CN104266960B - Scan-type microwave reflection carrier recombination lifetime test system and method for testing - Google Patents
Scan-type microwave reflection carrier recombination lifetime test system and method for testing Download PDFInfo
- Publication number
- CN104266960B CN104266960B CN201410528794.9A CN201410528794A CN104266960B CN 104266960 B CN104266960 B CN 104266960B CN 201410528794 A CN201410528794 A CN 201410528794A CN 104266960 B CN104266960 B CN 104266960B
- Authority
- CN
- China
- Prior art keywords
- control system
- motion
- microwave
- test
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of scan-type microwave reflection carrier recombination lifetime test system and method for testing, the test system includes pulse laser system, microwave system, data collecting system, scanning motion system, kinetic control system, test control system and probe, scanning motion system is used to probe carrying out three-dimensional localization, kinetic control system is connected with scanning motion system, test control system respectively, for according to test control system order-driven scanning motion system acting;Pulse laser system, microwave system are arranged in probe, and microwave system is connected with data collecting system, and data collecting system is connected with test control system.Pulse laser system produces the infrared laser of pulsed, sample surface of the central aperture vertical irradiation of microstrip antenna on sample stage through in microwave system.The present invention can carry out the scanning measurement of carrier lifetime distribution situation to the semiconductor crystalline material of large area, and structure is compacter, and probe size is small.
Description
Technical field
The present invention relates to carrier recombination lifetime tester research field, more particularly to a kind of scan-type microwave reflection is carried
Flow sub- recombination lifetime test system and method for testing.
Background technology
In the production process of semi-conducting material and device, used production equipment nearly all contains metal, therefore, weight
Pollution of the metal (mainly iron) to semi-conducting material is common problem, has a strong impact on the property of semiconductor crystalline material
Energy.Carrier recombination lifetime is to evaluate one of good and bad important parameter index of semiconductor material performance, and it can delicately reflect
Go out the number of content of beary metal, therefore, carrier recombination lifetime tester is semiconductor silicon single crystal, casting polycrystalline enterprise, photovoltaic
Important tool in enterprise, institution of higher learning's research and production.
Existing a variety of carrier recombination lifetime testers at present, the photoconductive life-span tester of such as high frequency, microwave reflection without
Contact life tester, quasi-steady state photoconduction minority carrier lifetime tester etc..But it is most of in these above-mentioned life-span testers
The regional area of semiconductor crystalline material can only be tested, it is impossible to monoblock (ingot) or the load of full wafer semiconductor crystalline material
The distribution situation for flowing the sub- life-span is measured, and the measurement area of semiconductor crystalline material more it is big then more can more it is complete more realistically
Reflect the quality of material.
Accordingly, it is desirable to provide a kind of for large-scale semiconductor testing of materials, the current-carrying that cost is relatively low and easy to maintenance
Sub- recombination lifetime scan test system.
The content of the invention
It is a primary object of the present invention to the shortcoming and deficiency for overcoming prior art, there is provided a kind of scan-type microwave reflection
Carrier recombination lifetime test system, the system can realize that the carrier recombination lifetime distribution of large-scale semiconductor material is surveyed
Amount, overall performance that is more directly perceived and reflecting material exactly, while having the advantages that cost is low.
It is a kind of based on the survey of above-mentioned scan-type microwave reflection carrier recombination lifetime another object of the present invention is to provide
The method of testing of test system, this method has the advantages that accurate positioning, easy to control.
The purpose of the present invention is realized by following technical scheme:Scan-type microwave reflection carrier recombination lifetime is tested
System, including pulse laser system, microwave system, data collecting system, scanning motion system, kinetic control system, test control
System processed and probe, the scanning motion system include X-axis motion, Y-axis motion, Z axis motion, and sample stage is set
Put on Y-axis motion, Z axis motion is fixed on the side of Y-axis motion, X-axis motion passes through probe bracket
It is arranged on Z axis motion, probe is arranged on X-axis motion, probe is positioned at the top of sample stage;The motion control
System is connected with scanning motion system, test control system respectively, for according to test control system order-driven scanning motion
System acting;Pulse laser system, microwave system are arranged in probe, and microwave system is connected with data collecting system, data
Acquisition system is connected with test control system.By increasing kinetic control system and scanning motion system, so as to big face
Long-pending semi-conducting material is scanned formula test, obtains the results of property of more accurately material.
