CN104326646A - Titanium-doped quartz glass and preparation method and preparation device of quartz glass - Google Patents

Titanium-doped quartz glass and preparation method and preparation device of quartz glass Download PDF

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Publication number
CN104326646A
CN104326646A CN201410571933.6A CN201410571933A CN104326646A CN 104326646 A CN104326646 A CN 104326646A CN 201410571933 A CN201410571933 A CN 201410571933A CN 104326646 A CN104326646 A CN 104326646A
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burner
preparation
titanium
silica glass
silicon
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CN201410571933.6A
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CN104326646B (en
Inventor
邵竹锋
饶传东
向在奎
符博
聂兰舰
王宏杰
王慧
王蕾
刘飞翔
王玉芬
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China Building Materials Academy CBMA
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • C03B19/1423—Reactant deposition burners
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/40—Gas-phase processes
    • C03C2203/42—Gas-phase processes using silicon halides as starting materials
    • C03C2203/44—Gas-phase processes using silicon halides as starting materials chlorine containing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)

Abstract

The invention discloses titanium-doped quartz glass and a preparation method and a preparation device of the quartz glass. The preparation method comprises the steps of placing a silicone-containing raw material and a titanium-containing raw material into a burner using oxy-hydrogen flames as a reaction energy source, preparing a low-expansion quartz glass stone by a vertical chemical vapor deposition method, placing the quartz glass stone into a high-temperature homogenizing furnace for homogenization treatment, and then preparing the titanium-doped quartz glass through cold processing. The preparation device is characterized in that a silicon tetrachloride control system and a titanium tetrachloride control system are connected with a mixing bottle respectively, a hydrogen gas control system and an oxygen gas control system of the mixing bottle are connected with the burner respectively, the burner is located in the chamber of a combustion furnace, a tray is arranged at one end of a base rod and is positioned in the chamber of the combustion furnace, the other end of the base rod is connected with a rotating mechanism which is connected with a lifting system, and the chamber of the combustion furnace is connected with a chimney. According to the preparation method and the preparation device, the doping quantity can be accurately controlled and the quartz glass expansion factor of the quartz glass can be accurately controlled.

Description

Silica glass of Doped with Titanium and preparation method thereof, preparation facilities
Technical field
The present invention relates to the low-expansion silica glass of a kind of large size, particularly relate to silica glass of a kind of Doped with Titanium and preparation method thereof, preparation facilities.
Background technology
In recent years, due to the specific demand of different field, the moiety of silica glass is also constantly changing.Adulterate different types of rare earth or metallic element in the basic moiety silicon-dioxide of silica glass, can change the characteristic of silica glass in the coefficient of expansion, intensity, stability, transmittance, resistance to irradiation etc.Require that in aerospace and astronomical field reflective optical devices had both had very high weight reduction rate, there is again extremely low thermal expansivity to ensure that optical element can keep its surface figure accuracy when temperature fluctuation.Large size low-expansion quartz glass had both had good weldability energy, can make cellular lightweight structure, had again extremely low thermal expansivity simultaneously, and very high resistance to deformation intensity, was the perfect optics material in reflective optics field.
At present, the preparation technology of domestic large size silica glass has four kinds, but the silica glass coefficient of expansion prepared by these techniques is 10 -7m/ DEG C, can burst phenomenon, and thermal stability is poor after lightweight welding.
Summary of the invention
In order to solve the problem of prior art, embodiments providing one and realizing uniform doping, the preparation method of the silica glass of the Doped with Titanium that doping is controlled.
To achieve these goals, the technical scheme that the present invention takes is:
A preparation method for the silica glass of Doped with Titanium, comprises the following steps:
Silicon-containing material and titaniferous materials being put into oxyhydrogen flame is the burner reacting the energy, vertical chemical Vapor deposition process is adopted to prepare low-expansion quartz glass stone roller, silica glass stone roller is loaded homogenizing process in high temperature homogenizing furnace, then prepares the silica glass of Doped with Titanium through cold working.
Further, specifically comprise the following steps:
(1) in burner, pass into hydrogen and oxygen, combustion reactions forms redox reaction atmosphere;
(2) by silicon-containing material and titaniferous materials vaporization under Material control respectively, after uniform mixing device, send in burner and react under the drive of material containing gas, the quality controlling titaniferous materials is 3% ~ 10% of silicon-containing material quality; The SiO generated after reaction 2and TiO 2particle deposition is on the pallet in roasting kiln, and under the high temperature of 1300 ~ 2000 DEG C, successively sintering forms low-expansion coefficient silica glass stone roller; Pallet under the rotation of basic rod, descending at slow speed, silica glass stone roller grow up gradually;
(3) silica glass is cut or polish jade with an emery wheel through homogenizing and follow-up cold working, the final silica glass forming Doped with Titanium.
