CN104266767A - Substrate temperature compensation's infrared focal plane array detector read-out circuit - Google Patents
Substrate temperature compensation's infrared focal plane array detector read-out circuit Download PDFInfo
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- 238000001514 detection method Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 4
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- 238000003331 infrared imaging Methods 0.000 description 3
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Abstract
The embodiment of the invention discloses a substrate temperature compensation reading circuit of an infrared focal plane array detector, which comprises a pixel current bias integral signal generating circuit 10, a reference voltage generating circuit 20 and a production line analog-to-digital converter 30. The pixel current bias integral signal generating circuit 10 performs constant current bias on the first reference micro bolometer to obtain a first reference voltage and performs integration to obtain an integral output signal, and the reference voltage generating circuit 20 generates a second reference voltage based on the second reference micro bolometer. In the circuit in the embodiment of the invention, the relation trend of the integrated output signal and the second reference voltage with the substrate temperature is the same, so that the influence of the substrate temperature can be eliminated after the pipeline analog-to-digital converter calculates the proportion of the integrated output signal and the second reference voltage, and the substrate temperature compensation is realized while the analog-to-digital conversion is carried out.
Description
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Technical field
The present invention relates to non-refrigerate infrared focal plane array seeker technical field, especially relate to a kind of infrared focal plane array seeker sensing circuit with substrate temperature compensation.
Background technology
Micro-metering bolometer infrared imaging system is as a kind of thermosensitive type infrared eye, if do not adopt special compensation way, its result of detection and underlayer temperature are relevant.In actual use, the result of wishing infrared acquisition only with detection of a target temperature correlation, and to have nothing to do with other factors.
Use thermoelectric refrigerating unit (Thermo-Electric Cooler, TEC) to realize underlayer temperature in tradition uncooled microbolometer infrared imaging system to compensate.But TEC itself has certain volume and power consumption, thus make the application of non-refrigerate infrared focal plane array seeker by impact to a certain extent, so people attempt removing TEC.But remove the micro-metering bolometer infrared imaging system after TEC, the change along with underlayer temperature can cause the great heterogeneity of focal plane arrays (FPA) and the non-ideal effects such as non-linear, thus impact reads result.
Solve the gordian technique without the non-ideal effects of the non-refrigerate infrared focal plane array seeker of TEC, be technologic improvement on the one hand, be the design of the sensing circuit with Nonuniformity Correction function on the other hand, from circuit, heterogeneity is compensated, make non-refrigerate infrared focal plane array seeker when not having TEC as temperature stabilization device, also normally can work, export the image with good quality.Meanwhile, simulating signal being converted to digital signal output at chip internal is also a kind of effective means ensureing picture quality.
Existing have analog-digital conversion function without in TEC non-refrigerating infrared focal plane sensing circuit, adopt constant voltage to be biased detection micro-metering bolometer and obtain infrared radiation signal with reference to the mode of micro-metering bolometer, increase integrated reference the micro-metering bolometer of row levels in circuit to compensate to realize underlayer temperature, namely often use two reference micro-metering bolometers in row read-out channel.The infrared radiation signal obtained amplifies through integrator, then analog to digital converter is converted to digital signal output.
In the sensing circuit of prior art, it doesn't matter for analog to digital conversion and infrared acquisition itself.In addition, owing to using two in every row read-out channel with reference to micro-metering bolometers, add noise source in circuit, too increase larger chip area simultaneously.
Summary of the invention
An object of the present invention is to provide a kind of infrared focal plane array seeker sensing circuit with underlayer temperature compensate function.
Technical scheme disclosed by the invention comprises:
Provide the infrared focal plane array seeker sensing circuit that a kind of underlayer temperature compensates, it is characterized in that, comprise: pixel current offset integrated signal produces circuit 10, described pixel current offset integrated signal produces circuit 10 and comprises the first current biasing circuit 101, second current biasing circuit 102 and integrating circuit 103, described first current biasing circuit 101 carries out constant biasing to detection micro-metering bolometer and obtains detecting voltage Vsce, described second current biasing circuit 102 carries out constant biasing to first with reference to micro-metering bolometer and obtains the first reference voltage Vref, described integrating circuit 103 carries out integration according to described detecting voltage Vsce and described first reference voltage Vref and produces integral output signal Vint, generating circuit from reference voltage 20, described generating circuit from reference voltage 20 produces multiple second reference voltage, production line analog-digital converter 30, described production line analog-digital converter 30 converts described integral output signal Vint to digital signal according to described multiple second reference voltage.
