CN104233422A - Device for depositing metal on substrate - Google Patents
Device for depositing metal on substrate Download PDFInfo
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- CN104233422A CN104233422A CN201310252879.4A CN201310252879A CN104233422A CN 104233422 A CN104233422 A CN 104233422A CN 201310252879 A CN201310252879 A CN 201310252879A CN 104233422 A CN104233422 A CN 104233422A
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Abstract
The invention aims at providing a device for depositing a metal on a substrate. The device comprises a semiconductor device substrate, a substrate box, a substrate holding device, a first manipulator, a second manipulator, a first loading platform, a second loading platform, a plurality of electroplating cells and electrolyte solution supply cells. Since the device for electrochemical deposition of the metal on the substrate provided by the invention is provided with the plurality of electroplating cells, each electroplating cell can be used for treating a plurality of substrates at the same time, the volume of the device is reduced and thus the production efficiency is improved. Furthermore, during the electrochemical deposition of the metal, the substrate can do a circumferential movement around a positive electrode so that the uniformity of the electroplating is improved.
Description
Technical field
The present invention relates to a kind of for the equipment at deposited on substrates metal, be specifically related to a kind of can the simultaneously equipment of electrochemical deposition of metal on multiple substrates.
Background technology
In recent years, along with chip size is more and more less, integrated level is more and more higher, and computer, communication, automotive electronics and other consumer products it is also proposed higher requirement to ic chip package technology.Chip Packaging require than in the past less, thinner, possess high reliability, multi-functional, less energy-consumption and low cost.Traditional Solder Bumps (solder bump) encapsulation technology cannot meet the requirement of Advanced Packaging, copper post bump technology (copper pillar) and silicon through hole technology (through silicon via, TSV) become the large focus of two in Advanced Packaging gradually.
The same with Solder Bumps, copper post projection is also be applied to technology chip package connecting chip and support plate.But compare with Solder Bumps, copper post projection has better properties and lower overall package cost.Can collapse to spherical different in solder reflow process from Solder Bumps, copper post projection can keep its shape, is applicable to less live width, meets the requirement of highly integrated chip encapsulation.And copper has the resistance less than tinsel and the thermal conductivity of Geng Gao, copper post projection has better electroconductibility and thermal conductivity than Solder Bumps, the heat produced when can reduce energy consumption and the work of chip.Cu electroplating is the appropriate process making copper post projection.Copper post producing lug process is: first deposit one deck inculating crystal layer, then on inculating crystal layer, smear one deck optical cement and form pattern on optical cement, then in pattern, utilizing electrochemical method metal refining copper post, finally removing unnecessary optical cement and obtain copper post projection.
Except traditional plane formula encapsulation technology, advanced laminated type three-dimensional packaging technology was also applied in recent years in IC manufacturing industry.Three-dimensional packaging technology makes in single package body can stacking multiple chip, and interconnect length significantly reduces, and Signal transmissions is faster, and cost is lower; Together chip-stacked by multiple difference in functionality, make single package body realize more function, and size and weight can reduce decades of times.Silicon through hole technology is one of core technology realizing three-dimension packaging.Silicon through hole technology has following potential advantage: 1) connecting length may be as little to the thickness of a chip, can be reduced the conductor length of logic module interconnection by the vertical stack of logic module instead of horizontal spreading greatly; 2) high-density high depth becomes possibility than interconnection, and success is realized complicated multichip system on silicon chip, and its physical integration density will be much higher than present multi-chip module (MCM); 3) due to electrical connection nearer between the logic module in Different Plane, RC postpones to be improved greatly.The key process technology that three-dimensional chip heap superimposition interconnecting silicon through holes needs comprises: a) form through hole; B) isolation layer, the deposition of blocking layer and inculating crystal layer; C) copper is filled, and removes and RDL; D) wafer thinning; E) the location calibration of silicon chip/chip, line and cutting.In silicon through hole, deposited copper also needs electrochemical deposition method to realize.
Copper post bump technology has similar requirement with silicon through hole technology to electrochemical deposition equipment.First in copper post bump technology in the height of copper post and silicon through hole the degree of depth of deposited copper all at 30 to 150 microns, be far longer than the deposit thickness required in the copper wiring technique of chip rear end, therefore the sedimentation rate that electrochemical deposition equipment can reach higher is required, to realize larger productive rate.Usually be applied to copper post bump technology and silicon through hole technical requirements electrochemical deposition equipment to have and be not less than 40 silicon chip productive rate hourly.Next requires that electrochemical deposition equipment can realize good homogeneity.For copper post bump technology, usually require that the copper post planeness that in silicon chip, plating is formed is less than 5%, to meet the requirement of subsequent encapsulating process step.And to silicon through hole technology, usually require that in silicon chip, electroplating evenness is less than 2%, to meet the requirement of subsequent planarization technique.And require that electrochemical deposition equipment has alap cost.In order to reduce costs, electrochemical deposition equipment electrochemical deposition cavity requires process multi-disc silicon chip simultaneously, thus reduces number and other corresponding hardware, such as power supplys of electrochemical deposition cavity.
