CN104201231A - Hybrid three-junction compound photovoltaic cell - Google Patents
Hybrid three-junction compound photovoltaic cell Download PDFInfo
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- CN104201231A CN104201231A CN201410459086.4A CN201410459086A CN104201231A CN 104201231 A CN104201231 A CN 104201231A CN 201410459086 A CN201410459086 A CN 201410459086A CN 104201231 A CN104201231 A CN 104201231A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 34
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 26
- 230000005641 tunneling Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 210000004027 cell Anatomy 0.000 description 31
- 239000010410 layer Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 241001424688 Enceliopsis Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a hybrid three-junction compound photovoltaic cell. The surface of the cell is in a two-level protrusion structure comprising a traditional GaInP/GaAs/Ge three-junction compound photovoltaic cell and a novel InAlAsP/InGaAs/Ge three-junction compound photovoltaic cell which are alternately arranged. The hybrid three-junction compound photovoltaic cell has an optimized energy band structure and allows maximal utilization of solar energy, and photoelectric conversion efficiency and collection efficiency can be improved.
Description
Technical field
The present invention relates to a kind of compound photovoltaic cell, excellent its relates to a kind of many son knot compound photovoltaic cells.
Background technology
III-V compounds of group photovoltaic cell is used in space field at first, but along with the progress of Ji Intraoperative, III-V compounds of group photovoltaic cell also more and more applies to non-space field.Compared with Silicon photrouics, III-V compounds of group photovoltaic cell has larger energy conversion efficiency, and its opto-electronic conversion of III-V compounds of group photovoltaic cell producing by advanced technologies becomes efficiency can exceed 25%, and Silicon photrouics can not exceed 20%.Than Silicon photrouics, III-V compounds of group photovoltaic cell can be by realizing the maximization conversion of many solar radiations with multiple sub-batteries with different band-gap energies;
For III-V compounds of group photovoltaic cell, GaInP/GaAs/Ge is a kind of the most typical the most ripe traditional III-V compounds of group photovoltaic cell, have the bandgap structure of 1.86ev/1.42ev/0.66ev, its density of photocurrent can reach 25mA/cm2; But simple GaInP/GaAs/Ge photovoltaic cell is because the minority diffusion length of Ge battery is less and the absorption coefficient of light is lower in long wave limit, and its short-circuit current density is mainly limited to GaInP top battery, it is therefore also insufficient to the spectral absorption of natural sunlight; Colleague, mostly current how sub-junction photovoltaic battery is to be successively extended in Semiconductor substrate with formation vertical, many knots, often can not as Silicon photrouics, form flocked surface light to confinement effect, existing III-V compounds of group photovoltaic cell needs further to be promoted.
Summary of the invention
In order to make up the deficiency of existing III-V compounds of group photovoltaic cell, further improve the utilance to light, the InAlAsP/IGaAs/Ge tri-that the invention provides a kind of and existing GaInP/GaAs/Ge formation complementation ties compound photovoltaic cell, these InAlAsP/InGaAs/Ge tri-junction structures form and mix three knot compound photovoltaic cells with existing GaInP/GaAs/Ge alternative arrangement, it can improve the conversion efficiency of photovoltaic cell effectively, these mixing three son knot compound photovoltaic cells also have second order bulge-structure light to confinement effect simultaneously, the bulge-structure of this second order can improve light contact area effectively, and can produce confinement effect efficiently to light,
Mixing three son knot compound photovoltaic cells of the present invention, comprise that traditional GaInP/GaAs/Ge tri-ties compound photovoltaic cell structure, it is characterized in that these mixing three son knot compound photovoltaic cells also comprise that InAlAsP/InGaAs/Ge tri-ties compound photovoltaic cell.And described mixing three son knot compound photovoltaic cell surfaces are continuous second order bulge-structure, described continuous second order bulge-structure comprises GaInP/GaAs/Ge tri-junction photovoltaic batteries and InAlAsP/InGaAs/Ge tri-junction photovoltaic batteries, and described GaInP/GaAs/Ge tri-junction photovoltaic batteries and described GaInP/GaAs/Ge tri-junction photovoltaic battery alternative arrangements; The second order bulge-structure of telling comprises the first rank projection and second-order projection, and wherein second-order projection raises up from the upper surface of the first rank projection;
Further, described GaInP/GaAs/Ge tri-junction photovoltaic batteries comprise Ge substrate; Ge battery, is positioned on Ge substrate; The sub-battery of InGaAs, is positioned on Ge battery; The sub-battery of InAlAsP, is positioned on the sub-battery of InGaAs; At the back surface field layer comprising between described Ge substrate and Ge battery on n++ Ge contact layer and n++ Ge contact layer; On the sub-battery of InAlAsP, being Window layer, is p++ contact layer in Window layer; The sub-battery of Ge battery and InGaAs, the sub-battery of InGaAs and the sub-battery of InAlAsP have the n++/p++ tunneling diode of Lattice Matching before;
