CN104269481A - Gallium nitride diode with embedded air gaps and preparation method thereof - Google Patents
Gallium nitride diode with embedded air gaps and preparation method thereof Download PDFInfo
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- CN104269481A CN104269481A CN201410557870.9A CN201410557870A CN104269481A CN 104269481 A CN104269481 A CN 104269481A CN 201410557870 A CN201410557870 A CN 201410557870A CN 104269481 A CN104269481 A CN 104269481A
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- gallium nitride
- gan layer
- shrinkage pool
- nitride diode
- air void
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 120
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 61
- 239000010980 sapphire Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 7
- 238000001039 wet etching Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000011800 void material Substances 0.000 claims description 43
- 230000035876 healing Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 23
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a gallium nitride diode with embedded air gaps and a preparation method of the gallium nitride diode. The gallium nitride diode comprises a sapphire substrate, a u-GaN layer, an n-GaN layer, an active light-emitting layer and a p-GaN layer, wherein the upper surface of the sapphire substrate is provided with a plurality of patterns, and the patterns are distributed periodically; a concave hole which is sunken downwards is formed in the position, corresponding to each pattern, of the sapphire substrate; the concave holes enable the air gaps to be formed between the upper surface of the sapphire substrate and the lower surface of the u-GaN layer. The preparation method comprises the steps that the corresponding patterns on the upper surface of the sapphire substrate are subjected to wet etching through an ICP etching method or a high-temperature mixed acid solution, so that the positions corresponding to the patterns are sunken downwards to form the concave holes; the air gaps are formed between the sapphire substrate and the GaN layer formed by GaN epitaxial growth. According to the gallium nitride diode with the embedded air gaps and the preparation method of the gallium nitride diode, light rays emitted by the active light-emitting layer are reflected back by the air gaps, so the light rays entering the sapphire substrate are reduced, and the luminous intensity of the gallium nitride diode is enhanced.
Description
Technical field
The invention belongs to photoelectron technical field, relate to material science and light emitting semiconductor device, particularly relate to and a kind of there is gallium nitride diode of embedded air void and preparation method thereof.
Background technology
Gallium nitride diode (GaN) belongs to the one in light-emitting diode, and this gallium nitride diode green light can be used for high-brightness blue and green luminotron, and luminous intensity is its important parameter.
The structure of existing gallium nitride diode comprises the sapphire end liner, u-GaN layer, n-GaN layer, active illuminating layer and the p-GaN layer that set gradually from bottom to up
.wherein sapphire end liner adopts PSS substrate mode, wherein PSS(is the english abbreviation of Patterned Sapphire Substrate) substrate uses PSS patterned substrate to grow epitaxial wafer, also be lifting brightness the most effective the most direct method, the especially only selection of high-power and high-luminance epitaxial wafer of generally acknowledging in the industry.PSS substrate mainly through etching regularly arranged cone to realize the multiple reflections of light in substrate in substrate surface, thus reaches the lifting of the extraction efficiency of chip exterior light.PSS substrate is a kind of substrate being widely used in the GaN base LED extension of Heteroepitaxy.In this PSS substrate, the growth of GaN transfers horizontal extension to by longitudinal extension, reduces the dislocation of GaN growth to a certain extent, thus improve the epitaxial quality of GaN, decrease active illuminating layer non-radiative recombination, improve internal quantum efficiency; The light that active illuminating layer sends simultaneously is had the figure reflection of planform and scattering between PSS end liner and u-GaN layer, thus adds the probability of bright dipping, improves the extraction efficiency of light.
From the above, PSS end liner structure makes the device brightness of GaN base LED be improved to a certain extent, but its brightness does not reach optimization.Reason is: in gallium nitride diode structure, and the GaN semi-conducting material refractive index of u-GaN layer is about 2.44, and the sapphire Refractive Index of Material of sapphire end liner is about 1.76, and the refractive index of air is about 1.00029, and apparent refractive index is different.Learnt by total reflection law, when light enters into sapphire from GaN semiconductor, the critical value of the angle of total reflection is 46.2 °, when light enters into air from GaN semiconductor, the critical value of the angle of total reflection is 23.6 °, the structure of visible above-mentioned existing gallium nitride diode still old a big chunk light enters in sapphire end liner, thus cause the loss of light, be unfavorable for very much the brightness of maximized raising GaN base LED component.