The business-like electrochemical metal depositing device part for Chip Packaging is based on chip rear end copper-connection electrochemical deposition equipment development at present, electrochemical deposition cavity primary treatment a slice silicon chip, in electrochemical deposition process, silicon chip face level to be dipped in downwards in electroplate liquid and to rotate with certain speed.This kind equipment can realize good homogeneity usually, but in electroplate liquid, speed of rotation can not be too high due to silicon chip, otherwise electroplate liquid can be caused to splash, and therefore sedimentation rate is usually lower, be about 1 micron per hour.In order to reach the requirement of productive rate, need the quantity of electrochemical deposition cavity in increase equipment, therefore this kind equipment also has higher cost usually.Separately have partial electro chemical metal depositing device to adopt silicon chip to be dipped vertically into the design of electroplate liquid, an electrochemical deposition cavity can process 2 silicon chips simultaneously, reduces cost.But because silicon chip is static when electrochemical deposition, usually good homogeneity can not be obtained.And in these commercialization electrochemical deposition equipment, anode, only in the face of a slice silicon chip, needs the curtage that a bench control system controls between this anode and silicon chip in electrochemical deposition process simultaneously.Usually need tens even tens bench control systems in an equipment, significantly increase equipment cost.
Summary of the invention
The object of the present invention is to provide a kind of equipment for electrochemical deposition of metal on substrate, described equipment has: semiconductor device substrates, and described semiconductor device substrates has one to be deposited; Cassette of substrates, described cassette of substrates is in order to store described semiconductor device substrates; Substrate holding unit, described substrate holding unit is in order to semiconductor device substrates described in fixing; First mechanical manipulator; Second mechanical manipulator; First loading stage; Second loading stage; Electroplating unit, described electroplating unit has anode; Electrolytic solution, described electrolytic solution has metal ion and organic compound; Electrolyte supply unit, supplies described electrolytic solution to described electroplating unit; It is characterized in that: described first mechanical manipulator transmits described semiconductor device substrates between described cassette of substrates and described first loading stage; Described second mechanical manipulator transmits described substrate holding unit between the first loading stage and described second loading stage; Described first loading stage is used for semiconductor device substrates described in described substrate holding unit horizontal load and horizontal unloading; Described first loading stage has turning device, in order to overturn described first loading stage between level and vertical plane; Described second loading stage is used for vertically loading and vertically unloading described substrate holding unit; Described second loading stage has lifting device, in order to described second loading stage of relatively described electroplating unit lifting; Described second loading stage has wheelwork, in order to rotate described second loading stage relative to described electroplating unit; Described lifting device drives described substrate holding unit to immerse described electrolytic solution by described second loading stage; Described wheelwork drives described substrate holding unit to move in a circle around described anode in described electroplating unit by described second loading stage.
Provided by the invention on substrate the equipment of electrochemical deposition of metal there is multiple electroplating unit, each electroplating unit can process multiple substrates simultaneously, decreases equipment volume, improves production efficiency.And in the process of electrochemical deposition of metal, substrate can move in a circle around anode, improves electroplating evenness.
Accompanying drawing explanation
The schematic diagram of the equipment of electrochemical deposition of metal on substrate that Fig. 1 a provides for the embodiment of the present invention one;
The vertical view of the equipment of electrochemical deposition of metal on substrate that Fig. 1 b provides for the embodiment of the present invention one;
The schematic diagram of the fixing storage silo that the equipment of electrochemical deposition of metal on substrate that Fig. 2 provides for the embodiment of the present invention one has;
The schematic diagram of the first loading stage that the equipment of electrochemical deposition of metal on substrate that Fig. 3 a provides for the embodiment of the present invention one has;
The front view of the first loading stage that the equipment of electrochemical deposition of metal on substrate that Fig. 3 b provides for the embodiment of the present invention one has;
Another schematic diagram of the first loading stage that the equipment of electrochemical deposition of metal on substrate that Fig. 3 c provides for the embodiment of the present invention one has;
Another schematic diagram of the first loading stage that the equipment of electrochemical deposition of metal on substrate that Fig. 3 d provides for the embodiment of the present invention one has;
The schematic diagram of the second mechanical manipulator that the equipment of electrochemical deposition of metal on substrate that Fig. 4 a provides for the embodiment of the present invention one has;
The front view of the second mechanical manipulator that the equipment of electrochemical deposition of metal on substrate that Fig. 4 b provides for the embodiment of the present invention one has;
The schematic diagram of the 3rd mechanical manipulator that the equipment of electrochemical deposition of metal on substrate that Fig. 5 a provides for the embodiment of the present invention one has;
The front view of the 3rd mechanical manipulator that the equipment of electrochemical deposition of metal on substrate that Fig. 5 b provides for the embodiment of the present invention one has;
The schematic diagram of the electroplating unit that the equipment of electrochemical deposition of metal has on substrate that Fig. 6 a provides for the embodiment of the present invention one;
The front view of the electroplating unit that the equipment of electrochemical deposition of metal has on substrate that Fig. 6 b provides for the embodiment of the present invention one;
Another schematic diagram of the electroplating unit that the equipment of electrochemical deposition of metal has on substrate that Fig. 7 a provides for the embodiment of the present invention one;
Another front view of the electroplating unit that the equipment of electrochemical deposition of metal has on substrate that Fig. 7 b provides for the embodiment of the present invention one;
The schematic diagram of the equipment of electrochemical deposition of metal on substrate that Fig. 8 provides for the embodiment of the present invention two;
Fig. 9 is a kind of method utilizing embodiment of the present invention electrochemical deposition of metal on substrate.
