CN104294071B - SiCp/Cu composite that a kind of low temperature glass strengthens mutually and preparation method thereof - Google Patents
SiCp/Cu composite that a kind of low temperature glass strengthens mutually and preparation method thereof Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 65
- 239000002131 composite material Substances 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims description 75
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 64
- 239000000843 powder Substances 0.000 claims description 37
- 239000008187 granular material Substances 0.000 claims description 28
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 12
- 238000010792 warming Methods 0.000 claims description 12
- 238000001354 calcination Methods 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 238000000748 compression moulding Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 5
- 238000006722 reduction reaction Methods 0.000 claims description 5
- 238000003980 solgel method Methods 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 2
- 150000001879 copper Chemical class 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical group [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- 238000003746 solid phase reaction Methods 0.000 abstract description 4
- 238000010671 solid-state reaction Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 230000001629 suppression Effects 0.000 abstract 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000013019 agitation Methods 0.000 description 6
- 238000007605 air drying Methods 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000003828 vacuum filtration Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 235000013312 flour Nutrition 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000010406 interfacial reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The invention discloses the SiC that a kind of low temperature glass strengthens mutuallyp/ Cu composite and preparation method thereof, belongs to Ceramic Reinforced MMCs preparing technical field.SiCpBeing dispersed with, in the Cu matrix of/Cu composite, the SiC particulate wrapped up mutually by glass, glass coordinates and is divided into SiO2And K2O, wherein SiO2With K2The mol ratio of O is 2～6, described SiC and glass middle SiO mutually2And the volume ratio of Cu is 1:(0.2～1.2): (2～4).On the one hand low temperature glass has preferable interface wet ability when melted with SiC particulate, and during Composite Sintering, Cu blapharoplast surface can form a certain amount of Cu simultaneously2O, participates in the formation of interfacial glass phase, and therefore Cu matrix and glass combine well；On the other hand, straight surfaces brought into contact when the introducing of interfacial glass phase can avoid multiple SiC particulate to reunite, stop the phase counterdiffusion of reactant atom in Interface solid state reaction simultaneously, thus effectively suppression Interface solid state reaction product generates, make composite obtain good comprehensive mechanical property.
Description
Technical field
Present invention relates particularly to the SiC that a kind of low temperature glass strengthens mutuallyp/ Cu composite, and the preparation method of this composite, belong to Ceramic Reinforced MMCs preparing technical field.
Background technology
Carborundum granule-reinforced copper-based composite material, combines Copper substrate and the respective advantage of carbofrax strengthening particle, cooperative compensating, the most excellent conduction, heat conduction and the performance such as wear-resistant, and has the advantages such as low raw-material cost, preparation technology are simple.SiCp/ Cu composite probably becomes the high performance material of a new generation's structure-function integration, and plays an important role in the field such as Aero-Space, Electronic Packaging, is a kind of new material with broad prospect of application.But due to the difference of SiC and Cu lattice types, there is the series of problems such as nonwetting, dispersing uniformity is poor between causing melted Cu and SiC biphase, and during Composite Sintering, be susceptible to interfacial reaction, had a strong impact on SiCpThe lifting of/Cu composite material combination property.At present, having the literature research of a large amount of interface modification about ceramic-metal composite material, to improve interface cohesion and the dispersing uniformity of SiC particles reinforced phase and metallic matrix, but combination property improves relatively limited.
Summary of the invention
It is an object of the invention to provide the SiC that a kind of low temperature glass strengthens mutuallyp/ Cu composite.
Meanwhile, the present invention also provides for the SiC that a kind of low temperature glass strengthens mutuallypThe preparation method of/Cu composite.
In order to realize object above, the technical solution adopted in the present invention is:
The SiC that a kind of low temperature glass strengthens mutuallyp/ Cu composite, is dispersed with the SiC particulate wrapped up mutually by glass in Cu matrix.
Described glass coordinates and is divided into SiO2And K2O, SiO2With K2The mol ratio of O is 2～6.
Described SiC and glass middle SiO mutually2And the volume ratio of Cu is 1:(0.2～1.2): (2～4).
The size of described SiC particulate is 3～20 μm.
