CN104325365A - Method for quickly grinding electrostatic chuck - Google Patents
Method for quickly grinding electrostatic chuck Download PDFInfo
- Publication number
- CN104325365A CN104325365A CN201410441447.2A CN201410441447A CN104325365A CN 104325365 A CN104325365 A CN 104325365A CN 201410441447 A CN201410441447 A CN 201410441447A CN 104325365 A CN104325365 A CN 104325365A
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- CN
- China
- Prior art keywords
- electrostatic chuck
- polishing
- abrasive disc
- contact surface
- silicon nitride
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the field of manufacturing of integrated circuits, in particular to a method for quickly grinding an electrostatic chuck. The method comprises the following steps: providing the electrostatic chuck of which the upper surface is provided with a plurality of bumps; providing a grinding disc to grind the electrostatic chuck, wherein a contact surface of the grinding disc and the electrostatic chuck is a silicon nitride layer, so that the bumps of the electrostatic chuck can be effectively repaired; meanwhile technical warming and the grinding of the electrostatic chuck can be combined together, so that the problems of longer consumed time and higher cost of grinding of the electrostatic chuck in the field of manufacturing of the integrated circuit are greatly solved.
Description
Technical field
The present invention relates to IC manufacturing field, relate in particular to a kind of method of quick polishing electrostatic chuck.
Background technology
Plasma etching industrial of the prior art all needs to use a kind of very important parts: electrostatic chuck (Electrostatic chuck is called for short ESC).Electrostatic chuck can provide uniform absorption affinity, not easily causes arching upward of silicon chip, and keeps the flatness of silicon chip surface, increases the yield of this technique, and electrostatic chuck has good heat conductivility simultaneously, and nonpollution environment.
The surface of electrostatic chuck is provided with many minute protrusions and is used for carrying wafer, and the flatness requirement of this projection is very high, if have small difference can cause the heat conductivility of the wafer temperature at this differential position place and other positions variant and cause arching upward of wafer, this small difference can accumulation gradually in long etching process, and finally can cause the critical size difference to some extent of wafer, and finally cause the reduction of wafer yield.Electrostatic chuck surface of the prior art is normally used is aluminium oxide and other materials, very hard, corrosion-resistant, in order to keep the flatness of electrostatic chuck surface projection, usual use silicon chip carries out transmission polishing, silicon chip is utilized to be adsorbed on electrostatic chuck, and utilize the micro-displacement polishing of Electro-static Driven Comb moment protruding, usually need the longer time in this process; In addition when evenness of silicon wafer is poor, even if the polishing longer time also can not reach the ideal effect that technical staff needs, the requirement therefore in order to reach technique may need to change electrostatic chuck, and cost price is very high.Therefore we need a kind of method of quick polishing electrostatic chuck.
Summary of the invention
In view of the above problems, the invention provides a kind of method of quick polishing electrostatic chuck, consuming time longer by this method solving in prior art electrostatic chuck of polishing, the problem that cost price is higher.
The present invention solves the problems of the technologies described above adopted technical scheme:
A method for quick polishing electrostatic chuck, wherein, described method comprises:
Step S1, provide an electrostatic chuck, described electrostatic chuck upper surface has some projections;
Step S2, provide an abrasive disc to polish to described electrostatic chuck, the contact surface of described abrasive disc and described electrostatic chuck is a smooth plane;
Wherein, the contact surface of described abrasive disc and described electrostatic chuck is silicon nitride layer.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, the contact surface of described abrasive disc and described electrostatic chuck can be silicon carbide layer.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, the overall material of described abrasive disc is silicon nitride.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, the material of the contact surface of described abrasive disc is silicon nitride, and the another side material deviating from this contact surface is silicon.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, the hardness of described abrasive disc is 90 ~ 95HRA.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, when polishing to described electrostatic chuck, utilizes contact surface to adsorb the projection of described electrostatic chuck upper surface.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, the material of described electrostatic chuck is aluminium oxide ceramics.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, described electrostatic chuck hardness is 80 ~ 90HRA.