Specific implementation method
Describe the present invention in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining the present invention in this illustrative examples of the present invention and explanation, but not as a limitation of the invention.
Embodiment one:
The schematic diagram of the equipment of electrochemical deposition of metal on substrate that Fig. 1 a provides for the embodiment of the present invention one, the vertical view of the equipment of electrochemical deposition of metal on substrate that Fig. 1 b provides for the embodiment of the present invention one.Described equipment has cassette of substrates 101, first mechanical manipulator 102, substrate holding unit 104, fixing storage silo 103, first loading stage 105, second mechanical manipulator 106, second loading stage 108, electroplating unit 109 and electrolyte supply unit 110.As illustrated in figs. ia and ib, the equipment of electrochemical deposition of metal on substrate that the embodiment of the present invention one provides has 4 the second loading stages 108 and 4 described electroplating units, 109, corresponding described electroplating unit 109 of described second loading stage 108.Described cassette of substrates 101 is mounted with more semiconductor device substrate, and described substrate has one to be deposited.Described substrate holding unit 104 for fixing 1 described semiconductor device substrates, and exposes to be deposited of described substrate.Described fixing storage silo 103 stores multiple described substrate holding unit 104.The equipment of described electrochemical deposition of metal on substrate also has the 3rd mechanical manipulator 111, and the described substrate holding unit in described fixing storage silo 103 is sent on described first loading stage 105 by described 3rd mechanical manipulator 111.Described first loading stage 105 is for carrying described substrate holding unit 104.Described first mechanical manipulator 102 transmits described semiconductor device substrates between described cassette of substrates 101 and the described substrate holding unit 104 of described loading stage 105 carrying.Described second mechanical manipulator 106 transmits described substrate holding unit 104 between described first loading stage 105 and described second loading stage 108.Described second loading stage 108 can carry substrate holding unit 104 described at least one.As illustrated in figs. ia and ib, described second loading stage 108 can carry 5 described substrate holding units 104.When described second loading stage 108 carries multiple described substrate holding unit 104, first a described substrate holding unit 104 is sent on described second loading stage 108 by described second mechanical manipulator 106, and then described second loading stage 108 rotates to an angle.Such as when described second loading stage 108 carries 5 described substrate holding units 104, described second loading stage 108 rotates 72 degree.Then substrate holding unit 104 described in another is sent on described second loading stage 108 by described second mechanical manipulator 106.As mentioned above, multiple described substrate holding unit 104 is sequentially transferred to after on described second loading stage 108, and described second loading stage 108 drives multiple described substrate holding unit 104 to enter described electroplating unit 109.
Described electroplating unit 109 has a plating chamber and at least one anode, and described electrolyte supply unit 110 supplies electrolytic solution in described plating chamber.Described electrolytic solution has at least one metal ion and at least one organic additive, and described metal ion is the mixing of the one or more than one in gold and silver, copper, iron, zinc, cobalt, nickel, lead, tin.When described substrate holding unit 104 is sent to after on described second loading stage 108, described second loading stage 108 moves in the described electroplating unit 109 of its correspondence, the face to be deposited of the substrate of described substrate holding unit 104 fixing is immersed in described electrolytic solution, and in the process of electrochemical deposition of metal, drives described substrate holding unit 104 to move in a circle around described anode.Described equipment also has a power supply unit 112, and described power supply unit 112 has at least one power supply.As illustrated in figs. ia and ib, the described power supply unit 112 that the equipment of electrochemical deposition of metal on substrate that the embodiment of the present invention one provides has has at least 4 described power supplys.Described power supply connects the described anode that described second loading stage 108 described electroplating unit 109 corresponding with it has.Described power supply is conducted by described electrolytic solution with described anode and to be deposited of described substrate in the process of electrochemical deposition of metal.Described equipment also has a detecting unit 113, and described detecting unit 113 is for detecting the concentration of metal ion and organic additive in the electrolytic solution in described electrolyte supply unit 110.Described equipment also has cleaning unit 107.After the step of electrochemical deposition of metal completes, described substrate holding unit 104 is sent in described cleaning unit 107 by described second mechanical manipulator 106, cleans and drying the described substrate of described substrate holding unit 104 and its fixing.
