CN104198060B - High temperature-resistant wireless MEMS temperature sensing system - Google Patents
High temperature-resistant wireless MEMS temperature sensing system Download PDFInfo
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- CN104198060B CN104198060B CN201410426020.5A CN201410426020A CN104198060B CN 104198060 B CN104198060 B CN 104198060B CN 201410426020 A CN201410426020 A CN 201410426020A CN 104198060 B CN104198060 B CN 104198060B
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- 238000009529 body temperature measurement Methods 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 claims abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 28
- 239000012528 membrane Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- 230000002463 transducing effect Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000006855 networking Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229910003450 rhodium oxide Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910021489 α-quartz Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- 241001274660 Modulus Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 241000216843 Ursus arctos horribilis Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000003129 oil well Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Arrangements For Transmission Of Measured Signals (AREA)
Abstract
The invention provides a high temperature-resistant wireless MEMS temperature sensing system. The high temperature-resistant wireless MEMS temperature sensing system comprises a wireless inquiry unit for sending/receiving an electromagnetic wave signal, measuring, storing and processing the temperature data and taking the temperature data as a final sensing signal, an acoustic surface wave resonance device for receiving the electromagnetic wave signal from the wireless inquiry unit, converting the electromagnetic wave signal into acoustic surface wave and then converting the acoustic surface wave into a new electromagnetic wave signal, and feeding back the new electromagnetic wave signal to the wireless inquiry unit, and a display device for receiving and displaying a temperature measurement result from the wireless inquiry unit. The high temperature-resistant wireless MEMS temperature sensing system is passive, wireless, resistant to high temperatures, small in volume, and capable of realizing real-time measurement.
Description
Technical field
The present invention relates to field of sensing technologies, more particularly, to a kind of high temperature resistant wireless mems temperature-sensing system.
Background technology
Realize to gas turbine, jet engine, tank and marine engine, wind-tunnel, spacecraft, nuclear reactor, oil well
Deng the real-time monitoring of temperature under high-temperature severe environment, it is the important ring improving efficiency and fault diagnosis.High temperature resistant sensor-based system
Research is not only significant and demand urgent, be one of emphasis direction and difficult point content of observation and control technology development.High temperature resistant biography
Sensing system relates generally to three below aspect problem: 1) exotic material；2) can the forming processing technology of material (with mems work
Skill is compatible)；3) sensor construction based on new principle designs.
Current high-temperature measurement technology the most ripe is Thermocouples Technology, but it has an inherent defect: one be thermocouple be to have
Line measures, and output signal is weak and easily by common mold noise interference；Two to be that thermocouple long-term work has in high temperature environments very big
Drift, temperature measurement accuracy is low；Three is that thermocouple is sensitive to caustic, short life.
Currently used sensor-based system is mainly fiber form, but needs single and fiber head are particularly sealed
Dress protection, under high temperature, the thermal coefficient of expansion of encapsulation and fibrous material mismatches and is easily caused sensor failure.Further, since being related to
Light path design and signal processing complexity, cause system entirety complexity height, and integration is poor.So far, Fibre Optical Sensor
System is all wired measuring it is impossible to realize measuring in real time for a long time of temperature under hot environment.Wired measuring is in the severe ring such as high temperature
Adaptability under border has certain limitation, is faced with serious high temperature failure problem in high temperature environments.And active sensor also has
Two big inherent defects: one is due to relying on power supply, active sensor must periodic maintenance, replacing electricity during long-term use
Pond, leads to that its service life is limited, volume is larger；Two is because the batteries such as solid lithium battery are limited by electrochemical process,
Serious hydraulic performance decline occurs under high temperature, and built-in signal process circuit is generally silicon substrate, silicon-based electronic circuits are non-refrigerated
In the case of maximum operating temperature be 150 DEG C, so that active sensor is difficult to adapt to the adverse circumstances such as high temperature.
Content of the invention
It is contemplated that at least solving one of technical problem in correlation technique to a certain extent.
For this reason, it is an object of the invention to proposing a kind of passive, wireless, high temperature resistant, small volume, can measuring in real time
Mems temperature-sensing system.