Described silicon-containing material is silicon tetrachloride, and/or described titaniferous materials is titanium tetrachloride.
The speed of described deposition is 100 ~ 500 Grams Per Hours.
In described high temperature homogenizing furnace, heat-up rate is 200 ~ 700 DEG C/h, and top temperature is 1700 ~ 1900 DEG C; Described high temperature homogenizing furnace is closed structure, and keep vacuum or insufflation gas in stove during work, described gas is rare gas element or reducing gas.
The flow of described silicon-containing material is 800 ~ 1500g/h, and the flow of described silicon-containing material is 24 ~ 150g/h.
The present invention also provides a kind of silica glass of Doped with Titanium, prepares according to above-mentioned preparation method.
The present invention provides again a kind of preparation facilities of silica glass of Doped with Titanium, comprise hydrogen control system, oxygen control system, silicon tetrachloride Controlling System, titanium tetrachloride Controlling System and basic rod, described silicon tetrachloride Controlling System is connected mixing bottle respectively with titanium tetrachloride Controlling System, described mixing bottle connects burner, described hydrogen control system is connected burner respectively with oxygen control system, described burner is positioned at the burner hearth of roasting kiln, described basic rod one end is provided with pallet, described pallet is positioned at described burner hearth, described basic rod the other end connection traversing mechanism, described rotating mechanism connects jacking system, described burner hearth connects chimney.
Described burner is multilayer parcel tubular structure, and the material of described burner is high temperature material.
Described roasting kiln is vertical shaft furnace, and described burner is positioned over the position at more than the middle part of burner hearth, and the burner port of described burner faces toward the position of burner hearth inner pallet.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention's a certain amount of titanium dioxide that adulterates in silica glass obviously can reduce the coefficient of expansion of silica glass, and adopt vertical chemical Vapor deposition process titanium dioxide evenly can be mixed in quartz glass substrate, and can controlled doping quantity accurately, therefore, it is possible to accurately control the coefficient of expansion of silica glass.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the preparation facilities of the silica glass of Doped with Titanium provided by the invention.
In figure: 1 hydrogen control system, 2 oxygen control systems, 3 silicon tetrachloride Controlling System, 4 titanium tetrachloride Controlling System, 5 mixing bottles, 6 burners, 7 burner hearths, 8 low-expansion quartz glass stone rollers, 9 chimneys, 10 jacking systems, 11 basic rods, 12 rotating mechanisms.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
See Fig. 1, a kind of preparation facilities of silica glass of Doped with Titanium, comprise hydrogen control system 1, oxygen control system 2, silicon tetrachloride Controlling System 3, titanium tetrachloride Controlling System 4 and basic rod 11, silicon tetrachloride Controlling System 3 is connected mixing bottle 5 respectively with titanium tetrachloride Controlling System 4, mixing bottle 5 connects burner 6, hydrogen control system 1 is connected burner 6 respectively with oxygen control system 2, burner 6 is positioned at the burner hearth 7 of roasting kiln, preferably, burner 6 is positioned over the position at more than the middle part of burner hearth 7, the burner port of burner 6 faces toward the position of burner hearth 7 inner pallet 13, basic rod 11 one end is provided with pallet 13, pallet 13 is positioned at burner hearth 7, basic rod 11 the other end connection traversing mechanism 12, rotating mechanism 12 connects jacking system 10, burner hearth 7 connects chimney 9.
Preferably, burner 6 is multilayer parcel tubular structure, and the material of burner 6 is high temperature material.Preferred silica glass.
Roasting kiln of the present invention is vertical shaft furnace.Be applicable to chemical vapor deposition method.
Adopt device of the present invention, adulterate a certain amount of titanium dioxide in quartz glass substrate, uniform doping, and doping is controlled, silica glass prepared by the present invention is less in the change of larger temperature range thermal expansion, under suitable temp condition, even can realize zero thermal expansion.
