CN104300366B - The preparation method for reducing the gallium arsenide laser of electronics leakage - Google Patents
The preparation method for reducing the gallium arsenide laser of electronics leakage Download PDFInfo
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- CN104300366B CN104300366B CN201410563125.5A CN201410563125A CN104300366B CN 104300366 B CN104300366 B CN 104300366B CN 201410563125 A CN201410563125 A CN 201410563125A CN 104300366 B CN104300366 B CN 104300366B
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Abstract
A kind of preparation method for the gallium arsenide laser for reducing electronics leakage, comprises the following steps：Step 1：In gallium arsenide substrate successively epitaxial growth N-type limiting layer, N-type ducting layer, Quantum well active district, p-type ducting layer, narrow band gap insert layer, broad-band gap insert layer, p-type limiting layer and p-type contact layer；Step 2：Using the method for wet etching or dry etching, p-type contact layer and p-type limiting layer are etched into ridge；Step 3：P-type Ohmic electrode is made in the upper surface of p-type contact layer；Step 4：Gallium arsenide substrate is thinned, cleaning；Step 5：N-type Ohmic electrode is made at the back side of gallium arsenide substrate, forms laser；Step 6：Cleavage is carried out, in the cavity surface film coating of laser, is finally encapsulated on shell, completes to make.The present invention can substantially reduce electronics leakage.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, a kind of gallium arsenide laser for reducing electronics leakage
Preparation method.
Background technology
With developing rapidly for semiconductor photoelectronic device, high power semiconductor lasers arise at the historic moment.Due to semiconductor
Laser small volume, cheap, electro-optical efficiency be high and the advantages that long lifespan, semiconductor laser is in optoelectronic areas
Have a very wide range of applications.Semiconductor laser is ground in field of industrial processing, therapeutic treatment field, military field and theory
Study carefully field and all play important role.So far, compared with other semiconductor III-V materials, to GaAs material
Research is most ripe.Thus, people are also highest to the performance requirement of gallium arsenide laser, and this shows gallium arsenide laser
Device can have very low threshold current, very low vertical divergence angle, higher electro-optical efficiency etc. other semiconductor lasers
The advantages of device is incomparable.
Gallium arsenide laser material layer is broadly divided into three parts：It is active area that single quantum well or MQW are formed, active
Area side provides the N areas of electronics for active area, active area opposite side provides the P areas in hole for active area.By applying outer biasing
Pressure driving electronics and hole are injected into active area on the direction perpendicular to junction plane and carry out compound and produce light.Pass through side two
The understanding minute surface at end forms feedback cavity so that light caused by electron-hole recombinations is in the continuous resonance of intracavitary and to form wavefront parallel
In the standing wave of minute surface.If the gain of light in active area has exceeded the light loss in laser structure, will produce amplification by
Swash radiation, laser will emit from mirrored ends.
However, it is the problem of people compare worry that electronics leakage causes laser performance to deteriorate to p-type limitation.Electronics leakage
It is broadly divided into three aspects：First, do not captured from the electronics of electrode injection and hole by two words, be directly transported to limiting layer
Caused by electronics leakage.Second, escaped, cause again because the temperature of active area is higher by the carrier that SQW is captured
Electronics leakage.3rd, the electron-hole recombinations captured by SQW, but the energy of compound release is discharged in the form of photon
Out, but pass to neighbouring electronics or hole makes hot carrier, cause electronics leakage.For gallium arsenide laser
Electronics leakage problem, the present invention, can be first by introducing narrow band gap insert layer and broad-band gap insert layer in laser structure
The electron energy to escape from active area is reduced, the effective barrier height of such electronic surface pair introduces electronics far above simple
The barrier height on barrier layer, so as to reduce the requirement of the band gap width to limiting layer material, be advantageous to the actual behaviour of laser
Make.
The content of the invention
Present invention aims at propose a kind of preparation method for the gallium arsenide laser for reducing electronics leakage, in laser
Narrow band gap insert layer and broad-band gap insert layer are introduced in structure, the electron energy to be escaped from active area can be reduced, so
The effective barrier height of electronic surface pair is let out far above the simple barrier height for introducing electronic barrier layer so as to greatly reduce electronics
Leakage.