To achieve these goals, a kind of high temperature resistant wireless mems temperature-sensing system is proposed in embodiments of the invention,
Including wireless interrogation unit, for sending/receiving electromagnetic wave signal, measurement, storage and treatment temperature data, and by described temperature
Degrees of data is as final transducing signal；Surface acoustic wave resonance device, described surface acoustic wave resonance device is used for receiving from described
The described electromagnetic wave signal of wireless interrogation unit, and described electromagnetic wave signal is converted to after surface acoustic wave, again by described sound
Surface wave is converted to new electromagnetic wave signal, and described new electromagnetic wave signal is fed back to described wireless interrogation unit；Aobvious
Showing device, for receiving and showing the temperature measurement result from described wireless interrogation unit.
High temperature resistant wireless mems temperature-sensing system according to embodiments of the present invention, surface acoustic wave resonance device is arranged on height
Temperature area, wireless interrogation unit and display device are arranged on low-temperature region.Electromagnetic wave signal is sent to sound by wireless interrogation unit
Surface wave resonance device, by the inverse piezoelectric effect of the interdigital transducer of surface acoustic wave resonance device in piezoelectric membrane surface activation
One surface acoustic wave.Surface acoustic wave is propagated along piezoelectric membrane, is reflected to form resonance by left and right two periodic reflective grid, its resonance
Frequency is relevant with piezoelectric membrane temperature.Then the interdigital transducer of surface acoustic wave resonance device passes through piezoelectric effect again by sound surface
After the electromagnetic wave signal of wave conversion Cheng Xin is sent to wireless interrogation unit, wireless interrogation unit passes through to process final process result
Sent by way of being wirelessly transferred and show to display device.The high temperature resistant wireless mems temperature-sensing system of the present invention has resistance to
High temperature, passive, the wireless, advantage that can measure in real time.
In some instances, described surface acoustic wave resonance device specifically includes: substrate, described substrate is by exotic material system
Become；Two reflecting gratings, described reflecting grating is arranged on the upper surface of described substrate and described two reflecting grating separates；Interdigital transducing
Device, described interdigital transducer is arranged on the upper surface of described substrate and is located between described two reflecting gratings；Small size antenna, institute
State small size antenna to be arranged on the upper surface of described substrate, described small size antenna is connected with described interdigital transducer, for receiving
With transmission electromagnetic wave signal；And piezoelectric membrane, described piezoelectric membrane is arranged on the upper surface of described high temperature resistant substrate, its
In, described two reflecting gratings, described interdigital transducer and described small size antenna are located between described substrate and described piezoelectric membrane.
In some instances, described exotic material is carborundum.
In some instances, described piezoelectric membrane is aluminum nitride piezoelectric film.
In some instances, described interdigital transducer is metal interdigital transducers.
In some instances, described reflecting grating is metallic reflection grid.
In some instances, by the resonant frequency of described surface acoustic wave resonance device, interdigital of described interdigital transducer
Away from determining the electrode of described interdigital transducer and the width of described reflecting grating with the spread speed of described surface acoustic wave.
In some instances, described wireless interrogation unit includes: core processor；Direct Digital Frequency Synthesizers, described
Direct Digital Frequency Synthesizers are connected with described core processor；Emitter, described emitter is closed with described Direct Digital frequency
Grow up to be a useful person connected；Duplexer, described duplexer is connected with described emitter；Receptor, described receptor is connected with described duplexer；
Detector, described detector is connected with described receptor and described core processor respectively；Antenna, is used for sending and receiving electromagnetism
Ripple signal.
In some instances, described core processor is zigbee single-chip microcomputer.
In some instances, described wireless interrogation unit passes through described antenna to described surface acoustic wave resonance device transmission electricity
Magnetostatic wave signal or reception are derived from the electromagnetic wave signal that described surface acoustic wave resonance device sends, and send institute to described display device
State temperature measurement result.The aspect that the present invention adds and advantage will be set forth in part in the description, partly by from following
Become obvious in description, or recognized by the practice of the present invention.
Brief description
Fig. 1 is the structured flowchart of high temperature resistant wireless mems temperature-sensing system according to an embodiment of the invention；
Fig. 2 is the structured flowchart of the surface acoustic wave resonance device of one embodiment of the invention；
Fig. 3 is the floor map of the surface acoustic wave resonance device of one embodiment of the invention；
Fig. 4 is the generalized section of the surface acoustic wave resonance device of one embodiment of the invention；With
Fig. 5 is the schematic diagram of the high temperature resistant wireless mems temperature-sensing system of one embodiment of the invention.
