CN104201209A - Si/NiO: Ag heterogeneous p-n junction diode - Google Patents
Si/NiO: Ag heterogeneous p-n junction diode Download PDFInfo
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- CN104201209A CN104201209A CN201410257437.3A CN201410257437A CN104201209A CN 104201209 A CN104201209 A CN 104201209A CN 201410257437 A CN201410257437 A CN 201410257437A CN 104201209 A CN104201209 A CN 104201209A
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- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a Si/NiO: Ag heterogeneous p-n junction diode. The Si/NiO: Ag heterogeneous p-n junction diode at least comprises a p-n junction and an ohm contact electrode, wherein the p-n junction is a heterogeneous p-n junction formed by a p type NiO: Ag film generating on an n type Si substrate. According to the Si/NiO: Ag heterogeneous p-n junction diode, the p type NiO: Ag film is prepared on the n type Si substrate by the magnetron sputtering process, and then an electrode is manufactured on the p-n junction by the magnetron sputtering method or the thermal evaporation method; the heterogeneous p-n junction diode has relatively high reverse breakdown pressure and large positive current density; in addition, the preparation method is simple in process and small in cost.
Description
Technical field
The present invention relates to a kind of Si/NiO:Ag diode of heterogenous pn junction.Belong to functional material and field of optoelectronic devices.
Background technology
The internal degree of freedom of d (f) electronics containing in strong associated material NiO is as the interaction between spin, electric charge, track, make NiO show much unusual character, also make the physical property of material along with inner parameter, as the variation of temperature, pressure, doping, remarkable change occurs simultaneously.By the end of at present, NiO is applied to the research in the fields such as catalyst, battery electrode, electrochemical capacitor because of its good catalytic performance, thermo-sensitive property, to the rare report of the research of its photoelectric characteristic.Heterojunction semiconductor is easy to realize development and the exploitation that photogenerated charge separation is widely used in the opto-electronic devices such as hull cell.NiO is except above-mentioned character, or the direct broad-band gap semitransparent semiconductor material of p-type, compares with indirect gap semiconductor material, and quantum efficiency is relatively high.Under room temperature, energy gap is 3.0-4.0eV, and the d-d track transition of 3d electronic structure makes it in visible region, have weak absorption.We are by NiO base heterojunction form research photoelectron device.The people such as P.Puspharajha adopt spray pyrolysis to make NiO film reach 90% at visible light wave range light transmittance by NiO being mixed to Li+, film resistor drops to 1 Ω cm and (sees document P PUSPHARAJAH, S RADHAKRISHNA, A K AROF. Transparent conducting lithium-doped nickel oxide thin films by spray pyrolysis technique. Journal of Materials Science, 1997,32 (11): 3001-3006).But take a long view, Ag metal is more common.We introduce NiO by Ag element, preparation NiO:Ag base heterojunction, and this meets the green energy resource aim that modern society acts on very much, and at this, we select cheap N-shaped Si substrate as the other end of heterojunction, thereby realize Si/NiO:Ag diode of heterogenous pn junction.This selection is for the exploitation important in inhibiting of new device, and for Si/NiO:Ag heterojunction, have not been reported at present.
Summary of the invention
For improving the performance of traditional plane pn junction diode, the invention provides a kind of Si/NiO:Ag diode of heterogenous pn junction, the Si/NiO:Ag diode of heterogenous pn junction of preparation has higher reverse breakdown voltage and large forward current density.With respect to traditional plane pn junction diode, the rectification characteristic of this Novel diode is improved.
Technical scheme of the present invention: Si/NiO:Ag diode of heterogenous pn junction, at least comprise pn knot and Ohm contact electrode, described pn knot is to form heterogenous pn junction by p-type NiO:Ag and N-shaped Si.
The preparation method of above-mentioned Si/NiO:Ag diode of heterogenous pn junction: prepare NiO:Ag film with magnetron sputtering technique and form heterogenous pn junction on Si substrate; Finally adopt sputter or thermal evaporation to tie making electrode at pn; Wherein, NiO:Ag and Si surface sputtering or evaporation silver or nickel or aluminium or gold electrode.
