CN104216459B - Band gap generating circuit from reference voltage and the electronic system using it - Google Patents
Band gap generating circuit from reference voltage and the electronic system using it Download PDFInfo
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- CN104216459B CN104216459B CN201310218883.9A CN201310218883A CN104216459B CN 104216459 B CN104216459 B CN 104216459B CN 201310218883 A CN201310218883 A CN 201310218883A CN 104216459 B CN104216459 B CN 104216459B
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Abstract
The invention discloses a kind of in order to provide the band gap generating circuit from reference voltage of reference voltage, band gap generating circuit from reference voltage comprises four end current source circuits, mu balanced circuit and temperature-compensation circuit.Four end current source circuits are electrically connected the first system voltages, and when the first system voltage is greater than threshold voltage value, then the first voltage, the second voltage and the first electric current that export of four end current source circuits is independent of the change of the first system voltage.Mu balanced circuit receives the first voltage and the second voltage and when being greater than threshold voltage value when the first system voltage, by voltage difference stable between first and second voltage, then mu balanced circuit exports the reference voltage independent of the change of the first system voltage.Temperature-compensation circuit receives the first electric current and temperature curve in order to the reference voltage exported mu balanced circuit is compensated.
Description
Technical field
The present invention is about a kind of band gap generating circuit from reference voltage, refers to a kind of band gap generating circuit from reference voltage independent of system voltage and temperature especially.
Background technology
Under high-tech constantly innovates improvement, consumption electronic products are popularized gradually in the life of people, especially various portable electric device, such as: mobile phone, digital still camera, personal digital assistant or panel computer etc., because it is compact, portable characteristic is very popular.But the problem of portable electric device palpus considering power energy supply time length on using, many utilizations are as the cell apparatus such as Ni-MH battery and lithium battery at present, add that the extra charger meeting cell apparatus specification of arranging in pairs or groups uses.
Under prior art, the design of band gap reference voltage source circuit is well-known in this field, and these circuit are designed to provide one independent of the voltage standard of temperature variation in circuit.The reference voltage of band gap reference voltage source is the function of the difference (△ Vbe) of the base-emitter voltage Vbe of voltage Vbe and two other bipolar transistor developed between the base stage of an ambipolar bipolar junction transistor (bipolar transistor) and emitter-base bandgap grading.The base-emitter voltage Vbe of first bipolar transistor has a negative temperature coefficient, or base-emitter voltage Vbe will reduce when the temperature increases.The differential voltage △ Vbe of two other bipolar transistor will have a positive temperature coefficient, and this just means that this difference base-emitter voltage △ Vbe also increases when the temperature increases.Independent of the reference voltage of the temperature in band gap voltage reference voltage source by convergent-divergent difference base-emitter voltage △ Vbe and ask the base-emitter voltage Vbe's of itself and first bipolar transistor and and be adjusted.But general generating circuit from reference voltage usually all may suffer from the change of environment temperature or system voltage variation and have influence on the relevant issues of the degree of stability of reference voltage.
Summary of the invention
The object of the present invention is to provide a kind of in order to provide the band gap generating circuit from reference voltage of reference voltage, band gap generating circuit from reference voltage comprises four end current source circuits, mu balanced circuit and temperature-compensation circuit.Four end current source circuits are electrically connected the first system voltages, and when the first system voltage is greater than threshold voltage value, then the first voltage, the second voltage and the first electric current that export of four end current source circuits is independent of the change of the first system voltage.Mu balanced circuit is electrically connected four end current source circuits, described mu balanced circuit receives the first voltage and the second voltage and when being greater than threshold voltage value when the first system voltage, by voltage difference stable between first and second voltage, then mu balanced circuit exports the reference voltage independent of the change of the first system voltage.Temperature-compensation circuit is electrically connected four end current source circuit and mu balanced circuits, and described temperature-compensation circuit receives the first electric current and temperature curve in order to the reference voltage exported mu balanced circuit is compensated.
In one of them embodiment of the present invention, wherein the temperature curve of the reference voltage that mu balanced circuit exports is compensated, being three rank temperature curves with reference to the second-order temperature curve compensation of voltage.
In one of them embodiment of the present invention, when the first system voltage is greater than threshold voltage value, the first voltage of four end current source circuit stable outputs and the second voltage, and the first electric current of stable output.
In one of them embodiment of the present invention, four end current source circuits comprise the first transistor, transistor seconds and the first resistance.The drain electrode of the first transistor connects the first system voltage.The drain electrode of transistor seconds connects the source electrode of the first transistor, and the source electrode of transistor seconds connects the grid of the first transistor, and wherein first and second transistor is depletion transistor.One end of first resistance connects the source electrode of transistor seconds, the other end of the first resistance connects the grid of transistor seconds, wherein when the first system voltage is greater than threshold voltage value, then the first electric current that the first transistor, transistor seconds and the first resistance produce is the steady current of the change independent of the first system voltage.
In one of them embodiment of the present invention, mu balanced circuit comprises third transistor and the 4th transistor.The drain electrode of third transistor connects the first system voltage, and the grid of third transistor connects the grid of the first transistor to receive the first voltage.The drain electrode of the 4th transistor connects the source electrode of third transistor, the grid of the 4th transistor connects the other end of the first resistance to receive the second voltage, the source electrode of the 4th transistor connects pull-up resistor and output reference voltage, and wherein the 3rd and the 4th transistor is depletion transistor.Make the source voltage of third transistor be locked in stable magnitude of voltage by the first stable voltage, and then make reference voltage be locked in the first reference voltage level independent of the change of the first system voltage.
