CN104218130A - LED substrate structure and manufacturing method - Google Patents
LED substrate structure and manufacturing method Download PDFInfo
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- CN104218130A CN104218130A CN201410495764.2A CN201410495764A CN104218130A CN 104218130 A CN104218130 A CN 104218130A CN 201410495764 A CN201410495764 A CN 201410495764A CN 104218130 A CN104218130 A CN 104218130A
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- 239000000758 substrate Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 58
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 125000004122 cyclic group Chemical group 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000005034 decoration Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED (light-emitting diode) substrate structure and a manufacturing method thereof, wherein luminous efficiency, brightness and axial brightness of the LED are simultaneously improved by the way that a convex structure is surrounded with a first reflective body and a second reflective body is formed into a bowl-shaped pattern, and the crystalline quality of the LED isn't reduced; besides the manufacturing method of the LED substrate structure has has the characteristics of simple technology and low cost, thus the method is applied to the large-scale commercialized production, besides the luminous efficiency, brightness and axial brightness of the LED can be more effectively through the LED substrate structure, thereby quickening the industrialization process that the LED enters into the high-end illumination field and ordinary families and satisfying the sustainable development strategy of the LED.
Description
Technical field
The present invention relates to semiconductor optoelectronic field of chip manufacture technology, particularly a kind of LED substrat structure and preparation method thereof.
Background technology
Along with the raising of people's living standard, the enhancing of environmental consciousness, that pursues domestic environment, leisure and comfort level improves constantly, the situation that light fixture lamp decoration is also coexisted by simple illumination functions turning light and decoration gradually, the solid-state cold light source LED replacement conventional light source with illumination and decoration double dominant enters daily life becomes natural trend.
GaN base LED is since early 1990s commercialization, and through the development of twenties years, its structure was tending towards ripe and perfect, can meet the demand of people's present stage to decorative lamp; But will replace conventional light source completely and enter lighting field, the raising of luminosity is but the endless pursuit of LED industry researcher.
Under the prerequisite of the limited space that can improve at internal quantum efficiency (close to 100%), the researcher of LED industry has turned to external quantum efficiency sight, propose the multiple technologies scheme and method that can improve light extraction efficiency, such as patterned substrate technology, sidewall coarsening technique, DBR technology, optimize electrode structure, on substrate or nesa coating, make 2 D photon crystal etc.Wherein patterned substrate most effect, especially since 2010, in the excitation of the various policy of government with under promoting, no matter be that the dry method patterned substrate technology of cone structure or the wet method pattern substrate technology of Pyramid are obtained for development at full speed, its technique is very ripe, and instead of flat substrate completely in 2012, become the main flow substrate of LED chip, make the crystal structure of LED and luminosity be obtained for revolutionary raising.
Certainly, after thinning, the luminosity of LED also can be improved to a certain extent in the technology of the back side evaporation DBR of LED substrate.But after thinning, LED wafer is very thin (only having about 80um), be very easy to sliver, and once occur extremely being all not easy to do process of doing over again, can only scrap, so the cost of DBR technique is far above material and processing cost, it is then more invisible cost.So present stage LED replaces conventional illumination sources, enter lighting field, enter common people house, the problem run into is not the problem that brightness does not reach, but the problem that the U.S. valency of thing is not honest and clean, and this problem is all generally that structure is reasonable not, technology is optimized not, the inadequate Institute of Science of manufacturing cost is caused to cause.
Summary of the invention
The object of the present invention is to provide a kind of LED substrat structure and preparation method thereof, inadequate to solve existing LED or luminosity, or easy sliver in manufacturing process, the problem that cost is higher.
For solving the problems of the technologies described above, the invention provides a kind of LED substrat structure, described LED substrat structure comprises: substrate, described substrate is formed with convex structure and the refractive body of cyclic array arrangement, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
Optionally, in described LED substrat structure, described convex structure is convenient to connect GaN layer.
Optionally, in described LED substrat structure, the material of described refractive body is one or both combinations in silicon nitride and silicon dioxide.
Optionally, in described LED substrat structure, the material of described substrate and convex structure is sapphire.