Summary of the invention
The first object of the present invention is to provide a kind of gallium nitride diode with embedded air void, the wide part of this gallium nitride diode is directly directly reflected by GaN layer and air void bed boundary, decrease the light entering Sapphire Substrate, thus decrease light at the continuous reflection loss of sapphire layer, and then enhance diode go out luminous intensity.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of gallium nitride diode with embedded air void comprises the sapphire end liner, u-GaN layer, n-GaN layer, active illuminating layer and the p-GaN layer that set gradually from bottom to up, the upper surface of described sapphire end liner is provided with some figures, all described figure periodic arrangement distributions; On described sapphire end liner, each described figure corresponding position is equipped with a shrinkage pool hole to lower recess, and described shrinkage pool hole makes to form air void between the lower surface of described sapphire end liner and described u-GaN layer.
Optimal way is, each degree of depth in described shrinkage pool hole is greater than 0.5 with the ratio of width.
Optimal way is, each described shrinkage pool hole is cylindricality or cone-shaped structure.
Optimal way is, described air void is air hole structure.
Optimal way is, described shrinkage pool hole is according to cycle 0.5-10 micron spread configuration, and the gap between adjacent two described shrinkage pool holes is 1-9.5 micron.
Optimal way is, described u-GaN layer adopts MOCVD technique to grow up to resilient coating and unadulterated GaN layer from bottom to up successively.
The second object of the present invention is to provide a kind of preparation method with the gallium nitride diode of embedded air void, this preparation method makes to have air void between GaN layer and sapphire end liner, light transmitting can be gone back by this air void, reduce the light entering sapphire end liner, thus enhance the luminous intensity of diode.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of preparation method with the gallium nitride diode of embedded air void, comprises the following steps:
A, prepare figure: at top surface area one deck mask layer of described sapphire end liner, by design photo etched mask, prepare the some described figure with periods rules arranged distribution;
B, prepare shrinkage pool hole: each described figure corresponding position on described sapphire end liner, with ICP etching or high temperature mixed acid solution wet etching, each figure corresponding position is faced down on sapphire and is recessed to form shrinkage pool hole, make described sapphire end liner on prepare the some described shrinkage pool hole of periodically arranging;
C, cleaning: mask material unnecessary for the upper surface of described sapphire end liner is cleaned up removing;
D, GaN epitaxy grow: adopt the growth of MOCVD technology controlling and process GaN epitaxy, make it grow into low temperature buffer layer and unadulterated GaN layer successively, described u-GaN layer preferred growth is not provided with the exposed section in described shrinkage pool hole on described sapphire end liner;
E, formation air void: described unadulterated GaN layer is when cross growth, and interval can connect healing on the top in the described shrinkage pool hole of correspondence gradually, make the air void forming some conical closure between described u-GaN layer and described sapphire end liner upper surface;
F, formation gallium nitride diode: after described u-GaN layer healing, continuation upwards grows into n-GaN layer, active illuminating layer, p-GaN layer.
Optimal way is, each degree of depth in described shrinkage pool hole is greater than 0.5 with the ratio of width; In described step b, each described shrinkage pool hole etched has certain depth/width and compares >0.5.
Optimal way is, each described shrinkage pool hole is cylindricality or reverse tapered shape structure; In described step b, etched by ICP or high temperature mixed acid solution wet etching, prepare the described shrinkage pool hole of cylindricality or reverse tapered shape.
