CN104269045A - Infrared remote transmitter - Google Patents
Infrared remote transmitter Download PDFInfo
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- CN104269045A CN104269045A CN201410566772.1A CN201410566772A CN104269045A CN 104269045 A CN104269045 A CN 104269045A CN 201410566772 A CN201410566772 A CN 201410566772A CN 104269045 A CN104269045 A CN 104269045A
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- resistance
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- shot multivibrator
- light emitting
- triode
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Abstract
The invention discloses an infrared remote transmitter. The infrared remote transmitter comprises a battery, a switch, a touch switch, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first light emitting diode, a second light emitting diode, a third light emitting diode, a first triode, a second triode, a first capacitor, a second capacitor, an insulated gate field effect transistor, a potentiometer and a monostate multi-vibrator CD4047. According to the invention, electricity loss is reduced to the most extent through the adoption of the insulated gate field effect transistor, and the radiation efficiency is improved through the adoption of the three light emitting diodes, so that remote control is realized. The infrared remote transmitter is high in sensitivity, simple in circuit structure, few in elements, low in cost and favorable to popularization.
Description
Technical field
The present invention relates to a kind of wireless transmitting device, particularly relate to a kind of infrared ray distance transmission device.
Background technology
Infrared transmitter is a kind of remote control equipment, there is distant control function, the inner wave mode signal being produced certain rule by Single-chip Controlling of infrared transmitter, drive infrared ray to penetrate pipe and produce infrared signal, thus reach the effect of control signal, the fields such as infrared ray receiving-transmitting device, data transmission technology such as be widely used in consumer electronic services, commercial production and communicate.But much infrared transmitter sensitivity distance that is low, that realize is short, and circuit structure is complicated, element is many, cost is high, is difficult to universal and promotes.
Summary of the invention
Object of the present invention is just to provide a kind of infrared ray distance transmission device to solve the problem.
The present invention is achieved through the following technical solutions above-mentioned purpose:
The present invention includes battery, switch, tact switch, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, first light emitting diode, second light emitting diode, 3rd light emitting diode, first triode, second triode, first electric capacity, second electric capacity, isolated gate FET, potentiometer and model are the one shot multivibrator of CD4047, and the positive pole of described battery connects the first end of described switch, the second end of described switch simultaneously with the first end of described second electric capacity, the first end of described 4th resistance, the collector of described first triode is connected with the first end of described 5th resistance, second end of described 4th resistance connects the positive pole of described first light emitting diode, the negative pole of described first light emitting diode connects the positive pole of described second light emitting diode, the negative pole of described second light emitting diode connects the positive pole of described 3rd light emitting diode, the negative pole of described 3rd light emitting diode connects the drain electrode of described isolated gate FET, the grid of described isolated gate FET is connected with the emitter-base bandgap grading of described first triode and the emitter-base bandgap grading of described second triode simultaneously, with the base stage of described second triode while of the base stage of described first triode, the first end of described 3rd resistance is connected with the tenth pin of described one shot multivibrator, the second end of described 5th resistance simultaneously with the 8th pin of described one shot multivibrator, 6th pin of described one shot multivibrator, 14 pin of described one shot multivibrator is connected with the first end of described tact switch, second end of described tact switch is connected with the 5th pin of described one shot multivibrator and the first end of described second resistance simultaneously, second pin of described one shot multivibrator connects the first end of described first resistance, second end of described first resistance connects the first end of described potentiometer, the second end of described potentiometer simultaneously with the sliding end of described potentiometer, the first end of described first electric capacity is connected with the 3rd pin of described one shot multivibrator, the 12 pin of described one shot multivibrator simultaneously with the second end of described 3rd resistance, the collector of described second triode, 9th pin of described one shot multivibrator, 8th pin of described one shot multivibrator, 7th pin of described one shot multivibrator, the source electrode of described isolated gate FET, second end of described second electric capacity, second end of described second resistance is connected with the negative pole of described battery.
Beneficial effect of the present invention is:
The present invention adopts an isolated gate FET, decreases power loss to greatest extent, adopts three light emitting diodes, improve radiation power, thus realize far distance controlled, and the present invention is highly sensitive, circuit structure is simple, element is few, cost is low, is conducive to universal and promotes.
Accompanying drawing explanation
Fig. 1 is circuit structure schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
As shown in Figure 1: the present invention includes battery E, K switch, tact switch S, first resistance R1, second resistance R2, 3rd resistance R3, 4th resistance R4, 5th resistance R5, first LED 1, second LED 2, 3rd LED 3, first triode VT1, second triode VT2, first electric capacity C1, second electric capacity C2, isolated gate FET Q, potentiometer RP and model are the first end of the positive pole connecting valve K of the one shot multivibrator IC of CD4047, battery E, the second end of K switch simultaneously with the first end of the second electric capacity C2, the first end of the 4th resistance R4, the collector of the first triode VT1 is connected with the first end of the 5th resistance R5, second end of the 4th resistance R4 connects the positive pole of the first LED 1, the negative pole of the first LED 1 connects the positive pole of the second LED 2, the negative pole of the second LED 2 connects the positive pole of the 3rd LED 3, the negative pole of the 3rd LED 3 connects the drain electrode of isolated gate FET Q, the grid of isolated gate FET Q is connected with the emitter-base bandgap grading of the first triode VT1 and the emitter-base bandgap grading of the second triode VT2 simultaneously, with the base stage of the second triode VT2 while of the base stage of the first triode VT1, the first end of the 3rd resistance R3 is connected with the tenth pin of one shot multivibrator IC, second end of the 5th resistance R5 simultaneously with the 8th pin of one shot multivibrator IC, 6th pin of one shot multivibrator IC, 14 pin of one shot multivibrator IC is connected with the first end of tact switch S, second end of tact switch S is connected with the 5th pin of one shot multivibrator IC and the first end of the second resistance R2 simultaneously, second pin of one shot multivibrator IC connects the first end of the first resistance R1, second end of the first resistance R1 connects the first end of potentiometer RP, second end of potentiometer RP simultaneously with the sliding end of potentiometer RP, the first end of the first electric capacity C1 is connected with the 3rd pin of one shot multivibrator IC, the 12 pin of one shot multivibrator IC simultaneously with second end of the 3rd resistance R3, the collector of the second triode VT2, 9th pin of one shot multivibrator IC, 8th pin of one shot multivibrator IC, 7th pin of one shot multivibrator IC, the source electrode of isolated gate FET Q, second end of the second electric capacity C2, second end of the second resistance R2 is connected with the negative pole of battery E.