The present invention also provides a kind of manufacture method of LED substrat structure, and the manufacture method of described LED substrat structure comprises:
Substrate is provided;
Etch described substrate, to form the convex structure of cyclic array arrangement over the substrate;
Form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
Optionally, in the manufacture method of described LED substrat structure, etch described substrate, comprise with the convex structure forming cyclic array arrangement over the substrate:
Form mask layer over the substrate;
Utilize photoetching and etching technics, remove part mask layer, expose section substrate;
Etch the section substrate exposed, to form the convex structure of cyclic array arrangement over the substrate;
Remove remaining mask layer.
Optionally, in the manufacture method of described LED substrat structure, formed in mask layer over the substrate, the material of described mask layer is at least one in silicon dioxide, silicon nitride and silicon oxynitride, and the thickness of described mask layer is 0.1 μm ~ 1 μm.
Optionally, in the manufacture method of described LED substrat structure, dry method or wet-etching technology is utilized to etch the section substrate exposed.
Optionally, in the manufacture method of described LED substrat structure, when utilizing wet-etching technology to etch the section substrate exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.
Optionally, in the manufacture method of described LED substrat structure, when utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.
Optionally, in the manufacture method of described LED substrat structure, form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, and described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed and comprise:
Described substrate and convex structure form reflector layer;
Described reflector layer forms photoresist;
Be that the ratio of 3:1 ~ 10:1 etches described photoresist and reflector layer with etching selection ratio, until photoresist removes completely and the roof of convex structure exposes, to form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
Optionally, in the manufacture method of described LED substrat structure, described convex structure is convenient to connect GaN layer.
Optionally, in the manufacture method of described LED substrat structure, the material of described refractive body is one or both combinations in silicon nitride and silicon dioxide.
Optionally, in the manufacture method of described LED substrat structure, the material of described substrate and convex structure is sapphire.
In LED substrat structure provided by the invention and preparation method thereof, bowl-shape figure is formed by the first refractive body ring bag convex structure, the second refractive body, while improving LED luminous efficiency and luminosity, the axial luminosity of LED can be improved, and do not reduce the crystal mass of LED; In addition, the manufacture method technique of LED substrat structure provided by the present invention is simple, with low cost, is suitable for large-scale commercial and produces; LED substrat structure provided by the present invention more effectively can improve the luminous efficiency of LED, luminosity and axial luminosity, can accelerate the industrialization process that LED enters high-end lighting field and common people family, meet the strategy of sustainable development of LED.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the manufacture method of the LED substrat structure of the embodiment of the present invention;
Fig. 2 ~ Figure 10 is the schematic diagram of the device architecture formed in the manufacture method of the LED substrat structure of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, LED substrat structure that the present invention proposes and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, it is the schematic flow sheet of the manufacture method of the LED substrat structure of the embodiment of the present invention.As shown in Figure 1, the manufacture method of described LED substrat structure comprises:
Step S10: substrate is provided;
Step S11: etch described substrate, to form the convex structure of cyclic array arrangement over the substrate;
Step S12: form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
Concrete, please refer to Fig. 2 ~ Figure 10, the schematic diagram of the device architecture formed in the manufacture method of the LED substrat structure that it is the embodiment of the present invention.
As shown in Figure 2, provide substrate 20, preferably, described substrate 20 is Sapphire Substrate.
Then, as shown in Fig. 3 ~ Fig. 5, described substrate 20 is etched, to form the convex structure 22 of cyclic array arrangement on described substrate 20.
First, as shown in Figure 3, described substrate 20 forms mask layer 21.Preferably, the thickness of described mask layer 21 is 0.1 μm ~ 1 μm.Further, the material of described mask layer 21 can be at least one in silicon dioxide, silicon nitride or silicon oxynitride etc.
Then, as shown in fig. 4 a, utilize photoetching and etching technics, remove part mask layer 21, expose section substrate 20.At this, can corresponding reference diagram 4b, Fig. 4 b vertical view that is the device architecture shown in Fig. 4 a, for the ease of distinguishing, in fig. 4b, mask layer 21 is indicated by the pattern of band lines.As shown in Figure 4 b, at this, the shape of substrate 20 is circular, remaining mask layer 21 is multiple discrete circular configurations, and it is cyclic array arrangement, wherein, at the marginal position of substrate 20, remaining mask layer 21 is limited to the size and shape of substrate 20, is not complete circular configuration.In other embodiments of the application, remaining mask layer 21 also can be multiple discrete ellipsoidal structure or polygonized structure etc., and the application is not construed as limiting this.