The present invention also provides a kind of preparation method of silica glass of Doped with Titanium, comprises the following steps:
Silicon-containing material and titaniferous materials being put into oxyhydrogen flame is the burner reacting the energy, vertical chemical Vapor deposition process is adopted to prepare low-expansion quartz glass stone roller, silica glass stone roller is loaded homogenizing process in high temperature homogenizing furnace, then prepares the silica glass of Doped with Titanium through cold working.
In order to the physicals preventing subsurface defect from affecting final finished, also in order to save production cost, the technique for the preparation of titania-doped silica glass provided by the invention is chemical vapor deposition method.
Further, specifically comprise the following steps:
(1) in burner, pass into hydrogen and oxygen, combustion reactions forms redox reaction atmosphere;
(2) by silicon-containing material and titaniferous materials vaporization under Material control respectively, after uniform mixing device, send in burner and react under the drive of material containing gas, the quality controlling titaniferous materials is 3% ~ 10% of silicon-containing material quality; The SiO generated after reaction 2and TiO 2particle deposition is on the pallet in roasting kiln, and under the high temperature of 1300 ~ 2000 DEG C, successively sintering forms low-expansion coefficient silica glass stone roller; Pallet under the rotation of basic rod, descending at slow speed, silica glass stone roller grow up gradually;
(3) silica glass is cut or polish jade with an emery wheel through homogenizing and follow-up cold working, the final silica glass forming the Doped with Titanium of certain specification.
Described silicon-containing material is silicon tetrachloride, and/or described titaniferous materials is titanium tetrachloride.
The speed of described deposition is 100 ~ 500 Grams Per Hours, preferably 300 Grams Per Hours.
In described high temperature homogenizing furnace, heat-up rate is 200 ~ 700 DEG C/h, preferably 500 DEG C/h, and top temperature is 1700 ~ 1900 DEG C, preferably 1800 DEG C; Described high temperature homogenizing furnace is closed structure, and keep vacuum or insufflation gas in stove during work, described gas is rare gas element or reducing gas.
The flow of described silicon-containing material is 800 ~ 1500g/h, preferably 1200 DEG C, and the flow of described titaniferous materials is 3% ~ 10% of silicon tetrachloride flow, preferably 7%.
Described material containing gas is the one in hydrogen, oxygen, argon gas, or other does not enter the gas of glass structure, and silicon-containing material material containing gas flow is 2-6L/min, and the flow of described silicon-containing material is 24 ~ 150g/h.
The present invention also provides a kind of large size low-expansion coefficient silica glass, i.e. the silica glass of Doped with Titanium, to overcome the high problem of the existing silica glass coefficient of expansion.Prepare according to above-mentioned preparation method, the main component of this silica glass comprises TiO 2and SiO 2, TiO 2mass percentage be SiO 23% ~ 10%, its coefficient of expansion is 10 -8m/ DEG C is even lower.This silica glass can be welded into cellular lightweight structure, can be worked into very high optics planeness, and stability is high in optical system, can not change its surperficial face shape along with the fluctuation of temperature.Its preparation method is mainly raw material with silicon tetrachloride, utilizes chemical vapor deposition method (CVD) to manufacture low-expansion silica glass of Doped with Titanium.Silica glass provided by the invention can realize lower thermal expansion in a relatively wide in range temperature range, even can realize zero thermal expansion under the temperature condition be applicable to.Can be used for the high-tech areas such as aerospace, optics, communication.Large size low-expansion quartz glass of the present invention, its profile can be the shape required arbitrarily, and its maximum diameter can reach 2 meters.Its coefficient of expansion is better than 5 × 10 -7m/ DEG C.
Technological reaction principle of the present invention:
1) hydrogen and oxygen burn in the burner to produce to react with gaseous silicon in burner tremie pipe after water vapor and generate silica micro-particle;
2) hydrogen and oxygen burn in the burner to produce to react with gaseous titanium tetrachloride in burner tremie pipe after water vapour and generate titanium dioxide microparticle;
3) silicon-dioxide and titanium dioxide microparticle are reunited in flame, are grown to serve as larger particle, and move towards depositing base under the drive of flame.
4) silicon-dioxide and titanium dioxide granule arrive fused silica glass matrix and are adsorbed, and issue heat-dissipating migration in the effect of thermal-flame.Meanwhile, the gas molecule be mingled with in particle diffuses to surface, leaves sedimentary province, discharges with air-flow.