Specific embodiment
Embodiments of the invention are described below in detail, the example of described embodiment is shown in the drawings, wherein from start to finish
The element that same or similar label represents same or similar element or has same or like function.Below with reference to attached
The embodiment of figure description is exemplary it is intended to be used for explaining the present invention, and is not considered as limiting the invention.
Embodiments of the invention propose a kind of high temperature resistant wireless mems temperature-sensing system, as shown in Figure 1, comprising: wireless
Inquiry unit 100, surface acoustic wave resonance device 200 and display device 300.
Wherein, wireless interrogation unit 100 is used for sending/receiving electromagnetic wave signal, measures, stores and treatment temperature data,
And using temperature data as final transducing signal.Surface acoustic wave resonance device 200 is used for receiving from wireless interrogation unit 100
Electromagnetic wave signal, and electromagnetic wave signal is converted to after surface acoustic wave, again surface acoustic wave is converted to new electromagnetic wave signal,
And new electromagnetic wave signal is fed back to wireless interrogation unit 100.Display device 300 is used for receiving and show from wirelessly asking
Ask the temperature measurement result of unit 100.
Specifically, in one embodiment of the invention, wireless interrogation unit 100 specifically includes: core processor 11, straight
Connect digital frequency synthesizer (direct digital synthesizer, dds) 12, emitter 13, duplexer 14, receptor
15th, detector 16, antenna 17.Wherein, dds12 is connected with core processor 11.Emitter 13 is connected with dds12.Duplexer 14
It is connected with emitter 13.Receptor 15 is connected with duplexer 14.Detector 16 respectively with receptor 15 and core processor 11 phase
Even.Antenna 17 is used for sending and receiving electromagnetic wave signal.
Specifically, in one embodiment of the invention, core processor 11 adopt zigbee single-chip microcomputer as core at
Reason device, is responsible for synchronous all measuring processs, storage and treatment temperature data, and is carried out wirelessly with the zigbee single-chip microcomputer of display end
Communication.Dds 12 is controlled by zigbee mcu programming according to ism (international safety management) rule
Produce the radiofrequency signal of 434mhz through mixing, filtering.Duplexer 14 between emitter 13 and receptor 15 is responsible for transmitting and is connect
The State Transferring received.When being in emission state, emission of radio frequency signals inquiry surface acoustic wave resonance device.When being in reception state,
Receptor 15 carries out receiving to echo-signal, filters, amplifies, then transfers to zigbee single-chip microcomputer after radio-frequency probe 16 digitized
Carry out signal processing.Final signal result is gone out by zigbee single-chip microcomputer wireless transmit.
In one embodiment of the invention, surface acoustic wave resonance device 200, as shown in Fig. 2 specifically including: substrate 21,
22, two reflecting gratings 23 of interdigital transducer, small size antenna 24 and piezoelectric membrane 25.
Wherein, substrate 21 is made up of exotic material.Two reflecting gratings 23 are arranged on the upper surface of substrate 21 and two
Reflecting grating 23 is spaced apart.Interdigital transducer (interdigital transducer, idt) 22 is arranged on the upper surface of substrate 21
Above and between two reflecting gratings 23.Small size antenna 24 is arranged on the upper surface of substrate 21, and small size antenna 24 is changed with interdigital
Can device 22 be connected, for receiving and sending electromagnetic wave signal.Piezoelectric membrane 25 is arranged on the upper surface of described high temperature resistant substrate,
Wherein, 22, two reflecting gratings 23 of interdigital transducer and small size antenna 24 are located between substrate 21 and piezoelectric membrane 25, such as Fig. 3 and 4
Shown.
Specifically, in one embodiment of the invention, the exotic material making substrate 21 employing is carborundum
(sic).Sic is a kind of good mechanical performance, chemistry and stable electrical properties, the semi-conducting material of broad-band gap, and high temperature application is latent
Power is huge, and its characteristic is as shown in table 1.