After adopting technique scheme, the invention has the beneficial effects as follows: due to the gallium nitride diode with embedded air void of the present invention, comprise the sapphire end liner, u-GaN layer, n-GaN layer, active illuminating layer and the p-GaN layer that set gradually from bottom to up, wherein the upper surface of sapphire end liner is provided with the figure of periodic arrangement, and on the sapphire end liner that each figure is corresponding, be equipped with a shrinkage pool hole to lower recess, all shrinkage pool holes make sapphire end liner and and GaN epitaxial layer between form closed air void.Therefore the light that sends of active illuminating layer of the present invention, directly can be reflected, thus be decreased the reflection loss of light in Sapphire Substrate inside, be enhanced luminous intensity of the present invention between GaN layer and air void interface.And the present invention is by adjusting the size of air void and periodic arrangement rule, make light directly form interference wave after reflection between GaN layer and air void interface, strengthen of the present invention go out luminous intensity, improve the brightness of light-emitting diode.
Accompanying drawing explanation
Fig. 1 is the structural representation with the gallium nitride diode of embedded air void of the present invention;
Fig. 2 is the structural representation in sapphire end liner of the present invention and shrinkage pool hole;
Fig. 3 is the structural representation that the shrinkage pool hole of sapphire end liner upper surface of the present invention and u-GaN epitaxial growth are in space state;
Fig. 4 is the structural representation that the shrinkage pool hole of sapphire end liner upper surface of the present invention and u-GaN epitaxial growth are in healing status;
In figure: 1-sapphire end liner, 2-active illuminating layer, 3-shrinkage pool hole, 4-air hole structure, u-GaN-resilient coating and undoped gallium nitride layer, n-GaN-n-type gallium nitride layer, p-GaN-p-type gallium nitride layer.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, a kind of gallium nitride diode with embedded air void, comprises the sapphire end liner 1, u-GaN layer, active illuminating layer 2, n-GaN layer and the p-GaN layer that set gradually from bottom to up.
The upper surface of sapphire end liner 1 of the present invention is provided with some figures, and all figures are according to cycle 0.5-10 micron spread configuration, and the gap between adjacent two figures is 1-9.5 micron.
The figure corresponding position of sapphire end liner 1 upper surface of the present invention, is etched by ICP or high temperature mixed acid solution wet etching and be recessed to form shrinkage pool hole 3 downwards.And be recessed to form the shrinkage pool hole 3 of cylindricality or cone-shaped structure downwards, the degree of depth in each shrinkage pool hole 3 is greater than 0.5 with the ratio of width; All shrinkage pool holes 3 are according to cycle 0.5-10 micron spread configuration, and the gap between adjacent two shrinkage pool holes 3 is 1-9.5 micron.
All shrinkage pool holes 3 of the present invention make to form air void between the lower surface of sapphire end liner 1 and u-GaN layer, and this air void is air hole structure 4.
Employing following steps preparation of the present invention:
A, prepare figure: at top surface area one deck mask layer of sapphire end liner, by design photo etched mask, prepare some figures with periods rules arranged distribution;
B, prepare shrinkage pool hole: each figure corresponding position on institute's jewel end liner, with ICP etching or high temperature mixed acid solution wet etching, each figure corresponding position is faced down on sapphire and is recessed to form the shrinkage pool hole of cylindricality or reverse tapered shape, and each shrinkage pool hole etched has certain depth/width makes sapphire than >0.5; All shrinkage pool holes that sapphire end liner is prepared are according to cycle 0.5-10 micron spread configuration, and the gap between adjacent two shrinkage pool holes 3 is 1-9.5 micron;
C, cleaning: mask material unnecessary for the upper surface of sapphire end liner is cleaned up removing;
D, GaN epitaxy grow: adopt the growth of MOCVD technology controlling and process GaN epitaxy, make it grow into low temperature buffer layer and unadulterated GaN layer successively, this u-GaN layer growth is not provided with the exposed section in shrinkage pool hole on sapphire end liner;
E, formation air void: unadulterated GaN layer is when cross growth, interval can connect healing on the top in institute's shrinkage pool hole of correspondence gradually, make the air void forming some conical closure between u-GaN layer and sapphire end liner upper surface, this air void is air hole structure;
F, formation gallium nitride diode: after described u-GaN layer healing, continuation upwards grows into n-GaN layer, active illuminating layer, p-GaN layer.