In one of them embodiment of the present invention, mu balanced circuit comprises the 5th transistor AND gate the 6th transistor.The drain electrode of the 5th transistor connects the first system voltage, and the grid of the 5th transistor connects the source electrode of the first transistor to receive the first voltage.The drain electrode of the 6th transistor connects the source electrode of the 5th transistor, the grid of the 6th transistor connects the grid of the first transistor to receive the second voltage, the source electrode of the 6th transistor connects pull-up resistor and output reference voltage, wherein the 5th and the 6th transistor is depletion transistor, wherein make the source voltage of the 5th transistor be locked in stable magnitude of voltage by the first stable voltage, and then make reference voltage be locked in the first reference voltage level independent of the change of the first system voltage.
In one of them embodiment of the present invention, temperature-compensation circuit comprises the first bipolar transistor, the second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the second bipolar transistor, the 6th resistance and the 3rd bipolar transistor.The emitter-base bandgap grading of the first bipolar transistor connects ground voltage.One end of second resistance connects the base stage of the first bipolar transistor.One end of 3rd resistance connects the other end of the second resistance, and the other end of the 3rd resistance connects the collector of the first bipolar transistor.One end of 4th resistance connects one end of the 3rd resistance.One end of 5th resistance connects the other end of the 4th resistance and is connected to the source electrode of the 4th transistor or the 6th transistor.The base stage of the second bipolar transistor connects the other end of the 3rd resistance, and the collector of the second bipolar transistor connects the other end of the 5th resistance.One end of 6th resistance connects the emitter-base bandgap grading of the second bipolar transistor, the other end of the 6th resistance connects ground voltage, wherein makes the second electric current flowing through the 6th resistance be the electric current of positive temperature coefficient (PTC) by the base emitter-base bandgap grading pressure reduction between the first base emitter voltage of the first bipolar transistor and the second base emitter voltage of the second bipolar transistor.The base stage of the 3rd bipolar transistor connects the collector of the second bipolar transistor, the emitter-base bandgap grading of the 3rd bipolar transistor connects ground voltage, the collector of the 3rd bipolar transistor connects the other end of the first resistance, and described 3rd bipolar transistor has the 3rd base emitter voltage of negative temperature coefficient.By adjusting the resistance value of the 5th resistance and the 6th resistance, make this reference voltage be to equal or close to the voltage of zero-temperature coefficient, and the first reference voltage level equal the pressure drop of the 5th resistance and the summation of the 3rd base emitter voltage.
In one of them embodiment of the present invention, be three rank temperature curves by the resistance value that adjusts second and third resistance with reference to the second-order temperature curve compensation of voltage.
In one of them embodiment of the present invention, temperature-compensation circuit also comprises the 7th resistance.One end of 7th resistance connects the base stage of the 3rd bipolar transistor, the other end of the 7th resistance connects ground voltage, described 7th resistance is promoted to the second reference voltage level in order to the first reference voltage level with reference to voltage, and wherein the second reference voltage level of reference voltage equals the summation of the pressure drop of the 5th resistance and the pressure drop of the 7th resistance
From another viewpoint, the embodiment of the present invention provides a kind of electronic system, and electronic system comprises band gap generating circuit from reference voltage and load.Band gap generating circuit from reference voltage comprises four end current source circuits, mu balanced circuit and temperature-compensation circuit.Four end current source circuits are electrically connected the first system voltages, and when the first system voltage is greater than threshold voltage value, then the first voltage, the second voltage and the first electric current that export of four end current source circuits is independent of the change of the first system voltage.Mu balanced circuit is electrically connected four end current source circuits, described mu balanced circuit receives the first voltage and the second voltage and when being greater than threshold voltage value when the first system voltage, by voltage difference stable between first and second voltage, then mu balanced circuit exports the reference voltage independent of the change of the first system voltage.Temperature-compensation circuit is electrically connected four end current source circuit and mu balanced circuits, and described temperature-compensation circuit receives the first electric current and temperature curve in order to the reference voltage exported mu balanced circuit is compensated.Load is electrically connected to band gap generating circuit from reference voltage to receive reference voltage.
In sum, the band gap generating circuit from reference voltage that the embodiment of the present invention proposes and electronic system, make band gap generating circuit from reference voltage provide an energy independent of the reference voltage of the first system voltage and temperature by four end current source circuits and temperature-compensation circuit.
Further understand feature of the present invention and technology contents for enable, refer to following detailed description for the present invention and accompanying drawing, but these illustrate and institute's accompanying drawings is only used for the present invention is described, but not any restriction is done to right of the present invention.
Accompanying drawing explanation
Fig. 1 is the block schematic diagram of the band gap generating circuit from reference voltage according to the embodiment of the present invention.
Fig. 2 is the physical circuit figure of the band gap generating circuit from reference voltage according to the embodiment of the present invention.
Fig. 3 is the curve map of the temperature compensation effect of band gap generating circuit from reference voltage according to the embodiment of the present invention.
Fig. 4 is to the curve map of output current according to the reference voltage of the embodiment of the present invention.
Fig. 5 is to the curve map of system voltage according to the reference voltage of the embodiment of the present invention.
Fig. 6 is to family of curves's simulation drawing of temperature according to the reference voltage of the embodiment of the present invention.
Fig. 7 is to family of curves's simulation drawing of temperature according to the side-play amount of the reference voltage of the embodiment of the present invention.
Fig. 8 is to family of curves's simulation drawing of output current according to the reference voltage of the embodiment of the present invention.
Fig. 9 is to family of curves's simulation drawing of system voltage according to the reference voltage of the embodiment of the present invention.
Figure 10 be according to another embodiment of the present invention reference voltage to the curve map of temperature.
Figure 11 be according to another embodiment of the present invention reference voltage to the curve map of output current.
Figure 12 be according to another embodiment of the present invention reference voltage to the curve map of system voltage.
Figure 13 is to family of curves's simulation drawing of temperature according to the reference voltage of the embodiment of the present invention.