It is preferred that, the microstrip antenna in the microwave system uses polytetrafluoroethylene (PTFE) double face copper, including bottom copper foil
Plate, polyfluortetraethylene plate, upper copper plate, bottom copper foil plate form a transmission for being used for microwave signal and reception through corroding
Circle ring area, opens up loophole, in annulus in the polyfluortetraethylene plate and upper copper plate of the inner circle loop section of circle ring area
Edge extends a long 3.8-6.5mm, and wide 0.9-1.8mm copper strips is as the connecting line of coaxial feeder, and polytetrafluoroethylene (PTFE) is two-sided
Copper-clad plate is provided with a through hole in the connecting line end, and coaxial feeder is directly welded by this through hole with connecting line.
Further, the size of the polytetrafluoroethylene (PTFE) double face copper is long 20-25mm, wide 15-20mm, high 2-
6mm, two-sided is that thickness covers copper face for 0.01~0.1mm respectively.
It is preferred that, the pulse laser system produces the infrared laser of pulsed, the microstrip antenna through in microwave system
Sample surface of the central aperture vertical irradiation on sample stage.Compared with pulse light casts oblique rays on mode, so greatly contract
The volume of small probe.Sample described here specifically refers to be placed on the crystal samples to be measured on sample stage.
It is preferred that, the X-axis motion, Y-axis motion, Z axis motion respectively include a brush DC
Servomotor and a ball-screw guide rail, each direct current brushless servo motor are respectively connected with kinetic control system.
It is preferred that, the kinetic control system includes motion controller and 3 servo-drivers, every servo-driver point
It is not connected with a direct current brushless servo motor, motion controller is connected with test control system, for according to testing and control system
The movement instruction of system exports umber of pulse, direction, velocity information to servo-driver, and servo driver drives correspondence brush DC is watched
Take motor movement.
Further, pulse coder is designed with each direct current brushless servo motor, the pulse coder
It is connected with motion controller.The pulse coder is used to produce pulse in motor movement, and these pulses are sent into motion
Actual pulse number and the umber of pulse of setting are compared by controller, motion controller, then realize closed-loop control, improve positioning
Precision.
It is preferred that, the sample stage is provided with below adsorption hole, the adsorption hole and is connected with vacuum and negative pressure pump.Sample is placed into
After on the sample stage, vacuum and negative pressure pump is opened, testing sample can be fixed by the adsorption hole.
It is preferred that, the scan-type microwave reflection carrier recombination lifetime test system is integrally provided in a mainframe box
Interior, Y-axis motion is located on mainframe box bottom plate, and Z axis motion is located on mainframe box backboard.
A kind of method of testing based on above-mentioned scan-type microwave reflection carrier recombination lifetime test system, including step
Suddenly:
(1) probe is in initialized location;
(2) the point position coordinates tested the need for test control system is inputted according to user, transmits a signal to motion control
System, kinetic control system sends umber of pulse, direction, velocity information to scanning motion system, and scanning motion system is according to above-mentioned
Information control probe carries out X, Y, Z axis three-dimensional motion, is positioned on the point position for needing to test;
(3) pulse laser system produces the infrared laser of pulsed, through the central aperture of the microstrip antenna of microwave system
Vertical irradiation is on sample, and microwave signal is transmitted on sample by microwave system by microstrip antenna, while micro-strip
Antenna receives microwave reflection signal, and ring detector of the microwave reflection signal through microwave system detects and be input to data acquisition system
The broad band amplifier input of system, is translated into data signal and is sent to test control system preservation after amplification;
(4) test control system judges whether also next point position for needing to test, if so, then performing step
(2), otherwise test control system carries out statistical analysis to the signal of preservation, externally output carrier recombination lifetime result of calculation,
And control probe to playback.
It is preferred that, direct current brushless servo motor, each brush DC servo electricity are used in the scanning motion system
Pulse coder is designed with machine, when direct current brushless servo motor is moved, pulse coder produces pulse, these pulse feedbacks
To motion controller, motion controller is counted to these pulses, and in real time by currently practical umber of pulse and the arteries and veins of setting
Rush number to be compared, motion compensation is carried out once there is gap.It is accurately positioned so as to realize.
The present invention compared with prior art, has the following advantages that and beneficial effect:
1st, the present invention is directed to the semiconductor crystalline material of large area, is realized by kinetic control system and scanning motion system
The scanning measurement of carrier lifetime distribution situation so that acquired results are more complete, true.