The present invention provides a kind of preparation method for the gallium arsenide laser for reducing electronics leakage, comprises the following steps：
Step 1：In gallium arsenide substrate successively epitaxial growth N-type limiting layer, N-type ducting layer, Quantum well active district, p-type ripple
Conducting shell, narrow band gap insert layer, broad-band gap insert layer, p-type limiting layer and p-type contact layer；
Step 2：Using the method for wet etching or dry etching, p-type contact layer and p-type limiting layer are etched into ridge；
Step 3：P-type Ohmic electrode is made in the upper surface of p-type contact layer；
Step 4：Gallium arsenide substrate is thinned, cleaning；
Step 5：N-type Ohmic electrode is made at the back side of gallium arsenide substrate, forms laser；
Step 6：Cleavage is carried out, in the cavity surface film coating of laser, is finally encapsulated on shell, completes to make.
The invention has the advantages that by introducing narrow band gap insert layer and broad-band gap insert layer, can reduce from active
The electron energy that area escapes, the effective barrier height of such electronic surface pair is far above the simple potential barrier for introducing electronic barrier layer
Highly, so as to greatly reducing electronics leakage.
Brief description of the drawings
In order to further illustrate present disclosure, described in detail below in conjunction with example and accompanying drawing as after, wherein：
Fig. 1 is a kind of laser schematic diagram for reducing gallium arsenide laser electronics leakage of the present invention.
Fig. 2 is conduction band schematic diagram of the laser structure in the direction of growth, electric when electronics is transported to narrow band gap insert layer
Sub- energy is lowered, and adds height of the electronics in effective potential barrier in p areas.
Embodiment
Referring to shown in Fig. 1, the present invention provides a kind of preparation method for the gallium arsenide laser for reducing electronics leakage, including
Following steps.
Step 1：In gallium arsenide substrate 10 successively epitaxial growth N-type limiting layer 11, N-type ducting layer 12, Quantum well active district
13rd, p-type ducting layer 14, narrow band gap insert layer 15, broad-band gap insert layer 16, p-type limiting layer 17 and p-type contact layer 18.
Step 2：Using the method for wet etching or dry etching, p-type contact layer 18 and p-type limiting layer 17 are etched into ridge
Type.Wet etching operation is fairly simple, when corrosion depth is not that chin-deep can use, but undercutting is easily caused, to device
Influence it is bigger.If corrosion depth is very deep, preferably with dry etchings such as ICP.
Step 3：One layer of layer of oxidation mould of growth above ridge is being fabricated to, and using the method for photoetching, in p-type contact layer 18
Upper surface make p-type Ohmic electrode 19.First, the SiO deposited using PECVD2Film and former GaAs surface binding propensities compared with
Good and SiO2The good electrical insulation characteristics of film, effectively coordinate with photoetching process, can be by SiO2Layer is covered in addition to fairlead
On all upper surfaces.Secondly, with corrosive liquid corrosion oxidation silicon.The corrosive liquid is by hydrofluoric acid: ammonium fluoride: deionized water=3ml:
6g: 10ml proportioning forms.Finally, sputtering Ti/Pt/Au does front electrode, and substrate will keep sufficiently high temperature when sputtering Ti-Au
(80 degree) so that moisture and its useless material volatilization of adsorption totally, form completely clean surface, when ensureing to sputter
Metal level, it can firmly be adhered to slice, thin piece surface.To ensure sufficiently high vacuum during sputtering, make metal raw during sputtering
Son, argon ion have enough free paths when acceleration fields are moved, enable it is strong get on target, and metallic atom is strong
Get on slice, thin piece, form firm metal film, while prevent metal and surface oxidation.
Step 4：Gallium arsenide substrate 10 is thinned, cleaning.Thickness must be controlled between 80100um after polishing, too thick
Cleavage is not easy, tube core is frangible, destructible Cavity surface；It is too thin to make piece damage layer cause to damage close to structural area, influence the device longevity
Life.Cleavage is not easy more than 100um, destroys Cavity surface during cleavage.To ensure during grinding and polishing should not fragment.Bonding die, it is certain during playing piece
Fully to melt wax.When polishing slice is cleaned, heating-up temperature is not easy too high, otherwise rupture diaphragm.
Step 5：N-type Ohmic electrode 20 is made in gallium arsenide substrate 10, forms laser.Clean, clean immediately after polishing
Evaporate at once afterwards, ensure that slice, thin piece surface does not aoxidize, make AuGeNi adhesions firm.It must ensure that silicon has enough during evaporation
High temperature, slice, thin piece adsorption moisture is vapored away completely, ensure the good adhesion of slice, thin piece.
