CN104253169B - Without main grid, high efficiency back contact solar cell module, assembly and preparation technology - Google Patents
Without main grid, high efficiency back contact solar cell module, assembly and preparation technology Download PDFInfo
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- CN104253169B CN104253169B CN201410508792.3A CN201410508792A CN104253169B CN 104253169 B CN104253169 B CN 104253169B CN 201410508792 A CN201410508792 A CN 201410508792A CN 104253169 B CN104253169 B CN 104253169B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to area of solar cell, particularly to without main grid, high efficiency solar cell module, assembly and preparation technology thereof.This solar module includes cell piece and electric connection layer, the shady face of described cell piece has the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer, it is characterized in that: described electric connection layer includes that through hole, conductor wire, described conductor wire are respectively arranged at the front and back of electric connection layer；Front side conductive line electrically connects with any one electrode, and back side conductor wire is electrically connected with another electrode by the conducting medium in described through hole, and described electric connection layer is insulating materials.Its beneficial effect be to provide a kind of can effectively prevent P emitter stage and the short circuit of N emitter stage, low cost, resistance to hidden split, the solar module of high efficiency, high stability.
Description
Technical field
The present invention relates to area of solar cell, particularly to without main grid, high efficiency back contact solar cell module, group
Part and preparation technology thereof.
Background technology
The energy is the material base of mankind's activity, along with development and the progress of human society, to the demand of the energy with
Day all increasings.Traditional fossil energy belongs to non-renewable energy resources and has been difficult to continue to meet the demand of social development, the therefore whole world
Various countries are in recent years to new forms of energy and the research of renewable origin with utilize burning the hotest.Wherein solar energy generation technology has the sun
Light be converted into electric power, use simple and environmentally-friendly pollution-free, energy utilization rate is high etc., and advantage is particularly subject to universal attention.Too
It is to use large-area P-N junction diode to produce photo-generated carrier generating in the case of sunlit that sun can generate electricity.
In prior art, occupy an leading position and the crystal-silicon solar cell of large-scale commercial, its launch site and launch site
Electrode is respectively positioned on battery front side (phototropic face), i.e. main grid, auxiliary grid line and is respectively positioned on battery front side.Due to solar energy level silicon material electronics
Diffusion length is shorter, and launch site is positioned at battery front side and is conducive to improving the collection efficiency of carrier.But the grid due to battery front side
Line blocks part sunlight (about 8%), so that the effective area of shining light of solar cell reduces and have lost one therefrom
Portion of electrical current.Additionally when cell piece is connected, need to receive another block battery with tin-coated copper strip from the face bonding of one piece of battery
The back side, if using the thicker tin-coated copper strip can be overly hard and cause the fragmentation of cell piece due to it, if but with the widest plating
Tin copper strips can cover again too much light.Therefore, which kind of tin plating welding is used all can to produce the energy that series resistance is brought
Loss and optical loss, be unfavorable for the sheet of cell piece simultaneously.In order to solve above-mentioned technical problem, those skilled in the art will
Front electrode transfers to cell backside, develops back contact solar cell, and back contacts solar cell refers to the launch site of battery
Electrode and base electrode are respectively positioned on a kind of solar cell of cell backside.Back contact battery has many good qualities: 1. efficiency is high, due to
Completely eliminate the shading loss of front gate line electrode, thus improve battery efficiency.2. the sheet of battery can be realized, series connection
All at cell backside, there is not the connection from front to the back side and can use thinner silicon chip in the metal connector device used, from
And reduce cost.The most more attractive, the front color of battery is uniform, meets the esthetic requirement of consumer.
Back contacts solar cell includes the various structures such as MWT, EWT and IBC.Back contacts solar cell large-scale commercial applications metaplasia
That produce it is crucial that be the series connection of back contacts solar cell being got up and be fabricated to solar components of how high efficiency, low cost.MWT
The common preparation method of assembly is to use composite conducting backboard, applies conducting resinl in conductive backings, corresponding on top of the encapsulation material
Position punching make conducting resinl run through encapsulating material, back contacts solar cell is accurately placed on encapsulating material, makes conductive back
Conductiving point on plate is contacted by conducting resinl with the electrode on back contacts solar cell, then lays upper strata EVA on cell piece
And glass, then module upset entrance laminating machine good for whole stacking is laminated.There is following defect in this technique: 1, institute
The composite conducting backboard used is composite conducting metal forming in backboard, usually Copper Foil, and needs Copper Foil is carried out laser incising
Erosion or chemical etching.Owing to laser ablation is the most operable for simple graph, slow for complex pattern then etching speed, produce effect
Rate is low, and chemical etching then exists that needs are previously prepared complex-shaped and corrosion resistant mask, environmental pollution and corrosive liquid are to height
The etching problem of molecule base material.The conductivity type backplane manufacturing process manufactured in this way is complicated, and cost is high.2, need too
After sun cell piece, the encapsulating material of layer is punched out to make conducting resinl run through encapsulating material, owing to encapsulating material is typically viscoelastic
Body, will carry out accurate punching difficulty very big.3, need accurate spot gluing equipment by conductive glue in the relevant position of backboard, right
The MWT this back contacts less battery of point can also operate, to back contact battery that back contacts point area is little, quantity is big such as IBC
Use spot gluing equipment cannot realize at all.
P-N junction is positioned over cell backside by IBC technology, front without any block decrease again that electronics collects simultaneously away from
From, therefore can increase substantially cell piece efficiency.IBC battery uses shallow diffusion, is lightly doped and SiO in front2The skills such as passivation layer
Art reduces recombination losses, at cell backside, diffusion region is limited in less region, and these diffusion regions become dot matrix at cell backside
Arrangement, metal contact in diffusion region is rendered as large number of fine contact point in being limited in the least scope.IBC battery reduces
The area in the re-diffusion district of cell backside, the saturated dark current of doped region can significantly reduce, open-circuit voltage and conversion effect
Rate is improved.Make electric current shorten, greatly in the transmission range of back surface by large number of little contact point collected current simultaneously
The series resistance of amplitude reduction assembly.
IBC back contact battery enjoys industry to pay close attention to, owing to having the unapproachable high efficiency of conventional solar cell
Through becoming the study hotspot of a new generation's solar battery technology.But IBC solar module P-N junction position phase in prior art
Neighbour is relatively near and all at the cell piece back side, it is difficult to connects IBC battery module and is prepared as assembly.For solving the problems referred to above,
Prior art also occurs in that the multiple improvement to IBC back contact solar cell, Sunpower company once invented adjacent P or
N emitter stage is guided to battery edge by the silver connected electric current the most at last of the slurry thin grid line of serigraphy, prints relatively at cell piece edge
Big solder joint re-uses connection band and carries out welding series connection, and after screen printing technique is invented, current field of solar energy uses always
Screen printing technique forms the confluxing of electric current, such as the patent 201310260260.8,201310606634.7 of up-to-date application,
201410038687.8,201410115631.8, do not make any improvement.
But, screen printing technique uses thin grid line to carry out electric current collection, still can use on 5 cun of cell pieces, but existing
Have on the silicon chip of generally popular in technology 6 cun or bigger and will run into degradation problem under series resistance rising and fill factor, curve factor,
Manufactured component power is caused seriously to reduce.IBC battery in the prior art can also adjacent P or N emitter stage it
Between the relatively wide silver slurry grid line of serigraphy reduce series resistance, but owing to the increase of silver consuming amount can bring drastically going up of cost
Rising, the widest grid line also can produce the insulation effect between P-N and be deteriorated, easily the problem of electric leakage.
