CN104282782B - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
- Publication number
- CN104282782B CN104282782B CN201410319160.2A CN201410319160A CN104282782B CN 104282782 B CN104282782 B CN 104282782B CN 201410319160 A CN201410319160 A CN 201410319160A CN 104282782 B CN104282782 B CN 104282782B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- conductive semiconductor
- layer
- solaode
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 360
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 429
- 239000002019 doping agent Substances 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000005611 electricity Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 230000003667 anti-reflective effect Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000002161 passivation Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000027950 fever generation Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 210000003141 lower extremity Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- -1 silicon oxide nitride Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 210000000433 stratum disjunctum Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130079184A KR101622089B1 (ko) | 2013-07-05 | 2013-07-05 | 태양 전지 및 이의 제조 방법 |
KR10-2013-0079184 | 2013-07-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104282782A CN104282782A (zh) | 2015-01-14 |
CN104282782B true CN104282782B (zh) | 2016-09-14 |
Family
ID=51063246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410319160.2A Active CN104282782B (zh) | 2013-07-05 | 2014-07-04 | 太阳能电池及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10833210B2 (zh) |
EP (1) | EP2822041B1 (zh) |
JP (1) | JP6254493B2 (zh) |
KR (1) | KR101622089B1 (zh) |
CN (1) | CN104282782B (zh) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
JP6438678B2 (ja) * | 2014-05-14 | 2018-12-19 | Jxtgエネルギー株式会社 | 凹凸構造を有するフィルム部材 |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
NL2013722B1 (en) * | 2014-10-31 | 2016-10-04 | Univ Delft Tech | Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions. |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
CN105990465B (zh) * | 2015-02-03 | 2017-08-04 | 新日光能源科技股份有限公司 | 异质结硅晶太阳能电池及其制造方法 |
KR102317141B1 (ko) * | 2015-02-10 | 2021-10-22 | 엘지전자 주식회사 | 태양 전지 |
US10566483B2 (en) * | 2015-03-17 | 2020-02-18 | Lg Electronics Inc. | Solar cell |
JP6425218B2 (ja) * | 2015-03-24 | 2018-11-21 | パナソニックIpマネジメント株式会社 | 太陽電池セルの製造方法 |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
KR102373649B1 (ko) * | 2015-05-28 | 2022-03-11 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101751727B1 (ko) * | 2015-06-10 | 2017-07-11 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
CN106252458B (zh) | 2015-06-10 | 2017-12-12 | Lg电子株式会社 | 制造太阳能电池的方法 |
KR101686663B1 (ko) * | 2015-09-01 | 2016-12-14 | 금오공과대학교 산학협력단 | 후면 전극형 박막 솔라셀과 그의 제조방법 |
US20170098722A1 (en) * | 2015-10-01 | 2017-04-06 | Lg Electronics Inc. | Solar cell |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
CN106784069A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背表面隧道氧化钝化交指式背结背接触电池制作方法 |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
KR102600379B1 (ko) * | 2015-12-21 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지와 그 제조 방법 |
EP3206233A1 (en) * | 2016-02-12 | 2017-08-16 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
KR102547806B1 (ko) * | 2016-04-15 | 2023-06-28 | 오씨아이 주식회사 | 후면접합 실리콘 태양전지 제조방법 |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
KR102586115B1 (ko) * | 2016-08-10 | 2023-10-10 | 오씨아이 주식회사 | 양면 수광형 실리콘 태양전지 |
CN109844962A (zh) * | 2016-09-27 | 2019-06-04 | 松下知识产权经营株式会社 | 太阳能单电池和太阳能单电池的制造方法 |
CN106340557B (zh) * | 2016-10-08 | 2017-11-21 | 保定天威英利新能源有限公司 | 一种太阳能电池片及其组件 |
CN110073504B (zh) | 2016-11-15 | 2023-04-28 | 信越化学工业株式会社 | 高光电转换效率的太阳能电池、其制造方法、太阳能电池组件和光伏发电*** |
CN106449800B (zh) * | 2016-12-07 | 2019-04-05 | 天合光能股份有限公司 | 选择性多晶硅薄膜的钝化接触结构及其制备方法 |
CN106684160A (zh) * | 2016-12-30 | 2017-05-17 | 中国科学院微电子研究所 | 一种背结背接触太阳能电池 |
CN106653887A (zh) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | 一种背结背接触太阳能电池 |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
JP6670808B2 (ja) * | 2017-10-24 | 2020-03-25 | 信越化学工業株式会社 | 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム |
JP2019110185A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | 太陽電池の製造方法 |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
CN108649079A (zh) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | 具有钝化接触结构的指状交叉背接触太阳电池及其制备方法 |
JP2020170830A (ja) * | 2019-04-05 | 2020-10-15 | 株式会社アルバック | TOPCon−BC構造の結晶系太陽電池の製造方法、及びTOPCon−BC構造の結晶系太陽電池 |
CN113948589B (zh) * | 2020-06-30 | 2023-07-14 | 泰州隆基乐叶光伏科技有限公司 | 一种p型电池及其制作方法 |
CN114695593B (zh) * | 2020-12-30 | 2024-05-14 | 苏州阿特斯阳光电力科技有限公司 | 背接触电池的制备方法及背接触电池 |
CN116417536A (zh) * | 2021-12-29 | 2023-07-11 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制备方法 |
CN116314361A (zh) * | 2023-03-31 | 2023-06-23 | 天合光能股份有限公司 | 太阳电池及太阳电池的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102239572A (zh) * | 2008-12-04 | 2011-11-09 | 太阳能公司 | 形成有多晶硅掺杂区的背面接触太阳能电池 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5322572A (en) | 1989-11-03 | 1994-06-21 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