In one embodiment of the present of invention, described first current biasing circuit 101 comprises the first constant current source 1010 and the first voltage follower 1011, wherein: described first constant current source 1010 is connected to one end of described detection micro-metering bolometer Rs; The input end of described first voltage follower 1011 is connected to described one end be connected with described first constant current source 1010 of described detection micro-metering bolometer Rs, and the output terminal of described first voltage follower 1011 is connected to described integrating circuit 103.
In one embodiment of the present of invention, described second current biasing circuit 10 comprises the second constant current source 1020 and the second voltage follower 1021, wherein: described second constant current source 1020 is connected to one end of described first reference micro-metering bolometer Rb; The input end of described second voltage follower 1021 is connected to described one end be connected with described second constant current source 1020 of described first reference micro-metering bolometer Rb, and the output terminal of described second voltage follower 1021 is connected to described integrating circuit 103.
In one embodiment of the present of invention, described generating circuit from reference voltage 20 comprises the 3rd constant current source 201, multiple second with reference to micro-metering bolometer 202 and multiple tertiary voltage follower 203, wherein: described multiple second connects mutually with reference to micro-metering bolometer 202; Described 3rd constant current source 201 is connected with reference to micro-metering bolometer 202 with described multiple second; The input end of each tertiary voltage follower in described multiple tertiary voltage follower 203 is connected to described multiple second and is connected to a reference voltage output terminal of described generating circuit from reference voltage 20 with reference to second in micro-metering bolometer 202 with reference to one end of micro-metering bolometer, output terminal and exports described second reference voltage.
In one embodiment of the present of invention, described first does not affect by incident infrared radiation with reference to micro-metering bolometer.
In one embodiment of the present of invention, described first comprises mask with reference to micro-metering bolometer, and described mask stops incident infrared radiation, makes the infrared radiation of described incidence can not incide described first with reference on micro-metering bolometer.
In one embodiment of the present of invention, described second does not affect by incident infrared radiation with reference to micro-metering bolometer.
In one embodiment of the present of invention, described second comprises mask with reference to micro-metering bolometer, and described mask stops incident infrared radiation, makes the infrared radiation of described incidence can not incide described second with reference on micro-metering bolometer.
In circuit in embodiments of the invention, integral output signal is identical with underlayer temperature relation trend with the second reference voltage, therefore can eliminate the impact of underlayer temperature after the two is asked ratio by production line analog-digital converter, thus compensate at the analog-to-digital underlayer temperature that achieves simultaneously.
Accompanying drawing explanation
Fig. 1 is the structured flowchart schematic diagram of the infrared focal plane array seeker sensing circuit that the underlayer temperature of one embodiment of the invention compensates.
Fig. 2 is the structural representation of the pixel current offset integrated signal generation circuit of one embodiment of the invention.
Fig. 3 is the structural representation of the generating circuit from reference voltage of one embodiment of the invention.
Fig. 4 is the schematic diagram of the input and output transition curve of the production line analog-digital converter of one embodiment of the invention.
Embodiment
The concrete structure of the infrared focal plane array seeker sensing circuit that the underlayer temperature describing embodiments of the invention in detail below in conjunction with accompanying drawing compensates.
As shown in Figure 1, in one embodiment of the present of invention, the infrared focal plane array seeker sensing circuit that a kind of underlayer temperature compensates comprises pixel current offset integrated signal and produces circuit 10, generating circuit from reference voltage 20 and production line analog-digital converter 30.
As shown in Figure 2, in one embodiment of the present of invention, pixel current offset integrated signal produces circuit 10 and comprises the first current biasing circuit 101, second current biasing circuit 102 and integrating circuit 103.