Patent US20110041908A1 discloses a kind of back side and has elongated interdigital emitter region and base region
Back contact solar battery and production method, there is Semiconductor substrate, the backside surface of Semiconductor substrate is provided with carefully
Long base region and elongated emitter region, base region is base semiconductor type, and emitter region is provided with and described base stage
The emitter semiconductor type that semiconductor type is contrary；Elongated emitter region is provided with for making electrical contact with the elongated of emitter region
Emitter electrode, elongated base region is provided with the elongated base electrode for making electrical contact with base region；The most elongated emitter region
Territory has the structure width less than elongated emitter electrode, and the most elongated base region has than described elongated base electrode
Little structure width.However it is necessary that arranging substantial amounts of electric-conductor carrys out effective collected current, therefore causes manufacturing cost to increase, work
Skill step is complicated.
Patent EP2709162A1 discloses a kind of solar cell, applies to back contact solar cell, discloses each other
Separate and alternately arranged electrode contact unit, connect electrode contact unit by longitudinal connector, form " work " shape electrode
Structure；But this kind of structure has carried out twice connection on cell piece, it is that cell piece is connected with electrode contact unit, so for the first time
After also need to connect electrode contact unit by connector, and " work " shape electrode intersects, and twice connection brings technique
On complexity, and cause too much electrode contact point, be likely to result in " disconnection " or " wrong even ", be unfavorable for the back contacts sun
The overall performance of energy battery.
Patent WO2011143341A2 discloses a kind of back contact solar cell, including substrate, and multiple adjacent P doping
Layer and N doped layer are positioned at substrate back, P doped layer and N doped layer and metal contact layer stacking, and P doped layer and N doped layer
And it is provided with passivation layer between metal contact layer, described passivation layer has substantial amounts of nanometer connecting hole, described nanometer connecting hole
Connect P doped layer and N doped layer and metal contact layer；But this invention utilizes nano-pore to connect metal contact layer can make resistance increase
Greatly, also manufacturing process complexity, manufacture equipment there is is higher requirement.This invention can not multi-disc solar cell with electrically connect
Layer is integrated into a module, and is not only convenient for being assembled into assembly after cell piece is integrated into solar module, Er Qiebian
In the connection in series-parallel that adjusting module is asked, thus be conducive to adjusting the series-parallel system of cell piece, reduction group in solar module
The connection resistance of part.
And prior art can be formed with the wire that P emitter stage and N emitter stage connect and intersect or adjacent relatively near, the sun
Can battery use a period of time aging and external force touch after easily form short circuit, have a strong impact on the globality of battery component
Energy.
As can be seen here, one can effectively prevent P district current collector and the current collector short circuit of N district, low cost, low series electrical
Resistance, resistance to hidden split, back contact solar cell assembly that high efficiency, high stability, easy technology produce and preparation technology thereof are mesh
Before need badly and solve the technical problem that.
Summary of the invention
Present invention aims to the deficiencies in the prior art, it is provided that one can effectively prevent P district current collector and N
District's current collector short circuit, low cost, low series resistance, resistance to hidden split, the simple back contacts of high efficiency, high stability, preparation technology
Solar module, assembly and preparation technology thereof.
The main technical schemes of a kind of back contact solar cells module that the present invention provides is:
A kind of without main grid, high efficiency back contact solar cell module, this solar module includes cell piece and electricity
Articulamentum, the shady face of described cell piece has the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer,
It is characterized in that: described electric connection layer includes through hole or runs through groove, conductor wire, and described conductor wire is respectively arranged at electric connection layer
Front and back；Front side conductive line electrically connects with any one electrode, and back side conductor wire is by described through hole or runs through in groove
Conducting medium electrically connect with another electrode, described electric connection layer is insulating materials.
The one of the present invention can also use following attached technical side without main grid, high efficiency back contact solar cell module
Case:
The conductor wire that front wire is more than two electrically connected with a doped layer；With running through that another doped layer electrically connects
Hole or run through through hole that groove is more than two rows or run through groove.
Conductor wire on described electric connection layer is the shape of bending.
It is provided with secondary grid or conducting particles on described conductor wire, is used for collecting electronics, described secondary grid or conducting particles
It is connected with electrode.
Described through hole or run through the backside area of groove more than through hole or the front face area that runs through groove, described electric connection layer
For plastics.
Described front side conductive line is provided with conductive bumps, and described conductive bumps is electrically connected with described P electrode or described N electrode
Connect.
The height of described conductive bumps structure is 250 microns～400 microns.
Any one in cylinder, cone, parallelepiped or prism of the shape of described conductive bumps.
Described P electrode is point-like P electrode or line style P electrode, and described N electrode is point-like N electrode or line style N electrode.
A diameter of 0.4mm～1.5mm of described point-like P electrode, two adjacent point-like P that described same conductor wire connects
Distance between electrode is 0.7mm～10mm, and the width of described line style P electrode is 0.4mm～1.5mm；Described point-like N electrode
A diameter of 0.4mm～1.5mm, on described same conductor wire connect two adjacent point-like N electrode between distance be 0.7mm～
10mm, the width of described line style N electrode is 0.4mm～1.5mm.
Total number of described point-like P electrode and described point-like N electrode is 1000～40000.
Described Spot electrodes or wire-type of electrode are any one in silver slurry, conducting polymer, conducting resinl or scolding tin.
The distance conductor wire that with described N electrode be connected between adjacent with the conductor wire that described P electrode is connected is 0.1mm
～20mm.
The material of described conductor wire is any one in copper, aluminium, steel, copper cover aluminum or copper covered steel；Described conductor wire transversal
Face is generally circular in shape, square or any one in ellipse；The circumscribed circle diameter of described conductor wire shape of cross section is 0.05mm
～1.5mm.
Described conductor wire surface is coated with low melting material or is coated with conducting resinl.
Described low melting material is any one in tin, leypewter, sn-bi alloy or tin-lead silver alloy or appoints several
Combination；Coating or conductive adhesive layer thickness are 5 μm～50 μm.
The quantity of described conductor wire is 10～500.
Described electric connection layer is provided with P bus bar electrode and N bus bar electrode, and described P bus bar electrode and described N conflux
Strip electrode is arranged at described electric connection layer both sides.
The surface of described bus bar electrode has concaveconvex shape.
Described conducting medium includes any one in silver slurry, conducting resinl or scolding tin or appoints several combinations, described conducting resinl
For low resistivity conductive bonded adhesives, it is mainly composed of conducting particles and polymeric adhesive.
Conducting particles in described conducting resinl is any one in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper or appoints
Several combinations；Being shaped as of described conducting particles is spherical, in sheet, olive-shaped, needle-like any one or appoint several combinations；
The particle diameter of conducting particles is 0.01 μm～5 μm.
Polymeric adhesive in described conducting resinl is epoxy resin, polyurethane resin, acrylic resin, organic siliconresin
In any one or appoint several combination, bonding agent can carry out heat cure or photocuring.
Thermoplastic resin or thermosetting resin it is provided with at insulating barrier between described P electrode and described N electrode.
Described resin is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, polyurethane resin, acrylic acid tree
Any one in fat, organic siliconresin.
A kind of main technical schemes without main grid, high efficiency back contact solar cell assembly that the present invention provides is:
Including the front layer material from top to bottom connected, encapsulating material, solar cell layer, encapsulating material, backsheet, its
It is characterised by: described solar cell layer includes that several solar modules, described solar module are above-mentioned skill
The solar module that art scheme is limited, described solar module is electrically connected by the busbar of electric connection layer both sides
Connect.
The one that the present invention provides can also include techniques below side without main grid, high efficiency back contact solar cell assembly
Case:
The cell piece number of described solar cell layer is 9～120, wherein, including 1～120 battery module, described electricity
Pond module includes 5～120 cell pieces.
