CN104244603A

CN104244603A - A manufacturing method for a part built-in type wiring substrate and a semiconductor device

Info

Publication number: CN104244603A
Application number: CN201410266044.9A
Authority: CN
Inventors: 奈良桥弘久; 中村茂雄; 真子玄迅
Original assignee: Ajinomoto Co Inc
Current assignee: Ajinomoto Co Inc
Priority date: 2013-06-17
Filing date: 2014-06-16
Publication date: 2014-12-24
Anticipated expiration: 2034-06-16
Also published as: CN104244603B; TWI634826B; TW201511634A; KR102179621B1; KR20140146542A

Abstract

The invention relates to a manufacturing method for a part built-in type wiring substrate. The manufacturing method for the part built-in type wiring substrate comprise the above working procedures which are (A), (B), (C) and (D): (A) a first adhesive membrane is laminated in a vacuum way on an inner layer substrate in a mode that a first thermocuring-type resin composition is joint with a first main surface of the inner layer substrate; (B) a part is temporarily assembled on the first thermocuring-type resin composition in a cavity; (C) a second adhesive membrane is laminated in a vacuum way on an inner layer substrate in a mode that a second thermocuring-type resin composition is joint with a second main surface of the inner layer substrate; vacuum laminating is carried out in a condition that a heating temperature on the surface of the first adhesive membrane is lower than a heating temperature on the second adhesive membrane; and (D) the first thermocuring-type resin composition and the second thermocuring-type resin composition are cured to form an insulating layer.

Description

The manufacture method of parts internally-arranged type circuit board and semiconductor device

Technical field

The present invention relates to manufacture method and the semiconductor device of parts internally-arranged type circuit board.

Background technology

In recent years, the demand of the small-sized high function electronic equipment that smart phone, flat board (tablet) PC are so increases.Therewith concomitantly, further multifunction, the miniaturization of the printed wiring board used in so small-sized high function electronic equipment is required.

In printed wiring board, the parts such as bare chip (bare chip), shaped like chips capacitor, shaped like chips inductor are installed.In the past, such parts were only arranged on the surface circuit of printed wiring board, but its installation is limited, were difficult to tackle the further multifunction of printed wiring board in recent years, miniaturized requirement.

In order to tackle such problem, increasing as the lift-launch amount of parts can be made and seeking miniaturized printed wiring board, proposing parts internally-arranged type circuit board (patent documentation 1).

Prior art document

Patent documentation

Patent documentation 1: JP 2011-216636 publication.

Summary of the invention

The problem that invention will solve

Parts internally-arranged type circuit board such as can use the internal substrate in the chamber (cavity) be formed for accommodating parts (i) to manufacture to order (v) according to following.In addition, when manufacture component internally-arranged type circuit board, the general circuit substrate that uses is as internal substrate.(i) be formed with the interarea of folk prescription of internal substrate in chamber, the stacked interim fabricated material for interim build-up member.(ii) parts are assemblied in temporarily the adhesive surface of the interim fabricated material exposed via chamber.(iii) in chamber, be equipped with the interarea of the opposing party of the internal substrate of parts temporarily, hot curing resin composition layer is set, make its hot curing and form insulating barrier.(iv), after the interim fabricated material of stripping, hot curing resin composition layer is set at the interarea of the folk prescription of the internal substrate exposed, makes its hot curing and form insulating barrier.After this, conductor layer (wiring) is (v) set.

Realize the further miniaturization of electronic equipment, lightweight, require the miniaturization of parts internally-arranged type circuit board self, slimming.But, the present inventor finds, in the miniaturization in order to reach parts internally-arranged type circuit board self, slimming and under using the situations such as internal substrate that chamber density is high, internal substrate that thickness is thin, the stage (above-mentioned (iii) after) of insulating barrier is formed at the interarea of the folk prescription of internal substrate, the curling phenomenon of internal substrate is produced (hereinafter also referred to as " substrate warp " for inner circumferential side sometimes with the face being provided with insulating barrier.）。When producing substrate warp, obstacle can be brought to substrate transmission, causing the reduction manufacturing efficiency (rate of finished products).

In addition, the miniaturization of built-in parts, the small wiring of circuit also in development, also become more and more higher to the requirement of the configuration precision of the parts in the chamber of internal substrate.

Problem of the present invention is, provides a kind of and can suppress substrate warp and can suppress the change in location of the parts in chamber (skew) and realize the manufacture method of the parts internally-arranged type circuit board of the outstanding configuration precision of parts.

For solving the scheme of problem

The present inventor studies intensively above-mentioned problem, found that, solving above-mentioned problem, finally completing the present invention by utilizing following specific method to carry out manufacture component internally-arranged type circuit board.

That is, the present invention includes following content.

[1] manufacture method for parts internally-arranged type circuit board, comprises following operation (A), (B), (C) and (D) in order:

(A) in the mode making the 1st hot curing resin composition layer engage with the 1st interarea of internal substrate, by the vacuum laminated operation at internal substrate of the 1st adhesive film, wherein, described internal substrate has the 1st and the 2nd interarea, be formed with the chamber between the through 1st and the 2nd interarea, the 1st hot curing resin composition layer that described 1st adhesive film comprises the 1st supporting mass and engages with the 1st supporting mass;

(B) parts are assemblied in temporarily the operation of the 1st hot curing resin composition layer in chamber;

(C) in the mode making the 2nd hot curing resin composition layer engage with the 2nd interarea of internal substrate, by the operation of vacuum laminated for the 2nd adhesive film the 2nd interarea at internal substrate, carry out vacuum laminated under the condition that heating-up temperature on the 1st adhesive film surface is lower than the heating-up temperature on the 2nd adhesive film surface, wherein, described 2nd adhesive film the 2nd hot curing resin composition layer that comprises the 2nd supporting mass and engage with the 2nd supporting mass;

(D) make the 1st and the 2nd hot curing resin composition layer hot curing and form the operation of insulating barrier.

[2] method Gen Ju [1], wherein, internal substrate is circuit substrate (hereinafter also referred to as " method of the 1st execution mode ").

[3] method Gen Ju [1], wherein, internal substrate is insulated substrate (hereinafter also referred to as " method of the 2nd execution mode ").

[4] method Gen Ju [3], wherein, insulated substrate is solidification prepreg (prepreg), glass substrate or ceramic substrate.

[5] according to the method described in any one of [1] ~ [4], wherein, in operation (C), the heating-up temperature on the 1st adhesive film surface is being set to T ₁the heating-up temperature on (DEG C), the 2nd adhesive film surface is set to T ₂time (DEG C), T ₁and T ₂meet T ₂-40≤T ₁≤ T ₂the relation of-10.

[6] according to the method described in any one of [1] ~ [5], wherein, the 2nd hot curing resin composition layer is than the 1st hot curing resin composition thickness.

[7] according to the method described in any one of [1] ~ [6], wherein, in operation (A), the height h in the chamber of the internal substrate before vacuum laminated 1st adhesive film _awith the height h of the non-resin fill area in the chamber of the internal substrate after vacuum laminated 1st adhesive film _bmeet 0.8h _a≤ h _b≤ h _arelation.

[8] according to the method described in any one of [1] ~ [7], wherein, in operation (C), the melt viscosity of the 1st hot curing resin composition layer is more than 2000 pools.

[9] according to the method described in any one of [1] ~ [8], wherein, between operation (C) and operation (D), the operation being made the face of the 1st adhesive film side and the face smoothing of the 2nd adhesive film side by heating and mould pressing is comprised.

[10] according to the method described in any one of [1] ~ [9], wherein, in operation (D), under with the state of the 1st and the 2nd supporting mass, hot curing is carried out.

[11] according to the method described in any one of [2], [5] ~ [10], wherein, the thickness of circuit substrate is 50 ~ 350 μm.

[12] according to the method described in any one of [3] ~ [10], wherein, the thickness of insulated substrate is 30 ~ 350 μm.

[13] according to the method described in any one of [1] ~ [12], wherein, the spacing between chamber is 1 ~ 10mm.

[14] according to the method described in any one of [1] ~ [13], wherein, the amount of the inorganic filling material in the 1st hot curing resin composition layer is more than 50 quality %.

[15] according to the method described in any one of [1] ~ [14], wherein, the warpage of the substrate obtained in operation (B) is below 25mm.

[16] according to the method described in any one of [1] ~ [15], the operation that (E) carries out perforate wherein, is also comprised.

[17] according to the method described in any one of [1] ~ [16], the operation that (F) forms conductor layer on the insulating layer wherein, is also comprised.

[18] method Gen Ju [17], wherein, operation (F) comprises carries out roughening treatment and the insulating barrier after alligatoring form conductor layer by plating to insulating barrier.

[19] a parts internally-arranged type insulated substrate, comprising: insulated substrate, has the 1st and the 2nd interarea, is formed with the chamber between the through 1st and the 2nd interarea; 1st insulating barrier, engages with the 1st interarea of insulated substrate; 2nd insulating barrier, engages with the 2nd interarea of insulated substrate; And parts, be arranged on the 1st insulating barrier in the mode of the inside being housed in the chamber of insulated substrate, wherein, the 2nd insulating barrier fills the chamber of insulated substrate in the mode imbedded by parts.

[20] a parts internally-arranged type two-layer wiring substrate, comprising: the 1st and the 2nd conductor layer; Parts internally-arranged type insulated substrate according to [19], engages with the 1st and the 2nd conductor layer, is arranged between the 1st and the 2nd conductor layer; And interlayer connector, the 1st and the 2nd conductor layer is electrically connected.

[21] the parts internally-arranged type two-layer wiring substrate Gen Ju [20], wherein, the 1st and the 2nd conductor layer is formed by plating.

[22] semiconductor device, the parts internally-arranged type circuit board that the method described in any one comprising use [1] ~ [18] manufactures.

Invention effect

According to the present invention, can provide a kind of and can suppress substrate warp and the change in location of the parts in chamber (skew) can be suppressed and realize the manufacture method of the parts internally-arranged type circuit board of the configuration precision of outstanding parts.

Accompanying drawing explanation

Figure 1A illustrates the schematic diagram (1) being formed with an order of the circuit substrate in chamber preparing to use in the method for the 1st execution mode of the present invention.

Figure 1B illustrates the schematic diagram (2) being formed with an order of the circuit substrate in chamber preparing to use in the method for the 1st execution mode of the present invention.

Fig. 2 A illustrates the schematic diagram (1) being formed with an order of the insulated substrate in chamber preparing to use in the method for the 2nd execution mode of the present invention.

Fig. 2 B illustrates the schematic diagram (2) being formed with an order of the insulated substrate in chamber preparing to use in the method for the 2nd execution mode of the present invention.

Fig. 3 is the schematic diagram of the form that the 1st adhesive film used in the manufacture method of parts internally-arranged type circuit board of the present invention is shown.

Fig. 4 A is the schematic diagram (1) of the method for illustration of the 1st execution mode of the present invention.

Fig. 4 B is the schematic diagram (2) of the method for illustration of the 1st execution mode of the present invention.

Fig. 4 C is the schematic diagram (3) of the method for illustration of the 1st execution mode of the present invention.

Fig. 4 D is the schematic diagram (4) of the method for illustration of the 1st execution mode of the present invention.

Fig. 4 E is the schematic diagram (5) of the method for illustration of the 1st execution mode of the present invention.

Fig. 4 F is the schematic diagram (6) of the method for illustration of the 1st execution mode of the present invention.

Fig. 4 G is the schematic diagram (7) of the method for illustration of the 1st execution mode of the present invention.

Fig. 5 A is the schematic diagram (1) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 5 B is the schematic diagram (2) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 5 C is the schematic diagram (3) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 5 D is the schematic diagram (4) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 5 E is the schematic diagram (5) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 5 F is the schematic diagram (6) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 5 G is the schematic diagram (7) of the method for illustration of the 2nd execution mode of the present invention.

Fig. 6 is the schematic diagram of the evaluation method for illustration of substrate warp.

Embodiment

[manufacture method of parts internally-arranged type circuit board]

The manufacture method of parts internally-arranged type circuit board of the present invention comprises following operation (A), (B), (C) and (D) in order.

In addition, in the present invention, about to operation (A) to (D) said " comprising in order ", as long as each operation of each operation and operation (A) to (D) that comprise operation (A) to (D) is implemented in this order, just do not hinder and comprise other operation.

Below, about to operation or process said " comprising in order ", be also same.

When manufacture component internally-arranged type circuit board, as internal substrate, in general use circuit substrate.Thus, in the method for the 1st execution mode of the present invention, internal substrate is that circuit substrate is (for " circuit substrate " by aftermentioned.）。Below, also the parts internally-arranged type circuit board obtained by the method for the 1st execution mode is called " parts internally-arranged type circuit board ".

In addition, the present invention also can be applied to the execution mode using insulated substrate as internal substrate.Thus, in the method for the 2nd execution mode of the present invention, internal substrate is that insulated substrate is (for " insulated substrate " by aftermentioned.）。Below, also the parts internally-arranged type circuit board obtained by the method for the 2nd execution mode is called " parts internally-arranged type substrate ".

Before the method for the 1st execution mode of the present invention and the 2nd execution mode is described in detail, " being formed with the circuit substrate in chamber ", " being formed with the insulated substrate in chamber " and " adhesive film " used in the method for the invention is described.

< is formed with the circuit substrate > in chamber

The circuit substrate being formed with chamber used in the method for the 1st execution mode of the present invention is the circuit substrate having the 1st and the 2nd interarea, be formed with the chamber between the through 1st and the 2nd interarea.

Be formed chamber circuit substrate can when manufacture component internally-arranged type circuit board according to before well-known arbitrary order prepare.Below, with reference to Figure 1A and Figure 1B, the example preparing to be formed with the order of the circuit substrate in chamber is described.

First, circuit substrate (Figure 1A) is prepared.In the present invention, so-called " circuit substrate ", what say is the substrate having the 1st and the 2nd interarea in opposite directions, have the tabular of the wiring carrying out pattern processing at the folk prescription of the 1st and the 2nd interarea or both sides.In figure ia, schematically show the end face of circuit substrate 11, circuit substrate 11 comprises the wiring 13 such as substrate 12 and guide hole (via) wiring, surface wiring.In the following description, conveniently, make the 1st interarea of circuit substrate represent the downside interarea of illustrated circuit substrate, make the 2nd interarea of circuit substrate represent the upside interarea of illustrated circuit substrate.

As the substrate 12 used in circuit substrate 11, such as can enumerate epoxy glass substrate, metal substrate, polyester (polyester) substrate, polyimides (polyimide) substrate, BT resin substrate, thermohardening type polyphenylene oxide (Polyphenyleneether) substrate etc., preferably epoxy glass substrate.In addition, when manufacturing printed wiring board, said in the present invention " circuit substrate " also comprises the middle internal layer circuit substrate manufacturing thing that should form insulating barrier and/or conductor layer.

About the thickness of the substrate 12 of circuit substrate 11, according to the viewpoint of the slimming of parts internally-arranged type circuit board, thin is more suitable, preferably less than 400 μm, be more preferably less than 350 μm, being more preferably less than 300 μm, being more preferably less than 250 μm, is particularly preferably less than 200 μm, less than 180 μm, less than 170 μm, less than 160 μm or less than 150 μm.According to method of the present invention, even if when use possesses the circuit substrate of so thin substrate, the generation of substrate warp also can be suppressed.Although the lower limit of the thickness of substrate 12 is not particularly limited, according to the viewpoint of the disposal improved when transmitting, preferably more than 20 μm, be more preferably more than 40 μm, more than 50 μm, more than 60 μm, more than 70 μm or more than 80 μm.

About the thermal coefficient of expansion of substrate 12, according to suppressing circuit modifications, producing the viewpoint in crack (crack), preferably less than 15ppm/ DEG C, be more preferably less than 13ppm/ DEG C, be preferably less than 11ppm/ DEG C further.Although the lower limit of the thermal coefficient of expansion of substrate 12 also depends on the composition of the resin combination used in the formation of insulating barrier, preferably more than-2ppm/ DEG C, be more preferably more than 0ppm/ DEG C, be preferably more than 4ppm/ DEG C further.In the present invention, the thermal coefficient of expansion of substrate 12 obtain by carrying out thermo-mechanical analysis (TMA) by tensile load method, coefficient of linear thermal expansion at 25 ~ 150 DEG C of in-plane.As the thermo-mechanical analysis device that can use in the measurement of the coefficient of linear thermal expansion of substrate 12, such as, (strain) Rigaku system " Thermo Plus TMA8310 ", SeikoInstruments(strain can be enumerated) system " TMA-SS6100 ".

About the glass transition temperature (Tg) of substrate 12, according to the viewpoint of the mechanical strength of parts internally-arranged type circuit board, preferably more than 170 DEG C, be more preferably more than 180 DEG C.Although the upper limit of the Tg of substrate 12 is not particularly limited, be generally less than 300 DEG C.The Tg of substrate 12 is by carrying out thermo-mechanical analysis to measure by tensile load method.As thermo-mechanical analysis device, thermo-mechanical analysis device same as described above can be used.

The size of the wiring 13 that circuit substrate 11 possesses can decide according to required characteristic.Such as, about the thickness of surface wiring, according to the viewpoint of the slimming of parts internally-arranged type circuit board, preferably less than 40 μm, be more preferably less than 35 μm, be more preferably less than 30 μm, being more preferably less than 25 μm, is particularly preferably less than 20 μm, less than 19 μm or less than 18 μm.Although the lower limit of the thickness of surface wiring is not particularly limited, normally more than 1 μm, more than 3 μm, 5 μm with first-class.

