CN104218135A - Solid-state transmitter packaging, multi-pixel transmission packaging and LED display - Google Patents
Solid-state transmitter packaging, multi-pixel transmission packaging and LED display Download PDFInfo
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- CN104218135A CN104218135A CN201310208431.2A CN201310208431A CN104218135A CN 104218135 A CN104218135 A CN 104218135A CN 201310208431 A CN201310208431 A CN 201310208431A CN 104218135 A CN104218135 A CN 104218135A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
This invention discloses solid-state transmitter packaging, multi-pixel transmission packaging and an LED display. The solid-state transmitter packaging includes: multiple pixelseach of which has at least one solid-state transmitter; and a common substrate that transmits the electric signals used for controlling the light-emitting of the first pixel and the second pixel of the mentioned pixels. The packaging of this invention provides such advantages of reducing the cost and interconnection complexity of the packaging and the display.
Description
Technical field
The present invention relates to LED package and utilize LED package as the display of its light source.
Background technology
Light-emitting diode (LED) is the solid-state device converting electric energy to light, generally includes the active layer of the semi-conducting material between one or more layer being interposed in phase contra-doping.When applying bias voltage on doped layer, hole and be electronically injected in active layer, hole and electronics reconfigure to produce light at active layer.Light sends from active layer and sends from all surface of LED.
Nearly ten years or longer time since technical development created the LED with the more emission effciency of small footprint size, increase and the cost of reduction.Compared with other reflectors, LED also has the working life of increase.Such as, the working life of LED can more than 50,000 hour, and the working life of incandescent lamp bulb is approximately 2,000 hour.LED also comparable other light sources is firmer and consume less power.Due to these reasons and other reasons, LED becomes more popular, and, use in increasing application scenario now, and traditionally, these application scenarios are fields of incandescent lamp, fluorescent lamp, Halogen lamp LED and other reflectors.
In order to use LED chip in traditional application scenario, known by LED chip encapsulating in a package, to provide environment and/or mechanical protection, color selecting, convergence of rays etc.LED also comprises electric lead, contact or trace, is electrically connected with external circuit for by LED.In the typical two pin LED/elements 10 shown in Fig. 1, by solder joints or conductive epoxy resin, single led chip 12 is arranged on reflector 13.The ohm contact of LED chip 12 is connected with lead-in wire 15A and/or 15B by one or more wire bonds 11, and lead-in wire 15A and/or 15B can be attached to reflector 13 or form entirety with reflector.Reflector 13 filled by available encapsulant 16, and, on LED chip or in the seal, can material for transformation of wave length be comprised, such as phosphor.The light that LED sends under first wave length can be absorbed by phosphor, and phosphor responsively can send the light of second wave length.Then, by whole component package in transparent protection resin 14, this protection resin can may be molded as the shape of lens, to guide the light that sends from LED chip 12 or to make this light be shaped.
Traditional LED 20 shown in Fig. 2 can be more suitable for high power operation, and it can produce more heats.In LED 20, be arranged on carrier by one or more LED chip 22, described carrier is printed circuit board (PCB) (PCB) carrier, substrate or base station (submount) 23 such as.The solid metal reflector 24 be installed on base station 23 surrounds LED chip 22, and is reflected away from encapsulation 20 by the light sent by LED chip 22.Reflector 24 also provides mechanical protection to LED chip 22.Ohm contact on LED chip 22 forms one or more wire in conjunction with connecting portion 21 on base station 23 between electric trace 25A, 25B.Then, cover the LED chip 22 installed with sealant 26, sealant can provide environment and mechanical protection to chip, is also used as lens simultaneously.Typically, combined by welding or epoxy resin, solid metal reflector 24 is attached to carrier.
Fig. 3 shows another kind of LED 30, and it comprises housing 32 and is embedded in the lead frame 34 in housing 32 at least in part.The surface that lead frame 34 is arranged as encapsulating 30 is installed.By the part of the cavity exposed leads frame 34 in housing 32, wherein three LED36a-c be arranged on lead frame 34 part on and be connected to other parts of lead frame by wire bonds 38.Dissimilar LED36a-c can be used, some of them encapsulation have glow, the LED of green light and blue light-emitting.Encapsulation 30 comprises the pin efferent structure with six pins 40, and lead frame is arranged so that the luminescence controlling each LED36a-c by corresponding a pair pin 40 independently.This allows this encapsulation to send the combination of shades of colour from LED36a-c.
Available different LED (such as shown in Fig. 1 to Fig. 3 those) is as the light source of mark and display (large with little).The display (being usually called giant screens) comprising big screen LED is just becoming more general at multiple indoor and outdoor location, such as, in stadium, runway, concert, and in large-scale common area, such as, in the Times Square of New York.By current technology, these displays of part or screen can greatly to 60 feet high 60 feet wide.Along with technical development, estimate screen larger for exploitation.
These screens can comprise millions of or hundreds thousand of " pixel " or " picture element module ", eachly comprise one or more LED chip or encapsulation.Picture element module can use the LED chip of high efficiency and high brightness, and its permission can see display from place relatively far away, or even by day when being subject to sunlight.In some marks, each pixel can have a LED chip, picture element module can have few to three or four LED(such as, a redness, a green, a blueness), it allows pixel from the combination of ruddiness, green glow and/or blue light, send the light of multiple different colours.Can be arranged in square-grid by picture element module, it can comprise hundreds thousand of LED or LED.In the display of a type, grid can be that 640 wide 480 modules of module are high, and the size of screen depends on the actual size of picture element module.When the quantity of pixel increases, the interconnect complexity of display also increases.This interconnect complexity can be one in the capital expenditure of these displays, and, can be in originating with the major failure in the working life process of display in manufacture process.
Summary of the invention
The present invention relates to the light-emitting diode display of emitter package and this encapsulation of use, is the cost and the interconnect complexity that reduce display by this package arrangement.Some encapsulation execution modes are arranged as multiple display pixel is provided in a package, the cost of each pixel is reduced, and simplifies the Design and manufacture of the display using this encapsulation.