The quantity of the cell piece number in cell piece number that assembly comprises, battery module number, battery module can by with
Lower equations；Z represents the cell piece number that battery component is total, and Y represents the number of described battery module, and X represents described battery
The cell piece number that module comprises, wherein 1≤Y≤X≤Z；X × Y=Z；As X=1, a length of one block of electricity of a conductor wire
The length of pond sheet；The integrated connection as Y=1, i.e. one conductor wire connects all cell pieces of battery component.
Without main grid, the preparation method of high efficiency back contact solar cell assembly, comprise the following steps:
Step one: prepare solar module, prepares through hole having on insulating properties electric connection layer or runs through groove；
Some conductor wires arranged in parallel are stretched and tightens, conductor wire bonding agent is bonding with the front of electric connection layer, in electrical connection
The back side of layer is bonding with through hole or run through the conductor wire that groove is connected；At through hole or run through in groove filling conducting medium；
The front side conductive line of electric connection layer is electrically connected with described P electrode or N electrode, through hole or run through the conduction in groove
Medium electrically connects with another doped layer；Described P bus bar electrode and described N bus bar electrode are arranged at described electric connection layer two
Side, is prepared as solar module；
Step 2: prepare solar cell layer, solar module step 1 prepared is electrically connected by bus bar electrode
Connect, be prepared as solar cell layer；
Step 3: enter by front layer material, encapsulating material, solar cell layer, encapsulating material, the order of backsheet successively
Row stacking, lamination obtains battery component.
The preparation method without main grid, high efficiency back contact solar cell assembly that the present invention provides can also include following
Technical scheme:
Described in step one, the P electrode on cell piece and N electrode have mirror symmetrical structure in the horizontal plane, work as cell piece
Quantity more than 1 time, the mode of assembled battery sheet is, after being connected with electric connection layer by first piece of cell piece, by second piece of battery
Sheet revolves turnback, two panels cell piece justified margin at horizontal plane, makes the P electrode on second piece of cell piece and first piece of cell piece
On N electrode on a conductor wire, the most normally place the 3rd back contact battery, make the P electrode on the 3rd piece of cell piece
With the N electrode of second piece of cell piece on a conductor wire, repeat aforesaid operations and form cascaded structure, form solar cell
Layer.
Described conductor wire uses plating process to be coated with low melting material, and described low melting material is scolding tin, leypewter, tin
Any one in pb-ag alloy, sn-bi alloy or tin-lead silver alloy, heated after make conductor wire with P electrode or N electrode by weldering
Tin is fixed, and makes conductor wire electrically connect with cell piece.
Described heating fixation procedure uses heating cushion in cell piece front；The heating-up temperature of described heating cushion is 40～80
℃。
Described mode of heating is any one in infra-red radiation, Resistant heating or Hot-blast Heating, and heating-up temperature is 150
～500 DEG C.
The parameter of described lamination is set according to the vulcanization characteristics of encapsulating material, and described encapsulating material is EVA, is 145
DEG C laminated 16 minutes.
Plating process is any one in hot-dip, plating or chemical plating.
Described through hole or run through groove by punch forming or by laser beam etching shaping.
The enforcement of the present invention includes techniques below effect:
1, the present invention proposes a kind of to use the technology without main grid bilateral structure electric connection layer to realize large scale back contacts too
The series connection in positive electricity pond the method making corresponding solar components.P or N that this technology need not IBC battery is adjacent launches
Between pole, serigraphy carefully silver slurry grid line, can be greatly reduced the consumption of silver slurry, thus reduce the manufacturing cost of IBC battery also
Simplify manufacturing process flow.
2, back contact solar cell used herein is without main grid, is substantially reduced the usage amount of silver slurry, makes back contacts
The manufacturing cost of battery substantially reduces；One is that transformation efficiency is high, and two is that packaging efficiency is high, eliminates the shading of front gate line electrode
Loss, thus improve battery efficiency；
3, in the present invention, electrode of solar battery contacts with electric connection layer multiple spot distributing, reduces electronics and collects distance, greatly
The series resistance of amplitude reduction assembly.Also can realize the sheet of battery, the metal connector device being used in series all is carried on the back at battery
, there is not the connection from front to the back side and can use thinner silicon chip, thus reduce cost in face；
4, practicality is higher, and the back contacts solar cell of the present invention is generally applicable to the various structures such as MWT, EWT and IBC；
5, resistance to hidden splitting, the integrated photovoltaic system of assembly that the technology of the present invention produces can thoroughly be avoided because one piece of cell piece is sent out
Life is hidden to be split and loses certain electric current and cause the electric current of whole group of string that the problem significantly reduced will occur, owing to this invents institute
Propose achieves the Mulit-point Connection between electric conductor and cell piece without main grid two-sided back of the body winding displacement technology, can improve whole system
The hidden of generation during manufacturing, transport, install and using is split and the tolerance of fine fisssure.
Secondary grid or conducting particles the migration distance that can reduce electronics and hole is set, strengthen cell piece and collect electricity
The ability of son.Bus bar electrode concaveconvex shape the contact area that can increase electrode is set, reduce resistance.
This technology need not use conductive adhesive technique, thus save the cost of conducting resinl and avoid conducting resinl needs
The series of technical such as Accurate Points glue.This technology can realize welding between electric conductor with cell piece, can significantly carry
The long-term reliability of high assembly.In assembly prepared by this technology, being Mulit-point Connection between IBC battery and electric conductor, tie point divides
Cloth is more dense, can reach thousand of even several ten thousand, more optimizes in the hidden path split with the conduction of fine fisssure position electric current of silicon chip, because of
This loss caused based on fine fisssure is greatly reduced, the Quality advance of product.Generally in photovoltaic system, there is hidden splitting in cell piece
Rear cell piece upper part region can depart from main grid, and the electric current that this region produces will be unable to be collected.Photovoltaic system is all
The mode using series connection forms matrix, has obvious bucket effect, when one piece of cell piece occurs hidden split and lose certain electricity
During stream, the electric current of whole group of string will occur significantly to reduce, thus cause the generating efficiency of whole group of string to be greatly lowered.Use
The photovoltaic system that the assembly of this technology production is integrated can thoroughly avoid problems to occur, owing to this invents the dereliction proposed
Grid two-sided back of the body winding displacement technology achieves the Mulit-point Connection between electric conductor and cell piece, make whole photovoltaic system to manufacture,
Transport, install and use during produce hidden splitting with hallrcuts, there is high tolerance.Can be by a simply example
Illustrating, the solar components that conventional art produces similarly is common glass, and a point has been crashed monolithic glass and just pulverized
, seem then doubling safety glass with the assembly produced without main grid two-sided back of the body winding displacement technology, the fragmentation of a point is seen in appearance
Get up unsightly, but the function keeped out wind and rain of whole glass also exists.The traditional battery pack string technique of this technological break-through,
Make battery arrangement freer, more closely, use the assembly of above-mentioned technology to be expected to the least lighter, for the project development of downstream, this
Mean that floor space less in installation, lower roof load-bearing requirements and lower human cost.Winding displacement is carried on the back without main grid
Technology can solve low cost, the connectivity problem of high efficiency back contacts solar cell, by using copper cash to replace silver main grid to drop
Low cost, it is achieved the industrial-scale production that back contacts solar cell is real, reduces cost, for photovoltaic while improving efficiency
System provides in hgher efficiency, cost is lower, stability is higher, resistance to hidden split outstanding photovoltaic module, is greatly promoted photovoltaic system
Competitiveness with traditional energy.
