CN104183650A - Oxide semiconductor thin film transistor - Google Patents
Oxide semiconductor thin film transistor Download PDFInfo
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- CN104183650A CN104183650A CN201410456678.0A CN201410456678A CN104183650A CN 104183650 A CN104183650 A CN 104183650A CN 201410456678 A CN201410456678 A CN 201410456678A CN 104183650 A CN104183650 A CN 104183650A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 51
- 239000001257 hydrogen Substances 0.000 claims abstract description 51
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 8
- 229910007541 Zn O Inorganic materials 0.000 claims description 5
- 229910007604 Zn—Sn—O Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical group [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention relates to an oxide semiconductor thin film transistor. Hydrogen concentration distribution is introduced into the area where a source metal electrode layer makes contact with a source electrode area and the area where a drain metal electrode layer makes contact with a drain electrode area. The hydrogen concentration introduced into an interface of the source metal electrode layer and the source electrode area and the hydrogen concentration introduced into an interface of the drain metal electrode layer and the drain electrode area are highest, and the hydrogen concentration introduced in the directions away from the interfaces decreases gradually. Furthermore, a source area portion and a drain area portion which are close to a channel area are not covered with the source metal electrode layer and the drain metal electrode layer, and hydrogen concentration distribution is not introduced into the end, away from the source area, of the source metal electrode layer, the end, away from the drain area, of the drain metal electrode layer and the channel area. Under the condition that the performance of the oxide semiconductor thin film transistor is not reduced, series resistance of the oxide semiconductor thin film transistor can be effectively reduced.
Description
Technical field
The present invention relates to a kind of thin-film transistor, especially a kind of oxide semiconductor thin-film transistor.
Background technology
Thin-film transistor is as a kind of field-effect semiconductor device, there is the important utilization can not be substituted in demonstration fields such as active matrix display drivings, performance and the manufacturing process of semiconductor active material on device has vital impact, thin-film transistor taking silicon as active semiconductor material tends to exist mobility low, the shortcoming that light sensitivity is strong.Transparent broad-band gap oxide semiconductor material taking zinc oxide as representative can be good at solving the shortcoming of silicon semiconductor material, comprises ZnO as the oxide semiconductor material that can be used for thin-film transistor, MgZnO, Zn-Sn-O, In-Zn-O, SnO, Ga
2o
3, In-Ga-O, In
30
2, the material of the excellent performances such as In-Ga-Zn-O.But along with demonstration field develops rapidly, at present more and more higher to the characteristic requirements of oxide semiconductor thin-film transistor, for example require less series resistance, higher mobility.
Summary of the invention
The invention reside in and solve in the situation that not causing oxide thin film transistor hydraulic performance decline, reduce the series resistance of oxide semiconductor thin-film transistor;
The invention provides a kind of thin-film transistor for solving the problems of the technologies described above, comprise dielectric substrate; Be positioned at the grid electrode layer in dielectric substrate; Be positioned at the gate insulator that covers described grid electrode layer in dielectric substrate; Oxide semiconductor layer is formed on gate insulator, and comprises the channel region just right with grid electrode layer and the source drain region that is positioned at channel region two ends; Metal electrode layer is leaked in source, is positioned in source drain region; It is characterized in that: the region contacting with described source drain region at described source leakage metal electrode layer has the hydrogen concentration distribution of introducing;
Further, in described source metal electrode layer and interface, described source region, and the hydrogen concentration that introduce the interface of described drain metal electrode and described drain region is the highest, and the hydrogen concentration of introducing in the direction away from interface diminishes gradually;
Further, leak in described source the hydrogen concentration distribution that metal electrode layer is not introduced away from one end of described source and drain areas;
Further, do not cover described source-drain electrode metal electrode layer in the described source and drain areas part near described channel region, and in described channel region, there is no the hydrogen concentration distribution of introducing;
Further, the length of the described source and drain areas part of the described close described channel region that does not cover described source-drain electrode metal electrode layer be source-drain electrode area length of field 1/8 to 1/10 between;
Further, described source leakage metal electrode layer is selected from the one in aluminium, titanium, molybdenum, neodymium, yttrium or tantalum;
Further, described oxide semiconductor layer is the one in Zn-Sn-O, In-Zn-O, In-Ga-O, MgZnO, In2O3 layer;
Further, described oxide semiconductor layer is MgZnO layer, and this MgZnO layer of side prepares by Sol-Gel method.
