CN104216185B - Liquid crystal disply device and its preparation method - Google Patents
Liquid crystal disply device and its preparation method Download PDFInfo
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- CN104216185B CN104216185B CN201410239666.2A CN201410239666A CN104216185B CN 104216185 B CN104216185 B CN 104216185B CN 201410239666 A CN201410239666 A CN 201410239666A CN 104216185 B CN104216185 B CN 104216185B
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Abstract
The invention discloses a kind of Liquid crystal disply device and its preparation methods.A kind of liquid crystal display device includes: first substrate and the second substrate;Grid line and data line on the first substrate, grid line and data line cross one another to limit pixel region;It is connected to the thin film transistor (TFT) of grid line and data line;Color-filter layer on thin film transistor (TFT), color-filter layer include the red, green and blue colour filter in respective respective pixel area;In the projection pattern of the boundary of pixel region, the projection pattern includes at least two in red, green and blue colour filter;Pixel electrode on colour filter;First alignment layer on the pixel electrode;The first patterned spacer in the second substrate, the first patterned spacer contact the first alignment layer on projection pattern;And the liquid crystal layer between first substrate and the second substrate.
Description
Cross-reference to related applications
This application claims enjoy on May 31st, 2013 in the South Korea patent application 10-2013- of Korean application
No. 0062593 equity includes in this application by quoting this application as a whole.
Technical field
This disclosure relates to a kind of liquid crystal display devices.Present disclosure further relates to one kind and prevents between adjacent pattern
The light of spacing body leaks and increases the side of the liquid crystal display device and manufacture of the aperture opening ratio liquid crystal display device by saving black matrix
Method.
Background technique
Recently, because liquid crystal display (LCD) device has additional high value because of low-power consumption and good portability, institute
Have become everybody focus of attention using LCD device as next generation display device.
In general, LCD device can be based on the optical anisotropy of liquid crystal (LC) molecule and polarize and drive.Since LC molecule is thin
And it is long, therefore LC molecule can be arranged along specific direction, and the direction of LC molecules align can be by artificially applying electric field to LC points
Son controls.As a result, when changing the arrangement of LC molecule using electric field, due to the light of the LC molecule along LC molecules align direction
Anisotropy is learned, refraction can occur for light so as to show image.
Recent years, wherein thin film transistor (TFT) (TFT) and pixel electrode are arranged in the active matrix LCD (AM- of matrix shape
LCD) device has attracted a lot note that because the device has high-resolution and can very show the image of movement.
Fig. 1 is the sectional view for showing liquid crystal display device according to prior art, and Fig. 2 is to show that the part A of Fig. 1 is put
Big figure.
In Fig. 1, liquid crystal display (LCD) device 1 includes array substrate 10, filter substrate 20 and liquid crystal layer 30, array
Substrate 10 and filter substrate 20 are faced each other and are separated from each other, and liquid crystal layer 30 is inserted into array substrate 10 and filter substrate 20
Between.
A plurality of grid line (not shown) and multiple data lines 16 are formed on the inner surface of array substrate 10.A plurality of grid line and more
Data line 16 intersects to limit multiple pixel region P.Gate insulation layer 14 is formed between a plurality of grid line and multiple data lines 16, and
Thin film transistor (TFT) (TFT) (not shown) is connected to grid line and data line 16.Passivation layer 17 is formed on TFT and 18 shape of pixel electrode
At on passivation layer 17.Pixel electrode 18 is connected to the drain electrode of TFT.
Black matrix 24 is formed on the inner surface of filter substrate 20.Black matrix correspond to a plurality of grid line, multiple data lines and
TFT is to have the lattice shape around each pixel region P.Color-filter layer 26 including red, green and blue colour filter 26a is formed in
In black matrix 24 and public electrode 28 is formed on colour filter 26.Sequentially and repeatedly setting red, green and blue colour filter 26a with
Corresponding multiple pixel region P.In addition, the patterned spacer 40 being in the form of a column is formed on public electrode 28 with each corresponding pixel
The boundary of area P.
For preventing the seal pattern (not shown) of the leakage of liquid crystal layer 30 to be formed about the non-display of display area AA
In region (not shown).First alignment layer (not shown) is formed between liquid crystal layer 30 and array substrate 10 and second orientation layer
(not shown) is formed between liquid crystal layer 30 and filter substrate 20, to provide initial orientation shape to the liquid crystal molecule of liquid crystal layer 30
State.In addition, the first polarising sheet (not shown) is formed on the outer surface of array substrate 10 and the formation (not shown) of the second polarising sheet
On the outer surface of filter substrate 20.Back light unit is (not shown) to be arranged under array substrate 10 to provide light.
When each TFT by the gate signal of a plurality of grid line by being sequentially connected, pass through the data-signal of multiple data lines 16
Sequentially it is applied to the pixel electrode 18 of pixel region P.As a result, being hung down according to what is generated between pixel electrode 18 and public electrode 28
Straight electric field and the liquid crystal molecule for rearranging liquid crystal layer 30, and change the light transmittance of liquid crystal layer 30 to show image.
In Fig. 2, when applying pressure externally to LCD device 1, patterned spacer 40 can deviate and first alignment layer
May due to the end of patterned spacer 40 offset and deteriorate.Light can vertically or obliquely be incident on from back light unit
The deterioration part of one oriented layer.Therefore, light can be caused by the deterioration part of first alignment layer by vertical or oblique incidence light
Leakage.The light leakage of adjacent pattern spacer 40 can be described as blood-shot eye illness deterioration (red-eye deterioration).
Particularly, a part of oblique incidence light transmissive to filter substrate 20, a part of the filter substrate 20
The outside of deterioration part corresponding to first alignment layer.Therefore, the mesh that the light of adjacent pattern spacer 40 leaks in order to prevent
, black matrix 24 can be formed so that the black matrix has the width bigger than the deviation range of patterned spacer 40.For example,
Black matrix 24 can be formed so that the width of the black matrix is twice to four times of the width (diameter) of patterned spacer 40.So
And when forming periphery of the black matrix 24 with abundant overlay pattern spacer 40, the opening portion of pixel region P reduces to make
At the reduction of aperture opening ratio.
Further, since needing the back light unit with high brightness characteristic to compensate the reduction of aperture opening ratio and reach LCD device 1
Suitable brightness, therefore increase the cost and power consumption of LCD device 1.
When array substrate 10 has uneven part on the surface thereof, grid line, gate insulation layer 14, data line 16, TFT
Tr, passivation layer 17 and pixel electrode 18 also have uneven part.Uneven part can cause such as dirty in the AA of display area
The deterioration of the reduction of point and display quality etc.Because array substrate 10 uneven part caused by deterioration to can be described as waveform bad
Change (waviness deterioration).
Particularly, when patterned spacer 40 is formed to correspond to the uneven part of array substrate 10, between patterning
The offset of the end of spacing body 40 increases and the deterioration of first alignment layer aggravation.Further, since the array substrate in uneven part
Clearance distance between 10 and filter substrate 20 is different from the array substrate 10 in other parts and between filter substrate 20
Clearance distance, therefore the cell gap of LCD device 1 uniformity deterioration and display quality reduce.
