CN104201560B - Semiconductor chip laser module and its heat dissipating method - Google Patents
Semiconductor chip laser module and its heat dissipating method Download PDFInfo
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- CN104201560B CN104201560B CN201410468407.7A CN201410468407A CN104201560B CN 104201560 B CN104201560 B CN 104201560B CN 201410468407 A CN201410468407 A CN 201410468407A CN 104201560 B CN104201560 B CN 104201560B
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- heat
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Abstract
A kind of semiconductor chip laser module provided by the invention, it is characterised in that including：It is heat sink；Inorganic heat superconductor；And semiconductor laser device, be fixed on it is described heat sink, wherein, the semiconductor laser device, have：Chip cooling unit and light path heat-sink unit；The chip cooling unit, it is fixed on the inwall of the semiconductor laser device；The light path heat-sink unit, is fixed on the inwall of semiconductor laser device, the chip cooling unit, comprising：Chip, associated gripper and copper-based seat；The chip is fixed among the associated gripper；The side of the copper-based seat is mutually fixed with the associated gripper, and the inwall of opposite side and semiconductor laser device is mutually fixed, the inorganic heat superconductor, is filled in the junction of above-mentioned each part.
Description
Technical field
The present invention relates to semiconductor chip laser module field of radiating, more particularly to a kind of inorganic heat superconductor is to Gao Gong
The semiconductor chip laser module and its heat dissipating method that rate semiconductor chip laser module is radiated.
Background technology
Semiconductor laser is the laser by the use of semi-conducting material as operation material, and conventional operation material has GaAs
(GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulphide (ZnS) etc..For high power laser light device, its electric light turns
It is about 50% to change efficiency, and remaining electric energy can produce used heat, so that the temperature of semiconductor chip rapidly rises.It is however, warm
Degree characteristic is a key property of semi-conducting material, and the influence of its noise spectra of semiconductor lasers mainly has three aspects：
First, generally, the emission wavelength of semiconductor laser is varied with temperature as 0.2-0.3nm/ DEG C, i.e. temperature
About 3 DEG C are often raised, the emission wavelength of semiconductor laser changes 1nm, the increase of simultaneous spectral width.Therefore, temperature
The wavelength stability of noise spectra of semiconductor lasers is without being suspected to have important influence.
Secondly, when forward current flows through pn-junction, heat generation loss can make interface produce temperature rise.As shown by data, in room temperature
Near, temperature often raises 1 DEG C, and the luminous intensity of semiconductor laser can correspondingly reduce 1% or so, when chip can not be completed to dissipate
Heat and when steeply rising its temperature, the operating efficiency of semiconductor laser will have a greatly reduced quality.
Again, the semiconductor chip made of semi-conducting material has certain thermal coefficient of expansion.If semiconductor chip
It can not in time complete to radiate, the temperature of chip can be caused to gradually rise.When temperature exceedes its thermal coefficient of expansion, chip will damage
It is bad, greatly reduce reliability.
In view of the job stability of temperature control noise spectra of semiconductor lasers, operating efficiency and long-term reliability suffer from it is great
Influence, this requires device to must be able to semiconductor chip quickly independently radiate, so that semiconductor chip can be
While ensuring output characteristics, service life can also increase.
The radiating of semiconductor laser is divided into the radiating of semiconductor chip and radiating two parts of semiconductor laser module,
This needs complex encapsulation technology.
At present, the conventional technology to semiconductor laser light source heat radiation is：For semiconductor chip：In the upper following table of chip
Face is respectively clamped with one piece of red copper, will be sticked at entirely through heat conductive silica gel on heat sink.Semiconductor chip and its dissipation equipment are loaded on
In one piece of closed mould, semiconductor laser module is formed.
For semiconductor laser module：Module is sticked on time heat sink by heat conductive silica gel, by secondary heat sink by module
Heat derives are gone, so as to realize the radiating to module.
It is existing although its implementation method is fairly simple for the heat dissipating method of current semiconductor laser light resource
Problem also compares more.Such as：First, now heat sink material is generally adopted by copper, although the capacity of heat transmission of copper is good, copper
Thermal coefficient of expansion and semi-conducting material and mismatch, be likely to cause semi-conducting material in radiation processes because of temperature mistake
It is high and damage；2nd, heat is produced by semiconductor chip, passes to heat on heat sink after heat conductive silica gel conducts heat.Although the heat of copper
Conducting power is fine, but it can not accomplish to be heated evenly in a short time, and which results in can be produced in the subregion of copper
Heat build-up phenomenon, general performance are that radiating effect is bad.
The content of the invention
The present invention be in order to solving the above problems and carry out, and it is an object of the present invention to provide a kind of utilize inorganic heat superconductor,
The semiconductor chip laser module and its heat dissipating method to be radiated to semiconductor chip laser module.