The execution mode that soild state transmitter according to the present invention encapsulates comprises multiple pixel, and each pixel has at least one soild state transmitter.Comprise the shared base station for transmitting the signal of telecommunication, to control the luminescence of the first pixel and to control the luminescence of the second pixel.
An execution mode according to many pixel light emission encapsulation of the present invention comprises the housing with multiple cavity, and each cavity has at least one LED.Comprise and form overall lead frame structure with housing, at least one LED described of each cavity is mounted to lead frame structure.This encapsulation can receive the signal of telecommunication for controlling the luminescence coming from the first and second cavitys.
An execution mode according to light-emitting diode display of the present invention comprises multiple LED, and the plurality of LED is relative to each other installed, to produce message or image.At least some LED in described LED comprises multiple pixel, and each pixel has at least one LED.Each encapsulation can receive the signal of telecommunication of the luminescence for controlling at least the first and second pixels in described pixel.
From following the detailed description and the accompanying drawings, these and other aspects of the present invention and advantage will become apparent, and accompanying drawing shows feature of the present invention by example.
Accompanying drawing explanation
Fig. 1 is a kind of end view of traditional LED package;
Fig. 2 is the end view of another traditional LED package;
Fig. 3 is the plane graph of another traditional LED package;
Fig. 4 is the plane graph of an execution mode according to LED of the present invention;
Fig. 5 is the end view of the LED shown in Fig. 4;
Fig. 6 is the opposite side view of the LED shown in Fig. 4;
Fig. 7 is the plane graph of an execution mode according to light-emitting diode display of the present invention;
The schematic diagram of the interconnection between Fig. 8 shows according to the LED in a LED of the present invention;
Fig. 9 is the plane graph of another execution mode according to LED of the present invention;
The schematic diagram of the interconnection between Figure 10 shows according to the LED in another LED of the present invention;
Figure 11 is the plane graph of another execution mode according to LED of the present invention;
Figure 12 is the plane graph of another execution mode according to LED of the present invention;
Figure 13 is the plane graph of another execution mode according to LED of the present invention;
Figure 14 is the plane graph of the another execution mode according to LED of the present invention;
Figure 15 is the plane graph of an execution mode according to light-emitting diode display of the present invention;
Figure 16 is the plane graph of another execution mode according to light-emitting diode display of the present invention;
Figure 17 is the perspective view of another execution mode according to LED of the present invention;
Figure 18 is the plane graph of the LED of the LED do not illustrated within the pixel shown in Figure 17;
Figure 19 is the plane graph of a pixel in the LED of Figure 17 and Figure 18;
Figure 20 is the end view of the LED cut open along hatching 20-20 shown in Figure 17 and Figure 18;
Figure 21 is the bottom view of the LED shown in Figure 17 and Figure 18;
Figure 22 is the end perspective view of the LED shown in Figure 17 and Figure 18;
Figure 23 is another bottom view with the LED that a pin numbering is arranged shown in Figure 17 and Figure 18;
Figure 24 is the schematic diagram of an execution mode according to the pin mark in an execution mode of LED of the present invention;
The schematic diagram of the interconnection between Figure 25 shows according to the LED in LED of the present invention, this LED utilizes the pin shown in Figure 24 to mark;
Figure 26 is the plane graph of another execution mode according to light-emitting diode display of the present invention;
Figure 27 is the plane graph of another execution mode according to light-emitting diode display of the present invention.
Embodiment
The present invention relates to the LED of improvement and use the light-emitting diode display of this LED, LED according to the present invention to comprise " many pixels " encapsulation.That is, this encapsulation comprises more than one pixel, and each pixel comprises one or more light-emitting diode.Different execution modes comprises the different characteristic for applying the signal of telecommunication to the LED in pixel.In some embodiments, can apply the corresponding signal of telecommunication to each pixel, to control its glow color and/or intensity, and in other embodiments, the available identical signal of telecommunication controls two or more pixels.Have in the execution mode of multiple LED in pixel, the one or more LED in each pixel of available corresponding signal controlling, and in other embodiments, the LED in available identical signal controlling different pixels.In some execution modes in these embodiments, the luminescence of two or more pixels can be controlled with identical signal, and in other embodiments, each pixel can be controlled with corresponding signal.
In some embodiments, term pixel is interpreted as in its its ordinary meaning the element of the image that can process separately in the display system or control.In some execution modes in these embodiments, some or all of pixel can comprise glow, the LED of green light and blue light-emitting, at least some in pixel is arranged to and allows the intensity of each LED in pixel to control.This allows each pixel to send a kind of light of color, and it is the combination of ruddiness, green glow or blue light, and allows flexibility when driving each pixel, and make it can send different colors, described different color is the combination of the light from LED.
In other embodiments, this encapsulation can comprise the pixel of the light that can send single color, and these are encapsulated in different application scenarios and use, such as, and illumination or backlight.In some execution modes in these embodiments, pixel can send white light, and can comprise the blue led that at least one has one or more phosphor, and this LED sends the white light combination of blue light and phosphorescence.Different execution modes in these execution modes can allow each LED controlled in each pixel, and in other embodiments, available identical drive singal driving LED.In some embodiments, pixel can comprise one or more LED emitted white light, and it is with the LED combination glowed, to realize desired pixel light emission, such as, and required colour temperature.In other embodiments, the luminescence of the LED in pixel can be controlled like this, make pixel send different colour temperatures in cold temperature to the scope of hot temperature.
Multiple different shape and size can be had according to encapsulation of the present invention, and the pixel with multiple varying number can be arranged to.In some embodiments, this encapsulation can be foursquare, and can have the pixel of the form of 2 × 2,4 × 4,8 × 8 etc.In other embodiments, this encapsulation can be rectangular shape, and pixel can have pixel on the direction form fewer than the pixel on other direction.Such as, this encapsulation can have the pixel form of 2 × 3,2 × 4,2 × 5,2 × 6 etc., 3 × 4,3 × 5,3 × 6,3 × 7 etc. or 4 × 5,4 × 6,4 × 7,4 × 8 etc.In other execution mode, pixel can be formed as pixel linear array, and the length of this linear array is 2,3,4,5 etc.These be only encapsulation shape a part, other be triangle, circle or irregularly shaped.