The gallium nitride diode of prepared by the present embodiment method have embedded air void, the light that active illuminating layer 2 sends, directly can be reflected between GaN layer and air void interface, thus be decreased the reflection loss of light in Sapphire Substrate 1 inside, be enhanced luminous intensity of the present invention.And the present invention is by adjusting the size of air void and periodic arrangement rule, make light directly form interference wave after reflection between GaN layer and air void interface, strengthen of the present invention go out luminous intensity.
In prior art, u-GaN layer is that resilient coating and layer of undoped gan are called for short, n-GaN is that n-type gallium nitride layer is called for short, p-GaN is that p-type gallium nitride layer is called for short, resilient coating is aluminum nitride buffer layer, and MOCVD is the english abbreviation of metallorganic chemical vapor deposition (Metal-organic Chemical Vapor DePosition).In order above to grow in single crystalline substrate (substrate), one deck has certain requirements, the single crystalline layer identical with Substrate orientation in epitaxial growth, has stretched out one section, therefore claim epitaxial growth just as original crystal.
The above preferred embodiment of the present invention; not in order to limit the present invention; all any amendments done within the spirit and principles in the present invention, etc. same there is the improvement etc. of the gallium nitride diode structure of embedded air void, all should be included within protection scope of the present invention.
Claims (9)
1. there is the gallium nitride diode of embedded air void, comprise the sapphire end liner, u-GaN layer, n-GaN layer, active illuminating layer and the p-GaN layer that set gradually from bottom to up, it is characterized in that, the upper surface of described sapphire end liner is provided with some figures, all described figure periodic arrangement distributions; On described sapphire end liner, each described figure corresponding position is equipped with a shrinkage pool hole to lower recess, and described shrinkage pool hole makes to form air void between the lower surface of described sapphire end liner and described u-GaN layer.
2. have the gallium nitride diode of embedded air void according to claim 1, it is characterized in that, each degree of depth in described shrinkage pool hole is greater than 0.5 with the ratio of width.
3. the gallium nitride diode with embedded air void according to claim 2, is characterized in that, each described shrinkage pool hole is cylindricality or reverse tapered shape structure.
4. the gallium nitride diode with embedded air void according to claim 3, is characterized in that, described air void is air hole structure.
5. the gallium nitride diode with embedded air void according to any one of claim 1-4, is characterized in that, described shrinkage pool hole is according to cycle 0.5-10 micron spread configuration, and the gap between adjacent two described shrinkage pool holes is 1-9.5 micron.
6. the gallium nitride diode with embedded air void according to claim 4, is characterized in that, described u-GaN layer adopts MOCVD technique to grow up to resilient coating and unadulterated GaN layer from bottom to up successively.
7. a preparation method with the gallium nitride diode of embedded air void according to claim 1, is characterized in that, comprise the following steps:
A, prepare figure: at top surface area one deck mask layer of described sapphire end liner, by design photo etched mask, prepare the some described figure with periods rules arranged distribution;
B, prepare shrinkage pool hole: each described figure corresponding position on described sapphire end liner, with ICP etching or high temperature mixed acid solution wet etching, each figure is in sapphire faces down to be recessed to form shrinkage pool hole, make described sapphire end liner on prepare the some described shrinkage pool hole of periodically arranging;
C, cleaning: mask material unnecessary for the upper surface of described sapphire end liner is cleaned up removing;
D, GaN epitaxy grow: adopt the growth of MOCVD technology controlling and process GaN epitaxy, make it grow into low temperature buffer layer and unadulterated GaN layer successively, described u-GaN layer preferred growth is not provided with the exposed section in described shrinkage pool hole on described sapphire end liner;
E, formation air void: described unadulterated GaN layer is when cross growth, and interval can connect healing on the top in the described shrinkage pool hole of correspondence gradually, make the air void forming some conical closure between described u-GaN layer and described sapphire end liner upper surface;
F, formation gallium nitride diode: after described u-GaN layer healing, continuation upwards grows into n-GaN layer, active illuminating layer, p-GaN layer.