Next, circuit substrate is arranged the chamber (Figure 1B) for accommodating parts.As schematically shown in fig. ib, can chamber 12a between the 1st and the 2nd interarea that the position of the regulation of substrate 12 arranges through circuit substrate.Thus, the circuit substrate 11 ' being formed with chamber can be obtained.Consider the characteristic of substrate 12, chamber 12a is such as by using the well-known method of drill bit (drill), laser, plasma, etching media etc. to be formed.

Although illustrate only 1 chamber 12a in fig. ib, also can mutually open the interval of regulation and be provided with multiple chamber 12a by sky.About the spacing between the 12a of chamber, according to the viewpoint of the miniaturization of parts internally-arranged type circuit board, short is suitable.Although the spacing between the 12a of chamber also depends on the opening size of chamber 12a self, preferably below 10mm, being more preferably below 9mm, being more preferably below 8mm, be more preferably below 7mm, is particularly preferably below 6mm.According to method of the present invention, even if when arranging chamber with so short spacing, the generation of substrate warp also can be suppressed.Although the lower limit of the spacing between the 12a of chamber also depends on the opening size of chamber 12a self, normally more than 1mm, 2mm are with first-class.Each spacing between the 12a of chamber need not be identical throughout circuit substrate, also can be different.

The opening shape of chamber 12a is not particularly limited, and can become the arbitrary shape such as rectangle, circle, substantially rectangular, circular.In addition, although the opening size of chamber 12a also depends on the design of wiring, such as, when the opening shape of chamber 12a is rectangle, preferably 5mm × below 5mm, is more preferably 3mm × below 3mm.Although the lower limit of this opening size also depends on the size of accommodated parts, normally 0.5mm × 0.5mm.The opening shape of chamber 12a need not be identical throughout circuit substrate with opening size, also can be different.

Above, although be illustrated the example preparing to be formed with the order of the circuit substrate in chamber with reference to Figure 1A and Figure 1B, as long as the circuit substrate being formed with chamber can be obtained, be just not limited to above-mentioned order.Such as, also wiring can be set after substrate forms chamber.The circuit substrate being formed with chamber prepared by such variation is used to carry out the form of manufacture component internally-arranged type circuit board also within the scope of the invention.

< is formed with the insulated substrate > in chamber

The insulated substrate being formed with chamber used in the method for the 2nd execution mode of the present invention is the insulated substrate having the 1st and the 2nd interarea, be formed with the chamber between the through 1st and the 2nd interarea.

The insulated substrate being formed with chamber can prepare according to arbitrary order.Below, the example preparing to be formed with the order of the insulated substrate in chamber is described with reference to Fig. 2 A and Fig. 2 B.

First, insulated substrate (Fig. 2 A) is prepared.In the present invention, so-called " insulated substrate ", what say is the substrate having the 1st and the 2nd interarea in opposite directions, the tabular of electrical insulating property is shown.In the following description, conveniently, make the 1st interarea of insulated substrate represent the downside interarea of illustrated insulated substrate, make the 2nd interarea of insulated substrate represent the upside interarea of illustrated insulated substrate.

About insulated substrate 21, be not particularly limited, can be apply with the conductive board that insulating material is such to metal substrate and impart the substrate of insulating properties, but, according to the viewpoint of the compacting viewpoint of substrate warp, the insulating reliability of parts internally-arranged type substrate, preferably solidify prepreg, glass substrate or ceramic substrate, be more preferably solidification prepreg.

So-called solidification prepreg, what say is the solidfied material of prepreg.Prepreg is the flaky material comprising hot curing resin composition and sheet-like fiber base material, such as, hot curing resin composition can be made to be immersed in sheet-like fiber base material and to be formed.About the hot curing resin composition used in prepreg, as long as this solidfied material has sufficient hardness and insulating properties is just not particularly limited, the past used in the formation of the insulating barrier of printed wiring board well-known hot curing resin composition can be used in.Or the hot curing resin composition used in prepreg also can be the composition identical with the hot curing resin composition used in adhesive film described later.The sheet-like fiber base material used in prepreg is not particularly limited, can be used as prepreg base material the base material commonly used.According to the viewpoint that the thermal coefficient of expansion of solidification prepreg can be made to reduce, as sheet-like fiber base material, preferred glass fibers base material, organic fiber base material are (such as, aromatic polyamide (aramid) fiber base material), more preferably fiberglass substrate, more preferably glass fabric (glass cloth).As the glass fibre used in fiberglass substrate, according to the viewpoint that thermal coefficient of expansion can be made to reduce, preferably from the glass fibre of more than a kind of the group selection be made up of E glass fibre, S glass fibre, T glass fibre and Q glass fibre, more preferably S glass fibre, Q glass fibre, more preferably Q glass fibre.So-called Q glass fibre, what say is the glass fibre that the containing ratio of silicon dioxide accounts for more than 90 quality %.About the thickness of sheet-like fiber base material, according to the viewpoint of the slimming of solidification prepreg, preferably less than 200 μm, being more preferably less than 100 μm, being more preferably less than 80 μm, be more preferably less than 50 μm, is particularly preferably less than 40 μm.According to the viewpoint obtaining the solidification prepreg with sufficient rigidity, the lower limit of the thickness of preferred sheet-like fiber base material is more than 1 μm, is more preferably more than 10 μm, is more preferably more than 15 μm.

About the thickness of insulated substrate 21, according to the viewpoint of the slimming of parts internally-arranged type substrate, thin is more suitable, preferably less than 400 μm, be more preferably less than 350 μm, being more preferably less than 300 μm, being more preferably less than 250 μm, is particularly preferably less than 200 μm, less than 180 μm, less than 170 μm, less than 160 μm or less than 150 μm.According to method of the present invention, even if when using so thin insulated substrate, the generation of substrate warp also can be suppressed.Although the lower limit of the thickness of insulated substrate 21 is not particularly limited, according to the viewpoint of the disposal improved when transmitting, preferably more than 30 μm, be more preferably more than 40 μm, be more preferably more than 50 μm, be more preferably more than 60 μm, more than 70 μm or more than 80 μm.

Thermal coefficient of expansion and the glass transition temperature Tg of insulated substrate 21 can be set to identical with glass transition temperature with the thermal coefficient of expansion of aforesaid substrate 11.

Next, insulated substrate is arranged the chamber (Fig. 2 B) for accommodating parts.As schematically shown in fig. 2b, can chamber 21a between the 1st and the 2nd interarea that the position of the regulation of insulated substrate 21 arranges through insulated substrate.About chamber 21a, considering the characteristic of insulated substrate 21, such as, being formed by using the well-known method of drill bit, laser, plasma, etching media etc.

Although illustrate only 1 chamber 21a in fig. 2b, also can be separated from each other the interval of regulation and be provided with multiple chamber 21a.About the spacing between the 21a of chamber, according to the viewpoint of the miniaturization of parts internally-arranged type substrate, short is suitable.Spacing between the 21a of chamber can be established identical with the spacing between above-mentioned chamber 12a.Each spacing between the 21a of chamber there is no need throughout insulated substrate identical, also can be different.

Opening shape and the opening size of chamber 21a can be set to identical with opening size with the opening shape of above-mentioned chamber 12a.The opening shape of chamber 21a there is no need throughout insulated substrate identical with opening size, also can be different.

According to above order, the insulated substrate 1 ' being formed with chamber can be prepared.

< adhesive film >

In the method for the invention, the 1st adhesive film and the 2nd adhesive film is used.

(the 1st adhesive film)

Schematically show the end face of the 1st adhesive film in figure 3.The 1st hot curing resin composition layer 102 that 1st adhesive film 100 comprises the 1st supporting mass 101 and engages with the 1st supporting mass.

As the 1st supporting mass, such as, can enumerate the film, metal forming, the release liners that are made up of plastic material, the film, the metal forming that are preferably made up of plastic material.

When the film that use is made up of plastic material is as the 1st supporting mass, as plastic material, such as, (polyethylene terephthalate, below, sometimes referred to as " PET " can to enumerate PETG.), (polyethylene naphthalate, below, sometimes referred to as " PEN " for PEN.) etc. polyester, Merlon (polycarbonate, below, sometimes referred to as " PC ".), polymethyl methacrylate (polymethylmethacrylate, acrylate, cyclic polyolefin (polyolefin), the Triafol T (triacetylcellulose such as PMMA), TAC), polyether sulfides (polyether sulfide, PES), polyether-ketone (polyether ketone), polyimides etc.Wherein, more preferably PETG, PEN, particularly preferably cheap PETG.

When using metal forming as the 1st supporting mass, as metal forming, such as, Copper Foil, aluminium foil etc. can be enumerated, preferred Copper Foil.As Copper Foil, the paper tinsel be made up of the elemental metals of copper can be used, also can use the paper tinsel be made up of the alloy of copper and other metal (such as, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium etc.).

About the 1st supporting mass, matte management (matte process), corona treatment (corona process) can be implemented in the face engaged with the 1st hot curing resin composition layer described later.

In addition, as the 1st supporting mass, the subsidiary release stratotype supporting mass that the mask engaged with the 1st hot curing resin composition layer described later has release layer can be also used in.As the mould release used in the release layer of subsidiary release stratotype supporting mass, such as, the mould release of more than a kind from the group selection be made up of alkyd resins (alkyd resin), vistanex, polyurethane resin and silicone resin can be enumerated.Subsidiary release stratotype supporting mass can use the commodity of commercial type, such as, can enumerate as have using alkyd resins system mould release as the release layer of principal component PET film, LINTEC(strain) " SK-1 ", " AL-5 ", " AL-7 " etc. that make.

Although the thickness of the 1st supporting mass is not particularly limited, preferably the scope of 5 μm ~ 75 μm, is more preferably the scope of 10 μm ~ 60 μm.In addition, when using subsidiary release stratotype supporting mass, preferably the thickness of subsidiary release stratotype supporting mass entirety is above-mentioned scope.

As described later, the 1st supporting mass also can contain laser light absorbing material.As laser light absorbing material, such as, metallic compound powder, carbon dust, metal powder, black dyes etc. can be enumerated.When containing laser light absorbing material, the amount of the laser light absorbing material preferably in the 1st supporting mass is 0.05 ~ 40 quality %, is more preferably 0.1 ~ 20 quality %.

Reduce according to the coefficient of thermal expansion of the insulating barrier making to obtain and prevent from being caused by the difference of the thermal expansion of insulating barrier and conductor layer generation slight crack, circuit modifications viewpoint and prevent the excessive reduction of melt viscosity and viewpoint that the position of suppression component offsets, the resin combination preferably used in the 1st hot curing resin composition layer comprises inorganic filling material.

The viewpoint of the position skew of the viewpoint reduced according to the coefficient of thermal expansion of the insulating barrier making to obtain and the excessive reduction that prevents melt viscosity and suppression component, the amount of the inorganic filling material in preferred resin composition is more than 30 quality %, be more preferably more than 40 quality %, be more preferably more than 50 quality %, be more preferably more than 60 quality %, be particularly preferably more than more than 62 quality %, more than 64 quality % or 66 quality %.Particularly, according to the viewpoint that the position of suppression component offsets, the amount of the inorganic filling material in preferred resin composition is more than 50 quality %.According to the viewpoint of the mechanical strength of the insulating barrier obtained, the upper limit of the amount of the inorganic filling material in preferred resin composition is below 90 quality %, is more preferably below 85 quality %.

In addition, in the present invention, the amount of each composition in resin combination be the nonvolatile component of establishing in resin combination add up to 100 quality % time value.

As inorganic filling material, such as, silicon dioxide (silica), aluminium oxide (alumina), glass, cordierite (cordierite), Si oxide, barium sulfate, talcum, clay (clay), mica powder, aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminium nitride, nitrogenized manganese, aluminium borate, barium titanate, strontium titanates, calcium titanate, magnesium titanate, bismuth titanates, titanium oxide, barium zirconate, calcium zirconate, basic zirconium phosphate and phosphoric acid tungsten wire array etc. can be enumerated.Among them, especially the silicon dioxide such as amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica particularly preferably.In addition, as silicon dioxide, preferred spherical silicon dioxide.Inorganic filling material can be used alone a kind, also can be used in combination of two or more.As the spheroidal fused silicon dioxide that market is sold, such as, (strain) ADMATECHS system " SOC2 ", " SOC1 " can be enumerated.

About the average grain diameter of inorganic filling material, preferably the scope of 0.01 μm ~ 4 μm, is more preferably the scope of 0.05 μm ~ 2 μm, is more preferably the scope of 0.1 μm ~ 1 μm, be more preferably the scope of 0.3 μm ~ 0.8 μm.The average grain diameter of inorganic filling material is measured by the laser diffraction and scattering method based on MieShi scattering theory.Specifically, laser diffraction and scattering formula particle size distribution measurement device can be utilized to make the particle size distribution of inorganic filling material with volume reference, using its median diameter (median diameter) as average grain diameter, thus, measure.About measurement sample, can preferably use the sample utilizing ultrasonic wave that inorganic filling material is dispersed in water.As laser diffraction and scattering formula particle size distribution measurement device, (strain) field that rises abruptly can be used to make made " LA-500 " etc.

About inorganic filling material, according to improving moisture-proof and dispersed viewpoint, the surface conditioning agent that amino silane (amino silane) is coupling agent, epoxy silane (epoxy silane) is coupling agent, hydrosulphonyl silane (mercapto silane) is coupling agent, silane series coupling agent, organosilazanes (organo-silazane) compound, titanate (titanate) are more than a kind of coupling agent etc. is preferably used to process.As the market merchandising of surface conditioning agent, such as, SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM403 " (3-(2 can be enumerated, 3-epoxy third oxygen) propyl trimethoxy silicane (3-Glycidoxypropyltrimethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM803 " (3-mercaptopropyi trimethoxy silane (3-Mercaptopropyltrimethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBE903 " (APTES (3-aminopropyltriethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 " (N-phenol-3-TSL 8330 (N-phenol-3-aminopropyltrimethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " SZ-31 " (hexamethyldisiloxane (hexamethyldisilazane)) etc.

About the surface-treated degree utilizing surface conditioning agent to carry out, the average carbon amounts of the per surface area by inorganic filling material is evaluated.About the carbon amounts that the per surface area of inorganic filling material is average, according to the viewpoint of the dispersiveness of raising inorganic filling material, preferably more than 0.02mg/ ㎡, is more preferably more than 0.1mg/ ㎡, is more preferably more than 0.2mg/ ㎡.On the other hand, according to the viewpoint of the rising of the melt viscosity prevented under the melt viscosity of resin varnish (varnish) or film morphology, be preferably below 1mg/ ㎡, be more preferably below 0.8mg/ ㎡, be more preferably below 0.5mg/ ㎡.

The carbon amounts that the per surface area of inorganic filling material is average can be measured after carrying out clean with the inorganic filling material after solvent (such as, methyl ethyl ketone (methyl ethyl ketone, MEK)) effects on surface process.Specifically, the MEK measured fully joined as solvent the inorganic filling material carrying out after surface treatment with surface conditioning agent, at 25 DEG C, carry out 5 minutes Ultrasonic Cleanings.Removing upper clear liquid, make solid state component drying after, carbon analysis meter can be used to the average carbon amounts of the per surface area measuring inorganic filling material.As carbon analysis meter, (strain) hole field can be used to make made " EMIA-320V " etc.

As the heat-curing resin used in the 1st hot curing resin composition layer, the in the past well-known heat-curing resin used during the insulating barrier forming printed wiring board can be used, wherein, particularly preferably epoxy resin.In one embodiment, the resin combination used in the 1st hot curing resin composition layer comprises inorganic filling material and epoxy resin.In addition, as required, resin combination also can comprise curing agent.In one embodiment, inorganic filling material, epoxy resin and curing agent is comprised at the resin combination of the 1st hot curing resin composition layer.Resin combination for using in the 1st hot curing resin composition layer also can also comprise the additives such as thermoplastic resin, curing accelerator, fire retardant and rubber particles.

Below, to being described as the epoxy resin of the materials'use of resin combination, curing agent and additive.

-epoxy resin-

As epoxy resin, such as, bis-phenol (bisphenol) A type epoxy resin can be enumerated, bisphenol f type epoxy resin, bisphenol-s epoxy resin, bisphenol AF type epoxy resin, bicyclopentadiene (dicyclopentadiene) type epoxy resin, trisphenol (trisphenol) type epoxy resin, naphthol novolac (naphthol novolac) type epoxy resin, phenol novolak type epoxy, tert-butyl (butyl)-benzene phosphorus diphenol (catechol) type epoxy resin, naphthalene (naphthalene) type epoxy resin, naphthols (naphthol) type epoxy resin, anthracene (anthracene) type epoxy resin, glycidyl amine (glycidyl amine) type epoxy resin, ethylene oxidic ester (glycidyl ester) type epoxy resin, cresol-novolak (cresol novolac) type epoxy resin, biphenyl (biphenol) type epoxy resin, wire aliphatic epoxy resin, there is the epoxy resin of butadiene (butadiene) structure, alicyclic epoxy resin, hetero ring type epoxy resin, containing volution epoxy resin, cyclohexanedimethanol (cyclohexanedimethanol) type epoxy resin, naphthol ethyl ether (naphthylene ether) type epoxy resin and trihydroxy methyl type epoxy resin etc.Epoxy resin can be used alone a kind, or, also can be used together two or more.

Preferred epoxy is included in the epoxy resin in 1 molecule with the epoxy radicals of more than 2.When the nonvolatile component of epoxy resin is set to 100 quality %, preferably more than at least 50 quality % are the epoxy resin of the epoxy radicals in 1 molecule with more than 2.Wherein, be especially preferably included in 1 molecule there are more than 2 epoxy radicals, be that aqueous epoxy resin is (hereinafter referred to as " liquid epoxy resin " temperature 20 DEG C.) and there is the epoxy radicals of more than 3 in 1 molecule, be that the epoxy resin of solid shape is (hereinafter referred to as " solid shape epoxy resin " temperature 20 DEG C.）。By also using liquid epoxy resin and solid shape epoxy resin as epoxy resin, thus can obtain that there is outstanding flexual resin combination.In addition, curable resin composition and the fracture strength of the insulating barrier formed also can improve.