Below by specific embodiment, the present invention is described further:
Embodiment 1 (see Fig. 1)
1) silicon tetrachloride Controlling System 3: the high purity silicon tetrachloride stock liquid (purity reaches more than 99.999%) in silicon tetrachloride head tank, (in the present embodiment, high pure nitrogen is adopted via binder gas, purity reaches more than 99.999%) import in silicon tetrachloride vaporization still, boiling point due to silicon tetrachloride stock liquid is 57.6 DEG C, the temperature of vaporization still is adjusted to 40 ~ 50 DEG C in advance, the present embodiment selects 45 DEG C, material containing gas (adopts high-purity argon gas in the present embodiment, purity reaches more than 99.999%, material containing gas flow is 4L/min) flow through moisture eliminator and remove after water vapour and enter in vaporization still, silicon tetrachloride vapor after still is atomization is then carried by material containing gas and enter oxyhydrogen flame burner 6 after mixing bottle 5, the silicon tetrachloride flow carried out is 800 ~ 1500g/h, preferred 1200g/h, be silicon tetrachloride unstripped gas by the mixed gas of the silicon tetrachloride gas after gasifying and material containing gas composition.
2) titanium tetrachloride Controlling System 4: the high-purity titanium tetrachloride stock liquid (purity reaches more than 99.99%) in titanium tetrachloride head tank, (in the present embodiment, high pure nitrogen is adopted via binder gas, purity reaches more than 99.999%, material containing gas flow is 0.2L/min) import in titanium tetrachloride vaporization still, boiling point due to titanium tetrachloride stock liquid is 136.4 DEG C, the temperature of vaporization still is adjusted to 110 ~ 125 DEG C in advance, the present embodiment selects 120 DEG C, material containing gas (adopts high-purity argon gas in the present embodiment, purity reaches more than 99.999%) flow through moisture eliminator and remove after water vapour and enter in vaporization still, titanium tetrachloride vapors after still is atomization is then carried by material containing gas and enter oxyhydrogen flame burner 6 after mixing bottle 5, the titanium tetrachloride flow carried out is the 24-150g/h of silicon tetrachloride flow, the present embodiment selects 90g/h, be titanium tetrachloride unstripped gas by the mixed gas of the titanium tetrachloride gases after gasifying and material containing gas composition.
3) hydrogen (purity reaches more than 99.999%) and oxygen (purity reaches more than 99.999%) burn respectively through passing into oxyhydrogen flame burner 6 after the flow control of hydrogen control system 1 and oxygen control system 2 simultaneously, and hydrogen flowing quantity controls at 300L/min ~ 500L/min and oxygen flux control at 100L/min ~ 200L/min.The present embodiment selects hydrogen flowing quantity 400L/min and oxygen flow 150L/min, when oxyhydrogen flame temperature reaches 800 ~ 1300 DEG C, the present embodiment selects 1000 DEG C, silicon tetrachloride unstripped gas and titanium tetrachloride unstripped gas react simultaneously in burner hearth 7, generate silicon-dioxide and titanium dioxide granule respectively, after high-temperature fusion on the basic rod 11 of mixed deposit in roasting kiln, the speed of deposition is 300 Grams Per Hours, make low-expansion quartz glass stone roller 8 through high temperature sintering again, the waste gas of generation is discharged by the negative pressure of chimney 9.Basic rod 11 rotating speed under the control of rotating mechanism 12 is 200r/min ~ 500r/min, and the present embodiment selects 400r/min, and under the control of descending mechanism 10, reduction of speed is 0.2mm/h ~ 0.5mm/h, and the present embodiment selects 0.4mm/h.
4) after the titania-doped silica glass stone roller 8 of formation of deposits cools 32h, take out by roasting kiln, silica glass stone roller is loaded homogenizing process in high temperature homogenizing furnace, the silica glass original paper of Doped with Titanium is prepared again through cold working, high temperature homogenizing furnace is closed structure, keep vacuum in stove, the heat-up rate of high temperature homogenizing furnace is 500 DEG C/h, is warming up to 1800 DEG C.
Embodiment 2
1) silicon tetrachloride unstripped gas is prepared: with the step 1 of embodiment 1) identical, difference is: the temperature of vaporization still is adjusted to 40 DEG C in advance, and the silicon tetrachloride flow carried out is 1500g/h, and material containing gas is hydrogen, and material containing gas flow is 2L/min.
2) titanium tetrachloride unstripped gas is prepared: with the step 2 of embodiment 1) identical, difference is: the temperature of vaporization still is adjusted to 125 DEG C in advance, and the titanium tetrachloride flow carried out is 24g/h, and material containing gas is oxygen, and material containing gas flow is 0.2L/min.