Table 1 different crystal forms sic and other semiconductor material characteristics
| Performance (unit) | 3c-sic | 4h-sic | 6h-sic | aln | Diamond | si |
| Fusing point (DEG C) | 2830 distillations | 2830 | 2830 distillations | 2470 | 4000 phase transformations | 1420 |
| Energy gap (ev) | 2.4 | 3.23 | 3.0 | 6.2 | 5.6 | 1.1 |
| Disruptive field intensity (× 106v/cm) | 2.0 | 2.0～2.5 | 2.5 | 10 | 5.0 | 0.25 |
| Thermal conductivity (w/cm*k) | 5.0 | 3.7 | 5.0 | 1.6 | 20 | 1.5 |
| Young's moduluss (gpa) | 450 | 448 | 450 | 340 | 1035 | 190 |
| Transaudient speed (× 103m/s) | 11.9 | 11.9 | 11.9 | 11.4 | 17.2 | 9.1 |
| Yield strength (gpa) | 21 | 21 | 21 | -- | 53 | 7 |
| Thermal coefficient of expansion (DEG C × 10-6) | 3.0 | 4.2 | 4.5 | 4.0 | 0.8 | 2.6 |
| Chemical stability | Fabulous | Fabulous | Fabulous | Good | Typically | Typically |
Specifically, in one embodiment of the invention, piezoelectric membrane 25 is aluminium nitride (aln) piezoelectric membrane.At present may be used
High temperature resistant piezoelectric has LGS (lgs), phosphoric acid gallium (gapo4), aluminium nitride (aln) etc., as shown in table 2.With silicon
Sour gallium lanthanum (lgs), phosphoric acid gallium (gapo4), the piezoelectric such as RE borate pass through crystal growth method different, aln thin film
Can be deposited on non-depressed electric substrate, can be sunk using metallo-organic compound chemical gaseous phase deposition (mocvd), pulse laser
The methods such as shallow lake, magnetron sputtering grow aln thin film, and its characteristic index is as shown in table 3.
The resistant to elevated temperatures piezoelectric of table 2
| Piezoelectric | Limited temperature (DEG C) | Limited reason |
| Lithium tetraborate (lib4o7) | 230 | Excessive ionic conductivity |
| Lithium metaniobate (linbo3) | 300 | Decompose |
| Lithium tantalate (litao3) | 300 | Decompose |
| Alpha-quartz (α-quartz) | 573 | Phase transformation |
| Alborex M 12 (alpo4) | 588 | Phase transformation |
| Phosphoric acid gallium (gapo4) | 970 | Phase transformation |
| Aluminium nitride (aln) | ～1000 | Non-oxidizability |
| LGS (langasite) | 1470 | Fusing point |
| RE borate (oxyborates) | ～1500 | Fusing point |
Table 3aln film characteristics index
| Characteristic index | Parameter |
| Energy gap | 6.2ev |
| Resistivity | 1032ω·cm |
| Heat conductivity | 320w·mk-1 |
In practical operation, the growth substrate of aln piezoelectric membrane can adopt si, sic, gan, zno, mgo, sapphire etc..
The lattice mismatch of sic and aln only has 3.5%, is the optimal material of aln heteroepitaxial growth.Therefore, at one of the present invention
In embodiment, first pass through and develop a film, be deposited with layer of metal material in sic substrate surface, then produce through photoetching, corrosion technology
Idt, small size antenna and reflection grizzly bar.Finally one layer of aluminium nitride film is grown in sic substrate using magnetron sputtering technique, adopt
Mems fabrication techniques aln thin film/sic double-decker.This structure is simple, need not encapsulate.And, by interdigital transducer and reflecting grating
All made using metal material, and be clipped between aln thin film and sic substrate, provide the adverse circumstances such as one layer of opposing high temperature for idt
Natural containment.
In one embodiment of the invention, when surface acoustic wave resonance device designs, by resonant frequency f0, idt interdigital
Relational expression between spacing l and acoustic surface wave propagation speed vDetermine idt electrode and reflection grid width, design idt electricity
Pole width is equal with spacing.Especially, idt electrode is metal electrode.Small size antenna adopts dipole antenna or other small-sized skies
Line.This micro metal electrode and antenna, using platinum -10% rhodium/zirconium dioxide (pt-10%rh/zro2) metal material, can tolerate
800 DEG C of high temperature above.
In addition, under high temperature, the metal material making idt22, reflecting grating 23 and small size antenna 24 need to meet high-melting-point, high resistance to
Oxidisability and high chemical inertness.Such material mainly has platinum (pt), rhodium (rh), palladium (pd), ruthenium (ru), iridium (ir) and high temperature resistant conjunction
Gold etc., each material behavior contrast is as shown in table 4, material selection platinum -10% rhodium/titanium dioxide of idt22, reflecting grating 23 and antenna 24
Zirconium (pt-10%rh/zro2).
