CN104253608B - Level shifting circuit and its voltage level conversion method - Google Patents
Level shifting circuit and its voltage level conversion method Download PDFInfo
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- CN104253608B CN104253608B CN201310263267.5A CN201310263267A CN104253608B CN 104253608 B CN104253608 B CN 104253608B CN 201310263267 A CN201310263267 A CN 201310263267A CN 104253608 B CN104253608 B CN 104253608B
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Abstract
A kind of level shifting circuit, including one first level shifter and a second electrical level shift unit.First control voltage is converted to the second control voltage by the first level shifter during voltage conversion.Second electrical level shift unit is coupled to the first level shifter.Second control voltage is converted to the 3rd control voltage by second electrical level shift unit during voltage conversion, to control a next stage circuit.First level shifter be used to detect the operation of the 3rd control voltage where power domain a voltage level, and multiple medium voltages are produced according to testing result.Second electrical level shift unit produces the 3rd control voltage according to medium voltage.In addition, a kind of voltage level conversion method is also suggested.
Description
Technical field
The invention relates to a kind of level shifting circuit and its voltage level conversion method, and in particular to one kind
Level shifting circuit and its voltage level conversion method with self bias voltage control.
Background technology
Known level shifting circuit utilizes multistage level translator, by input signal by positive domain (power
Domain negative power domain) is converted to, then, then the circuit that output signal is exported to needed for next stage control.Positive herein
Domain is, for example, power interval of the positive operating voltage to ground voltage, and negative power domain is, for example, work(of the ground voltage to negative operating voltage
Rate is interval.However, when the operation of known level shifting circuit turns the application in negative power domain in positive domain, because level conversion
Electronic component in circuit has the pressure-resistant limitation of operation, that is, electronic component voltage bound of its power domain in operation
Difference cannot be greater than specified magnitude of voltage, therefore outside is must take into consideration during operation be supplied in operating voltage needed for level translator
Quantity.Also, operating voltage is in switching on and shutting down program, it is necessary to can correctly output control signal, and ensure no mistake
Level exports and causes to be controlled circuit abnormal by mistake.In this instance, if in electronic component in level shifting circuit
Pressure element, about 6 volts of limitation that its is pressure-resistant, if high voltage device, about 12 volts of limitation that its is pressure-resistant.
According to above-mentioned concept, it is known that level shifting circuit can typically be realized by beneath two ways in design.Its
A kind of middle practice is that medium pressure element is used inside level shifting circuit, and plus multiple external electricals that external circuit is provided
Pressure.Wherein the grade external voltage includes a negative voltage higher and a relatively low negative voltage.In switching on and shutting down program, this two
The design of negative voltage need to have certain sequencing, be produced to its next stage circuit with the level for avoiding level translator output error
Raw abnormal current.Another practice is that level shifting circuit is additionally designed using high voltage device, but this kind of design is needed to use
Two kinds of elements, in addition to increasing cost, the time needed for also increasing processing procedure.
The content of the invention
The present invention provides a kind of level shifting circuit, and the work(of its operating voltage and output voltage is dynamically adjusted with self
Energy.
The present invention provides a kind of voltage level conversion method, and the operating voltage of level shifting circuit is dynamically adjusted with self
And the function of output voltage.
The present invention provides a kind of level shifting circuit, including one first level shifter and a second electrical level shift unit.
First level shifter is used to one first control voltage is converted into one second control voltage during a voltage conversion.First control
Voltage processed is between a first voltage and a second voltage.Second control voltage is in one first medium voltage and one second
Between between voltage.Second electrical level shift unit is coupled to the first level shifter, to during voltage conversion that the second control is electric
Pressure is converted to one the 3rd control voltage, to control a next stage circuit.3rd control voltage is between the first medium voltage and one
Between three voltages.First level shifter detects tertiary voltage, and produces multiple medium voltages according to a testing result.In
Between voltage include the first medium voltage, the second medium voltage and one the 3rd medium voltage.Second electrical level shift unit is according to middle electricity
Press to produce the 3rd control voltage.
The present invention provides a kind of voltage level conversion method, is suitable to a level shifting circuit.Voltage level conversion method bag
Include following steps.One first control voltage is converted into one second control voltage during a voltage conversion.First control voltage
Between a first voltage and a second voltage.Second control voltage is between one first medium voltage and one second medium voltage
Between.The second control voltage is converted into one the 3rd control voltage during voltage conversion, to control the one of level shifting circuit
Next stage circuit.3rd control voltage is between the first medium voltage and a tertiary voltage.Second control voltage is converted to
Before the step of three control voltages, voltage level conversion method also comprises the following steps.Detection tertiary voltage, and according to one
Testing result produces multiple medium voltages.Medium voltage is included in the middle of the first medium voltage, the second medium voltage and the 3rd
Voltage.The step of second control voltage is converted into three control voltages is to produce the 3rd control voltage according to medium voltage.