3) silicon-dioxide and titanium dioxide granule is generated: with the step 3 of embodiment 1) identical, difference is: hydrogen flowing quantity controls at 500L/min and oxygen flux control at 200L/min; Oxyhydrogen flame temperature reaches 800 DEG C; Basic rod 11 rotating speed under the control of rotating mechanism 12 is 200r/min, and under the control of descending mechanism 10, reduction of speed is 0.5mm/h, and the speed of deposition is 500 Grams Per Hours.
4) component of quartz glass is made: after the titania-doped silica glass stone roller cooling 24h of formation of deposits, take out by roasting kiln, silica glass stone roller is loaded homogenizing process in high temperature homogenizing furnace, the silica glass original paper of Doped with Titanium is prepared again through cold working, high temperature homogenizing furnace is closed structure, keep vacuum in stove, the heat-up rate of high temperature homogenizing furnace is 700 DEG C/h, is warming up to 1700 DEG C.
Embodiment 3
1) silicon tetrachloride unstripped gas is prepared: with the step 1 of embodiment 1) identical, difference is: the temperature of vaporization still is adjusted to 50 DEG C in advance, and the silicon tetrachloride flow carried out is 800g/h, and material containing gas flow is 6L/min;
2) titanium tetrachloride unstripped gas is prepared: with the step 2 of embodiment 1) identical, difference is: the temperature of vaporization still is adjusted to 110 DEG C in advance, and the titanium tetrachloride flow carried out is 150g/h, and material containing gas flow is 0.18L/min;
3) silicon-dioxide and titanium dioxide granule is generated: with the step 2 of embodiment 1) identical, difference is: hydrogen flowing quantity controls at 300L/min and oxygen flux control at 100L/min; Oxyhydrogen flame temperature reaches 1300 DEG C; Basic rod 11 rotating speed under the control of rotating mechanism 12 is 500r/min, and under the control of descending mechanism 10, reduction of speed is 0.2mm/h, and the speed of deposition is 100 Grams Per Hours.
4) component of quartz glass is made: after the titania-doped silica glass stone roller cooling 36h of formation of deposits, take out by roasting kiln, silica glass stone roller is loaded homogenizing process in high temperature homogenizing furnace, the silica glass original paper of Doped with Titanium is prepared again through cold working, high temperature homogenizing furnace is closed structure, keep vacuum in stove, the heat-up rate of high temperature homogenizing furnace is 200 DEG C/h, is warming up to 1900 DEG C.
The present invention adopts technique scheme, and its advantage is as follows:
1) silicon tetrachloride and titanium tetrachloride adulterate under vaporized state, can realize uniform doping, and doping are controlled.
2) layer by layer deposition synthetic method is adopted to prepare low-expansion quartz glass, without defects such as macroscopical bubble, assorted points.
3) adopt vertical chemical gaseous phase depositing process, be conducive to preparation large size silica glass stone roller.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. a preparation method for the silica glass of Doped with Titanium, is characterized in that, comprising:
Silicon-containing material and titaniferous materials being put into oxyhydrogen flame is the burner reacting the energy, vertical chemical Vapor deposition process is adopted to prepare low-expansion quartz glass stone roller, silica glass stone roller is loaded homogenizing process in high temperature homogenizing furnace, then prepares the silica glass of Doped with Titanium through cold working.
2. preparation method according to claim 1, is characterized in that, specifically comprises the following steps:
(1) in burner, pass into hydrogen and oxygen, combustion reactions forms redox reaction atmosphere;
(2) by silicon-containing material and titaniferous materials vaporization under Material control respectively, after uniform mixing device, send in burner and react under the drive of material containing gas, the quality controlling titaniferous materials is 3% ~ 10% of silicon-containing material quality; The SiO generated after reaction 2and TiO 2particle deposition is on the pallet in roasting kiln, and under the high temperature of 1300 ~ 2000 DEG C, successively sintering forms low-expansion coefficient silica glass stone roller; Pallet under the rotation of basic rod, descending at slow speed, silica glass stone roller grow up gradually;
(3) silica glass is cut or polish jade with an emery wheel through homogenizing and follow-up cold working, the final silica glass forming Doped with Titanium.
3. preparation method according to claim 1 and 2, is characterized in that, described silicon-containing material is silicon tetrachloride, and/or described titaniferous materials is titanium tetrachloride.