As liquid epoxy resin, preferred bisphenol A type epoxy resin, bisphenol f type epoxy resin, phenol novolak type epoxy or naphthalene type epoxy resin, more preferably bisphenol A type epoxy resin, bisphenol f type epoxy resin or naphthalene type epoxy resin.As the object lesson of liquid epoxy resin, DIC(strain can be enumerated) " HP4032 " that make, " HP4032H ", " HP4032D ", " HP4032SS " (naphthalene type epoxy resin), " jER828EL " (bisphenol A type epoxy resin) that Mitsubishi Chemical's (strain) makes, " jER807 " (bisphenol f type epoxy resin), " jER152 " (phenol novolak type epoxy), " ZX1059 " (melange of bisphenol A type epoxy resin and bisphenol f type epoxy resin) that aurification (strain) is made is lived by Nippon Steel, NAGASECHEMTEX(strain) " EX-721 " (glycidyl ester type epoxy resin) of making.They can be used alone a kind, or, also can be used together two or more.

As solid shape epoxy resin, preferred naphthalene type 4 functional epoxy resins, cresol-novolak type epoxy resin, dicyclopentadiene-type epoxy resin, triphen phenol-type epoxy resin, naphthol novolac type epoxy resin, biphenyl type epoxy resin or naphthol ethyl ether type epoxy resin, more preferably naphthalene type 4 functional epoxy resins, biphenyl type epoxy resin or naphthol ethyl ether type epoxy resin, more preferably biphenyl type epoxy resin.As the object lesson of solid shape epoxy resin, DIC(strain can be enumerated) " HP-4700 " that make, " HP-4710 " (naphthalene type 4 functional epoxy resins), " N-690 " (cresol-novolak type epoxy resin), " N-695 " (cresol-novolak type epoxy resin), " HP-7200 " (dicyclopentadiene-type epoxy resin), " EXA7311 ", " EXA7311-G3 ", " HP6000 ", " EXA7311-G4 ", " EXA7311-G4S " (naphthol ethyl ether type epoxy resin), " EPPN-502H " (trisphenol epoxy resin) that Japan's chemical drug (strain) makes, " NC7000L " (naphthol novolac epoxy resin), " NC3000H ", " NC3000 ", " NC3000L ", " NC3100 " (biphenyl type epoxy resin), " ESN475V " (naphthol novolac type epoxy resin) that aurification (strain) is made is lived by Nippon Steel, " ESN485 " (naphthol novolac type epoxy resin), " YL6121 " (biphenyl type epoxy resin) that Mitsubishi Chemical's (strain) makes, " YX4000H ", " YX4000HK " (bis-xylene phenol (bixylenol) type epoxy resin), " PG-100 " that Osaka gas chemistry (strain) is made, " CG-500 ", " YL7800 " (fluorenes (fluorene) type epoxy resin) etc. that Mitsubishi Chemical's (strain) makes.

As epoxy resin, when also with liquid epoxy resin and solid shape epoxy resin, preferably their amount is the scope of 1:0.1 ~ 1:4 in mass ratio than (liquid epoxy resin: solid shape epoxy resin).By making liquid epoxy resin compare for such scope with the amount of solid shape epoxy resin, thus following effect can be obtained, that is, i) when using with the form of adhesive film, suitable adhesiveness can be realized; Ii) when using with the form of adhesive film, sufficient pliability can be obtained, improving the property disposed; And iii) can obtain the insulating barrier with sufficient fracture strength, etc.According to above-mentioned i) ~ viewpoint of effect iii), the amount of preferred liquid epoxy resin and solid shape epoxy resin is the scope of 1:0.3 ~ 1:3.5 in mass ratio than (liquid epoxy resin: solid shape epoxy resin), being more preferably the scope of 1:0.6 ~ 1:3, is particularly preferably the scope of 1:0.8 ~ 1:2.5.

The amount of the epoxy resin in resin combination is preferably 3 quality % ~ 50 quality %, is more preferably 5 quality % ~ 45 quality %, is more preferably 5 quality % ~ 40 quality %, is particularly preferably 7 quality % ~ 35 quality %.

The epoxide equivalent of preferred epoxy is 50 ~ 3000, is more preferably 80 ~ 2000, is more preferably 110 ~ 1000.By becoming this scope, thus the key density of solidfied material becomes abundant and realizes the low insulating barrier of surface roughness.In addition, epoxide equivalent is the quality carrying out the resin of epoxy radicals that measure, that comprise 1 equivalent according to JISK7236.

-curing agent-

As curing agent, as long as have the function making epoxy resin cure, just be not particularly limited, such as, phenol system curing agent can be enumerated, naphthols system curing agent, active ester system curing agent, benzodiazine (benzooxazine) be curing agent and cyanate (cyanate ester) be curing agent.Curing agent can be used alone a kind, or, also can be used together two or more.

As phenol system curing agent and naphthols system curing agent, according to viewpoint, the phenol system curing agent preferably with phenolic structure or the naphthols system curing agent with phenolic structure of thermal endurance and resistance to water.In addition, according to the viewpoint of the close property with conductor layer (wiring), preferred nitrogenous phenol system curing agent or nitrogenous naphthols system curing agent, the phenol system curing agent more preferably containing triazine (triazine) skeleton or the naphthols system curing agent containing triazine skeleton.Wherein, according to the viewpoint highly meeting thermal endurance, resistance to water and the close property (peel strength) with conductor layer, especially preferably use the phenol novolacs containing triazine skeleton as curing agent.

As the object lesson of phenol system curing agent and naphthols system curing agent, such as, can enumerate bright and change into " MEH-7700 ", " MEH-7810 ", " MEH-7851 " that (strain) make, " SN170 ", " SN180 ", " SN190 " that aurification (strain) makes live in " NHN ", " CBN ", " GPH " that Japanese chemical drug (strain) is made, Nippon Steel, " SN475 ", " SN485 ", " SN495 ", " SN375 ", " SN395 ", DIC(strain) " LA7052 ", " LA7054 ", " LA3018 " etc. that make.

Although be not particularly limited as active ester system curing agent, but, in general, preferably use the ester class etc. of phenol ester (phenol ester) class, benzenethiol ester (thiophenol ester) class, N-hydroxylamine ester (N-hydroxy amine ester) class, heterocycle hydroxyl compound in 1 molecule, have the compound of the high ester group of more than 2 reactivities.Preferably this active ester system curing agent passes through the condensation reaction of carboxylic acid compound and/or thiocarboxylic acid (thiocarboxylic acid) compound and hydroxy compounds and/or mercaptan (thiol) compound and obtains.Particularly, according to improving the viewpoint of thermal endurance, the active ester system curing agent preferably obtained by carboxylic acid compound and hydroxy compounds, the active ester system curing agent more preferably obtained by carboxylic acid compound and oxybenzene compound and/or naphthol compound.As carboxylic acid compound, such as, benzoic acid, acetic acid, butanedioic acid, maleic acid (maleic acid), itaconic acid (itaconic acid), phthalandione (phthalic acid), isophathalic acid (isophthalic acid), terephalic acid (terephthalic acid), pyromellitic acid (pyromellitic acid) etc. can be enumerated.As oxybenzene compound or naphthol compound, such as, hydroquinones (hydroquinone) can be enumerated, resorcinol (resorcin), bisphenol-A, Bisphenol F, bisphenol S, phenolphthalein (phenol phthalin), methylate bisphenol-A, methylate Bisphenol F, methylate bisphenol S, phenol, o-cresols (cresol), m-cresols, p-cresols, benzene phosphorus diphenol, alpha-Naphthol, betanaphthol, 1, 5-dihydroxy naphthlene, 1, 6-dihydroxy naphthlene, 2, 6-dihydroxy naphthlene, dihydroxy benzophenone (benzophenone), trihydroxy benzene ketone, tetrahydroxy benzene ketone, phloroglucin (phloroglucin), benzenetriol (benzenetriol), dicyclopentadiene-type bisphenol compounds, phenol novolac etc.

Specifically; the active ester compound preferably comprising dicyclopentadiene-type biphenol structure, the active ester compound comprising naphthalene structure, comprise the active ester compound of acetyl group (acetyl) compound of phenol novolac, comprise the active ester compound of benzoyl (benzoyl) compound of phenol novolac; wherein, especially comprise the active ester compound of naphthalene structure, comprise the active ester compound of dicyclopentadiene-type biphenol structure more preferably.In addition, in the present invention, so-called " dicyclopentadiene-type biphenol structure ", represents the structural units of the divalent be made up of phenylene (phenylene)-two cyclopentylene (dicyclopentalene)-phenylene.

As the market merchandising of active ester system curing agent, as the active ester compound comprising dicyclopentadiene-type biphenol structure, can enumerate " EXB9451 ", " EXB9460 ", " EXB9460S ", " HPC-8000-65T " (DIC(strain) is made), as the active ester compound comprising naphthalene structure, " EXB9416-70BK " (DIC(strain) system can be enumerated), as the active ester compound of acetyl group compound comprising phenol novolac, " DC808 " (Mitsubishi Chemical's (strain) system) can be enumerated, as the active ester compound of benzoyl compound comprising phenol novolac, " YLH1026 " (Mitsubishi Chemical's (strain) system) etc. can be enumerated.

As the object lesson of benzodiazine system curing agent, " HFB2006M " that Showa macromolecule (strain) makes can be enumerated, four countries change into " P-d ", " F-a " that industry (strain) is made.

As cyanate system curing agent, such as, bisphenol A dicyanate (dicyanate) can be enumerated, polyphenyl phenol cyanate (polyphenolcyanate), oligomeric (3-methylene-1,5-phenylenecyanate) (oligo(3-methylene-1,5-phenylenecyanate)), 4,4'-methylene two (2,6-xylenol cyanate) (4,4'-methylenebis(2,6-dimethylphenylcyanate)), 4,4'-ethylidene (ethylidene) biphenol dicyanate, hexafluoro (hexafluoro) bisphenol A dicyanate, 2,2-bis-(4-cyanate) phenol propane, 1,1-bis-(4-cyanate phenol methane), two (4-cyanate-MX) methane, 1,3-bis-(4-cyanate phenol-1-(methyl ethylidene)) benzene, two (4-cyanate phenol) thioethers (thioether) and can cyanate ester resins by two (4-cyanate phenol) ether etc. 2 officials, the multifunctional cyanate ester resin that phenol novolac and cresol-novolak etc. are derivative, these cyanate ester resin parts carry out the prepolymer etc. of triazine.As the object lesson of cyanate system curing agent, Lonza Japan(strain can be enumerated) " PT30 " and " PT60 " (being all phenol novolak type multifunctional cyanate ester resin) of making, " BA230 " (part or all of bisphenol A dicyanate is become the prepolymer of three amount bodies by triazine) etc.

About the amount ratio of epoxy resin with curing agent, by [total number of the epoxy radicals of epoxy resin]: the ratio of [total number of the reactive group of curing agent], preferably the scope of 1:0.2 ~ 1:2, is more preferably 1:0.3 ~ 1:1.5, is more preferably 1:0.4 ~ 1:1.At this, the reactive group of so-called curing agent is active hydroxy, active ester groups etc., different from the kind of curing agent.In addition, the total number of the epoxy radicals of so-called epoxy resin, it is the value that the solid state component quality of each epoxy resin is added up to all epoxy resin divided by the value of epoxide equivalent, the total number of the reactive group of so-called curing agent is the value solid state component quality of each curing agent added up to all curing agent divided by the value of reactive group equivalent.By making the amount of epoxy resin and curing agent than being such scope, thus the thermal endurance of the solidfied material of resin combination can improve further.

In one embodiment, the resin combination used in the 1st hot curing resin composition layer comprises above-mentioned inorganic filling material, epoxy resin and curing agent.In resin combination, preferably comprise silicon dioxide as inorganic filling material, mixture (the preferred liquid epoxy resin: the mass ratio of solid shape epoxy resin is the scope of 1:0.1 ~ 1:4 of liquid epoxy resin and solid shape epoxy resin is comprised as epoxy resin, be more preferably the scope of 1:0.3 ~ 1:3.5, be more preferably the scope of 1:0.6 ~ 1:3, be particularly preferably the scope of 1:0.8 ~ 1:2.5), comprise from by phenol system curing agent as curing agent, naphthols system curing agent, more than a kind of the group selection that active ester system curing agent and cyanate system curing agent are formed (is preferably from by phenol system curing agent, more than a kind of the group selection that naphthols system curing agent is formed, be more preferably from by the phenol novolacs containing triazine skeleton, more than a kind of the group selection that naphthols system curing agent is formed, be more preferably the curing agent of the phenol novolacs comprised containing triazine skeleton).The resin combination of so specific composition is comprised about combining, although the preferred amount of inorganic filling material, epoxy resin and curing agent is described above, but, wherein, especially preferably the amount of inorganic filling material is 30 quality % ~ 90 quality %, the amount of epoxy resin is 3 quality % ~ 50 quality %, and more preferably the amount of inorganic filling material is 50 quality % ~ 90 quality %, the amount of epoxy resin is 5 quality % ~ 45 quality %.About the amount of curing agent, preferably contain in the mode of the ratio of the total number of the reactive group of the total number with curing agent that make the epoxy radicals of the epoxy resin scope that is 1:0.2 ~ 1:2, be more preferably the scope of 1:0.3 ~ 1:1.5, be more preferably the scope of 1:0.4 ~ 1:1.

As required, resin combination can also comprise the additives such as thermoplastic resin, curing accelerator, fire retardant and rubber particles.

-thermoplastic resin-

As thermoplastic resin, such as, phenoxy resin, polyvinyl acetal resin (polyvinyl acetal resin), vistanex, polybutadiene, polyimide resin, polyamidoimide (polyamideimide) resin, polyether sulfone (polyethersulfone) resin, polyphenylene oxide resin and polysulfone resin etc. can be enumerated.Thermoplastic resin can be used alone a kind, or, also can be used together two or more.

Preferred thermoplastic resin to carry out the weight average molecular weight that polystyrene (polystyrene) converts be the scope of 8000 ~ 70000, be more preferably the scope of 10000 ~ 60000, more have the scope electing 20000 ~ 60000 as.Weight average molecular weight gel permeation chromatography (Gel Permeation Chromatography: the GPC) method of carrying out polystyrene conversion of thermoplastic resin is measured.Specifically, about the weight average molecular weight of carrying out polystyrene conversion of thermoplastic resin, (strain) Shimadzu Seisakusho Ltd. LC-9A/RID-6A can be used as measurement mechanism, use Showa electrician (strain) Shodex K-800P/K-804L/K-804L processed as chromatographic column (column), uses chloroform (chloroform) etc. are as mobile phase, measure at column temperature 40 DEG C, use the calibration curve of polystyrene standard to calculate.

As phenoxy resin, such as, the phenoxy resin of the skeleton of more than a kind had from the group selection be made up of bisphenol A skeleton, Bisphenol F skeleton, bisphenol S skeleton, biphenol phenyl methyl ketone skeleton, phenolic aldehyde skeleton, biphenyl backbone, fluorene skeleton, bicyclopentadiene skeleton, norborene (norbornene) skeleton, naphthalene skeleton, anthracene skeleton, adamantane (adamantane) skeleton, terpenes (terpene) skeleton and trimethyl cyclohexylamine (trimethyl cyclohexane) skeleton can be enumerated.The end of phenoxy resin can be any one functional group of phenol hydroxy, epoxy radicals etc.Phenoxy resin can be used alone a kind, or, also can be used together two or more.As the object lesson of phenoxy resin, " 1256 " and " 4250 " (being all the phenoxy resin containing bisphenol A skeleton) that Mitsubishi Chemical's (strain) makes can be enumerated, " YX8100 " (phenoxy resin containing bisphenol S skeleton) and " YX6954 " (phenoxy resin containing biphenol phenyl methyl ketone (bisphenol acetophenone) skeleton), in addition, also can enumerate Nippon Steel and live in " FX280 " and " FX293 " that aurification (strain) makes, " YL7553 " that Mitsubishi Chemical's (strain) makes, " YL6794 ", " YL7213 ", " YL7290 " and " YL7482 " etc.

As the object lesson of polyvinyl acetal resin, electrochemical butyral (butyral) 4000-2 that electrochemically industry (strain) makes can be enumerated, S-REC BH series that 5000-A, 6000-C, 6000-EP, ponding chemical industry (strain) are made, BX is serial, KS is serial, BL is serial, BM is serial.

As the object lesson of polyimide resin, can enumerate that new Japan Chemical (strain) makes " RIKACOAT(registered trade mark) SN20 " and " RIKACOAT PN20 ".In addition, as the object lesson of polyimide resin, the wire polyimides (JP 2006-37083 publication described), the modified polyimide such as polyimides (JP 2002-12667 publication and JP 2000-319386 publication etc. are described) containing polysiloxane (polysiloxane) skeleton that make 2 functional hydroxyl groups's end polybutadiene, diisocyanate cpd and tetra-atomic acid anhydride carry out reacting and obtain can be enumerated.

As the object lesson of polyamide-imide resin, can enumerate " VYLOMAX HR11NN " and " VYLOMAX HR16NN " that Japan's weaving (strain) makes.In addition, as the object lesson of polyamide-imide resin, the modified polyamide imide such as polyamidoimide " KS9100 ", " KS9300 " containing silicone matrix of Hitachi Chemical Industries (Ltd.) can be enumerated.

