CN104241434A - Terahertz simple-spectrum signal detector based on metamaterial and manufacturing method thereof - Google Patents
Terahertz simple-spectrum signal detector based on metamaterial and manufacturing method thereof Download PDFInfo
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- CN104241434A CN104241434A CN201410455234.5A CN201410455234A CN104241434A CN 104241434 A CN104241434 A CN 104241434A CN 201410455234 A CN201410455234 A CN 201410455234A CN 104241434 A CN104241434 A CN 104241434A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002086 nanomaterial Substances 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 6
- 239000010931 gold Substances 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 1
- 230000008859 change Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012358 sourcing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a terahertz simple-spectrum signal detector based on a metamaterial. The terahertz simple-spectrum signal detector comprises a substrate layer, an N-type gallium arsenide layer, a silicon dioxide layer, a metamaterial layer, an ohmic electrode and a Schottky electrode which are sequentially arranged from bottom to top, wherein the metamaterial layer is a metal open loop resonance unit array with a periodic micro-nano structure, the metal open loop resonance unit array comprises a graph and characteristic size parameters of the graph, the graph has a characteristic of complete absorption on terahertz electromagnetic waves, corresponding electromagnetic wave absorption frequency bands can be regulated and controlled by changing the structure and the size parameters of a metal open loop resonance unit, and the electromagnetic wave absorption strength of the metal open loop resonance unit array in the metamaterial layer can be regulated and controlled by changing the depletion layer width of the N-type gallium arsenide layer. The metal open loop resonance unit in the metamaterial layer having wave length selectivity and a perfect absorption characteristic has high sensitivity and a high-speed characteristic, and the detector can work within a specific terahertz band by selecting the specific metal open loop resonance unit structure.
Description
Technical field
The invention belongs to acquisition of signal technical field, more specifically, relate to a kind of Terahertz simple spectrum signal sensor based on Meta Materials and preparation method thereof.
Background technology
Terahertz detection has in various fields such as airport security system, communication, electronic countermeasures and Non-Destructive Testings to be applied widely, and common terahertz detector mainly comprises thermal detector, schottky diode detector.
Requiring that under the occasion that high speed, high sensitivity, multispectrum signal detect, existing terahertz detector deposits problem in the following areas: 1, the spectrum imaging device of terahertz detector still needs to configure complicated driving or sweep mechanism, volume and quality large; 2, terahertz detector response speed is slower; 3, the spectrographic detection scope of terahertz detector can not be expanded easily.
Summary of the invention
For above defect or the Improvement requirement of prior art, the invention provides a kind of Terahertz simple spectrum signal sensor based on Meta Materials and preparation method thereof, its object is to, solve the technical problem that the volume existed in existing terahertz signal detector is large, low-response, spectrographic detection scope can not be expanded easily.
For achieving the above object, according to one aspect of the present invention, provide a kind of Terahertz simple spectrum signal sensor based on Meta Materials, comprise substrate layer, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode and a pair Schottky electrode, n type gaas layer is arranged at above substrate layer, silicon dioxide layer is arranged at above n type gaas layer, metamaterial layer is arranged at above n type gaas layer, Ohmic electrode is arranged at above n type gaas layer, Schottky electrode is arranged at above silicon dioxide layer, Ohmic electrode and a pair Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer is the metal level with periodically micro nano structure, metamaterial layer comprises a metal open loop resonating member array, perforate spacing t=2 ~ 8 μm of each metal open loop resonating member, live width d=4 ~ 14 μm, period L=36 ~ 100 μm.
Preferably, substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
Preferably, the material of Ohmic electrode is nickel, germanium and gold, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
Preferably, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
Preferably, metamaterial layer is made up of periodicity micro-nano metal structure, and forms Schottky contacts with n type gaas layer.
Preferably, when metamaterial layer is used for electromagnetic signal detection, cycle of the periodicity micro nano structure that it adopts is much smaller than the wavelength of respective signal.
Preferably, the material of metal open loop resonating member is titanium and gold, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
According to another aspect of the present invention, provide a kind of preparation method of the Terahertz simple spectrum signal sensor based on Meta Materials, comprise the steps:
(1) on substrate layer, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer thus;
(2) on n type gaas layer, plasma enhanced CVD legal system prepared silicon dioxide layer is passed through;
(3) on silicon dioxide layer by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Ge/Au layer be stacked successively, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer, to the Ohmic electrode annealing with this Ni/Ge/Au layer, to form Ohmic electrode;
(4) on silicon dioxide layer first by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer and the Schottky electrode with Ni/Au layer respectively, wherein metamaterial layer directly contacts with n type gaas layer, Schottky electrode is positioned on silicon dioxide layer, and the distance between Schottky electrode and metamaterial layer is 1mm ~ 1.5mm.