LED according to the present invention provides the special advantage being better than the encapsulation of prior art single pixel.This LED, by reducing material cost (such as, lead frame material), makes the cost of every pixel lower.While maintenance lambert beam profile, also can reduce the spacing between neighbor.By reducing the spacing between pixel, more high-resolution display can be manufactured.Also by reducing the cost of processing cost and pickup and placing modules, reduce display manufacturing cost.Also can reduce the complexity of pixel interconnection, thus reduce material cost and display manufacturing level.This also can reduce the possible interconnection that there will be fault along with the useful life of display.
The present invention can relate to multiple different encapsulated type, and some execution modes are below surface mounted devices.Should be understood that the present invention also can be used for other encapsulated types, such as, there is the encapsulation of the pin for through hole mounting process.
In LED mark and display, can use according to LED of the present invention, it should be understood that, it can be used in multiple different application scenario.This LED can defer to different industry standards, is suitable in LED-based mark, channel letter illumination or general backlight and illumination application to make it.Some execution modes also can comprise and make its compatibility with the flat-top surface of emission mated with light pipe.These are only oneself according to the several application in the multiple different application occasion of LED of the present invention.
LED execution modes more according to the present invention can comprise single LED chip or many LED chips, and can comprise the reflector surrounding this single LED chip or many LED chips.The upper surface of the housing around each reflector can comprise the material contrary with the material of the light sent by LED chip.The reflecting surface be exposed in the part of the housing in cup and/or cup also can comprise the material that reflection comes from the light of LED chip.In some execution modes in these embodiments, the light sent from LED chip can be the light of white light or other wavelength convert, further, the surface of the base station in reflector and the reflecting surface of cup can be white, or the light of otherwise reflected white-light or wavelength convert.(contrasting, relative) upper surface of the contrast of reflector can be multiple different color, but in some embodiments, it can be black.
Describe the present invention with reference to some execution mode herein, however, it should be understood that, the present invention can multiple different form implement, and, should be interpreted as being limited to the execution mode of setting forth here.Especially, except those above-mentioned embodiments, multiple different LED chip, reflector and lead frame can be provided to arrange, and sealant can provide further feature to improve reliability and the characteristics of luminescence of the light-emitting diode display of LED and this LED of use.Although the different execution modes of LED discussed here are used in light-emitting diode display, LED can be used in multiple different illuminations application.
The element that should also be understood that when such as layer, region or substrate is called as when being positioned on another element, and it can be located immediately on this another element, or also may there is insertion element.In addition, the relational terms of " in ... top " and " in ... below " and similar term may be used such as here to describe the relation in a layer or another region.Should be understood that these terms are intended to comprise the different directions except the direction shown in figure of device.
Although here can with term first, second etc. various element, parts, region, layer and/or part are described, these elements, parts, region, layer and/or part should not be limited to these terms.These terms are only used for an element, parts, region, layer or part and another region, layer or part to distinguish.Therefore, under prerequisite without departing the teaching of the invention, the first element discussed below, parts, region, layer or part also can be called the second element, parts, region, layer or part.
Here, describe embodiments of the present invention with reference to cross-sectional illustration, this diagram is the schematic diagram of embodiments of the present invention.Similarly, the actual (real) thickness of these layers can be different, and estimates such as different from illustrated shape due to the result of manufacturing technology and/or tolerance.Embodiments of the present invention should be interpreted as the special shape being limited to shown here region, but should comprise such as by manufacturing the form variations produced.Due to normal manufacturing tolerance, the region illustrating or be described as square or rectangle will typically have fillet or bending features.Therefore, the region shown in figure is schematic in essence, and its shape is not intended to the accurate shape in the region that device is shown, nor is intended to limit the scope of the invention.
Fig. 4 to Fig. 7 shows an execution mode according to many pixels emitter package 50 of the present invention, and wherein Fig. 7 illustrates in greater detail the pixel reflector that can use according to certain embodiments of the present invention.This encapsulation comprises the pixel 52a-d that four are arranged as 2 × 2 forms or layout, and encapsulation 50 has usual foursquare floor space.Encapsulation 50 can comprise the feature for different installation method, and wherein illustrated embodiment has the feature allowing surface to install.That is, encapsulation 50 comprises surface mounted device (SMD), and it has pin and lead frame structure, and wherein pin efferent is arranged such that to utilize surface mounting technology encapsulation to be mounted to structure (such as, printed circuit board (PCB) (PCB)).As mentioned above, should be understood that except SMD, the present invention also can be applicable to other emitter package types, and such as, pin installs emitter package.Encapsulation 50 comprises housing or base station 54, the lead frame 56 of this housing or base station carrying entirety.Lead frame 56 comprises multiple conductive connection part, and the plurality of conductive connection part is used for by electrical signal conduction to the optical transmitting set encapsulated, and with helping disperse the heat produced by reflector.
Housing or base station (housing) 54 can being combined to form by multiple different material or material, and, different materials can be had in different parts.Acceptable case material is an electric insulation, such as, and dielectric material.Housing 54 can comprise pottery at least in part, such as aluminium oxide, aluminium nitride, carborundum or polymeric material (such as polyimides and polyester).In some embodiments, housing 54 can comprise the dielectric material with relatively high thermal conductivity, such as, and aluminium nitride and aluminium oxide.In other embodiments, base station 54 can comprise printed circuit board (PCB) (PCB), sapphire or silicon or any other suitable material, and such as, the thermal insulation backing material of plating T, can obtain from the Bergquist company of Minnesota State Chanhassen.For PCB execution mode, different PCB types can be used, such as, the printed circuit board (PCB) of the FR-4PCB of standard, metal-cored PCB or any other type.