A kind of semiconductor chip laser module provided by the invention, it is characterised in that including：It is heat sink；Inorganic heat superconduction material
Material；And semiconductor laser device, be fixed on it is heat sink, wherein, semiconductor laser device, have：Chip cooling unit and light path
Heat-sink unit；Chip cooling unit, it is fixed on the inwall of semiconductor laser device；Light path heat-sink unit, it is fixed on semiconductor and swashs
The inwall of optical device, chip cooling unit, comprising：Chip, associated gripper and copper-based seat；Chip is fixed among associated gripper；
The side of copper-based seat is mutually fixed with associated gripper, and the inwall of opposite side and semiconductor laser device is mutually fixed, inorganic heat superconduction material
Material, the junction of above-mentioned each part is filled in, wherein, heat sink contact surface, the contact surface of semiconductor laser device, associated gripper
Contact surface, the contact surface of copper-based seat offer pectination groove, the depth of pectination groove is respectively offers pectination re-entrant part
The half of height, heat sink inside and copper base interior all offer annular groove, and inorganic heat superconductor is filled in pectination groove
In annular groove.
Semiconductor chip laser module provided by the invention, also has the feature that：Heat removal structures, it is installed on and leans on
The heavy place of near-thermal.
Semiconductor chip laser module provided by the invention, also has the feature that：Wherein, heat removal structures can be with
For air cooling equipment or water cooling equipment.
Semiconductor chip laser module heat dissipating method provided by the invention, also has steps of：Step 1：Heat sink one
Two relative surfaces of side, an outer surface of semiconductor laser device and inwall, an outer surface of associated gripper, copper-based seat
Groove is opened up with the side of light path heat-sink unit；Step 2：Inorganic heat superconductor is packed into groove；Step 3：Will
Semiconductor laser device is fixed on heat sink side, and a surface of copper-based seat and light path heat-sink unit are fixed on semiconductor laser
The inwall of device, associated gripper are fixed on another surface of copper-based seat, and the one side of chip scribbles inorganic heat superconductor and clamped
Among associated gripper, wherein, heat sink contact surface, the contact surface of semiconductor laser device, the contact surface, copper-based of associated gripper
The contact surface of seat opens up fluted, and groove be pectination groove, and the depth of pectination groove is high respectively to offer pectination re-entrant part
The half of degree, heat sink inside and copper base interior all offer annular groove, inorganic heat superconductor be filled in pectination groove and
In annular groove.
Semiconductor chip laser module heat dissipating method provided by the invention, also has steps of：Step 4：Start heat
Device is removed, by heat sink conduct heat away.
Semiconductor chip laser module heat dissipating method provided by the invention, also has the feature that：Wherein, heat removes
Device can be air cooling equipment or water cooling equipment.
Invention effect and effect
According to semiconductor chip laser module involved in the present invention and its heat dissipating method, by the use of inorganic heat superconduction material as leading
Hot material, semiconductor chip laser module is radiated.Therefore, semiconductor chip laser module of the invention and its radiating side
Method adds inorganic heat superconductor between the contact surface of each part, can make being heated evenly between radiating element, finally reach
To the effect being integrally heated evenly, chip laser module and the distribution of heat sink low gradient temperature are realized.
Brief description of the drawings
Fig. 1 is the heat transfer theory figure of inorganic heat superconductor of the present invention in embodiment；
Fig. 2 is the structured flowchart of semiconductor chip laser module of the present invention in embodiment；And
Fig. 3 is the flow chart of semiconductor chip laser module radiating of the present invention in embodiment.
Embodiment
Referring to the drawings and embodiment is explained in detail to semiconductor chip and laser module involved in the present invention.
Embodiment
Fig. 1 is the heat transfer theory figure of inorganic heat superconductor of the present invention in embodiment.
As shown in figure 1, inorganic heat superconductor is a kind of new Heat Conduction Material, arbitrary size, arbitrary shape can be made,
Heat energy can be delivered to cold end along cavity wall from hot junction rapidly after medium is heated, that is, realize zero thermal resistance, it is heated equal so as to reach
Even effect.Directly transmitted using inorganic heat superconductor between radiating element, rather than radiating element and inorganic heat
Heat transmission is carried out between superconductor, ensure that the efficiency and speed of heat transfer, also ensure that thermal expansion system between heat-transfer matcrial
Several is consistent.
Fig. 2 is the structured flowchart of semiconductor chip laser module of the present invention in embodiment.
As shown in Fig. 2 semiconductor chip laser module 1000 has semiconductor laser device 1100, inorganic heat superconduction material
Material, heat sink 1200 and heat removal structures 1300.Heavy black line part is inorganic heat superconductor in figure.