Fig. 2 is the schematic diagram of the fixing storage silo 103 that described equipment has.A described fixing storage silo 103 stores multiple described substrate holding unit 104, and described substrate holding unit 104 vertical storage is in described fixing storage silo 103.Described substrate holding unit 104 has a substrate casket, and substrate casket front has a void region, exposes to be deposited of described substrate.Void region inner surface edge has flexible materials to seal, protect described substrate back not with described electrolyte contacts.Described substrate casket inside has a substrate pallet, is connected with the substrate casket back side by spring, and described substrate pallet has iron.
Fig. 3 a is the schematic diagram of the first loading stage 105 that described equipment has.Described first loading stage 105 has roll-over table 301 and a universal stage 302.Described universal stage 302 inside has an electro-magnet, is controlled by a magnetic switch.As shown in Figure 3 b, described universal stage 302 can be rotated around shown in figure by the axle at described universal stage 302 center.Described substrate holding unit 104 is sent to described first loading stage 105 from described fixing storage silo 103 by described 3rd mechanical manipulator 111, and described substrate holding unit 104 is vertically fixed on described universal stage 302, as shown in Figure 3 c.Described roll-over table 301 overturns, and makes described universal stage 302 become horizontality with the described substrate holding unit 104 be fixed on described universal stage 302 from plumbness, as shown in Figure 3 d.The dextrorotation of described universal stage 302 turn 90 degrees, and makes the open top of described substrate holding unit 104 towards the first mechanical manipulator 102.Described magnetic switch is opened, and the electro-magnet of described universal stage 302 inside produces magnetism with the substrate pallet in described substrate casket, and described spring is compressed, in described substrate casket inner formation space.Described substrate is sent in the substrate casket of described substrate holding unit 104 by described first mechanical manipulator 102 from described cassette of substrates 101, is positioned on described substrate pallet.After the first mechanical manipulator 102 leaves described substrate casket, described magnetic switch cuts out, and described spring recovers.Described substrate is pressed in described void region inner surface edge by described substrate pallet to be had on flexible materials, forms sealing.Described substrate is by described substrate holding unit 104 fixing.Described universal stage 302 is rotated counterclockwise 90 degree, and described roll-over table upset, makes the substrate holding unit 104 holding described substrate return to plumbness.
Fig. 4 a is the schematic diagram of the second mechanical manipulator that described equipment has.Described second mechanical manipulator 106 has guide rail 401, pedestal 402, at least one mechanical arm 403, VTOL (vertical take off and landing) axle 404 and moves horizontally axle 405.Described mechanical arm 403 is fixed on described pedestal 402, can vertically move along described VTOL (vertical take off and landing) axle 404 and move horizontally along moving horizontally axle 405 under the control of drive unit.Described mechanical arm 403 under the drive of described pedestal 402, also can along described guide rail 401 perpendicular to VTOL (vertical take off and landing) axle 404 and move horizontally axle 405 direction on move horizontally.Fig. 4 b is the front view of the second mechanical manipulator that described equipment has.As shown in Figure 4 b, described mechanical arm 403 can be rotated by the turning axle at described pedestal 402 center around shown in figure.
Fig. 5 a is the schematic diagram of the 3rd mechanical manipulator that described equipment has.Described 3rd mechanical manipulator 111 has guide rail 501, pedestal 502, at least one mechanical arm 503 and a VTOL (vertical take off and landing) axle 504.Described mechanical arm 503 is fixed on described pedestal 502, can along the vertically movement of described VTOL (vertical take off and landing) axle 504 under the control of drive unit.Described mechanical arm 503, under the drive of described pedestal 502, also can move horizontally on the direction perpendicular to VTOL (vertical take off and landing) axle 504 along described guide rail 501.Fig. 5 b is the front view of the 3rd mechanical manipulator that described equipment has.As shown in Figure 5 b, described mechanical arm 503 can be rotated by the turning axle at described pedestal 502 center around shown in figure.