Lead frame 56 can be arranged in a number of different manners, and in different encapsulation execution modes, the part of varying number can be used.Pixel can have identical one or more reflectors, such as LED, and in some embodiments, different pixels can have the LED of varying number.As illustrated best in Fig. 7, each pixel in encapsulation 50 all can comprise three LED58a-c, and in the illustrated embodiment, lead frame 56 is arranged as and applies the signal of telecommunication to LED58a-c.Lead frame 56 comprises conductive pieces, for will from encapsulation installed surface (such as PCB) electrical signal conduction to LED58a-c.Lead frame also can comprise such feature, that is, this feature can include LED to be provided to the extra hot path installed stability and be provided for the heat dispersed from reflector.Lead frame also can comprise physical features, such as, hole, otch etc., to increase stability and the reliability of encapsulation, and, in some embodiments, help the waterproof sealing between holding member.Authorizing the U.S. Patent application the 13/192nd of by name " encapsulation of Water Resistant Surface Mount Device Package(water-proof surface installing device) " of the people such as Chan, describe the feature that these are different in No. 293, the full content of this U.S. Patent application is incorporated herein by reference.
By punching press, injection moulding, cutting, etching, bend or realize desired structure by the combination of other known methods and/or these methods, thus realizing the manufacture of lead frame 56.Such as, conductive pieces can by partly metal stamping (such as, simultaneously from the punching press of monolithic associated materials), suitably bending and be separated completely or formed housing a part or all after be separated completely.
Lead frame 56 can be made up of conducting metal or metal alloy (such as, copper, copper alloy) and/or the combination of other suitable low resistance, resistant material or these materials.As mentioned above, the thermal conductivity of lead-in wire may help to a certain extent from LED58a-c conduct heat away.
Housing 54 can have multiple different shape and size, and in the embodiment shown, normally square or rectangle, has upper surface 60 and lower surface 62(illustrates in fig. 5 and fig. best) and the first and second side surfaces 64 and 66.The top of housing comprises groove or cavity 72 further, and described groove or cavity stretch into the body of housing 54 from upper surface 60, arrive lead frame 56.The LED58a-c of each pixel is arranged on the lead frame 56 in a corresponding cavity 72, and the light from LED is sent from encapsulation 50 by cavity 72.Each cavity 72 can have angled side surface, and described angled side surface forms reflector around LED58a-c, to help the light of reflector to reflex to outside encapsulation 50.In some embodiments, can along the location at least partially of the side surface 74 of cavity 72 and fixation reflex insert or ring (not shown).The reflection efficiency of ring and the angle of departure of encapsulation is increased by making cavity 72 be tapered, and, towards the inside load-carrying ring in the inside of housing in cavity.By example, the angle of reflection of about 50 degree provides suitable reflectivity and visual angle.
In some embodiments, gap filling material (or sealant) filled chamber 72 at least in part, this packing material can protect lead frame 56 and LED58a-c, and lead frame and LED are stablized in position.In some embodiments, packing material may cover the part exposed by cavity 72 of reflector and lead frame 56.Packing material can be chosen as and have predetermined optical characteristics, to strengthen the light from LED projection, and in some embodiments, packing material is transparent substantially for the light launched by the reflector encapsulated.Packing material can also be flat, makes itself and upper surface 60 in approximately identical plane, or, it can be made to be shaped with the form of lens, such as, hemisphere or bullet shaped.Alternatively, packing material can completely or partially be recessed in one or more cavity 72.Packing material may by resin, epoxy resin, thermoplastic condensed polymer, glass, and/or being combined to form of other suitable materials or these materials.In some embodiments, material can be increased to packing material, to strengthen towards LED and/or to come from the transmitting of light of LED, absorption and/or diffusion.
Housing 54 can by preferably electric insulation and the material of heat conduction make.This material is well-known in the art, can include but not limited to some pottery, resin, epoxy resin, thermoplastics, condensation polymer (such as, polyphthalamide (PPA)) and glass.Encapsulation 50 and housing 54 thereof can be formed by any one in multiple method as known in the art and/or assemble.Such as, can be formed around lead frame or molded shell 54, such as, pass through injection moulding.Alternatively, can form housing in some parts (such as top and bottom), wherein conductive pieces is formed on bottom.Then, known method and material (such as, by epoxy resin, adhesive or other suitable grafting materials) can be utilized to be combined in top and bottom.
Multiple different reflector can be used according to encapsulation of the present invention, wherein encapsulate 50 and use LED58a-c.Different execution modes can have the different LED chip of the light sending different colours, and, in the illustrated embodiment, each pixel in encapsulation 50 comprise glow, the LED chip of green light and blue light-emitting, these LED chips can produce the luminescence (comprising white light) of the combined colors of multiple different wave length.
LED chip structure, feature and its manufacture and operation are usually known in the art, only discuss briefly here.LED chip can have the multiple different semiconductor layer arranged by different way, and can send different colors.Available known method manufactures these layers of LED chip, and a kind of suitable method uses metal organic chemical vapor deposition (MOCVD) manufacture.These layers of LED chip generally include the active layer/region between the epitaxial loayer being interposed in the first and second phase contra-dopings, and all these active layer/regions are formed on growth substrates or wafer continuously.The LED chip be formed on wafer by individualized (singulated is separated), and can be used for different application scenarios, such as, installs in a package.Should be understood that grown substrate/wafer can keep the part as finally individualized LED chip, or the substrate grown completely or partially can be removed.
Should also be understood that and also can comprise extra layer and element in LED chip, described extra layer and element include but not limited to resilient coating, nucleating layer, contact layer and current distribution layer and light-extraction layer and element.Active region can comprise single quantum well (SQW), Multiple Quantum Well (MQW), double-heterostructure or superstructure.
Active region and doped layer may be made up of different material systems, and this system is the material system based on group III-nitride.Group III-nitride refers to those semiconducting compounds formed between nitrogen and the III element (normally aluminium (Al), gallium (Ga) and indium (In)) of periodic table.This term also refers to ternary and quaternary compound, such as, and aluminium gallium nitride alloy (AlGaN) and aluminum indium gallium nitride (AlInGaN).In a preferred embodiment, doped layer is gallium nitride (GaN), and active region is InGaN.In an alternative embodiment, doped layer can be AlGaN, aluminum gallium arsenide (AlGaAs) or arsenide phosphide gallium aluminium indium (AlGaInAsP) or AlGaInP (AlInGaP) or zinc oxide (ZnO).