Summary of the invention
A kind of liquid crystal display device includes: the first and second substrates for facing each other and being separated from each other;In first substrate
Inner surface on grid line and data line, grid line and data line cross one another to limit pixel region;It is connected to grid line and data line
Thin film transistor (TFT);Color-filter layer on thin film transistor (TFT), color-filter layer include the red, green and blue filter in respective respective pixel area
Color device;In the projection pattern of the boundary of pixel region, projection pattern includes at least two in red, green and blue colour filter;In picture
The pixel electrode on color-filter layer in plain area;First alignment layer on the pixel electrode;On the inner surface of the second substrate
First patterned spacer, the first patterned spacer contact the first alignment layer on projection pattern;With in first substrate
Liquid crystal layer between the second substrate.
A kind of method manufacturing liquid crystal display device includes: to form grid line and data line, grid line and number on the first substrate
It crosses one another according to line to limit pixel region;Form the thin film transistor (TFT) for being connected to grid line and data line;The shape on thin film transistor (TFT)
At color-filter layer and the boundary of pixel region formed projection pattern, the color-filter layer include respective respective pixel area it is red,
Green and blue colour filter, the projection pattern include at least two in red, green and blue colour filter;Color-filter layer in pixel region
Upper formation pixel electrode;First alignment layer is formed on the pixel electrode;The first patterned spacer is formed in the second substrate, the
One patterned spacer is contoured to correspond to projection pattern;First substrate is bonded with the second substrate so that the first patterned spacer connects
Touching first alignment layer on projection pattern;And liquid crystal layer is formed between first substrate and the second substrate.
It should be understood that foregoing general description and being described below in detail all be exemplary with it is illustrative, and be intended to pair
Claimed invention provides further instruction.
Detailed description of the invention
Attached drawing is included to provide further understanding of the invention, they are incorporated and constitute this specification
A part;Attached drawing shows embodiments of the present invention and is used to explain the principle of the present invention together with specification.In the accompanying drawings:
Fig. 1 is the sectional view for showing liquid crystal display device according to prior art;
Fig. 2 is the enlarged drawing for showing the part A of Fig. 1;
Fig. 3 is the sectional view for showing liquid crystal display device according to the first embodiment of the present invention;
Fig. 4 A and 4B are show liquid crystal display device according to the first embodiment of the present invention first and second respectively
The sectional view of patterned spacer;
Fig. 5 is the plan view for showing liquid crystal display device according to the second embodiment of the present invention;
Fig. 6 A and 6B are the plane for showing the liquid crystal display device of the third and fourth embodiment according to the present invention respectively
Figure;
Fig. 7 is the plan view for showing liquid crystal display device according to the fifth embodiment of the present invention;
Fig. 8 A is the sectional view for showing liquid crystal display device according to prior art;
Fig. 8 B and 8C are the section for showing the liquid crystal display device of the according to the present invention 6th and first embodiment respectively
Figure;
Fig. 9 A to 9H is the section for showing the method for manufacturing liquid crystal display device according to the first embodiment of the present invention
Figure;With
Figure 10 A to 10H is to show the projection pattern for manufacturing liquid crystal display device according to the first embodiment of the present invention
Method sectional view.
Specific embodiment
Now with detailed reference to preferred embodiment, the example of these embodiments is shown in the accompanying drawings.
Fig. 3 is the sectional view for showing liquid crystal display device according to the first embodiment of the present invention, and Fig. 4 A and 4B divide
It is not the section for showing the first and second patterned spacers of liquid crystal display device according to the first embodiment of the present invention
Figure.
In Fig. 3,4A and 4B, liquid crystal display (LCD) device 100 according to the first embodiment of the present invention includes: tool
There is the first substrate 102 of multiple pixel electrodes 170, color-filter layer 150, projection pattern 151 and multiple public electrodes 173;Have
The second substrate 194 of first patterned spacer 196 and the second patterned spacer 197;With in first substrate 102 and the second base
Liquid crystal layer 195 between plate 194.First substrate 102 is faced each other and is separated from each other with the second substrate 194.In addition, the first base
Plate 102 and the second substrate 194 include display area AA and the non-display area (not shown) around display area AA.Display area
AA include it is multiple have first to third pixel region P1, P2 and P3 pixel region P.
Grid line 108 and common wire 109 are formed on the inner surface of first substrate 102.Grid line 108 and common wire 109 are each other
It is spaced apart and parallel to each other.Grid 105 is connected to grid line 108 and a part of common wire 109 is used as first capacitor device electrode
110。
Such as silica (SiO2) and silicon nitride (SiNx) etc the gate insulation layer 118 of inorganic insulating material be formed in grid
On line 108, grid 105 and common wire 109.
Semiconductor layer 120 is formed on the gate insulation layer 118 on grid 105.Semiconductor layer 120 includes active layer 120a
With the ohmic contact layer 120b on active layer 120a.Active layer 120a may include intrinsic amorphous silicon and ohmic contact layer 120b can
Including doped amorphous silicon.
Data line 130 is formed on gate insulation layer 118, and the illusory figure with the first and second pattern 121a and 121b
Case 121 is formed between data line 130 and gate insulation layer 118.Data line 130 intersects with grid line 108 to limit pixel region P.Cause
Manufacturing process and the dummy pattern 121 formed can have layer identical with semiconductor layer 120 and identical material, and in another reality
Dummy pattern 121 can be saved by applying in mode.
In addition, source electrode 133 and drain electrode 136 are formed on semiconductor layer 120.Source electrode 133 is connected to data line 130 and drains
136 are spaced apart with source electrode 133.136 contact ohmic contact layer 120b of source electrode 133 and drain electrode.In addition, being used as the second capacitor electricity
A part of the drain electrode 136 of pole 138 is formed on first capacitor device electrode 110.
The film that grid 105, gate insulation layer 118, semiconductor layer 120, source electrode 133 and drain electrode 136 constitute switch element is brilliant
Body pipe (TFT) Tr.Although TFT Tr is arranged in the first pixel region P1, TFTTr is additionally arranged at the second pixel region P2 and third
In each pixel region of pixel region P3.In addition, first capacitor device electrode 110, gate insulation layer 118 and the second electrode for capacitors
138 constitute storage StgC.
Such as silica (SiO2) and silicon nitride (SiNx) etc the passivation layer 140 of inorganic insulating material be formed in data
In line 130, source electrode 133 and drain electrode 136.
Color-filter layer 150 including red, green and blue colour filter 150a, 150b and 150c is formed on passivation layer 140.Sequentially
Ground and red, green and blue colour filter 150a, 150b and 150c is repeatedly set to respectively correspond multiple pixel region P, and it is adjacent red, green
Boundary between blue colour filter 150a, 150b and 150c corresponds to grid line 108 and data line 130.For example, red, green and blue colour filter
Device 150a, 150b and 150c respectively correspond the first, second, and third pixel region.