In an embodiment of the present invention, included for one first transition period during above-mentioned voltage conversion.In the first transition period
Between, tertiary voltage is more than or equal to a critical level.
In an embodiment of the present invention, in the first transition period, the 3rd above-mentioned medium voltage substantially remains unchanged, and
First medium voltage substantially remains unchanged or is gradually increasing or is gradually reduced in response to tertiary voltage.Second medium voltage is responded
It is gradually increasing or is gradually reduced in tertiary voltage.
In an embodiment of the present invention, in the first transition period, the first above-mentioned medium voltage is more than the second medium voltage.
Second medium voltage is more than tertiary voltage.
In an embodiment of the present invention, included for one second transition period during above-mentioned voltage conversion.In the second transition period
Between, tertiary voltage is less than critical level and more than a rated voltage level.
In an embodiment of the present invention, in the second transition period, the 3rd above-mentioned medium voltage substantially remains unchanged.The
One medium voltage and the second medium voltage are gradually increasing or are gradually reduced in response to tertiary voltage.
In an embodiment of the present invention, in the second transition period, the 3rd above-mentioned medium voltage is more than the first medium voltage.
First medium voltage is more than the second medium voltage.Second medium voltage is more than tertiary voltage.
In an embodiment of the present invention, included for one the 3rd transition period during above-mentioned voltage conversion.In the 3rd transition period
Between, tertiary voltage is converted to a rated voltage level.
In an embodiment of the present invention, in the 3rd transition period, above-mentioned the first medium voltage, the second medium voltage and
Three medium voltages substantially remain unchanged.
In an embodiment of the present invention, in the 3rd transition period, the 3rd above-mentioned medium voltage is more than the first medium voltage.
First medium voltage is more than the second medium voltage.Second medium voltage is more than tertiary voltage.
In an embodiment of the present invention, a difference of the 3rd above-mentioned medium voltage and the second medium voltage turns less than level
Change the pressure voltage that circuit can bear.First medium voltage to be held with a difference of tertiary voltage less than level shifting circuit
The pressure voltage received.
In an embodiment of the present invention, the first above-mentioned level shifter includes that a first voltage produces circuit, a voltage
Detection circuit and a second voltage produce circuit.First voltage produces circuit to be used to be produced according to first voltage and second voltage
Raw 3rd medium voltage.Voltage detecting circuit is coupled to first voltage and produces circuit, is used to detect tertiary voltage produce detection
As a result.Voltage detecting circuit collaboration first voltage produces circuit, is produced in first according to the 3rd medium voltage and testing result
Between voltage.Second voltage produces circuit to be coupled to first voltage and produces circuit, to according to the first medium voltage and tertiary voltage
To produce the second medium voltage.
In an embodiment of the present invention, above-mentioned first voltage is more than second voltage, and second voltage is more than tertiary voltage.
Based on above-mentioned, in exemplary embodiment of the invention, the first level shifter may be used to detect tertiary voltage, and
Produce multiple medium voltages according to testing result, thus its level shifting circuit have self dynamically adjust its operating voltage and
The function of output voltage.
It is that features described above of the invention and advantage can be become apparent, special embodiment below, and coordinate institute's accompanying drawings
It is described in detail below.
Brief description of the drawings
Fig. 1 illustrates the schematic block diagram of the level shifting circuit of a correlation technique of the invention.
Fig. 2 illustrates the summary oscillogram of each voltage signal in the level shifting circuit of Fig. 1.
Fig. 3 illustrates the schematic block diagram of the level shifting circuit of one embodiment of the invention.
Fig. 4 illustrates the summary oscillogram of each voltage signal in the level shifting circuit of Fig. 3.
Fig. 5 illustrates the partial circuit diagram of the first level shifter of the embodiment of Fig. 3.
The step of Fig. 6 illustrates the voltage level conversion method of one embodiment of the invention flow chart.