Preferably, the method for above-mentioned quick polishing electrostatic chuck, wherein, before polishing to electrostatic chuck, also comprises: to be polished described abrasive disc by chemical mechanical milling tech, the flatness controlling described blade contact face lower than
Technique scheme tool has the following advantages or beneficial effect:
The method of a kind of quick polishing electrostatic chuck disclosed by the invention, by the electrostatic chuck providing a upper surface to be provided with some projections, and provide an abrasive disc to polish to this electrostatic chuck, and the contact surface of this abrasive disc and this electrostatic chuck is silicon nitride layer, therefore the projection of electrostatic chuck can effectively be repaired, the polishing of a technique warming-up and electrostatic chuck can be combined simultaneously, solve in IC manufacturing field electrostatic chuck of polishing greatly consuming time longer, the problem that cost price is higher.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more obvious.Mark identical in whole accompanying drawing indicates identical part deliberately proportionally not draw accompanying drawing, focuses on purport of the present invention is shown.
Fig. 1 is the schematic cross-section be placed in by abrasive disc in the present invention above electrostatic chuck.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
Consuming time longer for solving in prior art electrostatic chuck of polishing, the problem that cost price is higher, the invention provides a kind of method of quick polishing electrostatic chuck.
First, provide an electrostatic chuck 1, electrostatic chuck 1 upper surface is provided with many evenly distributed projections 2 and is used for carrying wafer.In an embodiment of the present invention, require that the flatness of this projection 2 is very high, to ensure that the temperature heat conductivility of wafer is good and avoid arching upward of wafer.
Preferably, the material of the above-mentioned material of protruding 2 electrostatic chuck 1 is in other words aluminium oxide ceramics, and the hardness of this electrostatic chuck 1 is 80 ~ 90 HRA (as 83HRA, 86HRA or 89HRA and other values within the scope of this); Wherein, HRA is Rockwell hardness unit.
Afterwards, an abrasive disc 3 is provided to polish to this electrostatic chuck 1, specifically, the wherein one side (i.e. contact surface) of this abrasive disc 3 is first adsorbed by the electrostatic effect of this electrostatic chuck 1, polish projection 2 that this electrostatic chuck 1 upper surface has (when polishing to electrostatic chuck 1 again with the contact surface that this abrasive disc 3 and electrostatic chuck 1 are polished, utilize the projection 2 of contact surface adsorption electrostatic sucker 1 upper surface, and carry out follow-up technique for grinding), it is made to reach the requirement of the high-flatness of projection in technique, the contact surface that wherein this abrasive disc 3 and this electrostatic chuck 1 are polished is a smooth plane (being convenient to maintain the stability of this technique) and this contact surface is a silicon nitride layer.
Preferably, in an embodiment of the present invention, when utilizing this abrasive disc 3 pairs of electrostatic chucks 1 to polish, abrasive disc 3 can also be silicon carbide layer with the contact surface of this electrostatic chuck 1.In addition, in an embodiment of the present invention, the overall material of this abrasive disc 3 is preferably silicon nitride, be satisfied with the requirement that above-mentioned contact surface is silicon nitride layer, but the material that those skilled in the art should be understood to the contact surface of this abrasive disc 3 is silicon nitride, but the another side material deviating from this contact surface can be also silicon, makes its object of the present invention as long as meet.
Preferably, the area of this abrasive disc 3 is identical with the area of this electrostatic chuck 1 or be greater than the area stating electrostatic chuck 1, so that is covered in this electrostatic chuck 1 completely, reaches the object of the projection that uniform grinding electrostatic chuck 1 upper surface has.
Preferably, the hardness of this abrasive disc 3 is 90 ~ 95HRA (as 90HRA, 92HRA or 94HRA and other values within the scope of this).