Brief description of the drawings
Fig. 1-3 oxide semiconductor thin-film transistor of the present invention is at the sectional view of each preparatory phase.
Embodiment
The present invention can reduce source electrode, and the resistance between drain electrode and oxide semiconductor can not thought threshold voltage, cut-off current and mobility by shadow simultaneously;
Referring to the oxide semiconductor thin-film transistor sectional view of the present invention shown in Fig. 3, transistor 100 comprises dielectric substrate 101, in this dielectric substrate 101, deposit bottom grid layer 103, insulating cover 102 covers in dielectric substrate 101 to cover the form of bottom grid 103 completely, to play the effect of insulation isolation, as the gate dielectric layer of thin-film transistor, these gate dielectric layer 102 materials are elected silicon oxide layer as simultaneously.Oxide semiconductor layer 104 is positioned on this gate dielectric layer 102, the just right oxide semiconductor region of bottom grid 103 is formed as channel region 1041, one side in the region of channel region 1041 both sides is formed as source region 1042, and the opposite side of channel region is formed as drain region 1042; Source metal electrode 105 and drain metal electrode 105 are formed on source region 1042 and drain region 1042, do not covering source metal electrode layer 105 and drain metal electrode layer 105 near source region 1042 and drain region 1042 parts of channel region 1041, this partial-length (along orientation) be preferably source-drain electrode area length of field 1/4 to 1/2 between.Interface zone at source metal electrode layer 105 with source region 1042, and there is hydrogen ion doped at drain metal electrode layer 105 and the interface zone of drain region 1042.This interface zone is the highest with the hydrogen concentration of the interface introducing of drain region 1042 with 1042 interfaces, source region and drain metal electrode 105 at source metal electrode layer 105, and the hydrogen concentration of introducing in the direction away from interface diminishes gradually, that is to say, the hydrogen concentration of introducing diminishes towards the inside of source metal electrode layer 105 gradually from source metal electrode layer 105 and the interface of source region 1042, diminishes gradually towards the inside of source region 1042; The hydrogen concentration of introducing diminishes towards the inside of drain metal electrode layer 105 gradually from drain metal electrode layer 105 and the interface of drain region 1042, diminishes gradually towards the inside of drain region 1042.One end at source metal electrode layer 105 away from source region 1042, conventionally contact with wiring layer the hydrogen distribution that does not introduce in the source metal electrode layer region that is connected, that is to say that the hydrogen concentration distribution of introducing does not extend to the surface of source metal electrode layer 105, doing is like this degeneration in order to prevent surface of metal electrode, the weatherability of intensifier electrode and stability; The hydrogen that same drain metal electrode layer 105 is not also introduced away from one end of drain region 1042 distributes.The hydrogen that introduce source region 1042 distributes and does not extend to channel region 1041, be in channel region 1041, not have the hydrogen of introducing to distribute, if the hydrogen of introducing enters into channel region, can cause the decay of device performance, for example can have a strong impact on cut-off current and threshold voltage, particularly can produce more serious impact to the mobility of channel region, in technique, often drive away the hydrogen of channel region so that the oxide semiconductor of channel region is purer with heat treatment; The hydrogen that introduce same drain region 1042 distributes and does not also extend to channel region 1041.Meanwhile, can guarantee source leak the hydrogen distribution that interface zone that metal electrode layer 105 contacts with source and drain areas 1042 introduces and can not enter channel region 1041 not covering source metal electrode layer 105 and drain metal electrode layer 105 near the source region 1042 of channel region and drain region 1042 parts;