It is the NiO:Ag2O ceramic target of 50mm that the present invention adopts diameter, NiO:Ag film prepared by magnetron sputtering.Cavity base vacuum degree before sputter is better than 3x10-4Pa, at the relative partial pressure of oxygen O2/ of this employing (O2+Ar)=0%-100%.Sputtering pressure is 0.5-2Pa, sputtering power 100-200W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 20-120min, and underlayer temperature is that the time is 0.5 to 1 hour from 200 ℃ to 700 ℃ for RT-600 ℃ or post annealed temperature.
The present invention utilizes p-type NiO:Ag film and N-shaped Si film to form diode of heterogenous pn junction.By to optimization of the control of the conditions such as NiO:Ag film, pn junction structure etc., improved heterogenous pn junction performance, give full play to semiconductor N iO:Ag in the original advantage of heterogenous pn junction application aspect.
Accompanying drawing explanation
Fig. 1 is structure chart of the present invention
Fig. 2 is the Si/NiO:Ag diode of heterogenous pn junction XRD diffraction pattern (embodiment mono-) of 400 ℃ of depositions of underlayer temperature of the present invention
Fig. 3 is the I-V curve (embodiment mono-) that the present invention reflects heterojunction rectification characteristic
Fig. 4 is the I-V curve (embodiment bis-) that the present invention reflects heterojunction rectification characteristic
Fig. 5 is the I-V curve (embodiment tri-) that the present invention reflects heterojunction rectification characteristic.
Embodiment
Si/NiO:Ag diode of heterogenous pn junction of the present invention, at least comprises pn knot and Ohm contact electrode, and described pn knot is directly on N-shaped Si substrate, to deposit NiO:Ag to form heterogenous pn junction.As shown in Figure 1, its concrete preparation process is as follows for structure chart:
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen;
(2) preparation of p-NiO:Ag: the cavity base vacuum degree before sputter is better than 3x10-4Pa, relative partial pressure of oxygen O2/ (the O2+Ar)=0%-100% of employing, sputtering pressure is 0.5-2Pa, sputtering power 100-200W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 20-120min, and underlayer temperature is that RT-600 ℃ and temperature are 200 ℃ to 700 ℃ annealing 0.5 to 1 hour.
(3) preparation of electrode: adopt the methods such as sputter or thermal evaporation (as: Tang Weizhong work, thin-film material preparation principle, application, metallurgical industry publishing house 1998 front pages) to make silver/nickel/aluminium/gold electrode at NiO:Ag and Si surface.
(4) ohmic contact characteristic of Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction for test.
embodiment mono-
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen;
(2) preparation of p-NiO:Ag: adopt the NiO:Ag that diameter is 50mm
2o ceramic target.NiO:Ag film prepared by magnetron sputtering.Cavity base vacuum degree before sputter is better than 3x10-4Pa, employing be straight argon sputter.Sputtering pressure is 2Pa, sputtering power 150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is 400 ℃.The XRD diffraction pattern of this sample is shown in Fig. 2, and the diffraction maximum that visible NiO:Ag diffraction maximum and Ag electrode and Si sink to the bottom does not have the assorted peak of other diffraction to occur;
(3) preparation of electrode: adopt magnetically controlled sputter method to make Ag electrode at NiO:Ag and Si marginal surface;
(4) ohmic contact characteristic of Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction for test, be shown in Fig. 3.
embodiment bis-
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen;
(2) preparation of p-NiO:Ag: adopt the NiO:Ag that diameter is 50mm
2o ceramic target.NiO:Ag film prepared by magnetron sputtering.Cavity base vacuum degree before sputter is better than 3x10-4Pa, employing be straight argon sputter.Sputtering pressure is 2Pa, sputtering power 150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is 200 ℃;
(3) preparation of electrode: adopt magnetically controlled sputter method to make Ag electrode at NiO:Ag and Si marginal surface;
(4) ohmic contact characteristic of Keithley 2612A detecting electrode and the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction for test, be shown in Fig. 4.