Principle of work of the present invention:
As shown in Figure 1: the present invention adopts an isolated gate FET Q, power loss can be reduced to greatest extent, it is connected on the emitter-base bandgap grading of the first triode VT1 and the second triode VT2, the raster data model input distortion of isolated gate FET Q can be prevented, adopt three light emitting diodes, to improve radiation power, realize remotely-controlled object.
Claims (1)
1. an infrared ray distance transmission device, is characterized in that: comprise battery, switch, tact switch, first resistance, second resistance, 3rd resistance, 4th resistance, 5th resistance, first light emitting diode, second light emitting diode, 3rd light emitting diode, first triode, second triode, first electric capacity, second electric capacity, isolated gate FET, potentiometer and model are the one shot multivibrator of CD4047, and the positive pole of described battery connects the first end of described switch, the second end of described switch simultaneously with the first end of described second electric capacity, the first end of described 4th resistance, the collector of described first triode is connected with the first end of described 5th resistance, second end of described 4th resistance connects the positive pole of described first light emitting diode, the negative pole of described first light emitting diode connects the positive pole of described second light emitting diode, the negative pole of described second light emitting diode connects the positive pole of described 3rd light emitting diode, the negative pole of described 3rd light emitting diode connects the drain electrode of described isolated gate FET, the grid of described isolated gate FET is connected with the emitter-base bandgap grading of described first triode and the emitter-base bandgap grading of described second triode simultaneously, with the base stage of described second triode while of the base stage of described first triode, the first end of described 3rd resistance is connected with the tenth pin of described one shot multivibrator, the second end of described 5th resistance simultaneously with the 8th pin of described one shot multivibrator, 6th pin of described one shot multivibrator, 14 pin of described one shot multivibrator is connected with the first end of described tact switch, second end of described tact switch is connected with the 5th pin of described one shot multivibrator and the first end of described second resistance simultaneously, second pin of described one shot multivibrator connects the first end of described first resistance, second end of described first resistance connects the first end of described potentiometer, the second end of described potentiometer simultaneously with the sliding end of described potentiometer, the first end of described first electric capacity is connected with the 3rd pin of described one shot multivibrator, the 12 pin of described one shot multivibrator simultaneously with the second end of described 3rd resistance, the collector of described second triode, 9th pin of described one shot multivibrator, 8th pin of described one shot multivibrator, 7th pin of described one shot multivibrator, the source electrode of described isolated gate FET, second end of described second electric capacity, second end of described second resistance is connected with the negative pole of described battery.
Priority Applications (1)
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CN201410566772.1A CN104269045A (en) | 2014-10-21 | 2014-10-21 | Infrared remote transmitter |
Applications Claiming Priority (1)
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CN201410566772.1A CN104269045A (en) | 2014-10-21 | 2014-10-21 | Infrared remote transmitter |
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CN104269045A true CN104269045A (en) | 2015-01-07 |
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CN201410566772.1A Pending CN104269045A (en) | 2014-10-21 | 2014-10-21 | Infrared remote transmitter |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60259984A (en) * | 1984-06-06 | 1985-12-23 | Matsushita Electric Ind Co Ltd | Control apparatus |
CN202472914U (en) * | 2012-03-18 | 2012-10-03 | 宁永敭 | Single-wave and double-code, double-wave and double-code remote control transmitter |
CN203788295U (en) * | 2014-02-25 | 2014-08-20 | 中山市高集电子有限公司 | Infrared emitting device capable of realizing remote transmission |
CN204178549U (en) * | 2014-10-21 | 2015-02-25 | 四川鑫远志空间信息科技有限公司 | A kind of infrared ray distance transmission device |
-
2014
- 2014-10-21 CN CN201410566772.1A patent/CN104269045A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60259984A (en) * | 1984-06-06 | 1985-12-23 | Matsushita Electric Ind Co Ltd | Control apparatus |
CN202472914U (en) * | 2012-03-18 | 2012-10-03 | 宁永敭 | Single-wave and double-code, double-wave and double-code remote control transmitter |
CN203788295U (en) * | 2014-02-25 | 2014-08-20 | 中山市高集电子有限公司 | Infrared emitting device capable of realizing remote transmission |
CN204178549U (en) * | 2014-10-21 | 2015-02-25 | 四川鑫远志空间信息科技有限公司 | A kind of infrared ray distance transmission device |
Non-Patent Citations (1)
Title |
---|
超毅电子: "长距离的红外线发射器的电路图", 《HTTP://WWW.CHAOYI1688.COM/ARTICLE/055_1.HTML》 * |
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Application publication date: 20150107 |
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