Further, described Ge battery comprises successively n Ge base in the direction away from substrate, p+ Ge emitter region, and there is the band gap about 0.66ev; The sub-battery of described InGaAs comprises successively n InGaAs base on away from substrate direction, p+ InGaAs emitter region, and there is the band gap about 1.40ev; The sub-battery of the InAlAsP that tells of institute comprises successively n InAlAsP base on away from substrate direction, p+ InAlAsP emitter region, and there is the band gap about 1.90ev;
Further, be 300～400um from the end face of second-order projection to the bottom thickness of Ge substrate, the top of the first rank projection is 50 ~ 80um to the thickness of the first projection bottom surface, rank; And the top of second-order projection is at least greater than the top of the first rank projection to the twice of the thickness of the first projection bottom surface, rank to the thickness at the top of the first rank projection; Interval between every two second order bulge-structures is less than the top of the first rank projection to the thickness of the first projection bottom surface, rank;
Further, the thickness of described n Ge base is greater than the thickness of n InGaAs base, the thickness of n InGaAs base is greater than the thickness of n InAlAsP base, and the thickness of n Ge base is that approximately 2.5 microns, the thickness of n InGaAs base are that approximately 2.2 microns, the thickness of n InAlAsP base are about 1.8-2.0 micron; The thickness of p+ Ge emitter region, p+ InGaAs emitter region, p+ InAlAsP emitter region is 80-100 nanometer;
Further, the n++/p++ tunnel-through diode of described Lattice Matching is n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode; Its gross thickness is 30-45 nanometer.
Brief description of the drawings
Fig. 1 is according to the structural representation of mixing three son knot compound photovoltaic cells of the present invention;
Fig. 2 is the enlarged drawing of a-quadrant in Fig. 1, each son knot material layer schematic diagram of InAlAsP/InGaAs/Ge tri-junction photovoltaic batteries.
Embodiment
Below with reference to preferred forms, the present invention is described further, and beneficial effect of the present invention will become clear in describing in detail;
Referring to Fig. 1-2, Fig. 1 is the structural representation of the present invention's three sub-junction photovoltaic batteries, and Fig. 2 is the enlarged drawing of a-quadrant in Fig. 1, and it has shown the details of InAlAsP/InGaAs/Ge photovoltaic cell C2; Fig. 1-2 should be considered as schematic diagram, and its size relation is not with table actual conditions, and for example each layer of the battery C1 in Fig. 1 and C2 is that schematically its each layer of not representing C1 and C2 battery is identical.Referring to Fig. 1, compound photovoltaic cell of the present invention top plane of illumination is shaped as continuous second order bulge-structure (a, b), each second order bulge-structure (a, b) have the first rank projection (b) and second-order projection (a), wherein second-order projection (a) raises up from the upper surface of the first rank projection (b).This continuous second order bulge-structure comprises traditional GaInP/GaAs/Ge tri-junction photovoltaic battery C1 and can form with GaInP/GaAs/Ge tri-junction photovoltaic batteries the InAlAsP/IGaAs/Ge tri-junction photovoltaic battery C2 of complementation, GaInP/GaAs/Ge battery and GaInP/GaAs/Ge battery alternative arrangement; Because GaInP/GaAs/Ge battery structure is battery structure well known in the art, do not describing its concrete structure in detail at this;
As one aspect of the present invention, referring to Fig. 2, the InAlAsP/InGaAs/Ge structure of three son knots, wherein the band gap of the sub-battery of InAlAsP (300) is in 1.9ev left and right, the band gap of the sub-battery of InGaAs (200) is in 1.40ev left and right, the band gap of Ge battery (100) is 0.66ev left and right, optimizing structure of the band gap that three junction photovoltaic batteries of the present invention have can be mated the wavelength structure of nature solar spectrum, make full use of the photon energy of each wavelength period of photovoltaic, optimize on the whole the absorption to solar spectrum, improve battery efficiency;
Particularly, compound photovoltaic cell of the present invention comprises having continuous second order bulge-structure (a, b) Ge substrate (001), this Ge substrate can meet the Ge battery Lattice Matching with C1 battery and C2 battery simultaneously, wherein each second order bulge-structure (a, b) comprise the first rank projection (b) and second-order projection (a), wherein second-order projection (a) raises up from the upper surface of the first rank projection (b).Because GaInP/GaAs/GeC1 battery and InAlAsP/IGaAs/Ge tri-junction photovoltaic battery C2 are formed as identical second order bulge-structure, single taking InAlAsP/IGaAs/Ge tri-junction photovoltaic battery C2 as example, be positioned on Ge substrate (001) and be followed successively by Ge battery (100), the sub-battery of InGaAs (200), the sub-battery of InAlAsP (300) to form three junction batteries of 1.90ev/1.40ev/0.66ev band structure.Wherein the band gap of each sub-battery progressively increases in the direction away from substrate, this is extremely conducive to the raising of density of photocurrent, wherein Ge battery (100) has the band gap of 0.66ev left and right and in the direction away from substrate, is followed successively by n Ge base (101), p+ Ge emitter region (102), n Ge base (101) thickness is preferably 2.5 microns, and p+ Ge emitter region (102) thickness is preferably 80-100 nanometer; The sub-battery of InGaAs (200) has the band gap of 1.40ev left and right, and in the direction away from substrate, be followed successively by n InGaAs base (201), p+ InGaAs emitter region (202), the thickness of n InGaAs base (201) is preferably 2.2 microns, and the thickness of p+ InGaAs emitter region (202) is