Fig. 6 a is the schematic diagram of the electroplating unit 109 that described equipment has.As shown in Figure 6 a, described second loading stage 108 is mounted with 5 described substrate holding units 104, and drives 5 described substrate holding units 104 to be immersed in the electrolytic solution in described electroplating unit 109.Described equipment has lifting device 1001 and a swivel arrangement 1002.Described lifting device 1001 rises, make described second loading stage 108 be positioned at a delivering position, described substrate holding unit 104 is sent on described second loading stage 108 or by described substrate holding unit 104 and takes away from described second loading stage 109 by described second mechanical manipulator 106.Described lifting device 1001 is fallen, in the electrolytic solution making described second loading stage 108 drive described substrate holding unit 104 to be immersed in described electroplating unit 109.Described lifting device 1001 is the one in cylinder, step motor or servomotor.Described swivel arrangement 1002 makes described second loading stage 108 drive described substrate holding unit 104 to move in a circle in described electroplating unit 109.Described swivel arrangement 1002 is the one in step motor or servomotor.Fig. 6 b is the front view of the electroplating unit 109 that described equipment has.Described electroplating unit 109 has a plating chamber 601.Described electroplating unit has at least one anode.As shown in Figure 6 b, described electroplating unit 109 has an anode 602a and another anode 602b.Described anode 602a and 602b is a tubular structure, puts with one heart in described plating chamber 601.The surface of described anode 602a and 602b has hole, forms hole patterns.The bore hole size on the surface of described anode 602a and 602b is 0.5mm to 300mm.The void shape on the surface of described anode 602a and 602b is the mixing of the one or more than one in circular port, tri-angle-holed, polygonal hole, slotted eye, irregularly shaped hole.The pattern of the bore hole size on the surface of described anode 602a and 602b, shape and hole formation is separate, can be identical, also can be different.
Fig. 7 a is another schematic diagram of the electroplating unit that described equipment has.As shown in Figure 7a, described lifting device 1001 rises, and described second loading stage 108 is positioned at described delivering position, above described electroplating unit 109.Substrate holding unit 104 described in described second loading stage 108 unloaded.Fig. 7 b is another front view of the electroplating unit that described equipment has.As shown in Figure 7b, described lifting device 1001 rises, and described second loading stage 108 is positioned at described delivering position, above described electroplating unit 109.Described second loading stage 108 is mounted with described substrate holding unit 104.
As shown in Figure 9, a kind of method utilizing the embodiment of the present invention one to carry out electrochemical deposition of metal, comprising:
Step one, described substrate holding unit 104 is sent on described first loading stage 105 by described 3rd mechanical manipulator 111;
Step 2, described substrate is sent in described substrate holding unit 104 by described cassette of substrates 101 by described first mechanical manipulator 102;
Step 3, the described substrate holding unit 104 holding described substrate is sent on described second loading stage 108 by described second mechanical manipulator 106;
Step 4, described second loading stage 108 drives described substrate holding unit 104 to enter in described electroplating unit 109, and described substrate holding unit 104 is immersed in described electrolytic solution, and drives described substrate holding unit 104 to move in a circle around described anode;
Step 5, over the substrate electrochemical deposition of metal;
Step 6, described second loading stage 108 is raised up to delivering position;
Step 7, described substrate holding unit 104 is sent in described cleaning unit 107 by described second mechanical manipulator 106;
Step 8, described substrate holding unit 104 is also dry by cleaning in described cleaning unit 107;
Step 9, described substrate holding unit 104 is sent on described first loading stage 105 by described 3rd mechanical manipulator 111;
Step 10, described substrate sends back in described cassette of substrates 101 by described substrate holding unit 104 by described first mechanical manipulator 101.
The holding unit of substrate described in step one 104 is sent on described first loading stage 105 by described 3rd mechanical manipulator 111, is vertically fixed on described universal stage 302.The roll-over table 301 that described first loading stage 105 has overturns, and makes described universal stage 302 and described substrate holding unit 104 fixed thereon by vertically transferring horizontal positioned to.Described universal stage 302 90-degree rotation, makes described substrate holding unit 104 upper end open in the face of described first mechanical manipulator 102.By producing magneticaction between described universal stage 302 and described substrate holding unit 104, described substrate holding unit 104 is made to be in delivery status.Then, as described in step 2, described substrate is sent in described substrate holding unit 104 by described cassette of substrates 101 by described first mechanical manipulator 102.Cut off the magneticaction between described universal stage 302 and described substrate holding unit 104, make described substrate holding unit 104 be in sealed state and substrate described in fixing.In step 3, when described second loading stage 108 carries multiple described substrate holding unit 104, first a described substrate holding unit 104 is sent on described second loading stage 108 by described second mechanical manipulator 106, and then described second loading stage 108 rotates to an angle.Such as when described second loading stage 108 carries 5 described substrate holding units 104, described second loading stage 108 rotates 72 degree.Then substrate holding unit 104 described in another is sent on described second loading stage 108 by described second mechanical manipulator 106.As mentioned above, multiple described substrate holding unit 104 is sequentially transferred to after on described second loading stage 108, and described second loading stage 108 drives multiple described substrate holding unit 104 to enter described electroplating unit 109.In step 5 over the substrate electrochemical deposition of metal time, described power supply exports as one or more the mixing in constant voltage, continuous current, positive pulse wave, rp pulse ripple.In step 8, when described holding unit 104 is cleaned in described cleaning unit 107, cleaning liquid is ultrapure water or acidic chemical liquid.Cleaning liquid is surperficial to described substrate holder unit 104 by nozzle ejection, or by entering substrate holder unit 104 described in described cleaning unit submergence bottom cleaning unit 107.After cleaning completes, described nozzle stops spraywashing liquid, or cleaning liquid is discharged by bottom described cleaning unit.Finally by described substrate holder unit 104 surface injection nitrogen gas stream or the nitrogen gas stream containing Virahol, drying is carried out to described substrate holder unit 104.
