CN104201240B - The production technology of a kind of solar cell and use the solar cell that this technique produces - Google Patents
The production technology of a kind of solar cell and use the solar cell that this technique produces Download PDFInfo
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- CN104201240B CN104201240B CN201410432421.1A CN201410432421A CN104201240B CN 104201240 B CN104201240 B CN 104201240B CN 201410432421 A CN201410432421 A CN 201410432421A CN 104201240 B CN104201240 B CN 104201240B
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- solar cell
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002860 competitive effect Effects 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The production technology that the invention discloses a kind of solar cell and the solar cell using this technique to produce thereof, described production technology comprises the following production steps that phosphorosilicate glass plasma etching coated with antireflection film silk screen printing Fast Sintering testing, sorting is removed in the detection Wafer Cleaning pre-scribing of surface wool manufacturing diffusion of supplied materials silicon chip.The present invention introduces pre-scribing process in the general production technology of common crystal silicon solar battery, i.e. after the diffusion operation in existing production technology, silicon chip is carried out pre-scribing, carry out follow-up corresponding operation the most again, so, pre-drawing on silicon chip is made to have the surface of vee-cut also to plate last layer passivating film, thus the edge of PN junction at scribing is served the effect of being effectively protected, the loss of efficiency making the solar cell produced strip cell after cutting is substantially reduced, thus improve the efficiency of linear concentrator assembly, reduce its production cost, it is made to have more competitive advantage compared with ordinary flat assembly.
Description
Technical field
The invention belongs to technical field of solar utilization technique, particularly to the production technology of a kind of solar cell and use the solar cell that this technique produces.
Background technology
Solar energy have cleaning, No Assets region limit, for the mankind forever without exhaustion etc. good characteristic, increasingly favored by people.The photovoltaic module technology kind utilizing solar energy to carry out generating electricity is more, and one of technology of linear concentrator component technology the most most market prospect.This technology utilizes the optic panel with line style concentration structure effectively to reduce the cell piece consumption of normal light photovoltaic assembly, thus reduces photovoltaic module production cost.
But due to so far, the strip solar cell the most not produced specially for linear concentrator component technology, therefore the strip solar cell needed for linear concentrator assembly is all to obtain by cutting common crystal silicon solar battery.But owing to common crystal silicon solar battery being cut at the cut edge so that one side solar cell, particularly neighbouring and sensitive surface edge the Si of PN junction occurs in that the fracture of key, define many dangling bonds, so that the photo-generated carrier produced by photoelectric effect is easy to be formed in edge compound；On the other hand make edge create stress or thermal defect due to cutting, and edge exposes to be contaminated in atmosphere and is also easy to, so that edge becomes the recombination region that carrier is serious, reduce every unit for electrical property parameters of solar cell.It is relatively big that above 2 main causes make the solar cell cutting into strip compare the decline of the common efficiency of solar cell before not cutting, so that the efficiency of linear concentrator assembly reduces, and the advantage that cost of electricity-generating is the biggest compared with ordinary flat assembly.
At present, the production process of common crystal silicon solar battery is mainly: supplied materials silicon chip detection-Wafer Cleaning-surface wool manufacturing-diffusion-remove phosphorosilicate glass (PSG)-plasma etching-coated with antireflection film (PECVD)-silk screen printing-Fast Sintering-testing, sorting, wherein coated with antireflection membrane process is to deposit one layer of silicon nitride anti-reflecting film at silicon chip surface, it can not only play anti-reflection effect on the surface of quasiconductor Si, increase incident intensity, and one layer of good passivation layer can also be formed on the surface of Si, thus reduce the defect recombination rate on Si surface, strengthen minority carrier lifetime, promote the efficiency of crystal silicon solar battery.
Summary of the invention
It is an object of the invention to: need to be cut into strip solar cell for the common crystal silicon solar battery for linear concentrator assembly thus the problem that causes causing efficiency to decline owing to defect recombination rate is very big at strip solar cell cut edge, a kind of loss that can be substantially reduced solar cell cutting behind efficiency is provided, thus promote the whole efficiency of linear concentrating component, the production technology reducing the solar cell of production cost and the solar cell using this technique to produce thereof.
nullThe technical scheme is that and be achieved in that: the production technology of a kind of solar cell，Comprise the following production steps that supplied materials silicon chip detection-Wafer Cleaning-surface wool manufacturing-diffusion-remove phosphorosilicate glass-plasma etching-coated with antireflection film-silk screen printing-Fast Sintering-testing, sorting，It is characterized in that: described silicon chip is after diffusion，Front at silicon chip、The follow-up corresponding position needing solar cell piece cuts into strip solar cell cuts the vee-cut of the 2～50 μm degree of depth in advance，The degree of depth of described vee-cut exceedes PN junction position on silicon chip，Silicon chip after pre-scribing is carried out again phosphorosilicate glass，At the vee-cut of described silicon chip, surface damage layer after pre-scribing is also by going phosphorosilicate glass technique to process，Then silicon chip is carried out coated with antireflection film by after plasma etching，On described silicon chip, the pre-vee-cut surface drawn forms one layer of passivating film by coated with antireflection membrane process，The PN junction edge part that described passivating film ruptures after drawing silicon chip in advance carries out covering protection.