[label declaration]
100、300：Level shifting circuit 110,310：First level shifter
120、320：Second electrical level shift unit 200,400：Digital Logical Circuits
312：First voltage produces circuit 312a：First buffer
312b：Second buffer 314：Voltage detecting circuit
314a、314b、314c、314d：Current mirror 316：Second voltage produces circuit
316a：3rd buffer Vctrl：First control signal
Vctrl1：Second control signal Vctrl2：3rd control signal
VSP：First voltage GND：Second voltage
VSN：Tertiary voltage VSP2：First medium voltage
VSN1：Second medium voltage VSP1：3rd medium voltage
V_max：Pressure-resistant upper limit V1, V2 of medium pressure element：Target voltage
VTH：Critical level VRA：Rated voltage level
VREF_VSP1：First reference voltage VREF_VSP2：Second reference voltage
Istart：Electric current R1, R2, R3, R4：Resistance
M1A、M1B、M2A、M2B、M3A、M3B、M4A、M4B、M5、M6：Transistor
P1：Boot program P2：Normal operating procedure
P3：Shutdown programm T1, T5：First transition period
T2、T4：Second transition period T3：3rd transition period
S600、S610、S620：The step of voltage level conversion method
Specific embodiment
In exemplary embodiment of the invention, level shifting circuit includes voltage detecting circuit, is used to detect its output letter
Number operation where power domain a voltage level.Level shifting circuit utilizes voltage detecting circuit, and dynamically foundation is detected
Voltage level, the voltage level of operating voltage and its output signal needed for adjust automatically its level translator at different levels so that
Reach using relatively low pressure-resistant element to realize the function of voltage level conversion.In the present invention, voltage detecting circuit is detected
Pair as if the minimum negative voltage level in negative power domain where being operated with output signal illustratively illustrates that but the present invention is not
It is limited to this.To more clearly understand the present invention, below in conjunction with schema, described in detail with an at least exemplary embodiment.
Fig. 1 illustrates the schematic block diagram of the level shifting circuit of a correlation technique of the invention.The level that Fig. 2 illustrates Fig. 1 turns
Change the summary oscillogram of each voltage signal in circuit.Fig. 1 and Fig. 2 is refer to, this level shifting circuit 100 includes two electricity
Flat switching stage, respectively the first level shifter 110 and second electrical level shift unit 120.First level shifter 110 receives the
One control signal Vctrl, and enter line level adjustment to the first control signal Vctrl, to export the second control signal accordingly
Vctrl1.Then, second electrical level shift unit 120 receives the second control signal Vctrl1, and to the second control signal Vctrl1
Level be adjusted, to export the 3rd control signal Vctrl2 to its next stage circuit 200 accordingly.Next stage circuit 200
Include the Digital Logical Circuits of medium pressure element in this way.In this instance, it is operation as the first control signal Vctrl of input signal
In the positive domain being situated between first voltage VSP and second voltage GND, as the 3rd control signal Vctrl2 of output signal
It is operate within the negative power domain being situated between second voltage GND and tertiary voltage VSN.
Compared to the embodiment of the present invention, in this correlation technique, the 3rd medium voltage VSP1 is level between first voltage
Positive voltage between VSP and second voltage GND, it can be produced by first voltage VSP.Second medium voltage VSN1 is less than
The negative voltage of two voltage GND.In boot program P1, normal operating procedure P2 and shutdown programm P3, level shifting circuit 100 is necessary
Ensure that the operating voltage inside the first level shifter 110 and second electrical level shift unit 120 is resistance to not over medium pressure element
Pressure upper limit V_max.Operating voltage herein includes the difference VSP1- of the 3rd medium voltage VSP1 and the second medium voltage VSN1
The difference GND-VSN1 of VSN1, second voltage GND and the second medium voltage VSN1, and second voltage GND and tertiary voltage VSN
Difference GND-VSN.Therefore, in boot program P1, the second medium voltage VSN1 must reach its target electricity in tertiary voltage VSN
Target voltage V1 is first reached before pressure V2.Also, in shutdown programm P3, the second medium voltage VSN1 must be in tertiary voltage VSN
Reach and reach target voltage again after its target voltage, to ensure that the second control signal Vctrl1 can normally control second electrical level to move
Position device 120, has different so as to the signal input for preventing mistake causes second electrical level shift unit 120 to second electrical level shift unit 120
Normal electric current is produced.In shutdown programm P3, the target voltage of the second medium voltage VSN1 and tertiary voltage VSN is all 0 volt.
In this instance, during the external circuit (not illustrating) of level shifting circuit 100 must provide for first voltage VSP, the 3rd
Between voltage VSP1 and tertiary voltage VSN.Also, the second medium voltage VSN1 is the negative voltage high compared with tertiary voltage VSN.Such as preceding institute
State, in switching on and shutting down program P1, P3, the second medium voltage VSN1 and tertiary voltage VSN has needed certain sequencing in sequential, with
The level of level translator output error is avoided to produce abnormal current to its next stage circuit.