Figure 14 is to family of curves's simulation drawing of temperature according to the side-play amount of the reference voltage of the embodiment of the present invention.
Figure 15 is to family of curves's simulation drawing of output current according to the reference voltage of the embodiment of the present invention.
Figure 16 is to family of curves's simulation drawing of system voltage according to the reference voltage of the embodiment of the present invention.
Figure 17 is the physical circuit figure of band gap generating circuit from reference voltage according to yet another embodiment of the invention.
Figure 18 is the simulation curve figure of reference voltage according to yet another embodiment of the invention to temperature.
Figure 19 is that the side-play amount of reference voltage is according to yet another embodiment of the invention to the simulation curve figure of temperature.
Figure 20 is the simulation curve figure of reference voltage according to yet another embodiment of the invention to output current.
Figure 21 is the simulation curve figure of reference voltage according to yet another embodiment of the invention to system voltage.
Figure 22 is another simulation curve figure of reference voltage according to yet another embodiment of the invention to system voltage.
Figure 23 is the schematic diagram of the electronic system according to the embodiment of the present invention.
Wherein, description of reference numerals is as follows:
100,200,1700: band gap generating circuit from reference voltage;
110: four end current source circuits;
120: mu balanced circuit;
130: temperature-compensation circuit;
2300: electronic system;
2310: band gap generating circuit from reference voltage;
2320: load;
C1, c2, c3, c4: curve;
GND: ground voltage;
M1: the first transistor;
M2: transistor seconds;
M3: third transistor;
M4: the four transistor;
M5: the five transistor;
M6: the six transistor;
Q1: the first bipolar transistor;
Q2: the second bipolar transistor;
Q3: the three bipolar transistor;
R1: the first resistance;
R2: the second resistance;
R3: the three resistance;
R4: the four resistance;
R5: the five resistance;
R6: the six resistance;
R7: the seven resistance;
RL: pull-up resistor;
I1: the first electric current;
I2: the second electric current;
I3: the three electric current;
IL: output current;
V1: the first voltage;
V2: the second voltage;
△ VBE: base emitter-base bandgap grading pressure reduction;
VBE1: the first base emitter voltage;
VBE2: the second base emitter voltage;
VBE3: the three base emitter voltage;
VDD: the first system voltage;
VREF: reference voltage.
Embodiment
Hereafter various exemplary embodiments will be described more fully referring to alterations, in alterations, show some exemplary embodiments.But concept of the present invention may embody in many different forms, and should not be construed as and be limited to set forth exemplary embodiments herein.Specifically, these exemplary embodiments are provided to make the present invention for detailed and complete, and will will fully pass on the category of concept of the present invention to those skilled in the art.All graphic in, can in order to clear and lavish praise on oneself size and the relative size in Ceng Ji district.Similar numeral indicates like all the time.
Although should be understood that and term first, second, third, etc. may be used herein to describe various element, these elements should not limit by these terms.These terms are distinguish an element and another element.Therefore, the first element hereafter discussed can be described as the second element and does not depart from the teaching of concept of the present invention.As used herein, term " and/or " comprise all combinations listing any one and one or many person in project be associated.
(embodiment of band gap generating circuit from reference voltage)
Please refer to Fig. 1, Fig. 1 is the block schematic diagram of the band gap generating circuit from reference voltage according to the embodiment of the present invention.In the present embodiment, band gap generating circuit from reference voltage 100 is in order to provide a reference voltage VREF to next stage circuit or load.Band gap generating circuit from reference voltage 100 comprises four end current source circuits 110, mu balanced circuit 120 and temperature-compensation circuit 130.Four end current source circuits 110 are electrically connected the first system voltage VDD.Mu balanced circuit 120 is electrically connected four end current source circuits 110 and the first system voltage VDD.Temperature-compensation circuit 130 is electrically connected four end current source circuits 110 and mu balanced circuit 120.It is noted that, the first system voltage VDD is in the present embodiment cell voltage, but not in this, as restriction.Moreover, under the prior art, for the third generation (3G)/forth generation (4G) cell phone system, the third generation (3G)/forth generation (4G) cell phone system has very strict requirement for the precision of radio frequency power output.Because the magnitude of voltage of battery of mobile phone has sizable change, it from 3.2 volts to 4.2 volts not etc., therefore may can affect the precision of the output power of radio-frequency power amplifier.
By the band gap generating circuit from reference voltage 100 of this disclosure, when the first system voltage VDD (that is cell voltage) is greater than threshold voltage value, then four end current source circuits 110 can stable outputs and the first electric current I 1 to temperature-compensation circuit 130 of change independent of the first system voltage VDD, and exports independent of the first voltage V1 of the change of the first system voltage VDD and the second voltage V2 to mu balanced circuit 120.Then, similarly when the first system voltage VDD is greater than threshold voltage value, mu balanced circuit 120 is received the first voltage V1 and the second voltage V2 and is exported the reference voltage VREF of the change independent of the first system voltage VDD by the steady voltage difference between the first voltage V1 and the second voltage V2.Furthermore, the first stable voltage V1 that four end current source circuits 110 export and the second voltage V2 is used to drive mu balanced circuit 120, and the first voltage V1 and the second voltage V2 can be locked by mu balanced circuit 120 further.From another viewpoint, when the first system voltage VDD is greater than threshold voltage value, due to the first stable electric current I 1 that the four end current source circuits 110 of this disclosure produce, and then make the voltage difference between the first voltage V1 and the second voltage V2 and stablize.It is worth mentioning that, described threshold voltage value is the magnitude of voltage between 2.5 volts to 3.2 volts, finger, and its actual numerical values recited is designed according to circuit design or practical application request by deviser.