The production technology of a kind of solar cell of the present invention, its described silicon chip is mechanically or laser cuts vee-cut in advance in the front of silicon chip, and the front of described silicon chip is the one side in silicon chip near PN junction.
The solar cell that a kind of production technology used described in the claims produces, including the solar cell piece being made up of p-type matrix and N-type region, PN junction is formed between described p-type matrix and N-type region, it is coated with antireflection film layer in the front of the close PN junction of described solar cell piece, it is characterized in that: on the front of described solar cell, follow-up the corresponding position cutting into strip solar cell is needed to draw vee-cut in advance, the degree of depth of described vee-cut exceedes PN junction position, it is coated with antireflection film layer on described vee-cut surface, described antireflection film layer covers the edge part of PN junction at scribing.
The present invention introduces pre-scribing process in the general production technology of common crystal silicon solar battery, i.e. after the diffusion operation in existing production technology, silicon chip is carried out pre-scribing, carry out follow-up corresponding operation the most again, so, pre-drawing on silicon chip is made to have the surface of vee-cut also to plate last layer passivating film, thus the edge of PN junction at scribing is served the effect of being effectively protected, the loss of efficiency making the solar cell produced strip cell after cutting is substantially reduced, thus improve the efficiency of linear concentrator assembly, reduce its production cost, it is made to have more competitive advantage compared with ordinary flat assembly.
Accompanying drawing explanation
Fig. 1 is the silicon chip structural representation in the present invention after pre-scribing.
Fig. 2 is the silicon chip structural representation in the present invention after coated with antireflection film.
Fig. 3 is the solar cell of the present invention structural representation when follow-up cutting.
Fig. 4 is the structural representation of the strip solar cell that the solar cell of the present invention is formed after cutting.
Labelling in figure: 1 is p-type matrix, 2 is N-type region, and 3 is PN junction, and 4 is antireflection film layer, and 5 is vee-cut, and 6 is scribing groove.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the present invention is described in detail.
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
As Figure 1-4, the production technology of a kind of solar cell, comprise the following production steps that supplied materials silicon chip detection-Wafer Cleaning-surface wool manufacturing-diffusion-pre-scribing-remove phosphorosilicate glass-plasma etching-coated with antireflection film-silk screen printing-Fast Sintering-testing, sorting.
nullDescribed pre-scribing process is particularly as follows: described silicon chip is after diffusion，Mechanically，Such as diamond cut、Emery wheel cutting or laser，Such as Ultra-Violet Laser or iraser etc.，Front at silicon chip、The follow-up corresponding position needing solar cell piece cuts into strip solar cell cuts the vee-cut of the 2～50 μm degree of depth in advance，As shown in Figure 1，The front of described silicon chip is the one side in silicon chip near PN junction，The degree of depth of described vee-cut exceedes PN junction position on silicon chip，Silicon chip after pre-scribing is carried out again phosphorosilicate glass，At the vee-cut of described silicon chip, surface damage layer after pre-scribing is also by going phosphorosilicate glass technique to process，Then silicon chip is carried out coated with antireflection film by after plasma etching，On described silicon chip, the pre-vee-cut surface drawn forms one layer of passivating film by coated with antireflection membrane process，The PN junction edge part that described passivating film ruptures after drawing silicon chip in advance carries out covering protection，As shown in Figure 2.
A kind of solar cell using above-mentioned production technology to produce, including the solar cell piece being made up of p-type matrix 1 and N-type region 2, PN junction 3 is formed between described p-type matrix 1 and N-type region 2, silicon chip passes through diffusion, P-type silicon sheet makes PN junction by diffusion n type material, or form PN junction by diffusion P-type material in N-type silicon chip, it is coated with antireflection film layer 4 in the front of the close PN junction of described solar cell piece, on the front of described solar cell, follow-up the corresponding position cutting into strip solar cell is needed to draw vee-cut 5 in advance, the degree of depth of described vee-cut 5 exceedes PN junction 3 position, it is coated with antireflection film layer 4 on described vee-cut 5 surface, described antireflection film layer 4 covers the edge part of PN junction 3 at scribing.
The solar cell prepared by this process follow-up carry out cutting into strip solar cell time only need to then carry out sliver process, as shown in Figure 3 from 1/3～2/3 deep scribing groove 6 of the cutting solar cell piece thickness in the back side corresponding with pre-scribing.As shown in Figure 4, near strip solar cell PN junction and territory, front side emitter polar region is passivated protection by SiNx to the cross sectional shape of the strip solar cell of final gained, thus effectively reduces the compound action of carrier.Although not being effectively protected in the cut edge of the matrix region of strip solar cell, but the edge compound action caused owing to cutting effect focuses primarily upon near PN junction and emitter stage, and the impact of the compound action of matrix is the most notable.Therefore use this technique that the loss of efficiency of the solar cell produced strip cell after cutting is substantially reduced, thus improve the efficiency of linear concentrator assembly, reduce its production cost so that it is compared with ordinary flat assembly, have more competitive advantage.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent and improvement etc. made within the spirit and principles in the present invention, should be included within the scope of the present invention.