The projection pattern 151 of circular in shape is formed on the passivation layer 140 on grid line 108 with corresponding in the second base
The first patterned spacer 196 and the second patterned spacer 197 on the inner surface of plate 194.Projection pattern 151 is arranged in phase
Boundary between adjacent pixel region P.For example, projection pattern 151 may be provided on grid line 108 or data line 130.In addition, every
One pixel region P, which can correspond to a projection pattern 151 or multiple pixel region P, can correspond to a projection pattern 151.
In addition, projection pattern 151 may include at least two in red, green and blue colour filter 150a, 150b and 150c.Example
Such as, projection pattern 151 may include the first color void formed by two in red, green and blue colour filter 150a, 150b and 150c
If pattern 151a and the second color dummy pattern 151b.Although the first color dummy pattern 151a and in the first embodiment
Second colors dummy pattern 151b is to be formed respectively by red colour filter 150a and indigo plant colour filter 150c, but in another embodiment
First and second color dummy patterns can be formed by red colour filter 150a and green colour filter 150b respectively, or respectively by green colour filter
150b and indigo plant colour filter 150c are formed.Alternatively, protrusion may include respectively by red, green and blue colour filter 150a, 150b and
The first, second, and third color dummy pattern that 150c is formed.
Since the second color dummy pattern 151b and the first color dummy pattern 151a is overlapping and the second color dummy pattern
151b is formed on the first color dummy pattern 151a, therefore projection pattern 151 is from 102 protrusion of first substrate.When externally to
When LCD device 100 applies pressure, the first patterned spacer 196 and the second patterned spacer 197 may shift and
First alignment layer on multiple public electrodes 173 is (not shown) probably due to the first patterned spacer 196 and the second patterning
The offset of the end of spacer 197 and deteriorate.However, due to the protrusion corresponding to projection pattern 151 of first alignment layer
From 102 protrusion of first substrate, therefore the end contact first alignment layer of the first and second patterned spacers 196 and 197 is prominent
Play other parts of the part without contacting first alignment layer.Therefore, deterioration is limited to the protrusion of first alignment layer.
Further, since projection pattern 151 is by least two shapes in red, green and blue colour filter 150a, 150b and 150c
At, therefore projection pattern 151 stops visible light to function as black matrix, and passes through first orientation in the light from back light unit
The deterioration part foregoing description light of layer is stopped by projection pattern 151.Therefore, even if the protrusion when first alignment layer deteriorates
When, also avoid light leakage.
In addition, projection pattern 151 can since vertical incidence light and oblique incidence light are all stopped by projection pattern 151
It is formed to have the deviation range of width (diameter) less than or equal to the first and second patterned spacers 196 and 197 and is greater than
The width (diameter) of first and second patterned spacers 196 and 197.Due to the width and the prior art of projection pattern 151
It is to reduce, therefore increase aperture opening ratio that the width of black matrix, which is compared,.
Although projection pattern 151 is arranged in the boundary of pixel region P in the first embodiment, for example, in grid line 108 or
At data line 130, but in another embodiment, projection pattern is settable at different locations.
Fig. 5 is the plan view for showing liquid crystal display device according to the second embodiment of the present invention.
In Fig. 5, liquid crystal display (LCD) device 200 according to the second embodiment of the present invention includes: with multiple pictures
Plain electrode (not shown), multiple public electrodes (not shown) and color-filter layer (not shown) first substrate (not shown);Have
The second substrate (not shown) of projection pattern 251;And the liquid crystal layer (not shown) between first substrate and the second substrate.First
Substrate is faced each other and is separated from each other with the second substrate.In addition, first substrate and the second substrate include display area AA and enclose
Around the non-display area (not shown) of display area AA.Display area AA includes multiple pixel region P.
Grid line 208, common wire 209 and data line 230 are formed on the inner surface of first substrate.Grid line 208 and common wire
209 are separated from each other and parallel to each other.Data line 230 intersects with grid line 208 to limit pixel region P.
The projection pattern 251 of circular in shape is formed on grid line 208 and common wire 209 with corresponding in the second substrate
The first patterned spacer 296 and the second patterned spacer 297 on inner surface.For example, projection pattern 251 may be provided at grid
With overlapping with grid line 208 and common wire 209 on clearance space between line 208 and common wire 209.In addition, projection pattern 251
It may be formed to have the deviation range that width (diameter) is equal to or less than the first and second patterned spacers 296 and 297.This
Outside, projection pattern 251 may include at least two in red, green and blue colour filter (not shown).Second embodiment removes protrusion
Other structures other than pattern 251 are identical as the structure of first embodiment.
Although there is projection pattern 151 or 251 circular shape (to separate with other patterns in the first and second embodiments
Island), but projection pattern can have different shape in another embodiment.
Fig. 6 A and 6B are the plane for showing the liquid crystal display device of the third and fourth embodiment according to the present invention respectively
Figure.
In figures 6 a and 6b, the liquid crystal display device 300 or 400 of third according to the present invention or the 4th embodiment wraps
It includes: the first substrate with multiple pixel electrodes (not shown), multiple public electrodes (not shown) and color-filter layer (not shown)
(not shown);The second substrate (not shown) with projection pattern 351 or 451;And between first substrate and the second substrate
Liquid crystal layer (not shown).First substrate is faced each other and is separated from each other with the second substrate.In addition, first substrate and the second substrate
Including display area AA and around the non-display area (not shown) of display area AA.Display area AA includes multiple pixel region P.
In fig. 6, grid line 308 and data line 330 are formed on the inner surface of first substrate.Data line 330 and grid line
308 intersect to limit pixel region P.
Projection pattern 351 in a strip shape is formed on data line 330 with corresponding the on the inner surface of the second substrate
One patterned spacer 396 and the second patterned spacer 397.For example, projection pattern 351 can be arranged to along data line 330
Through entire first substrate data line 330 is completely covered.It is equal to or small in addition, projection pattern 351 may be formed to have width
In the deviation range of the first and second patterned spacers 396 and 397.For example, the width comparable data line of projection pattern 351
330 width is big.In addition, projection pattern 351 may include at least two in red, green and blue colour filter (not shown).Third is real
The other structures in addition to projection pattern 351 for applying mode are identical as the structure of first embodiment.
In fig. 6b, grid line 408 and data line 430 are formed on the inner surface of first substrate.Data line 430 and grid line
408 intersect to limit pixel region P.
Projection pattern 451 in a strip shape is formed on grid line 408 with corresponding first on the inner surface of the second substrate
Patterned spacer 496 and the second patterned spacer 497.For example, projection pattern 451 can be disposed through along grid line 408
Entire first substrate is to be completely covered grid line 408.In addition, projection pattern 451 may be formed to have width equal to or less than first
With the deviation range of the second patterned spacer 496 and 497.For example, the width of the width comparable grid line 408 of projection pattern 451
Greatly.In addition, projection pattern 451 may include at least two in red, green and blue colour filter (not shown).4th embodiment is removed
Other structures other than projection pattern 451 are identical as the structure of first embodiment.