Then, as shown in Figure 5, the section substrate 20 exposed is etched, to form the convex structure 22 of cyclic array arrangement on described substrate 20.At this, the section shape of described convex structure 22 is trapezoidal.Meanwhile, the material of described convex structure 22 is also sapphire.
In the embodiment of the present application, dry etch process can be utilized to etch the section substrate 20 exposed, wet-etching technology also can be utilized to etch the section substrate 20 exposed.Concrete, when utilizing wet-etching technology to etch the section substrate 20 exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, and in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.Concrete, can do adaptability according to the height of the convex structure 22 that will be formed and select, the embodiment of the present application repeats no more this.When utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.Concrete etching gas can select the etching gas of this area routine, such as chlorine, boron chloride or argon gas etc.
Please continue to refer to Fig. 5, meanwhile, remove remaining mask layer 21, the mask layer 21 by convex structure 22 roof is removed.
After defining convex structure 22, then refractive body will be formed on described substrate 20, described refractive body comprises the first refractive body and the second refractive body, convex structure 22 described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, and described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure 22, described first refractive body and the second refractive body are integrally formed, concrete, please refer to Fig. 6 ~ Figure 10.
First, as shown in Figure 6, described substrate 20 and convex structure 22 form reflector layer 23.Namely a reflector layer 23 is formed, substrate 20 surface that described reflector layer 25 covers described convex structure 22 and exposes.Preferably, the material of described reflector layer 23 is one or both combinations in silicon nitride and silicon dioxide.
Then, as shown in Figure 7, described reflector layer 23 forms photoresist 24.
Then, as shown in Fig. 8 ~ Figure 10, be that the ratio of 3:1 ~ 10:1 etches described photoresist 24 and reflector layer 23 with etching selection ratio, until photoresist 24 removes completely and the roof of convex structure 22 exposes, thus refractive body 25 is formed on described substrate 20, described refractive body 25 comprises the first refractive body 251 and the second refractive body 252, convex structure 22 described in described first refractive body 251 ring bag, described second refractive body 252 is positioned at above described first refractive body 251, described second refractive body 252 forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure 22, described first refractive body 251 and the second refractive body 252 are integrally formed.At this, the material of described refractive body 25 is similarly one or both combinations in silicon nitride and silicon dioxide.
Please continue to refer to Fig. 8 ~ Figure 10, choose (wherein due to the characteristic of etching technics and etching selection ratio, the concrete selection of etching selection ratio can be regulated according to concrete technology situation), in the process etching photoresist 24 and reflector layer 23, to first remove the part photoresist 24 on convex structure 22, along with the continuation of etching technics, the reflector layer 23 on convex structure 22 and the part photoresist 24 on substrate 20 also will slowly be removed, the final structure formed as shown in Figure 10.
In the embodiment of the present application, the material of described substrate 20 and convex structure 22 is sapphire, by the roof of convex structure 22 is exposed, thus, in follow-up LED manufacturing process, described convex structure 22 can be utilized to connect GaN layer, thus realize LED substrat structure and be connected better with between GaN layer, and then improve the quality of GaN base LED.
Please continue to refer to Figure 10, through the manufacture method of above-mentioned LED substrat structure by formation one LED substrat structure, described LED substrat structure comprises: substrate 20, described substrate 20 is formed with convex structure 22 and the refractive body 25 of cyclic array arrangement, described refractive body 25 comprises the first refractive body 251 and the second refractive body 252, convex structure 22 described in described first refractive body 251 ring bag, described second refractive body 252 is positioned at above described first refractive body 251, described second refractive body 252 forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure 22, described first refractive body 251 and the second refractive body 252 are integrally formed.
In LED substrat structure that the embodiment of the present invention provides and preparation method thereof, bowl-shape figure is formed by the first refractive body ring bag convex structure, the second refractive body, while improving LED luminous efficiency and luminosity, the axial luminosity of LED can be improved, and do not reduce the crystal mass of LED; In addition, the manufacture method technique of LED substrat structure provided by the present invention is simple, with low cost, is suitable for large-scale commercial and produces; LED substrat structure provided by the present invention more effectively can improve the luminous efficiency of LED, luminosity and axial luminosity, can accelerate the industrialization process that LED enters high-end lighting field and common people family, meet the strategy of sustainable development of LED.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (14)
1. a LED substrat structure, it is characterized in that, comprise: substrate, described substrate is formed with convex structure and the refractive body of cyclic array arrangement, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, and described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
2. LED substrat structure as claimed in claim 1, is characterized in that, described convex structure is convenient to connect GaN layer.