Claims (3)
- null1. the production technology of a solar cell，Comprise the following production steps that supplied materials silicon chip detection-Wafer Cleaning-surface wool manufacturing-diffusion-remove phosphorosilicate glass-plasma etching-coated with antireflection film-silk screen printing-Fast Sintering-testing, sorting，It is characterized in that: described silicon chip is after diffusion，Front at silicon chip、The follow-up corresponding position needing solar cell piece cuts into strip solar cell cuts the vee-cut of the 2～50 μm degree of depth in advance，The degree of depth of described vee-cut exceedes PN junction position on silicon chip，Silicon chip after pre-scribing is carried out again phosphorosilicate glass，At the vee-cut of described silicon chip, surface damage layer after pre-scribing is also by going phosphorosilicate glass technique to process，Then silicon chip is carried out coated with antireflection film by after plasma etching，On described silicon chip, the pre-vee-cut surface drawn forms one layer of passivating film by coated with antireflection membrane process，The PN junction edge part that described passivating film ruptures after drawing silicon chip in advance carries out covering protection；Solar cell through pre-scribing carries out cutting into strip solar cell only need to then carry out sliver process from 1/3～2/3 deep scribing groove of the cutting solar cell piece thickness in the back side corresponding with pre-scribing follow-up.
- The production technology of a kind of solar cell the most according to claim 1, it is characterised in that: described silicon chip is mechanically or laser cuts vee-cut in advance in the front of silicon chip, and the front of described silicon chip is the one side in silicon chip near PN junction.
- 3. the solar cell that the production technology used described in the claims produces, including the solar cell piece being made up of p-type matrix (1) and N-type region (2), PN junction (3) is formed between described p-type matrix (1) and N-type region (2), antireflection film layer (4) it is coated with in the front of the close PN junction of described solar cell piece, it is characterized in that: on the front of described solar cell, the follow-up corresponding position needing to cut into strip solar cell has drawn vee-cut (5) in advance, the degree of depth of described vee-cut (5) exceedes PN junction (3) position, it is coated with antireflection film layer (4) on described vee-cut (5) surface, described antireflection film layer (4) covers the edge part of PN junction (3) at scribing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410432421.1A CN104201240B (en) | 2014-08-29 | 2014-08-29 | The production technology of a kind of solar cell and use the solar cell that this technique produces |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410432421.1A CN104201240B (en) | 2014-08-29 | 2014-08-29 | The production technology of a kind of solar cell and use the solar cell that this technique produces |
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| CN104201240A CN104201240A (en) | 2014-12-10 |
| CN104201240B true CN104201240B (en) | 2016-08-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3686940A4 (en) * | 2018-11-23 | 2020-07-29 | Chengdu Yefan Science And Technology Co., Ltd. | Method and system for manufacturing shingled solar cell sheet and shingled photovoltaic assembly |
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| CN105513956A (en) * | 2015-12-18 | 2016-04-20 | 四川钟顺太阳能开发有限公司 | Solar cell corrosion cutting method and solar cell produced by same |
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| CN110808310B (en) * | 2018-08-06 | 2021-08-10 | 德运创鑫(北京)科技有限公司 | Method for reducing cutting efficiency loss of solar cell chip and photovoltaic module |
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| CN111081819B (en) * | 2019-12-31 | 2021-06-08 | 通威太阳能（合肥）有限公司 | Damage-preventing cutting method and device for solar cell |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
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| CN112331741A (en) * | 2020-11-04 | 2021-02-05 | 东方日升（常州）新能源有限公司 | Crystalline silicon solar cell, crystalline silicon solar cell module and manufacturing method of crystalline silicon solar cell module |
| CN114613874A (en) * | 2020-11-25 | 2022-06-10 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing battery piece for forming laminated battery |
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| CN116885044B (en) * | 2023-08-01 | 2024-04-19 | 江苏润阳光伏科技有限公司 | Preparation method for effectively improving TOPCon battery assembly power |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100527450C (en) * | 2007-01-09 | 2009-08-12 | 广镓光电股份有限公司 | Semiconductor optoelectronic component and its cutting method |
| CN102244137A (en) * | 2010-05-14 | 2011-11-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Solar cell and manufacturing method thereof |
| CN101969086B (en) * | 2010-07-29 | 2012-11-14 | 厦门市三安光电科技有限公司 | Preparation method of concentrating solar cell chip capable of preventing edge leakage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3686940A4 (en) * | 2018-11-23 | 2020-07-29 | Chengdu Yefan Science And Technology Co., Ltd. | Method and system for manufacturing shingled solar cell sheet and shingled photovoltaic assembly |
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