In general, the above technical scheme conceived by the present invention compared with prior art, can obtain following beneficial effect:
1, the Terahertz simple spectrum signal sensor volume that the present invention is based on Meta Materials is little: the making due to described Meta Materials adopts micro-nano photoetching process, can integrated thousands of metal open loop resonating member in 1mm2 size, the Terahertz simple spectrum signal sensor volume therefore based on Meta Materials is very little, very light in weight;
2, the Terahertz simple spectrum signal sensor response speed that the present invention is based on Meta Materials is very fast: because the metal open loop resonating member of metamaterial layer has the ability absorbing corresponding wave band electromagnetic signal completely, resonate once produce with corresponding THz wave segment signal, its resonance response speed belongs to ultrahigh speed response, can produce response signal in very short time.
3, the Terahertz simple spectrum signal sensor that the present invention is based on Meta Materials only needs a small amount of e-sourcings such as AC signal generator to assist it to carry out work, thus saves peripheral circuit resource.
4, the present invention by the graphic parameter of amendment metal open loop resonating member, can change the resonance frequency of metal open loop resonating member, because herein is provided a kind of ability that can change acquisition of signal wavelength according to actual needs.
Accompanying drawing explanation
Fig. 1 is the longitudinal profile schematic diagram of the Terahertz simple spectrum signal sensor that the present invention is based on Meta Materials.
Fig. 2 is the schematic top plan view of the Terahertz simple spectrum signal sensor that the present invention is based on Meta Materials.
Fig. 3 is the structural representation of metal open loop resonating member array in the metamaterial layer of the Terahertz simple spectrum signal sensor that the present invention is based on Meta Materials.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each execution mode of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
Basic ideas of the present invention are, the present invention can be corresponding according to designed metal open loop resonating member electromagentic resonance frequency, cause metal to generate heat by the electromagentic resonance of the metal open loop resonating member in metamaterial layer and change the collection of energy that metallic resistance rate realizes electromagnetic wave signal, and by external AC signal by the change detection of resistivity out, thus detection particular terahertz hereby signal.
As shown in Figure 1, the Terahertz simple spectrum signal sensor that the present invention is based on Meta Materials comprises the substrate layer 1, n type gaas layer 2, silicon dioxide layer 3, metamaterial layer 4, Ohmic electrode 5 and a pair Schottky electrode 61 and 62 that set gradually from bottom to top.Wherein, n type gaas layer 2 is arranged at above substrate layer 1, silicon dioxide layer 3 is arranged at above n type gaas layer 2, metamaterial layer 4 is arranged at above n type gaas layer 2, Ohmic electrode 5 is arranged at above n type gaas layer 2, Schottky electrode 61 and 62 is arranged at above silicon dioxide layer 3, and Ohmic electrode 5 and a pair Schottky electrode 61 and 62 are arranged at the two ends, left and right of metamaterial layer 4 respectively.
Metamaterial layer 4 is for having the metal level of periodically micro nano structure, and the metal level of described periodicity micro nano structure comprises a kind of figure and characteristic size parameter thereof, and it has complete absorption characteristic for terahertz electromagnetic wave.
Substrate layer can be selected but be not limited to semi-insulating GaAs, can also be silicon, alundum (Al2O3) etc.
The Ohmic electrode 5 of Schottky diode can be selected but be not limited to nickel, germanium, gold, and its thickness is preferably 20-30nm, 200-300nm and 20-30nm; Schottky electrode 61 and 62 can be selected but be not limited to titanium, gold, and its thickness is preferably 20-30nm and 200-250nm.
Metamaterial layer 4 is made up of periodicity micro-nano metal structure, and itself and n type gaas layer 2 form Schottky contacts, has the complete absorbent properties to terahertz electromagnetic wave, can be optimized by the size of adjustment cycle micro-nano metal structure to its service band.
When metamaterial layer 4 detects for electromagnetic signal, the cycle of the periodicity micro nano structure that metamaterial layer 4 adopts much smaller than the wavelength of respective signal, thus should meet the real work performance of sub-wavelength device.
As shown in Figure 2, metamaterial layer 4 comprises a metal open loop resonating member array 41, and wherein the resonance frequency of metal open loop resonating member array 41 corresponds to a specific Terahertz wavelength.In order to clearly show the metamaterial structure and the characteristic size parameter that work in terahertz wave band, the metal open loop resonating member array 41 in metamaterial layer 4 amplifies by the present embodiment, as shown in Figure 3.It is titanium, gold that the metal open loop resonating member of metal open loop resonating member array 41 makes material, thickness is respectively 20 ~ 30nm and 200 ~ 250nm, Schottky contacts is formed with n type gaas layer 2, when working in terahertz wave band, perforate spacing t=2 ~ 8 μm, live width d=4 ~ 14 μm, outer width L=36 ~ 100 μm, intermediate connection inclination angle theta=0 ~ 90 degree, intermediate connection length p=10 ~ 100 μm, intermediate connection width f≤d/4;
The above-mentioned metal open loop resonating member array be made up of a kind of figure is equivalent to a LC resonant circuit, after target electromagnetic ripple signal 7 impinges perpendicularly on metamaterial layer 4, electromagnetic wave with specific wavelength in terahertz wave band produces and resonates by these LC resonant circuits, absorb the energy of respective wavelength in incident electromagnetic wave 7, and then make metal open loop resonating member heating up, because metal open loop resonating member intermediate connections region is not only thin but also long, surface current during resonance through this region because the unexpected change of resistance must cause greatly temperature to raise rapidly, thus change rapidly the resistivity of metal open loop resonating member metal, by applying 2V alternating voltage on a pair Schottky electrode 61 and 62, when alternating voltage peak-to-peak value amplitude of variation exceedes setting threshold, show that this metal open loop resonating member has detected the signal of corresponding wavelength, by applying on 0 ~ 5V reverse direct current (DC) bias Xiao Yu Ohmic electrode 5, the depletion width of the metal of metamaterial layer 4 and n type gaas layer 2 contact area is increased, improve the absorption efficiency of metamaterial layer 4 pairs of incident electromagnetic waves 7, and increase the resistivity of metal open loop resonating member further, thus the alternating voltage peak-to-peak value making Schottky electrode 61 and 62 detect is more obvious, realizes the detection of Terahertz simple spectrum signal.