The metal material (～100nm) of application under table 4 high temperature
In one embodiment of the invention, idt22 and small size antenna 24 adopt integrated design, wireless interrogation unit
100 electromagnetic wave signals sending are received by idt22 by small size antenna 24, excite SAW on aln piezoelectric membrane
(saw) propagate to both sides, and composition acoustic resonator is reflected by reflecting grating 23.Temperature change causes the change of resonator resonant frequency
Change, the saw being reflected back is re-converted into electromagnetic wave signal by idt, passes wireless interrogation unit 100 back by small size antenna 24.
When wireless interrogation unit 100 receives the new echo-signal (mode of resonance that surface acoustic wave resonance device 200 sends back
The electromagnetic wave signal of saw sensor resonant frequency change), process after calculating resonant frequency, be converted into final temperature test knot
Fruit is wirelessly transmitted to display device 300.
In one embodiment of the invention, display device 300 includes display.The zigbee of wireless interrogation unit 100
Single-chip microcomputer is communicated wirelessly with the zigbee single-chip microcomputer of display device 300.Can touch in practice at present is wirelessly transferred
Technology has: infrared ray irda (infrared data association) technology, bluetooth, wireless digital broadcasting station, wifi, gprs,
3g, uwb and zigbee etc..Wherein, wifi, bluetooth (bluetooth) and wsn/zigbee are current 3 kinds of common short distances
From wireless communication technology.
Due to do not need to radio control department application can be with the ism using 9.2mhz, 2.4ghz and 5.8ghz
(industrial scientific medical) frequency range, so the carrier frequency of many number systems adopts ism frequency range, leads at present
Stream for 2.4ghz frequency range, the main Radio Transmission Technology contrast of this frequency range as shown in table 5:
As shown in Table 5: zigbee is set up in commercial Application closely has congenital sexual clorminance in terms of controlling network.In work
In the transmission technology of 2.4g frequency range, compared with bluetooth and wifi, zigbee possesses the network not possessed both other to zigbee
Autgmentability, number of network node is also far longer than 8 nodes of bluetooth and 50 nodes of wifi, reaches more than 65000 node.Again
Simple plus installing and using, use cost is low, the feature such as networking required time is short, uses in industrial field control application
It is very competitive that zigbee implements networking.
Carry out receiving wireless signal by zigbee single-chip microcomputer at display device 300 end, and usb data wire is turned by rs232
Signal is reached display shown.
Table 5 wireless signal transmission techniques
In specific example, as shown in figure 5, the work process of the high temperature resistant wireless mems temperature-sensing system of the present invention
For: with zigbee single-chip microcomputer as core processor, the electromagnetic wave signal sending is connect by idt wireless interrogation unit by small size antenna
Receive, saw is inspired on aln piezoelectric membrane and propagates to both sides, and composition acoustic resonator is reflected by reflecting grating.Temperature change is made
Become the change of resonator resonant frequency, the saw being reflected back is re-converted into electromagnetic wave signal by idt, is passed back wirelessly by antenna
Inquiry unit, after signal processing calculates resonant frequency, is converted into final temperature test result and is wirelessly transmitted to display.
High temperature resistant wireless mems temperature-sensing system according to embodiments of the present invention, surface acoustic wave resonance device is arranged on height
Temperature area, wireless interrogation unit and display device are arranged on low-temperature region.Electromagnetic wave signal is sent to sound by wireless interrogation unit
Surface wave resonance device, by the inverse piezoelectric effect of the interdigital transducer of surface acoustic wave resonance device in piezoelectric membrane surface activation
One surface acoustic wave.Surface acoustic wave is propagated along piezoelectric membrane, is reflected to form resonance by left and right two periodic reflective grid, its resonance
Frequency is relevant with piezoelectric membrane temperature.Then the interdigital transducer of surface acoustic wave resonance device passes through piezoelectric effect again by sound surface
After the electromagnetic wave signal of wave conversion Cheng Xin is sent to wireless interrogation unit, wireless interrogation unit passes through to process final process result
Sent by way of being wirelessly transferred and show to display device.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy describing with reference to this embodiment or example
Point is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.And, the specific features of description, structure, material or feature can be in office
Combine in an appropriate manner in one or more embodiments or example.Additionally, in the case of not conflicting, the skill of this area
The feature of the different embodiments described in this specification or example and different embodiment or example can be tied by art personnel
Close and combine.