Fig. 3 illustrates the schematic block diagram of the level shifting circuit of one embodiment of the invention.Fig. 4 illustrates the level conversion of Fig. 3
The summary oscillogram of each voltage signal in circuit.Refer to Fig. 3 and Fig. 4, the level shifting circuit 300 of the present embodiment includes one the
One level shifter 310 and a second electrical level shift unit 320.First level shifter 310 is used to during a voltage conversion
One first control voltage Vctrl is converted into one second control voltage Vctrl1.Here, first voltage VSP and second voltage GND
Be to biasing first level shift unit 310, make its operation positive domain, i.e. first voltage VSP and second voltage GND it
Between, therefore the input signal Vctrl that the first level shifter 310 is received operates in first voltage VSP and second voltage GND
Between.Meanwhile, during voltage conversion, the first level shifter 310 can detect the level change of tertiary voltage VSN, and root
Multiple medium voltages are produced according to testing result.Medium voltage herein includes the first medium voltage VSP2, the second medium voltage
VSN1 and the 3rd medium voltage VSP1, as shown in Figure 4.
In the present embodiment, according to the testing result of the first level shifter 310, in the first medium voltage VSP2 and second
Between voltage VSN1 can be adjusted in response to the change of tertiary voltage VSN, to realize self dynamically adjustment operating voltage and defeated
Go out the function of voltage.In addition, in the present embodiment, by the shadow that the first medium voltage VSP2 and the second medium voltage VSN1 is biased
Ring, the second control voltage Vctrl1 that the first level shifter 310 is exported operates in the first medium voltage VSP2 and second
Between medium voltage VSN1.
In addition, during the voltage conversion of the present embodiment include the first transition period T1, T5, second transition period T2, T4 with
And the 3rd transition period T3, as shown in Figure 4.Compared to the related example disclosed by Fig. 1, the boot program P1 of the present embodiment includes the
One transition period T1 and the second transition period T2, normal operating procedure P2 include that the 3rd transition period T3, shutdown programm P3 include
Second transition period T4 and the first transition period T5.During voltage conversion, the first medium voltage VSP2, the second medium voltage
Level relationship between VSN1 and the 3rd medium voltage VSP1 three is essentially that the 3rd medium voltage VSP1 is more than in the middle of first
Voltage VSP2, the first medium voltage VSP2 are more than the second medium voltage VSN1, to ensure the first level shifter 310 and the second electricity
Operating voltage inside translational shifting device 320 is not over the pressure-resistant upper limit V_max of medium pressure element.Only in the first transition period
T1, T5, the 3rd medium voltage VSP1 may be substantially equal to the first medium voltage VSP2.
Then, second electrical level shift unit 320 is coupled to the first level shifter 310, to during voltage conversion by
Two control voltage Vctrl1 are converted to one the 3rd control voltage Vctrl2, to control next stage circuit 400.Meanwhile, second electrical level
Shift unit 320 also can produce the 3rd control voltage Vctrl2 according to the medium voltage produced by the first level shifter 310.
In this example, the first medium voltage VSP2 and tertiary voltage VSN is, to biasing second level shift unit 320, to make it at the 3rd turn
Period T3 operations are changed in negative power domain, thus the 3rd control voltage Vctrl2 that is exported of second electrical level shift unit 320 be between
Between first medium voltage VSP2 and tertiary voltage VSN.
Furthermore, Fig. 5 illustrates the partial circuit diagram of the first level shifter of the embodiment of Fig. 3.Refer to Fig. 3 extremely
Fig. 5, first level shifter 310 of the present embodiment include a first voltage produce circuit 312, a voltage detecting circuit 314 with
And one second voltage produce circuit 316.First voltage produce circuit 312 be used to according to first voltage VSP and second voltage GND come
Produce the 3rd medium voltage VSP1.Voltage detecting circuit 314 is coupled to first voltage and produces circuit 312, is used to detect the 3rd electricity
VSN is pressed to produce testing result.In this instance, the collaboration of voltage detecting circuit 314 first voltage produces circuit 312 to work, both
The first medium voltage VSP2 is produced according to the 3rd medium voltage VSP1 and testing result.Second voltage produces circuit 316 to couple
Circuit 312 is produced to first voltage, to produce electricity in the middle of second according to the first medium voltage VSP2 and tertiary voltage VSP1
Pressure VSN1.
Specifically, the first voltage generation circuit 312 of the present embodiment includes the first buffer 312a and the second buffer
312b.First buffer 312a is implemented with the configuration of voltage follower device (voltage follower), and it is biased in first
Between voltage VSP and second voltage GND.The input of the first buffer 312a receives the first reference voltage VREF_VSP1, output
End exports the 3rd medium voltage VSP1 to one end of resistance R1.Additionally, the second buffer 312b of the present embodiment is also with voltage
The configuration of following device is implemented, and is biased between first voltage VSP and second voltage GND.Second buffer 312b's is defeated
Enter the other end that end is coupled to resistance R1, to receive the second reference voltage VREF_VSP2, and the second buffer 312b exists accordingly
Its output end exports the first medium voltage VSP2 to second voltage generation circuit 316.
