CN104202039A - Single-molecular-junction logic gate - Google Patents
Single-molecular-junction logic gate Download PDFInfo
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- CN104202039A CN104202039A CN201410406196.4A CN201410406196A CN104202039A CN 104202039 A CN104202039 A CN 104202039A CN 201410406196 A CN201410406196 A CN 201410406196A CN 104202039 A CN104202039 A CN 104202039A
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- logic gate
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Abstract
The invention discloses a single-molecular-junction logic gate. The single-molecular-junction logic gate comprises a logic gate single molecular junction, a positive electrode, a negative electrode, a laser device and a molecular junction logic gate readout device, wherein the two ends of the logic gate single molecular junction are electrically connected with the positive electrode and the negative electrode respectively; the laser device is arranged over the electrodes; the molecular junction logic gate readout device is arranged on one side of the logic gate single molecular junction, and is arranged close to the logic gate single molecular junction; the emitting end of the laser device points to the logic gate single molecular junction; and laser light emitted by the laser device is laser light of 633 nanometers. Logic operation of the micro-scale logic gate single molecular junction under an electrical control condition is realized, and the logic gate single molecular junction has extremely high logic operating rate and response capability; and meanwhile, real single molecular operation capability is provided by the logic gate single molecular junction, so that an important foundation is laid for the replacement of a silicon semiconductor technology.
Description
Technical field
The present invention relates to a kind of logical device, particularly relate to a kind of unimolecule knot gate.
Background technology
Gate is the basic module on integrated circuit, the widely used computer of people now, it is mainly Si semiconductor integrated circuit, for traditional Si semiconductor integrated circuit, the size height correlation of its operational capability and semiconductor unit, when semiconductor is intensive to a certain extent time, circuit can produce be difficult to overcome overheated and intersect and disturb.Further dwindle electrical conductivity live width, dwindle computer volume, reduce costs with power consumption and improve arithmetic speed, theoretically with technique on several near limits all, in recent years, scientist constantly attempts various nano particle methods and concept, attempt to replace the concept of Si semiconductor as gate, on the one hand, although having a series of nano particle methods can realize corresponding information by introducing nano particle or illumination reads, and then possesses logical gate operations ability, but this class mode is carried out the mode that input information and information read in can not effectively realizing under minute yardstick, simultaneously its information reads and highly relies on liquid phase environment and realize.Described electroconductive molecule knot concept is that just proposed by scientist recently a kind of constructs the semiconductor junction between two electrodes based on single organic molecule by complexing, this molecule knot has the potential logical operation on molecular level that realizes as computing unit, thereby realize the semiconductor preparing process requirement below 10 nanometers, but current research mainly concentrates on its research to molecule junction current voltage characteristic, although therefore there are some reports about molecular switch, this molecule knot gate does not have signal fan-out capability well.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of unimolecule knot gate, by control unimolecule tie apply voltage realize control its Raman signal realize corresponding logical operation, make it there is more miniature scale than traditional silicon semiconductor, successfully solve the overheated and intersection interference that conventional semiconductors is difficult to overcome.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of unimolecule knot gate is provided, comprise: gate unimolecule knot, positive electrode, negative electrode, laser aid and molecule knot gate read-out device, the two ends of gate unimolecule knot are electrically connected with positive electrode and negative electrode respectively, described laser aid is arranged on directly over electrode, molecule knot gate read-out device is arranged on a side of gate unimolecule knot and arranges near gate unimolecule knot, the transmitting terminal of described laser aid points to gate unimolecule knot, described laser aid Emission Lasers is 633 nanometer lasers.
In a preferred embodiment of the present invention, described molecule knot gate read-out device is Raman optical detection apparatus.
In a preferred embodiment of the present invention, described positive electrode and negative electrode are connected with power supply, the controlled voltage of described power supply output size.
In a preferred embodiment of the present invention, described gate unimolecule knot carries out logical gate operations under non-liquid-phase condition as gate minimum unit.
In a preferred embodiment of the present invention, be applied to voltage on the electrode at gate unimolecule knot two ends as the first input signal; Laser aid Emission Lasers is that the laser of 633 nanometers is tied as the second input signal from irradiating gate unimolecule directly over gate unimolecule knot; Whether unimolecule knot is had to Raman optical signalling as output signal, the generating positive and negative voltage of the first input signal is inputted and irradiates gate unimolecule knot and carry out logical operation by gate unimolecule knot through laser aid by positive electrode and negative electrode input, the second input signal, and logic operation result is exported with the optics way of output again.