On the one hand, the introducing of hydrogen can bring the resistance between superior source-drain electrode and oxide semiconductor, significantly reduces device series resistance, improves device efficiency; On the one hand, the too much introducing of hydrogen or hydrogen are incorporated into position improperly can bring negative effect to device again in order.Therefore the CONCENTRATION DISTRIBUTION of the hydrogen of introducing in metal electrode is leaked in source, and in the CONCENTRATION DISTRIBUTION of source and drain areas, the balance of device performance is played an important role, for example in metal electrode is leaked in whole source, introduce hydrogen distribution or introduce hydrogen distribution at whole source and drain areas, the counter productive that the introducing of hydrogen brings so will exceed positive effect; The interface of leaking metal electrode and source and drain areas due to the source that is created in of series resistance is significantly greater than away from this interface.Therefore, the interface maximum of metal electrode and source and drain areas is leaked in the source that is distributed in of the hydrogen concentration of introducing, and reduces gradually in the direction of the interface away from source leakage metal electrode and source and drain areas; Its positive effect of balance and counter productive, improve device performance on the whole so to greatest extent;
By describing a kind of preparation technology of thin-film transistor of the present invention so that the present invention is understood in more detail, singly it should be noted that this preparation technology is tightly attainable a kind of mode below, can not limit the present invention can realize by other similar modes.Fig. 1-3 are the sectional view of thin-film transistor, form bottom grid layer 103 in dielectric substrate 101, and the formation of this grid layer 103 for example can be used the method for CVD deposition; In bottom gate electrode 103, form gate insulating film 102, the oxide insulating film such as this gate insulating film 102 for example can silica, aluminium oxide, hafnium oxide, can be also other applicable dielectric film; On gate insulating film, 102 form oxide semiconductor film;
This oxide semiconductor film can be by selecting suitable target through magnetron sputtering technique deposition, Zn-Sn-O, In-Zn-O or In-Ga-O film, and preparation temperature is at 500-600 degree; Also can be by the Sol-Gel legal system more MgZnO film of high mobility of getting everything ready; Can also utilize ion beam depositing legal system for In2O3 film.Form afterwards the oxide semiconductor layer 104 of patterning by etching, the thickness of oxide semiconductor layer preferably in 20 nanometers between 500 nanometers, the adjusting of its thickness can by control splash-proofing sputtering process parameter realize.Oxide semiconductor layer 104 after patterning, boron doping forms source-drain area 1042, and the oxide semiconductor film region just right with gate electrode layer is channel region 1041;
Introduce hydrogen at source-drain area 1042 away from the surface of channel region 1041, but hydrogen is not introduced on the surface in source and drain areas 1042 parts near channel region 1041, with isolation hydrogen and raceway groove, this length of not introducing the part of hydrogen be preferably source and drain areas 1/2 to 1/4 between.The introducing of hydrogen can be that hydrogen ion surface is infiltrated, the now distribution of hydrogen is confined to region as thin as a wafer, source and drain areas 1042 surfaces, but can not use the high doping way of Implantation homenergic that for example contains hydrogen, this is because high-octane hydrogen easily causes larger lattice damage, and the hydrogen of upper state can not be distributed in region as thin as a wafer, source and drain areas 1042 surfaces, this by after technique in can not form introducing hydrogen concentration gradient distribute.Form afterwards patterned source and leak metal electrode layer 105, metal electrode layer 105 is leaked in this source has the surface of hydrionic source and drain areas 1042 to contact with source and drain areas in introducing.Source is leaked metal electrode layer 105 and can be obtained by the depositing operation of knowing, for example, can be the materials such as aluminium, titanium, molybdenum or neodymium, yttrium, tantalum.After forming patterned source leakage metal electrode layer 105, this thin-film transistor 100 is heat-treated to activate and be distributed in the source and drain areas surface hydrogen in region as thin as a wafer, and spread to both sides, to obtain the oxide thin film transistor of the needed hydrogen concentration gradient with introducing, heat treatment temperature is preferably 350-600 degree Celsius, more preferably 450 degrees Celsius; Finally deposit insulating bag overlay film with capping oxide semiconductor layer and source-drain area and source-drain electrode layer.
Claims (9)
1. a thin-film transistor, comprises dielectric substrate; Be positioned at the grid electrode layer in dielectric substrate; Be positioned at the gate insulator that covers described grid electrode layer in dielectric substrate; Oxide semiconductor layer is formed on gate insulator, and comprises the channel region just right with grid electrode layer and the source drain region that is positioned at channel region two ends; Metal electrode layer is leaked in source, is positioned in source drain region; It is characterized in that: leak the region introducing hydrogen concentration distribution that metal electrode layer contacts with described source drain region in described source.