In the present embodiment, voltage detecting circuit 314 include multiple current mirror 314a to 314d for repeatedly meeting (cascode) with
And resistance R2, R3.Current mirror 314a to 314d is used to detect the level change of tertiary voltage VSN, and by testing result with electricity
The change of Istart is flowed to show.Accordingly, in response to the level change of tertiary voltage VSN, voltage detecting circuit 314 can be from first
Buffer 312a draws electric current Istart, so as to cooperate with the first buffer 312a and resistance R1 in the input of the second buffer 312b
End produces the second reference voltage VREF_VSP2.
It is noted that it is to be illustrated including two buffers that the first voltage of the present embodiment produces circuit 312
It is bright, but the present invention is not limited thereto.In other embodiments, first voltage generation circuit 312 can not also configure the second buffer
312b, and cooperate with the first buffer 312a and resistance R1 to produce the first medium voltage VSP2 by voltage detecting circuit 314, and
Directly export the first medium voltage VSP2 to second voltage generation circuit 316, it is not necessary to transmit again via the second buffer 312b
Circuit 316 is produced to second voltage
In addition, in the present embodiment, second voltage generation circuit 316 includes the 3rd buffer 316a, the transistor for repeatedly connecing
M5, M6 and resistance R4.3rd buffer 316a is implemented with the configuration of voltage follower device, and it is biased in the first medium voltage
Between VSP2 and tertiary voltage VSN.The input of the 3rd buffer 316a receives the 3rd reference voltage VREF_VSN1, output end
Export the second medium voltage VSN1 to next stage circuit.One end of transistor M5, M6 for repeatedly connecing are coupled to the 3rd buffer 316a
Bias path, the other end is coupled to the input of the 3rd buffer 316a.One end of resistance R4 is coupled to the 3rd buffer
The input of 316a, the other end is coupled to tertiary voltage VSN.
Then, first level shifter 310 of beneath explanation the present embodiment is in boot program, normal operating procedure and pass
The mode of operation of machine program, and each voltage signal is in the change situation of distinct program, please continue to refer to Fig. 3 to Fig. 5.
Before level shifting circuit 300 enters boot program, tertiary voltage VSN is 0 volt, now the first medium voltage
VSP2 is equal to the second reference voltage VREF_VSP2, the second reference voltage VREF_VSP2 and is equal to the 3rd medium voltage VSP1, i.e.,
VSP2=VREF_VSP2=VSP1.Also, the second medium voltage VSN1 is equal to the 3rd reference voltage VREF_VSN1, the 3rd with reference to electricity
Pressure VREF_VSN1 subtracts N1 cut-in voltage Vov (turn on voltage), i.e. VSN1=equal to the first medium voltage VSP2
VREF_VSN1=VSP2-N1×Vov.In the implementation aspect of Fig. 5, Vov for example refers to the cut-in voltage of transistor M5, M6, and
And N1=2.
Then, when sequential enters the first transition period T1 of boot program, tertiary voltage VSN begins to decline, only herein
Period, tertiary voltage VSN is still greater than or equal to critical level VTH.Now, the second medium voltage VSN1 is in response to tertiary voltage
VSN and be gradually reduced, and the 3rd medium voltage VSP1 substantially remains unchanged during this period.Additionally, the first medium voltage
VSP2 substantially remains unchanged or is gradually reduced in response to tertiary voltage VSN.In the present embodiment, the first medium voltage VSP2
Remain unchanged and equal to the 3rd medium voltage VSP1, but in other embodiments, the first medium voltage VSP2 can be designed as not
It is equal to the 3rd medium voltage VSP1.Least for the operating voltage ensured inside level shifting circuit 300 not over middle pressure
The pressure-resistant upper limit V_max of element, in the first transition period T1, the first medium voltage VSP2 is more than the second medium voltage VSN1, the
Two medium voltage VSN1 are more than tertiary voltage VSN.