Back contact solar cell overall structure used herein is basically identical with conventional back contact solar cell,
But after back contact solar cell completes silver slurry sintering and power stepping is tested its launch site electrode and base electrode it
Between insulating barrier at thermoplasticity or heat cured resin in serigraphy.On the one hand this resin can play separation insulating emitter district
Electrode and the effect of base electrode, on the one hand play bonding back contact solar cell sheet and the work of backboard in lamination process
With.
Accompanying drawing explanation
Fig. 1. point back contact rear surface of solar cell schematic diagram
Fig. 2. line style back contact solar cell schematic rear view
Fig. 3. (Fig. 3 a, conductor wire sectional view, Fig. 3 b, two-layer conductor wire sectional view, Fig. 3 c, lead for three layers conductor wire sectional view
Wire cross-sectional figure)
Fig. 4. the electric connection layer schematic cross-section of bilateral structure
Fig. 5. electric connection layer and the schematic cross-section of cell piece electrode connection plane in battery module
Fig. 6. solar module schematic cross-section
Fig. 7. load onto the solar module schematic diagram of battery module
1, for metal materials such as copper, aluminium or steel, 2, be the metal materials such as the aluminium different from 1 or steel；3, for tin, tin-lead, tin
Bismuth or tin-lead silver metal solder；4, n-type doping layer；41, line style N electrode；42, point-like N electrode；43；N bus bar electrode；
5, p-type doping property；51, line style P electrode；52, point-like P electrode；53, P bus bar electrode；6, the matrix silicon chip of back contact battery；
7, front side conductive line；8, back side conductor wire.9, conducting medium；10, backsheet；11, front layer material；12, electric connection layer；13、
Encapsulating material.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described reality
Execute example and be intended merely to facilitate the understanding of the present invention, and it is not played any restriction effect.
Embodiment 1
Seeing Fig. 1, Fig. 3, Fig. 4, Fig. 5, the one that the present embodiment is provided is without main grid, high efficiency back contact solar cell
Module, this solar module includes cell piece and electric connection layer 12, and the shady face of described cell piece has and p-type doped layer
The P electrode connected and the N electrode being connected with n-type doping layer.It is provided with at insulating barrier between described P electrode and described N electrode
Thermoplastic resin or thermosetting resin, described resin is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, poly-ammonia
Any one in ester resin, acrylic resin, organic siliconresin, the present embodiment optimal ethylene-acetate ethylene copolymer, can prevent
Short circuit between electrode.
Seeing Fig. 1, described cell piece is n type single crystal silicon matrix silicon, and described P electrode is point-like P electrode 52, described N electrode
The back side of silicon substrate, point-like P electrode 52 He it is located at for point-like N electrode 42, described point-like P electrode 52 and described point-like N electrode 42
Point-like N electrode 42 is arranged alternately with each other the back side at silicon substrate, and point-like P electrode 52 is provided with positive electrode contact point, point-like N electrode
42 are provided with negative electrode contact point.A diameter of 0.8mm of point-like P electrode 52, the distance between adjacent point-like P electrode 52 is
1.5mm.A diameter of 0.7mm of point-like N electrode 42, the distance between adjacent point-like N electrode 42 is 1.5mm, and point-like P electrode 52 is even
Centre distance between line and point-like N electrode 42 line is 15mm, above-mentioned Spot electrodes design parameter be arranged on the present embodiment
Middle convenient connection, can preferable collected current.Cell conversion efficiency is 20.2%.
Seeing Fig. 3 and Fig. 4, described electric connection layer 12 includes that through hole, conductor wire, described conductor wire are respectively arranged at and are electrically connected
Connect the front and back of layer 12；The shape of cross section of described conductor wire be circular, square, oval in any one, this enforcement
Example circular；Described conductor wire can be the shape of bending, and such as zigzag so can increase conductor wire and mix with cell piece
The collection of the gross contact area between diamicton, beneficially electronics.Described electric connection layer 12 can be that pressure-sensitive insulating materials makes conduction
Line can be pressed in electric connection layer 12.Front side conductive line electrically connects with point-like P electrode, and back side conductor wire is by described through hole
Conducting medium 9 electrically connect with point-like N electrode.Described conducting medium 9 includes any one in silver slurry, conducting resinl or scolding tin, this
The preferred conducting resinl of embodiment, the conducting particles in described conducting resinl is appointing in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper
The combination of one or more, the preferred copper of the present embodiment；Described conducting resinl is low resistivity conductive bonded adhesives, and it is mainly composed of leads
Charged particle and polymeric adhesive；Being shaped as of described conducting particles is spherical, in sheet, olive-shaped, needle-like any one or several
The combination planted, the preferred needle-like of the present embodiment；The particle diameter of conducting particles is 0.01 μm～5 μm, the present embodiment preferably 5 μm.Described lead
Polymeric adhesive in electricity glue is one-component or the epoxy resin of double-component, polyurethane resin, acrylic resin, organosilicon tree
Any one in fat, the present embodiment preferred epoxy, and heat cure or photocuring can be carried out, preparation technology is simple.
Seeing Fig. 3, the conductor wire that the present embodiment uses is the coating conductor wire with three-decker, leading including innermost layer
The diameter of wire is 0.8mm, the layers of copper in intermediate layer, and thickness is 0.2mm, and outermost layer is tin coating, and thickness is 0.3mm.Coating conducts electricity
The cross-sectional area of line is circular, diameter 1.3mm.Total number of described point-like P electrode 52 and described point-like N electrode 42 is 1000
～40000, the present embodiment preferably 2080；Described Spot electrodes is scolding tin；Described electric connection layer 12 is provided with P busbar electricity
Pole and N bus bar electrode, described P bus bar electrode and described N bus bar electrode are arranged at described electric connection layer 12 both sides；Described
The surface of bus bar electrode has concaveconvex shape, can increase the Ohmic contact area of bus bar electrode, reduces resistance.Mix with one
The front side conductive line of diamicton electrical connection can be one or the conductor wire of more than two；The through hole electrically connected with another doped layer
Can be through holes more than one or two rows, the front wire that the present embodiment preferably electrically connects with P doped layer be a conduction
Line, the through hole electrically connected with N doped layer is row's through hole.It is provided with secondary grid on described conductor wire, is used for collecting electronics, institute
State secondary grid to be connected with electrode contact point.The backside area of described through hole can be more than or equal to the front face area of through hole, this
The backside area of through hole described in embodiment, more than the area in described through hole front, can reduce resistance.Described front is led
Electric wire is provided with conductive bumps, and described conductive bumps electrically connects with described point-like P electrode 52 or described point-like N electrode 42；Institute
The height stating conductive bumps structure is 250 microns～400 microns, the present embodiment preferably 300 microns, the shape of described conductive bumps
Any one in cylinder, cone, parallelepiped, prism, the preferred cone of the present embodiment.Described conductive bumps
The compact siro spinning technology being beneficial to electric conductivity with cell piece electrode is set.
See that the one that Fig. 6, the present embodiment are provided includes by up to without main grid, high efficiency back contact solar cell assembly
The front layer material 11 of lower connection, encapsulating material 13, solar cell layer, encapsulating material 13, backsheet 10, described solar-electricity
Pond layer includes several solar modules.Described solar module can comprise more than one cell piece, institute
The some cell pieces stated in solar module connect with an electric connection layer 12.Pass through between multiple solar modules
Busbar on electric connection layer 12 connects.
A kind of without main grid, the preparation method of high efficiency back contact solar cell assembly:
Punch forming through hole on electric connection layer 12；Some conductor wires arranged in parallel are stretched and tightens, by conductor wire
Bonding with the front of electric connection layer 12 with bonding agent, the bonding conductor wire being connected with through hole at the back side of electric connection layer 12；?
