CN104195560A - Anhydrous tetramethyl ammonium hydroxide stripping solution - Google Patents
Anhydrous tetramethyl ammonium hydroxide stripping solution Download PDFInfo
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- CN104195560A CN104195560A CN201410457193.3A CN201410457193A CN104195560A CN 104195560 A CN104195560 A CN 104195560A CN 201410457193 A CN201410457193 A CN 201410457193A CN 104195560 A CN104195560 A CN 104195560A
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- tetramethylammonium hydroxide
- stripping solution
- organic solvent
- aqueous stripping
- ammonium hydroxide
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to an anhydrous tetramethyl ammonium hydroxide stripping solution, which is mainly composed of tetramethyl ammonium hydroxide, propyl gallate and an organic solvent at the ratio of (3-7):3:17, wherein the organic solvent is formed by mixing one or two organic solvents and is dimethyl sulfoxide and/or an E200 solvent. A preparation method of the anhydrous tetramethyl ammonium hydroxide stripping solution comprises the following steps of 1, preparing a tetramethylammonium hydroxide/propyl gallate mixed solution; 2, mixing the mixed solution obtained in the step (1) and other organic solvents, and stirring for 30 minutes under ventilating; and 3, filtering the mixed solution obtained in the step 2 to be 0.2mu m. The use temperature of the anhydrous tetramethyl ammonium hydroxide stripping solution is 40-60 DEG C.
Description
Technical field
The present invention relates to dry etching field, specifically Tetramethylammonium hydroxide is without aqueous stripping solution.
Background technology
Metal etch (etching) is by materials'use chemical reaction or physical shock effect and the technology removing.Metal etch technology can be divided into wet etching (wet etching) and dry etching (dry etching) two classes.
Conventionally indication metal etch also claims photochemistry metal etch (photochemical etching); after referring to make a plate, develop by exposure; protective membrane that will metal etch region is removed; in the time of metal etch, contact chemical solution; reach the effect of dissolved corrosion, form effect concavo-convex or hollow out moulding.Can be used to the earliest manufacture the printing such as copperplate, photo zincography embossing plate, be also used in widely weight reduction (Weight Reduction) instrument panelling, nameplate and traditional processing method are difficult to the processing of the thin type workpiece of processing etc.; Develop through constantly improvement and processing unit, can also be used for the processing of aviation, machinery, chemical industry electronics sheet parts precision metallic etching products, especially on manufacture of semiconductor, metal etch indispensable technology especially.
Technical in aluminum metal dry etching, often has resistates and occurs, these resistatess form through high temperature after metal adds gas to add photoresist material, and aluminum metal also can be subject to dry etching gas corrosion simultaneously.Also there is no at present a kind of special Tetramethylammonium hydroxide that effective especially dry etching is used afterwards to aluminum metal without aqueous stripping solution.
Summary of the invention
The present invention, just for above technical problem, provides a kind of special Tetramethylammonium hydroxide that effective especially dry etching is used afterwards to aluminum metal without aqueous stripping solution.
Tetramethylammonium hydroxide, without aqueous stripping solution, is mainly made up of Tetramethylammonium hydroxide, Tenox PG, organic solvent, and wherein, the ratio between each component is Tetramethylammonium hydroxide: Tenox PG: organic solvent=3～7:3:17.Organic solvent forms for one or both organic solvents mix.Organic solvent is dimethyl sulfoxide (DMSO).Organic solvent is E200 solvent.
The present invention also provides the preparation method of Tetramethylammonium hydroxide without aqueous stripping solution, comprises the following steps: 1, preparation Tetramethylammonium hydroxide/Tenox PG mixing solutions; 2, the mixing solutions in step 1 is mixed with other organic solvent, ventilate and stir 30 minutes; 3, the mixing solutions in step 2 is filtered through 0.2 μ m.Tetramethylammonium hydroxide is 40 DEG C～60 DEG C without the use temperature of aqueous stripping solution.Wherein, step 1, step 2 all need be carried out in the tempering tank of nonmetal single material.
Tetramethylammonium hydroxide of the present invention mainly contains without the beneficial effect of aqueous stripping solution:
1, can not cause aluminum metal to damage.
2, formula is simple, easily mixes.
3, use temperature is easily controlled.
4, there is no the danger of burning or blast.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment 1
Tetramethylammonium hydroxide and Tenox PG are prepared into Tetramethylammonium hydroxide/Tenox PG mixing solutions in the ratio of 1:1, in the pure PE tempering tank with ventilation installation, Tetramethylammonium hydroxide/Tenox PG mixing solutions is mixed in the ratio of 1:2 with dimethyl sulfoxide (DMSO), ventilate and stir after 30 minutes, after 0.2 μ m filters, carry out the anhydrous of dry etching and peel off.
Through test, it is very obvious that this Tetramethylammonium hydroxide is peeled off effect without aqueous stripping solution to aluminum metal dry-etching residue, and owing to being anhydrous formulations, therefore can not cause the corrosion of aluminium.