preferably 80-100 nanometer; The sub-battery of InAlAsP (300) has the band gap of 1.90ev left and right, and in the direction away from substrate, be followed successively by n InAlAsP base (301), p+ InAlAsp emitter region (302), the thickness of n InAlAsP base (301) is preferably 1.8-2.0 micron, and the thickness of p+ InAlAsp emitter region (302) is preferably 80-100 nanometer.Between Ge substrate (001) and n Ge base (101), also comprise n++ Ge contact layer (002) and back surface field layer (003); Upper at the sub-battery of InAlAsP (300) is Window layer (006), Window layer (006) is upper for p++ contact layer (007), in the present invention, is less than for the sub-battery that is optimized for the close plane of illumination that energy gap is large of each sub-battery base thickness the battery away from plane of illumination that energy gap is little; Particularly, the thickness that is exactly n InAlAsP base (301) is less than the thickness of n InGaAs base (201), the thickness of n InGaAs base (201) is less than the thickness of n Ge base (101), is conducive to like this maximum using to natural photovoltaic spectrum;
Between the each sub-battery layers of InAlAsP/InGaAs/Ge photovoltaic cell C2, there is the n++/p++ tunnel-through diode (004,005) of Lattice Matching, in this InAlAsP/InGaAs/Ge can be with the multi-junction photovoltaic battery of system, the n++/p++ tunnel-through diode of Lattice Matching need to be selected heterojunction structure, potential barrier between this knot that is conducive to provide high, the particularly tunnel-through diode (005) between the sub-battery of InAlAsP and InGaAs, in our experiment, observe this light is played to favourable effect by few son diffusion between the sub-battery of InAlAsP (300) on upper strata and minimizing knot, in experiment, we have used n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode, this has improved the photoelectric current efficiency of battery to the full extent, certainly as for epitaxially grown III-V family photovoltaic cells of tying more, the thickness of tunnel-through diode is very important and responsive, in the time selecting n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode as tunnel-through diode (005) between body series multi-junction photovoltaic battery InAlAsP and the sub-battery of InGaAs, the gross thickness of the n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode (005) of optimum experimental is 30-45 nanometer,
The second order bulge-structures (a, b) that mix three son knot compound photovoltaic cells are to be based upon on the Ge substrate of second order bulge-structure, and each sub-battery and other functional layers are covered on this Ge substrate successively.Be about 300-400um from the end face of second-order projection (b) to the bottom thickness d1 of Ge substrate, the top of the first rank projection (b) is preferably 50 ~ 80um to the bottom surface d2 of the first rank projection (b), and the height d2 of the first rank projection (b) is 50～80um; The top of second-order projection (a) is at least greater than the twice of the height d2 of the first rank projection (b) to the thickness d 3 between the top of the first rank projection (a), be preferably 150 ~ 200um, and the height d3 of second-order projection (a) is preferably 150 ~ 200um; Interval between every two second order bulge-structures is less than the height of the first rank projection (b); The width of each second order bulge-structure is preferably 150 ~ 200um.By the optimization of above-mentioned parameter, when incident ray is irradiated to photovoltaic cell surface at a certain angle, first absorbed a part on the surface of second-order bulge-structure by battery, a unabsorbed part that is irradiated to the second bulge-structure side reflexes to the surface of the first rank projection and is absorbed by the first rank projection, and can not reflexed on the battery surface between second order projection cube structure by a light part for the first rank projection cube structure Surface absorption.Thus and thus, make originally can only utilize the light that is irradiated to battery upper surface, tightly can not utilize by second order bulge-structure the light that is irradiated to upper surface, can also be by the reflection of the side light that is irradiated to side that utilizes more, this part light is exactly the additional light rays increasing, in a way, this structure has been carried out light the utilization of architecture, therefore can reach maximized utilization to solar incident ray.Even more noteworthy, the light reflecting from the battery surface between second order projection cube structure again can the surface of directive the first rank projection cube structure and/or the surface of second-order projection cube structure, so photovoltaic light is maximized ground confinement on the surface of photovoltaic cell with second order projection cube structure, and battery is greatly improved to the utilization of sunray; It is inseparable can realizing that above-mentioned limit neck effect chooses with above-mentioned parameter, if the interval that the height of second-order projection is less than between height or the second order bulge-structure of the first rank projection too mostly can not played confinement effect or can greatly slacken confinement effect sunray;
By the description of above-mentioned specific embodiment, disclose very all sidedly design of the present invention, those skilled in the art should understand advantage part of the present invention; Understanding for the application should not limit in the above-described embodiments, and the execution mode of the obvious distortion consistent with the present invention's spirit also should belong to design of the present invention.