In the third and fourth embodiments, due to projection pattern 351 or 451 in a strip shape be along data line 330 or
What grid line 408 was formed, therefore by the first substrate with projection pattern 351 or 451 and can have the first patterned spacer 396
Or 496 and second patterned spacer 397 or 497 the second substrate mutually bond and do not have to consider along projection pattern 351 or 451
Direction alignment error.This improves the freedom degrees in design.
Further, since the projection pattern 351 or 451 of light is stopped to be formed along data line 330 or grid line 408 to function as black
Matrix, projection pattern 351 or 451 is the boundary between adjacent pixel area P, therefore eliminates additional black matrix.As a result, reducing
The number of mask process and material cost is reduced, so that can reduce manufacturing cost.
Fig. 7 is the plan view for showing liquid crystal display device according to the fifth embodiment of the present invention.
In Fig. 7, liquid crystal display (LCD) device 500 according to the fifth embodiment of the present invention includes: with multiple pictures
Plain electrode (not shown), color-filter layer (not shown) and multiple public electrodes (not shown) first substrate (not shown);Have
The second substrate (not shown) of projection pattern 551;And the liquid crystal layer (not shown) between first substrate and the second substrate.First
Substrate is faced each other and is separated from each other with the second substrate.In addition, first substrate and the second substrate include display area AA and enclose
Around the non-display area (not shown) of display area AA.Display area AA includes multiple pixel region P.
Grid line 508, common wire 509 and data line 530 are formed on the inner surface of first substrate.Grid line 508 and common wire
509 are separated from each other and parallel to each other.For example, the clearance space between grid line 508 and common wire 509 can have about 2 μm to about 4
μm width.Data line 530 intersects with grid line 508 to limit pixel region P.
Projection pattern 551 in a strip shape is formed on grid line 508 and common wire 509 with the corresponding interior table in the second substrate
The first and second patterned spacers 596 and 597 on face.For example, can gap between grid line 508 and common wire 509 it is empty
Between projection pattern 551 is disposed through entire first substrate so that grid line 508 and common wire 509 is completely covered.In addition, protrusion figure
Case 551 may be formed to have the deviation range that width is equal to or less than the first and second patterned spacers 596 and 597.For example,
Between the width of the width comparable grid line 508 of projection pattern 551, the width of common wire 509 and grid line 508 and common wire 509
The sum of width of clearance space is big.In addition, projection pattern 551 may include at least two in red, green and blue colour filter (not shown)
It is a.The other structures in addition to projection pattern 551 of 5th embodiment are identical as the structure of first embodiment.
Referring again to Fig. 3,4A and 4B, planarization layer 155 is formed on color-filter layer 150 and projection pattern 151.Planarization
Layer 155 may include that the organic insulating material of light propylene (photo acryl) etc and can such as be formed by rubbing method.In addition,
Planarization layer 155 can be formed to have the flat top surface in addition to the part on projection pattern 151.For example, planarization
Layer 155 can make in addition to the step difference generated by projection pattern 151 because of grid line 108, common wire 109, data line 130, source
The step difference planarization of pole 133 and drain 136 and generation.Therefore, the part of corresponding projection pattern 151 is prominent from planarization layer 155
It rises, and other parts have flat top surface.
Particularly, planarization layer 155 can make the step difference generated by the uneven part of first substrate 102 and because it is red,
Thickness difference between green and blue colour filter 150a, 150b and 150c and the step difference planarization generated.Therefore, it avoids because of first
The waveform that the unevenness of substrate 102 partially generates deteriorates and improves display quality.In another embodiment, work as colour filter
When layer 150 makes the step difference planarization generated by the uneven part of first substrate 102 enough, planarization layer 155 can be saved.
Fig. 8 A is the sectional view for showing liquid crystal display device according to prior art, and Fig. 8 B and 8C are display basis respectively
The sectional view of the liquid crystal display device of 6th and first embodiment of the invention.
In fig. 8 a, grid 13, gate insulation layer 14 and passivation layer 17 are formed in the array substrate 10 with uneven part
On.Since passivation layer 17 is arrived in the uneven part reflection of array substrate 10, passivation layer 17 also has uneven part.Knot
Fruit, the end of the patterned spacer 40 on filter substrate (not shown) is without all contact passivation layers 17.
In the fig. 8b, grid 608, gate insulation layer 618, passivation layer 640 and color-filter layer 650, which are formed in, has unevenness portion
On the first substrate 602 divided.Although passivation layer 640 also has the uneven part of the uneven part of reflection first substrate 602,
But the uneven part of passivation layer 640 is mitigated by color-filter layer 650.It therefore reduces the top table of color-filter layer 650
The irregularity degree in face and end and the color-filter layer for improving the first patterned spacer 696 on the second substrate (not shown)
Contact condition between 650.
In Fig. 8 C, grid 108, gate insulation layer 118, passivation layer 140, color-filter layer 150 and planarization layer 155 are formed in
On first substrate 102 with uneven part.Although passivation layer 140 also has the uneven part of reflection first substrate 102
Uneven part, but the uneven part of passivation layer 140 is mitigated by color-filter layer 150 and planarization layer 155.Cause
This, planarization layer 155 has the flat top surface without irregularity degree, and between the first patterning in the second substrate (not shown)
The end whole contact planarization layer 155 of spacing body 196.Therefore, it avoids and generates because of the uneven part of first substrate 102
Waveform deteriorates and improves display quality.
Referring again to Fig. 3,4A and 4B, planarization layer 155, color-filter layer 150, passivation layer 140 and gate insulation layer 118 have
The public contact hole (not shown) of exposure common wire 109.In addition, planarization layer 155, color-filter layer 150 and passivation layer 140 have
Contact hole 157 is missed in exposure drain electrode 136.
Multiple pixel electrodes 170 and multiple public electrodes 173 are formed on the planarization layer 155 in the AA of display area.It is more
A pixel electrode 170 is arranged alternately with multiple public electrodes 173, and each pixel electrode and each public electrode are in a strip shape.Separately
Outside, multiple pixel electrodes 170 and multiple public electrodes 173 can have such as tin indium oxide (ITO) and indium zinc oxide (IZO) etc
Transparent conductive material or such as molybdenum (Mo), titanizing molybdenum (MoTi) and copper (Cu) etc metal material single layer.Alternatively, multiple
Pixel electrode 170 and multiple public electrodes 173 can have at least two materials of the transparent conductive material and the metal material
The multilayer of material.
Multiple public electrodes 173 are formed as data line 130 is completely covered that (data line 130 is between adjacent pixel area P
Boundary), even if being leaked to avoid the light when saving black matrix through the part of proximity data line 130.