2nd, scanning motion system uses high performance direct current brushless servo motor and high-precision ball-screw in the present invention
Guide rail, carries out Distributed Scans test position fix, can obtain full wafer or the semi-conducting material carrier recombination lifetime point of large area
Butut.
3rd, pulse laser system produces the infrared laser of pulsed in the present invention, through in microwave system in microstrip antenna
Between sample surface of the perforate vertical irradiation on sample stage.Light efficiency is improved, while make sonde configuration compacter,
Reduce probe size.
4th, the present invention can adjust probe height by scanning motion system, so as to quickly realize to different-thickness
Semi-conducting material test.
Brief description of the drawings
Fig. 1 is operation principle schematic diagram of the invention;
Fig. 2 is the structural representation of scanning motion system in the present invention;
Fig. 3 is the structural representation of microstrip antenna in the present invention;
Fig. 4 is pulse laser system and the principle schematic diagram of microstrip antenna in the present invention.
In Fig. 2-4,1-circle ring area;2-through hole;3-polyfluortetraethylene plate;4-upper copper plate;5-pulse laser
Light source;6-coaxial feeder;7-microstrip antenna;8-sample;9-sample stage;10-mainframe box backboard;11-mainframe box bottom plate;
12-X-axis motion;13-Y-axis motion;14-Z axis motion;15-probe;16-probe bracket.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited
In this.
Embodiment 1
Carrier recombination lifetime test of the present invention is that, using microwave reflection test, the principle of this method foundation is:Pulse
The infrared laser of formula is radiated on sample, causes the photoconduction change of sample, and microwave system is sent out by microstrip antenna
Penetrate and receive microwave reflection signal, the photoconduction change of sample is directly proportional in certain limit to the reflection power of microwave,
The decline curve of microwave reflection power just reflects photoconductivity decay curve, just can be with from the decline curve of microwave reflection power
Calculate carrier recombination lifetime.
Structure composition such as Fig. 1 of scan-type microwave reflection carrier recombination lifetime test system described in the present embodiment, 4
It is shown, including pulse laser system, microwave system, data collecting system, test control system, scanning motion system, motion control
System processed and probe 15, testing sample 8 is placed on sample stage 9, during detection, and probe 15 is located at the top of sample stage 9.The fortune
Autocontrol system is connected with scanning motion system, test control system respectively;Pulse laser system, microwave system are arranged at spy
In first 15, microwave system is connected with data collecting system.Pulse laser system produces the infrared laser of pulsed, through microwave system
The central aperture vertical irradiation of the microstrip antenna 7 of system is on sample;Microwave system is launched by microstrip antenna and receives micro-
Ripple signal, is detected by its circumferential wave device and transmits a signal to data collecting system;Scanning motion system realizes the test of probe
Point location, often positions and is once tested;Kinetic control system sends positioning instruction to scanning motion system, and passes through arteries and veins
The location information of encoder receiving transducer is rushed, test point is monitored, position error is prevented;Data collecting system is used to gather
Microwave reflection signal, and be converted into data signal after the signal is amplified through broad band amplifier and be sent to test control system.Survey
Try control system and on the one hand send movement instruction to kinetic control system, analysis calculating, output are on the one hand carried out to test data
Test result.In actual use, existing computer equipment can be combined, various measurement schemes is realized to multimetering and will survey
Result is measured to export in distribution map form.
As shown in Fig. 2 scanning motion system includes X-axis motion 12, Y-axis motion 13, Z axis motion 14;
Wherein X-axis, Y-axis, Z axis motion include a direct current brushless servo motor and a high precision ball lead screw guide rails;Institute
State Y-axis motion 13 to be located on mainframe box bottom plate 11, sample stage is located above Y-axis motion 13, before and after can carrying out Y-direction
Motion, while sample stage is provided with adsorption hole, testing sample can be fixed after installing vacuum and negative pressure pump;Z axis motion 14 is located at
On mainframe box backboard 10, probe bracket 16 is located on Z axis motion 14, and X-axis motion 12 is located on probe bracket 16, with
Z axis motion 14 is mutually perpendicular to, and whole X-axis motion 12 can carry out Z-direction up and down motion;Probe is located at X-axis fitness machine
On structure 12, X-direction side-to-side movement can be carried out.