For example, in an exemplary embodiments, threshold voltage value is 1.8 volts, then represent that four end current source circuits 110 can the first electric current I 1 of stable output between 1.8 volts and 4.2 volts in the first system voltage VDD, and this first stable electric current I 1 meeting and then the voltage difference between the first voltage V1 and the second voltage V2 is stablized, and then make the mu balanced circuit 120 that drives by the first voltage V1 and the second voltage V2 can at the reference voltage VREF of the first system voltage VDD stable output between 1.8 volts and 4.2 volts (such as 1.5 volts).
In temperature compensation effect, to be driven as current source by the first stable electric current I 1 or bias voltage temperature compensation circuit 130 is compensated with the temperature curve of the reference voltage VREF exported mu balanced circuit 120, even if also the temperature coefficient of reference voltage VREF is equal or close to zero-temperature coefficient.Furthermore, in the present embodiment, temperature-compensation circuit 130 can be three rank temperature curves from second-order temperature curve compensation with reference to the temperature curve of voltage VREF, has good temperature compensation effect to make the band gap generating circuit from reference voltage 100 of this disclosure.
In order to illustrate in greater detail the operation workflow of band gap generating circuit from reference voltage 100 of the present invention, one of be at least further described in multiple embodiment below.
In ensuing multiple embodiment, the part being different from above-mentioned Fig. 1 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 1 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(another embodiment of band gap generating circuit from reference voltage)
Please refer to Fig. 2, Fig. 2 is the physical circuit figure of the band gap generating circuit from reference voltage according to the embodiment of the present invention.With above-mentioned Fig. 1 embodiment unlike, four end current source circuits 110 comprise the first transistor M1, transistor seconds M2 and the first resistance R1.Mu balanced circuit 120 comprises third transistor M3 and the 4th transistor M4.Temperature-compensation circuit 130 comprises the first bipolar transistor Q1, the second bipolar transistor Q2, the 3rd bipolar transistor Q3, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5 and the 6th resistance R6, and wherein the emitter-base bandgap grading area of the second bipolar transistor Q2 is greater than the emitter-base bandgap grading area of the first bipolar transistor Q1.The drain electrode of the first transistor M1 connects the first system voltage VDD.The drain electrode of transistor seconds M2 connects the source electrode of the first transistor M1, and the source electrode of transistor seconds M2 connects the grid of the first transistor M1, and wherein the first transistor M1 and transistor seconds M2 is depletion transistor.One end of first resistance R1 connects the source electrode of transistor seconds M2, and the other end of the first resistance R1 connects the grid of transistor seconds M2.The drain electrode of third transistor M3 connects the first system voltage VDD, and the grid of third transistor M3 connects the grid of the first transistor M1 to receive the first voltage V1.The drain electrode of the 4th transistor M4 connects the source electrode of third transistor M3, the grid of the 4th transistor M4 connects the other end of the first resistance R1 to receive the second voltage V2, the source electrode of the 4th transistor M4 connects pull-up resistor RL and output reference voltage VREF, and wherein third transistor M3 and the 4th transistor M4 is depletion transistor.The emitter-base bandgap grading of the first bipolar transistor Q1 connects ground voltage GND.One end of second resistance R2 connects the base stage of the first bipolar transistor Q1.One end of 3rd resistance R3 connects the other end of the second resistance R2, and the other end of the 3rd resistance R3 connects the collector of the first bipolar transistor Q1.One end of 4th resistance R4 connects one end of the 3rd resistance R3.One end of 5th resistance R5 connects the other end of the 4th resistance R4 and is connected to the 4th transistor M4.The base stage of the second bipolar transistor Q2 connects the other end of the 3rd resistance R3, and the collector of the second bipolar transistor Q2 connects the other end of the 5th resistance R5.One end of 6th resistance R6 connects the emitter-base bandgap grading of the second bipolar transistor Q2, and the other end of the 6th resistance R6 connects ground voltage GND.
Before being described below, what must first illustrate is, positive temperature coefficient (PTC) described in this disclosure indicates between its physical quantity (as magnitude of voltage, current value or resistance value) and temperature proportional, that is, when temperature rises or decline, its physical quantity can rise along with temperature or decline; Negative temperature coefficient described in this disclosure to indicate between its physical quantity and temperature inversely, and that is, when temperature rises or decline, its physical quantity can decline along with temperature or rise.It is separate relation that zero-temperature coefficient described in this disclosure indicates between its physical quantity (as magnitude of voltage, current value or resistance value) and temperature, that is, when temperature rises or decline, its physical quantity can't rise along with temperature or decline.
Next to want teaching, be further illustrate band gap generating circuit from reference voltage 200 principle of work more to understand this disclosure.
At band gap generating circuit from reference voltage 200 under the change of the first system voltage VDD (that is cell voltage), this disclosure provides the first stable electric current I 1 by the first transistor M1, transistor seconds M2 and the first resistance R1.Furthermore, when the first system voltage VDD is greater than threshold voltage value (as 1.8 volts), the grid of the first transistor M1 and source electrode can be maintained stable magnitude of voltage respectively, and the grid of transistor seconds M2 and source electrode also can be maintained stable magnitude of voltage respectively, then produce the first electric current I 1 by the first resistance R1.Due to, one end of first resistance R1 is electrically connected to the source electrode of transistor seconds M2, the other end of the first resistance R1 is electrically connected to the grid of transistor seconds M2, and therefore the voltage difference at the first resistance R1 two ends can maintain a stable voltage, and then the first electric current I 1 is stablized.In the present embodiment, deviser can adjust the resistance of the first resistance R1 with the next realistic application demand of the size obtaining the first required electric current I 1.Then, in the present embodiment, the grid voltage of the first transistor M1 is used as the first voltage V1, and the grid voltage of transistor seconds M2 is used as the second voltage V2, and utilize the first voltage V1 and the second voltage V2 to drive or biased zener circuit 120.Furthermore, because the grid of third transistor M3 receives the first voltage V1 and third transistor M3 is depletion transistor, the source voltage of third transistor Q3 is made to be locked in stable magnitude of voltage by the first stable voltage V1, and then make reference voltage VREF be locked in the first reference voltage level independent of the change of the first system voltage VDD, wherein the first reference voltage level equals the pressure drop of the 5th resistance R5 and the summation of the 3rd base emitter voltage VBE3.For example, the source grid voltage of third transistor M3 is 1 volt in the present embodiment, so the source voltage of third transistor M3 can be greater than the first voltage V1 about 1 volt, and then make the source voltage of third transistor M3 can be locked in the magnitude of voltage of both summations of the first voltage V1 and 1 volt, wherein the drain voltage of the 4th transistor M4 equals the source voltage of third transistor M3.Then, because the grid voltage of the 4th transistor M4 and drain voltage are all locked in place, therefore the source voltage (that is reference voltage VREF) of the 4th transistor M4 also can be locked in a fixing magnitude of voltage.From another viewpoint, mu balanced circuit 120 utilizes the formula depletion transistor that splices to carry out construction to form, accordingly to provide one to stablize and the reference voltage VREF changed independent of cell voltage.In the present embodiment, first to fourth transistor M1 ~ M4 is that false type high-velocity electrons move transistor (PseudomorphicHighElectronMobilityTransistor, PHEMT).