In embodiments of the invention, the first current biasing circuit 101 carries out constant biasing to detection micro-metering bolometer (its equivalent resistance is expressed as Rs, also represents this detection micro-metering bolometer with Rs herein) and obtains detecting voltage Vsce.
As shown in Figure 2, in one embodiment of the present of invention, the first current biasing circuit 101 comprises the first constant current source 1010 and the first voltage follower 1011.First constant current source 1010 is connected to one end of detection micro-metering bolometer Rs.The input end of the first voltage follower 1011 is connected to one end be connected with the first constant current source 1010 of this detection micro-metering bolometer Rs, and the output terminal of the first voltage follower 1011 is connected to integrating circuit 103.The output terminal of this first voltage follower 1011 exports aforesaid detecting voltage Vsce.
Second current biasing circuit 102 carries out constant biasing to first with reference to micro-metering bolometer (its equivalent resistance is expressed as Rb, also represents this first reference micro-metering bolometer with Rb herein) and obtains the first reference voltage Vref.
As shown in Figure 2, the second current biasing circuit 10 comprises the second constant current source 1020 and the second voltage follower 1021.Second constant current source 1020 is connected to one end of the first reference micro-metering bolometer Rb.The input end of the second voltage follower 1021 is connected to one end be connected with the second constant current source 1020 of this first reference micro-metering bolometer Rb, and the output terminal of the second voltage follower 1021 is connected to integrating circuit 103.The output terminal of this second voltage follower 1021 exports aforesaid first reference voltage Vref.
Integrating circuit 103 carries out integration according to detecting voltage Vsce and the first reference voltage Vref and produces integral output signal Vint.
In embodiments of the invention, the bias current Iref that first constant current source provides is to detection micro-metering bolometer unit constant biasing, during work, infrared radiation is detected micro-metering bolometer unit and obtains, the temperature of detection micro-metering bolometer unit is changed, cause the equivalent resistance Rs of detection micro-metering bolometer unit to change, due to voltage Vs=Iref × Rs, therefore change voltage Vsce.In addition, when the underlayer temperature of infrared focal plane array changes, the equivalent resistance Rs of detection micro-metering bolometer unit also can change, thus causes Vsce to change.
Meanwhile, the first reference micro-metering bolometer unit is also that the bias current Iref provided by constant current source is biased, but this first reference micro-metering bolometer unit does not affect by incident infrared radiation.Such as, in an embodiment, first can comprise mask with reference to micro-metering bolometer unit, and during work, this mask blocks incident infrared radiation and incident infrared radiation can not be incided on this first reference micro-metering bolometer unit.
In one embodiment of the invention, except this mask, other structure with reference to micro-metering bolometer unit can be identical with aforesaid detection micro-metering bolometer unit.
During work, first does not produce response to the infrared radiation of incidence with reference to micro-metering bolometer, but its equivalent resistance Rb can be subject to the impact of the underlayer temperature of infrared focal plane array, due to voltage Vref=Iref × Rb, therefore can change voltage Vref.
Integrating circuit 103 for initial value, carries out integration according to the difference of the first reference voltage Vref and detecting voltage Vsce with the first reference voltage Vref, produces integral output signal Vint.
In embodiments of the invention, generating circuit from reference voltage 20 produces multiple second reference voltage.
As shown in Figure 3, in one embodiment of the present of invention, generating circuit from reference voltage 20 can comprise the 3rd constant current source 201, multiple second with reference to micro-metering bolometer 202 and multiple tertiary voltage follower 203.The plurality of second connects mutually with reference to micro-metering bolometer 202, and the 3rd constant current source 201 is connected with reference to micro-metering bolometer 202 with the plurality of second.
The input end of each tertiary voltage follower in the plurality of tertiary voltage follower 203 is connected to multiple second to be connected to generating circuit from reference voltage 20 with reference to one end of micro-metering bolometer, an output terminal reference voltage output terminal with reference to second in micro-metering bolometer 202, thus exports second reference voltage.