As shown in figure 3, the microstrip antenna 7 uses polytetrafluoroethylene (PTFE) double face copper, specifically include bottom copper foil plate, gather
Tetrafluoroethene plate 3, upper copper plate 4, bottom copper foil plate form a circle ring area 1, the transmission for microwave signal through corrosion
With reception, the polytetrafluoroethylene (PTFE) and upper copper plate for corroding into the inner circle loop section of annulus are opened loophole, prolonged at the edge of annulus
A long 3.8-6.5mm is stretched, wide 0.9-1.8mm copper strips is used as the connecting line of coaxial feeder 6, polytetrafluoroethylene (PTFE) double face copper
A through hole 2 is provided with the connecting line end, coaxial feeder 6 is directly welded by this through hole 2 with connecting line.It is poly- in the present embodiment
The size of tetrafluoroethene double face copper is long 20-25mm, wide 15-20mm, high 2-6mm, it is two-sided be thickness respectively for 0.01~
0.1mm's covers copper face.
In measurement, the position relationship of pulsed laser light source 5 in pulse laser system and microstrip antenna 7 as shown in figure 4,
Pulsed laser light source 5 produces the infrared laser of pulsed, and the central aperture vertical irradiation of microstrip antenna 7 exists through in microwave system
Sample surface on sample stage.
The method of testing of scan-type microwave reflection carrier recombination lifetime test system described in the present embodiment, including step
Suddenly:
(1) probe is in initialized location;
(2) the point position coordinates tested the need for test control system is inputted according to user, transmits a signal to motion control
System, kinetic control system sends umber of pulse, direction, velocity information to scanning motion system, and scanning motion system is according to above-mentioned
Information control probe carries out X, Y, Z axis three-dimensional motion, is positioned on the point position for needing to test;
(3) pulse laser system produces the infrared laser of pulsed, through the central aperture of the microstrip antenna of microwave system
Vertical irradiation is on sample, and microwave signal is transmitted on sample by microwave system by microstrip antenna, while micro-strip
Antenna receives microwave reflection signal, and ring detector of the microwave reflection signal through microwave system detects and be input to data acquisition system
The broad band amplifier input of system, is translated into data signal and is sent to test control system preservation after amplification;
(4) test control system judges whether also next point position for needing to test, if so, then performing step
(2), otherwise test control system carries out statistical analysis to the signal of preservation, externally output carrier recombination lifetime result of calculation,
And control probe to playback.
Use and set at direct current brushless servo motor, each direct current brushless servo motor in the scanning motion system
There is pulse coder, when direct current brushless servo motor is moved, pulse coder produces pulse, and these pulse feedbacks are controlled to motion
Device processed, motion controller is counted to these pulses, and in real time carries out currently practical umber of pulse and the umber of pulse of setting
Compare, motion compensation is carried out once there is gap.It is accurately positioned so as to realize.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (6)
1. scan-type microwave reflection carrier recombination lifetime test system, it is characterised in that including pulse laser system, microwave
System, data collecting system, scanning motion system, kinetic control system, test control system and probe, the scanning motion system
System includes X-axis motion, Y-axis motion, Z axis motion, and sample stage is arranged on Y-axis motion, Z axis fitness machine
Structure is fixed on the side of Y-axis motion, and X-axis motion is arranged on Z axis motion by probe bracket, and probe is set
On X-axis motion, probe is positioned at the top of sample stage;The kinetic control system respectively with scanning motion system, test
Control system is connected, for according to test control system order-driven scanning motion system acting;Pulse laser system, microwave system
System is arranged in probe, and microwave system is connected with data collecting system, and data collecting system is connected with test control system;
The pulse laser system produces the infrared laser of pulsed, and the central aperture of microstrip antenna is vertical through in microwave system
It is radiated at the sample surface on sample stage;
The X-axis motion, Y-axis motion, Z axis motion respectively include a direct current brushless servo motor and one
Individual ball-screw guide rail, each direct current brushless servo motor is respectively connected with kinetic control system;
The sample stage is provided with below adsorption hole, the adsorption hole and is connected with vacuum and negative pressure pump;
Test control system exports measurement result in distribution map form;
The kinetic control system includes motion controller and 3 servo-drivers, and every servo-driver is straight with one respectively
Flow brushless servo motor to be connected, motion controller is connected with test control system, for the motion according to test control system refers to
Order exports umber of pulse, direction, velocity information to servo-driver, servo driver drives correspondence direct current brushless servo motor fortune
It is dynamic;
Pulse coder is designed with each direct current brushless servo motor, the pulse coder connects with motion controller
Connect.