Embodiment 2
Tetramethylammonium hydroxide and Tenox PG are prepared into Tetramethylammonium hydroxide/Tenox PG mixing solutions in the ratio of 7:3, in the pure PE tempering tank with ventilation installation, Tetramethylammonium hydroxide/Tenox PG mixing solutions, dimethyl sulfoxide (DMSO), E200 solution are mixed in the ratio of 7:8:5, ventilate and stir after 30 minutes, after 0.2 μ m filters, carry out the anhydrous of dry etching and peel off.
Through test, it is very obvious that this Tetramethylammonium hydroxide is peeled off effect without aqueous stripping solution to aluminum metal dry-etching residue, and owing to being anhydrous formulations, therefore can not cause the corrosion of aluminium.
Claims (7)
1. Tetramethylammonium hydroxide, without aqueous stripping solution, is mainly made up of Tetramethylammonium hydroxide, Tenox PG, organic solvent, and wherein, the ratio between each component is Tetramethylammonium hydroxide: Tenox PG: organic solvent=3～7:3:17.
2. Tetramethylammonium hydroxide, without aqueous stripping solution, is characterized in that described organic solvent forms for one or both organic solvents mix according to claim 1.
3. Tetramethylammonium hydroxide, without aqueous stripping solution, is characterized in that described organic solvent is dimethyl sulfoxide (DMSO) according to claim 1.
4. Tetramethylammonium hydroxide, without aqueous stripping solution, is characterized in that described organic solvent is E200 solvent according to claim 1.
5. Tetramethylammonium hydroxide, without aqueous stripping solution, is characterized in that described Tetramethylammonium hydroxide is 40 DEG C～60 DEG C without the use temperature of aqueous stripping solution according to claim 1.
6. Tetramethylammonium hydroxide, without the preparation method of aqueous stripping solution, mainly comprises the following steps: 1, preparation Tetramethylammonium hydroxide/Tenox PG mixing solutions; 2, the mixing solutions in step 1 is mixed with other organic solvent, ventilate and stir 30 minutes; 3, the mixing solutions in step 2 is filtered through 0.2 μ m.
7. Tetramethylammonium hydroxide, without the preparation method of aqueous stripping solution, is characterized in that described step 1, step 2 all carry out in the tempering tank of nonmetal single material according to claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410457193.3A CN104195560A (en) | 2014-09-10 | 2014-09-10 | Anhydrous tetramethyl ammonium hydroxide stripping solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410457193.3A CN104195560A (en) | 2014-09-10 | 2014-09-10 | Anhydrous tetramethyl ammonium hydroxide stripping solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104195560A true CN104195560A (en) | 2014-12-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410457193.3A Pending CN104195560A (en) | 2014-09-10 | 2014-09-10 | Anhydrous tetramethyl ammonium hydroxide stripping solution |
Country Status (1)
| Country | Link |
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| CN (1) | CN104195560A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106773563A (en) * | 2016-12-27 | 2017-05-31 | 昆山欣谷微电子材料有限公司 | Tetrapropyl amine bromide is without aqueous stripping solution |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003140364A (en) * | 2001-11-02 | 2003-05-14 | Mitsubishi Gas Chem Co Inc | Resist removing solution for copper wiring board |
| CN1444103A (en) * | 2002-03-12 | 2003-09-24 | 三菱瓦斯化学株式会社 | Optical photoresist stripping composition and cleaning composition |
| CN1873543A (en) * | 2005-05-12 | 2006-12-06 | 东京应化工业株式会社 | Stripping liquid for photoresist |
| CN101286016A (en) * | 2007-04-13 | 2008-10-15 | 安集微电子（上海）有限公司 | Low etching photoresist cleaning agent |
| CN101384694A (en) * | 2006-02-15 | 2009-03-11 | 马林克罗特贝克公司 | Stabilized, non-aqueous cleaning compositions for microelectronics substrates |
-
2014
- 2014-09-10 CN CN201410457193.3A patent/CN104195560A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003140364A (en) * | 2001-11-02 | 2003-05-14 | Mitsubishi Gas Chem Co Inc | Resist removing solution for copper wiring board |
| CN1444103A (en) * | 2002-03-12 | 2003-09-24 | 三菱瓦斯化学株式会社 | Optical photoresist stripping composition and cleaning composition |
| CN1873543A (en) * | 2005-05-12 | 2006-12-06 | 东京应化工业株式会社 | Stripping liquid for photoresist |
| CN101384694A (en) * | 2006-02-15 | 2009-03-11 | 马林克罗特贝克公司 | Stabilized, non-aqueous cleaning compositions for microelectronics substrates |
| CN101286016A (en) * | 2007-04-13 | 2008-10-15 | 安集微电子（上海）有限公司 | Low etching photoresist cleaning agent |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106773563A (en) * | 2016-12-27 | 2017-05-31 | 昆山欣谷微电子材料有限公司 | Tetrapropyl amine bromide is without aqueous stripping solution |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141210 |