As shown in Figure 1a, 107 also can be infiltration unit.Described infiltration unit and described cleaning unit are same unit.Another kind utilizes the embodiment of the present invention one to carry out the method for electrochemical deposition of metal, comprising:
Step one, described substrate holding unit 104 is sent on described first loading stage 105 by described 3rd mechanical manipulator 111;
Step 2, described substrate is sent in described substrate holding unit 104 by described cassette of substrates 101 by described first mechanical manipulator 102;
Step 3, the described substrate holding unit 104 holding described substrate is sent in described infiltration unit 107 by described second mechanical manipulator 106;
Step 4, described substrate carries out surperficial pre-invasion in described infiltration unit 107;
Step 5, the described substrate holding unit 104 holding described substrate is sent on described second loading stage 108 by described second mechanical manipulator 106;
Step 6, described second loading stage 108 drives described substrate holding unit 104 to enter in described electroplating unit 109, and described substrate holding unit 104 is immersed in described electrolytic solution, and drives described substrate holding unit 104 to move in a circle around described anode;
Step 7, over the substrate electrochemical deposition of metal;
Step 8, described second loading stage 108 is raised up to delivering position;
Step 9, described substrate holding unit 104 is sent in described cleaning unit 107 by described second mechanical manipulator 106;
Step 10, described substrate holding unit 104 is also dry by cleaning in described cleaning unit 107;
Step 11, described substrate holding unit 104 is sent on described first loading stage 105 by described 3rd mechanical manipulator 111;
Step 12, described substrate sends back in described cassette of substrates 101 by described substrate holding unit 104 by described first mechanical manipulator 101.
In step 4, described pending substrate has the pattern of deep hole or groove formation.If described substrate directly immerses described electrolytic solution, deep hole or trench interiors cannot well be infiltrated, and can form defect in electroplating process, affect performance and the yield of device.Therefore be necessary to carry out pre-invasion to described substrate before plating.In described infiltration unit 107, by infiltrating liquid to the conveying of to be deposited of described substrate or containing infiltrating the gas of fluid molecule, carrying out pre-invasion to described substrate face to be deposited, the generation of defect in deep hole and groove when avoiding electroplating.
Embodiment two:
The schematic diagram of the equipment of electrochemical deposition of metal on substrate that Fig. 8 provides for the embodiment of the present invention one.Described equipment has cassette of substrates 801, first mechanical manipulator 802, sinks to the bottom holding unit 804, fixing storage silo 803, first loading stage 805, second mechanical manipulator 806, second loading stage 808, electroplating unit 809 and electrolyte supply unit 810.As shown in Figure 8, the equipment of electrochemical deposition of metal on substrate that the embodiment of the present invention one provides has 4 the second loading stages 808 and 4 described electroplating units, 809, corresponding described electroplating unit 809 of described second loading stage 808.Described cassette of substrates 801 is mounted with more semiconductor device substrate, and described substrate has one to be deposited.Described substrate holding unit 804 for fixing 1 described semiconductor device substrates, and exposes to be deposited of described substrate.Described fixing storage silo 803 stores multiple described substrate holding unit 804.The equipment of described electrochemical deposition of metal on substrate also has the 3rd mechanical manipulator 811, and the described substrate holding unit in described fixing storage silo 803 is sent on described first loading stage 805 by described 3rd mechanical manipulator 811.Described first loading stage 805 is for carrying described substrate holding unit 804.Described first mechanical manipulator 802 transmits described semiconductor device substrates between described cassette of substrates 801 and the described substrate holding unit 804 of described loading stage 805 carrying.Described second mechanical manipulator 806 transmits described substrate holding unit 804 between described first loading stage 805 and described second loading stage 808.Described second loading stage 808 can carry substrate holding unit 804 described at least one.As shown in Figure 8, described second loading stage 808 can carry 5 described substrate holding units 804.Described electroplating unit 809 has a plating chamber and at least one anode, and described electrolyte supply unit 810 supplies electrolytic solution in described plating chamber.Described electrolytic solution has at least one metal ion and at least one organic