As the object lesson of polyethersulfone resin, " PES5003P " that Sumitomo Chemical (strain) makes etc. can be enumerated.

As the object lesson of polysulfone resin, polysulfones " P1700 ", " P3500 " etc. that Su Wei high performance plastics Co., Ltd (Solvay advanced polymers) (strain) makes can be enumerated.

The amount of the thermoplastic resin in preferred resin composition is 0.1 quality % ~ 20 quality %.By making the amount of thermoplastic resin be such scope, thus the viscosity of resin combination becomes moderate, can form thickness, the uniform resin combination of bulk density (bulk) proterties.The amount of the thermoplastic resin in preferred resin composition is 0.5 quality % ~ 10 quality %.

-curing accelerator-

As curing accelerator, such as, phosphorus system curing accelerator can be enumerated, amine (amine) is curing accelerator, imidazoles (imidazole) is curing accelerator, guanidine (guanidine) is curing accelerator etc., preferred phosphorus system curing accelerator, amine system curing accelerator, imidazoles system curing accelerator, more preferably amine system curing accelerator, imidazoles system curing accelerator.

As phosphorus system curing accelerator, such as, triphenylphosphine (triphenylphosphine) can be enumerated, boric acid phosphide (phosphonium borate) compound, tetraphenyl boron tetraphenylphosphonium (tetraphenylphosphoniumtetraphenylborate), n-butyl boron tetraphenylphosphonium (n-butylphosphoniumtetraphenylborate), tetrabutyl phosphorus caprate, (4-methylphenol) triphenyl phosphorus thiocyanates ((4-methylphenyl) triphenylphosphonium thiocyanate), tetraphenylphosphonium thiocyanates, butyl triphenyl phosphorus thiocyanates etc., triphenylphosphine, tetrabutyl phosphorus caprate.

As amine system curing accelerator, such as, the trialkylamine such as triethylamine, tri-butylamine, 4-Dimethylaminopyrimidine, benzyl dimethyl amine (benzyldimethylamine), 2 can be enumerated, 4,6 ,-three (dimethylaminomethyl) phenol, 1,8-bis-nitrine dicyclo (5,4,0)-endecatylene (undecane) etc., preferred 4-Dimethylaminopyrimidine, 1,8-bis-nitrine dicyclo (5,4,0)-endecatylene.

As imidazoles system curing accelerator, such as, glyoxal ethyline can be enumerated, 2-undecyl (undecyl) imidazoles, 2-heptadecyl (heptadecyl) imidazoles, 1,2-methylimidazole, 2-ethyl-4-methylimidazole, 1,2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenol imidazoles, 2-phenol-4-methylimidazole, 1 benzyl 2 methyl imidazole, 1-benzyl-2-phenol imidazoles, 1-cyanoethyl (cyanoethyl)-glyoxal ethyline, 1-cyanoethyl-2-undecyl imidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenol imidazoles, 1-cyanoethyl-2-undecyl imidazole trimellitic acid salt, 1-cyanoethyl-2-phenol imidazoles trimellitic acid salt, 2,4-diaminourea-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diaminourea-6-[2'-undecyl imidazole base-(1')]-ethyl-s-triazine, 2,4-diaminourea-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diaminourea-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine cyanuric acid adduct, 2-phenol imidazoles cyanuric acid adduct, 2-phenol-4,5-bishydroxymethyl imidazoles, 2-phenol-4-methyl-5 hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo-[1,2-a] benzimidazole, 1-dodecyl-2-methyl-3-benzyl imidazole chloride, glyoxal ethyline quinoline, the adduct of the imidazolium compoundss such as 2-phenol imidazoline and imidazolium compounds and epoxy resin, preferred 2-ethyl-4-methylimidazole, 1-benzyl-2-phenol imidazoles.

As guanidine system curing accelerator, such as, dicyandiamide can be enumerated, 1-methylguanidine, 1-ethyl guanidine, 1-cyclohexyl guanidine, 1-phenol guanidine, 1-(o-tolyl) guanidine, dimethylguanidine, biphenol guanidine, trimethyl guanidine, TMG, pentamethyl guanidine, 1, 5, 7-tri-nitrine dicyclo [4.4.0]-5-in last of the ten Heavenly stems alkene, 7-methyl isophthalic acid, 5, 7-tri-nitrine dicyclo [4.4.0]-5-in last of the ten Heavenly stems alkene, 1-methyl biguanides, 1-ethyl biguanides, 1-n-butyl biguanides, 1-n-octadecyl biguanides, 1, 1-dimethylbiguanide, 1, 1-diethyl biguanides, 1-cyclohexyl biguanides, 1-pi-allyl biguanides, 1-phenol biguanides, 1-(o-tolyl) biguanides etc., preferred dicyandiamide, 1, 5, 7-tri-nitrine dicyclo [4.4.0]-5-in last of the ten Heavenly stems alkene.

Curing accelerator can be used alone a kind, also can be used in combination of two or more.About the amount of the curing accelerator in resin combination, preferably when the nonvolatile component total amount of epoxy resin and curing agent is set to 100 quality %, use in the scope of 0.05 quality % ~ 3 quality %.

-fire retardant-

As fire retardant, such as, organic phosphorus flame retardant, phosphorus compound, nitrogen compound, silicone-based fire retardant, metal hydroxides etc. containing organic system nitrogen can be enumerated.Fire retardant can be used alone a kind, or, also can be used together two or more.Although the amount of the fire retardant in resin composition layer is not particularly limited, preferably 0.5 quality % ~ 10 quality %, is more preferably 1 quality % ~ 9 quality %, is more preferably 1.5 quality % ~ 8 quality %.

-rubber particles-

As rubber particles, such as, can use and be insoluble to organic solvent described later, the rubber particles also do not mixed with above-mentioned epoxy resin, curing agent and thermoplastic resin etc.In general, such rubber particles is by increasing to the grade that can not be dissolved in organic solvent or resin and making particle shape and modulate by the molecular weight of rubber constituent.

As rubber particles, such as, nucleocapsid (core-shell) type rubber particles, bridge formation acrylonitrile butadiene rubber particle, bridge formation styrene butadiene ribber particle, acrylic rubber particle etc. can be enumerated.Nucleocapsid type rubber particle is the rubber particles with stratum nucleare and shell, such as, the nucleocapsid type rubber grain etc. of 2 Rotating fields that outer field shell is made up of glassy polymers, the stratum nucleare of internal layer is made up of rubber-like polymer or the 3-tier architecture that outer field shell is made up of glassy polymers, intermediate layer is made up of rubber-like polymer, stratum nucleare is made up of glassy polymers can be enumerated.Glassy polymeric nitride layer is such as made up of methylmethacrylate polymer etc., and rubbery polymeric nitride layer is such as made up of butyl acrylate thing (butyl rubber) etc.Rubber particles can be used alone a kind, or, also can be used together two or more.

The average grain diameter of preferred rubber particle is the scope of 0.005 μm ~ 1 μm, is more preferably the scope of 0.2 μm ~ 0.6 μm.The average grain diameter of rubber particles can use dynamic light scattering method to measure.Such as, by measuring with under type, that is, utilizing ultrasonic wave etc. to make rubber particles be evenly dispersed in suitable organic solvent, using dense system granularmetric analysis device (FPAR-1000; Large tomb electronics (strain) is made), make the particle size distribution of rubber particles with quality criteria, using its median diameter as average grain diameter.The amount of the rubber particles in preferred resin composition is 1 quality % ~ 10 quality %, is more preferably 2 quality % ~ 5 quality %.

As required, the resin combination used in the 1st hot curing resin composition layer can comprise other additive, as other such additive, such as, the organo-metallic compounds such as organocopper compound, organic zinc compound and organic cobalt compounds can be enumerated, and the resin additive etc. such as organic filler, tackifier, defoamer, levelling agent (leveling agent), close property imparting agent and colouring agent.

According to the viewpoint of the slimming of parts internally-arranged type circuit board, preferably the thickness of the 1st hot curing resin composition layer is less than 80 μm, is more preferably less than 60 μm, is more preferably less than 40 μm, is more preferably less than 30 μm.The lower limit of the thickness of the 1st hot curing resin composition layer is not particularly limited, but, be generally more than 10 μm.

According to the viewpoint of the layer conformality (preventing from overflowing) during manufacture component internally-arranged type circuit board, preferably the lowest melt viscosity of the 1st hot curing resin composition layer is more than 100 pools, is more preferably more than 300 pools, is more preferably more than 500 pools.The upper limit of the lowest melt viscosity of the 1st hot curing resin composition layer is not particularly limited, but, be preferably below 10000 pools, be more preferably below 8000 pools, be more preferably below 6000 pools, be more preferably below 4000 pools, be particularly preferably below 3000 pools.

At this, " lowest melt viscosity " of so-called hot curing resin composition layer, what say is the minimum viscosity that hot curing resin composition layer presents when the resin melting of hot curing resin composition layer.In detail, when making resin melting when heating hot curing resin composition layer with constant programming rate, in the starting stage, melt viscosity rises along with temperature and reduces, after this, when exceeding certain temperature, melt viscosity rises along with temperature and rises.So-called " lowest melt viscosity ", what say is the melt viscosity of such minimal point.The lowest melt viscosity of hot curing resin composition layer is measured by dynamic viscoelastic method.Specifically, by starting in measurement, temperature is 60 DEG C to the lowest melt viscosity of hot curing resin composition layer, programming rate is 5 DEG C/minute, vibration number is 1Hz, shape is carried out dynamic viscoelastic measurement under becoming the condition of 1deg and obtained.As dynamic viscoelastic measurement mechanism, such as, can enumerate " Rheosol-G3000 " of (strain) UBM.

(the 2nd adhesive film)

The 2nd hot curing resin composition layer that 2nd adhesive film comprises the 2nd supporting mass and engages with the 2nd supporting mass.

The material of the 2nd supporting mass can be identical with thickness with the material be described above-mentioned 1st supporting mass with thickness.

The material of the 2nd hot curing resin composition layer can be identical with the material be described above-mentioned 1st hot curing resin composition layer.

The viewpoint of the excessive reduction of the viewpoint reduced according to the coefficient of thermal expansion of the insulating barrier making to obtain and melt viscosity when preventing hot curing and the position skew of suppression component, the amount of the inorganic filling material in the resin combination of preferred formation the 2nd hot curing resin composition layer is more than 30 quality %, it is preferred for being more preferably more than 40 quality %, be more preferably more than 50 quality %, be more preferably more than 60 quality %, be particularly preferably more than more than 62 quality %, more than 64 quality % or 66 quality %.Particularly, according to the viewpoint that the position of suppression component offsets, be preferably more than 50 quality %.According to the viewpoint of the mechanical strength of the insulating barrier obtained and the viewpoint of imbedibility, the upper limit of the amount of the inorganic filling material in preferred resin composition is below 90 quality %, is more preferably below 85 quality %.

According to the viewpoint of the slimming of parts internally-arranged type circuit board, preferably the thickness of the 2nd hot curing resin composition layer is less than 100 μm, is more preferably less than 80 μm, is more preferably less than 60 μm, is more preferably less than 50 μm.Although the lower limit of the thickness of the 2nd hot curing resin composition layer also depends on the thickness etc. of internal substrate, according to the imbedibility of parts and the viewpoint of chamber fillibility, be generally more than 15 μm.

In a preferred execution mode, the 2nd hot curing resin composition layer is than the 1st hot curing resin composition thickness.

According to realizing the imbedibility of sufficient parts and the viewpoint of chamber fillibility when manufacture component internally-arranged type circuit board, preferably the lowest melt viscosity of the 2nd hot curing resin composition layer is below 10000 pools, be more preferably below 8000 pools, be more preferably below 6000 pools, be more preferably below 4000 pools, be particularly preferably below 3000 pools.According to the viewpoint of the layer conformality (preventing from overflowing) during manufacture component internally-arranged type circuit board, preferably the lower limit of the lowest melt viscosity of the 2nd hot curing resin composition layer is more than 100 pools, is more preferably more than 300 pools, is more preferably more than 500 pools.

Below, an example of the order of making the 1st and the 2nd adhesive film is shown.

About adhesive film, no matter be the 1st adhesive film or the 2nd adhesive film, such as, by such as under type making, that is, modulate resin varnish resin combination being dissolved in organic solvent, use dip coater (die coater) etc. to be coated on supporting mass by this resin varnish, make resin varnish dry.

As organic solvent, such as, the amine series solvents etc. such as the hydrocarbon class of the aromatic series such as carbitol class, toluene and dimethylbenzene, dimethyl formamide, dimethylacetylamide and 1-METHYLPYRROLIDONE such as acetates, cellosolve and butyl carbitol such as the ketones such as acetone, methyl ethyl ketone and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate (cellosolve acetate), propylene glycol methyl ether acetate (propylene glycol monomethylether acetate) and carbitol acetate (carbitol acetate) can be enumerated.Organic solvent can be used alone a kind, or, also can be used together two or more.

The drying of resin varnish can be implemented by well-known drying means such as heating, injection hot blasts.Although different from the boiling point of the organic solvent in resin varnish, but, when such as use comprises the resin varnish of the organic solvent of 30 quality % ~ 60 quality %, by drying at 50 DEG C ~ 150 DEG C 3 minutes ~ 10 minutes, thus hot curing resin composition layer can be formed on supporting mass.

About adhesive film, no matter be the 1st adhesive film or the 2nd adhesive film, in the face do not engaged with the supporting mass of the hot curing resin composition layer face of supporting mass opposition side (that is, with), can also diaphragm be comprised.Diaphragm is attached to the surface of hot curing resin composition layer to preventing dust etc. or prevents scratch from contributing.As the material of diaphragm, the material identical with the material be described supporting mass can be used.The thickness of diaphragm is not particularly limited, such as, be 1 μm ~ 40 μm.About adhesive film, when manufacture component internally-arranged type circuit board, can use by peelling off diaphragm.

Above, although show an example of the order of making the 1st and the 2nd adhesive film, as long as the 1st and the 2nd adhesive film can be obtained, be just not limited to above-mentioned order.Such as, after hot curing resin composition layer can being formed on diaphragm, stacked supporting mass on this hot curing resin composition layer and make adhesive film.In the present invention so-called " supporting mass ", say be when manufacture component internally-arranged type circuit board and hot curing resin composition layer is together layered in the component of the interarea of internal substrate, restrictively do not represent the supporting member of resin varnish when manufacturing adhesive film.

Below, the manufacture method of parts internally-arranged type circuit board of the present invention is preferred embodiment explained in conjunction with it.

The method > of < the 1st execution mode

In the method for the 1st execution mode of the present invention, use circuit substrate as internal substrate.Thus, the method for the 1st execution mode of the present invention comprises following operation (A1), (B1), (C1) and (D1) in order:

(A1) in the mode making the 1st hot curing resin composition layer engage with the 1st interarea of circuit substrate, by the vacuum laminated operation at circuit substrate of the 1st adhesive film, wherein, described circuit substrate has the 1st and the 2nd interarea, be formed with the chamber between the through 1st and the 2nd interarea, the 1st hot curing resin composition layer that described 1st adhesive film comprises the 1st supporting mass and engages with the 1st supporting mass;

(B1) parts are assemblied in temporarily the operation of the 1st hot curing resin composition layer in chamber;

(C1) in the mode making the 2nd hot curing resin composition layer engage with the 2nd interarea of circuit substrate, by the operation of vacuum laminated for the 2nd adhesive film the 2nd interarea at circuit substrate, carry out vacuum laminated under the condition that heating-up temperature on the 1st adhesive film surface is lower than the heating-up temperature on the 2nd adhesive film surface, wherein, described 2nd adhesive film the 2nd hot curing resin composition layer that comprises the 2nd supporting mass and engage with the 2nd supporting mass;

(D1) make the 1st and the 2nd hot curing resin composition layer hot curing and form the operation of insulating barrier.

Below, with reference to Fig. 4 A to Fig. 4 G, while be described each operation of the method for the 1st execution mode of the present invention.

-operation (A1)-

In operation (A1), the mode engaged with the 1st interarea of circuit substrate to make the 1st hot curing resin composition layer 102 is being formed with the circuit substrate 11 ' (Fig. 4 A) in chamber by vacuum laminated for the 1st adhesive film 100.

Be formed with the structure of the circuit substrate 11 ' in chamber and the 1st adhesive film 100 as previously mentioned.

About the 1st adhesive film 100 to circuit substrate 11 ' vacuum laminated being formed with chamber, such as, by carrying out with under type, that is, under lower pressure, be crimped on from the 1st supporting mass 101 side by the 1st adhesive film 100 heating the circuit substrate 11 ' being formed with chamber.(not shown as the component the 1st adhesive film 100 heating being crimped on the circuit substrate 11 ' being formed with chamber; Hereinafter also referred to as " adding thermo-compressed component "), such as can enumerate the metallic plate (SUS runner plate etc.) after heating or metallic roll (SUS roller) etc.In addition, not directly be embossed in the 1st adhesive film 100 by adding thermo-compressed component, but preferably carry out mold pressing via heat resistant rubber elastomeric material, the 1st adhesive film 100 is followed fully result from the wiring 13 of the circuit substrate 11 ' being formed with chamber, the concavo-convex of chamber 12a.