The substrate/wafer grown can be made of a variety of materials, such as, silicon, glass, sapphire, carborundum, aluminium nitride (AlN), gallium nitride (GaN), wherein suitable substrate is the 4H polytype of carborundum, although also other silicon carbide polytype can be used, comprise 3C, 6H and 15R polytype.Carborundum has some advantages, such as, compared with sapphire, and the lattice more mated with group III-nitride, and generation has higher-quality group III-nitride film.Carborundum also has very high thermal conductivity, make the gross output of the III-nitride device on carborundum can't help substrate heat dissipation restriction (situation as some devices be formed on sapphire is identical).SiC substrate can obtain from the Cree Research Inc. of Durham, North Carolina, and, in scientific literature and at United States Patent (USP) Re34,861; 4,946,547 and 5,200, set forth its manufacture method in No. 022.LED also can comprise extra feature, and such as, conductive current distributed architecture and current distribution layer, all these can be made up of the known materials depositing with known method.
LED58a-c can be mounted to lead frame 56, and be electrically coupled with lead frame 56 by the bond material (such as, solder, adhesive, coating, film, sealant, slurry, lubricating oil and/or other suitable materials) of conductive and heat-conductive.In a preferred embodiment, can with the weld pad on bottom LED LED electrical be coupled and be fixed to its corresponding liner, make to cannot see solder from top.The wire bonds 74(Fig. 7 extended between LED58a-c and lead frame 56 can be included in shown).
Different execution mode of the present invention can have different pin efferent and arrange, this layout can be depending on different factors, such as, and the separation on each LED in the quantity of LED, the interconnection of LED and each pixel and/or pixel and the independent level controlled.Fig. 7 shows the encapsulation 50 in its pin efferent structure with 8 pins 76, and Fig. 8 shows an execution mode according to interconnection structure 80 of the present invention, and it can utilize the pin efferent of 8 pins.Interconnection structure 80 shows four pixel 52a-d, and each pixel comprises three LED58a-c, and the electrical connection between LED58a-c provides by the wire bonds 74 shown in lead frame 56 and/or Fig. 7.The signal of telecommunication V1 and V2 on pin provides the power of driving LED, wherein V1 driving first and the 3rd pixel 52a, 52c, and V2 drives another two pixel 52b, 52d.The signal of telecommunication R1, G1 and B1 on pin control the luminescence of the LED58a-c in the first two pixel 52a, 52b, and signal R2, G2 and B2 control the luminescence of the LED58a-c in latter two pixel 52c, 52d.This layout allows dynamically to control pixel 52a-d, and each pixel controls by the respective combination of driving and control signal.In the illustrated embodiment, V1, R1, G1 and B1 control the luminescence of the first pixel 52a, and V1, R2, G2 and B2 control the luminescence of the 3rd pixel 52c.Similarly, V2, R1, G1 and B1 control the luminescence of the second pixel 52b, and V2, R2, G2 and B2 control the luminescence of the 4th pixel 52d.
It should be understood that and different be encapsulated in the pin can in its pin efferent structure with varying number, and pixel and LED can interconnect in a number of different manners, this different mode is different lead frame structure and wire bonds.Fig. 9 shows another execution mode according to LED 100 of the present invention, and it also has four pixel 102a-d of 2 × 2 layouts.This encapsulation comprises housing 104 and lead frame 106 further, and each in housing and lead frame can with method same as described above and material manufacture.Each pixel 102a-d also can comprise one or more LED, described execution mode comprise three to above-mentioned similar LED108a-c.Encapsulation 100 also can comprise wire bonds 110, to provide electrical connection between the LED108a-c in lead frame 106 and pixel 102a-d.
Encapsulation 100 also comprises the pin efferent structure with 16 pin ones 12, and Figure 10 shows an execution mode according to interconnection structure 120 of the present invention, this execution mode can use the structure with 16 pin ones 12 and four pixels, as in the execution mode of Fig. 9.Interconnection structure 120 is provided by lead frame 106 and wire bonds 110, and allows the independent control of pixel 102a-d.That is, each pixel 102a-d has its oneself pin, to provide corresponding power signal, and has one group of pin, to provide control to the luminescence of the LED108a-c in its pixel.For pixel 102a, can provide power signal on pin V11, this signal controlling is arranged at the luminescence of the LED108a-c on pin R11, G11 and B11.For pixel 102b, V12 provides power, and provide LED to control on pin R12, G12 and B12.Similarly, provide power and control by V22, R22, G22 and B22 to pixel 102c, and provide power and control by V21, R21, G21 and B21 to pixel 102d.Compared with above-mentioned encapsulation 50, this arranges needs more pin one 12, but allows the luminescence correspondingly controlling each pixel 102a-d.These are only two kinds in the multiple different pin efferent and interconnection structure that can be provided by encapsulation according to the present invention.
As discussed above, except encapsulating 2 × 2 layouts shown in 50 and 100, multiple different matrix layout can be provided with according to encapsulation of the present invention.Figure 11 shows the encapsulation 130 of another execution mode, and it has six the pixel 132a-f arranged with 2 × 3 matrix layout.Figure 12 shows the encapsulation 140 of another execution mode, and it has eight the pixel 142a-h arranged with 2 × 4 matrix layout.Each encapsulation 130,140 comprises housing, and its lead frame, pin and wire bonds to above-described those are similar, but are arranged to the pixel of the larger quantity of adaptation.Each pixel also can comprise the LED of varying number, and as mentioned above, shown pixel has three LED.
Can also array or linear placement provide according to LED of the present invention.Figure 13 shows the LED 150 according to another embodiment of the present invention, and it has two the pixel 152a-b being arranged to 2 × 1 linear forms.Figure 14 shows the LED 160 according to another embodiment of the invention, and it has four the pixel 162a-d being arranged to 4 × 1 linear forms.Each encapsulation also comprises housing as above, lead frame, pin and wire bonds, and each pixel can comprise LED as above.