Afterwards, when sequential enters the second transition period T2 of boot program, tertiary voltage VSN is less than critical level VTH
And more than rated voltage level VRA.Critical level VTH herein, for the implementation aspect of Fig. 5, its value is-N2 × Vov,
Wherein Vov for example refers to the cut-in voltage of the transistor of each current mirror, and this N2=4.In the second transition period T2, when
When tertiary voltage VSN is less than critical level VTH, voltage detecting circuit 314 can start to draw electric current from the first buffer 312a
Istart, as tertiary voltage VSN continues to decline toward rated voltage level VRA, electricity in the middle of the first medium voltage VSP2 and second
Pressure VSN1 can be gradually reduced in response to tertiary voltage VSN, wherein the first medium voltage VSP2 is opened from the 3rd medium voltage VSP1
Beginning is gradually reduced, until by current mirror 314a to 314d strangulations in second voltage GND.Least for ensuring level shifting circuit
In 300, the first level shifter 310 is resistance to not over medium pressure element with operating voltage inside second electrical level shift unit 320
Pressure upper limit V_max, in the second transition period T2, the 3rd medium voltage VSP1 is more than electricity in the middle of the first medium voltage VSP2, first
Pressure VSP2 is more than tertiary voltage VSN more than the second medium voltage VSN1, the second medium voltage VSN1.In addition, in the second transition period
Between T2, the 3rd medium voltage VSP1 substantially remains unchanged.
Followed by, level shifting circuit 300 enters normal operating procedure.In the 3rd transition period T3, tertiary voltage VSN is turned
Shift to rated voltage level VRA.In the 3rd transition period T3, the first medium voltage VSP2, the second medium voltage VSN1 and the 3rd
Medium voltage VSP1 substantially remains unchanged.Least for the operating voltage ensured inside level shifting circuit 300 not over
The pressure-resistant upper limit V_max of medium pressure element, in the 3rd transition period T3, the 3rd medium voltage VSP1 is more than the first medium voltage
VSP2, the first medium voltage VSP2 are more than tertiary voltage VSN more than the second medium voltage VSN1, the second medium voltage VSN1.
Then, level shifting circuit 300 enters shutdown programm, and tertiary voltage VSN can gradually go up from rated voltage level VRA
It is raised to second voltage GND.In the second transition period T4 of shutdown programm, tertiary voltage VSN is less than critical level VTH and is more than
Rated voltage level.In the second transition period T4, the 3rd medium voltage VSP1 substantially remains unchanged.First medium voltage VSP2
And second medium voltage VSN1 be gradually increasing in response to tertiary voltage VSN.Similarly, least for ensuring level shifting circuit
Pressure-resistant upper limit V_max of the operating voltage not over medium pressure element inside 300, in the second transition period T4, electricity in the middle of the 3rd
Pressure VSP1 is more than the second medium voltage VSN1, the second medium voltage more than the first medium voltage VSP2, the first medium voltage VSP2
VSN1 is more than tertiary voltage VSN.
In the first transition period T5 of shutdown programm, tertiary voltage VSN is more than or equal to critical level VTH.At first turn
Change period T5, the 3rd medium voltage VSP1 substantially remains unchanged, and the first medium voltage VSP2 substantially remains unchanged or rings
Should be gradually increasing in tertiary voltage VSN.Second medium voltage VSN1 is gradually increasing in response to tertiary voltage VSN.Yu Benshi
Apply in example, the first medium voltage VSP2 remains unchanged and equal to the 3rd medium voltage VSP1, but in other embodiments, in first
Between voltage VSP2 can be designed as it is unequal in the 3rd medium voltage VSP1.Similarly, least for ensuring level shifting circuit
Pressure-resistant upper limit V_max of the operating voltage not over medium pressure element inside 300, in the first transition period T5, electricity in the middle of the 3rd
Pressure VSP1 is more than or equal to the first medium voltage VSP2.First medium voltage VSP2 is more than the second medium voltage VSN1.In second
Between voltage VSN1 be more than tertiary voltage VSN.
It should be noted that in the present embodiment, the first medium voltage VSP2 and the second medium voltage VSN1 can be with the 3
The change of voltage VSN and be gradually increasing or be gradually reduced, it means that the first medium voltage VSP2 and the second medium voltage VSN1 are
Be gradually increasing or gradually decrease down predetermined voltage level according to fixed slope, also, each voltage rise in different periods or
Declining followed slope can be with identical or differ.In addition, first level shifter 310 of the present embodiment boot program,
Although the mode of operation of normal operating procedure and shutdown programm coordinates the circuit framework disclosed by Fig. 5 to illustrate, this
Invention is not limited to this.Stated by the schematic block diagram disclosed by Fig. 3, can also obtain enough teachings, suggestion and implement
Illustrate, therefore repeat no more.
The step of Fig. 6 illustrates the voltage level conversion method of one embodiment of the invention flow chart.Referring to Fig. 3 to figure
6, the voltage level conversion method of the present embodiment is at least applied to the level shifting circuit disclosed by above-described embodiment, including as follows
Step.First, in step S600, during voltage conversion, the detection tertiary voltage VSN of the first level shifter 310, and root
Multiple medium voltages are produced according to testing result.Medium voltage herein includes the first medium voltage VSP2, the second medium voltage
VSN1 and the 3rd medium voltage VSP1.Then, in step S610, the first level shifter 310 is according to first voltage VSP,
Two voltage GND, the second medium voltage VSN1 and the 3rd medium voltage VSP1, the second control is converted to by the first control voltage Vctrl
Voltage Vctrl1 processed.Afterwards, in step S620, second electrical level shift unit 320 is according to the electricity of the first medium voltage VSP2 and the 3rd
Pressure VSN, the 3rd control voltage Vctrl2 is converted to by the second control voltage Vctrl1, with controlling level shifting circuit 300
Stage circuit 400.