As shown in Figure 1, this abrasive disc 3 upper surface is according to the film 4 of the demand growth different structure of technique, if other silicon materials or the photoresistances etc. such as silicon oxide film are to meet the working environment of different process requirement, in addition, the lower surface of this abrasive disc 3 is the contact surface of this electrostatic chuck 1 of polishing.
In an embodiment of the present invention, abrasive disc 3 and the contact surface of electrostatic chuck 1 are that the reason of silicon nitride layer is as follows: the material because of static sucker is aluminium oxide ceramics, the hardness of the aluminium oxide ceramics of the type is substantially at 80 ~ 90HRA, therefore the polishing poor effect of common silicon chip is adopted, the hardness of such as monocrystalline silicon piece is 70HRA, its hardness is less than the hardness of static sucker, carry out the projection 2 of monocrystalline silicon piece to this static sucker when polishing, coming off of monocrystalline silicon membrane can be caused, and the hardness of silicon nitride material is usually at 90 ~ 95HRA, its hardware is higher than the hardness of aluminium oxide ceramics, therefore effect of polishing can be better, the preparation method of silicon nitride layer is fairly simple simultaneously, such as, chemical vapour deposition (CVD) (Chemical Vapor Deposition is called for short CVD) technique can be adopted to prepare on original silicon chip or on other substrates and form uniform silicon nitride layer, and can polish with special equipment due to abrasive disc 3, abrasive disc 3 is made to be satisfied with flatness requirement needed for the technique of electrostatic chuck 1 of polishing with the flatness of the contact surface of electrostatic chuck 1, such as cmp (Chemical mechanical polishing is called for short CMP) equipment polishing abrasive disc 3 is to obtain the abrasive disc 3 of high-flatness, this abrasive disc 3 can carry out plasma bombardment in polishing electrostatic chuck 1 process in addition, the compactness of the contact surface of further increase abrasive disc 3 and electrostatic chuck 1 and the adsorption capacity increased between electrostatic chuck 1 and abrasive disc 3, the polishing of technique warming-up and electrostatic chuck 1 can also be together with each other, reduce technique warm-up period, and reduce the loss of abrasive disc 3, polishing time and cost etc.
In an embodiment of the present invention, preferably, the flatness controlling abrasive disc 3 is less than
(as
or
and other values within the scope of this).
Finally by adsorb electrostatic chuck 1 with the contact surface of this abrasive disc 3 and electrostatic chuck 1 and polish, in this process, electrostatic chuck 1 is to abrasive disc 3 release electrostatic and produce the projection 2 of this electrostatic chuck 1 upper surface of polishing with the micro-displacement of abrasive disc 3, repair the flatness of the projection that electrostatic chuck 1 has, particulate integrated circuit fabrication process being had to detrimental effects can not be produced in this process simultaneously, and bruting process is consuming time shorter, required cost price is lower.
In sum, the method of a kind of quick polishing electrostatic chuck disclosed by the invention, by the electrostatic chuck providing a upper surface to be provided with some projections, and provide an abrasive disc to polish to this electrostatic chuck, and the contact surface of this abrasive disc and this electrostatic chuck is silicon nitride layer, therefore the projection of electrostatic chuck can effectively be repaired, the polishing of a technique warming-up and electrostatic chuck can be combined simultaneously, solve in IC manufacturing field electrostatic chuck of polishing greatly consuming time longer, the problem that cost price is higher.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of detailed description of the invention, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. a method for quick polishing electrostatic chuck, it is characterized in that, described method comprises:
Step S1, provide an electrostatic chuck, described electrostatic chuck upper surface has some projections;
Step S2, provide an abrasive disc to polish to described electrostatic chuck, the contact surface of described abrasive disc and described electrostatic chuck is a smooth plane;
Wherein, the contact surface of described abrasive disc and described electrostatic chuck is silicon nitride layer.