Multiple in above-mentioned LED can be installed together, to form display, the display of different size has the encapsulation of varying number.Figure 15 shows a part for display 170, and it has the LED 50 of 16 above-mentioned 2 × 2 that are surface-mounted to display panel 172.Encapsulation 50 has eight pins 76, and panel 172 can comprise interconnection, to allow dynamically to drive the pixel 52a-d in each encapsulation 50, as mentioned above.Panel can comprise the multiple different structure of arranging in a multitude of different ways, and one of them execution mode comprises the printed circuit board (PCB) (PCB) with conductive trace at least in part, and encapsulation be surface mounted into traces into electrical contact.Should be understood that typical display will have more kinds of encapsulation, to form display, some of them display has enough encapsulation to provide hundreds thousand of pixels.
Similarly, other above-mentioned encapsulation can be provided in the display.Figure 16 shows another part of display 180, and it has the LED 100 of 16 above-mentioned 2 × 2 that are surface-mounted to display panel 182.These encapsulation have 16 pins, and panel 182 can comprise interconnection, to allow to drive pixel 102a-d individually, as mentioned above.Panel 182 can comprise the PCB with conductive trace at least in part, and full screen monitor (full display) also can have more encapsulation 100.
By arranging multiple pixel on single package, can be closer to each other (that is, nearer spacing) by pixel arrangement, this can produce more high-resolution light-emitting diode display.Meanwhile, compared with encapsulating with the single pixel LED of use, many pixel encapsulation allow the complexity reducing light-emitting diode display.In some embodiments, LED can have the spacing of scope at 0.5 to 3.0mm, and in other embodiments, spacing can in the scope of 1.0 to 2.0mm.In other execution mode, the spacing between pixel is approximately 1.5mm.
This encapsulation also can have the floor space of different size according to the quantity of the pixel in encapsulation.LED 50,100 for above-mentioned 2 × 2, floor space can be square or rectangle, and the side of the floor space of some of them execution mode is in the scope of 2 to 6mm.In other embodiments, side can in the scope of 3 to 5mm.In some substantially foursquare execution mode, side can in the scope of 3 to 4mm, and in the execution mode of some general rectangular, and side can in the scope of 3 to 4mm, and another side can in the scope of 4 to 5mm.Should be understood that these are only some examples of the size according to LED of the present invention, and these sizes can increase pro rata with the increase of the quantity of the pixel in encapsulation.
Also can comprise the large square matrices layout of matrix layout than above-mentioned 2 × 2 according to the different execution modes of LED of the present invention, comprise 4 × 4,5 × 5,6 × 6 etc.Figure 17 to Figure 22 shows the LED 200 according to another embodiment of the present invention, and it comprises 16 pixels 202 of arranging with 4 × 4 matrix layout.Encapsulation 200 can comprise shown in housing 204, lead frame 206 and wire bonds 208(Figure 19), housing, lead frame are made up of the material identical with above-mentioned material by the method identical with said method with wire bonds.Each pixel also can comprise one or more LED, and similar to those pixels above-mentioned, illustrated embodiment has the pixel comprising three LED208a-c.
The different execution modes of encapsulation 200 can have the lead frame of the pin with varying number, and LED interconnects by lead frame and wire bonds in a different manner.In the illustrated embodiment, lead frame 206 comprises the pin efferent structure with 20 pin twos 10, as illustrated best in Figure 21 and Figure 22.Pin two 10 extends from the side surface of encapsulation, and bends in the below of housing 204, and install with the surface of providing convenience, such as, surface is installed on display panel.The bottom surface of encapsulation 200 also can comprise polarity indicator, can use described polarity indicator encapsulation to be arranged in suitable orientation by pickup and place machine.With reference now to Figure 21, in the corner of encapsulation 200, arrange the polarity indicator 212 of "+" shape, however, it should be understood that, polarity indicator can adopt multiple different shape, and can be in multiple different position.Such as, Figure 22 arranges leg-of-mutton polarity indicator 214 in the different corners of encapsulation 200.
With reference now to Figure 23,20 pin twos 10 have been labeled digital 1-20 around the periphery encapsulated.Figure 24 shows the function performed by the signal of telecommunication provided on different pin two 10.Represent pin one-4 with R1P, R2P, R3P and R4P, each pin provides power to the red LED in four pixels.Represent pin one 2-15 with GB1P, GB2P, GB3P and GB4P, each pin provides power to the green in four pixels and blue led.Represent pin 5-8 with R1, R2, R3 and R4, each pin controls the luminescence of the red LED in four pixels.Similarly, represent pin 9-11 and 16 with G1, G2, G3 and G4, each pin controls the luminescence of the green LED in four pixels.Finally, represent pin one 7-20 with B1, B2, B3 and B4, each pin controls the luminescence of the blue led in four pixels.
Figure 25 shows an execution mode of the interconnection 240 between the LED in the different pixels when using the mark of the pin efferent shown in Figure 24.Eachly be applied to pin one-4(R1P-R4P) the signal of telecommunication power is applied to the red LED 208a in corresponding one-row pixels 202, meanwhile, be applied to the luminescence of the red LED 208a in the signal controlling one row pixel 202 of pin 5-8.The layout of this row and column allows the luminescence controlling each red LED.Such as, the luminescence of the red LED R8 in the second row and secondary series can by putting on pin two (R2P) and pin 6(R2) the signal of telecommunication control.
Green and blue led 208b, 208c illumination can be controlled by similar method.Eachly be applied to pin one 2-15(GB1P-GB4P) the signal of telecommunication power is applied to the green in corresponding one-row pixels 202 and blue led 208b, 208c.Be applied to pin 9-11 and 16(G1-G4) the corresponding row pixel 202 of signal controlling in the luminescence of green LED 208b, and, be applied to pin one 7-20(B1-B4) the corresponding row pixel 202 of signal controlling in the luminescence of blue led 208c.The layout of this row and column allows to control each green and blue luminescence.Such as, by being applied to pin one 4(GB2P) and pin one 0(G2) the signal of telecommunication control in the second row and secondary series pixel in the luminescence of green LED G8.By being also applied to pin one 4(GB2P) and pin one 8(B2) the signal of telecommunication control in the second row and secondary series pixel in the luminescence of blue led B8.This interconnect arrangements is only the one in the multiple layout that can use according to the embodiment of the present invention.