Such as, in the embodiment of Fig. 3, be described for the sub-level structure of 1.5 bit, the bias current 0.2Iref that the 3rd constant current source 201 provides to second of 10 series connection with reference to micro-metering bolometer Rb1, Rb2 ..., Rb10 is biased.These 10 second equivalent resistances with reference to micro-metering bolometer are relevant with underlayer temperature.In addition, under they can be in same substrate, therefore now, these 10 second equivalent resistances with reference to micro-metering bolometer can be equal, and be equal to the equivalent resistance Rb of the first reference micro-metering bolometer, i.e. Rb1=Rb2=...=Rb10=Rb.
Due to Vref=Iref × Rb, so A point voltage is 0.2 Vref, B point voltage be 0.8Vref, C point voltage be 1.2Vref, D point voltage is 1.8Vref.These four voltages are exported by operational amplifier.The integrated signal that four reference voltages exported and the integrated signal of pixel current offset produce circuit output is consistent with the trend that underlayer temperature changes.
In embodiments of the invention, aforesaid second does not also affect by incident infrared radiation with reference to micro-metering bolometer unit.Such as, in an embodiment, second can comprise mask with reference to micro-metering bolometer unit, and during work, this mask blocks incident infrared radiation and incident infrared radiation can not be incided on this second reference micro-metering bolometer unit.
In embodiments of the invention, aforesaid first constant current source, the second constant current source and/or the 3rd constant current source can be constant current source that is independent, that be separated respectively, also can be at least partly directly or secondary source in identical constant current source.
In embodiments of the invention, production line analog-digital converter 30 can convert integral output signal Vint to digital signal according to aforesaid multiple second reference voltage and export.
Such as, in an embodiment, four second reference voltages 0.2Vref, 0.8Vref, 1.2Vref, 1.8Vref that the integrated signal Vint produced by pixel current offset integrated signal generation circuit 10 and generating circuit from reference voltage 20 produce are input in pipeline ADC 30 and process.In embodiments of the invention, utilize integrated signal Vint and the second reference voltage 0.2 Vref, 0.8 Vref, 1.2 Vref, feature that 1.8 Vref are identical with the relation trend of underlayer temperature, in analog-to-digital process, namely complete underlayer temperature compensate.Because the essence of the pipeline ADC in the embodiment of the present invention asks the ratio of Vint and the second reference voltage, after the two asks ratio, the item relevant to underlayer temperature can be eliminated, therefore its ratio and underlayer temperature have nothing to do.
Fig. 4 is the input and output transition curve of the production line analog-digital converter of one embodiment of the invention.Four reference voltages that the generating circuit from reference voltage of input signal and embodiment produces are carried out the relation processed by the sub-level unit this graph illustrating pipeline ADC.
In circuit in embodiments of the invention, integral output signal is identical with underlayer temperature relation trend with the second reference voltage, therefore can eliminate the impact of underlayer temperature after the two is asked ratio by production line analog-digital converter, thus compensate at the analog-to-digital underlayer temperature that achieves simultaneously.
Described the present invention by specific embodiment above, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various amendment, equivalent replacement, change etc. to the present invention, as long as these conversion do not deviate from spirit of the present invention, all should within protection scope of the present invention.In addition, " embodiment " described in above many places represents different embodiments, can certainly by its all or part of combination in one embodiment.
Claims (8)
1. an infrared focal plane array seeker sensing circuit for underlayer temperature compensation, is characterized in that, comprising:
Pixel current offset integrated signal produces circuit (10), described pixel current offset integrated signal produces circuit (10) and comprises the first current biasing circuit (101), second current biasing circuit (102) and integrating circuit (103), described first current biasing circuit (101) is carried out constant biasing to detection micro-metering bolometer and is obtained detecting voltage (Vsce), described second current biasing circuit (102) is carried out constant biasing to first with reference to micro-metering bolometer and is obtained the first reference voltage (Vref), described integrating circuit (103) carries out integration according to described detecting voltage (Vsce) and described first reference voltage (Vref) and produces integral output signal (Vint),
Generating circuit from reference voltage (20), described generating circuit from reference voltage (20) produces multiple second reference voltage;
Production line analog-digital converter (30), described production line analog-digital converter (30) converts described integral output signal (Vint) to digital signal according to described multiple second reference voltage.
