CN104316571A - Preparation method of carbon nanotube-heterojunction organic gas sensor - Google Patents
Preparation method of carbon nanotube-heterojunction organic gas sensor Download PDFInfo
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- CN104316571A CN104316571A CN201410624791.5A CN201410624791A CN104316571A CN 104316571 A CN104316571 A CN 104316571A CN 201410624791 A CN201410624791 A CN 201410624791A CN 104316571 A CN104316571 A CN 104316571A
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Abstract
The invention discloses a preparation method of a carbon nanotube-heterojunction organic gas sensor. The carbon nanotube-heterojunction organic gas sensor comprises a dielectric layer, an inductive layer, a semiconductor layer, a heterojunction layer and an organic gas-sensitive layer, wherein a carbon nanotube is used as the organic gas-sensitive layer; one surface of the organic gas-sensitive layer is connected with a heterojunction; the other surface of the organic gas-sensitive layer is connected with a source electrode and a drain electrode. Particularly, high gas sensitivity is achieved through the carbon nanotube organic gas-sensitive layer, and carrier transport is improved through the organic heterojunction. The organic carbon nanotube-heterojunction organic gas sensor is fast in response and high in sensitivity at room temperature, is prepared by a vacuum deposition and solution technology, and is simple in preparation process and low in cost.
Description
Technical field
The present invention relates to a kind of gas sensor, especially a kind of preparation method of carbon nanotube heterojunction organic gas sensor.
Background technology
At present, gas sensor of a great variety, common are solid thermal conduction-type sensor, fixed electric potential electroanalysis formula sensor, vapor-phase chromatography sensor.But mainly concentrate on the synthesis of organic semiconductor thin-film with the correlative study of OTFT gas sensor, the aspects such as electric current noise abatement.But the research being aimed at more than semiconductor layer still lacks very much.Therefore the character more than semiconductor layer will directly affect the performance of organic heterojunction transistor gas sensor.
Summary of the invention
The present invention, in order to solve problems of the prior art, proposes a kind of preparation method of carbon nanotube heterojunction organic gas sensor, its objective is that to overcome the sensitivity that existing gas sensor exists low, and the problem such as response speed is slow.By obtaining the change of semiconductor layer, there is hypersensitivity energy, a kind of carbon nanotube heterojunction organic gas sensor of energy rapid response speed.
The problems referred to above of the present invention are achieved in that first with flexible resin/grid/silicon nitride (Si
3n
4), and doublely do substrate; Then evaporation one deck inducing layer induced semiconductor layer stable crystalline thereon, then evaporation one deck organism on the semiconductor layer, form heterojunction; Finally evaporation one deck organic gas-sensitive material on hetero junction layer.When gas contacts with organic gas-sensitive layer, realize producing charge carrier and having very high gas sensing property, organic charge carrier transport layer is then utilize the organic heterojunction semiconductor with very high mobility, realizes the transport effect of charge carrier.
Organic gas-sensitive of the present invention is laminated to be connected with heterojunction, one side with source electrode, draining is connected.So very sufficient by the performance characterization of gas sensing layer out, therefore the present invention can improve the performance of organic transistor gas sensor effectively.
The present invention has following characteristics:
Select flexible resin to do substrate, its feature is, quality gently, not easily broken, be easy to large area and produce, be convenient to transport.
Described dielectric layer adopts silicon nitride (Si
3n
4), its feature is, hardness is high, specific inductive capacity is large, compact structure, good heat conductivity.
Described inducing layer is α-four bithiophene (α-4T), and its feature is, can better induce rubrene (Rubrene) stable crystalline.
The described heterogeneous heterojunction become rubrene (Rubrene) and fullerene (C60) and form, its feature is, rubrene monocrystalline mobility is up to 10cm
2/ Vs, the heterojunction electronics ability to act of formation is strong, and mobility is higher.
Described organic gas-sensitive layer adopts Single Walled Carbon Nanotube (SCNT) to form, or adopts multi-walled carbon nano-tubes (MCNT) to form, its feature be to have highly sensitive, fast response time, size are little, energy consumption is low and normally work under room temperature.
Accompanying drawing explanation
Accompanying drawing 1 common gas transducer production method.
The preparation method of accompanying drawing 2 carbon nanotube heterojunction organic gas sensor.
Embodiment
A) take flexible resin as substrate, and sputter grid, chemical vapour deposition technique making dielectric layer silicon nitride (Si successively
3n
4), thickness is not less than 80nm, is not more than 300nm, and photoetching forms gate electrode pattern.
B) with the substrate of washing lotion cleaning with silicon nitride layer.
C) with the silicon nitride (Si of vacuum evaporation technique in drying
3n
4) substrate prepares one deck α-four bithiophene (α-4T) inducing layer, thickness is not less than 5nm, is not more than 30nm.