2. a thin-film transistor, comprises dielectric substrate; Be positioned at the grid electrode layer in dielectric substrate; Be positioned at the gate insulator that covers described grid electrode layer in dielectric substrate; Oxide semiconductor layer is formed on gate insulator, and comprises the channel region just right with grid electrode layer and the source drain region that is positioned at channel region two ends; Metal electrode layer is leaked in source, is positioned in source drain region; It is characterized in that: in described source metal electrode layer and interface, described source region, and the hydrogen concentration that introduce the interface of described drain metal electrode and described drain region is the highest, and the hydrogen concentration of introducing in the direction away from interface diminishes gradually.
3. a thin-film transistor, comprises dielectric substrate; Be positioned at the grid electrode layer in dielectric substrate; Be positioned at the gate insulator that covers described grid electrode layer in dielectric substrate; Oxide semiconductor layer is formed on gate insulator, and comprises the channel region just right with grid electrode layer and the source drain region that is positioned at channel region two ends; Metal electrode layer is leaked in source, is positioned in source drain region; It is characterized in that: the region contacting with described source drain region at described source leakage metal electrode layer has the hydrogen concentration distribution of introducing, and leaks in described source the hydrogen concentration distribution that metal electrode layer is not introduced away from one end of described source and drain areas.
4. thin-film transistor as claimed in claim 3, does not cover described source-drain electrode metal electrode layer in the described source and drain areas part near described channel region, and in described channel region, there is no the hydrogen concentration distribution of introducing.
5. thin-film transistor as claimed in claim 2, do not cover described source-drain electrode metal electrode layer in the described source and drain areas part near described channel region, leak in described source the hydrogen concentration distribution that metal electrode layer is not introduced away from one end of described source and drain areas, and in described channel region, there is no the hydrogen concentration distribution of introducing.
6. the thin-film transistor as described in claim 4 or 5, the length of the described source and drain areas part of the described close described channel region that does not cover described source-drain electrode metal electrode layer be source-drain electrode area length of field 1/4 to 1/2 between.
7. the thin-film transistor as described in claim 1-6, described oxide semiconductor layer is the one in Zn-Sn-O, In-Zn-O, In-Ga-O, MgZnO, In2O3 layer.
8. thin-film transistor as claimed in claim 7, if described oxide semiconductor layer is MgZnO layer, this MgZnO layer of side prepares by Sol-Gel method.
9. the thin-film transistor as described in claim 1-8, is selected from the one in aluminium, titanium, molybdenum, neodymium, yttrium or tantalum if metal electrode layer is leaked in described source.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201111A (en) * | 2014-09-18 | 2014-12-10 | 六安市华海电子器材科技有限公司 | Method for manufacturing oxide semiconductor thin-film transistors |
| CN108962757A (en) * | 2018-07-12 | 2018-12-07 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and its manufacturing method, display base plate, display device |
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| US20120161122A1 (en) * | 2010-12-28 | 2012-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2013065600A1 (en) * | 2011-11-02 | 2013-05-10 | シャープ株式会社 | Thin-film transistor, method for manufacturing same, and display device |
| CN103915490A (en) * | 2012-12-31 | 2014-07-09 | 三星显示有限公司 | Thin film transistor, thin film transistor array panel including the same and manufacturing method thereof |
| CN204243048U (en) * | 2014-09-10 | 2015-04-01 | 六安市华海电子器材科技有限公司 | A kind of oxide semiconductor thin-film transistor |
| CN105206677A (en) * | 2015-07-03 | 2015-12-30 | 友达光电股份有限公司 | Oxide semiconductor thin film transistor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104201111A (en) * | 2014-09-18 | 2014-12-10 | 六安市华海电子器材科技有限公司 | Method for manufacturing oxide semiconductor thin-film transistors |
| CN108962757A (en) * | 2018-07-12 | 2018-12-07 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and its manufacturing method, display base plate, display device |
| WO2020010768A1 (en) * | 2018-07-12 | 2020-01-16 | Boe Technology Group Co., Ltd. | Thin film transistor, display panel, and method of fabricating thin film transistor |
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