additive, and described metal ion is the mixing of the one or more than one in gold and silver, copper, iron, zinc, cobalt, nickel, lead, tin.When described substrate holding unit 804 is sent to after on described second loading stage 808, described second loading stage 808 moves in the described electroplating unit 809 of its correspondence, the face to be deposited of the substrate of described substrate holding unit 804 fixing is immersed in described electrolytic solution, and in the process of electrochemical deposition of metal, drives described substrate holding unit 804 to move in a circle around described anode.Described equipment also has a power supply unit 812, and described power supply unit 812 has at least one power supply.As shown in Figure 8, the described power supply unit 812 that the equipment of electrochemical deposition of metal on substrate that the embodiment of the present invention one provides has has at least 4 described power supplys.Described power supply connects the described anode that described second loading stage 808 described electroplating unit 809 corresponding with it has.Described power supply is conducted by described electrolytic solution with described anode and to be deposited of described substrate in the process of electrochemical deposition of metal.Described equipment also has a detecting unit 813, and described detecting unit 813 is for detecting the concentration of metal ion and organic additive in the electrolytic solution in described electrolyte supply unit 810.Described equipment also has cleaning unit 807.After the step of electrochemical deposition of metal completes, described substrate holding unit 804 is sent in described cleaning unit 807 by described second mechanical manipulator 806, cleans and drying the described substrate of described substrate holding unit 804 and its fixing.
The embodiment of the present invention two is with the difference of embodiment one, and the equipment of electrochemical deposition of metal on substrate that the embodiment of the present invention two provides also has annealing unit 814.After described substrate holding unit 804 and the described substrate of its fixing clean and drying completes, described substrate holding unit 804 is sent on described first loading stage 805 by described 3rd mechanical manipulator 811 from described cleaning unit 807.Described substrate is sent in described annealing unit 814 and anneals by described first mechanical manipulator 802 from described substrate holding unit 804.After having annealed, described substrate is sent in described cassette of substrates 801 by described first mechanical manipulator 814.
Utilize the embodiment of the present invention two to carry out a method for electrochemical deposition of metal, comprising:
Step one, described substrate holding unit 804 is sent on described first loading stage 805 by described 3rd mechanical manipulator 811;
Step 2, described substrate is sent in described substrate holding unit 804 by described cassette of substrates 801 by described first mechanical manipulator 802;
Step 3, the described substrate holding unit 804 holding described substrate is sent on described second loading stage 808 by described second mechanical manipulator 806;
Step 4, described second loading stage 808 drives described substrate holding unit 804 to enter in described electroplating unit 809, and described substrate holding unit 804 is immersed in described electrolytic solution, and drives described substrate holding unit 104 to move in a circle around described anode;
Step 5, over the substrate electrochemical deposition of metal;
Step 6, described second loading stage 808 is raised up to delivering position;
Step 7, described substrate holding unit 804 is sent in described cleaning unit 807 by described second mechanical manipulator 806;
Step 8, described substrate holding unit 804 is also dry by cleaning in described cleaning unit 807;
Step 9, described substrate holding unit 804 is sent on described first loading stage 805 by described 3rd mechanical manipulator 811;
Step 10, described substrate is sent in described annealing unit 814 by described first mechanical manipulator 802;
Step 11, described substrate is annealed in described annealing unit 814;
Step 12, described substrate sends back in described cassette of substrates 801 by described annealing unit 814 by described first mechanical manipulator 801.
The scheme provided the embodiment of the present invention has above carried out detailed explanation, applies specific case and set forth principle of the present invention and embodiment in the present invention, and above embodiment illustrates and is only applicable to the principle helping to understand the embodiment of the present invention.For one of ordinary skill in the art, according to the embodiment of the present invention, all can change to some extent in specific embodiments and applications, do not departing from the basis of present inventive concept, this description should not be construed as limitation of the present invention.