4. preparation method according to claim 3, is characterized in that, the speed of described deposition is 100 ~ 500 Grams Per Hours.
5. preparation method according to claim 3, is characterized in that, in described high temperature homogenizing furnace, heat-up rate is 200 ~ 700 DEG C/h, is warming up to 1700 ~ 1900 DEG C; Described high temperature homogenizing furnace is closed structure, and keep vacuum or insufflation gas in stove during work, described gas is rare gas element or reducing gas.
6. preparation method according to claim 3, is characterized in that, the flow of described silicon-containing material is 800 ~ 1500g/h, and the flow of described silicon-containing material is 24 ~ 150g/h.
7. preparation method according to claim 6, it is characterized in that, described material containing gas is hydrogen, oxygen or argon gas, and described silicon-containing material material containing gas flow is 2-6L/min, and described titaniferous materials material containing gas flow is 3% ~ 10% of silicon-containing material material containing gas flow.
8. a silica glass for Doped with Titanium, is characterized in that, prepares according to the preparation method described in any one of claim 1-7.
9. the preparation facilities of the silica glass of a Doped with Titanium, it is characterized in that, comprise hydrogen control system, oxygen control system, silicon tetrachloride Controlling System, titanium tetrachloride Controlling System and basic rod, described silicon tetrachloride Controlling System is connected mixing bottle respectively with titanium tetrachloride Controlling System, described mixing bottle connects burner, described hydrogen control system is connected burner respectively with oxygen control system, described burner is positioned at the burner hearth of roasting kiln, described basic rod one end is provided with pallet, described pallet is positioned at described burner hearth, described basic rod the other end connection traversing mechanism, described rotating mechanism connects jacking system, described burner hearth connects chimney.
10. preparation facilities according to claim 9, is characterized in that, described burner is multilayer parcel tubular structure, and the material of described burner is high temperature material; Described roasting kiln is vertical shaft furnace, and described burner is positioned over the position at more than the middle part of burner hearth, and the burner port of described burner faces toward the position of burner hearth inner pallet.
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Cited By (7)

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CN104926088A (en) * 2015-07-16 2015-09-23 中国建筑材料科学研究总院 Method for preparing highly-uniform synthetic quartz glass weight
CN104926087A (en) * 2015-07-16 2015-09-23 中国建筑材料科学研究总院 Deposition furnace for manufacturing synthetic quartz glass roller
CN105036520A (en) * 2015-07-16 2015-11-11 中国建筑材料科学研究总院 Deposition furnace for preparing quartz glass mound
CN111039548A (en) * 2019-12-11 2020-04-21 中国建筑材料科学研究总院有限公司 Method for controlling equal diameter of quartz glass ingot
CN111039549A (en) * 2019-12-11 2020-04-21 中国建筑材料科学研究总院有限公司 Quartz glass ingot founding device and system
CN114195367A (en) * 2021-12-07 2022-03-18 连云港太平洋半导体材料有限公司 Device and method for manufacturing quartz weight
CN114315106A (en) * 2020-10-12 2022-04-12 中天科技精密材料有限公司 Deposition equipment and preparation method of high-purity quartz glass

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CN104926088A (en) * 2015-07-16 2015-09-23 中国建筑材料科学研究总院 Method for preparing highly-uniform synthetic quartz glass weight
CN104926087A (en) * 2015-07-16 2015-09-23 中国建筑材料科学研究总院 Deposition furnace for manufacturing synthetic quartz glass roller
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CN104926088B (en) * 2015-07-16 2018-04-10 中国建筑材料科学研究总院 Height is uniformly synthesized the preparation method of quartz glass stone roller
CN105036520B (en) * 2015-07-16 2018-04-10 中国建筑材料科学研究总院 Prepare the cvd furnace of quartz glass stone roller
CN111039548A (en) * 2019-12-11 2020-04-21 中国建筑材料科学研究总院有限公司 Method for controlling equal diameter of quartz glass ingot
CN111039549A (en) * 2019-12-11 2020-04-21 中国建筑材料科学研究总院有限公司 Quartz glass ingot founding device and system
CN114315106A (en) * 2020-10-12 2022-04-12 中天科技精密材料有限公司 Deposition equipment and preparation method of high-purity quartz glass
CN114195367A (en) * 2021-12-07 2022-03-18 连云港太平洋半导体材料有限公司 Device and method for manufacturing quartz weight

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