The invention has the beneficial effects as follows: a kind of gate unimolecule knot of the present invention gate has realized the logical operation of minute yardstick gate unimolecule knot under electricity controlled condition, gate unimolecule knot has high logical operation speed and responding ability, fast operation; The present invention solves the problems such as the overheated and intersection interference in existing Si semiconductor technical field; Meanwhile, this gate molecule knot provides the unimolecule operational capability of real meaning, becomes the important foundation that replaces Si semiconductor technology.
Brief description of the drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing, wherein:
Fig. 1 is the structural representation of unimolecule knot gate of the present invention one preferred embodiment;
Fig. 2 is the molecule junction current voltage curve of unimolecule knot gate of the present invention one preferred embodiment;
Molecule knot raman spectral signal under the different voltages of Fig. 3 unimolecule knot of the present invention gate one preferred embodiment;
The molecule knot height of Fig. 4 unimolecule knot of the present invention gate one preferred embodiment.
In accompanying drawing, the mark of each parts is as follows: 1, gate unimolecule knot, 2, positive electrode, 3, negative electrode, 4, laser aid.
Embodiment
To the technical scheme in the embodiment of the present invention be clearly and completely described below, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making all other embodiment that obtain under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 1 to Fig. 4, the embodiment of the present invention comprises:
A kind of unimolecule knot gate, comprise: gate unimolecule knot 1, positive electrode 2, negative electrode 3, laser aid 4 and molecule knot gate read-out device, the two ends of gate unimolecule knot are electrically connected with positive electrode 2 and negative electrode 3 respectively, described laser aid 4 is arranged on directly over electrode, molecule knot gate read-out device is arranged on a side of gate unimolecule knot and arranges near gate unimolecule knot, the transmitting terminal of described laser aid 4 points to gate unimolecule knot, and described laser aid 4 Emission Lasers are 633 nanometer lasers.
Described molecule knot gate read-out device is Raman optical detection apparatus, effectively detects gate output.
Described positive electrode 2 and negative electrode 3 are connected with power supply, the controlled voltage of described power supply output size.
Described gate unimolecule knot carries out logical gate operations under non-liquid-phase condition as gate minimum unit, make it to have good practicality.
Be applied to voltage on the electrode at gate unimolecule knot two ends as the first input signal; Laser aid Emission Lasers is that the laser of 633 nanometers is tied as the second input signal from irradiating gate unimolecule directly over gate unimolecule knot; Whether unimolecule knot is had to Raman optical signalling as output signal, the generating positive and negative voltage of the first input signal is inputted and irradiates gate unimolecule knot and carry out logical operation by gate unimolecule knot through laser aid by positive electrode and negative electrode input, the second input signal, and logic operation result is exported with the optics way of output again.
Unimolecule gate principle:
As shown in Figure 1, gate unimolecule knot is because the complexing of sulfydryl forms the sparse self-assembled film of one deck by the mode of self assembly on gold thin film surface.On the other hand, by the control of piezoelectric ceramic, the gate unimolecule knot sulfydryl of the other end and the sharpened tip bonding of a gold atom rank, thus realize the behavior of constructing that gate unimolecule is tied.The all experiments of this part are 10
-4under handkerchief condition, complete.This gate unimolecule is become basic logic operations of the present invention unit.To this gate unimolecule knot input the first input signal, by laser, this gate unimolecule knot is inputted to the second input signal by two end electrodes.
Continue from-1.8V to 1.8V to change voltage by applying between needle point and gold substrate, can obtain having the current-voltage curve of characteristic of semiconductor.Constructing successfully of this curve sign stable logic door unimolecule knot reflected gate unimolecule knot electrical characteristic as shown in Figure 2 simultaneously.Meanwhile, can find that, in the time that voltage is greater than 0.8 volt, its dI/dV curve table reveals the behavior of charge injection and tunnelling.By two end electrodes, this gate unimolecule knot forms a set of complete semiconductor control circuit with external circuit.By controlling voltage as input signal, can the control logic gate unimolecule the molecular configuration behavior of knot.Meanwhile, a series of light paths of 633 nanometer lasers process are finally by being introduced into as the needle point of electrode in gate unimolecule knot, and the principle further strengthening by near field, make gate unimolecule knot produce Raman spectrum.We are using Raman signal as output signal.This Raman spectrum power will depend on that gate unimolecule ties inner molecular configuration as shown in Figure 4, and its molecule structure is by the voltage that depends on that electrode two ends apply.
As shown in Figure 1, under red laser device irradiates, when gate unimolecule tie apply voltage and be 0V time, Raman spectrum analysis instrument cannot detect the Raman signal of gate unimolecule knot; Tie when applying voltage and being greater than 1V when gate unimolecule, Raman spectrum analysis instrument can detect the Raman signal of gate unimolecule knot; That ties by the control logic gate unimolecule applies voltage, can control this gate unimolecule knot gate, realizes logic control.