Identical with above-mentioned encapsulation, the LED of multiple 4 × 4 can be installed together to form display, the display of different size has the encapsulation of varying number.Figure 26 shows an execution mode of a part for display or display 300, and it has the encapsulation 200 of 60 4 × 4, and these encapsulation are installed on display panel 302 with the layout of 6 × 10.Panel 302 can comprise the interconnection with the pin efferent structure of 20 of encapsulation 200 pins, to allow to drive pixel 202.Panel 302 can comprise the multiple different structure of arranging in a multitude of different ways, and one of them execution mode comprises the printed circuit board (PCB) (PCB) with conductive trace at least in part, and encapsulation be surface mounted into traces into electrical contact.
Figure 27 shows another execution mode of display 350, and it has the LED of 70 4 × 4, and these encapsulation are arranged on display panel 352 with 6 × 12 layouts.Panel 352 can comprise the interconnection with the pin efferent structure of 20 of encapsulation 200 pins, to allow to drive pixel 202.Should be understood that typical display will have more encapsulation, to form display, some of them display has enough encapsulation to provide hundreds thousand of pixels.
Refer again to Figure 17, encapsulation 200 can be arranged so that the color of the upper surface of housing 204 is compared with the color of the light sent by groove/cavity 211 from encapsulation 200.In most cases, the light sent from cavity 211 can comprise the combination of the light sent by LED208a-c.In some embodiments, LED can send white light, and the upper surface of housing can comprise the color compared with white light.Can use multiple different color, such as, blue, brown, grey, redness, green, purple etc., illustrated embodiment has black thereon on the surface.Available multiple different known method applies black colorant.It can apply in the molding process of housing 204, or can apply at a rear step diverse ways in the process of manufacturing and encapsulation, such as, and silk screen printing, ink jet printing, japanning etc.Authorizing the U.S. Patent application the 12/875th of by name " LED Packagae With Contrasting Face(has the LED to specific surface) " of the people such as Chan, describe the LED had specific surface in No. 873, the full content of this U.S. Patent application is incorporated herein by reference.
Although describe the present invention in detail with reference to some preferred structure of the present invention, also can carry out other modification.This encapsulation can have multiple different shape and size, can arrange in a number of different manners, and can be made up of multiple different material.Can laying out pixel cavity in a number of different manners, and multiple different pattern can be arranged to.Multiple different feature can be used and by multiple interconnection structure, pixel is interconnected.Therefore, the spirit and scope of the present invention should not be limited to above-mentioned modification.
Claims (41)
1. a soild state transmitter encapsulation, comprising:
Multiple pixel, each pixel all has at least one soild state transmitter;
Share base station, transmit the luminescence for controlling the first pixel in described pixel and control the signal of telecommunication of luminescence of the second pixel in described pixel.
2. encapsulation according to claim 1, wherein, described base station is arranged as the luminescence for controlling described first pixel and described second pixel independently.
3. encapsulation according to claim 1, wherein, described first pixel or described second pixel transmitting white.
4. encapsulation according to claim 1, wherein, described soild state transmitter comprises LED.
5. encapsulation according to claim 4, wherein, at least one in described pixel comprises the LED of the blue light-emitting with phosphor.
6. encapsulation according to claim 4, wherein, at least one in described pixel comprises the LED emitted white light and the LED glowed.
7. encapsulation according to claim 2, wherein, described pixel can control, to send the white light of different temperatures.
8. encapsulation according to claim 2, wherein, described pixel can control, to send different colors.
9. encapsulation according to claim 2, wherein, described pixel can control, to send the light of different wave length.
10. encapsulation according to claim 2, wherein, each in described first pixel and described second pixel includes redness, green and blue led.
11. encapsulation according to claim 1, wherein, described base station comprises housing, and pin and lead frame structure and described housing form entirety.
12. encapsulation according to claim 11, comprise the multiple cavitys being arranged in described housing further, each cavity limits a pixel.
13. encapsulation according to claim 12, wherein, each cavity has at least one solid-state light emitters.
14. encapsulation according to claim 11, comprise the contrast district on the end face being positioned at described housing further.
15. encapsulation according to claim 1, wherein, described base station comprises pottery, printed circuit board (PCB), metal-core printed circuit board or FR-4 plate at least in part.
16. encapsulation according to claim 1, wherein, described base station comprises pin and lead frame structure.
17. encapsulation according to claim 1, wherein, described pixel is in matrix layout.
18. encapsulation according to claim 1, wherein, described pixel is in square matrices layout.
19. encapsulation according to claim 1, wherein, described pixel is in linear array layout.
20. encapsulation according to claim 1, wherein, described pin arrangement is allow the surface of described encapsulation to install.
21. encapsulation according to claim 1, wherein, at least two pixels share a transmitter power signal, and at least two pixels share a reflector control signal.
22. encapsulation according to claim 1, wherein, described pixel is arranged with matrix layout, and wherein one-row pixels shares a transmitter power signal, and the described pixel of row shares a reflector control signal.
Pixel more than 23. 1 kinds launches encapsulation, comprising:
Housing, has multiple cavity, and each cavity has at least one LED; And
Lead frame structure, forms entirety with described housing, and at least one LED described of each described cavity is mounted to described lead frame structure, and described encapsulation can receive the signal of telecommunication of the luminescence for controlling to come from the first cavity in described cavity and the second cavity.
24. encapsulation according to claim 23, described encapsulation is arranged to the signal of telecommunication that reception controls to come from the luminescence of described first cavity in described cavity and described second cavity independently.
25. encapsulation according to claim 23, wherein, each described cavity and corresponding at least one LED described thereof comprise pixel.
26. encapsulation according to claim 23, wherein, the luminescence of described first cavity and described second cavity can control, to send different colors.
27. encapsulation according to claim 23, wherein, each in described cavity includes redness, green and blue led.