Semiconductor laser device 1100 on heat sink 1200 contact surface with offering pectination groove.Semiconductor laser device
1100 with heat sink 1200 contact area it is larger, therefore need more inorganic heat superconductor to carry out heat transfer, therefore comb
Shape groove meets the requirements.It is packed into inorganic heat superconductor in pectination groove, and semiconductor laser device 1100 is fixed on
On heat sink 1200.
Heat removal structures 1300 can be air cooling equipment or water cooling equipment, will be heat sink installed in heat sink 1200 side
1200 rapid heat dissipations come out, prevent heat build-up, and the heat removal structures 1300 in the present embodiment are using air-cooled
Device.
Semiconductor laser device 1100 has：Chip cooling unit 1110 and light path heat-sink unit 1120.
Chip cooling unit 1110 includes：Chip 1112, associated gripper 1111 and copper-based seat 1113.
Comb is all offered on two faces that the lower half of associated gripper 1111 is in contact with chip 1112 and copper-based seat 1113
Shape groove.
Copper-based seat 1113 on the inwall contact surface of semiconductor laser device 1100 with also offering pectination groove, and light path
Pectination groove is also offered on the inwall contact surface of heat-sink unit 1120 and semiconductor laser device 1100.Light path heat-sink unit
1120 are fixed on the inwall of semiconductor laser device 1100.
The depth of pectination groove is respectively to offer the half of pectination re-entrant part height.
The copper-based inside of seat 1113 and heat sink 1200 inside all offer annular groove.Because heat is to enter in an annular manner
What row dissipated, and copper-based seat 1113 is closer apart from chip 1112, it is more direct to the radiating effect of chip 1112, inside it
Open loop connected in star is obvious to the radiating effect of chip 1112.Heat sink 1200 lowermost ends in heat dissipating package equipment, are institutes
There is the final of heat to collect place, carrying out annular groove heat radiation energy to it makes overall heat effectively be dissipated.
Above-mentioned each mutually corresponding groove forms metal enclosed chamber, and inorganic heat superconduction material is packed into metal enclosed chamber
Material, and make to interfix between each part.
The diameter of each groove can be that centimetres can also be micron dimension, only need to semiconductor luminous chip and
The size of its heat abstractor matches.
Chip 1112, which folds up, to be fixed among associated gripper 1111, the lower half of associated gripper 1111 and copper-based seat 1113
Side is mutually fixed.The opposite side of copper-based seat 1113 is mutually fixed with the inwall of semiconductor laser device 1100.
Fig. 3 is the flow chart of semiconductor chip laser module radiating of the present invention in embodiment.
As shown in figure 3, semiconductor chip and laser module radiating, have steps of：
Step S1：
Pectination groove is opened up on contact surface of the semiconductor laser device 1100 with heat sink 1200, in associated gripper 1111
On two faces that lower half is in contact with chip 1112 and copper-based seat 1113 and copper-based seat 1113 and semiconductor laser device
Pectination groove is opened up on 1100 inwall contact surface, it is recessed all to open up annular in the copper-based inside of seat 1113 and heat sink 1200 inside
Groove.
Step S2：
Inorganic heat superconductor is packed into each groove.
Step S3：
Semiconductor laser device 1100 is fixed on to heat sink 1200 side, the copper-based lower surface of seat 1113 and light path radiating are single
Member 1120 is fixed on the inwall of semiconductor laser device 1100, and the lower half of associated gripper 1111 is fixed on the upper of copper-based seat 1113
Surface, chip 1112, which clamps, to be fixed among associated gripper 1111.
Step S4：
Start heat removal structures 1300, the heat distributed in heat sink 1200 is removed.
Heat caused by chip 1112 is reached on copper-based seat 1113 through associated gripper 1111 by inorganic heat superconductor, copper
The inside ringed groove of pedestal 1113 dissipates a part of heat, and its excess heat passes to semiconductor laser device through inorganic heat superconductor
On 1100.Meanwhile the heat on light path heat-sink unit 1120 also reaches semiconductor laser device 1100 through inorganic heat superconductor
On.Heat on semiconductor laser device 1100 is reached on heat sink 1200 by the inorganic heat superconductor in pectination groove.It is heat sink
Annular groove inside 1200 can help it to disperse a part of heat, and its excess heat is taken away by heat removal structures 1300, with
This realizes the radiating of package unit.
The effect of embodiment and effect
Semiconductor chip laser module and its heat dissipating method according to involved by the present embodiment, made using inorganic heat superconductor
For Heat Conduction Material, chip laser module is radiated.Therefore, semiconductor chip laser module and its heat dissipating method of the invention
Inorganic heat superconductor is added between the contact surface of each part, being heated evenly between radiating element can be made, be finally reached
The effect being integrally heated evenly, realize chip, laser module and the distribution of heat sink low gradient temperature.
