CN104230341B - Ultralow dielectric microwave dielectric ceramic K 2snW 4o 15 - Google Patents
Ultralow dielectric microwave dielectric ceramic K 2snW 4o 15 Download PDFInfo
- Publication number
- CN104230341B CN104230341B CN201410501868.XA CN201410501868A CN104230341B CN 104230341 B CN104230341 B CN 104230341B CN 201410501868 A CN201410501868 A CN 201410501868A CN 104230341 B CN104230341 B CN 104230341B
- Authority
- CN
- China
- Prior art keywords
- hours
- microwave
- dielectric ceramic
- dielectric
- snw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a kind of ultralow dielectric microwave-medium ceramics K of near-zero resonance frequency temperature coefficient
2snW
4o
15and preparation method thereof.(1) be 99.9%(weight percent by purity) more than K
2cO
3, SnO
2and WO
3starting powder press K
2snW
4o
15composition weigh batching; (2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry; (3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 820 ~ 840 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.Pottery prepared by the present invention is good at 820 ~ 840 DEG C of sintering, and specific inductivity reaches 7.4 ~ 8.2, and its quality factor q f value is up to 57100-59600GHz, and temperature coefficient of resonance frequency nearly zero, industrially has great using value.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic dielectric substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε
rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ to reduce noise, general requirement Qf>=3000GHz; (3) the temperature factor τ of resonant frequency
?little of as far as possible to ensure the thermostability that device has had, general requirement-10ppm/ DEG C≤τ
?≤+10ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO
2microwave dielectric filter, but its temperature coefficient of resonance frequency τ
?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε
rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al
2o
3-TiO
2, Y
2baCuO
5, MgAl
2o
4and Mg
2siO
4deng, its ε
r≤ 20, quality factor q × f>=50000GHz, τ
?≤ 10ppm/ ° of C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε
rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta
2o
5, BaO-ZnO-Ta
2o
5or BaO-MgO-Nb
2o
5, BaO-ZnO-Nb
2o
5system or the composite system MWDC material between them.Its ε
r=25 ~ 30, Q=(1 ~ 2) × 10
4(under f>=10GHz), τ
?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz as dielectric resonance device.
(3) medium ε
rwith the microwave dielectric ceramic of Q value, mainly with BaTi
4o
9, Ba
2ti
9o
20(Zr, Sn) TiO
4deng the MWDC material for base, its ε
r=35 ~ 40, Q=(6 ~ 9) × 10
3(under f=3 ~-4GHz), τ
?≤ 5ppm/ ° of C.Be mainly used in microwave military radar in 4 ~ 8GHz range of frequency and communication system as dielectric resonance device.
(4) high ε
rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln
2o
3-TiO
2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li
2o-Ln
2o
3-TiO
2series, lead base series material, Ca
1-xln
2x/3tiO
3be contour ε
rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2o
3-TiO
2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperatureCo-firedCeramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic
rwith Qf and τ
?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot production application.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.Such as described in currently available technology can low-temperature sintering ultralow dielectric microwave dielectric ceramic usually because its temperature coefficient of resonance frequency is bigger than normal and cannot practical (scope of the temperature coefficient of resonance frequency of this type of microwave dielectric ceramic is generally τ in negative direction
?≤-30ppm/ DEG C).Explore and low-temperature sintering can have near-zero resonance frequency temperature coefficient (-10ppm/ DEG C≤τ with exploitation simultaneously
?≤+10ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the ultralow dielectric microwave dielectric ceramic of higher figure of merit (Q × f>=50000GHz).
Summary of the invention
The object of this invention is to provide one, under microwave frequency band, there is near-zero resonance frequency temperature coefficient and low-dielectric loss, simultaneously low temperature sintering ultralow dielectric microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is K
2snW
4o
15.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than K
2cO
3, SnO
2and WO
3starting powder press K
2snW
4o
15composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 820 ~ 840 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Pottery prepared by the present invention is good at 820 ~ 840 DEG C of sintering, and specific inductivity reaches 7.4 ~ 8.2, its temperature coefficient of resonance frequency τ
?nearly zero, temperature stability is good; Quality factor q f value is up to 57100-59600GHz, the manufacture of the microwave devices such as various radio ceramics substrate, resonator and wave filter can be widely used in, the technology needs of low temperature co-fired technology and microwave multilayer device can be met, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrates, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:
Claims (1)
1. can low-temperature sintering and there is the ultralow dielectric microwave dielectric ceramic of near-zero resonance frequency temperature coefficient, it is characterized in that the chemical constitution of described microwave dielectric ceramic is: K
2snW
4o
15;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be 99.9%(weight percent by purity) more than K
2cO
3, SnO
2and WO
3starting powder press K
2snW
4o
15composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 820 ~ 840 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410501868.XA CN104230341B (en) | 2014-09-27 | 2014-09-27 | Ultralow dielectric microwave dielectric ceramic K 2snW 4o 15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410501868.XA CN104230341B (en) | 2014-09-27 | 2014-09-27 | Ultralow dielectric microwave dielectric ceramic K 2snW 4o 15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104230341A CN104230341A (en) | 2014-12-24 |
CN104230341B true CN104230341B (en) | 2015-11-18 |
Family
ID=52219359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410501868.XA Active CN104230341B (en) | 2014-09-27 | 2014-09-27 | Ultralow dielectric microwave dielectric ceramic K 2snW 4o 15 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104230341B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103159477A (en) * | 2013-04-02 | 2013-06-19 | 桂林理工大学 | Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof |
CN103435348A (en) * | 2013-09-05 | 2013-12-11 | 桂林理工大学 | Low-temperature sintered microwave dielectric ceramic Sr8CuW3O18 and preparation method thereof |
CN103449814A (en) * | 2013-09-05 | 2013-12-18 | 桂林理工大学 | Low-temperature-sintering available microwave dielectric ceramic Sr2WCuO6 |
CN103922719A (en) * | 2014-04-09 | 2014-07-16 | 桂林理工大学 | Low-temperature sintering available microwave dielectric ceramic TiP2O7 with ultralow dielectric constant and preparation method thereof |
CN104003722A (en) * | 2014-05-24 | 2014-08-27 | 桂林理工大学 | Ultralow-dielectric constant microwave dielectric ceramic Li3AlV2O8 capable of being sintered at low temperature and preparation method thereof |
-
2014
- 2014-09-27 CN CN201410501868.XA patent/CN104230341B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103159477A (en) * | 2013-04-02 | 2013-06-19 | 桂林理工大学 | Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof |
CN103435348A (en) * | 2013-09-05 | 2013-12-11 | 桂林理工大学 | Low-temperature sintered microwave dielectric ceramic Sr8CuW3O18 and preparation method thereof |
CN103449814A (en) * | 2013-09-05 | 2013-12-18 | 桂林理工大学 | Low-temperature-sintering available microwave dielectric ceramic Sr2WCuO6 |
CN103922719A (en) * | 2014-04-09 | 2014-07-16 | 桂林理工大学 | Low-temperature sintering available microwave dielectric ceramic TiP2O7 with ultralow dielectric constant and preparation method thereof |
CN104003722A (en) * | 2014-05-24 | 2014-08-27 | 桂林理工大学 | Ultralow-dielectric constant microwave dielectric ceramic Li3AlV2O8 capable of being sintered at low temperature and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN104230341A (en) | 2014-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104261825B (en) | Low temperature sintering ultralow dielectric microwave-medium ceramics Li 3biW 8o 27 | |
CN104311017B (en) | A kind of vanadium base temperature-stable low-temperature sintered microwave dielectric ceramic and preparation method thereof | |
CN104311031B (en) | Low temperature sintering dielectric constant microwave ceramic medium Ca 3y 4v 2o 14 | |
CN105294075A (en) | High-quality-factor temperature-stable microwave dielectric ceramic Li2ZnGe2O6 and preparation method thereof | |
CN104261826B (en) | Ultralow dielectric microwave dielectric ceramic ZnY 3vO 8 | |
CN104311008B (en) | Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic BaNb 4v 2o 16and preparation method thereof | |
CN104261832B (en) | Low temperature sintering ultralow dielectric microwave-medium ceramics BaY 4v 2o 12 | |
CN104291807B (en) | The dielectric constant microwave ceramic medium Ag of near-zero resonance frequency temperature coefficient 3liTi 2o 6 | |
CN104311020B (en) | A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof | |
CN104311022B (en) | Ultralow dielectric microwave dielectric ceramic Li 2bi 3v 7o 23and preparation method thereof | |
CN104291820B (en) | The dielectric constant microwave ceramic medium AgNb of near-zero resonance frequency temperature coefficient 5bi 2o 16 | |
CN104261824B (en) | Low temperature sintering ultralow dielectric microwave dielectric ceramic Bi 2znW 3o 13 | |
CN104261827B (en) | Low temperature sintering dielectric constant microwave ceramic medium Bi 2mgW 5o 19 | |
CN104311019B (en) | A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof | |
CN104311025B (en) | A kind of ultralow dielectric microwave dielectric ceramic MgSi 4v 6o 24and preparation method thereof | |
CN104446379B (en) | A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof | |
CN104446446B (en) | A kind of low temperature sintering medium dielectric constant microwave medium microwave dielectric ceramic and preparation method thereof | |
CN104370544B (en) | Low temperature sintering temperature-stable ultralow dielectric microwave dielectric ceramic | |
CN105218084A (en) | Dielectric constant microwave dielectric ceramic Li 4ba 2biV 3o 13and preparation method thereof | |
CN105503157A (en) | Temperature-stabilization type low-dielectric-constant microwave dielectric ceramic Ba3Li2Ge2O8 and preparation method thereof | |
CN104844209A (en) | Temperature-stable low-dielectric constant microwave dielectric ceramic Li2NdV5O15 | |
CN104311028B (en) | Ultralow dielectric microwave dielectric ceramic Li 3ndWO 6and preparation method thereof | |
CN104230340B (en) | Low temperature sintering dielectric constant microwave ceramic medium Ba 5znW 3o 15 | |
CN104261830B (en) | Temperature-stable ultralow dielectric microwave dielectric ceramic BaBi 2w 6o 22 | |
CN104311027B (en) | Ultralow dielectric microwave dielectric ceramic Li 4siWO 7and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201202 Address after: Room 201, building 5, Bailian innovation and Technology Industrial Park, 16 Xiaguang Avenue, Xingtang sub district office, Linquan County, Fuyang City, Anhui Province Patentee after: Fuyang Shenbang New Material Technology Co., Ltd Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |
|
TR01 | Transfer of patent right |