28. encapsulation according to claim 23, comprise the contrast district on the end face being positioned at described housing further.
29. encapsulation according to claim 23, wherein, described pixel is in matrix layout or linear placement.
30. encapsulation according to claim 23, wherein, described pixel is in square matrices layout.
31. encapsulation according to claim 23, wherein, described pixel is in linear array layout.
32. encapsulation according to claim 23, comprise the pin efferent being arranged to and allowing the surface of described encapsulation to install further.
33. encapsulation according to claim 23, wherein, at least two LED in two cavitys share a LED power signal, and at least two LED in two cavitys share a reflector control signal.
34. encapsulation according to claim 23, wherein, described cavity is arranged with matrix layout, and wherein, the LED in one-row pixels shares a transmitter power signal, and the LED in the described cavity of row shares a LED control signal.
35. 1 kinds of light-emitting diode displays, comprising:
Multiple LED, install related to each other to produce message or image, at least some LED in described LED comprises multiple pixel, each pixel all has at least one LED, and each wherein, in described encapsulation all can receive the signal of telecommunication of the luminescence for controlling at least the first pixel in described pixel and the second pixel.
36. light-emitting diode displays according to claim 35, wherein, the described at least some encapsulation of described encapsulation is arranged to the signal of telecommunication of the luminescence received for controlling at least the first pixel in described pixel and the second pixel independently.
37. light-emitting diode displays according to claim 35, wherein, at least some encapsulation in described encapsulation comprises surface mounted device.
38. light-emitting diode displays according to claim 35, wherein, described first pixel and described second pixel comprise lead frame structure and the pin of the signal of telecommunication of the luminescence for pixel described in transfer control.
39. light-emitting diode displays according to claim 35, wherein, described first pixel and described second pixel can control, to send different colors.
40. light-emitting diode displays according to claim 35, wherein, at least one LED described comprises redness, green and blue led.
41. light-emitting diode displays according to claim 35, wherein, described pixel is in matrix layout or linear placement.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106023828A (en) * | 2016-07-15 | 2016-10-12 | 深圳市九晟光电通讯科技有限公司 | Outdoor display screen unit board and manufacturing method thereof |
| WO2019037094A1 (en) * | 2017-08-25 | 2019-02-28 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| JP2020504437A (en) * | 2017-03-28 | 2020-02-06 | 山東晶泰星光電科技有限公司Ｓｈａｎｄｏｎｇ Ｐｒｏｓｐｅｒｏｕｓ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Integrated RGB-LED display |
| EP3564996A4 (en) * | 2017-01-02 | 2020-07-29 | Lumens Co., Ltd. | Led display device |
| WO2021082793A1 (en) * | 2019-10-31 | 2021-05-06 | 京东方科技集团股份有限公司 | Display panel and driving method therefor, and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887889A (en) * | 2010-05-20 | 2010-11-17 | 广东威创视讯科技股份有限公司 | LED integrated circuit module and LED display module |
| CN102386307A (en) * | 2010-09-03 | 2012-03-21 | 惠州科锐光电有限公司 | LED package with contrasting face |
| CN102737555A (en) * | 2012-07-19 | 2012-10-17 | 广东威创视讯科技股份有限公司 | Light emitting diode (LED) display screen and manufacturing method thereof |
| CN202662602U (en) * | 2012-05-30 | 2013-01-09 | 东莞市凯昶德电子科技股份有限公司 | Multi-wafer LED structure |
| CN102945845A (en) * | 2012-11-13 | 2013-02-27 | 佛山市国星光电股份有限公司 | LED (Light Emitting Diode) device for display screen and display module |
| CN103178192A (en) * | 2013-03-11 | 2013-06-26 | 深圳市奥拓电子股份有限公司 | High-definition LED display screen and surface-mounted LED composite lamp with super-small point distance |
-
2013
- 2013-05-29 CN CN201310208431.2A patent/CN104218135A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887889A (en) * | 2010-05-20 | 2010-11-17 | 广东威创视讯科技股份有限公司 | LED integrated circuit module and LED display module |
| CN102386307A (en) * | 2010-09-03 | 2012-03-21 | 惠州科锐光电有限公司 | LED package with contrasting face |
| CN202662602U (en) * | 2012-05-30 | 2013-01-09 | 东莞市凯昶德电子科技股份有限公司 | Multi-wafer LED structure |
| CN102737555A (en) * | 2012-07-19 | 2012-10-17 | 广东威创视讯科技股份有限公司 | Light emitting diode (LED) display screen and manufacturing method thereof |
| CN102945845A (en) * | 2012-11-13 | 2013-02-27 | 佛山市国星光电股份有限公司 | LED (Light Emitting Diode) device for display screen and display module |
| CN103178192A (en) * | 2013-03-11 | 2013-06-26 | 深圳市奥拓电子股份有限公司 | High-definition LED display screen and surface-mounted LED composite lamp with super-small point distance |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106023828A (en) * | 2016-07-15 | 2016-10-12 | 深圳市九晟光电通讯科技有限公司 | Outdoor display screen unit board and manufacturing method thereof |
| EP3564996A4 (en) * | 2017-01-02 | 2020-07-29 | Lumens Co., Ltd. | Led display device |
| JP2020504437A (en) * | 2017-03-28 | 2020-02-06 | 山東晶泰星光電科技有限公司Ｓｈａｎｄｏｎｇ Ｐｒｏｓｐｅｒｏｕｓ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Integrated RGB-LED display |
| WO2019037094A1 (en) * | 2017-08-25 | 2019-02-28 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| CN110447110A (en) * | 2017-08-25 | 2019-11-12 | 惠州科锐半导体照明有限公司 | Multiple LED light source lens designs in integration packaging |
| US11094852B2 (en) | 2017-08-25 | 2021-08-17 | Cree Huizhou Solid State Lighting Company Limited | Multiple LED light source lens design in an integrated package |
| WO2021082793A1 (en) * | 2019-10-31 | 2021-05-06 | 京东方科技集团股份有限公司 | Display panel and driving method therefor, and display device |
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