Claims (7)
1. mix three son knot compound photovoltaic cells, comprise that traditional GaInP/GaAs/Ge tri-ties compound photovoltaic cell structure, it is characterized in that these mixing three son knot compound photovoltaic cells also comprise that InAlAsP/InGaAs/Ge tri-ties compound photovoltaic cell.
2. one kind is mixed three son knot compound photovoltaic cells, this battery surface is continuous second order bulge-structure, described continuous second order bulge-structure comprises GaInP/GaAs/Ge tri-junction photovoltaic batteries and InAlAsP/IGaAs/Ge tri-junction photovoltaic batteries, and described GaInP/GaAs/Ge tri-junction photovoltaic batteries and described GaInP/GaAs/Ge tri-junction photovoltaic battery alternative arrangements; The second order bulge-structure of telling comprises the first rank projection and second-order projection, and wherein second-order projection raises up from the upper surface of the first rank projection.
3. the photovoltaic cell as described in claim 1-2, described GaInP/GaAs/Ge tri-junction photovoltaic batteries comprise Ge substrate; Ge battery, is positioned on Ge substrate; The sub-battery of InGaAs, is positioned on Ge battery; The sub-battery of InAlAsP, is positioned on the sub-battery of InGaAs; At the back surface field layer comprising between described Ge substrate and Ge battery on n++ Ge contact layer and n++ Ge contact layer; On the sub-battery of InAlAsP, being Window layer, is p++ contact layer in Window layer; The sub-battery of Ge battery and InGaAs, the sub-battery of InGaAs and the sub-battery of InAlAsP have the n++/p++ tunneling diode of Lattice Matching before.
4. photovoltaic cell as claimed in claim 3, described Ge battery comprises successively n Ge base in the direction away from substrate, p+ Ge emitter region, and there is the band gap about 0.66ev; The sub-battery of described InGaAs comprises successively n InGaAs base on away from substrate direction, p+ InGaAs emitter region, and there is the band gap about 1.40ev; The sub-battery of the InAlAsP that tells of institute comprises successively n InAlAsP base on away from substrate direction, p+ InAlAsP emitter region, and there is the band gap about 1.90ev.
5. the photovoltaic cell as described in claim 2-4, is 300～400um from the end face of second-order projection to the bottom thickness of Ge substrate, and the top of the first rank projection is 50 ~ 80um to the thickness of the first projection bottom surface, rank; And the top of second-order projection is at least greater than the top of the first rank projection to the twice of the thickness of the first projection bottom surface, rank to the thickness at the top of the first rank projection; Interval between every two second order bulge-structures is less than the top of the first rank projection to the thickness of the first projection bottom surface, rank.
6. the photovoltaic cell as described in claim 4-5, the thickness of described n Ge base is greater than the thickness of n InGaAs base, the thickness of n InGaAs base is greater than the thickness of n InAlAsP base, and the thickness of n Ge base is that approximately 2.5 microns, the thickness of n InGaAs base are that approximately 2.2 microns, the thickness of n InAlAsP base are about 1.8-2.0 micron; The thickness of p+ Ge emitter region, p+ InGaAs emitter region, p+ InAlAsP emitter region is 80-100 nanometer.
7. photovoltaic cell as claimed in claim 3, the n++/p++ tunnel-through diode of described Lattice Matching is n++ InGaP/p++ InGaAsP heterojunction tunnel-through diode; Its gross thickness is 30-45 nanometer.
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| CN110943139A (en) * | 2019-12-16 | 2020-03-31 | 扬州乾照光电有限公司 | Solar cell and manufacturing method thereof |
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Application publication date: 20141210 |