embodiment tri-
(1) adopt the cleaning method cleaning silicon chip in semiconductor technology and dry up with nitrogen;
(2) preparation of p-NiO:Ag: adopt the NiO:Ag that diameter is 50mm
2o ceramic target.NiO:Ag film prepared by magnetron sputtering.Cavity base vacuum degree before sputter is better than 3x10-4Pa, employing be straight argon sputter.Sputtering pressure is 2Pa, sputtering power 150W.Before plated film, pre-sputtering 5min is to remove the impurity of target material surface.The plated film time is 40min, and underlayer temperature is room temperature;
(3) preparation of electrode: adopt magnetically controlled sputter method to make Ag electrode at NiO:Ag and Si marginal surface;
(4) test is ohmic contact characteristic with the contact of Keithley 2612A detecting electrode.And the I-V characteristic (rectification characteristic) of diode of heterogenous pn junction, is shown in Fig. 5.
Claims (8)
1. a Si/NiO:Ag diode of heterogenous pn junction, at least comprises pn knot and Ohm contact electrode, it is characterized in that: described pn knot is the heterogenous pn junction being obtained by N-shaped Si Grown NiO:Ag film.
2. the preparation method of Si/NiO:Ag diode of heterogenous pn junction described in claim 1, is characterized in that: with magnetron sputtering technique, on N-shaped Si substrate, prepare NiO:Ag film and form heterogenous pn junction.
3. preparation method according to claim 2, is characterized in that: the present invention adopts NiO:Ag
2o ceramic target, magnetron sputtering technique is prepared NiO:Ag film, at this, adopts partial pressure of oxygen O
2/ (O
2+ Ar)=0%-100%.
4. the cavity base vacuum degree before sputter is better than 3x10
-4pa, sputtering pressure is 0.5-2Pa, sputtering power is 100-200W.
5. before plated film, pre-sputtering 5min is to remove the impurity of target material surface.
6. the plated film time is 20-120min, and underlayer temperature is changed to 600 from RT
oc.
7. the preparation method of Si/NiO:Ag diode of heterogenous pn junction described in claim 1,2 or 3, is characterized in that: by this heterojunction from 200
oc to 700
oc annealing 0.5 to 1 hour.
8. the preparation method of n-Si/p-NiO:Ag diode of heterogenous pn junction described in claim 1 or 2 or 3, is characterized in that: adopt sputtering method or thermal evaporation to tie making electrode at pn; Wherein, NiO:Ag and Si surface deposition nickel, silver, aluminium or gold electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410257437.3A CN104201209A (en) | 2014-06-11 | 2014-06-11 | Si/NiO: Ag heterogeneous p-n junction diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410257437.3A CN104201209A (en) | 2014-06-11 | 2014-06-11 | Si/NiO: Ag heterogeneous p-n junction diode |
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|---|---|
| CN104201209A true CN104201209A (en) | 2014-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410257437.3A Pending CN104201209A (en) | 2014-06-11 | 2014-06-11 | Si/NiO: Ag heterogeneous p-n junction diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322026A (en) * | 2015-09-30 | 2016-02-10 | 天津职业技术师范大学 | NiO:Ag/TiOx heterogeneous pn junction diode |
| CN114054042A (en) * | 2021-11-11 | 2022-02-18 | 重庆邮电大学 | Preparation method of Ag-doped nickel oxide nano-microsphere with mesopores and product thereof |
-
2014
- 2014-06-11 CN CN201410257437.3A patent/CN104201209A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| CHEN S.C. ET AL.: "《Electrical and optical properties of NiO composite films by radiofrequency magnetron sputtering》", 《J NANOSCI NANOTECHNOL.》 * |
| 李彤等: "《Si/NiO异质PN结的光电性能研究》", 《光电子.激光》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322026A (en) * | 2015-09-30 | 2016-02-10 | 天津职业技术师范大学 | NiO:Ag/TiOx heterogeneous pn junction diode |
| CN114054042A (en) * | 2021-11-11 | 2022-02-18 | 重庆邮电大学 | Preparation method of Ag-doped nickel oxide nano-microsphere with mesopores and product thereof |
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Application publication date: 20141210 |