The preparation method that the present invention is based on the Terahertz simple spectrum signal sensor of Meta Materials comprises the steps:
(1) on substrate layer 1, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer 2 thus, its thickness is 1um ~ 2um;
(2) on n type gaas layer 2, pass through plasma enhanced CVD legal system prepared silicon dioxide layer 3, its thickness is 300nm ~ 400nm;
(3) on silicon dioxide layer 3 by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm) adopting the mode of electron beam evaporation to evaporate successively to be again stacked, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm), after the Ohmic electrode with this Ni/Ge/Au layer is annealed, form Ohmic electrode 5,
(4) on silicon dioxide layer 3 first by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer 3, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer (its thickness is respectively 200-250nm/20-30nm) be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer 4 and the Schottky electrode 6 with Ni/Au layer (its thickness is respectively 200nm/20nm) respectively, metamaterial layer 4 directly contacts with n type gaas layer 2, Schottky electrode 61 and 62 is positioned on silicon dioxide layer 3, and the distance between Schottky electrode 6 and metamaterial layer 4 is 1mm ~ 1.5mm.
Therefore, present invention employs Schottky diode structure, it is using the metal open loop resonating member array of metamaterial layer as complete light absorbing medium, causes the change of AC signal peak-to-peak value to obtain acquisition of signal ability by the change of resistivity; By above-mentioned preparation solution integration in the Schottky diode being substrate with monolithic GaAs, realize Terahertz simple spectrum signal sensor.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the Terahertz simple spectrum signal sensor based on Meta Materials, comprise substrate layer, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode and a pair Schottky electrode, it is characterized in that, n type gaas layer is arranged at above substrate layer, silicon dioxide layer is arranged at above n type gaas layer, metamaterial layer is arranged at above n type gaas layer, Ohmic electrode is arranged at above n type gaas layer, Schottky electrode is arranged at above silicon dioxide layer, Ohmic electrode and a pair Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer is the metal level with periodically micro nano structure, metamaterial layer comprises a metal open loop resonating member array, perforate spacing t=2 ~ 8 μm of each metal open loop resonating member, live width d=4 ~ 14 μm, period L=36 ~ 100 μm.
2. Terahertz simple spectrum signal sensor according to claim 1, is characterized in that, substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
3. Terahertz simple spectrum signal sensor according to claim 1, is characterized in that, the material of Ohmic electrode is nickel, germanium and gold, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
4. Terahertz simple spectrum signal sensor according to claim 1, is characterized in that, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
5. Terahertz simple spectrum signal sensor according to claim 1, is characterized in that, metamaterial layer is made up of periodicity micro-nano metal structure, and forms Schottky contacts with n type gaas layer.
6. Terahertz simple spectrum signal sensor according to claim 1, is characterized in that, when metamaterial layer is used for electromagnetic signal detection, cycle of the periodicity micro nano structure that it adopts is much smaller than the wavelength of respective signal.
7. Terahertz simple spectrum signal sensor according to claim 6, is characterized in that, the material of metal open loop resonating member is titanium and gold, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
8. a preparation method for the Terahertz simple spectrum signal sensor based on Meta Materials as claimed in any of claims 1 to 7, is characterized in that, comprise the steps:
(1) on substrate layer, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer thus;
(2) on n type gaas layer, plasma enhanced CVD legal system prepared silicon dioxide layer is passed through;
(3) on silicon dioxide layer by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Ge/Au layer be stacked successively, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer, to the Ohmic electrode annealing with this Ni/Ge/Au layer, to form Ohmic electrode;
(4) on silicon dioxide layer first by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer and the Schottky electrode with Ni/Au layer respectively, wherein metamaterial layer directly contacts with n type gaas layer, Schottky electrode is positioned on silicon dioxide layer, and the distance between Schottky electrode and metamaterial layer is 1mm ~ 1.5mm.
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| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
| CN112731547A (en) * | 2020-12-28 | 2021-04-30 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Integrated superstructure gallium arsenide-based impurity blocking band detector and preparation method thereof |
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|---|---|---|---|---|
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
| CN112731547A (en) * | 2020-12-28 | 2021-04-30 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Integrated superstructure gallium arsenide-based impurity blocking band detector and preparation method thereof |
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