Although embodiments of the invention have been shown and described above it is to be understood that above-described embodiment is example
Property it is impossible to be interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (9)
1. a kind of high temperature resistant wireless mems temperature-sensing system is it is characterised in that include:
Wireless interrogation unit, for sending/receiving electromagnetic wave signal, measurement, storage and treatment temperature data, and by described temperature
As final transducing signal, wherein, described wireless interrogation unit includes data: core processor and described core processor phase
Direct Digital Frequency Synthesizers even, the emitter being connected with described Direct Digital Frequency Synthesizers, it is connected with described emitter
Duplexer, the receptor being connected with described duplexer, the detection being connected with described receptor and described core processor respectively
Device, the antenna for sending and receiving electromagnetic wave signal；
Surface acoustic wave resonance device, described surface acoustic wave resonance device is used for receiving the described electricity from described wireless interrogation unit
Magnetostatic wave signal, and described electromagnetic wave signal is converted to after surface acoustic wave, again described surface acoustic wave is converted to new electromagnetism
Ripple signal, and described new electromagnetic wave signal is fed back to described wireless interrogation unit；
Display device, for receiving and showing the temperature measurement result from described wireless interrogation unit.
2. the system as claimed in claim 1 is it is characterised in that described surface acoustic wave resonance device specifically includes:
Substrate, described substrate is made up of exotic material；
Two reflecting gratings, described reflecting grating is arranged on the upper surface of described substrate and described two reflecting grating separates；
Interdigital transducer, described interdigital transducer be arranged on the upper surface of described substrate and be located at described two reflecting gratings it
Between；
Small size antenna, described small size antenna is arranged on the upper surface of described substrate, described small size antenna and described interdigital transducing
Device is connected, for receiving and sending electromagnetic wave signal；And
Piezoelectric membrane, described piezoelectric membrane is arranged on the upper surface of described substrate, wherein, described two reflecting gratings, described fork
Finger transducer and described small size antenna are located between described substrate and described piezoelectric membrane.
3. system as claimed in claim 2 is it is characterised in that described exotic material is carborundum.
4. system as claimed in claim 2 is it is characterised in that described piezoelectric membrane is aluminum nitride piezoelectric film.
5. system as claimed in claim 2 is it is characterised in that described interdigital transducer is metal interdigital transducers.
6. the system as described in any one of claim 2-5, wherein, described surface acoustic wave resonance device is it is characterised in that described
Reflecting grating is metallic reflection grid.
7. system as claimed in claim 2 is it is characterised in that by the resonant frequency of described surface acoustic wave resonance device, described
The spread speed of the interdigital spacing of interdigital transducer and described surface acoustic wave determines the electrode of described interdigital transducer and described anti-
Penetrate the width of grid.
8. the system as claimed in claim 1 is it is characterised in that described core processor is zigbee single-chip microcomputer.
9. the system as claimed in claim 1 is it is characterised in that described wireless interrogation unit passes through described antenna to described sound table
Face wave resonance device sends electromagnetic wave signal or receives the electromagnetic wave signal sending from described surface acoustic wave resonance device, and to
Described display device sends described temperature measurement result.
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| CN106248244A (en) * | 2016-08-04 | 2016-12-21 | 珠海市科宏电子科技有限公司 | A kind of passive and wireless real time temperature monitoring system |
| US11011834B2 (en) * | 2017-06-27 | 2021-05-18 | Florida State University Research Foundation, Inc. | Metamaterials, radomes including metamaterials, and methods |
| CN107727266A (en) * | 2017-09-21 | 2018-02-23 | 广东电网有限责任公司惠州供电局 | A kind of MEMS temperature sensor and its switch cubicle temp measuring system |
| JP7240971B2 (en) * | 2019-06-27 | 2023-03-16 | 東京エレクトロン株式会社 | Antenna device and temperature detection method |
| CN111649833A (en) * | 2020-05-15 | 2020-09-11 | 国网福建省电力有限公司三明供电公司 | Passive wireless temperature sensor |
| CN116448179A (en) * | 2023-04-19 | 2023-07-18 | 湖北工业大学 | Three-signal simultaneous sensing passive flexible sensing system and application thereof |
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