Through hole is filled conducting medium 9；As shown in Figure 4；
Concrete mode is: successively the many piece 616mm length corresponding with the electrode in cell piece are had the straight of three-decker
Footpath is that the conductor wire of the tin coating of 1.3mm stretches to tighten and is bonded in described electrical connection according to the back side figure of back contacts solar cell
The front of layer 12；Conducting medium 9 is filled in through hole；Same by the many piece 616mm length corresponding with the electrode in cell piece again
The coating conductor wire of type is bonded in the back side and the described through hole of described electric connection layer 12 according to back contacts solar cell
Conducting medium 9 electrically connects；
The mode of assembled battery sheet is, after being connected with electric connection layer 12 by first piece of cell piece, is existed by second piece of cell piece
Horizontal plane rotation turnback, two panels battery edge aligns, and makes the P electrode on second piece of cell piece and the N electricity on first piece of cell piece
The 3rd back contact battery, on a conductor wire, is the most normally placed in pole, make P electrode on the 3rd piece of cell piece with second piece
The N electrode of cell piece, on a conductor wire, repeats aforesaid operations and forms cascaded structure, form solar cell layer.Described
Point-like P electrode 52 or the point-like N electrode 42 of solar cell are welded with the front side conductive line electric iron of described electric connection layer 12,
Another electrode contact point electrically connects with the conducting medium 9 in the through hole of described electric connection layer 12；Welding temperature be 300～
400 DEG C, the present embodiment preferably 300 DEG C, welding process can use heating cushion with the prevention battery two sides temperature difference in cell piece front
Excessive causing the broken or hidden of cell piece to split, heating pad temperature controls at 40～80 DEG C, the present embodiment preferably 70 DEG C.By described P
Bus bar electrode and described N bus bar electrode are arranged at described electric connection layer 12 both sides, are prepared as solar module；Such as figure
Shown in 5；
Solar module manufacture completed uses the general busbar of routine of 5 × 0.22mm cross-sectional area to go here and there
Connection, produces 8 strings, often string 4, the cell piece module of totally 32 back contacts.Successively according to glass, EVA, cell piece module, EVA
Carry out stacking and visual examination with the order of backsheet 10, the module after stacking is sent into laminating machine and is laminated, lamination ginseng
Several vulcanization characteristics according to EVA are set, usually 145 DEG C of laminated 16 minutes.The module finally completed by lamination is carried out
Metal edge frame is installed, terminal box is installed and carries out power test and visual examination.Obtain solar module；Such as Fig. 6 and Fig. 7
Shown in.
The power parameter of above-mentioned 32 back contacts assemblies is as follows:
Open-circuit voltage Uoc (V) 22.25
Short circuit current Isc (A) 9.25
Operating voltage Ump (V) 17.27
Operating current Imp (A) 9.08
Peak power Pmax (W) 156.78
Fill factor, curve factor 76.18%
Embodiment 2
Seeing Fig. 2, Fig. 3, Fig. 4, Fig. 5, the one that the present embodiment is provided is without main grid, high efficiency back contact solar cell
Module, this solar module includes cell piece and electric connection layer 12, and the shady face of described cell piece has and p-type doped layer
The P electrode connected and the N electrode being connected with n-type doping layer.It is provided with at insulating barrier between described P electrode and described N electrode
Thermoplastic resin or thermosetting resin, described resin is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, poly-ammonia
Any one in ester resin, acrylic resin, organic siliconresin, the present embodiment optimal ethylene-acetate ethylene copolymer, can prevent
Short circuit between electrode.
Seeing Fig. 1, described cell piece is n type single crystal silicon matrix silicon, and described P electrode is line style P electrode 51, described N electrode
The back side of silicon substrate, line style P electrode 51 He it is located at for line style N electrode 41, described line style P electrode 51 and described line style N electrode 41
Line style N electrode 41 is arranged alternately with each other the back side at silicon substrate, and line style P electrode 51 is provided with positive electrode contact zone, line style N electrode
41 are provided with negative electrode contact zone.Line style P electrode 51 width is 0.7mm, and the distance between adjacent line style P electrode 51 is 2.5mm.
Line style N electrode 41 width is 0.5mm, and the distance between adjacent line style N electrode 41 is 2.5mm, line style P electrode 51 line and line style
Centre distance between N electrode 41 line is 1.5mm, and the setting of above-mentioned Spot electrodes design parameter the most conveniently connects
Connect, can preferable collected current.Cell conversion efficiency is 20.2%.
Seeing Fig. 3 and Fig. 4, described electric connection layer 12 includes running through groove, conductor wire, and described conductor wire is respectively arranged at and is electrically connected
Connect the front and back of layer 12；Described electric connection layer 12 is insulating materials, and front side conductive line electrically connects with line style P electrode, the back side
Conductor wire pass through described in run through in groove conducting medium 9 electrically connect with line style N electrode.Described conducting medium 9 includes silver slurry, conduction
Any one in glue or scolding tin, the preferred scolding tin of the present embodiment, the conducting particles in described conducting resinl be gold, silver, copper, gold-plated nickel,
Any one in silver-plated nickel or silver-plated copper, the preferred copper of the present embodiment；Described conducting resinl is low resistivity conductive bonded adhesives, and it is main
Composition is conducting particles and polymeric adhesive；Being shaped as of described conducting particles is spherical, appointing in sheet, olive-shaped, needle-like
One, the preferred needle-like of the present embodiment；The particle diameter of conducting particles is 0.01 μm～5 μm, the present embodiment preferably 5 μm.Described conducting resinl
In polymeric adhesive be any one in epoxy resin, polyurethane resin, acrylic resin, organic siliconresin, this enforcement
Example preferred epoxy, and heat cure or photocuring can be carried out, preparation technology is simple.
Seeing Fig. 3, the conductor wire that the present embodiment uses is the coating conductor wire with three-decker, leading including innermost layer
Diameter of wire 0.8mm, the layers of copper in intermediate layer, thickness 0.2mm, outermost layer is tin coating, thickness 0.3mm.The horizontal stroke of coating conductor wire
Sectional area is circular, diameter 1.3mm.Described electrode contact district is scolding tin；Described electric connection layer 12 be provided with P bus bar electrode and
N bus bar electrode, described P bus bar electrode and described N bus bar electrode are arranged at described electric connection layer 12 both sides；Described conflux
The surface of strip electrode has concaveconvex shape, can increase electrode contact area, reduces resistance.
The front wire electrically connected with a doped layer can be one or the conductor wire of more than two；With another doped layer electricity
Connect run through groove can be more than a row or two rows run through groove, the front that the present embodiment preferably electrically connects with P doped layer is led
Line is a conductor wire, and the groove that runs through electrically connected with N doped layer is that a row runs through groove.It is provided with secondary grid on described conductor wire, uses
In collecting electronics, described secondary grid are connected with electrode.The described backside area running through groove can be more than or equal to the front running through groove
Area, run through described in the present embodiment the backside area of groove be more than described in run through the area in groove front.On described front side conductive line
Being provided with conductive bumps, described conductive bumps electrically connects with described line style P electrode 51 or described line style N electrode 41；Described conduction
The height of bulge-structure is 250 microns～400 microns, the present embodiment preferably 300 microns, and the shape of described conductive bumps is selected from circle
Any one in cylinder, cone, parallelepiped, prism, the preferred cone of the present embodiment.Described conductive bumps profit is set
Compact siro spinning technology in electric conductivity Yu cell piece electrode.
The one that the present embodiment is provided includes from top to bottom connecting without main grid, high efficiency back contact solar cell assembly
Front layer material 11, encapsulating material 13, solar cell layer, encapsulating material 13, backsheet 10, described solar cell layer bag
Include several solar modules.Described solar module can comprise more than one cell piece, the described sun
Some cell pieces in energy battery module link with an electric connection layer 12.By electrical connection between multiple solar modules
Busbar on layer 12 connects.