2. the method for the electrostatic chuck of polishing fast as claimed in claim 1, it is characterized in that, the contact surface of described abrasive disc and described electrostatic chuck is silicon carbide layer.
3. the method for the electrostatic chuck of polishing fast as claimed in claim 1, it is characterized in that, the overall material of described abrasive disc is silicon nitride.
4. the method for the electrostatic chuck of polishing fast as claimed in claim 1, it is characterized in that, the material of the contact surface of described abrasive disc is silicon nitride, and the another side material deviating from this contact surface is silicon.
5. the method for the electrostatic chuck of polishing fast as claimed in claim 1, it is characterized in that, the hardness of described abrasive disc is 90 ~ 95HRA.
6. the method for the electrostatic chuck of polishing fast as claimed in claim 1, is characterized in that, when polishing to described electrostatic chuck, utilizing contact surface to adsorb the projection of described electrostatic chuck upper surface.
7. the method for the electrostatic chuck of polishing fast as claimed in claim 1, it is characterized in that, the material of described electrostatic chuck is aluminium oxide ceramics.
8. the method for the electrostatic chuck of polishing fast as claimed in claim 1, it is characterized in that, described electrostatic chuck hardness is 80 ~ 90HRA.
9. the method for the electrostatic chuck of polishing fast as claimed in claim 1, is characterized in that, before polishing to electrostatic chuck, also comprise: to be polished described abrasive disc by chemical mechanical milling tech, the flatness controlling described blade contact face lower than
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410441447.2A CN104325365B (en) | 2014-09-01 | A kind of method of quick polishing electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410441447.2A CN104325365B (en) | 2014-09-01 | A kind of method of quick polishing electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104325365A true CN104325365A (en) | 2015-02-04 |
| CN104325365B CN104325365B (en) | 2017-01-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799456A (en) * | 2017-10-27 | 2018-03-13 | 德淮半导体有限公司 | The protection tool and polishing process of electrostatic chuck |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268994B1 (en) * | 1999-07-09 | 2001-07-31 | Dorsey Gage, Inc. | Electrostatic chuck and method of manufacture |
| CN1365518A (en) * | 1999-05-25 | 2002-08-21 | 东陶机器株式会社 | Electrostatic chuck and treating device |
| JP2005019700A (en) * | 2003-06-26 | 2005-01-20 | Sumitomo Osaka Cement Co Ltd | Method of manufacturing attracting and fixing apparatus |
| CN1975998A (en) * | 2005-11-30 | 2007-06-06 | Ips有限公司 | Static cupule for vacuum processing device, vacuum processing device with the same, and its manufacturing method |
| CN1988128A (en) * | 2005-12-22 | 2007-06-27 | 日本碍子株式会社 | Electrostatic chuck |
| CN102205517A (en) * | 2010-03-31 | 2011-10-05 | 比亚迪股份有限公司 | Method for thinning glass |
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1365518A (en) * | 1999-05-25 | 2002-08-21 | 东陶机器株式会社 | Electrostatic chuck and treating device |
| US6268994B1 (en) * | 1999-07-09 | 2001-07-31 | Dorsey Gage, Inc. | Electrostatic chuck and method of manufacture |
| JP2005019700A (en) * | 2003-06-26 | 2005-01-20 | Sumitomo Osaka Cement Co Ltd | Method of manufacturing attracting and fixing apparatus |
| CN1975998A (en) * | 2005-11-30 | 2007-06-06 | Ips有限公司 | Static cupule for vacuum processing device, vacuum processing device with the same, and its manufacturing method |
| CN1988128A (en) * | 2005-12-22 | 2007-06-27 | 日本碍子株式会社 | Electrostatic chuck |
| CN102205517A (en) * | 2010-03-31 | 2011-10-05 | 比亚迪股份有限公司 | Method for thinning glass |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799456A (en) * | 2017-10-27 | 2018-03-13 | 德淮半导体有限公司 | The protection tool and polishing process of electrostatic chuck |
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