In temperature compensation effect, in the present embodiment, temperature-compensation circuit 130 utilizes the first bipolar transistor Q1, the second bipolar transistor Q2, the 3rd bipolar transistor Q3, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5 and the 6th resistance R6 construction to form, wherein bipolar transistor Q1, Q2 and Q3 are heterogenous junction type bipolar transistor (HeterojunctionBipolarTransistor, HBT) and have base emitter voltage VBE1, VBE2 and the VBE3 of negative temperature coefficient respectively.As shown in Figure 2, the voltage difference at the 6th resistance R6 two ends is the base emitter-base bandgap grading pressure reduction △ VBE (such as formula (1) Suo Shi) between the first base emitter voltage VBE1 of the first bipolar transistor Q1 and the second base emitter voltage VBE2 of the second bipolar transistor VBE2, wherein should be noted that, have ignored the effect of the second resistance R2 and the 3rd resistance R3 to obtain this formula in this hypothesis, and base emitter-base bandgap grading pressure reduction △ VBE is the voltage of negative temperature coefficient.Then, make the second electric current I 2 flowing through the 6th resistance R6 for having the electric current of positive temperature coefficient (PTC) by the 6th resistance R6 and base emitter-base bandgap grading pressure reduction △ VBE.Then, if ignore the base current effect of transistor seconds Q2 and third transistor Q3, then the 3rd electric current I 3 flowing through the 5th resistance R5 equals the second electric current I 2, and the 3rd electric current I 3 similarly can have the characteristic of positive temperature coefficient (PTC).Can be learnt by kirchhoff voltage law (KVL); reference voltage VREF is both summations of the pressure drop of the 5th resistance R5 and the base emitter voltage VBE3 of third transistor Q3; shown in (2), in one embodiment, reference voltage level is 1.48 volts.Therefore, deviser can make reference voltage VREF can present when in the face of variation of ambient temperature to equal by the resistance adjustment of the 5th resistance R5 and the 6th resistance R6 or close to the characteristic of zero-temperature coefficient.It is worth mentioning that, this disclosure can be three rank temperature curves with reference to the second-order temperature curve compensation of voltage VREF by the resistance value that adjusts the second resistance R2 and the 3rd resistance R3.
△ VBE=VBE1 – VBE2 formula (1)
VREF=I3×R5+VBE3
=(R5/R6) × △ VBE+VBE3 formula (2)
Hold above-mentioned, the band gap generating circuit from reference voltage 200 of this disclosure when the change of cell voltage (magnitude of voltage as battery of mobile phone) with in the face of variation of ambient temperature (between bearing 55 degree to 125 degree Celsius as Celsius) time stable reference voltage VREF independent of cell voltage and environment temperature two parameters can both be provided.
Referring to Fig. 2 and Fig. 3, Fig. 3 is the curve map of the temperature compensation effect of band gap generating circuit from reference voltage according to the embodiment of the present invention.In figure 3, transverse axis is temperature (unit is Celsius), and the left longitudinal axis is reference voltage (unit is volt), and right transverse axis is the side-play amount (unit is number percent %) of reference voltage, curve c1 represents reference voltage, and curve c2 represents the side-play amount of reference voltage.As shown in Figure 3, curve c1 and c2 is three rank temperature curves (adjustment by the first resistance R1, the second resistance R2 and the 3rd resistance R3), and between negative 55 degree to 125 degree Celsius Celsius, the magnitude of voltage of reference voltage VREF can be stable maintain 1.481 volts, and the side-play amount of reference voltage VREF is also in the extreme little (being less than positive and negative 0.003%).Referring to Fig. 2 and Fig. 4, Fig. 4 is to the curve map of output current according to the reference voltage of the embodiment of the present invention.In the diagram, transverse axis is output current IL (unit is milliampere), and the longitudinal axis is reference voltage (unit is volt), and wherein output resistance is less than 0.2 ohm.As shown in Figure 4, under different pull-up resistor RL corresponds to different output current IL, reference voltage VREF still can maintain a stable magnitude of voltage (about 1.48 volts), and therefore load regulation (LoadRegulation) is about 0.02%.Referring to Fig. 2 and Fig. 5, Fig. 5 is to the curve map of system voltage according to the reference voltage of the embodiment of the present invention.In Figure 5, transverse axis is system voltage (unit is volt), and the longitudinal axis is reference voltage (unit is volt), and as shown in Figure 5, be between 3 volts to 4.2 volts at system voltage VDD, reference voltage VREF still can maintain fixing magnitude of voltage, as 1.48 volts.Therefore power rejection ratio (PowerSupplyRejectionRatio, PSRR) of the band gap generating circuit from reference voltage 200 of this disclosure is about 96dB, and line regulates (LineRegulation) to be about 0.002%.Accordingly, from Fig. 3 to Fig. 5, reference voltage VREF is when the change of the change of environment temperature, the change of pull-up resistor RL (change corresponding to output current IL) and the first system voltage VDD, a fixing magnitude of voltage can both be maintained at, as 1.48 volts by the working mechanism of this disclosure.Next, reoffer the simulation curve race of the present embodiment more to understand effect of the present embodiment, referring to Fig. 6 to Fig. 9, Fig. 6 is to family of curves's simulation drawing of temperature according to the reference voltage of the embodiment of the present invention, it is that the reference voltage VREF that obtains under the first system voltage is in 3 volts (volt, V) to 5 volts of scanning situations is to the mimic diagram of environment temperature.Fig. 7 is to family of curves's simulation drawing of temperature according to