The SiC that a kind of low temperature glass strengthens mutuallypThe preparation method of/Cu composite, comprises the following steps:
(1) sol-gel process is used to prepare by amorphous Si O2The pluralgel body of parcel SiC, sucking filtration, dried grinding obtain by amorphous Si O2The powder body of parcel SiC；
(2) by powder body and the K of step (1)2CO3·1/2H2O ground and mixed, after compression molding, calcining generates glass phase, grind, sieve after obtain being wrapped up mutually the powder body of SiC by glass；
(3) utilize displacement reduction reaction to wrap up Cu granule in the powder granule surface of step (2), sucking filtration, sieve and i.e. obtain SiC after dryingp/ Cu composite granule；
(4) take the composite granule of step (3), utilize vacuum heating-press sintering method to prepare the SiC that low temperature glass strengthens mutuallyp/ Cu composite.
Sol-gel process in described step (1) is: tetraethyl orthosilicate (TEOS), α-SiC are scattered in ethanol solution, and regulation solution ph is 2～3, is sufficiently stirred at 30～60 DEG C, makes tetraethyl orthosilicate complete hydrolysis form SiO2Colloidal sol, then to regulate solution ph be 8～11, stirs and i.e. obtains pluralgel body.The time stirred in acid condition is 2～6 hours, and under the conditions of alkalescence, the time of stirring is 0.1～1 hour.
In described step (1) after vacuum filtration, forced air drying 1.5～2.5 hours under the conditions of 75～85 DEG C.
SiO in the powder body of step (1) in described step (2)2With K2CO3·1/2H2The mol ratio of O is 2～6.
In described step (2), the pressure of compression molding is 5～20MPa.
In described step (2), the temperature of calcining is 750～800 DEG C, and calcination time is 1～4 hour.
Described step (2) is sieved into crossing 200 mesh sieves.
Displacement reduction reaction in described step (3) is: be scattered in soluble copper saline solution by the powder body of step (2), adds the suspension containing reducing metal powder while stirring, replace copper at 0～10 DEG C.
Described soluble copper salt is copper sulfate, copper chloride or copper nitrate.
Described reducing metal powder is preferably zinc powder or iron powder.
In described step (3) after sucking filtration, being vacuum dried 5～7 hours under the conditions of 75～85 DEG C, cross 120 mesh sieves, the number of times that sieves is at least 3 times.
Vacuum heating-press sintering method in described step (4) is: by composite granule precompressed under room temperature, 5～15MPa pressure of step (3), it is warming up to 550～650 DEG C of heat-insulation pressure keepings 10～30 minutes, boost to 20～40MPa again, it is warming up to 700～800 DEG C of heat-insulation pressure keepings 0.5～2 hours, the demoulding after cooling down with furnace temperature.
Beneficial effects of the present invention:
The present invention uses three step packs to prepare SiCp/ Cu composite granule, then vacuum heating-press sintering prepares composite, by SiC particulate surface parcel low temperature glass as boundary layer, SiC can be effectively improvedp/ Cu composite material interface binding characteristic, controls interfacial reaction.On the one hand low temperature glass has preferable interface wet ability when melted with SiC particulate, and during Composite Sintering, Cu blapharoplast surface can form a certain amount of Cu simultaneously2O, participates in the formation of interfacial glass phase, and therefore Cu matrix and glass combine well；On the other hand, straight surfaces brought into contact when the introducing of interfacial glass phase can avoid multiple SiC particulate to reunite, stop the phase counterdiffusion of reactant atom in Interface solid state reaction simultaneously, thus effectively suppress the generation of its Interface solid state reaction product fragility copper silicide, make composite obtain good comprehensive mechanical property.
Accompanying drawing explanation
Fig. 1 is parcel SiO in SiC particulate surface in the embodiment of the present invention 12The XRD figure spectrum of (a) and glass phase (b)；
Fig. 2 is that in embodiment 1, SiC particulate is schemed through the SEM of difference parcel step；
Fig. 3 is SiC in embodiment 1pThe section SEM figure of/Cu composite；
Fig. 4 is SiC in embodiment 1pThe XRD figure spectrum of/Cu composite.
Detailed description of the invention
The present invention is only described in further detail by following embodiment, but does not constitute any limitation of the invention.
Embodiment 1
The SiC that in the present embodiment, low temperature glass strengthens mutuallyp/ Cu composite, is dispersed with the SiC particulate wrapped up mutually by glass, wherein SiC, SiO in Cu matrix2, the volume ratio of Cu three be 1:0.6:3, glass mutually in SiO2With K2The mol ratio of O is 3, and the size of SiC particulate is 10 μm.