Each electrode of multiple pixel electrodes 170 and multiple public electrodes 173 can be in vertical bar shape or curved strip shape.Curved strip shape
Can at the center of pixel region P with bending part to have symmetrical structure relative to bending part.When multiple pixel electrodes
170 and multiple public electrodes 173 each electrode have curved strip shape when, pixel region P include two domains, to minimize basis
The color difference at visual angle.
Multiple pixel electrodes 170 are connected to the pixel auxiliary patterns 174 in pixel region P, and pixel auxiliary patterns 174 pass through
It misses contact hole 157 and is connected to drain electrode 136.In addition, multiple public electrodes 173 are connected to the public auxiliary patterns in pixel region P (not
Diagram), and public auxiliary patterns are connected to common wire 109 by public contact hole.
Although it is not shown, but first alignment layer be formed in multiple pixel electrodes 170 and multiple public electrodes 173
In the entire display area AA of one substrate 102.
Multiple first patterned spacers 196 and multiple second patterned spacers 197 are formed in the interior of the second substrate 194
On surface.Each patterned spacer of multiple first patterned spacers 196 can have the first height and can be set to pair
Answer the boundary of pixel region P.In addition, each patterned spacer of multiple second patterned spacers 197 can have than first
Highly small second height and the boundary that can be set to respective pixel area P.
Multiple first patterned spacers 196 can be set to corresponding projection pattern 151.Multiple first patterned spacers
196 can contact the first alignment layer on projection pattern 151 to maintain uniform cell gap, and the cell gap is first
Clearance distance between substrate 102 and the second substrate 194.
Multiple second patterned spacers 197 can be set to corresponding projection pattern 151.Multiple second patterned spacers
197 can be spaced apart with the first alignment layer on projection pattern 151.It is more when applying pressure externally to LCD device 100
A second patterned spacer 197 can contact the first alignment layer on projection pattern 151.Due to being applied to multiple first figures
The pressure of case spacer 196 is mitigated by multiple second patterned spacers 197, therefore is avoided and led because of pressure
The deterioration of multiple first patterned spacers 196 caused such as damaged by pressure etc.
Although it is not shown, but second orientation layer be formed in multiple first patterned spacers 196 and multiple second figures
In the entire display area of the second substrate 194 of case spacer 197.
Liquid crystal layer 195 is clipped between first alignment layer and second orientation layer.Sealing figure for preventing liquid crystal layer 195 from leaking
Case (not shown) is formed about in the non-display area of display area AA.
According to the present invention first to sixth embodiment LCD device have in-plane switching (IPS) mode, it is plurality of
Pixel electrode and multiple public electrodes are formed on the first substrate and liquid crystal layer is driven by horizontal component of electric field.In addition, according to the present invention
First to sixth embodiment LCD device have TFT providing color filters (COT) type, wherein color-filter layer is formed in the first base
On TFT on plate and without black matrix.However, the LCD device of another embodiment according to the present invention can have twisted-nematic
(TN) mode COT type, wherein pixel electrode and public electrode are respectively formed on first substrate and the second substrate.
According to the present invention first to sixth embodiment LCD device, when externally to LCD device application pressure
When, the deterioration of first alignment layer caused by the offset because of the first patterned spacer is limited by projection pattern, and avoid
The light of neighbouring first patterned spacer leaks.Further, since the deterioration range of first alignment layer by projection pattern by
It minimizes, therefore increases aperture opening ratio.In addition, due to eliminate black matrix and simplify manufacturing process and reduce manufacture at
This.Formed on the first substrate further, since eliminating the black matrix in the second substrate and color-filter layer, thus first substrate and
The second substrate is adhered to one another and does not have to consider alignment error.This improves design freedom and increase aperture opening ratio.
Fig. 9 A to 9H is the section for showing the method for manufacturing liquid crystal display device according to the first embodiment of the present invention
Figure;And Figure 10 A to 10H is the side for showing the projection pattern for manufacturing liquid crystal display device according to the first embodiment of the present invention
The sectional view of method.Manufacturing method of Fig. 9 A to 9H and Figure 10 A to 10H may be used on of the invention second to sixth embodiment.
In Fig. 9 A and 10A, the is formed on glass or plastic first substrate 102 by the first metal material of deposition
One metal layer (not shown), first metal material include aluminium, the aluminium alloy of such as neodymium aluminium (AlNd) etc, copper (Cu),
At least one of copper alloy, molybdenum (Mo), molybdenum alloy of such as titanizing molybdenum (MoTi) etc.First substrate 102 includes viewing area
Domain AA and non-display area (not shown) around display area AA.Display area AA includes with first to third pixel region
Multiple pixel region P of P1, P2 and P3.
The first metal layer is patterned to form grid 105, grid line 108 and common wire 109 by the first mask process.The
One mask process can be photoetching process, the photoetching process include photoresist application step, using photomask step of exposure,
The strip step of the development step of the photoresist of exposure, the etching step of the first metal layer and photoresist.
Grid 105, grid line 108 and common wire 109 can have the single layer or first of one of the first metal material material
The multilayer of at least two materials in metal material.Grid 105 is connected to grid line 108 and first capacitor device electrode 110 is connected to
Common wire 109.Grid line 108 is separated from each other and parallel to each other with common wire 109.A part of common wire 109 is used as first
Electrode for capacitors 110.
By depositing such as silica (SiO2) and silicon nitride (SiNx) etc inorganic insulating material come in grid 105, grid
Gate insulation layer 118 is formed on line 108 and common wire 109.Gate insulation layer 118 can cover the whole surface of first substrate 102.
In Fig. 9 B and 10B, sequentially formed on gate insulation layer 118 by deposition intrinsic amorphous silicon and doped amorphous silicon
Intrinsic amorphous silicon layer (not shown) and doped amorphous silicon layer (not shown).In addition, being adulterated by the second metal material of deposition
Form second metal layer on amorphous silicon layer, second metal material include aluminium, such as neodymium aluminium (AlNd) etc aluminium alloy,
At least one of copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy of such as titanizing molybdenum (MoTi) etc.Second metal layer can have
There are the single layer of one of the second metal material material or the multilayer of at least two materials in the second metal material.
The single photo mask with half transmitting region is utilized by the second mask process or passes through second and third mask work
Skill is successively patterned second metal layer, doped amorphous silicon layer and intrinsic amorphous silicon layer using respective photomask, with exhausted in grid
The semiconductor layer 120 with active layer 120a and ohmic contact layer 120b is formed on edge layer 118, on semiconductor layer 120
Source electrode 133 and drain electrode 136 and data line 130.The active layer 120a of intrinsic amorphous silicon may be provided on grid 105, and adulterate
The ohmic contact layer 120b of amorphous silicon may be provided on the both ends of active layer 120a.Source electrode 133 can be connected to data line 130 and
Drain electrode 136 is spaced apart with source electrode 133.Data line 130 can intersect with grid line 108 to limit pixel region P.