Step 6：Cleavage is carried out, in the cavity surface film coating of laser, is finally encapsulated on shell, completes to make.In laser
Cavity surface plate anti-reflection film and Anti-reflective coating, it is possible to reduce laser threshold current, and peak value half-breadth.Strengthen the modeling energy of laser
Power.
Wherein the material of narrow band gap insert layer 15 is AlGaAs, and 0.1-0.8 μm of thickness, aluminium component is 0.1-0.4, its
Band gap width is less than the band gap width of p-type ducting layer 14.
Wherein 13 SQW numbers of Quantum well active district are 1-5, and the material of SQW is GaAs material, gallium arsenic phosphide
Material and indium gallium arsenic material, the thickness of each SQW is 1-10nm, and quantum barrier material corresponds to aluminum gallium arsenide, indium gallium phosphorus respectively
And gallium arsenic phosphide material.
Wherein the thickness of p-type ducting layer 14 is 0.2-2 μm.
Wherein the material of narrow band gap insert layer 15 is AlGaAs, and 0.1-0.8 μm of thickness, aluminium component is 0.1-0.4, its
Band gap width will be less than the band gap width of p-type ducting layer 14.
Wherein the material of broad-band gap insert layer 16 is AlGaAs, and 0.05-0.3 μm of thickness, aluminium component is 0.7-1, its
Band gap width is higher than the band gap width of narrow band gap insert layer 15.
7. the preparation method of the gallium arsenide laser according to claim 1 for reducing electronics leakage, wherein ridge are carved
The depth of erosion is reached in p-type limiting layer 17.
Refer to shown in Fig. 2, the figure is conduction band schematic diagram of the corresponding laser structure in the direction of growth.Narrow band gap insert layer
Conduction band it is relatively low, formed potential well, when electronics is transported to the region, energy is lowered.Broad-band gap insert layer is used for stopping energy
Measure the electronics having been decreased by.Therefore, the comprehensive of narrow band gap and broad-band gap insert layer is had using greatly reduce that electronics faces
Imitate barrier height.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., the protection of the present invention should be included in
Within the scope of.
Claims (3)
1. a kind of preparation method for the gallium arsenide laser for reducing electronics leakage, comprises the following steps：
Step 1：Gallium arsenide substrate successively epitaxial growth N-type limiting layer, N-type ducting layer, Quantum well active district, p-type ducting layer,
Narrow band gap insert layer, broad-band gap insert layer, p-type limiting layer and p-type contact layer；
Wherein the material of narrow band gap insert layer is AlGaAs, and 0.1-0.8 μm of thickness, aluminium component is 0.1-0.4, and its band gap is wide
Band gap width of the degree less than p-type ducting layer；
Wherein the material of broad-band gap insert layer is AlGaAs, and 0.05-0.3 μm of thickness, aluminium component is 0.7-1, and its band gap is wide
Degree is higher than the band gap width of narrow band gap insert layer；
Step 2：Using the method for wet etching or dry etching, p-type contact layer and p-type limiting layer are etched into ridge, wherein
The depth of ridge etching is reached in p-type limiting layer；
Step 3：P-type Ohmic electrode is made in the upper surface of p-type contact layer；
Step 4：Gallium arsenide substrate is thinned, cleaning；Thickness control after polishing is between 80-100 μm；
Step 5：N-type Ohmic electrode is made at the back side of gallium arsenide substrate, forms laser；
Step 6：Cleavage is carried out, in the cavity surface film coating of laser, is finally encapsulated on shell, completes to make.
2. the preparation method of the gallium arsenide laser according to claim 1 for reducing electronics leakage, wherein SQW are active
The SQW number in area is 1-5, and the material of SQW is GaAs material, gallium arsenic phosphide material or indium gallium arsenic material, Mei Yiliang
The thickness of sub- trap is 1-10nm, and quantum barrier material corresponds to aluminum gallium arsenide, indium gallium phosphorus or gallium arsenic phosphide material respectively.
3. the preparation method of the gallium arsenide laser according to claim 1 for reducing electronics leakage, wherein p-type ducting layer
Thickness is 0.2-2 μm.
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| CN103280695B (en) * | 2013-05-28 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Long wavelength GaNAsBi/GaAs multiple quantum well laser and preparation method thereof |
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