2. circuit as claimed in claim 1, is characterized in that: described first current biasing circuit (101) comprises the first constant current source (1010) and the first voltage follower (1011), wherein:
Described first constant current source (1010) is connected to one end of described detection micro-metering bolometer (Rs);
The input end of described first voltage follower (1011) is connected to described one end be connected with described first constant current source (1010) of described detection micro-metering bolometer (Rs), and the output terminal of described first voltage follower (1011) is connected to described integrating circuit (103).
3. circuit as described in claim 1 or 2, is characterized in that: described second current biasing circuit (10) comprises the second constant current source (1020) and the second voltage follower (1021), wherein:
Described second constant current source (1020) is connected to one end of described first reference micro-metering bolometer (Rb);
The input end of described second voltage follower (1021) is connected to described one end be connected with described second constant current source (1020) of described first reference micro-metering bolometer (Rb), and the output terminal of described second voltage follower (1021) is connected to described integrating circuit (103).
4. as the circuit in claims 1 to 3 as described in any one, it is characterized in that: described generating circuit from reference voltage (20) comprises the 3rd constant current source (201), multiple second with reference to micro-metering bolometer (202) and multiple tertiary voltage follower (203), wherein:
Described multiple second connects mutually with reference to micro-metering bolometer (202);
Described 3rd constant current source (201) is connected with reference to micro-metering bolometer (202) with described multiple second;
The input end of each tertiary voltage follower in described multiple tertiary voltage follower (203) is connected to described multiple second and is connected to a reference voltage output terminal of described generating circuit from reference voltage (20) with reference to second in micro-metering bolometer (202) with reference to one end of micro-metering bolometer, output terminal and exports described second reference voltage.
5. as the circuit in Claims 1-4 as described in any one, it is characterized in that: described first does not affect by incident infrared radiation with reference to micro-metering bolometer.
6. circuit as claimed in claim 5, is characterized in that: described first comprises mask with reference to micro-metering bolometer, and described mask stops incident infrared radiation, makes the infrared radiation of described incidence can not incide described first with reference on micro-metering bolometer.
7. circuit as described in claim 4, is characterized in that: described second does not affect by incident infrared radiation with reference to micro-metering bolometer.
8. circuit as claimed in claim 7, is characterized in that: described second comprises mask with reference to micro-metering bolometer, and described mask stops incident infrared radiation, makes the infrared radiation of described incidence can not incide described second with reference on micro-metering bolometer.
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| CN201410485201.5A CN104266767A (en) | 2014-09-22 | 2014-09-22 | Substrate temperature compensation's infrared focal plane array detector read-out circuit |
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Cited By (6)
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| CN104796634A (en) * | 2015-04-20 | 2015-07-22 | 中国航天科技集团公司第九研究院第七七一研究所 | Pixel bias circuit and control method for oversized-area-array CMOS (complementary metal-oxide-semiconductor transistor) image sensor |
| CN107727243A (en) * | 2017-11-22 | 2018-02-23 | 北方广微科技有限公司 | Un-cooled infrared focal plane array reading circuit |
| CN110987198A (en) * | 2019-10-31 | 2020-04-10 | 北京空间机电研究所 | Space remote sensing infrared detector focal plane temperature precision measurement system |
| CN111141397A (en) * | 2019-11-15 | 2020-05-12 | 西安电子科技大学 | Nonuniformity correction circuit for APD detector array |
| CN112003617A (en) * | 2020-08-28 | 2020-11-27 | 电子科技大学 | Analog-digital conversion device and method with substrate temperature compensation for infrared focal plane |
| WO2023185990A1 (en) * | 2022-04-02 | 2023-10-05 | 杭州海康微影传感科技有限公司 | Infrared readout circuit and control method therefor |
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Application publication date: 20150107 |
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| RJ01 | Rejection of invention patent application after publication |