Be used as the drain electrode 136 of the second electrode for capacitors 138 a part can it is overlapping with first capacitor device electrode 110 so that
First capacitor device electrode 110, gate insulation layer 118 and the second electrode for capacitors 138 constitute storage StgC.In addition, grid
105, gate insulation layer 118, semiconductor layer 120, source electrode 133 and drain electrode 136 constitute thin film transistor (TFT) (TFT) Tr of switch element.
Fig. 9 B is exemplarily illustrated utilizes the single photo mask with half transmitting region to be formed by the second mask process
Data line 130, source electrode 133 and drain electrode 136.Half transmitting region may include slit pattern or halftoning (halftone) pattern.
Due to data line 130, source electrode 133 and drain electrode 136 be by using single photo mask to second metal layer, doped amorphous silicon layer and
Intrinsic amorphous silicon pattern layers and formed, therefore with the first pattern 121a and the second pattern 121b 121 shape of dummy pattern
At between data line 130 and gate insulation layer 118.First pattern 121a and the second pattern 121b can be respectively provided with and active layer
120a and the identical layer of ohmic contact layer 120b and identical material.When by second and third mask process utilize respective light
When mask forms data line 130, source electrode 133 and drain electrode 136, dummy pattern 121 can be saved.
In Fig. 9 C and 10C, by depositing such as silica (SiO2) and silicon nitride (SiNx) etc inorganic insulating material
To form passivation layer 140 on data line 130, TFT Tr and storage StgC.Passivation layer 140 can cover first substrate
102 whole surface.
The channel region of TFT Tr is an exposure to the active layer 120a between source electrode 133 and drain electrode 136, and the channel region may
It is polluted by (Fig. 9 H's and 10H) color-filter layer 150 of contact active layer 120a, so that TFT Tr may deteriorate.In order to avoid having
The purpose of the pollution of active layer 120a forms passivation layer 140 on TFT Tr.Passivation layer 140 can be saved in another embodiment.
In Fig. 9 D and 10D, the feux rouges photoresist (PR) including haematochrome is being formed on passivation layer 140 by coating method
After layer (not shown), red colour filter 150a is formed in the first pixel region P1 by red PR layers of step of exposure and development step
And the boundary between adjacent pixel area P forms red (first) color dummy pattern 151a.For example, red color dummy pattern
151a may be provided on the clearance space between grid line 108 and common wire 109, grid line 108 or data line 130.In addition, beauty
Color dummy pattern 151a can rounded or strip.It is empty that Figure 10 D is exemplarily illustrated rounded and on grid 108 red color
If pattern 151a.In another embodiment that (Figure 10 F's) projection pattern 151 includes green and blue color dummy pattern, it can save
Remove red color dummy pattern 151a.
In Fig. 9 E and 10E, packet is formed on red colour filter 150a and red color dummy pattern 151a by coating method
After green (PR) layer (not shown) for including marennin, through green PR layers of step of exposure and development step in the second pixel region P2
Form green colour filter 150b.Although eliminating green color dummy pattern in Figure 10 E, green color is empty in another embodiment
If pattern may be formed at the boundary between adjacent pixel area P, projection pattern includes red and green in another embodiment
Color dummy pattern, green and blue color dummy pattern or red, green and blue color dummy pattern.Green color dummy pattern can be in circle
Shape or strip.
In Fig. 9 F and 10F, being formed on red colour filter 150a and green colour filter 150b by coating method includes blue
After blue light photoresist (PR) layer (not shown) of element, through blue PR layers of step of exposure and development step in third pixel region P3
It forms indigo plant colour filter 150c and the boundary between adjacent pixel area P forms blue (second) color dummy pattern 151b.For example,
Blue color dummy pattern 151b may be provided at clearance space, grid line 108 or data line 130 between grid line 108 and common wire 109
On.In addition, blue color dummy pattern 151b can rounded or strip.Figure 10 F is exemplarily illustrated rounded and in grid 108
On blue color dummy pattern 151b.In another embodiment that projection pattern 151 includes red and green color dummy pattern,
Blue color dummy pattern 151b can be saved.
Red, green and blue colour filter 150a, 150b and 150c constitute color-filter layer 150, and red color dummy pattern 151a and
Blue color dummy pattern 151b constitutes projection pattern 151.Although being sequentially formed red, green and blue colour filter in the first embodiment
Device 150a, 150b and 150c, but the shape of red, green and blue colour filter 150a, 150b and 150c can be changed in another embodiment
At sequence.In addition, although projection pattern 151 includes that red color dummy pattern 151a and blue color are illusory in the first embodiment
Pattern 151b, but projection pattern 151 may include red in another embodiment and green color dummy pattern, green and blue color are illusory
Pattern or red, green and blue color dummy pattern.
Red, green and blue colour filter 150a, 150b and 150c have the leak hole dh of the passivation layer 140 on exposure drain electrode 136
With the common aperture (not shown) of the passivation layer 140 on exposure common wire 109.In another implementation for wherein saving passivation layer 140
In mode, leak hole dh can expose drain electrode 136 and common aperture can expose the gate insulation layer 118 on common wire 109.
In Fig. 9 G and 10G, by being coated with the organic insulating material of such as light propylene etc come in color-filter layer 150 and prominent
It rises and forms planarization layer 155 on pattern 151.Planarization layer 155 can cover the whole surface of first substrate 102.In addition, planarization
Layer 155 may be formed to have the flat top surface in addition to the part on projection pattern 151.For example, planarization layer 155 can
It is flat eliminate other than the step difference generated by projection pattern 151 because of grid line 108, common wire 109, data line 130, source electrode
133 and drain electrode 136 and generate step difference.Particularly, since planarization layer 155 makes the uneven part because of first substrate 102
And the step difference planarization generated, therefore avoid the waveform deterioration generated by the uneven part of first substrate 102 and mention
High display quality.
Since planarization layer 155 has thickness similar with color-filter layer 150, correspond to the portion of projection pattern 151
Divide from 155 protrusion of planarization layer.For example, each layer of color-filter layer 150 and planarization layer 155 can have about 1 μm to about 1.5 μm
Thickness.
Then, by third mask process by planarization layer 155 be patterned to the first opening with corresponding leak hole dh and
Second opening of corresponding common aperture (not shown), the third mask process includes the step of exposure and development of planarization layer 155
Step.The grid as a result, passivation layer 140 and second on the first opening exposure drain electrode 136 are open on exposure common wire 109 are exhausted
Edge layer 118.In another embodiment for saving passivation layer 140, the first opening can expose drain electrode 136.
Then, passivation layer 140 is removed by the first opening and leak hole dh with dry-etching method, and is passed through with dry-etching method
Second opening and common aperture remove passivation layer 140 and gate insulation layer 118, so that form exposure drain electrode 136 misses 157 He of contact hole
The public contact hole (not shown) of exposure common wire 109.In another embodiment for saving passivation layer 140, with dry ecthing side
Method removes gate insulation layer 118 by the second opening and common aperture.