2. scan-type microwave reflection carrier recombination lifetime test system according to claim 1, it is characterised in that institute
State microstrip antenna in microwave system and use polytetrafluoroethylene (PTFE) double face copper, including bottom copper foil plate, polyfluortetraethylene plate, on
Layer copper foil plate, bottom copper foil plate forms a transmission for being used for microwave signal and the circle ring area received through corrosion, in annular regions
The polyfluortetraethylene plate and upper copper plate of the inner circle loop section in domain open up loophole, and a long 3.8- is extended at the edge of annulus
6.5mm, wide 0.9-1.8mm copper strips are as the connecting line of coaxial feeder, and polytetrafluoroethylene (PTFE) double face copper is at connecting line end
End is provided with a through hole, and coaxial feeder is directly welded by this through hole with connecting line.
3. scan-type microwave reflection carrier recombination lifetime test system according to claim 2, it is characterised in that institute
The size for stating polytetrafluoroethylene (PTFE) double face copper is long 20-25mm, wide 15-20mm, high 2-6mm, and two-sided is that thickness is respectively
0.01~0.1mm's covers copper face.
4. scan-type microwave reflection carrier recombination lifetime test system according to claim 1, it is characterised in that institute
State scan-type microwave reflection carrier recombination lifetime test system to be integrally provided in a mainframe box, Y-axis motion is set
On mainframe box bottom plate, Z axis motion is located on mainframe box backboard.
5. a kind of scan-type microwave reflection carrier recombination lifetime test system based on described in claim any one of 1-4
Method of testing, it is characterised in that including step:
(1) probe is in initialized location;
(2) the point position coordinates tested the need for test control system is inputted according to user, transmits a signal to kinetic control system,
Kinetic control system sends umber of pulse, direction, velocity information to scanning motion system, and scanning motion system is according to above- mentioned information control
System probe carries out X, Y, Z axis three-dimensional motion, is positioned on the point position for needing to test;
(3) pulse laser system produces the infrared laser of pulsed, and the central aperture through the microstrip antenna of microwave system is vertical
It is radiated on sample, microwave signal is transmitted on sample by microwave system by microstrip antenna, while microstrip antenna
Microwave reflection signal is received, ring detector of the microwave reflection signal through microwave system detects and be input to data collecting system
Data signal is translated into after broad band amplifier input, amplification and is sent to test control system preservation;
(4) test control system judges whether also next point position for needing to test, if so, step (2) is then performed, it is no
Then test control system carries out statistical analysis, externally output carrier recombination lifetime result of calculation, and controlling to the signal of preservation
Probe playback.
6. method of testing according to claim 5, it is characterised in that watched in the scanning motion system using brush DC
Motor is taken, pulse coder is designed with each direct current brushless servo motor, when direct current brushless servo motor is moved, arteries and veins
Rush encoder and produce pulse, these pulse feedbacks to motion controller, motion controller is counted to these pulses, and in real time
Currently practical umber of pulse and the umber of pulse of setting are compared by ground, and motion compensation is carried out once there is gap.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410528794.9A CN104266960B (en) | 2014-10-09 | 2014-10-09 | Scan-type microwave reflection carrier recombination lifetime test system and method for testing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410528794.9A CN104266960B (en) | 2014-10-09 | 2014-10-09 | Scan-type microwave reflection carrier recombination lifetime test system and method for testing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104266960A CN104266960A (en) | 2015-01-07 |
CN104266960B true CN104266960B (en) | 2017-09-15 |
Family
ID=52158501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410528794.9A Active CN104266960B (en) | 2014-10-09 | 2014-10-09 | Scan-type microwave reflection carrier recombination lifetime test system and method for testing |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104266960B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105158568B (en) * | 2015-08-28 | 2018-03-02 | 广州市昆德科技有限公司 | Semiconductor resistor rate surveying instrument and mapping method based on capacitor charge and discharge principle |