JP2003298078A (ja) | 2002-03-29 | 2003-10-17 | Ebara Corp | 光起電力素子 |
US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
JP2009152222A (ja) | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
DE102008030880A1 (de) * | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür |
KR20100136542A (ko) * | 2008-04-09 | 2010-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 폴리실리콘 에미터 태양전지용의 단순화된 후면 접촉부 |
US20090293948A1 (en) | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
US7851698B2 (en) | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
KR101539047B1 (ko) | 2008-12-24 | 2015-07-23 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광기전력 변환 소자 및 그의 제조방법 |
KR101142861B1 (ko) | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US8329046B2 (en) | 2009-02-05 | 2012-12-11 | Asia Union Electronic Chemical Corporation | Methods for damage etch and texturing of silicon single crystal substrates |
US20100229928A1 (en) * | 2009-03-12 | 2010-09-16 | Twin Creeks Technologies, Inc. | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element |
DE102009024807B3 (de) * | 2009-06-02 | 2010-10-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren |
US8324015B2 (en) * | 2009-12-01 | 2012-12-04 | Sunpower Corporation | Solar cell contact formation using laser ablation |
JP5334926B2 (ja) | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5974300B2 (ja) * | 2010-08-24 | 2016-08-23 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
KR20120090449A (ko) | 2011-02-08 | 2012-08-17 | 삼성전자주식회사 | 태양 전지 및 이의 제조 방법 |
US8486746B2 (en) | 2011-03-29 | 2013-07-16 | Sunpower Corporation | Thin silicon solar cell and method of manufacture |
US8658458B2 (en) | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
KR20130050721A (ko) | 2011-11-08 | 2013-05-16 | 삼성에스디아이 주식회사 | 태양 전지 |
JP2013120863A (ja) | 2011-12-08 | 2013-06-17 | Sharp Corp | 太陽電池の製造方法 |
US8785233B2 (en) * | 2012-12-19 | 2014-07-22 | Sunpower Corporation | Solar cell emitter region fabrication using silicon nano-particles |
US9530923B2 (en) * | 2012-12-21 | 2016-12-27 | Sunpower Corporation | Ion implantation of dopants for forming spatially located diffusion regions of solar cells |
-
2013
- 2013-07-05 KR KR1020130079184A patent/KR101622089B1/ko active IP Right Grant
-
2014
- 2014-07-03 EP EP14002285.6A patent/EP2822041B1/en active Active
- 2014-07-03 US US14/323,986 patent/US10833210B2/en active Active
- 2014-07-04 CN CN201410319160.2A patent/CN104282782B/zh active Active
- 2014-07-04 JP JP2014139004A patent/JP6254493B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102239572A (zh) * | 2008-12-04 | 2011-11-09 | 太阳能公司 | 形成有多晶硅掺杂区的背面接触太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
JP2015015472A (ja) | 2015-01-22 |
KR20150005834A (ko) | 2015-01-15 |
KR101622089B1 (ko) | 2016-05-18 |
CN104282782A (zh) | 2015-01-14 |
US10833210B2 (en) | 2020-11-10 |
JP6254493B2 (ja) | 2017-12-27 |
US20150007879A1 (en) | 2015-01-08 |
EP2822041B1 (en) | 2022-10-19 |
EP2822041A1 (en) | 2015-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104282782B (zh) | 太阳能电池及其制造方法 | |
CN104124302B (zh) | 太阳能电池和制造该太阳能电池的方法 | |
CN106159008B (zh) | 太阳能电池及其制造方法 | |
CN104167454B (zh) | 太阳能电池及其制造方法 | |
CN106206838B (zh) | 太阳能电池及其制造方法 | |
CN103367478B (zh) | 太阳能电池及其制造方法 | |
CN109599450A (zh) | 太阳能电池 | |
CN103390659B (zh) | 太阳能电池及其制造方法 | |
TWI449198B (zh) | Selective emitter solar cell process | |
ES2402779T3 (es) | Célula solar de película delgada y procedimiento para su fabricación | |
CN103296136A (zh) | 太阳能电池及其制造方法 | |
JP2012503330A (ja) | 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法 | |
CN102931255A (zh) | 一种背接触太阳能电池及其制造方法 | |
CN103681953A (zh) | 制造太阳能电池的方法 | |
CN107980181A (zh) | 太阳能电池单元以及太阳能电池单元的制造方法 | |
KR102085828B1 (ko) | 태양 전지 및 이의 제조 방법 | |
KR102600449B1 (ko) | 태양 전지 및 이의 제조 방법 | |
CN102569500B (zh) | 制造太阳能电池的方法 | |
TW201431108A (zh) | 指叉狀背部電極太陽能電池之製造方法及其元件 | |
TWI455335B (zh) | 背接觸式太陽能電池及其製造方法 | |
KR101122048B1 (ko) | 태양 전지 및 그 제조 방법 | |
KR102082880B1 (ko) | 태양 전지의 제조 방법 | |
CN117153924A (zh) | 太阳电池、太阳组件以及太阳电池的制备方法 | |
KR20130089051A (ko) | 후면전극형 태양전지 및 그 제조방법 | |
KR20120065535A (ko) | 태양전지 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20150114 Assignee: Hanhua thinksin Co.,Ltd. Assignor: LG ELECTRONICS Inc. Contract record no.: X2022990000645 Denomination of invention: Solar cell and method of making the same Granted publication date: 20160914 License type: Common License Record date: 20220914 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221025 Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province Patentee after: Shangrao Jingke Green Energy Technology Development Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG ELECTRONICS Inc. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee after: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Jingke Green Energy Technology Development Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |