appended Fig. 1 is the wide bar shaped high power semiconductor lasers structural representation introducing tensile stress, and 1 is light-emitting waveguide district, and 2 is chip substrate, and 3 is current-limiting layer, and 4 is laser transition heat sink, and 5 is the cushion block that is welded, and 6 is solder.
Embodiment
As shown in Figure 1, by chip of laser (primarily of light-emitting waveguide district 1, chip substrate 2, current-limiting layer 3 forms) be welded in laser transition heat sink 4 by solder 6, pressure is applied in the middle part of chip of laser by introducing in be welded cushion block 5 and the process that is welded in solder side both sides, bend because solder solidification makes the chip of laser after being welded produce, and the Zhang Yinli distribution of convex is introduced in light-emitting waveguide district 1, due to useless thermogenetic convex refractive rate distribution during suppression laser works, thus reduce the beam divergence angle of laser high-power operation, improve beam quality.
Below in conjunction with example, the present invention is described, the 808nm wavelength quantum well structure chip of laser that chip of laser adopts 2 millimeters of chambeies long, the width in light-emitting waveguide district 1 is 100 microns, chip substrate 2 is the N-GaAs material of 110 micron thickness, current-limiting layer 3 is the SiO2 insulating barrier of 120 nanometer thickness, the Ti/Pt/Au that laser transition heat sink 4 is 0.5 millimeter for thickness covers AlN substrate, the height of cushion block 5 of being welded is 25 microns, solder 6 is AuSn solder, is applied the pressure of 50 grams in the process that is welded by pressing in the middle part of chip of laser.The temperature that is welded is 320 degree, and the atmosphere that is welded is the nitrogen of 99.999% purity, completes chip of laser to be welded process when temperature is reduced to below 50 degree.Measured by far-field divergence angle during laser works, show that the laser remote field angle of divergence obviously reduces, be reduced to 5.0 degree by common 7.5 degree.
Claims (1)
1. one kind is improved the method for wide bar shaped high power semiconductor lasers beam quality, it is characterized in that, by the tensile stress applying convex intensity distributions to the light-emitting waveguide district (1) of wide bar shaped high power semiconductor lasers chip, weaken the convex refractive rate distribution because waveguide section convex Temperature Distribution causes, suppress the thermal lensing effect of laser waveguide, thus improve the beam quality of wide bar shaped high power semiconductor lasers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674400.0A CN104332823B (en) | 2014-11-20 | 2014-11-20 | It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674400.0A CN104332823B (en) | 2014-11-20 | 2014-11-20 | It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104332823A true CN104332823A (en) | 2015-02-04 |
| CN104332823B CN104332823B (en) | 2017-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410674400.0A Expired - Fee Related CN104332823B (en) | 2014-11-20 | 2014-11-20 | It is a kind of to improve the method for wide bar shaped high power semiconductor lasers beam quality |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017081010A1 (en) * | 2015-11-09 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Semiconductor laser diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001127360A (en) * | 1999-10-29 | 2001-05-11 | Nec Corp | Solid laser oscillator |
| JP2004128298A (en) * | 2002-10-04 | 2004-04-22 | Sony Corp | Semiconductor laser element and its manufacturing method |
| US20070223549A1 (en) * | 2006-03-23 | 2007-09-27 | Nl Nanosemiconductor Gmbh | High-Power Optoelectronic Device with Improved Beam Quality Incorporating A Lateral Mode Filtering Section |
| US20080037597A1 (en) * | 2004-02-23 | 2008-02-14 | Michael Mason | Laser Apparatus |
| CN103219645A (en) * | 2013-04-02 | 2013-07-24 | 深圳市大族激光科技股份有限公司 | Cooling device and laser device for flake laser device gain medium |
-
2014
- 2014-11-20 CN CN201410674400.0A patent/CN104332823B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001127360A (en) * | 1999-10-29 | 2001-05-11 | Nec Corp | Solid laser oscillator |
| JP2004128298A (en) * | 2002-10-04 | 2004-04-22 | Sony Corp | Semiconductor laser element and its manufacturing method |
| US20080037597A1 (en) * | 2004-02-23 | 2008-02-14 | Michael Mason | Laser Apparatus |
| US20070223549A1 (en) * | 2006-03-23 | 2007-09-27 | Nl Nanosemiconductor Gmbh | High-Power Optoelectronic Device with Improved Beam Quality Incorporating A Lateral Mode Filtering Section |
| CN103219645A (en) * | 2013-04-02 | 2013-07-24 | 深圳市大族激光科技股份有限公司 | Cooling device and laser device for flake laser device gain medium |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017081010A1 (en) * | 2015-11-09 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Semiconductor laser diode |
| US10424898B2 (en) | 2015-11-09 | 2019-09-24 | Osram Opto Semiconductors Gmbh | Semiconductor laser diode |
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| Publication number | Publication date |
|---|---|
| CN104332823B (en) | 2017-08-11 |
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