CN106249122B (en) * | 2016-09-07 | 2019-03-05 | 广州市昆德科技有限公司 | The high frequency photoconduction life-span tester and its test method of controllable injection ratio |
CN106370994A (en) * | 2016-09-12 | 2017-02-01 | 工业和信息化部电子工业标准化研究院 | High-frequency photoconductivity decay method charge carrier life tester |
CN106980078B (en) * | 2017-05-22 | 2023-08-18 | 山东辰宇稀有材料科技有限公司 | Minority carrier lifetime tester probe and minority carrier lifetime tester |
CN107591340A (en) * | 2017-08-01 | 2018-01-16 | 惠科股份有限公司 | Semiconductor testing method and device |
CN109781165B (en) * | 2018-12-29 | 2021-02-09 | 南京协辰电子科技有限公司 | Probe positioning deviation detection and auxiliary method, device and system |
CN109884086B (en) * | 2019-03-26 | 2020-10-09 | 合肥鑫晟光电科技有限公司 | Method and device for detecting environment humidity |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE514095T1 (en) * | 2007-09-11 | 2011-07-15 | Soitec Silicon On Insulator | VOLUME LIFE MEASUREMENT |
CN201527394U (en) * | 2009-07-13 | 2010-07-14 | 华中农业大学 | Triaxial soil hyperspectral imaging experiment table |
CN202433489U (en) * | 2011-12-22 | 2012-09-12 | 广州市昆德科技有限公司 | Recombination lifetime tester for microwave reflection contactless silicon crystal carrier |
CN203414392U (en) * | 2013-07-26 | 2014-01-29 | 中国科学院光电研究院 | Extreme ultraviolet radiation damage testing equipment |
CN204154617U (en) * | 2014-10-09 | 2015-02-11 | 广州市昆德科技有限公司 | Scan-type microwave reflection carrier recombination lifetime test macro |
-
2014
- 2014-10-09 CN CN201410528794.9A patent/CN104266960B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN104266960A (en) | 2015-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104266960B (en) | Scan-type microwave reflection carrier recombination lifetime test system and method for testing | |
CN106546604B (en) | A kind of bronze surface and Sub-surface defect detection method and system | |
CN102288883B (en) | Oscillation wave partial discharge identifying and positioning method for asynchronous double-end power cable | |
CN105911499B (en) | Ultrasonic wave shelf depreciation metering system and method under site environment | |
CN108957379B (en) | On-site calibration method for GIS partial discharge ultrahigh frequency detection equipment | |
CN103674223B (en) | noise source testing device, system and method | |
CN110487909B (en) | Non-invasive soil moisture sound wave detection device and method | |
CN203643398U (en) | Pulsed eddy current array imaging detection system | |
CN109917258A (en) | High-power transformer shelf depreciation position finding and detection method | |
CN206832987U (en) | A kind of parameters,acoustic measurement apparatus of side scan sonar | |
CN109342446A (en) | A kind of steel structure girder cosmetic bug detection instrument and method | |
CN106680821A (en) | Ultrasonic damage-free method for detecting thickness of NiCoCrAlYTa hexabasic coating plasma spraying coating | |
CN113899818A (en) | Ultrasonic detection method for R-region defects of T-shaped component for fuselage structure | |
CN204154617U (en) | Scan-type microwave reflection carrier recombination lifetime test macro | |
CN105891685A (en) | All-weather ultrasonic state monitoring device for substation equipment | |
CN104458915B (en) | A kind of wind tower weld seam non-linear ultrasonic detection method | |
CN103491698A (en) | Micro-focus X-ray source dynamic focus control method | |
CN209117629U (en) | A kind of disc insulator defects detection positioning device based on supersonic guide-wave | |
CN103439641A (en) | Surface photovoltage method based semiconductor material parameter testing device and testing method | |
CN207007993U (en) | A kind of measuring device with electricity of partial discharge of transformer | |
CN103888075B (en) | Device for measuring power characteristic of PV assembly in full time | |
CN108896666A (en) | Bolt cylinder Guided waves system and its detection method | |
CN205178985U (en) | Photovoltaic module angle of incidence factor of influence testing arrangement | |
CN206020600U (en) | High frequency method of photoconductivity decay measurement carrier lifetime tester | |
CN201269745Y (en) | Intelligentized pipe laser length-measuring apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210210 Address after: Room 607, building 12, Zengcheng low carbon headquarters, No. 400, Xincheng Avenue, Zengcheng District, Guangzhou, Guangdong 511300 Patentee after: GUANGZHOU KUNDE SEMICONDUCTOR TESTING TECHNOLOGY Co.,Ltd. Address before: 510650 3rd floor, east gate, 123 baishashui Road, Tianhe District, Guangzhou City, Guangdong Province Patentee before: GUANGZHOU KUNDE TECHNOLOGY Co.,Ltd. |