In addition, the voltage level conversion method of embodiments of the invention can be by obtaining in the narration of Fig. 3 to Fig. 5 embodiments
Enough teaching, suggestion and implement to illustrate, therefore repeat no more.
In sum, in exemplary embodiment of the invention, the voltage detecting circuit of level shifting circuit is used to detect it
The voltage level of the power domain where output signal operation.The voltage detecting circuit voltage level that dynamically foundation is detected, from
It is dynamic adjust its level translator at different levels needed for operating voltage and output signal voltage level, so as to reach using relatively low resistance to
Element is pressed to realize the function of voltage level conversion.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any people in the art
Member, without departing from the spirit and scope of the present invention, when can make a little change and retouching, therefore protection scope of the present invention is when regarding
Scope of the appended claims the person of defining be defined.
Claims (19)
1. a kind of level shifting circuit, including：
One first level shifter, one first control voltage is converted into one second control electricity during a voltage conversion
Pressure, between a first voltage and a second voltage, second control voltage is between one first for wherein first control voltage
Between medium voltage and one second medium voltage；And
One second electrical level shift unit, is coupled to first level shifter, to during the voltage conversion by this second control
Voltage conversion is one the 3rd control voltage, and to control a next stage circuit, wherein the 3rd control voltage is between this in the middle of first
Between voltage and a tertiary voltage,
Wherein first level shifter detects the tertiary voltage, and produces multiple medium voltages according to a testing result,
The plurality of medium voltage includes first medium voltage, second medium voltage and one the 3rd medium voltage, and second electricity
Translational shifting device produces the 3rd control voltage according to the plurality of medium voltage.
2. level shifting circuit according to claim 1, included for one first transition period wherein during the voltage conversion,
First transition period, the tertiary voltage is more than or equal to a critical level.
3. level shifting circuit according to claim 2, wherein in first transition period, the 3rd medium voltage essence
On remain unchanged, first medium voltage substantially remain unchanged be gradually increasing in response to the tertiary voltage or gradually under
Drop, and second medium voltage is gradually increasing or is gradually reduced in response to the tertiary voltage.
4. level shifting circuit according to claim 2, wherein in first transition period, first medium voltage is more than
Second medium voltage, and second medium voltage is more than the tertiary voltage.
5. level shifting circuit according to claim 1, included for one second transition period wherein during the voltage conversion,
Second transition period, the tertiary voltage is less than a critical level and more than a rated voltage level.
6. level shifting circuit according to claim 5, wherein in second transition period, the 3rd medium voltage essence
On remain unchanged, and first medium voltage and the second medium voltage in response to the tertiary voltage be gradually increasing or gradually under
Drop.
7. level shifting circuit according to claim 5, wherein in second transition period, the 3rd medium voltage is more than
First medium voltage, first medium voltage is more than second medium voltage, and second medium voltage is more than the 3rd
Voltage.
8. level shifting circuit according to claim 1, included for one the 3rd transition period wherein during the voltage conversion,
3rd transition period, the tertiary voltage is converted to a rated voltage level.
9. level shifting circuit according to claim 8, wherein in the 3rd transition period, first medium voltage,
Two medium voltages and the 3rd medium voltage substantially remain unchanged.
10. level shifting circuit according to claim 8, wherein in the 3rd transition period, the 3rd medium voltage is big
In first medium voltage, first medium voltage is more than second medium voltage, and second medium voltage more than this
Three voltages.
11. level shifting circuits according to claim 1, wherein the 3rd medium voltage and the one of second medium voltage
Difference is less than the pressure voltage that the level shifting circuit can bear, and first medium voltage is small with a difference of the tertiary voltage
In the pressure voltage that the level shifting circuit can bear.
12. level shifting circuits according to claim 1, wherein the first level shifter includes：
One first voltage produces circuit, to produce the 3rd medium voltage according to the first voltage and the second voltage；
One voltage detecting circuit, is coupled to the first voltage and produces circuit, is used to detect the tertiary voltage produce the detection knot
Really, wherein the voltage detecting circuit cooperates with the first voltage to produce circuit, according to the 3rd medium voltage and the testing result come
Produce first medium voltage；And
One second voltage produces circuit, is coupled to the first voltage and produces circuit, to according to first medium voltage and this
Three voltages produce second medium voltage.