3. LED substrat structure as claimed in claim 1, is characterized in that, the material of described refractive body is one or both combinations in silicon nitride and silicon dioxide.
4. the LED substrat structure according to any one of claims 1 to 3, is characterized in that, the material of described substrate and convex structure is sapphire.
5. a manufacture method for LED substrat structure, is characterized in that, comprising:
Substrate is provided;
Etch described substrate, to form the convex structure of cyclic array arrangement over the substrate;
Form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
6. the manufacture method of LED substrat structure as claimed in claim 5, is characterized in that, etch described substrate, comprises with the convex structure forming cyclic array arrangement over the substrate:
Form mask layer over the substrate;
Utilize photoetching and etching technics, remove part mask layer, expose section substrate;
Etch the section substrate exposed, to form the convex structure of cyclic array arrangement over the substrate;
Remove remaining mask layer.
7. the manufacture method of LED substrat structure as claimed in claim 6, it is characterized in that, formed in mask layer over the substrate, the material of described mask layer is at least one in silicon dioxide, silicon nitride and silicon oxynitride, and the thickness of described mask layer is 0.1 μm ~ 1 μm.
8. the manufacture method of LED substrat structure as claimed in claim 6, is characterized in that, utilize dry method or wet-etching technology to etch the section substrate exposed.
9. the manufacture method of LED substrat structure as claimed in claim 8, it is characterized in that, when utilizing wet-etching technology to etch the section substrate exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.
10. the manufacture method of LED substrat structure as claimed in claim 8, it is characterized in that, when utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.
The manufacture method of 11. LED substrat structures as claimed in claim 5, it is characterized in that, form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, and described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed and comprise:
Described substrate and convex structure form reflector layer;
Described reflector layer forms photoresist;
Be that the ratio of 3:1 ~ 10:1 etches described photoresist and reflector layer with etching selection ratio, until photoresist removes completely and the roof of convex structure exposes, to form refractive body over the substrate, described refractive body comprises the first refractive body and the second refractive body, convex structure described in described first refractive body ring bag, described second refractive body is positioned at above described first refractive body, described second refractive body forms bowl-shape figure, described bowl-shape figure is positioned at the top of described convex structure, and described first refractive body and the second refractive body are integrally formed.
The manufacture method of 12. LED substrat structures according to any one of claim 5 ~ 11, is characterized in that, described convex structure is convenient to connect GaN layer.
The manufacture method of 13. LED substrat structures according to any one of claim 5 ~ 11, is characterized in that, the material of described refractive body is one or both combinations in silicon nitride and silicon dioxide.
The manufacture method of 14. LED substrat structures according to any one of claim 5 ~ 11, it is characterized in that, the material of described substrate and convex structure is sapphire.
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| CN103915533A (en) * | 2014-04-10 | 2014-07-09 | 杭州士兰明芯科技有限公司 | Graphical substrate and inverted LED chip and manufacturing method thereof |
| CN204333023U (en) * | 2014-09-24 | 2015-05-13 | 杭州士兰明芯科技有限公司 | LED substrat structure |
-
2014
- 2014-09-24 CN CN201410495764.2A patent/CN104218130B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4356723B2 (en) * | 2001-07-24 | 2009-11-04 | 日亜化学工業株式会社 | Manufacturing method of nitride semiconductor light emitting device |
| CN101853911A (en) * | 2010-03-31 | 2010-10-06 | 晶能光电（江西）有限公司 | Light-emitting diode (LED) structure for improving light-extraction efficiency and manufacturing method |
| CN203013781U (en) * | 2012-12-17 | 2013-06-19 | 江苏新广联科技股份有限公司 | Patterned substrate |
| CN103915533A (en) * | 2014-04-10 | 2014-07-09 | 杭州士兰明芯科技有限公司 | Graphical substrate and inverted LED chip and manufacturing method thereof |
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