CN104237202A - 一种硅纳米阵列基底及其制备方法、应用 - Google Patents
一种硅纳米阵列基底及其制备方法、应用 Download PDFInfo
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- CN104237202A CN104237202A CN201410479276.2A CN201410479276A CN104237202A CN 104237202 A CN104237202 A CN 104237202A CN 201410479276 A CN201410479276 A CN 201410479276A CN 104237202 A CN104237202 A CN 104237202A
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Abstract
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Cited By (5)
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---|---|---|---|---|
CN104730059A (zh) * | 2015-03-18 | 2015-06-24 | 苏州大学 | 一种点阵列表面增强拉曼基底及制备方法 |
CN105084305A (zh) * | 2015-06-17 | 2015-11-25 | 中国科学院微电子研究所 | 一种纳米结构及其制备方法 |
CN107543813A (zh) * | 2017-08-22 | 2018-01-05 | 中国工程物理研究院化工材料研究所 | 一种表面增强拉曼有序复合阵列芯片的制备方法及其应用 |
CN112461811A (zh) * | 2020-11-30 | 2021-03-09 | 西北民族大学 | 一种柔性sers基底的制备方法、制得的基底及其应用 |
CN114199854A (zh) * | 2021-12-15 | 2022-03-18 | 曲阜师范大学 | 一种柔性透明圆锥体有序阵列构筑的sers衬底制备方法 |
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GB2433589A (en) * | 2006-04-26 | 2007-06-27 | Univ Newcastle | Quantum dots which enable luminescence signals to be detected simultaneously with Raman signals generated by the moiety coupled to the quantum dots |
US20090274609A1 (en) * | 2008-05-01 | 2009-11-05 | Honda Motor Co., Ltd. | Synthesis Of High Quality Carbon Single-Walled Nanotubes |
CN101614668A (zh) * | 2009-07-22 | 2009-12-30 | 中国科学院理化技术研究所 | 基于表面增强拉曼散射效应的硅纳米线传感器及其应用 |
CN102072894A (zh) * | 2009-11-25 | 2011-05-25 | 欧普图斯(苏州)光学纳米科技有限公司 | 用基于纳米结构的光谱检测方法检测化学物和生化物杂质 |
CN103531657A (zh) * | 2013-09-06 | 2014-01-22 | 中电电气(南京)光伏有限公司 | 一种多晶/类单晶硅太阳能电池选择性发射极结构的制备方法 |
CN104020151A (zh) * | 2014-07-10 | 2014-09-03 | 苏州大学 | 一种表面增强拉曼金属纳米圆盘阵列基底的制备方法 |
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GB2433589A (en) * | 2006-04-26 | 2007-06-27 | Univ Newcastle | Quantum dots which enable luminescence signals to be detected simultaneously with Raman signals generated by the moiety coupled to the quantum dots |
US20090274609A1 (en) * | 2008-05-01 | 2009-11-05 | Honda Motor Co., Ltd. | Synthesis Of High Quality Carbon Single-Walled Nanotubes |
CN101614668A (zh) * | 2009-07-22 | 2009-12-30 | 中国科学院理化技术研究所 | 基于表面增强拉曼散射效应的硅纳米线传感器及其应用 |
CN102072894A (zh) * | 2009-11-25 | 2011-05-25 | 欧普图斯(苏州)光学纳米科技有限公司 | 用基于纳米结构的光谱检测方法检测化学物和生化物杂质 |
CN103531657A (zh) * | 2013-09-06 | 2014-01-22 | 中电电气(南京)光伏有限公司 | 一种多晶/类单晶硅太阳能电池选择性发射极结构的制备方法 |
CN104020151A (zh) * | 2014-07-10 | 2014-09-03 | 苏州大学 | 一种表面增强拉曼金属纳米圆盘阵列基底的制备方法 |
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胡耀志,黄飙: "反应离子刻蚀的机理及其实验研究方法", 《真空科学与技术》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104730059A (zh) * | 2015-03-18 | 2015-06-24 | 苏州大学 | 一种点阵列表面增强拉曼基底及制备方法 |
CN105084305A (zh) * | 2015-06-17 | 2015-11-25 | 中国科学院微电子研究所 | 一种纳米结构及其制备方法 |
CN105084305B (zh) * | 2015-06-17 | 2017-07-04 | 中国科学院微电子研究所 | 一种纳米结构及其制备方法 |
CN107543813A (zh) * | 2017-08-22 | 2018-01-05 | 中国工程物理研究院化工材料研究所 | 一种表面增强拉曼有序复合阵列芯片的制备方法及其应用 |
CN112461811A (zh) * | 2020-11-30 | 2021-03-09 | 西北民族大学 | 一种柔性sers基底的制备方法、制得的基底及其应用 |
CN112461811B (zh) * | 2020-11-30 | 2023-09-26 | 西北民族大学 | 一种柔性sers基底的制备方法、制得的基底及其应用 |
CN114199854A (zh) * | 2021-12-15 | 2022-03-18 | 曲阜师范大学 | 一种柔性透明圆锥体有序阵列构筑的sers衬底制备方法 |
CN114199854B (zh) * | 2021-12-15 | 2024-01-12 | 曲阜师范大学 | 一种柔性透明圆锥体有序阵列构筑的sers衬底制备方法 |
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Effective date of registration: 20220325 Address after: 250000 Room 516, building 1, Pansheng biomedical industrial park, intersection of Gangyuan 8th Road and Gangxing 2nd Road, Jinan area, China (Shandong) pilot Free Trade Zone, Jinan, Shandong Province Patentee after: Shandong Kexun Biochip Technology Co.,Ltd. Address before: 215000 room 206, Yuhuayuan shopping plaza, high tech Zone, Suzhou City, Jiangsu Province Patentee before: Suzhou Sanmu Intellectual Property Service Co.,Ltd. |
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