the side-play amount of the reference voltage of the embodiment of the present invention.From Fig. 6 and Fig. 7, in the present embodiment, the reference voltage VREF that band gap generating circuit from reference voltage 200 produces can both very stably be maintained at 1.48 volts compared to the change of environment temperature and the change of system voltage VDD (cell voltage), and its measures of dispersion also only only has positive and negative 0.0085%, there is quite excellent resistance effect.Fig. 8 is according to the reference voltage of the embodiment of the present invention to family of curves's simulation drawing of output current, and its reference voltage obtained in 3 volts to 5 volts scanning situations for the first system voltage VDD is to the mimic diagram of output current.Fig. 9 is according to the reference voltage of the embodiment of the present invention to family of curves's simulation drawing of system voltage, in fig .9, for simulated environment temperature being set in the simulation drawing that between negative 55 degree to 125 degree Celsius Celsius, scanning obtains.From the viewpoint of family of curves, the reference voltage VREF that band gap generating circuit from reference voltage 200 produces is when the change of the change of environment temperature, the change of pull-up resistor RL (change corresponding to output current IL) and the first system voltage VDD, a stable magnitude of voltage can both be maintained at, as 1.48 volts by the working mechanism of this disclosure.
In another embodiment, be set in by analog temperature to scan band gap generating circuit from reference voltage 200 between zero centigrade to 80 degree, the reference voltage VREF that band gap generating circuit from reference voltage 200 provides can stablize more compared to temperature variation.Please refer to Figure 10, Figure 10 be according to another embodiment of the present invention reference voltage to the curve map of temperature.In Fig. 10, transverse axis is temperature (unit is Celsius), and the left longitudinal axis is reference voltage (unit is volt) and the right longitudinal axis is the side-play amount (unit is %) of reference voltage.In Fig. 10, curve c3 represents reference voltage VREF and curve c4 represents the side-play amount of reference voltage VREF, in the present embodiment, between Celsius temperature zero degree to 80 degree, 2.8 microvolts (microvolt) are only differed between the maxima and minima of reference voltage VREF, and the side-play amount of reference voltage VREF is less than positive and negative 0.0001%, there is splendid temperature compensation effect.Next, please refer to Figure 11 and Figure 12, Figure 11 be according to another embodiment of the present invention reference voltage to the curve map of output current, Figure 12 be according to another embodiment of the present invention reference voltage to the curve map of system voltage.From Figure 11 and Figure 12, during the change of reference voltage VREF relative to output current IL and system voltage VDD, reference voltage VREF can maintain the stable magnitude of voltage of 1.456 volts, and wherein the power rejection ratio (PSRR) of band gap generating circuit from reference voltage 200 more can bring up to 100dB (can be learnt by Figure 12).From another viewpoint, please refer to Figure 13 ~ Figure 16, Figure 13 is to family of curves's simulation drawing of temperature according to the reference voltage of the embodiment of the present invention.Figure 14 is to family of curves's simulation drawing of temperature according to the side-play amount of the reference voltage of the embodiment of the present invention.Figure 15 is to family of curves's simulation drawing of output current according to the reference voltage of the embodiment of the present invention.Figure 16 is to family of curves's simulation drawing of system voltage according to the reference voltage of the embodiment of the present invention.From Figure 15 to Figure 16, reference voltage VREF, providing stable magnitude of voltage when the change of the change of environment temperature, the change of output current IL and system voltage VDD, as 1.456 volts, therefore has splendid stability.
In ensuing at least one embodiment, the part being different from above-mentioned Fig. 2 embodiment will be described, and all the other clippeds are identical with the part of above-mentioned Fig. 2 embodiment.In addition, for illustrating for the purpose of facility, similar reference number or label indicate similar element.
(embodiment again of band gap generating circuit from reference voltage)
Please refer to Figure 17, Figure 17 is the physical circuit figure of band gap generating circuit from reference voltage according to yet another embodiment of the invention.With above-mentioned Fig. 2 embodiment unlike, at the band gap generating circuit from reference voltage 1700 of the present embodiment, mu balanced circuit 120 comprises the 5th transistor M5 and the 6th transistor M6.The drain electrode of the 5th transistor M5 connects the first system voltage VDD, the grid of the 5th transistor M5 connects the source electrode of the first transistor M1 to receive the first voltage V1, the source voltage of the 5th transistor Q5 is made to be locked in stable magnitude of voltage by the first stable voltage V1, and then make reference voltage VREF be locked in the first reference voltage level independent of the change of the first system voltage VDD, wherein the first reference voltage level equals the pressure drop of the 5th resistance R5 and the summation of the 3rd base emitter voltage VBE3.The drain electrode of the 6th transistor M6 connects the source electrode of the 5th transistor M5, the grid of the 6th transistor M6 connects the grid of the first transistor M1 to receive the second voltage V2, the source electrode of the 6th transistor M6 connects one end of pull-up resistor RL and the 5th resistance R5 and output reference voltage VREF, and wherein the 5th transistor M5 and the 6th transistor M6 is depletion transistor.