Claims (10)
1., for an equipment for electrochemical deposition of metal on substrate, described equipment has:
Semiconductor device substrates, described semiconductor device substrates has one to be deposited;
Cassette of substrates, described cassette of substrates is in order to store described semiconductor device substrates;
Substrate holding unit, described substrate holding unit is in order to semiconductor device substrates described in fixing;
First mechanical manipulator;
Second mechanical manipulator;
First loading stage;
Second loading stage;
Electroplating unit, described electroplating unit has anode;
Electrolytic solution, described electrolytic solution has metal ion and organic compound;
Electrolyte supply unit, supplies described electrolytic solution to described electroplating unit;
Lifting device;
Wheelwork;
It is characterized in that:
Described first mechanical manipulator transmits described semiconductor device substrates between described cassette of substrates and described first loading stage;
Described second mechanical manipulator transmits described substrate holding unit between the first loading stage and described second loading stage;
Described first loading stage is used for semiconductor device substrates described in described substrate holding unit horizontal load and horizontal unloading;
Described first loading stage has turning device, in order to overturn described substrate holding unit between level and vertical plane;
Described second loading stage is used for vertically loading and vertically unloading described substrate holding unit;
Described lifting device, in order to described second loading stage of relatively described electroplating unit lifting, drives described substrate holding unit immerse or leave described electrolytic solution by described second loading stage;
Described wheelwork, in order to rotate described second loading stage relative to described electroplating unit, drives described substrate holding unit to move in a circle around described anode in described electroplating unit by described second loading stage.
2. the equipment described in claim 1, is characterized in that, described equipment also has fixing storage silo, and described fixing storage silo is for storing described substrate holding unit.
3. the equipment described in claim 2, is characterized in that, described equipment also has the 3rd mechanical manipulator, and described 3rd mechanical manipulator is for being sent to described first loading stage by described substrate holding unit from described fixing storage silo.
4. the equipment described in claim 1, is characterized in that, described equipment also has power supply, and described power supply leads to described electroplating unit anode and described semiconductor device substrates sheet conductance to be deposited.
5. the equipment described in claim 1, is characterized in that, described equipment also has cleaning unit, and described cleaning unit is used for cleaning and the described substrate of drying and described substrate holding unit.
6. the equipment described in claim 1, is characterized in that, described equipment also has detecting unit, and described detecting unit is for detecting the concentration of metal ion and organic compound in described electrolytic solution.
7. the equipment described in claim 1, is characterized in that, described equipment also has infiltration unit, and described infiltration unit is for infiltrating to be deposited of described substrate.
8. the equipment described in claim 1, is characterized in that, described equipment has electroplating unit described at least one.
9. the equipment described in claim 1, is characterized in that, described second loading stage loads substrate holding unit described at least one.
10. utilize a method for equipment according to any one of claim 1 to 9 electrochemical deposition of metal over the substrate, comprising:
Described substrate holding unit is vertically sent to described first loading stage from described fixing storage silo;
Described first loading stage upset, makes described substrate holding unit level and puts;
Described substrate is sent in described substrate holding unit by described first mechanical manipulator;
Described first loading stage upset, makes described substrate holding unit vertically put;
Described second loading stage rises and arrives delivering position;
Described substrate holding unit is delivered on described second loading stage from described first loading stage by described second mechanical manipulator;
Described second loading stage declines and drives described substrate holding unit to immerse described electrolytic solution;
Described wheelwork drives described substrate holding unit to move in a circle around described anode in described electroplating unit by described second loading stage;
Metal refining on to be deposited of described substrate;
Described second loading stage drives described substrate holding unit to stop operating in described electroplating unit;
Described second loading stage rises and arrives delivering position;
Described substrate holding unit is sent in described cleaning unit by described second mechanical manipulator;
Described substrate holding unit is also dry by cleaning in described cleaning unit;
Described substrate holding unit is sent on described first loading stage by described 3rd mechanical manipulator;
Described substrate sends back in described cassette of substrates by described first mechanical manipulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310252879.4A CN104233422A (en) | 2013-06-24 | 2013-06-24 | Device for depositing metal on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310252879.4A CN104233422A (en) | 2013-06-24 | 2013-06-24 | Device for depositing metal on substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104233422A true CN104233422A (en) | 2014-12-24 |
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ID=52222293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310252879.4A Pending CN104233422A (en) | 2013-06-24 | 2013-06-24 | Device for depositing metal on substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104233422A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112442725A (en) * | 2020-11-27 | 2021-03-05 | 京东方科技集团股份有限公司 | Electrochemical deposition equipment set and electrochemical deposition method |
| CN114746585A (en) * | 2019-12-24 | 2022-07-12 | Ykk株式会社 | Electroplating system |
-
2013
- 2013-06-24 CN CN201310252879.4A patent/CN104233422A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114746585A (en) * | 2019-12-24 | 2022-07-12 | Ykk株式会社 | Electroplating system |
| CN112442725A (en) * | 2020-11-27 | 2021-03-05 | 京东方科技集团股份有限公司 | Electrochemical deposition equipment set and electrochemical deposition method |
| CN112442725B (en) * | 2020-11-27 | 2024-05-24 | 京东方科技集团股份有限公司 | Electrochemical deposition apparatus set and electrochemical deposition method |
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Application publication date: 20141224 |