13. level shifting circuits according to claim 1, the wherein first voltage are more than the second voltage, second electricity
Pressure is more than the tertiary voltage.
A kind of 14. voltage level conversion methods, for a level shifting circuit, the method includes：
One first control voltage is converted into one second control voltage during a voltage conversion, wherein first control voltage is situated between
Between a first voltage and a second voltage, second control voltage is between one first medium voltage and one second medium voltage
Between；And
Second control voltage is converted into one the 3rd control voltage during the voltage conversion, to control the level shifting circuit
A next stage circuit, wherein the 3rd control voltage between first medium voltage and a tertiary voltage,
Before the step of second control voltage wherein is converted into three control voltages, the method also includes：
Detect the tertiary voltage, and multiple medium voltages are produced according to a testing result, the plurality of medium voltage includes should
First medium voltage, second medium voltage and one the 3rd medium voltage；And
The step of second control voltage is converted into three control voltages be according to the plurality of medium voltage come produce this
Three control voltages.
Include one first conversion during 15. voltage level conversion methods according to claim 14, the wherein voltage conversion
Period, in first transition period, the tertiary voltage is more than or equal to a critical level, and the 3rd medium voltage is substantially maintained
It is constant, and first medium voltage substantially remains unchanged or is gradually increasing or is gradually reduced in response to the tertiary voltage, and
And second medium voltage is gradually increasing or is gradually reduced in response to the tertiary voltage, and first medium voltage more than this
Two medium voltages, and second medium voltage is more than the tertiary voltage.
Include one second conversion during 16. voltage level conversion methods according to claim 14, the wherein voltage conversion
Period, in second transition period, the tertiary voltage less than a critical level and more than a rated voltage level, and this
Three medium voltages substantially remain unchanged, and first medium voltage and the second medium voltage in response to the tertiary voltage gradually
Rise or be gradually reduced, and the 3rd medium voltage be more than first medium voltage, first medium voltage more than this second
Medium voltage, and second medium voltage is more than the tertiary voltage.
Include one the 3rd conversion during 17. voltage level conversion methods according to claim 14, the wherein voltage conversion
Period, in the 3rd transition period, the tertiary voltage is converted to a rated voltage level, and first medium voltage,
Two medium voltages and the 3rd medium voltage substantially remain unchanged, and the 3rd medium voltage is more than the first centre electricity
Pressure, first medium voltage is more than second medium voltage, and second medium voltage is more than the tertiary voltage.
18. voltage level conversion methods according to claim 14, wherein the 3rd medium voltage and the second centre electricity
One difference of pressure is less than the pressure voltage that the level shifting circuit can bear, first medium voltage and the one of the tertiary voltage
Difference is less than the pressure voltage that the level shifting circuit can bear.
19. voltage level conversion methods according to claim 14, the wherein first voltage are more than the second voltage, and this
Two voltages are more than the tertiary voltage.
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| CN201310263267.5A CN104253608B (en) | 2013-06-27 | 2013-06-27 | Level shifting circuit and its voltage level conversion method |
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| JP6656898B2 (en) * | 2015-11-26 | 2020-03-04 | ラピスセミコンダクタ株式会社 | Level shift circuit and display driver |
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|---|---|---|---|---|
| US5917358A (en) * | 1997-12-09 | 1999-06-29 | Motorola, Inc. | Method and output buffer with programmable bias to accommodate multiple supply voltages |
| CN1440120A (en) * | 2002-02-20 | 2003-09-03 | 三菱电机株式会社 | Driving circuit with low current loss |
| CN101504867A (en) * | 2008-02-06 | 2009-08-12 | 恩益禧电子股份有限公司 | Level shift circuit, and driver and display system using the same |
| CN102957419A (en) * | 2011-08-19 | 2013-03-06 | 德克萨斯仪器股份有限公司 | Radiation-tolerant level shifting |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4985212B2 (en) * | 2006-08-24 | 2012-07-25 | 富士通セミコンダクター株式会社 | Semiconductor integrated circuit device and level shift circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5917358A (en) * | 1997-12-09 | 1999-06-29 | Motorola, Inc. | Method and output buffer with programmable bias to accommodate multiple supply voltages |
| CN1440120A (en) * | 2002-02-20 | 2003-09-03 | 三菱电机株式会社 | Driving circuit with low current loss |
| CN101504867A (en) * | 2008-02-06 | 2009-08-12 | 恩益禧电子股份有限公司 | Level shift circuit, and driver and display system using the same |
| CN102957419A (en) * | 2011-08-19 | 2013-03-06 | 德克萨斯仪器股份有限公司 | Radiation-tolerant level shifting |
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