The SiC that in the present embodiment, low temperature glass strengthens mutuallypThe preparation method of/Cu composite, comprises the following steps:
(1) it is 23:35:3 according to ester, alcohol, the volume ratio of water three, tetraethyl orthosilicate (TEOS), α-SiC are scattered in ethanol solution, being 2 with citric acid regulating solution pH value, magnetic agitation 3 hours under the conditions of 45 DEG C, making tetraethyl orthosilicate complete hydrolysis is SiO2Form colloidal sol, then be 8 by ammonia regulation solution ph, continue magnetic agitation and within 0.1 hour, obtain pluralgel body, vacuum filtration, forced air drying 2 hours under the conditions of 80 DEG C, grind and i.e. obtain by amorphous Si O2The powder body of parcel SiC；
(2) by powder body and the K of step (1)2CO3·1/2H2O ground and mixed, SiO in powder body2With K2CO3·1/2H2The mol ratio of O is 3,10MPa pressure compression molding, within 4 hours, generates glass phase at 750 DEG C of temperature lower calcinations, grinds flour, obtains being included mutually by glass the powder body of SiC after crossing 200 mesh sieves；
(3) powder body of step (2) is scattered in copper-bath, at 0 DEG C, dropping contains the suspension of reproducibility zinc powder while stirring, displacement copper, and utilize Spin precipitate to wrap up Cu granule in the powder granule surface of step (2), sucking filtration, it is vacuum dried 6 hours under the conditions of 80 DEG C, crosses 3 120 mesh sieves, obtain SiCp/ Cu composite granule；
(4) by composite granule precompressed under room temperature, 10MPa pressure of step (3), it is warming up to 600 DEG C with 20 DEG C/min, heat-insulation pressure keeping 20 minutes, then boost to 30MPa, and it is warming up to 750 DEG C of heat-insulation pressure keepings 1 hour, after cooling down with furnace temperature, the demoulding i.e. obtains SiCp/ Cu composite.
Parcel SiO in SiC particulate surface in the present embodiment2A the XRD figure spectrum of () and glass phase (b) is shown in Fig. 1；SiC particulate is shown in Fig. 2 through the SEM figure of difference parcel step, (a) original SiC in Fig. 2, (b) amorphous SiO2The SiC, the SiC that (c) glass wraps up mutually, (d) SiC of parcelp/Cu；SiCpThe section SEM figure of/Cu composite is shown in Fig. 3；SiCpThe XRD figure spectrum of/Cu composite is shown in Fig. 4.
From figure 3, it can be seen that SiC prepared by the present embodimentp/ Cu microstructure of composite is uniform, consistency is high.The porosity is 0.99～2.22%, and Vickers hardness is 1.93～2.07GPa, and bending strength is 228～242MPa.
Embodiment 2
The SiC that in the present embodiment, low temperature glass strengthens mutuallyp/ Cu composite, is dispersed with the SiC particulate wrapped up mutually by glass, wherein SiC, SiO in Cu matrix2, the volume ratio of Cu three be 1:0.2:2, glass mutually in SiO2With K2The mol ratio of O is 2, and the size of SiC particulate is 10 μm.
The SiC that in the present embodiment, low temperature glass strengthens mutuallypThe preparation method of/Cu composite, comprises the following steps:
(1) being 23:35:3 according to ester, alcohol, the volume ratio of water three, tetraethyl orthosilicate (TEOS), α-SiC are scattered in ethanol solution, are 2 with citric acid regulating solution pH value, magnetic agitation 6 hours at 30 DEG C, making tetraethyl orthosilicate complete hydrolysis is SiO2Form colloidal sol, then be 9 by ammonia regulation solution ph, continue magnetic agitation and within 1 hour, obtain pluralgel body, vacuum filtration, forced air drying 2.5 hours under the conditions of 75 DEG C, grind and i.e. obtain by amorphous Si O2The powder body of parcel SiC；
(2) by powder body and the K of step (1)2CO3·1/2H2O ground and mixed, SiO in powder body2With K2CO3·1/2H2The mol ratio of O is 2,10MPa pressure compression molding, within 1 hour, generates glass phase at 800 DEG C of temperature lower calcinations, grinds flour, obtains being included mutually by glass the powder body of SiC after crossing 200 mesh sieves；
(3) powder body of step (2) is scattered in copper-bath, at 10 DEG C, dropping contains the suspension of reproducibility zinc powder while stirring, displacement copper, and utilize Spin precipitate to wrap up Cu granule in the powder granule surface of step (2), sucking filtration, it is vacuum dried 7 hours under the conditions of 75 DEG C, crosses 3 120 mesh sieves, obtain SiCp/ Cu composite granule；
(4) by composite granule precompressed under room temperature, 15MPa pressure of step (3), it is warming up to 550 DEG C with 20 DEG C/min, heat-insulation pressure keeping 30 minutes, then boost to 40MPa, and it is warming up to 800 DEG C of heat-insulation pressure keepings 0.5 hour, after cooling down with furnace temperature, the demoulding i.e. obtains SiCp/ Cu composite.