Preferably add the scope that thermo-compressed temperature is 60 DEG C ~ 160 DEG C, be more preferably the scope of 70 DEG C ~ 140 DEG C, be more preferably the scope of 80 DEG C ~ 130 DEG C, preferably add the scope that thermo-compressed pressure is 0.098MPa ~ 1.77MPa, be more preferably the scope of 0.29MPa ~ 1.47MPa, be more preferably the scope of 0.40MPa ~ 1.10MPa, preferably add the scope that the thermo-compressed time is 10 seconds ~ 400 seconds, be more preferably the scope of 20 seconds ~ 300 seconds, be more preferably the scope of 20 seconds ~ 200 seconds.Preferably vacuum laminatedly to implement under the reduced pressure of below pressure 26.7hPa.In addition, what is called adds thermo-compressed temperature, and what say is the surface temperature adding thermo-compressed component, and when carrying out mold pressing via heat resistant rubber elastomeric material, what say is the temperature on the surface of this elastomeric material engaged with the 1st adhesive film.

The vacuum laminated vacuum laminator that market can be utilized to sell is carried out.As the vacuum laminator that market is sold, such as, (strain) name mechanism can be enumerated and do made vacuum pressure type laminating machine, Nichigo-Morton(strain) vacuum plant (vaccum applicator) etc. made.

In such operation (A1), the 1st hot curing resin composition layer 102 engages (Fig. 4 B) with the 1st interarea of the circuit substrate 1 ' being formed with chamber.Now, circuit 13 such as being formed in the surface wiring of the 1st interarea of circuit substrate is imbedded by the 1st hot curing resin composition layer 102, and is filled into a part of region (Fig. 4 B) in the 12a of chamber.Below, region in the chamber 12a filled by the 1st hot curing resin composition layer 102 is called in " resin filling region ", region (that is, the region in the chamber 12a do not filled by the 1st hot curing resin composition layer 102) in chamber 12a beyond this resin filling region is called " non-resin fill area ".

In operation (A1), the height h in the chamber of the circuit substrate preferably before vacuum laminated 1st adhesive film _athe height h of the non-resin fill area in the chamber of the circuit substrate after (Fig. 4 A) and vacuum laminated 1st adhesive film _b(Fig. 4 B) meets 0.8h _a≤ h _b≤ h _arelation, be more preferably and meet 0.85h _a≤ h _b≤ h _arelation, be more preferably and meet 0.90h _a≤ h _b≤ h _arelation, be particularly preferably and meet 0.95h _a≤ h _b≤ h _arelation.At h _b<0.8h _awhen, have following tendency, that is, when the middle setting parts of operation described later (B1), the resin easily movement in resin filling region, is difficult to parts to be assemblied in desired position temporarily.And then parts easily become state outstanding outside chamber, in operation described later (C1), pressure concentrates on parts and becomes the position skew of easy production part.Pass through h _awith h _bmeet above-mentioned relation, even if thus when using thin circuit substrate, also can guarantee the sufficient space for build-in components, and can the position skew of validity ground suppression component.

In operation (A1), when carrying out vacuum laminated to the 1st adhesive film with the circuit substrate being formed with chamber, also the 2nd interarea of the circuit substrate being formed with chamber can be provided with diaphragm.As diaphragm, the membranaceous interim fabricated material of the interim assembling being used in parts in the prior art can be used, such as, the UC series (wafer slice UV is with) of The Furakawa Electric Co., Ltd. can be enumerated.When the 2nd interarea of the circuit substrate being formed with chamber is provided with diaphragm, about this substrate, after operation (A1), as long as peel off diaphragm can be used in operation (B1).

In addition, about the 1st supporting mass, as long as make the 1st hot curing resin composition layer solidification and carry out peeling off before the operation of insulating barrier that obtains conductor layer (wiring) is arranged at, such as, both can peel off between operation described later (C1) and operation (D1), also can peel off after operation described later (D1).In a preferred embodiment, the 1st supporting mass is peeled off after operation described later (D1).In addition, when using the metal formings such as Copper Foil as the 1st supporting mass, as described later, due to such metal forming can be used to arrange conductor layer (wiring), so the 1st supporting mass also can not be peeled off.

-operation (B1)-

In operation (B1), parts 15 are assemblied in temporarily the 1st hot curing resin composition layer 102(Fig. 4 C in the 12a of chamber).That is, parts 15 are assemblied in temporarily the 1st hot curing resin composition layer 102 exposed in the 12a of chamber.

As parts 15, suitable electric component can be selected according to required characteristic, such as, the active parts such as passive component, semiconductor bare chip such as capacitor, inductor, resistance can be enumerated.Both identical parts 15 can be used in all chambeies, also different parts 15 can be used by each chamber.

As previously mentioned, in the prior art, be used in follow-up operation carry out peeling off and the interim fabricated material be removed to carry out the interim assembling of parts.In this art, in order to prevent the position skew of the parts in the coming off of parts when interim fabricated material being peeled off removing, chamber, at the interarea with the interarea opposition side being provided with interim fabricated material, hot curing resin composition layer is set, by after filling with hot curing resin composition in chamber, make this hot curing resin composition hot curing and form firming body (insulating barrier).But, in this art, in the miniaturization in order to reach parts internally-arranged type circuit board, slimming and under using the situations such as circuit substrate that chamber density is high, circuit substrate that thickness is thin, formed in the stage of insulating barrier at the interarea of the folk prescription of circuit substrate sometimes and produce substrate warp.On the other hand, in the present invention, parts are assemblied in temporarily the hot curing resin composition layer becoming insulating barrier afterwards.Thus, in the present invention, do not need peel off and remove interim fabricated material, advantageously can solve the problem of the substrate warp accompanied with prior art.

In operation (B1), result from the surface adhesion of the 1st hot curing resin composition layer in chamber, parts keep by the 1st hot curing resin composition layer.According to the fusible viewpoint on the surface of the 1st hot curing resin composition layer, preferably implement operation (B1) in a heated condition.As the method for heating, such as, can enumerate and heater is engaged with the 1st supporting mass and carries out the method that heats.Heater both directly can engage with the 1st supporting mass, also can engage with the 1st supporting mass via aforesaid heat resistant rubber elastomeric material.

As long as the surface energy of the 1st hot curing resin composition layer in chamber embodies sufficient adhesiveness, the heating condition in operation (B1) is just not particularly limited.In a preferred execution mode, according to the fusible viewpoint of the 1st hot curing resin composition layer, the heating-up temperature in preferable process (B1) is more than 60 DEG C, is more preferably more than 70 DEG C, is more preferably more than 80 DEG C, is more preferably more than 90 DEG C.According to the viewpoint of substrate warp of solidification preventing from, suppress resulting from the 1st hot curing resin composition layer, the upper limit of preferred heating-up temperature is less than 140 DEG C, is more preferably less than 135 DEG C, is more preferably less than 130 DEG C.Heating-up temperature in so-called operation (B1), what say is when using heater to heat from the 1st supporting side, the surface temperature of this heater.

About the heating time in operation (B1), as long as the interim build-up member sufficient time, be preferably more than 2 seconds, be more preferably more than 3 seconds, be more preferably more than 4 seconds.The upper limit of heating time can be set to less than 60 seconds usually.

Preferably under atmospheric pressure (under normal pressure) carries out the heat treated in operation (B1).

In a preferred embodiment, the warpage of the substrate preferably obtained in operation (B1) is below 25mm, is more preferably below 20mm, is more preferably below 15mm, be more preferably below 10mm, be particularly preferably below 5mm.In addition, the warpage of so-called substrate, mean be fixed on setting tool the substrate obtained in operation (B1) and vertically sling relative to ground (horizontal plane) time apart from the arithmetic average of the vertical height at the both ends of the opposite side of the substrate of imaginary vertical plane.Specifically, the warpage of substrate is measured by the method for measurement recorded in an embodiment.

Also after operation (B1), the 1st hot curing resin composition layer can be heated further.Thus, the position of the parts in operation described later (C1) can be suppressed further to offset.Thus, in a preferred embodiment, method of the present invention comprises the operation of (B1 ') heating the 1st hot curing resin composition layer between operation (B1) and operation (C1).

According to the viewpoint of the position skew of the parts suppressed in operation (C1), the heating-up temperature in preferable process (B1 ') is more than 80 DEG C, is more preferably more than 90 DEG C, is more preferably more than 100 DEG C.According to the viewpoint of substrate warp of solidification preventing from, suppress resulting from the 1st hot curing resin composition layer, the upper limit of preferred heating-up temperature is less than 150 DEG C, is more preferably less than 140 DEG C, is more preferably less than 130 DEG C, be more preferably less than 120 DEG C.

According to the viewpoint of the position skew of the parts suppressed in operation (C1), heating time in preferable process (B1 ') is more than 30 seconds, be more preferably more than 1 minute, be more preferably more than 3 minutes, be more preferably more than 5 minutes, more than 10 minutes or more than 20 minutes.According to the viewpoint of substrate warp of solidification preventing from, suppress resulting from the 1st hot curing resin composition layer, the upper limit of heating time can be set to less than 60 minutes usually.

Preferably under atmospheric pressure (under normal pressure) carries out the heat treated in operation (B1 ').

When implementing operation (B1) in a heated condition, after operation (B1), both can be transferred directly to operation (B1 '), also can make circuit substrate be cooled to normal temperature (room temperature) after transfer to operation (B1 ').

-operation (C1)-

In operation (C1), in the mode making the 2nd hot curing resin composition layer 202 engage with the 2nd interarea of circuit substrate, by vacuum laminated for the 2nd adhesive film 200 the 2nd interarea (Fig. 4 D) at circuit substrate.

In such operation (C1), the 2nd hot curing resin composition layer 202 is filled in the 12a of chamber, and the parts 15 be temporarily assemblied in the 12a of chamber are embedded to the 2nd hot curing resin composition layer 202(Fig. 4 E).

According to the viewpoint that the position of suppression component offsets, it is important for implementing operation (C1) under the condition that the heating-up temperature on the 1st adhesive film surface is lower than the heating-up temperature on the 2nd adhesive film surface.

The heating-up temperature on the 1st adhesive film surface is being set to T ₁(DEG C), the heating-up temperature on the 2nd adhesive film surface is set to T ₂time (DEG C), according to the viewpoint that the position of suppression component offsets, preferred T ₁and T ₂meet T ₂-40≤T ₁≤ T ₂the relation of-10, more preferably meets T ₂-40≤T ₁≤ T ₂the relation of-15, more preferably meets T ₂-35≤T ₁≤ T ₂the relation of-15, more preferably meets T ₂-35≤T ₁≤ T ₂the relation of-20.

According to the viewpoint of the imbedibility and chamber fillibility that realize sufficient parts, preferably the heating-up temperature T on the 2nd adhesive film surface ₂be more than 120 DEG C, be more preferably more than 125 DEG C, be more preferably more than 130 DEG C, more than 135 DEG C, more than 140 DEG C or more than 145 DEG C.According to the viewpoint that the position of suppression component offsets, preferred T ₂the upper limit be less than 200 DEG C, be more preferably less than 180 DEG C.

About the heating-up temperature T on the 1st adhesive film surface ₁if, T ₁and T ₂meet above-mentioned relation to be just not particularly limited, but, according to the viewpoint that the position of suppression component offsets, preferably less than 140 DEG C, be more preferably less than 135 DEG C, be more preferably less than 130 DEG C, be particularly preferably less than 125 DEG C, less than 120 DEG C or less than 115 DEG C.About T ₁lower limit, as long as T ₁and T ₂meet above-mentioned relation to be just not particularly limited, usually can be set to more than 60 DEG C.

In the present invention, the heating-up temperature T on so-called 1st adhesive film surface ₁(DEG C), what say is and the 1st surface temperature adding thermo-compressed component that engages of adhesive film surface, and when carrying out mold pressing via heat resistant rubber elastomeric material, what say is the temperature on the surface of this elastomeric material engaged with the 1st adhesive film.In addition, the heating-up temperature T on so-called 2nd adhesive film surface ₂(DEG C), what say is and the 2nd surface temperature adding thermo-compressed component that engages of adhesive film surface, and when carrying out mold pressing via heat resistant rubber elastomeric material, what say is the temperature on the surface of this elastomeric material engaged with the 2nd adhesive film.

Vacuum laminated about the 2nd adhesive film 200 in operation (C1), except above-mentioned temperature conditions, can adopt vacuum laminated identical method, condition with the 1st adhesive film in operation (A1).Such as, according to suppressing the viewpoint producing pore (void), the pumpdown time in preferable process (C1) is more than 20 seconds, is more preferably more than 30 seconds, more than 40 seconds, more than 50 seconds or more than 60 seconds.Particularly, elapsed time after implementing operation (A1) until during enforcement operation (C1) is longer, by the pumpdown time in operation (C1) being set longer (such as, more than 30 seconds, more than 40 seconds, more than 50 seconds or more than 60 seconds) and effectively suppress to produce pore in a insulating layer.

In operation (C1), according to the viewpoint that the position of suppression component offsets, preferably the melt viscosity of the 1st hot curing resin composition layer maintains more than 2000 pools, be more preferably and maintain more than 3000 pools, be more preferably and maintain more than 4000 pools, be more preferably and maintain more than 5000 pools, be particularly preferably and maintain more than 6000 pools, 7000 pools are above, 8000 pools are above, 9000 pools are above or more than 10000 pools.By adopting above-mentioned temperature conditions, thus imbedibility and the chamber fillibility of the sufficient parts utilizing the 2nd hot curing resin composition layer can be realized, while the melt viscosity of the 1st hot curing resin composition layer is maintained such scope.The upper limit of the melt viscosity of the 1st hot curing resin composition layer in operation (C1) is not particularly limited, and is generally below 1000000 pools.

About the melt viscosity of the 1st hot curing resin composition layer in operation (C1), by temperature T ₁carry out dynamic viscoelastic measurement under (DEG C) and obtain.The measurement mechanism that can use in the measurements is described above.

The structure of the 2nd adhesive film 200 as previously mentioned.In addition, the 2nd supporting mass 201 of the 2nd adhesive film 200 used in operation (C1) both can be identical with the 1st supporting mass 101 of the 1st adhesive film 100 used in operation (A1), also can be different.

In addition, the resin combination for the 2nd hot curing resin composition layer both can be identical with the resin combination for the 1st hot curing resin composition layer, also can be different.

The hot curing resin composition layer of insulating barrier was become afterwards (namely according to use, 1st hot curing resin composition layer) as the method for the present invention of the interim fabricated material of parts, even if when the miniaturization in order to reach parts internally-arranged type circuit board, slimming and the circuit substrate using circuit substrate that chamber density is high, thickness thin, also can suppress the generation of substrate warp.Therefore, can when successfully not implementing operation (C1) to causing when obstacle from the substrate transmission of operation (B1) to operation (C1).And then, implement under above-mentioned specific temperature conditions in the present invention of operation (C1), can also suppress to offset with the position of the vacuum laminated parts accompanied of operation (C1), the parts internally-arranged type circuit board that the configuration precision of parts is outstanding can be realized with good rate of finished products.

Preferably carry out such as carrying out mold pressing and to the operation of the face of the 1st adhesive film side after stacked and face smoothingization of the 2nd adhesive film side (hereinafter also referred to as " operation (C1 ') " from the 2nd supporting mass 202 side or from the 1st supporting mass 102 side and the 2nd these both sides, supporting mass 202 side to adding thermo-compressed component by (under atmospheric pressure) at ambient pressure after operation (C1).）。Thus, in a preferred embodiment, the method for the 1st execution mode of the present invention comprises by the operation of heating and mould pressing to face smoothingization of the face of the 1st adhesive film side and the 2nd adhesive film side between operation (C1) and operation (D1).The mold pressing parameter of operation (C1 ') can be set to and the identical condition of the thermo-compressed condition that adds in above-mentioned operation (C1).

Operation (C1 ') undertaken by the laminating machine of market sale.In addition, operation (C1) and operation (C1 ') is carried out to the vacuum laminator continuity that above-mentioned market also can be used to sell.

In a preferred execution mode, operation (C1) (and operation (C1 ')) in, the position undermigration of parts 40 μm.At this, the position skew of so-called parts, what say is the center of the parts of the time point being temporarily assemblied in the 1st hot curing resin composition layer in operation (B1) and the change in location at the center of the parts of (when implementing operation (C1 '), being after smoothingization processes) in operation (C1) after vacuum laminated 2nd hot curing resin composition layer.Specifically, the position skew of parts is measured by the method for measurement recorded in an embodiment.

In addition, about the 2nd supporting mass 201, as long as make the 2nd hot curing resin composition layer solidification and carry out peeling off before the operation of insulating barrier that obtains conductor layer (wiring) is arranged on, such as, both can peel off between operation (C1) and operation described later (D1), also can peel off after operation described later (D1).In a preferred execution mode, after operation described later (D1), peel off the 2nd supporting mass.In addition, when using the metal formings such as Copper Foil as the 2nd supporting mass, as described later, due to such metal forming can be used to arrange conductor layer (wiring), so the 2nd supporting mass also can not be peeled off.

-operation (D1)-

In operation (D1), make the 1st and the 2nd hot curing resin composition layer hot curing and form insulating barrier.Thus, the 1st hot curing resin composition layer 102 forms insulating barrier 102 ', and the 2nd hot curing resin composition layer 202 forms insulating barrier 202 ' (Fig. 4 F).

The condition of hot curing is not particularly limited, the condition usually adopted when can be used in the insulating barrier forming printed wiring board.

Such as, although the hot curing condition of the 1st and the 2nd hot curing resin composition layer is according to being used for the composition etc. of resin combination of each hot curing resin composition layer and different, but, the scope that curing temperature can be set to 120 DEG C ~ 240 DEG C (is preferably the scope of 150 DEG C ~ 210 DEG C, be more preferably the scope of 170 DEG C ~ 190 DEG C), is set to the scope (be preferably 10 minutes ~ 75 minutes, be more preferably 15 minutes ~ 60 minutes) of 5 minutes ~ 90 minutes curing time.