In the present embodiment, when the first system voltage VDD is greater than threshold voltage value (as 3 volts), the grid of the first transistor M1 and source electrode can be maintained stable magnitude of voltage respectively, and the grid of transistor seconds M2 and source electrode also can be maintained stable magnitude of voltage respectively, then produce the first electric current I 1 by the first resistance R1.Moreover the source voltage that the grid of the 5th transistor M5 is connected to the first transistor M1 is using as the first voltage V1, and the grid of the 6th transistor M6 source voltage that is connected to transistor seconds M2 is using as the second voltage V2.Band gap generating circuit from reference voltage 1700 utilizes the first voltage V1 (source voltage of the first transistor M1) and the second voltage V2 (source voltage of the first transistor M2) to drive or biased zener circuit 120.Furthermore, because the source voltage that the grid of the 5th transistor M5 receives stable the first transistor M1 using as the first voltage V1 and the 5th transistor M5 this as depletion transistor, so the source voltage of the 5th transistor M5 can be greater than the first voltage about 1 volt, and then make the source voltage of the 5th transistor M5 be locked in the magnitude of voltage of both summations of the first voltage V1 and 1 volt, wherein the drain voltage of the 6th transistor M6 equals the source voltage of the 5th transistor M5.Then, because the grid voltage of the 6th transistor M6 and drain voltage are all locked in place, therefore the source voltage (that is reference voltage VREF) of the 6th transistor M6 also can be locked in a fixing magnitude of voltage.
In temperature compensation effect, with above-mentioned Fig. 2 embodiment unlike, the temperature-compensation circuit of Figure 17 embodiment also comprises one the 7th resistance R7.One end of 7th resistance R7 connects the base stage of the 3rd bipolar transistor Q3, and the other end of the 7th resistance R7 connects ground voltage GND.In the present embodiment, 7th resistance is promoted to the second reference voltage level (as 2.78 volts) in order to the first reference voltage level (as 1.48 volts) with reference to voltage VREF, and wherein second reference voltage level of reference voltage VREF equals the summation of the pressure drop of the 5th resistance R5 and the pressure drop of the 7th resistance R7.All the other are identical with above-mentioned Fig. 2 embodiment, do not repeat them here.
Referring to Figure 17, Figure 18 and Figure 19, Figure 18 is the simulation curve figure of reference voltage according to yet another embodiment of the invention to temperature.Figure 19 is that the side-play amount of reference voltage is according to yet another embodiment of the invention to the simulation curve figure of temperature.Temperature is under negative change between 55 degree and 125 degree Celsius Celsius, and the temperature curve of reference voltage VREF can present three excellent rank temperature curves, and the side-play amount of reference voltage is less than positive and negative 0.0067%.Please refer to Figure 20 and Figure 21, Figure 20 is the simulation curve figure of reference voltage according to yet another embodiment of the invention to output current.Figure 21 is the simulation curve figure of reference voltage according to yet another embodiment of the invention to system voltage.From Figure 20 and Figure 21, the reference voltage VREF that band gap generating circuit from reference voltage 1700 provides also can both maintain a second stable reference voltage level, as 2.78 volts in the face of the change of output current IL and the change of system voltage VDD.Please refer to Figure 22, Figure 22 is another simulation curve figure of reference voltage according to yet another embodiment of the invention to system voltage.Known in fig. 22, when system voltage VDD is scanned up to 3.5 volts from 2.5 volts, at 2.85 volts, reference voltage VREF can start enter stable the first reference voltage level (2.78 volts) and maintain.
(embodiment of electronic system)
Please refer to Figure 23, Figure 23 is the schematic diagram of the electronic system according to the embodiment of the present invention.Electronic system 2300 comprises band gap generating circuit from reference voltage 2310 and the load 2320 being connected to band gap generating circuit from reference voltage 2310.Band gap generating circuit from reference voltage 2310 can be one of them of band gap generating circuit from reference voltage 200 and 1700 in above-described embodiment, and in order to provide a reference voltage VREF to load 2320 or next stage circuit.Electronic system 2300 can be the system in various types of electronic installation, and electronic installation can be such as hand-held device or running gear etc.
(possible effect of embodiment)
In sum, the band gap generating circuit from reference voltage that proposes of the embodiment of the present invention when the change of cell voltage (magnitude of voltage as battery of mobile phone) with in the face of variation of ambient temperature (between bearing 50 degree to 120 degree Celsius as Celsius) time stable reference voltage independent of cell voltage and environment temperature two parameters can both be provided.
At least one embodiment in the multiple embodiment of this disclosure, band gap generating circuit from reference voltage (corresponding to different output currents) under the change in the face of pull-up resistor can provide stable reference voltage.
The foregoing is only embodiments of the invention, it is also not used to limit to Patent right requirement scope of the present invention.
Claims (10)
1. a band gap generating circuit from reference voltage, in order to provide a reference voltage, is characterized in that, this band gap generating circuit from reference voltage comprises:
One or four end current source circuits, be electrically connected a first system voltage, when this first system voltage is greater than a threshold voltage value, then one first voltage, one second voltage and one first electric current that export of this four ends current source circuit is independent of the change of this first system voltage;
One mu balanced circuit, be electrically connected this four ends current source circuit, this mu balanced circuit receives this first voltage and this second voltage and when being greater than this threshold voltage value when this first system voltage, by this first and this second voltage between stable voltage difference, then this mu balanced circuit exports this reference voltage independent of the change of this first system voltage; And
One temperature-compensation circuit, is electrically connected this four ends current source circuit and this mu balanced circuit, and this temperature-compensation circuit receives this first electric current and temperature curve in order to this reference voltage exported this mu balanced circuit is compensated.