In Fig. 9 H and 10H, pass through the third metal material of deposition such as molybdenum (Mo), titanizing molybdenum (MoTi) and copper (Cu) etc
One of material and the transparent conductive material of such as indium tin oxide (ITO) and indium-zinc oxide (IZO) etc have leakage
Conductive material layer (not shown) is formed on the planarization layer 155 of contact hole 157 and public contact hole.
Then, by the 4th mask process by conductive material pattern layers to form multiple pixel electrodes in pixel region P
170, multiple public electrodes 173, pixel auxiliary patterns 174 and public auxiliary patterns.Be arranged alternately multiple pixel electrodes 170 with it is more
A public electrode 173, each pixel electrode 170 and each public electrode are in a strip shape.In addition, pixel auxiliary patterns 174 connect
Multiple pixel electrodes 170, and pixel auxiliary patterns 174 are connected to drain electrode 136 by missing contact hole 157.In addition, public auxiliary figure
Case connects multiple public electrodes 173, and public auxiliary patterns are connected to common wire 109 by public contact hole.
Multiple public electrodes 173 are formed as data line 130 is completely covered that (data line 130 is between adjacent pixel area P
Boundary), even if to avoid passing through the leakage of the light of the part of proximity data line 130 when saving black matrix.
Then, first alignment layer (not shown) is formed on multiple pixel electrodes 170 and multiple public electrodes 173, thus
Complete the array substrate for being used for LCD device.First alignment layer can cover the entire display area AA of first substrate 102.Multiple pictures
Each electrode of plain electrode 170 and multiple public electrodes 173 is in curved strip shape.Curved strip shape can have at the center of pixel region P
There is bending part to have the symmetrical structure relative to bending part.In addition, data line 130 can have bending part.When multiple
When each electrode of pixel electrode 170 and multiple public electrodes 173 is in curved strip shape, pixel region P include two regions to
Energy minimization is according to the color difference at visual angle.
Referring again to Fig. 4 A, by be coated with and pattern the organic material of such as polyimides (polyimide) etc come
Multiple first patterned spacers 196 and multiple second patterned spacers 197 are formed in the second substrate 194.Pass through utilization
The mask process of single photo mask with half transmitting region patterns organic material, so that multiple first patterned spacers
196 with the first height and multiple second patterned spacers 197 have second height smaller than the first height.Multiple first
Second orientation layer (not shown) is formed in patterned spacer 196 and multiple second patterned spacers 197, to complete colour filter
Device substrate.
Referring again to FIGS. 3,4A and 4B, sealing is formed on the marginal portion of one of first substrate 102 and the second substrate 194
After pattern (not shown), first substrate 102 and the second substrate 194 are bonded so that projection pattern 151 contacts multiple first figures
Case spacer 196 and face multiple second patterned spacers 197, to complete LCD device.
In this way, in the liquid crystal display device according to present disclosure, since projection pattern on the first substrate is corresponding
In the first and second patterned spacers in the second substrate, therefore even if when applying pressure from outside, because of first and the
The displacement and friction of two patterned spacers and the deterioration of first alignment layer generated are confined to the protrusion of first alignment layer.
Therefore display quality is improved.
Further, since projection pattern is by least two formation in red, green and blue colour filter, therefore projection pattern is used as
Stop the black matrix of light.As a result, even if also avoiding in first alignment layer deterioration by between neighbouring first and second patterning
The light of the part of spacing body is revealed.
In addition, first and second substrates are adhered to one another and do not have to examine when projection pattern is along data line or grid line in a strip shape
Consider the alignment error along the direction of projection pattern.This improves the freedom degrees in design.
Further, since stopping light along data line or grid line projection pattern in a strip shape, therefore eliminate additional black matrix.
As a result, reducing the number of mask process and reducing material cost so that can reduce manufacturing cost.
Will be readily apparent to those of skill in the art is, without departing substantially from the spirit or scope of the present invention the case where
Under, it can various modifications and variations can be made in the array substrate for liquid crystal display device of present disclosure.Accordingly, it is intended to make
The present invention covers these modifications and variations of the invention, as long as these modifications and variations fall in the appended claims and its are equal
In the range of object.
Claims (17)
1. a kind of liquid crystal display device, the liquid crystal display device include:
First substrate and the second substrate, the first substrate and the second substrate are faced each other and are separated from each other;
Grid line and data line on the inner surface of the first substrate, the grid line and the data line cross one another to limit
Pixel region;
On the first substrate, the thin film transistor (TFT) that is connected to the grid line and the data line;
Color-filter layer on the thin film transistor (TFT), the color-filter layer include the red, green and blue filter in respective respective pixel area
Color device;
On the first substrate, the projection pattern of boundary in the pixel region, the projection pattern include it is described it is red,
At least two in green and blue colour filter;
Pixel electrode, the pixel electrode is on the colour filter in the pixel region;
First alignment layer on the pixel electrode, by the projection pattern, the first alignment layer includes protrusion;
The planarization layer of organic material, the planarization layer is between the color-filter layer and the first alignment layer;
The first patterned spacer on the inner surface of the second substrate;
Second orientation layer in first patterned spacer, the second orientation in first patterned spacer
The first alignment layer of the layer contact on the projection pattern;
Liquid crystal layer between the first substrate and the second substrate;With
Wherein the width of the projection pattern is greater than the width of first patterned spacer;
Wherein when applying pressure from outside, the end of first patterned spacer shifts;
Wherein the width of the projection pattern is equal to or less than the deviation range of the end of first patterned spacer;
Wherein the protrusion of the first alignment layer corresponds to first patterned spacer;
Wherein the first alignment layer and second orientation layer setting are spaced in the projection pattern and first patterning
Between part;And
Wherein other parts protrusion of the part of the correspondence of the planarization layer projection pattern relative to the planarization layer.
2. the apparatus according to claim 1, described device further includes parallel with the grid line and is spaced apart with the grid line
Common wire;With
The public electrode parallel and spaced apart with the pixel electrode,
Wherein each electrode of the pixel electrode and the public electrode is in a strip shape,
Wherein the pixel electrode and the public electrode are alternating with each other and parallel to each other,
Wherein the pixel electrode is connected to the thin film transistor (TFT), and
Wherein the public electrode is connected to the common wire.
3. the apparatus of claim 2, described device further includes the passivation layer of inorganic material, and the passivation layer is described
Between thin film transistor (TFT) and the color-filter layer.
4. device according to claim 3, wherein the projection pattern is rounded, and wherein the projection pattern setting exists
On clearance space, the grid line between the grid line and the common wire and one in the data line.
5. device according to claim 3, wherein the projection pattern is in a strip shape, and wherein the projection pattern setting exists
On clearance space, the grid line between the grid line and the common wire and one in the data line.