Semiconductor chip laser module and its heat dissipating method involved by the present embodiment, due to groove, therefore can will
Inorganic heat superconductor is directly embedded into each part, by contact area by One-Dimensional Extended to three-dimensional, is heated evenly each part
Speed faster, the radiating effect of chip is more preferable.
Semiconductor chip laser module and its heat dissipating method involved by the present embodiment, due to heat removal structures, because
This quickly can remove the heat sink heat given out, reach more preferably radiating effect.
Above-mentioned embodiment is the preferred case of the present invention, is not intended to limit protection scope of the present invention.
Claims (6)
- A kind of 1. semiconductor chip laser module, it is characterised in that including：It is heat sink；Inorganic heat superconductor；AndSemiconductor laser device, be fixed on it is described heat sink,Wherein, the semiconductor laser device, has：Chip cooling unit and light path heat-sink unit；The chip cooling unit, it is fixed on the inwall of the semiconductor laser device；The light path heat-sink unit, the inwall of semiconductor laser device is fixed on,The chip cooling unit, comprising：Chip, associated gripper and copper-based seat；The chip is fixed among the associated gripper；The side of the copper-based seat is mutually fixed with the associated gripper, and the inwall of opposite side and semiconductor laser device is mutually fixed,The inorganic heat superconductor, the junction of above-mentioned each part is filled in,Wherein, the heat sink contact surface, the contact surface of the semiconductor laser device, the contact surface of the associated gripper, institute The contact surface for stating copper-based seat offers pectination groove,The depth of the pectination groove is respectively to offer the half of the pectination re-entrant part height,The heat sink inside and the copper base interior all offer annular groove,Inorganic heat superconductor is filled in the pectination groove and the annular groove.
- 2. semiconductor chip laser module according to claim 1, it is characterised in that also include：Heat removal structures, peace Loaded on close to the heat sink place.
- 3. semiconductor chip laser module according to claim 2, it is characterised in that：Wherein, the heat removal structures can be air cooling equipment or water cooling equipment.
- 4. a kind of semiconductor chip laser module heat dissipating method, has steps of：Step 1：Heat sink side, an outer surface of semiconductor laser device and inwall, an outer surface of associated gripper, Two relative surfaces of copper-based seat and the side of light path heat-sink unit open up groove；Step 2：Inorganic heat superconductor is packed into the groove；Step 3：The semiconductor laser device is fixed on the heat sink side, a surface of the copper-based seat and institute The inwall that light path heat-sink unit is fixed on the semiconductor laser device is stated, the associated gripper is fixed on the another of the copper-based seat One surface, the one side of chip scribble the inorganic heat superconductor and are clipped among the associated gripper,Wherein, the heat sink contact surface, the contact surface of the semiconductor laser device, the contact surface of the associated gripper, institute State copper-based seat contact surface open up it is fluted,The groove is pectination groove,The depth of the pectination groove is respectively to offer the half of the pectination re-entrant part height,The heat sink inside and the copper base interior all offer annular groove,Inorganic heat superconductor is filled in the pectination groove and the annular groove.
- 5. semiconductor chip laser module heat dissipating method according to claim 4, also has steps of：Step 4：Start heat removal structures, by the heat sink conduct heat away.
- 6. semiconductor chip laser module heat dissipating method according to claim 5, it is characterised in that：Wherein, the heat removal structures can be air cooling equipment or water cooling equipment.
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| CN201410468407.7A CN104201560B (en) | 2014-09-15 | 2014-09-15 | Semiconductor chip laser module and its heat dissipating method |
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| CN201410468407.7A CN104201560B (en) | 2014-09-15 | 2014-09-15 | Semiconductor chip laser module and its heat dissipating method |
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| JP4068887B2 (en) * | 2002-04-26 | 2008-03-26 | 浜松ホトニクス株式会社 | Semiconductor laser device and cooling method thereof |
| JP3803339B2 (en) * | 2003-01-10 | 2006-08-02 | 松下電器産業株式会社 | Semiconductor laser device |
| US7878232B2 (en) * | 2004-07-09 | 2011-02-01 | GE Lighting Solutions, LLC | Light emitting chip apparatuses with a thermally superconducting heat transfer medium for thermal management |
| KR100716790B1 (en) * | 2005-09-26 | 2007-05-14 | 삼성전기주식회사 | Gallium nitride based semiconductor light emitting diode and method of manufacturing the same |
| US20080212625A1 (en) * | 2007-01-15 | 2008-09-04 | Kabusiki Kaisha Y.Y.L. | Semiconductor device |
| CN202281060U (en) * | 2011-07-09 | 2012-06-20 | 内蒙古华延芯光科技有限公司 | High-voltage LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202308069U (en) * | 2011-11-04 | 2012-07-04 | 汪荃 | LED module group of large power |
| CN102570293A (en) * | 2012-02-13 | 2012-07-11 | 苏州华必大激光有限公司 | High thermal load large power semiconductor laser |
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