A kind of without main grid, the preparation method of high efficiency back contact solar cell assembly:
Prepare electric connection layer 12: on the electric connection layer 12 have insulating materials, etch shaping run through groove；By arranged in parallel
Some conductor wires stretch and tighten, conductor wire bonding agent is bonding with the front of electric connection layer 12, at the back of the body of electric connection layer 12
Face bonding with run through the conductor wire that groove is connected；Conducting medium 9 is filled in running through groove；Successively 100 154mm length are had three
The conductor wire of the tin coating of a diameter of 1.3mm of Rotating fields stretches to tighten and is bonded according to the back side figure of back contacts solar cell
The front of described electric connection layer 12；Scolding tin is filled in running through groove；Again by the coating conductor wire of the same type of 100 298mm length
It is bonded in the back side of described electric connection layer 12 according to back contacts solar cell, and electrically connects with the described scolding tin run through in groove, pass through
Wear a length of 298mm of groove string, then by the coating conductor wire of the same type of 100 298mm length according to back contacts solar cell
Back side figure is positioned over described electric connection layer 12 front, by that analogy, ultimately forms structure as shown in Figure 5.
Connect electric connection layer 12 and cell piece: after first cell piece is welded with described electric connection layer 12, in order to make
First cell piece P doped layer and second cell piece N doped layer connect, by second back contacts solar cell at water
Plane Rotation 180 degree, makes two panels battery edge align, and these coating conductor wires are also inevitable first solar battery sheet simultaneously
Line style N electrode 41 align with the p-type contact zone of second back contacts solar cell.The most normally place the 3rd back contacts too
Positive electricity pond, makes line style N electrode 41 and the line style P electrode 51 of the 3rd back contacts solar cell of second back contacts solar cell
Alignment, by that analogy.After installing cell piece, coating conductor wire applies a small amount of external force and makes coating conductor wire and back contacts
On solar cell, contact zone is in close contact, and makes on first back contacts solar cell coating conductor wire now by infrared heating
Coating conductor wire and back contacts solar cell are welded together by alloy-layer thawing, complete the welding of back contacts solar cell.Will
Described P bus bar electrode and described N bus bar electrode are arranged at described electric connection layer 12 both sides, are prepared as solar cell mould
Block；As shown in Figure 5；
The routine of the use 5 × 0.22mm cross-sectional area of series-connected battery string as shown in Figure 5 manufacture completed is general confluxes
Bar is connected, and produces 6 strings, often string 10, the cell piece module of totally 60 back contacts.Successively according to glass, EVA, battery
The order of sheet module, EVA and backsheet 10 carries out stacking and visual examination, the module after stacking is sent into laminating machine and carries out layer
Pressure, laminating parameters is set according to the vulcanization characteristics of EVA, usually 145 DEG C of laminated 16 minutes.Finally lamination is completed
Module carries out installing metal edge frame, installing terminal box and carry out power test and visual examination.Obtain battery component.Such as Fig. 6 and
Shown in Fig. 7.
The power parameter of above-mentioned 60 back contacts assemblies is as follows:
Open-circuit voltage Uoc (V) 41.81
Short circuit current Isc (A) 9.31
Operating voltage Ump (V) 32.97
Operating current Imp (A) 9.12
Peak power Pmax (W) 300.68
Fill factor, curve factor 77.26%
Embodiment 3
Seeing Fig. 1, Fig. 3, Fig. 4, Fig. 5, the one that the present embodiment is provided is without main grid, high efficiency back contact solar cell
Module, this solar module includes cell piece and electric connection layer 12, and the shady face of described cell piece has and p-type doped layer
The P electrode connected and the N electrode being connected with n-type doping layer.It is provided with at insulating barrier between described P electrode and described N electrode
Thermoplastic resin or thermosetting resin, described resin is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, poly-ammonia
Any one in ester resin, acrylic resin, organic siliconresin, the present embodiment preferred acrylic resins, can prevent between electrode
Short circuit.
Seeing Fig. 1, described cell piece is n type single crystal silicon matrix silicon, and described P electrode is point-like P electrode 52, described N electrode
The back side of silicon substrate, point-like P electrode 52 He it is located at for point-like N electrode 42, described point-like P electrode 52 and described point-like N electrode 42
Point-like N electrode 42 is arranged alternately with each other the back side at silicon substrate, and point-like P electrode 52 is provided with positive electrode contact point, point-like N electrode
42 are provided with negative electrode contact point.Point-like P electrode 52 diameter 0.5mm, distance 1.4mm between adjacent point-like P electrode 52.Point-like
N electrode 42 diameter 0.4mm, distance 1.4mm between adjacent point-like N electrode 42, point-like P electrode 52 line and point-like N electrode 42
Centre distance between line is 1.4mm, and the setting of above-mentioned Spot electrodes design parameter is convenient in the present embodiment to be connected, can be relatively
Good collected current.Cell conversion efficiency 20.8%.
Seeing Fig. 3 and Fig. 4, described electric connection layer 12 includes that through hole, conductor wire, described conductor wire are respectively arranged at and are electrically connected
Connect the front and back of layer 12；Front side conductive line electrically connects with point-like N electrode 42, and back side conductor wire is by described through hole
Conducting medium 9 electrically connects with point-like P electrode 52.Described conducting medium 9 includes any one in silver slurry, conducting resinl or scolding tin, this
The preferred scolding tin of embodiment, the conducting particles in described conducting resinl is arbitrary in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper
Kind, the present embodiment is the most silver-colored；Described conducting resinl is low resistivity conductive bonded adhesives, and it is mainly composed of conducting particles and macromolecule
Bonding agent；Being shaped as of described conducting particles is spherical, any one in sheet, olive-shaped, needle-like, the preferred sheet of the present embodiment；
The particle diameter of conducting particles is 0.01 μm～5 μm, the present embodiment preferably 0.01 μm.Polymeric adhesive in described conducting resinl is ring
Any one in epoxy resins, polyurethane resin, acrylic resin, organic siliconresin, the present embodiment optimization polyurethane resin, and can
Carrying out heat cure or photocuring, preparation technology is simple.
Seeing Fig. 3, the conductor wire that the present embodiment uses is the coating conductor wire with double-layer structure, is copper including innermost layer
Layer, thickness 0.25mm, outermost layer is tin coating, thickness 0.025mm.The alloying component of tin layers is tin-lead 60/40, i.e. contains 60%
Tin and the lead of 40%.The cross-sectional area of coating conductor wire is circular, diameter 0.3mm.Described point-like P electrode 52 and described point-like
Total number of N electrode 42 is 1000～40000, the present embodiment preferably 24200；Described electrode contact point is scolding tin；Institute
State electric connection layer 12 to be provided with P bus bar electrode and N bus bar electrode, described P bus bar electrode and described N bus bar electrode and set
It is placed in described electric connection layer 12 both sides；The surface of described bus bar electrode has concaveconvex shape, can increase electrode contact area,
Reduce resistance.