For example defining gate unimolecule knot, to apply voltage be input signal 1, and not applying voltage is input signal 0; Definition is introduced red laser device and is irradiated for input signal 1, irradiates for input signal 0 without laser aid; Defining above-mentioned gate unimolecule, to bear existing raman spectral signal be 1, do not occur that raman spectral signal is 0, and this gate is "AND" gate.
For example defining again gate unimolecule knot, to apply voltage be input signal 0, and not applying voltage is input signal 1; Definition is introduced red laser device and is irradiated for input signal 0, irradiates for input signal 1 without laser aid; Defining above-mentioned gate unimolecule, to bear existing raman spectral signal be 0, do not occur that raman spectral signal is 1, and this gate is "or" gate.
The beneficial effect of list gate unimolecule knot gate of the present invention is:
One, door has been realized the logical operation of minute yardstick gate unimolecule knot under electricity controlled condition, and has high logical operation speed and responding ability;
Two, solve overheated in existing Si semiconductor technical field and intersect the problems such as interference;
Three, simultaneously, this gate unimolecule knot provides the unimolecule operational capability of real meaning, becomes the important foundation that replaces Si semiconductor technology.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes description of the present invention to do; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (4)
1. a unimolecule knot gate, comprise: gate unimolecule knot, positive electrode, negative electrode, laser aid and molecule knot gate read-out device, the two ends of gate unimolecule knot are electrically connected with positive electrode and negative electrode respectively, described laser aid is arranged on directly over positive electrode, molecule knot gate read-out device is arranged on a side of gate unimolecule knot and near gate unimolecule knot, the laser that described laser aid Emission Lasers is 633 nanometers irradiates gate unimolecule knot directly over gate unimolecule knot.
2. unimolecule knot gate according to claim 1, is characterized in that, described molecule knot gate read-out device is Raman optical detection apparatus.
3. unimolecule knot gate according to claim 1, is characterized in that, described gate unimolecule knot carries out logical gate operations under non-liquid-phase condition as gate minimum unit.
4. unimolecule according to claim 1 knot gate, is characterized in that, is applied to voltage on the electrode at gate unimolecule knot two ends as the first input signal; Laser aid Emission Lasers is that the laser of 633 nanometers is tied as the second input signal from irradiating gate unimolecule directly over gate unimolecule knot; Whether unimolecule knot is had to Raman optical signalling as output signal, the generating positive and negative voltage of the first input signal is inputted and irradiates gate unimolecule knot and carry out logical operation by gate unimolecule knot through laser aid by positive electrode and negative electrode input, the second input signal, and logic operation result is exported with the optics way of output again.
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| CN201410406196.4A CN104202039A (en) | 2014-08-19 | 2014-08-19 | Single-molecular-junction logic gate |
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| CN201410406196.4A CN104202039A (en) | 2014-08-19 | 2014-08-19 | Single-molecular-junction logic gate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107918238A (en) * | 2016-10-09 | 2018-04-17 | 北京化工大学 | A kind of preparation method of the solid logic door based on more fluorescence molecules and hydrotalcite assembling |
Citations (2)
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| US20070090348A1 (en) * | 2004-03-08 | 2007-04-26 | The Ohio State University Research Foundation | Electronic juction devices featuring redox electrodes |
| CN102624379A (en) * | 2011-01-27 | 2012-08-01 | 国家纳米科学中心 | Logic gate |
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2014
- 2014-08-19 CN CN201410406196.4A patent/CN104202039A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070090348A1 (en) * | 2004-03-08 | 2007-04-26 | The Ohio State University Research Foundation | Electronic juction devices featuring redox electrodes |
| CN102624379A (en) * | 2011-01-27 | 2012-08-01 | 国家纳米科学中心 | Logic gate |
Non-Patent Citations (3)
| Title |
|---|
| JING-HUA TIAN, ETAL: "Study of Molecular Junctions with a Combined Surface-Enhanced Raman and Mechanically Controllable Break Junction Method", 《7TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2007. IEEE-NANO 2007》 * |
| 朱卫华: "分子逻辑门", 《山西大同大学学报(自然科学版)》 * |
| 邹文君: "金电极对的电化学可控构筑与表面增强拉曼光谱研究", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107918238A (en) * | 2016-10-09 | 2018-04-17 | 北京化工大学 | A kind of preparation method of the solid logic door based on more fluorescence molecules and hydrotalcite assembling |
| CN107918238B (en) * | 2016-10-09 | 2019-12-24 | 北京化工大学 | Preparation method of solid-state logic gate assembled based on multi-fluorescent molecules and hydrotalcite |
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