SiC in the present embodimentpThe porosity of/Cu composite is 2.41～4.74%, and Vickers hardness is 1.66～1.88GPa, and bending strength is 220～235MPa.
Embodiment 3
The SiC that in the present embodiment, low temperature glass strengthens mutuallyp/ Cu composite, is dispersed with the SiC particulate wrapped up mutually by glass, wherein SiC, SiO in Cu matrix2, the volume ratio of Cu three be 1:1.2:4, glass mutually in SiO2With K2The mol ratio of O is 6, and the size of SiC particulate is 10 μm.
The SiC that in the present embodiment, low temperature glass strengthens mutuallypThe preparation method of/Cu composite, comprises the following steps:
(1) being 23:35:3 according to ester, alcohol, the volume ratio of water three, tetraethyl orthosilicate (TEOS), α-SiC are scattered in ethanol solution, are 3 with citric acid regulating solution pH value, magnetic agitation 2 hours at 60 DEG C, making tetraethyl orthosilicate complete hydrolysis is SiO2Form colloidal sol, then be 11 by ammonia regulation solution ph, continue magnetic agitation and within 2 hours, obtain pluralgel body, vacuum filtration, forced air drying 1.5 hours under the conditions of 85 DEG C, grind and i.e. obtain by amorphous Si O2The powder body of parcel SiC；
(2) by powder body and the K of step (1)2CO3·1/2H2O ground and mixed, SiO in powder body2With K2CO3·1/2H2The mol ratio of O is 6,20MPa pressure compression molding, within 3 hours, generates glass phase at 760 DEG C of temperature lower calcinations, grinds flour, obtains being included mutually by glass the powder body of SiC after crossing 200 mesh sieves；
(3) powder body of step (2) is scattered in copper-bath, at 5 DEG C, dropping contains the suspension of reproducibility zinc powder while stirring, displacement copper, and utilize Spin precipitate to wrap up Cu granule in the powder granule surface of step (2), sucking filtration, it is vacuum dried 5 hours under the conditions of 85 DEG C, crosses 3 120 mesh sieves, obtain SiCp/ Cu composite granule；
(4) by composite granule precompressed under room temperature, 5MPa pressure of step (3), it is warming up to 650 DEG C with 20 DEG C/min, heat-insulation pressure keeping 10 minutes, then boost to 20MPa, and it is warming up to 700 DEG C of heat-insulation pressure keepings 2 hours, after cooling down with furnace temperature, the demoulding i.e. obtains SiCp/ Cu composite.
SiC in the present embodimentpThe porosity of/Cu composite is 4.46～6.15%, and Vickers hardness is 1.58～1.69GPa, and bending strength is 172～186MPa.
Claims (9)
1. the SiCp/Cu composite that a low temperature glass strengthens mutually, it is characterised in that: in Cu matrix, it is dispersed with the SiC particulate wrapped up mutually by glass；Its preparation method comprises the following steps:
(1) sol-gel process is used to prepare by amorphous Si O2The pluralgel body of parcel SiC, sucking filtration, dried grinding obtain by amorphous Si O2The powder body of parcel SiC；
(2) by powder body and the K of step (1)2CO3·1/2H2O ground and mixed, after compression molding, calcining generates glass phase, grind, sieve after obtain being wrapped up mutually the powder body of SiC by glass；
(3) utilize displacement reduction reaction to wrap up Cu granule in the powder granule surface of step (2), sucking filtration, sieve and i.e. obtain SiCp/Cu composite granule after drying；
(4) take the composite granule of step (3), utilize vacuum heating-press sintering method to prepare the SiCp/Cu composite that low temperature glass strengthens mutually；
Vacuum heating-press sintering method in described step (4) is: by composite granule precompressed under room temperature, 5～15MPa pressure of step (3), it is warming up to 550～650 DEG C of heat-insulation pressure keepings 10～30 minutes, boost to 20～40MPa again, it is warming up to 700～800 DEG C of heat-insulation pressure keepings 0.5～2 hours, the demoulding after cooling down with furnace temperature.