The front wire electrically connected with a doped layer can be the conductor wire of more than two；Electrically connect with another doped layer
Through hole can be the through hole of more than two rows, and the front wire that the present embodiment preferably electrically connects with P doped layer is two conductions
Line, the through hole electrically connected with N doped layer is two row's through holes.It is provided with conducting particles on described conductor wire, is used for collecting electricity
Son, described conducting particles is connected with electrode.The backside area of described through hole can be more than or equal to the front face area of through hole,
The backside area of through hole described in the present embodiment is equal to the area in described through hole front.Described front side conductive line is provided with leads
Electricity is protruding, and described conductive bumps electrically connects with described point-like P electrode 52 or described point-like N electrode 42；Described conductive bumps is tied
The height of structure is 250 microns～400 microns, the present embodiment preferably 400 microns, the shape of described conductive bumps selected from cylinder,
Any one in cone, parallelepiped, prism, the preferred cylinder of the present embodiment.The setting of described conductive bumps is beneficial to lead
Electrically and the compact siro spinning technology of cell piece electrode.
The one that the present embodiment is provided includes from top to bottom connecting without main grid, high efficiency back contact solar cell assembly
Front layer material 11, encapsulating material 13, solar cell layer, encapsulating material 13, backsheet 10, described solar cell layer bag
Include several solar modules.Described solar module can comprise more than one cell piece, the described sun
Some cell pieces in energy battery module link with an electric connection layer 12.By electrical connection between multiple solar modules
Busbar on layer 12 connects.
A kind of without main grid, the preparation method of high efficiency back contact solar cell assembly:
Prepare electric connection layer 12: punch forming through hole on the electric connection layer 12 have insulating materials；By arranged in parallel
Some conductor wires stretch and tighten, conductor wire bonding agent is bonding with the front of electric connection layer 12, at the back of the body of electric connection layer 12
The bonding conductor wire being connected with through hole in face；Conducting medium 9 is filled in through hole；Successively 100 154mm length are had two
The conductor wire of the tin coating of a diameter of 0.3mm of Rotating fields stretches to tighten and is bonded according to the back side figure of back contacts solar cell
The front of described electric connection layer 12；Scolding tin is filled in through hole；Again by the coating conductor wire of the same type of 100 298mm length
It is bonded in the back side of described electric connection layer 12 according to back contacts solar cell, and electrically connects with the scolding tin in described through hole, pass through
The a length of 298mm of perforation string, then by the coating conductor wire of the same type of 100 298mm length according to back contacts solar cell
Back side figure is positioned over described electric connection layer 12 front, by that analogy, ultimately forms structure as shown in Figure 4.
Connect electric connection layer 12 and cell piece: after first cell piece is welded with described electric connection layer 12, in order to make
First cell piece P doped layer and second cell piece N doped layer connect, by second back contacts solar cell at water
Plane Rotation 180 degree, makes two panels battery edge align, and these coating conductor wires are also inevitable first solar battery sheet simultaneously
Point-like N electrode 42 align with the point-like P electrode 52 of second back contacts solar cell.The most normally place the 3rd back contacts
Solar cell, makes point-like N electrode 42 and the point-like P electrode of the 3rd back contacts solar cell of second back contacts solar cell
52 alignment, by that analogy.After installing cell piece, coating conductor wire applies a small amount of external force and makes coating conductor wire connect with the back of the body
Touch contact point on solar cell to be in close contact, make on first back contacts solar cell coating conductor wire now by infrared heating
Alloy-layer melt coating conductor wire and back contacts solar cell are welded together, complete the welding of back contacts solar cell.
Described P bus bar electrode and described N bus bar electrode are arranged at described electric connection layer 12 both sides, are prepared as solar cell mould
Block；As shown in Figure 5；
The routine of the use 5 × 0.22mm cross-sectional area of series-connected battery string as shown in Figure 5 manufacture completed is general confluxes
Bar is connected, and produces 6 strings, often string 10, the cell piece module of totally 60 back contacts.Successively according to glass, EVA, battery
The order of sheet module, EVA and backsheet 10 carries out stacking and visual examination, the module after stacking is sent into laminating machine and carries out layer
Pressure, laminating parameters is set according to the vulcanization characteristics of EVA, usually 145 DEG C of laminated 16 minutes.Finally lamination is completed
Module carries out installing metal edge frame, installing terminal box and carry out power test and visual examination.Obtain battery component, such as Fig. 6 and
Shown in Fig. 7,.
The power parameter of above-mentioned 60 back contacts assemblies is as follows:
Open-circuit voltage Uoc (V) 41.81
Short circuit current Isc (A) 9.31
Operating voltage Ump (V) 32.97
Operating current Imp (A) 9.12
Peak power Pmax (W) 300.68
Fill factor, curve factor 77.26%
From the experiment parameter of embodiment 1-3, the present invention back contact solar cell module prepared is constituted
Solar module can obtain the highest fill factor, curve factor, thus improves the generating efficiency of assembly.Can effectively prevent P electrode
And short circuit between N electrode, resistance to hidden split, high efficiency, high stability, there is preparation technology simultaneously simple, cost is substantially reduced
Advantage.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than the present invention is protected
Protecting the restriction of scope, although having made to explain to the present invention with reference to preferred embodiment, those of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent, without deviating from the reality of technical solution of the present invention
Matter and scope.
Claims (34)
1., without main grid, high efficiency back contact solar cell module, this solar module includes cell piece and electric connection layer,
The shady face of described cell piece has the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer, and its feature exists
In: described electric connection layer includes through hole or runs through groove, conductor wire, described conductor wire be respectively arranged at electric connection layer front and
The back side；Front side conductive line electrically connects with any one electrode, and back side conductor wire is then by described through hole or run through the conduction in groove
Medium electrically connects with another electrode, and described electric connection layer is insulating materials.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: mix with one
The conductor wire that front wire is more than two of diamicton electrical connection；The through hole that electrically connects with another doped layer or to run through groove be two
Arrange above through hole or run through groove.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: described electricity
Conductor wire on articulamentum is the shape of bending.
The most according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that to lead described in:
It is provided with secondary grid or conducting particles on electric wire, is used for collecting electronics, described secondary grid or conducting particles and back contact battery sheet
Electrode connect.
The most according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that to pass through described in:
Perforation or run through the backside area of groove more than through hole or the front face area that runs through groove, described electric connection layer is plastics.
The most according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: described just
Face conductor wire is provided with conductive bumps, and described conductive bumps electrically connects with described P electrode or described N electrode.
The most according to claim 6 without main grid, high efficiency back contact solar cell module, it is characterised in that to lead described in:
The height of electricity bulge-structure is 250 microns～400 microns.
The most according to claim 6 without main grid, high efficiency back contact solar cell module, it is characterised in that to lead described in:
Any one in cylinder, cone, parallelepiped or prism of the shape of electricity projection.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: described P electricity
Extremely point-like P electrode or line style P electrode, described N electrode is point-like N electrode or line style N electrode.
It is the most according to claim 9 without main grid, high efficiency back contact solar cell module, it is characterised in that: described point
A diameter of 0.4mm～1.5mm of shape P electrode, the distance between two adjacent point-like P electrode that same conductor wire connects is
0.7mm～10mm, the width of described line style P electrode is 0.4mm～1.5mm；A diameter of 0.4mm of described point-like N electrode～
1.5mm, the distance between two adjacent point-like N electrode that same conductor wire connects is 0.7mm～10mm, described line style N electricity
The width of pole is 0.4mm～1.5mm.
11. is according to claim 9 without main grid, high efficiency back contact solar cell module, it is characterised in that: described point
Total number of shape P electrode and described point-like N electrode is 1000～40000.
12. is according to claim 9 without main grid, high efficiency back contact solar cell module, it is characterised in that: point-like electricity
Pole or wire-type of electrode are any one in silver slurry, conducting polymer, conducting resinl or scolding tin.
13. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: with described
Distance between the adjacent conductor wire being connected with described N electrode of conductor wire that P electrode is connected is 0.1mm～20mm.
14. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that leads described in:
The material of electric wire is any one in copper, aluminium, steel, copper cover aluminum or copper covered steel；The shape of cross section of described conductor wire is circular, side
Any one in shape or ellipse；The circumscribed circle diameter of described conductor wire shape of cross section is 0.05mm～1.5mm.
15. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that leads described in:
Wire surface is coated with low melting material or is coated with conducting resinl.
16. is according to claim 15 without main grid, high efficiency back contact solar cell module, it is characterised in that: described
Low melting material is any one in tin, leypewter, sn-bi alloy or tin-lead silver alloy or appoints several combinations；Coating or lead
Electricity bondline thickness is 5 μm～50 μm.
17. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that leads described in:
The quantity of electric wire is 10～500.
18. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: described electricity
Articulamentum is provided with P bus bar electrode and N bus bar electrode, described P bus bar electrode and described N bus bar electrode and is arranged at institute
State electric connection layer both sides.
19. is according to claim 18 without main grid, high efficiency back contact solar cell module, it is characterised in that: conflux
The surface of strip electrode has concaveconvex shape.
20. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that leads described in:
Dielectric includes any one in silver slurry, conducting resinl or scolding tin or appoints several combinations, and described conducting resinl is low resistivity conductive
Bonded adhesives, it is mainly composed of conducting particles and polymeric adhesive.
21. is according to claim 20 without main grid, high efficiency back contact solar cell module, it is characterised in that: described
Conducting particles in conducting resinl is any one in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper or appoints several combinations；Institute
State conducting particles be shaped as in spherical, sheet, olive-shaped, needle-like any one or appoint several combinations；The grain of conducting particles
Footpath is 0.01 μm～5 μm.
22. is according to claim 20 without main grid, high efficiency back contact solar cell module, it is characterised in that: described
Polymeric adhesive in conducting resinl be any one in epoxy resin, polyurethane resin, acrylic resin, organic siliconresin or
Appointing several combinations, bonding agent can carry out heat cure or photocuring.
23. is according to claim 1 without main grid, high efficiency back contact solar cell module, it is characterised in that: described P
Thermoplastic resin or thermosetting resin it is provided with at insulating barrier between electrode and described N electrode.
24. is according to claim 23 without main grid, high efficiency back contact solar cell module, it is characterised in that: described
Resin is any one in vistanex, epoxy resin, polyurethane resin, organic siliconresin.
25. without main grid, high efficiency back contact solar cell assembly, including the front layer material from top to bottom connected, encapsulating material,
Solar cell layer, encapsulating material, backsheet, it is characterised in that: described solar cell layer includes several solar-electricity
Pond module, described solar module is the solar module described in any one of claim 1-24, described solar energy
Battery module is electrically connected by the busbar of electric connection layer both sides.
26. is according to claim 25 without main grid, high efficiency back contact solar cell assembly, it is characterised in that: described
The cell piece number of solar cell layer is 1～120, and wherein, including 1～120 battery module, described battery module includes 5
～120 cell pieces.
27., without main grid, the preparation method of high efficiency back contact solar cell assembly, comprise the following steps:
Step one: prepare solar module, prepares through hole having on insulating properties electric connection layer or runs through groove；Will be flat
Some conductor wires of row arrangement stretch to be tightened, conductor wire bonding agent is bonding with the front of electric connection layer, at electric connection layer
The back side is bonding with through hole or run through the conductor wire that groove is connected；At through hole or run through in groove filling conducting medium；
The front side conductive line of electric connection layer is electrically connected with P electrode or N electrode, through hole or run through conducting medium in groove with another
One doped layer electrical connection；P bus bar electrode and N bus bar electrode are arranged at described electric connection layer both sides, are prepared as solar energy
Battery module；
Step 2: prepare solar cell layer, solar module step one prepared is electrically connected by bus bar electrode,
It is prepared as solar cell layer；
Step 3: carry out layer by front layer material, encapsulating material, solar cell layer, encapsulating material, the order of backsheet successively
Folded, lamination obtains battery component.
28. is according to claim 27 without main grid, the preparation method of high efficiency back contact solar cell assembly, its feature
It is: described in step one, the P electrode on cell piece and N electrode have mirror symmetrical structure in the horizontal plane, when cell piece
When quantity is more than 1, the mode of assembled battery sheet is, after being connected with electric connection layer by first piece of cell piece, by second piece of cell piece
Revolve turnback, two panels cell piece justified margin at horizontal plane, make on the P electrode on second piece of cell piece and first piece of cell piece
N electrode on a conductor wire, the most normally place the 3rd back contact battery, make P electrode on the 3rd piece of cell piece with
The N electrode of second piece of cell piece, on a conductor wire, repeats aforesaid operations and forms cascaded structure, form solar cell layer.
29. is according to claim 27 without main grid, the preparation method of high efficiency back contact solar cell assembly, its feature
It is: described conductor wire uses plating process to be coated with low melting material, and described low melting material is scolding tin, leypewter, tin-lead
Any one in silver alloy, sn-bi alloy or tin-lead silver alloy, heated after make conductor wire pass through scolding tin with P electrode or N electrode
Fixing, make conductor wire electrically connect with cell piece.
30. is according to claim 29 without main grid, the preparation method of high efficiency back contact solar cell assembly, its feature
It is: heating fixation procedure uses heating cushion in cell piece front；The heating-up temperature of described heating cushion is 40～80 DEG C.
31. is according to claim 29 without main grid, the preparation method of high efficiency back contact solar cell assembly, its feature
Be: described mode of heating is any one in infra-red radiation, Resistant heating or Hot-blast Heating, heating-up temperature be 150～
500℃。
32. according to described in claim 27 without main grid, the preparation method of high efficiency back contact solar cell assembly, its feature exists
In: the parameter of described lamination is set according to the vulcanization characteristics of encapsulating material, and described encapsulating material is EVA, is 145 DEG C of lower floors
Press 16 minutes.
33. is according to claim 29 without main grid, the preparation method of high efficiency back contact solar cell assembly, its feature
It is: described plating process is any one in hot-dip, plating or chemical plating.
34. is arbitrary described without main grid, the preparation side of high efficiency back contact solar cell assembly according to claim 27-33
Method, it is characterised in that: described through hole or run through groove by punch forming or by laser beam etching shaping.
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| CN104576778B (en) * | 2015-01-05 | 2017-08-08 | 苏州中来光伏新材股份有限公司 | Without main grid high efficiency back contact solar cell, component and its preparation technology |
| CN108039384B (en) * | 2017-12-21 | 2019-12-13 | 泉州台商投资区镕逸科技有限公司 | Solar power generation device |
| CN107958943A (en) * | 2017-12-26 | 2018-04-24 | 南京日托光伏科技股份有限公司 | A kind of photovoltaic module and production method based on IBC cell packages |
| CN108229007B (en) * | 2017-12-29 | 2021-06-22 | 苏州阿特斯阳光电力科技有限公司 | Multi-main-grid photovoltaic module simulation method and photovoltaic module |
| CN109300405A (en) * | 2018-11-30 | 2019-02-01 | 云谷（固安）科技有限公司 | A kind of display panel and device |
| CN109449236A (en) * | 2018-12-29 | 2019-03-08 | 陕西众森电能科技有限公司 | A kind of interconnection mode between heterojunction solar battery |
| CN110246911A (en) * | 2019-05-30 | 2019-09-17 | 泰州隆基乐叶光伏科技有限公司 | Back contacts lamination solar battery string and manufacturing method, lamination solar module |
| CN110190145A (en) * | 2019-05-30 | 2019-08-30 | 泰州隆基乐叶光伏科技有限公司 | Back contacts lamination solar battery string and manufacturing method, lamination solar module |
| CN110707167B (en) * | 2019-08-29 | 2021-10-15 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
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