2. band gap generating circuit from reference voltage as claimed in claim 1, is wherein compensated the temperature curve of this reference voltage that this mu balanced circuit exports, being three rank temperature curves by the second-order temperature curve compensation of this reference voltage.
3. band gap generating circuit from reference voltage as claimed in claim 1, wherein when this first system voltage is greater than this threshold voltage value, this first voltage of this four ends current source circuit stable output and this second voltage, and this first electric current of stable output.
4. band gap generating circuit from reference voltage as claimed in claim 1, wherein this four ends current source circuit comprises:
One the first transistor, its drain electrode connects this first system voltage;
One transistor seconds, its drain electrode connects the source electrode of this first transistor, and its source electrode connects the grid of this first transistor, wherein this first and this transistor seconds be depletion transistor; And
One first resistance, its one end connects the source electrode of this transistor seconds, its other end connects the grid of this transistor seconds, wherein when this first system voltage is greater than this threshold voltage value, then this first electric current that this first transistor, this transistor seconds and this first resistance produce is the steady current of the change independent of this first system voltage.
5. band gap generating circuit from reference voltage as claimed in claim 4, this mu balanced circuit comprises:
One third transistor, its drain electrode connects this first system voltage, and its grid connects the grid of this first transistor to receive this first voltage; And
One the 4th transistor, its drain electrode connects the source electrode of this third transistor, and its grid connects the other end of this first resistance to receive this second voltage, and its source electrode connects a pull-up resistor and exports this reference voltage, wherein the 3rd and the 4th transistor is depletion transistor
Wherein make the source voltage of this third transistor be locked in stable magnitude of voltage by this stable first voltage, and then make this reference voltage be locked in one first reference voltage level independent of the change of this first system voltage.
6. band gap generating circuit from reference voltage as claimed in claim 4, this mu balanced circuit comprises:
One the 5th transistor, its drain electrode connects this first system voltage, and its grid connects the source electrode of this first transistor to receive this first voltage; And
One the 6th transistor, its drain electrode connects the source electrode of the 5th transistor, its grid connects the grid of this first transistor to receive this second voltage, its source electrode connects a pull-up resistor and exports this reference voltage, wherein the 5th and the 6th transistor is depletion transistor, wherein make the source voltage of the 5th transistor be locked in stable magnitude of voltage by this stable first voltage, and then make this reference voltage be locked in one first reference voltage level independent of the change of this first system voltage.
7. the band gap generating circuit from reference voltage as described in claim 5 or 6, this temperature-compensation circuit comprises:
One first bipolar transistor, its emitter-base bandgap grading connects a ground voltage;
One second resistance, its one end connects the base stage of this first bipolar transistor;
One the 3rd resistance, its one end connects the other end of this second resistance, and its other end connects the collector of this first bipolar transistor;
One the 4th resistance, its one end connects one end of the 3rd resistance;
One the 5th resistance, its one end connects the other end of the 4th resistance and is connected to the source electrode of the 4th transistor or the 6th transistor;
One second bipolar transistor, its base stage connects the other end of the 3rd resistance, and its collector connects the other end of the 5th resistance;
One the 6th resistance, its one end connects the emitter-base bandgap grading of this second bipolar transistor, its other end connects this ground voltage, wherein makes one second electric current flowing through the 6th resistance be the electric current of positive temperature coefficient (PTC) by the base emitter-base bandgap grading pressure reduction between one first base emitter voltage of this first bipolar transistor and one second base emitter voltage of this second bipolar transistor; And
One the 3rd bipolar transistor, its base stage connects the collector of this second bipolar transistor, and its emitter-base bandgap grading connects this ground voltage, and its collector connects the other end of this first resistance, and the 3rd bipolar transistor has one the 3rd base emitter voltage of negative temperature coefficient,
By adjusting the resistance value of the 5th resistance and the 6th resistance, make this reference voltage be to equal or close to the voltage of zero-temperature coefficient, and this first reference voltage level equal the pressure drop of the 5th resistance and the summation of the 3rd base emitter voltage.
8. band gap generating circuit from reference voltage as claimed in claim 7, wherein by adjust this second and the 3rd the resistance value of resistance be three rank temperature curves by the second-order temperature curve compensation of this reference voltage.
9. band gap generating circuit from reference voltage as claimed in claim 7, this temperature-compensation circuit also comprises:
One the 7th resistance, its one end connects the base stage of the 3rd bipolar transistor, its other end connects this ground voltage, 7th resistance is in order to be promoted to one second reference voltage level by this first reference voltage level of this reference voltage, and wherein this second reference voltage level of this reference voltage equals the summation of the pressure drop of the 5th resistance and the pressure drop of the 7th resistance.
10. an electronic system, is characterized in that, this electronic system comprises:
One band gap generating circuit from reference voltage, is electrically connected a first system voltage, and this band gap generating circuit from reference voltage comprises:
One or four end current source circuits, be electrically connected this first system voltage and work as this first system voltage and be greater than a threshold voltage value, one first voltage that this four ends current source circuit exports, one second voltage and one first electric current are independent of the change of this first system voltage;
One mu balanced circuit, be electrically connected this four ends current source circuit, this mu balanced circuit receives this first voltage and this second voltage and when being greater than this threshold voltage value when this first system voltage, by this first and this second voltage between stable voltage difference, then this mu balanced circuit exports the reference voltage independent of the change of this first system voltage; And
One temperature-compensation circuit, is electrically connected this four ends current source circuit and this mu balanced circuit, and this temperature-compensation circuit receives this first electric current and temperature curve in order to this reference voltage exported this mu balanced circuit is compensated; And
One load, is electrically connected this band gap generating circuit from reference voltage to receive this reference voltage.
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