The SiCp/Cu composite that low temperature glass the most according to claim 1 strengthens mutually, it is characterised in that: described glass coordinates and is divided into SiO2And K2O, SiO2With K2The mol ratio of O is 2～6.
The SiCp/Cu composite that low temperature glass the most according to claim 2 strengthens mutually, it is characterised in that: described SiC and glass middle SiO mutually2And the volume ratio of Cu is 1:(0.2～1.2): (2～4).
4. the preparation method of the SiCp/Cu composite that the low temperature glass as described in any one of claim 1-3 strengthens mutually, it is characterised in that: comprise the following steps:
(1) sol-gel process is used to prepare by amorphous Si O2The pluralgel body of parcel SiC, sucking filtration, dried grinding obtain by amorphous Si O2The powder body of parcel SiC；
(2) by powder body and the K of step (1)2CO3·1/2H2O ground and mixed, after compression molding, calcining generates glass phase, grind, sieve after obtain being wrapped up mutually the powder body of SiC by glass；
(3) utilize displacement reduction reaction to wrap up Cu granule in the powder granule surface of step (2), sucking filtration, sieve and i.e. obtain SiCp/Cu composite granule after drying；
(4) take the composite granule of step (3), utilize vacuum heating-press sintering method to prepare the SiCp/Cu composite that low temperature glass strengthens mutually；
Vacuum heating-press sintering method in described step (4) is: by composite granule precompressed under room temperature, 5～15MPa pressure of step (3), it is warming up to 550～650 DEG C of heat-insulation pressure keepings 10～30 minutes, boost to 20～40MPa again, it is warming up to 700～800 DEG C of heat-insulation pressure keepings 0.5～2 hours, the demoulding after cooling down with furnace temperature.
The preparation method of the SiCp/Cu composite that low temperature glass the most according to claim 4 strengthens mutually, it is characterized in that: the sol-gel process in described step (1) is: tetraethyl orthosilicate (TEOS), α-SiC are scattered in ethanol solution, regulation solution ph is 2～3, stir at 30～60 DEG C, regulating solution ph again is 8～11, stirs and i.e. obtains pluralgel body.
The preparation method of the SiCp/Cu composite that low temperature glass the most according to claim 4 strengthens mutually, it is characterised in that: in described step (2), the temperature of calcining is 750～800 DEG C, and calcination time is 1～4 hour.
The preparation method of the SiCp/Cu composite that low temperature glass the most according to claim 4 strengthens mutually, it is characterized in that: the displacement reduction reaction in described step (3) is: be scattered in soluble copper saline solution by the powder body of step (2), add the suspension containing reducing metal powder while stirring, replace copper.
The preparation method of the SiCp/Cu composite that low temperature glass the most according to claim 7 strengthens mutually, it is characterised in that: described soluble copper salt is copper sulfate, copper chloride or copper nitrate.
The preparation method of the SiCp/Cu composite that low temperature glass the most according to claim 7 strengthens mutually, it is characterised in that: described reducing metal powder is zinc powder or iron powder.
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| CN107326320B (en) * | 2017-05-09 | 2019-05-14 | 华南理工大学 | A kind of high body divides SiCp/Al and bismuthate glass composite material and preparation method |
| CN110396616B (en) * | 2018-04-25 | 2020-11-20 | 比亚迪股份有限公司 | Composite material and preparation method and application thereof |
| CN109022886B (en) * | 2018-09-27 | 2020-11-24 | 太原科技大学 | SiCPPreparation method of reinforced copper-based composite material |
| CN113186416B (en) * | 2020-01-14 | 2022-06-14 | 郑州航空工业管理学院 | SiC reinforced copper-based composite material and preparation method thereof |
| CN112916867B (en) * | 2021-01-13 | 2022-01-11 | 中国科学院金属研究所 | Photocuring 3D printing nanoparticle reinforced metal piece and preparation method thereof |
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| CN1563460A (en) * | 2004-03-26 | 2005-01-12 | 哈尔滨工业大学 | SiC/Cu composite materrial and preparation material |
| CN1986491A (en) * | 2005-12-23 | 2007-06-27 | 中国科学院金属研究所 | High heat conductivity and high strength dense heterogeneous foamed SiC/Cu material and its preparing method |
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| CN1563460A (en) * | 2004-03-26 | 2005-01-12 | 哈尔滨工业大学 | SiC/Cu composite materrial and preparation material |
| CN1986491A (en) * | 2005-12-23 | 2007-06-27 | 中国科学院金属研究所 | High heat conductivity and high strength dense heterogeneous foamed SiC/Cu material and its preparing method |
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