8. the preparation method with the gallium nitride diode of embedded air void according to claim 7, is characterized in that, each degree of depth in described shrinkage pool hole is greater than 0.5 with the ratio of width; In described step b, each described shrinkage pool hole etched has certain depth/width and compares >0.5.
9. the preparation method with the gallium nitride diode of embedded air void according to claim 8, is characterized in that, each described shrinkage pool hole is cylindricality or reverse tapered shape structure; In described step b, etched by ICP or high temperature mixed acid solution wet etching, prepare the described shrinkage pool hole of cylindricality or reverse tapered shape.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952996A (en) * | 2015-07-10 | 2015-09-30 | 厦门市三安光电科技有限公司 | LED manufacture method |
| CN109378367A (en) * | 2018-10-30 | 2019-02-22 | 广东工业大学 | A kind of light emitting diode and preparation method thereof |
| CN110190163A (en) * | 2019-05-24 | 2019-08-30 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, production method, storage medium and LED chip |
| CN111133592A (en) * | 2017-07-14 | 2020-05-08 | 旭硝子欧洲玻璃公司 | Light emitting device with anti-reflective silicon carbide or sapphire substrate and method of forming the same |
| CN111864019A (en) * | 2020-07-10 | 2020-10-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
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| CN1588640A (en) * | 2004-08-19 | 2005-03-02 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
| CN102034907A (en) * | 2009-09-28 | 2011-04-27 | 上海宇体光电有限公司 | Graph masking method for improving luminous efficiency of GaN base LED (light-emitting diode) |
| CN103165771A (en) * | 2013-03-28 | 2013-06-19 | 天津三安光电有限公司 | Nitride bottom layer with embedded hole structure and preparation method of nitride bottom layer |
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2014
- 2014-10-21 CN CN201410557870.9A patent/CN104269481A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1588640A (en) * | 2004-08-19 | 2005-03-02 | 中国科学院物理研究所 | Method for preparing high quality GaN base material on specific saphire pattern substrate |
| CN102034907A (en) * | 2009-09-28 | 2011-04-27 | 上海宇体光电有限公司 | Graph masking method for improving luminous efficiency of GaN base LED (light-emitting diode) |
| CN103165771A (en) * | 2013-03-28 | 2013-06-19 | 天津三安光电有限公司 | Nitride bottom layer with embedded hole structure and preparation method of nitride bottom layer |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952996A (en) * | 2015-07-10 | 2015-09-30 | 厦门市三安光电科技有限公司 | LED manufacture method |
| CN104952996B (en) * | 2015-07-10 | 2017-11-17 | 厦门市三安光电科技有限公司 | A kind of preparation method of light emitting diode |
| CN111133592A (en) * | 2017-07-14 | 2020-05-08 | 旭硝子欧洲玻璃公司 | Light emitting device with anti-reflective silicon carbide or sapphire substrate and method of forming the same |
| CN109378367A (en) * | 2018-10-30 | 2019-02-22 | 广东工业大学 | A kind of light emitting diode and preparation method thereof |
| CN110190163A (en) * | 2019-05-24 | 2019-08-30 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, production method, storage medium and LED chip |
| CN110190163B (en) * | 2019-05-24 | 2020-04-28 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, manufacturing method, storage medium and LED chip |
| CN111864019A (en) * | 2020-07-10 | 2020-10-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
| CN111864019B (en) * | 2020-07-10 | 2021-11-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
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Address after: 261031 Weifang province high tech Zone in the north of the Qing Ming Street, Silver Maple Road, west of the West Park, third accelerator West accelerator Applicant after: Shandong Au Optronics Co Address before: 261031 Weifang province high tech Zone in the north of the Qing Ming Street, Silver Maple Road, west of the West Park, third accelerator West accelerator Applicant before: "SHANDONG NOVOSHINE PHOTOELECTRIC CO., LTD." |
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Application publication date: 20150107 |