Also can preheat the 1st and the 2nd hot curing resin composition layer at the temperature lower than curing temperature before hot curing.Such as, can before hot curing, (more than 60 DEG C, less than 110 DEG C are preferably more than 50 DEG C, less than 120 DEG C, be more preferably more than 70 DEG C, less than 100 DEG C) temperature under, 1st and the 2nd hot curing resin composition layer is preheated more than 5 minutes (are preferably 5 minutes ~ 150 minutes, are more preferably 15 minutes ~ 120 minutes).Carrying out in pre-warmed situation, making such preheating also be included in operation (D1).

Preferably under atmospheric pressure (under normal pressure) carries out the hot curing of the 1st and the 2nd hot curing resin composition layer in operation (D1).

Preferably implement operation (D1) being maintained by substrate under approximate horizontal state.Such as, operation (D1) is implemented under the state that the axle preferably on the thickness direction of substrate with respect to the horizontal plane becomes the scope of 80 ° ~ 100 °.

As previously mentioned, preferably after operation (D1), the 1st and the 2nd supporting mass is peeled off.Thus, in operation (D1), preferably under with the state of the 1st and the 2nd supporting mass, make the 1st and the 2nd hot curing resin composition layer carry out hot curing.Thus, the insulating barrier on the surface with low roughness can be obtained.

In a preferred execution mode, process circuit substrate being cooled to normal temperature (room temperature) can be implemented between operation (C1) and operation (D1).

In addition, in the following description, the insulating barrier 102 ' sometimes obtained making the 1st hot curing resin composition layer 102 carry out hot curing is called " the 1st insulating barrier ".In addition, the insulating barrier 202 ' sometimes obtained making the 2nd hot curing resin composition layer 202 carry out hot curing is called " the 2nd insulating barrier ".

-other operation-

The method of the 1st execution mode of the present invention also can comprise that (E1) carries out the operation of perforate, (F1) forms the operation of conductor layer on the insulating layer.These operations (E1) and (F1) can according to use in the manufacture of printed wiring board, to those skilled in the art well-known various method implement.In addition, when peeling off the 1st and the 2nd supporting mass after operation (D1), the stripping of the 1st and the 2nd supporting mass can be implemented between operation (D1) and operation (E1) or between operation (E1) and operation (F1).

Operation (E1) is the operation of carrying out perforate.Thus, the hole such as guide hole and through hole can be formed.In a preferred execution mode, operation (E1) is included in the 1st and the 2nd insulating barrier and forms guide hole.Such as, drill bit, laser, plasma etc. can be used to form guide hole at the 1st and the 2nd insulating barrier.

According to the viewpoint protecting surface of insulating layer when forming hole, preferably before stripping the 1st and the 2nd supporting mass, implement operation (E1).Under these circumstances, such as, can be formed from irradiating laser supporting mass guide hole and by etc. hole.In addition, also can use containing the supporting mass with the Wavelength matched laser light absorbing material of used laser to improve for the purpose of laser processing.Opening diameter, the opening shape in the hole such as guide hole and through hole can determine aptly according to the design of wiring.

When forming hole by laser, as LASER Light Source, such as, carbon dioxide laser, YAG laser, excimer laser etc. can be enumerated.Wherein, according to the viewpoint of process velocity, cost, particularly preferably carbon dioxide laser.

Operation (F1) is the operation forming conductor layer on the insulating layer.

The conductor material used in conductor layer is not particularly limited.In a preferred embodiment, conductor layer comprises the metal of more than a kind from the group selection be made up of gold, platinum, palladium, silver, copper, aluminium, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium.Conductor layer both can be elemental metals layer, can be also alloy-layer, as alloy-layer, such as, can enumerate the layer formed by the alloy of the two or more metal from above-mentioned group selection (such as, nichrome, corronil and copper-titanium alloy).Wherein, the viewpoint such as easiness of the versatility formed according to conductor layer, cost, composition, the particularly preferably elemental metals layer of chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or copper, or nickel-chromium alloy, copper-nickel alloy, copper-titanium alloy alloy-layer, more preferably the elemental metals layer of chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or copper, or the alloy-layer of nickel-chromium alloy, more preferably the elemental metals layer of copper.

Conductor layer can be single layer structure, also can be the multilayer structure being laminated with the two-layer above elemental metals layer be made up of different types of metal or alloy or alloy-layer.When conductor layer is multilayer structure, the layer preferably connected with insulating barrier is the elemental metals layer of chromium, zinc or titanium, or the alloy-layer of nickel-chromium alloy.

Although the thickness dependence of conductor layer is in the design of required parts internally-arranged type circuit board, be generally 3 μm ~ 35 μm, be preferably 5 μm ~ 30 μm.

In one embodiment, operation (F1) comprises and carries out roughening treatment and the insulating barrier after alligatoring form conductor layer by plating to insulating barrier.

Order, the condition of roughening treatment are not particularly limited, and can adopt normally used well-known order, condition when manufacturing printed wiring board.Such as, can implement in order the swelling process utilizing swelling liquid to carry out, the roughening treatment utilizing oxidant to carry out, utilize neutralizer to carry out neutralisation treatment and roughening treatment is carried out to the 1st and the 2nd insulating barrier.Be not particularly limited as swelling liquid, can enumerate aqueous slkali, interfacial activity agent solution etc., preferably aqueous slkali, as this aqueous slkali, is more preferably sodium hydroxide solution, aqua calcis.As the swelling liquid of commercial type, such as, ATOTECH JAPAN(strain can be enumerated) Swelling Dip Securiganth P, the Swelling Dip Securiganth SBU etc. that make.The swelling process utilizing swelling liquid to carry out is not particularly limited, and such as, is undertaken by the 1st and the 2nd insulating barrier is immersed in the swelling liquid of 30 ~ 90 DEG C 1 minute ~ 20 minutes.Suppress the viewpoint in moderate grade according to the swelling of the resin by the 1st and the 2nd insulating barrier, preferably make the 1st and the 2nd insulating barrier be immersed in the swelling liquid of 40 ~ 80 DEG C 5 seconds ~ 15 minutes.As oxidant, be not particularly limited, such as, the alkalescence of having dissolved calcium permanganate or sodium permanganate in the aqueous solution of NaOH can be enumerated and cross mangaic acid solution.About utilizing the alkaline roughening treatment of crossing the oxidants such as mangaic acid solution and carrying out, preferably making the 1st and the 2nd insulating barrier be immersed in the oxidizing agent solution being heated to 60 DEG C ~ 80 DEG C 10 minutes ~ 30 minutes and carrying out.In addition, preferably the concentration of the alkaline permanganate crossed in mangaic acid solution is 5 quality % ~ 10 quality %.As the oxidant of commercial type, such as, ATOTECH JAPAN(strain can be enumerated) alkalescence such as the Concentrate Compact CP, the Dosing Solution Securiganth P that make crosses mangaic acid solution.In addition, as neutralizer, the preferably acid aqueous solution, as market merchandising, such as, can enumerate ATOTECH JAPAN(strain) the Reduction Solution Securiganth P that makes.The process utilizing neutralizer to carry out is undertaken by making the treated side utilizing oxidizing agent solution to carry out roughening treatment be immersed in the neutralizer of 30 ~ 80 DEG C 5 minutes ~ 30 minutes.From the viewpoint of workability etc., preferably the object utilizing oxidizing agent solution to carry out roughening treatment is immersed in the method for in the neutralizer of 40 ~ 70 DEG C 5 minutes ~ 20 minutes.

About the formation method of conductor layer, as long as the conductor layer (wiring) with required pattern can be formed, be just not particularly limited.Such as, in the past by half addition (semiadditive) method, full addition (full additive) method etc. carried out plating and formed the conductor layer (wiring) with required pattern in the surface of well-known technology to the 1st and the 2nd insulating barrier.Below, the example being formed conductor layer by semi-additive process is shown.

First, the surface formation plating Seed Layer of the 1st and the 2nd insulating barrier is overlayed on by electroless plating.Next, the plating Seed Layer formed is formed the mask pattern making a part for plating Seed Layer expose accordingly with required wiring pattern.After forming metal level by electrolytic coating in the plating Seed Layer exposed, removing mask pattern.After this, wait the unwanted plating Seed Layer of removing by etching, form the conductor layer with required pattern.

When using the metal formings such as Copper Foil as the 1st and the 2nd supporting mass, also conductor layer can be formed by utilizing refining (subtractive) method etc. of this metal forming.In addition, also using metal forming as plating Seed Layer, conductor layer can be formed by electrolytic coating.

In the holes such as guide hole, conductor (wiring) is also formed with by these operations, be arranged on the 1st and the 2nd insulating barrier 102 ' and 202 ' the wiring 13 on surface, the wiring of circuit substrate and parts be electrically connected, obtain parts internally-arranged type circuit board 1000(Fig. 4 G).In addition, as long as can realize electrical connection, the inside in the holes such as guide hole just need not be filled with conductor, also can form the thin layer of conductor in the mode of the wall applying hole.

In addition, the method for the 1st execution mode of the present invention can also comprise (G1) carries out sheet operation to parts internally-arranged type circuit board.

In operation (G1), such as, can rotate that the former well-known cutter sweep of blade carry out grinding and the structure sheet that obtains turns to parts internally-arranged type circuit board unit one by one by by possessing.

Above, although in conjunction with being preferred embodiment illustrated the method for the 1st execution mode of the present invention, but, as long as comprise each operation of above-mentioned operation (A1) to (D1), and each operation of operation (A1) to (D1) is implemented according to this order, the method for the 1st execution mode of the present invention is just not limited to the above-mentioned execution mode specifically illustrated.Such as, operation (G1) can be carried out between operation (C1) and operation (D1), between operation (D1) and operation (E1) or between operation (E1) and operation (F1).In addition, also can repeat operation (A1) to (F1), seek further laminates linearize.In the method for the 1st execution mode of the present invention, many variation can be considered.

The method > of < the 2nd execution mode

In the method for the 2nd execution mode of the present invention, use insulated substrate as internal substrate.

As previously mentioned, when manufacture component internally-arranged type circuit board, the general circuit substrate that uses is as internal substrate.At use circuit substrate as in the execution mode of internal substrate, in general, by by the inside of component configuration at circuit substrate, next stack gradually insulating barrier, conductor layer, thus the parts internally-arranged type circuit board possessing multilayer wiring can be obtained.About this point, sometimes according to electronic equipment, adopt the circuit board (2 layers of circuit board) being formed with circuit on the two sides of insulated substrate.The present inventor expects, under these circumstances, by the inside of component configuration at insulated substrate, next, forms insulating barrier and conductor layer, obtains higher function thus and can carry out 2 layers of miniaturized circuit board.

Thus, the method for the 2nd execution mode of the present invention comprises following operation (A2), (B2), (C2) and (D2) in order:

(A2) in the mode making the 1st hot curing resin composition layer engage with the 1st interarea of insulated substrate, by the vacuum laminated operation at insulated substrate of the 1st adhesive film, wherein, described insulated substrate has the 1st and the 2nd interarea, be formed with the chamber between the through 1st and the 2nd interarea, the 1st hot curing resin composition layer that described 1st adhesive film comprises the 1st supporting mass and engages with the 1st supporting mass;

(B2) parts are assemblied in temporarily the operation of the 1st hot curing resin composition layer in chamber;

(C2) in the mode making the 2nd hot curing resin composition layer engage with the 2nd interarea of insulated substrate, by the operation of vacuum laminated for the 2nd adhesive film the 2nd interarea at insulated substrate, carry out vacuum laminated under the condition that heating-up temperature on the 1st adhesive film surface is lower than the heating-up temperature on the 2nd adhesive film surface, wherein, described 2nd adhesive film the 2nd hot curing resin composition layer that comprises the 2nd supporting mass and engage with the 2nd supporting mass;

(D2) make the 1st and the 2nd hot curing resin composition layer hot curing and form the operation of insulating barrier.

Operation (A2) in 2nd execution mode of the present invention, (B2), (C2) and (D2), except using insulated substrate as except the internal substrate this point of build-in components, distinguish corresponding with the operation (A1) in the 1st execution mode of the present invention, (B1), (C1) and (D1) substantially.Can reach too in the operation (A2) of of the present invention favourable effect in the method for the 2nd execution mode of the present invention that operation (A1) in the method for the 1st execution mode of the present invention, (B1), (C1) and (D1) are described, (B2), (C2) and (D2).In addition, to the of the present invention favourable effect that the operation (A2) in the method for the 2nd execution mode of the present invention, (B2), (C2) and (D2) are described, can reach too in the operation (A1) in the method for the 1st execution mode of the present invention, (B1), (C1) and (D1).

Below, with reference to Fig. 5 A to Fig. 5 G, while be described each operation of the method for the 2nd execution mode of the present invention.

-operation (A2)-

In operation (A2), in the mode making the 1st hot curing resin composition layer 102 engage with the 1st interarea of insulated substrate, be formed with the insulated substrate 21 ' (Fig. 5 A) in chamber by vacuum laminated for the 1st adhesive film 100.

Be formed with the structure of the insulated substrate 21 ' in chamber and the 1st adhesive film 100 as previously mentioned.

About the 1st adhesive film 100 to insulated substrate 21 ' vacuum laminated being formed with chamber, can implement under the order same with the operation (A1) in the method for the 1st execution mode of the present invention, condition.

In such operation (A2), the 1st hot curing resin composition layer 102 engages (Fig. 5 B) with the 1st interarea of the insulated substrate 21 ' being formed with chamber.Now, the 1st hot curing resin composition layer 102 is also filled into the region (Fig. 5 B) of the part in the chamber 21a of insulated substrate.

In operation (A2), the height h in the chamber of the insulated substrate preferably before vacuum laminated 1st adhesive film _athe height h of the non-resin fill area in the chamber of the insulated substrate after (Fig. 5 A) and vacuum laminated 1st adhesive film _b(Fig. 5 B) meets and the h be described the operation (A1) in the method for the 1st execution mode of the present invention _awith h _bthe same relation of relation.Thus, even if when using thin insulated substrate, the sufficient space for build-in components also can be guaranteed, and can the position skew of suppression component effectively.

In addition, about the 1st supporting mass, as long as make the 1st hot curing resin composition layer solidification and carry out peeling off before the operation of insulating barrier that obtains conductor layer (wiring) is arranged on, such as, both can peel off between operation described later (C2) and operation (D2), also can peel off after operation described later (D2).In a preferred embodiment, after operation described later (D2), the 1st supporting mass is peeled off.In addition, when using the metal formings such as Copper Foil as the 1st supporting mass, as described later, due to such metal forming can be used to arrange conductor layer (wiring), so the 1st supporting mass also can not be peeled off.

-operation (B2)-

In operation (B2), parts 25 are assemblied in temporarily hot curing resin composition layer 102(Fig. 5 C of the 1st in the 21a of chamber).That is, parts 25 are assemblied in temporarily the 1st hot curing resin composition layer 102 exposed in the 21a of chamber.Parts 25 can be made identical with the parts 15 be described the method for the 1st execution mode of the present invention.

Preferably implement operation (B2) in a heated condition, under these circumstances, heating condition (pressure etc. when heating-up temperature, heating time, heating) can be set to identical with the operation (B1) in the method for the 1st execution mode of the present invention.In addition, the preferred value of the warpage of the substrate obtained in operation (B2) and method of measurement thereof are as being described in the operation (B1) in the method to the 1st execution mode of the present invention.

The operation of preferably carrying out heating the 1st hot curing resin composition layer after operation (B2) (operation (B2 ')).The condition of operation (B2 ') can be set to identical with the operation (B1 ') in the method for the 1st execution mode of the present invention.

When implementing operation (B2) in a heated condition, after operation (B2), both can be transferred directly to operation (B2 '), also can transfer to operation (B2 ') after substrate being cooled to normal temperature (room temperature).

-operation (C2)-

In operation (C2), in the mode making the 2nd hot curing resin composition layer 202 engage with the 2nd interarea of insulated substrate, by vacuum laminated for the 2nd adhesive film 200 the 2nd interarea (Fig. 5 D) at insulated substrate.

In such operation (C2), the 2nd hot curing resin composition layer 202 is filled in the 21a of chamber, and the parts 25 be temporarily assemblied in the 21a of chamber are embedded to the 2nd hot curing resin composition layer 202(Fig. 5 E).

According to the viewpoint that the position of suppression component offsets, it is important for implementing operation (C2) under the condition that the heating-up temperature on the 1st adhesive film surface is lower than the heating-up temperature on the 2nd adhesive film surface.

About condition (the heating-up temperature T on the 1st adhesive film surface of operation (C2) ₁the heating-up temperature T on (DEG C) and the 2nd adhesive film surface ₂the preferred relation of (DEG C), T ₁preferred scope, T ₂preferred scope, the pumpdown time, the 1st hot curing resin composition melt viscosity etc.), can be set to identical with the operation (C1) in the method for the 1st execution mode of the present invention.

The structure of the 2nd adhesive film 200 as previously mentioned.In addition, the 2nd supporting mass 201 of the 2nd adhesive film 200 used in operation (C2) both can be identical with the 1st supporting mass 101 of the 1st adhesive film 100 used in operation (A2), also can be different.In addition, the resin combination for the 2nd hot curing resin composition layer 202 used in operation (C2) both can be identical with the resin combination for the 1st hot curing resin composition layer in operation (A2), also can be different.