6. device according to claim 3, wherein the planarization layer, the color-filter layer and the passivation layer have cruelly
Reveal the contact hole of missing of the drain electrode of the thin film transistor (TFT), and the planarization layer, the color-filter layer, the passivation layer and described
Gate insulation layer has the public contact hole of the exposure common wire,
Wherein the pixel electrode is connected to the pixel auxiliary patterns on the planarization layer, and the pixel auxiliary patterns are logical
Contact hole, which is missed, described in crossing is connected to the drain electrode, and
Wherein the public electrode is connected to the public auxiliary electrode on the planarization layer, and the public auxiliary electrode is logical
It crosses the public contact hole and is connected to the common wire.
7. device according to claim 3, wherein the data line is completely covered in the public electrode.
8. device according to claim 3, described device further includes the second figure on the inner surface of the second substrate
Case spacer, wherein first patterned spacer have first height, and second patterned spacer have than
The second small height of first height.
9. a kind of method for manufacturing liquid crystal display device, which comprises
It forms grid line on the first substrate and data line, the grid line and the data line crosses one another to limit pixel region;
The thin film transistor (TFT) for being connected to the grid line and the data line is formed on the first substrate;
Color-filter layer is formed on the thin film transistor (TFT) and on the first substrate in the boundary shape of the pixel region
At projection pattern, the color-filter layer includes the red, green and blue colour filter for respectively corresponding to the pixel region, the projection pattern packet
Include at least two in the red, green and blue colour filter;
Pixel electrode is formed on the color-filter layer in the pixel region;
First alignment layer is formed on the pixel electrode, by the projection pattern, the first alignment layer includes protrusion
Point;
The planarization layer of organic material is formed between the color-filter layer and the first alignment layer;
The first patterned spacer is formed on the second substrate, and first patterned spacer is contoured to correspond to described prominent
Play pattern;
Second orientation layer is formed in first patterned spacer;
The first substrate and the second substrate are bonded, so that the second orientation in first patterned spacer
The first alignment layer of the layer contact on the projection pattern;With
Liquid crystal layer is formed between the first substrate and the second substrate;
Wherein the width of the projection pattern is greater than the width of first patterned spacer;
Wherein when applying pressure from outside, the end of first patterned spacer shifts;
Wherein the width of the projection pattern is equal to or less than the deviation range of the end of first patterned spacer;
Wherein the protrusion of the first alignment layer corresponds to first patterned spacer;
Wherein the first alignment layer and second orientation layer setting are spaced in the projection pattern and first patterning
Between part;And
Wherein other parts protrusion of the part of the correspondence of the planarization layer projection pattern relative to the planarization layer.
10. according to the method described in claim 9, the method also includes:
Form the common wire parallel and spaced apart with the grid line;With
The public electrode parallel and spaced apart with the pixel electrode is formed,
Wherein each electrode of the pixel electrode and the public electrode is in a strip shape,
Wherein the pixel electrode is alternating with each other and parallel to each other with the public electrode,
Wherein the pixel electrode is connected to the thin film transistor (TFT), and
Wherein the public electrode is connected to the common wire.
11. according to the method described in claim 10, the method also includes:
The passivation layer of inorganic material is formed between the thin film transistor (TFT) and the color-filter layer.
12. according to the method for claim 11, wherein the projection pattern is rounded, and the wherein projection pattern setting
On clearance space, the grid line between the grid line and the common wire and one in the data line.
13. according to the method for claim 11, wherein the projection pattern is in a strip shape, and the wherein projection pattern setting
On clearance space, the grid line between the grid line and the common wire and one in the data line.
14. according to the method for claim 11, wherein forming the color-filter layer and the projection pattern includes:
Red photoresist layer is formed on the passivation layer and makes the feux rouges photoresist pattern layers, to be formed in the pixel region
Red colour filter and the boundary of the pixel region formed red color dummy pattern;
Green photoresist layer is formed on the red colour filter and makes the green light photoresist pattern layers, with the shape in the pixel region
Green color dummy pattern is formed at green colour filter and in the boundary of the pixel region;With
Form blue photoresist layer on the red colour filter and the green colour filter and make the blue light photoresist pattern layers, with
Blue colour filter is formed in the pixel region and forms blue color dummy pattern in the boundary of the pixel region,
Wherein at least two in the red color dummy pattern, the green color dummy pattern and the blue color dummy pattern
Constitute the projection pattern.
15. according to the method for claim 11, wherein forming the planarization layer and including:
Leak hole is formed in the planarization layer and common aperture, the leak hole are exposed on the drain electrode of the thin film transistor (TFT)
The passivation layer, the common aperture are exposed to the passivation layer on the common wire;With
Contact hole is missed to be formed by removing the passivation layer via the leak hole, and by removing institute via the common aperture
Passivation layer and the gate insulation layer are stated to form public contact hole, the contact hole of missing exposes the drain electrode, the public contact
The hole exposure common wire, and
It wherein forms the pixel electrode and the public electrode includes:
Pixel auxiliary patterns are formed, the pixel auxiliary patterns are connected to the pixel electrode and miss contact hole connection by described
To the drain electrode;With
Public auxiliary patterns are formed, the public auxiliary patterns are connected to the public electrode and connect by the public contact hole
It is connected to the common wire.
16. according to the method for claim 11, wherein the data line is completely covered in the public electrode.
17. according to the method for claim 11, the method also includes forming the on the inner surface of the second substrate
Two patterned spacers, wherein first patterned spacer has the first height, and second patterned spacer has
There is second height smaller than first height.
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KR1020130062593A KR101984896B1 (en) | 2013-05-31 | 2013-05-31 | Liquid crystal display device and method of fabricating the same |
KR10-2013-0062593 | 2013-05-31 |
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CN104216185A CN104216185A (en) | 2014-12-17 |
CN104216185B true CN104216185B (en) | 2019-07-16 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW513683B (en) * | 2000-01-14 | 2002-12-11 | Fujitsu Ltd | Liquid crystal display device and method of manufacturing the same |
WO2011104962A1 (en) * | 2010-02-26 | 2011-09-01 | シャープ株式会社 | Liquid-crystal display panel |
CN102799020A (en) * | 2012-08-23 | 2012-11-28 | 友达光电股份有限公司 | Embedded touch display and manufacturing method thereof |
CN102819148A (en) * | 2011-06-08 | 2012-12-12 | 三星显示有限公司 | Liquid crystal display |
CN102914922A (en) * | 2011-08-04 | 2013-02-06 | 乐金显示有限公司 | In-plane switching mode liquid crystal display device |
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW513683B (en) * | 2000-01-14 | 2002-12-11 | Fujitsu Ltd | Liquid crystal display device and method of manufacturing the same |
WO2011104962A1 (en) * | 2010-02-26 | 2011-09-01 | シャープ株式会社 | Liquid-crystal display panel |
CN102819148A (en) * | 2011-06-08 | 2012-12-12 | 三星显示有限公司 | Liquid crystal display |
CN102914922A (en) * | 2011-08-04 | 2013-02-06 | 乐金显示有限公司 | In-plane switching mode liquid crystal display device |
CN102799020A (en) * | 2012-08-23 | 2012-11-28 | 友达光电股份有限公司 | Embedded touch display and manufacturing method thereof |
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