D) on inducing layer, prepare one deck rubrene (Rubrene) film by vacuum evaporation technique, thickness is not less than 1nm, is not more than 20nm.
E) on rubrene (Rubrene) film, prepare one deck fullerene (C60) thin layer by vacuum evaporation technique, form heterojunction, thickness is not less than 1.5nm, is not more than 60nm.
F) on hetero-junction thin-film, prepare one deck carbon nano-tube gas-sensitive thin layer with solution spraying plating and spin coating technique, thickness is not less than 0.2nm, is not more than 10nm.
G) metal of molybdenum high conductivity is prepared with sputtering technology as source electrode, drain electrode.The area of channel length and source-drain electrode limits by mask plate.
Claims (8)
1. the preparation method of a carbon nanotube heterojunction organic gas sensor comprises: substrate (1), grid (2), dielectric layer (3), inducing layer (4), halfbody layer (5), organic heterojunction layer (6), gas sensing layer (7), source electrode, drain electrode (8).
2. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, is characterized in that, substrate (1) adopts glass and flexible resin.
3. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, it is characterized in that, grid (2), source electrode, drain electrode (8) are made up of the metal of neodymium aluminium, molybdenum tungsten, molybdenum high conductivity and metal oxide thereof or compound substance.
4. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, is characterized in that, dielectric layer (3) is silicon nitride (Si
3n
4), thickness is not less than 80nm, is not more than 300nm.
5. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, is characterized in that, inducing layer (4) is α-four bithiophene (α-4T), and thickness is not less than 5nm, is not more than 30nm.
6. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, is characterized in that, semiconductor layer (5) is rubrene (Rubrene), and monocrystalline mobility reaches 10cm
2/ Vs.
7. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, is characterized in that, hetero junction layer (6) is made up of semiconductor layer (5) and fullerene (C60), and thickness is not less than 1.5nm, is not more than 60nm.
8. the preparation method of a kind of carbon nanotube heterojunction organic gas sensor according to claim 1, it is characterized in that, gas sensing layer (7) is made up of Single Walled Carbon Nanotube (SCNT), or forms with multi-walled carbon nano-tubes (MCNT), thickness is not less than 0.2nm, is not more than 10nm.
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| CN201410624791.5A CN104316571B (en) | 2014-11-10 | 2014-11-10 | A kind of preparation method of carbon nanotube heterojunction organic gas sensor |
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| CN104316571A true CN104316571A (en) | 2015-01-28 |
| CN104316571B CN104316571B (en) | 2017-12-19 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104865293A (en) * | 2015-05-19 | 2015-08-26 | 清华大学 | Flexible gas sensor based on three-dimensional net structured sensitive film and preparation method of flexible gas sensor |
| CN105336880A (en) * | 2015-10-23 | 2016-02-17 | 长春工业大学 | Method for manufacturing rubrene film based on double layer induction technology |
| CN110261461A (en) * | 2019-07-08 | 2019-09-20 | 长春工业大学 | A kind of preparation method of the ultra-thin hetero-junctions laminated film gas sensor based on OFETs |
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| CN204330652U (en) * | 2014-07-28 | 2015-05-13 | 长春工业大学 | A kind of organic gas sensor of C-nano tube hetero-junction |
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| JPH10123083A (en) * | 1996-10-16 | 1998-05-15 | Chichibu Onoda Cement Corp | Gas sensor |
| KR20110000917A (en) * | 2009-06-29 | 2011-01-06 | 한국과학기술연구원 | Sensors for detecting temperature and multi gas and methed for manufacturing the same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104865293A (en) * | 2015-05-19 | 2015-08-26 | 清华大学 | Flexible gas sensor based on three-dimensional net structured sensitive film and preparation method of flexible gas sensor |
| CN105336880A (en) * | 2015-10-23 | 2016-02-17 | 长春工业大学 | Method for manufacturing rubrene film based on double layer induction technology |
| CN105336880B (en) * | 2015-10-23 | 2017-09-12 | 长春工业大学 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
| CN110261461A (en) * | 2019-07-08 | 2019-09-20 | 长春工业大学 | A kind of preparation method of the ultra-thin hetero-junctions laminated film gas sensor based on OFETs |
| CN110261461B (en) * | 2019-07-08 | 2021-06-01 | 长春工业大学 | Preparation method of ultrathin heterojunction composite film gas sensor based on OFETs |
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|---|---|
| CN104316571B (en) | 2017-12-19 |
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Inventor after: Wang Lijuan Inventor after: Sun Yang Inventor after: Du Hao Inventor after: Zou Fengjun Inventor after: Li Yiping Inventor before: Wang Lijuan Inventor before: Du Hao Inventor before: Zou Fengjun Inventor before: Li Yiping |
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