The hot curing resin composition layer of insulating barrier was become afterwards (namely according to use, 1st hot curing resin composition layer) as the method for the 2nd execution mode of the present invention of the interim fabricated material of parts, even if when the miniaturization in order to reach parts internally-arranged type substrate, slimming and the insulated substrate using insulated substrate that chamber density is high, thickness thin, also can suppress the generation of substrate warp.Therefore, when not to when causing obstacle from the substrate transmission of operation (B2) to operation (C2), operation (C2) can successfully be implemented.And then, implement in the method for the 2nd execution mode of the present invention of operation (C2) under above-mentioned specific temperature conditions, can also suppress and offset with the position of the vacuum laminated parts accompanied of operation (C2), the parts internally-arranged type substrate that the configuration precision of parts is outstanding can be realized with good rate of finished products.

In a preferred embodiment, the method for the 2nd execution mode of the present invention comprises by heating and mould pressing the operation of face smoothingization of the face of the 1st adhesive film side and the 2nd adhesive film side (operation (C2 ') between operation (C2) and operation (D2)).The condition of operation (C2 ') can be set to identical with the operation (C1 ') in the method for the 1st execution mode of the present invention.

In a preferred execution mode, operation (C2) (and operation (C2 ')) in, the position undermigration of parts 40 μm.Definition and the method for measurement of the position skew of parts and the operation (C1) (and operation (C1 ') in the method to the 1st execution mode of the present invention) definition that is described is identical with method of measurement.

In addition, about the 2nd supporting mass, as long as make the 2nd hot curing resin composition layer solidification and carry out peeling off before the operation of insulating barrier that obtains conductor layer (wiring) is arranged on, such as, both can peel off between operation (C2) and operation described later (D2), also can peel off after operation described later (D2).In a preferred execution mode, after operation described later (D2), peel off the 2nd supporting mass.In addition, when using the metal formings such as Copper Foil as the 2nd supporting mass, as described later, due to such metal forming can be used to arrange conductor layer (wiring), so the 2nd supporting mass also can not be peeled off.

-operation (D2)-

In operation (D2), the 1st and the 2nd hot curing resin composition layer is made to carry out hot curing and form insulating barrier.Thus, the 1st hot curing resin composition layer 102 forms insulating barrier 102 ', and the 2nd hot curing resin composition layer 202 forms insulating barrier 202 ' (Fig. 5 F).

The condition of the hot curing in operation (D2) (pressure when curing temperature, curing time, solidification, whether carry out preheating and condition, solidification time the configuration condition etc. of substrate) can be set to identical with the operation (D1) in the method for the 1st execution mode of the present invention.

As previously mentioned, preferably after operation (D2), the 1st and the 2nd supporting mass is peeled off.Thus, in operation (D2), preferably under with the state of the 1st and the 2nd supporting mass, make the 1st and the 2nd hot curing resin composition layer carry out hot curing.Thus, the insulating barrier on the surface with low roughness can be obtained.

In a preferred execution mode, can implement to make insulated substrate be cooled to the process of normal temperature (room temperature) between operation (C2) and operation (D2).

In addition, in the following description, sometimes the substrate obtained in operation (D2) is called " parts internally-arranged type insulated substrate ".

-other operation-

The method of the 2nd execution mode of the present invention still can comprise (E2) and carry out the operation that the operation of perforate and (F2) form conductor layer on the insulating layer.These operations (E2) and (F2) can according to use in the manufacture of printed wiring board, to those skilled in the art well-known various method implement, such as, can implement in the same manner as the operation (E1) that the method for the 1st execution mode is described and (F1).In a preferred execution mode, operation (E2) comprises formation through hole.

By these operations, also be formed with conductor (wiring) in the holes such as through hole, be arranged on the wiring 23 on the surface of the 1st insulating barrier 102 ', the be arranged on wiring 23 on the surface of the 2nd insulating barrier 202 ' and parts 25 carry out being electrically connected and obtaining parts internally-arranged type substrate 2000(Fig. 5 G).As long as can provide electrical connection, the inside in the holes such as through hole just need not be filled with conductor, also can form the thin layer of conductor in the mode of the wall applying hole.。

In the method for the 2nd execution mode of the present invention, can on the insulating barrier that surface roughness is low, form small conductor (wiring) by plating and manufacture two-layer wiring substrate (value about surface roughness will be carried out aftermentioned).Insulated substrate is built in conjunction with by parts, the method of the 2nd execution mode of the present invention can make the lift-launch amount of parts increase while carry out small wiring, compared with two-layer wiring substrate in the past, high function and small-sized two-layer wiring substrate (hereinafter also referred to as " parts internally-arranged type two-layer wiring substrate ") significantly can be realized.

In addition, the method for the 2nd execution mode of the present invention can also comprise the operation that (G2) makes a parts internally-arranged type substrate sheet.Operation (G2) can be implemented in the same manner as the operation (G1) in the method for the 1st execution mode of the present invention.

Above, although being preferred embodiment illustrated the method for the 2nd execution mode of the present invention in conjunction with manufacture component internally-arranged type 2 layers of circuit board, but, as long as each operation of each operation and operation (A2) to (D2) that comprise above-mentioned operation (A2) to (D2) is implemented in this order, the method for the 2nd execution mode of the present invention is just not limited at the above-mentioned execution mode specifically illustrated.Such as, also after enforcement operation (A2) to (D2), can repeat form the operation (that is, above-mentioned operation (F2)) of conductor layer and form the operation of insulating barrier, manufacture the parts internally-arranged type circuit board with multilayer wiring.The operation forming insulating barrier can be implemented according to arbitrary method during former well-known manufacture printed wiring board, such as, can implement by the method identical with (D2) with above-mentioned operation (C2).In addition, operation (G2) can be carried out between operation (C2) and operation (D2), between operation (D2) and operation (E2) or between operation (E2) and operation (F2).In the method for the 2nd execution mode of the present invention, many variation can be considered.

[parts internally-arranged type insulated substrate]

In the past, when manufacture component internally-arranged type circuit board, the general circuit substrate that uses is as internal substrate.On the other hand, in the method for the 2nd execution mode of the present invention, parts are made to be built in insulated substrate and manufacture component internally-arranged type circuit board.Below, in the method for the 2nd execution mode of the present invention, the parts internally-arranged type insulated substrate obtained in operation (D2) is described.

Parts internally-arranged type insulated substrate, is characterized in that, comprising:

Insulated substrate, has the 1st and the 2nd interarea, is formed with the chamber between the through 1st and the 2nd interarea;

1st insulating barrier, engages with the 1st interarea of insulated substrate;

2nd insulating barrier, engages with the 2nd interarea of insulated substrate; And

Parts, are arranged on the 1st insulating barrier in the mode of the inside being housed in the chamber of insulated substrate,

2nd insulating barrier fills the chamber of insulated substrate in the mode imbedded by parts.

About be formed chamber insulated substrate, for the formation of the hot curing resin composition of the 1st and the 2nd insulating barrier and parts, as previously mentioned.

1st insulating barrier and the 2nd insulating barrier both can be mutually different compositions, also can be identical compositions.Under the 1st insulating barrier and the 2nd insulating barrier have the situations such as identical composition, the 1st insulating barrier and the 2nd insulating barrier clear and definite interface can not be shown and continuity carry out integration.

According to the viewpoint of the slimming of parts internally-arranged type circuit board, about the thickness of parts internally-arranged type insulated substrate, more preferably thin, be preferably less than 400 μm, be more preferably less than 300 μm, be more preferably less than 200 μm, be more preferably less than 150 μm, be particularly preferably less than 100 μm.Although the lower limit of the thickness of parts internally-arranged type insulated substrate is not particularly limited, generally can be set to more than 30 μm, more than 50 μm or more than 80 μm.

In parts internally-arranged type insulated substrate, the spacing between parts is corresponding with the spacing between aforesaid chamber 21a.In detail, the spacing between the parts in preferred components internally-arranged type insulated substrate is below 10mm, is more preferably below 9mm, is more preferably below 8mm, be more preferably below 7mm, be particularly preferably below 6mm.The lower limit of the spacing between parts normally more than 1mm, 2mm with first-class.Spacing between parts, also can be different without the need to identical throughout parts internally-arranged type insulated substrate.

By forming hole, the conductor layers such as through hole at parts internally-arranged type insulated substrate, thus the parts internally-arranged type circuit boards such as energy manufacture component internally-arranged type two-layer wiring substrate.

According to the viewpoint of small wiring, about parts internally-arranged type insulated substrate, the arithmetic average roughness Ra on the surface after preferred roughening treatment is below 350nm, be more preferably below 300nm, be more preferably below 250nm, be more preferably below 200nm, be particularly preferably below 180nm, below 160nm, below 140nm, below 120nm, below 100nm or below 80nm.Although the lower limit of arithmetic average roughness Ra is not particularly limited, become 20nm, 40nm etc.

In addition, arithmetic average roughness Ra can use non-contact type surface roughness meter to measure.As the object lesson of non-contact type surface roughness meter, " the WYKO NT3300 " of Veeco Instruments can be enumerated.

[parts internally-arranged type two-layer wiring substrate]

In the method for the 2nd execution mode of the present invention, can preferably manufacture component internally-arranged type two-layer wiring substrate.

In one embodiment, parts internally-arranged type two-layer wiring substrate comprises:

1st and the 2nd conductor layer;

Parts internally-arranged type insulated substrate, engages with the 1st and the 2nd conductor layer and is arranged between the 1st and the 2nd conductor layer; And

Interlayer connector, is electrically connected the 1st and the 2nd conductor layer.

Conductor layer and parts internally-arranged type insulated substrate are as previously mentioned.

About interlayer connector, as long as can be electrically connected the 1st and the 2nd conductor layer, be just not particularly limited, such as, can enumerate fill conductor in through-holes and formed connector, at the thin layer of the wall coated conductor of through hole the connector that formed.

In the method for the 2nd execution mode of the present invention, owing to forming conductor layer by plating on the insulating barrier that surface roughness is low, so the parts internally-arranged type two-layer wiring substrate with small wiring can be obtained.Such as, the parts internally-arranged type two-layer wiring substrate that there is line/interval ratio (L/S ratio) and be preferably less than 50/50 μm, be more preferably less than 40/40 μm, be more preferably the small wiring of less than 30/30 μm can be formed with good rate of finished products, and then, even have the parts internally-arranged type two-layer wiring substrate that L/S ratio is preferably the small wiring of less than 20/20 μm, less than 10/10 μm, less than 7/7 μm, also can be formed with good rate of finished products.

[semiconductor device]

The parts internally-arranged type circuit board manufactured by method of the present invention can be used to manufacture semiconductor device.

As such semiconductor device, can enumerate and be supplied to electric product (such as, computer, portable phone, digital camera and TV etc.) and the various semiconductor devices of the vehicles (such as, automotive bicycle, automobile, electric car, boats and ships and aircraft etc.) etc.

[embodiment]

Below, although specifically describe the present invention by embodiment, the present invention is not limited to these embodiments.In addition, in following record, unless otherwise specified, " part " and " % " just means " mass parts " and " quality % " respectively.

First, various method of measurement, evaluation method are described.

[modulation 1 of measurement, sample for evaluation]

(1-1) preparation of the circuit substrate in chamber is formed

In size be 340mm × 510mm internal layer circuit substrate (residual copper rate 70%) on, the chamber that the size between the 1st and the 2nd interarea having made this internal layer circuit substrate through with 5mm spacing is 0.8mm × 1.2mm.As internal layer circuit substrate, (thickness of the Copper Foil of one side is 12 μm, thickness (the height h in=chamber of substrate to employ the glass cloth base material epoxy resin double-sided copper-clad laminated board being formed with internal layer circuit _a) be 100 μm, full integral thickness is 124 μm, the thermal coefficient of expansion of substrate is 7ppm, the glass transition temperature of substrate is 230 DEG C, Mitsubishi Gas Chemical (strain) system " 832NSR-LC ").Next, use MEC(strain) system " CZ8100 " to be formed chamber internal layer circuit substrate two facet etch 1 μm and carry out the roughening treatment on copper surface.The substrate obtained is called " substrate a1 ".

(1-2) the 1st adhesive film is vacuum laminated

Diaphragm is peeled off from the 1st adhesive film made following production example.After this, use intermittent vacuum pressure level press ((strain) name mechanism is done made " MVLP-500 "), the mode connected with the 1st interarea of circuit substrate to make the 1st hot curing resin composition layer by vacuum laminated for the 1st adhesive film at substrate a1.The 1st adhesive film vacuum laminated in, decompression 30 seconds (namely, pumpdown time is 30 seconds) make after air pressure is below 13hPa, under the temperature (" operation (A) ") shown in following table 2-1, pressure 0.5MPa, thermo-compressed is added 30 seconds via heat resistant rubber from the 1st supporting mass, thus, lamination treatment is carried out.The substrate obtained is called " substrate b1 ".This operation is equivalent to operation (A) (in detail, being operation (A1)).

(1-3) the interim assembling of parts

After this, under the condition (" operation (B) ") shown in table 2-1, parts ((strain) Murata Manufacturing Co. Ltd. preparative layer laminate film capacitor 1005, size is 1.0mm × 0.5mm, and thickness is 180 μm) are assemblied on the 1st hot curing resin composition layer in the chamber of substrate b1 temporarily.This operation is equivalent to operation (B) (in detail, being operation (B1)).

In addition, about embodiment 1-3,1-4 and comparative example 1-2, after interim build-up member, the condition (" operation (B ') shown in table 2-1 ") under, further heat treated is carried out to the 1st hot curing resin composition layer.This operation is equivalent to operation (B1 ').

The substrate obtained is called " substrate c1 ".

(1-4) the 2nd adhesive film is vacuum laminated

Diaphragm is peeled off from the 2nd adhesive film made following production example.After this, use intermittent vacuum pressure level press ((strain) name mechanism is done made " MVLP-500 "), the mode connected with the 2nd interarea of circuit substrate to make the 2nd hot curing resin composition layer by vacuum laminated for the 2nd adhesive film at substrate c1.The 2nd adhesive film vacuum laminated in, make after air pressure is below 13hPa, by the heating-up temperature (T on the 1st adhesive film surface in decompression 30 seconds (that is, the pumpdown time is 30 seconds) ₁) and the heating-up temperature (T on the 2nd adhesive film surface ₂) be set as the value (" operation (C) ") of following table shown in 2-1, under pressure 0.74MPa, add thermo-compressed 30 seconds via heat resistant rubber, thus carry out lamination treatment.This operation is equivalent to operation (C) (in detail, being operation (C1)).

And then, at ambient pressure, under pressure 0.5MPa, utilize SUS runner plate to carry out heating and mould pressing 60 seconds, thus, to the two sides smoothingization process of substrate.The temperature conditions of smoothing techniques is identical with lamination treatment condition.The substrate obtained is called " substrate d1 ".This operation is equivalent to operation (C1 ').

(1-5) hot curing of the 1st and the 2nd hot curing resin composition layer

The supporting mass the 1st and the 2nd adhesive film is peeled off from substrate d1.After this, at ambient pressure, at 100 DEG C, 30 minutes are heated to substrate d1, next at 180 DEG C, 30 minutes are heated to substrate d1, thus make the 1st and the 2nd hot curing resin composition layer hot curing.Substrate is set to level to implement hot curing.Thus, insulating barrier is formed on the two sides of internal layer circuit substrate.This operation is equivalent to operation (D) (in detail, being operation (D1)).

[modulation 2 of measurement, sample for evaluation]

(2-1) preparation of the insulated substrate in chamber is formed

In size be 340mm × 510mm insulated substrate on, the chamber that is 0.8mm × 1.2mm of the size between the 1st and the 2nd interarea making this insulated substrate through with 5mm spacing.As insulated substrate, employ fiberglass substrate epoxy resin two sides copper-clad laminated board that (thickness of the Copper Foil of one side is 12 μm, thickness (the height h in=chamber of substrate (fiberglass substrate-epoxy resin solidification prepreg) _a) be 100 μm, integral thickness is 124 μm, the thermal coefficient of expansion of substrate is 7ppm, the glass transition temperature of substrate is 230 DEG C, Mitsubishi Gas Chemical (strain) system " 832NSR-LC ") the substrate that all removes of two sides Copper Foil.The substrate obtained is called " substrate a2 ".

(2-2) the 1st adhesive film is vacuum laminated

Diaphragm is peeled off from the 1st adhesive film made following production example.After this, use intermittent vacuum pressure level press ((strain) name mechanism is done made " MVLP-500 "), the mode connected with the 1st interarea of circuit substrate to make the 1st hot curing resin composition layer by vacuum laminated for the 1st adhesive film at substrate a2.The 1st adhesive film vacuum laminated in, decompression 30 seconds (namely, pumpdown time is 30 seconds) make after air pressure is below 13hPa, carry out adding thermo-compressed 30 seconds via heat resistant rubber under the temperature (" operation (A) ") shown in following table 2-2, pressure 0.5MPa from the 1st supporting mass, carry out lamination treatment thus.The substrate obtained is called " substrate b2 ".This operation is equivalent to operation (A) (in detail, being operation (A2)).

(2-3) the interim assembling of parts

After this, in the condition (" operation (B) ") shown in table 2-2, parts ((strain) Murata Manufacturing Co. Ltd. preparative layer laminate film capacitor 1005, size is 1.0mm × 0.5mm, and thickness is 180 μm) are assemblied on the 1st hot curing resin composition layer in chamber temporarily.This operation is equivalent to operation (B) (in detail, being operation (B2)).

In addition, about embodiment 2-3 and 2-4, after interim build-up member, the condition (" operation (B ') shown in table 2-2 ") under, further heat treated is carried out to the 1st hot curing resin composition layer.The substrate obtained is called " substrate c2 ".This operation is equivalent to operation (B2 ').

(2-4) the 2nd adhesive film is vacuum laminated

Diaphragm is peeled off from the 2nd adhesive film made following production example.After this, intermittent vacuum pressure level press ((strain) name mechanism is done made " MVLP-500 ") is used, in the mode making the 2nd hot curing resin composition layer connect with the 2nd interarea of circuit substrate, by vacuum laminated for the 2nd adhesive film at substrate c2.The 2nd adhesive film vacuum laminated in, make after air pressure is below 13hPa, by the heating-up temperature (T on the 1st adhesive film surface in decompression 30 seconds (that is, the pumpdown time is 30 seconds) ₁) and the heating-up temperature (T on the 2nd adhesive film surface ₂) be set as the value (" operation (C) ") of following table shown in 2-2, carry out adding thermo-compressed 30 seconds via heat resistant rubber under pressure 0.74MPa, carry out lamination treatment thus.This operation is equivalent to operation (C) (in detail, being operation (C2)).

And then, at ambient pressure, under pressure 0.5MPa, utilize SUS runner plate to carry out heating and mould pressing 60 seconds, thus, to the two sides smoothingization process of substrate.The temperature conditions of smoothing techniques is identical with lamination treatment condition.The substrate obtained is called " substrate d2 ".This operation is equivalent to operation (C2 ').

(2-5) hot curing of the 1st and the 2nd hot curing resin composition layer

The supporting mass the 1st and the 2nd adhesive film is peeled off from substrate d2.After this, at ambient pressure, at 100 DEG C, 30 minutes are heated to substrate d2, next at 180 DEG C, 30 minutes are heated to substrate d2, make the 1st and the 2nd hot curing resin composition layer hot curing.Substrate is set to level to implement hot curing.Thus, insulating barrier is formed on the two sides of insulated substrate.This operation is equivalent to operation (D) (in detail, being operation (D2)).

Height (the h of the non-resin fill area in < chamber _b) measurement >

Microscope (keyence system " VH-5500 ") is used to measure the height (h of the non-resin fill area in chamber to substrate b1 and b2 _b).

The measurement > of the melt viscosity of the 1st hot curing resin composition layer in the vacuum laminated operation of < the 2nd adhesive film

Dynamic viscoelastic measurement mechanism ((strain) UBM Inc. " Rheosol-G3000 ") is used to measure melt viscosity to the 1st hot curing resin composition layer in the 1st adhesive film made in following production example.At the T using the parallel-plate of diameter 18mm shown in table 2-1 or table 2-2 ₁after sample tree oil/fat composition 1g being kept 1 minute under (DEG C), under the measuring condition of vibration 1Hz, distortion 1deg, measure dynamic viscoelastic rate, calculate melt viscosity (poise).In addition, sample tree oil/fat composition to experienced by before melt viscosity and shows 2-1 or show the operation (A) shown in 2-2, operation (B) (as required, operation (B ') measuring) same thermal history.

The evaluation > of < substrate warp

About the evaluation of substrate warp, substrate c1 and c2 is used to implement as illustrated in fig. 6.In detail, under room temperature (23 DEG C), with 50 in setting tool 31 fixing base c1 or c2(Fig. 6) (CD limit), sling in vertical direction relative to ground (horizontal plane).At this, assuming that comprise the face perpendicular to ground on the CD limit of substrate c1 or c2, it can be used as vertical plane (30 in Fig. 6).Then, the both ends of opposite side (AB limit) apart from vertical plane 30 and the vertical height (H of side a and b is measured _aand H _b), obtain its mean value ((H _a+ H _b)/2).Then, substrate warp is evaluated based on following benchmark.In addition, when the mean value in this evaluation is larger than 25mm, easily produce bad to substrate transmission in the vacuum laminated operation of the 2nd adhesive film.

Metewand:

Zero: mean value is at below 25mm;

×: mean value is larger than 25mm.

The evaluation > of the position skew of < parts

The change of the component locations of the stacked front and back of the 2nd adhesive film is measured with light microscope (keyence system " VH-5500 ").About measurement, it is the change of the position of this object Part measured between substrate c1 and substrate d1 or between substrate c2 and substrate d2.In addition, in this evaluation, using the center of parts as datum mark, measure the change in location (μm) of this datum mark.Then, the position skew of parts is evaluated based on following metewand.

Metewand:

Zero: change in location is less than 40 μm;

×: change in location is more than 40 μm.

[production example 1]

(1) (modulation of resin varnish 1)

In the mixed solvent of MEK 15 parts and cyclohexanone 15 parts, stirring is carried out while make its heating for dissolving to bisphenol A type epoxy resin (epoxide equivalent 180, Mitsubishi Chemical's (strain) system " jER828EL ") 28 parts, naphthalene type 4 functional epoxy resins (epoxide equivalent 163, large Japanese Ink chemical industry (strain) system " HP4700 ") 28 parts and phenoxy resin (the MEK solution that Mitsubishi Chemical's (strain) makes " YX6954BH30 ", solid state component is 30%) 20 parts.(hydroxyl equivalent is 125 to the phenol novolacs of mixing containing triazine skeleton wherein, DIC(strain) system " LA7054 ", solid state component is the MEK solution of 60%, the amount of nitrogen is approximately 12 % by weight) 27 parts, (hydroxyl equivalent is 215 to naphthols system curing agent, aurification (strain) system " SN-485 " is lived by Nippon Steel, solid state component is the MEK solution of 50 % by weight) 27 parts, (four countries change into industry (strain) system to imidazoles system curing accelerator, " 2E4MZ ") 0.1 part, fire retardant (three light (strain) system " HCA-HQ ", 10-(2, 5-dihydroxy phenol)-10-hydrogen-9-oxa--10-phospho hetero phenanthrene-10-oxide, average grain diameter is 2 μm) 5 parts, surface-treated preparing spherical SiO 2 (average grain diameter 0.5 μm is carried out with amino silicone methane series coupling agent (SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 "), (strain) ADMATECHS system " SOC2 ") 140 parts, and polyvinyl butyral resin (ponding chemical industry (strain) system " KS-1 ", solid state component is the ethanol of 15 % by weight and the 1:1 solution of toluene) 30 parts, disperse equably with High Rotation Speed blender, make resin varnish 1.

When the total of the nonvolatile component in resin varnish 1 is set to 100 quality %, the amount of inorganic filling material (preparing spherical SiO 2) is approximately 58 quality %.

The making of (2) the 1st adhesive films 1

Prepare the PET film (LINTEC(strain) system " AL5 " of subsidiary alkyd resins system release layer, thickness is 38 μm) as supporting mass.With dip coater, the resin varnish 1 of above-mentioned modulation is coated in equably the release layer side surface of this supporting mass, under 80 DEG C ~ 120 DEG C (average 100 DEG C) dry 5 minutes and form the 1st hot curing resin composition layer.The thickness of the 1st hot curing resin composition layer is 25 μm.Next, in the even surface side of the surface of hot curing resin composition layer laminating polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μm) as diaphragm, modulation the 1st adhesive film 1.

The making of (3) the 2nd adhesive films 1

Prepare the PET film (LINTEC(strain) system " AL5 " of subsidiary alkyd resins system release layer, thickness is 38 μm) as supporting mass.With dip coater, the resin varnish 1 of above-mentioned modulation is coated in equably the release layer side surface of this supporting mass, under 80 DEG C ~ 120 DEG C (average 100 DEG C) dry 4 minutes and form the 2nd hot curing resin composition layer.The thickness of the 2nd hot curing resin composition layer is 30 μm.Next, in the even surface side of the surface of hot curing resin composition layer laminating polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μm) as diaphragm, modulation the 2nd adhesive film 1.

[production example 2]

(1) modulation of resin varnish 2

In solvent naphtha (solvent naphtha) 25 parts, while to hexichol phenol-type epoxy resin, (aurification (strain) system " ZX1059 " is lived by Nippon Steel, the 1:1 melange of bisphenol A-type and bisphenol-f type, epoxide equivalent is approximately 169) 5 parts, naphthalene type epoxy resin (DIC(strain) system " HP4032SS ", epoxide equivalent is approximately 144) 5 parts, bis-xylene phenol-type epoxy resin (Mitsubishi Chemical's (strain) system " YX4000HK ", epoxide equivalent is approximately 185) 5 parts, biphenyl type epoxy resin (Japanese chemical drug (strain) system " NC3000H ", epoxide equivalent is approximately 288) 15 parts and phenoxy resin (Mitsubishi Chemical's (strain) system " YL7553BH30 ", weight average molecular weight is approximately 35000, solid state component is the MEK solution of 30%) 10 parts carry out stirring while make its heating for dissolving.After cooling to room-temperature, the phenol novolac system curing agent (DIC(strain) system " LA-7054 " of mixing containing triazine skeleton wherein, hydroxy equivalent is 125, solid state component is the MEK solution of 60%) 10 parts, (aurification (strain) system " SN-485 " is lived to naphthols system curing agent by Nippon Steel, hydroxy equivalent is 215, solid state component is the MEK solution of 60%) 10 parts, curing accelerator (4-Dimethylaminopyrimidine (DMAP), solid state component is the MEK solution of 5 quality %) 1 part, fire retardant (three light (strain) system " HCA-HQ ", 10-(2, 5-dihydroxy phenol)-10-hydrogen-9-oxa--10-phospho hetero phenanthrene-10-oxide, average grain diameter is 2 μm) 3 parts, surface-treated preparing spherical SiO 2 ((strain) ADMATECHS system " SOC2 " is carried out with amino silicone methane series coupling agent (SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 "), average grain diameter is 0.5 μm, the average carbon amounts of per surface area is 0.39mg/m ²) 130 parts, carry out equably disperseing with High Rotation Speed blender and modulate resin varnish 2.

When the total of the nonvolatile component in resin varnish 2 is set to 100 quality %, the amount of inorganic filling material (preparing spherical SiO 2) is approximately 73 quality %.

The making of (2) the 1st adhesive films 2

Prepare the PET film (LINTEC(strain) system " AL5 " of subsidiary alkyd resins system release layer, thickness is 38 μm) as supporting mass.With dip coater, the resin varnish 2 of above-mentioned modulation is coated in equably the release layer side surface of this supporting mass, under 80 DEG C ~ 120 DEG C (average 100 DEG C) dry 5 minutes and form the 1st hot curing resin composition layer.The thickness of the 1st hot curing resin composition layer is 30 μm.Next, in the even surface side of the surface of hot curing resin composition layer laminating polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μm) as diaphragm, modulation the 1st adhesive film 2.

The making of (3) the 2nd adhesive films 2

Prepare the PET film (LINTEC(strain) system " AL5 " of subsidiary alkyd resins system release layer, thickness is 38 μm) as supporting mass.With dip coater, the resin varnish 2 of above-mentioned modulation is coated in equably the release layer side surface of this supporting mass, under 80 DEG C ~ 120 DEG C (average 100 DEG C) dry 4 minutes and form the 2nd hot curing resin composition layer.The thickness of the 2nd hot curing resin composition layer is 50 μm.Next, in the even surface side of the surface of hot curing resin composition layer laminating polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μm) as diaphragm, modulation the 2nd adhesive film 2.

[table 1]

< embodiment 1-1>

Use the 1st adhesive film 1 and the 2nd adhesive film 1, manufacture substrate a1 to d1 according to the order of above-mentioned [modulation 1 of measurement, sample for evaluation].Each evaluation result is shown in 2-1.In addition, about the substrate b1 obtained, the height (h of the non-resin fill area in chamber _b) be 97 μm.

< embodiment 1-2>

Use the 1st adhesive film 2 and the 2nd adhesive film 2, manufacture substrate a1 to d1 according to the order of above-mentioned [modulation 1 of measurement, sample for evaluation].Each evaluation result is shown in 2-1.In addition, about the substrate b1 obtained, the height (h of the non-resin fill area in chamber _b) be 95 μm.

< embodiment 1-3>

< embodiment 1-4>

< embodiment 1-5>

Except changing to except 60 seconds by pumpdown time during vacuum laminated 2nd adhesive film from 30 seconds, manufacture substrate a1 to d1 in the same manner as embodiment 1-1.Each evaluation result is shown in 2-1.In addition, about the substrate b1 obtained, the height (h of the non-resin fill area in chamber _b) be 97 μm.

< comparative example 1-1>

[table 2-1]

< embodiment 2-1>

Use the 1st adhesive film 1 and the 2nd adhesive film 1, manufacture substrate a2 to d2 according to the order of above-mentioned [modulation 2 of measurement, sample for evaluation].Each evaluation result is shown in 2-2.In addition, about the substrate b2 obtained, the height (h of the non-resin fill area in chamber _b) be 97 μm.

< embodiment 2-2>

Use the 1st adhesive film 2 and the 2nd adhesive film 2, manufacture substrate a2 to d2 according to the order of above-mentioned [modulation 2 of measurement, sample for evaluation].Each evaluation result is shown in 2-2.In addition, about the substrate b2 obtained, the height (h of the non-resin fill area in chamber _b) be 95 μm.

< embodiment 2-3>

< embodiment 2-4>

Use the 1st adhesive film 1 and the 2nd adhesive film 1, manufacture substrate a2 to d2 according to the order of above-mentioned [modulation 2 of measurement, sample for evaluation].Each evaluation result is shown in 2-2.In addition, about the substrate b2 obtained, the height (h of the non-resin fill area in chamber _b) be 98 μm.

< embodiment 2-5>

Except changing to except 60 seconds by pumpdown time during vacuum laminated 2nd adhesive film from 30 seconds, manufacture substrate a2 to d2 in the same manner as embodiment 2-1.Each evaluation result is shown in 2-2.In addition, about the substrate b2 obtained, the height (h of the non-resin fill area in chamber _b) be 97 μm.

< comparative example 2-1>

[table 2-2]

Description of reference numerals

11: circuit substrate;

11 ': the circuit substrate being formed with chamber;

12: substrate;

12a: chamber;

13: wiring;

15: parts;

21: insulated substrate;

21 ': the insulated substrate being formed with chamber;

21a: chamber;

23: wiring;

25: parts;

30: vertical plane;

31: setting tool;

50: substrate c1, c2;

100: the 1 adhesive films;

101: the 1 supporting masses;

102: the 1 hot curing resin composition layers;

102 ': the 1 insulating barrier;

200: the 2 adhesive films;

201: the 2 supporting masses;

202: the 2 hot curing resin composition layers;

202 ': the 2 insulating barrier;

1000: parts internally-arranged type circuit board;

2000: parts internally-arranged type substrate.

Claims

1. a manufacture method for parts internally-arranged type circuit board, comprises following operation (A), (B), (C) and (D) in order:

2. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

Internal substrate is circuit substrate.

3. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

Internal substrate is insulated substrate.

4. the manufacture method of parts internally-arranged type circuit board according to claim 3, wherein,

Insulated substrate is solidification prepreg, glass substrate or ceramic substrate.

5. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

In operation (C), the heating-up temperature on the 1st adhesive film surface is being set to T ₁the heating-up temperature on (DEG C), the 2nd adhesive film surface is set to T ₂time (DEG C), T ₁and T ₂meet T ₂-40≤T ₁≤ T ₂the relation of-10.

6. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

2nd hot curing resin composition layer is than the 1st hot curing resin composition thickness.

7. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

In operation (A), the height h in the chamber of the internal substrate before vacuum laminated 1st adhesive film _awith the height h of the non-resin fill area in the chamber of the internal substrate after vacuum laminated 1st adhesive film _bmeet 0.8h _a≤ h _b≤ h _arelation.

8. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

In operation (C), the melt viscosity of the 1st hot curing resin composition layer is more than 2000 pools.

9. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

Between operation (C) and operation (D), comprise the operation being made the face of the 1st adhesive film side and the face smoothing of the 2nd adhesive film side by heating and mould pressing.

10. the manufacture method of parts internally-arranged type circuit board according to claim 1, wherein,

In operation (D), under with the state of the 1st and the 2nd supporting mass, carry out hot curing.

The manufacture method of 11. parts internally-arranged type circuit boards according to claim 2, wherein,

The thickness of circuit substrate is 50 ~ 350 μm.

The manufacture method of 12. parts internally-arranged type circuit boards according to claim 3, wherein,

The thickness of insulated substrate is 30 ~ 350 μm.

The manufacture method of 13. parts internally-arranged type circuit boards according to claim 1, wherein,

Spacing between chamber is 1 ~ 10mm.

The manufacture method of 14. parts internally-arranged type circuit boards according to claim 1, wherein,

The amount of the inorganic filling material in the 1st hot curing resin composition layer is more than 50 quality %.

The manufacture method of 15. parts internally-arranged type circuit boards according to claim 1, wherein,

The warpage of the substrate obtained in operation (B) is at below 25mm.

The manufacture method of 16. parts internally-arranged type circuit boards according to claim 1, wherein,

Also comprise the operation that (E) carries out perforate.

The manufacture method of 17. parts internally-arranged type circuit boards according to claim 1, wherein,

Also comprise the operation that (F) forms conductor layer on the insulating layer.

The manufacture method of 18. parts internally-arranged type circuit boards according to claim 17, wherein,

Operation (F) comprising:

Roughening treatment is carried out to insulating barrier; And

Insulating barrier after alligatoring forms conductor layer by plating.

19. 1 kinds of parts internally-arranged type insulated substrates, comprising:

1st insulating barrier, engages with the 1st interarea of insulated substrate;

20. 1 kinds of parts internally-arranged type two-layer wiring substrates, comprising:

1st and the 2nd conductor layer;

Parts internally-arranged type insulated substrate according to claim 19, engages with the 1st and the 2nd conductor layer, is arranged between the 1st and the 2nd conductor layer; And

21. parts internally-arranged type two-layer wiring substrate according to claim 20, wherein,

1st and the 2nd conductor layer is formed by plating.

22. 1 kinds of semiconductor devices, comprise the parts internally-arranged type circuit board manufactured by the method described in any one of claim 1 ~ 18.