CN104183649A - Threshold-voltage-adjustable thin film transistor - Google Patents
Threshold-voltage-adjustable thin film transistor Download PDFInfo
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- CN104183649A CN104183649A CN201410442648.4A CN201410442648A CN104183649A CN 104183649 A CN104183649 A CN 104183649A CN 201410442648 A CN201410442648 A CN 201410442648A CN 104183649 A CN104183649 A CN 104183649A
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- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000009825 accumulation Methods 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- BRGOCSWOKBOIOJ-UHFFFAOYSA-N N.[O-2].[Hf+4] Chemical compound N.[O-2].[Hf+4] BRGOCSWOKBOIOJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 230000005641 tunneling Effects 0.000 abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000005684 electric field Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 235000014692 zinc oxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 this Chemical compound 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a threshold-voltage-adjustable thin film transistor which comprises a substrate, a first grid electrode arranged on the substrate, a first gate oxide layer arranged on the substrate and covering the first grid electrode, a channel layer arranged on the first gate oxide layer, a source electrode, a drain electrode, a tunneling layer, a storage layer arranged on the tunneling layer, a blocking layer arranged on the storage layer and a second grid electrode arranged on the blocking layer, wherein the source electrode and the drain electrode are arranged on the two opposite sides of the channel layer, the tunneling layer is arranged on the source electrode, the drain electrode and the channel layer. The second grid electrode is located over the first grid electrode. According to the threshold-voltage-adjustable thin film transistor, the method that the threshold voltage of the transistor is adjusted through the charge captured in the storage layer, and the threshold-voltage-adjustable thin film transistor has the advantages of being simple in structure, low in power consumption, high in stability, compatible with the prior art and the like.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of thin-film transistor that possesses threshold voltage adjustments function.
Background technology
Thin-film transistor (Thin Film Transistor, TFT) is one of kind of field-effect transistor, and it has extensive use in flat panel display.Usually, TFT comprises the parts such as grid, gate oxide, channel layer, source electrode and drain electrode, and the voltage that it is applied on grid by change regulates the conductivity of channel layer, and then forms conducting state or off-state between control source electrode and drain electrode.For the TFT of N-shaped raceway groove (TFT of p-type raceway groove in contrast), in the time being added in voltage on grid and being greater than threshold voltage, between source electrode and drain electrode, form conducting state; Otherwise, in the time that grid voltage is less than threshold voltage, between source electrode and drain electrode, form off-state.Therefore, threshold voltage is an Important Parameters that determines TFT performance.
In electronic system, often wish that TFT its threshold voltage after completing still can adjust, to meet the requirement of different application, for example, as the TFT driving, little threshold voltage is conducive to improve TFT driving force, and for the TFT as switch, large threshold voltage contributes to improve the antijamming capability of TFT.At present, can adjust the threshold voltage of TFT by increasing threshold voltage compensation circuit.But this dependence circuit design is adjusted the method for threshold voltage, greatly increase complexity and the cost of electronic system design and manufacture.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, provide a kind of device itself to possess the thin-film transistor of threshold voltage adjustments function, simple in structure, low-power consumption and high stability.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
The thin-film transistor that a kind of threshold voltage is adjustable, comprise substrate, be located at the first grid on substrate, be located on substrate and cover the first grid oxide layer of first grid, be located at the channel layer in first grid oxide layer, be located on channel layer source electrode, the drain electrode of both sides relatively, be located on channel layer and source electrode, drain electrode on tunnel layer, be located at the accumulation layer on tunnel layer, be located at the barrier layer in accumulation layer, and be located at the second grid on barrier layer, described second grid is positioned at directly over first grid.
Further, described tunnel layer is the silicon dioxide of thickness at 3 nm～15 nm.
Further, described accumulation layer is silicon nitride, hafnium oxide or the nitrogen hafnium oxide of thickness at 2 nm～10 nm.
Further, described barrier layer is the alundum (Al2O3) of thickness at 10 nm～50 nm.
Beneficial effect: the TFT that threshold voltage of the present invention is adjustable, before the normal work of TFT, first on second grid, apply power supply, the electric field producing makes the electric charge in channel layer cross channel layer and is injected into and is trapped in accumulation layer, after completing required charge injection, remove the power supply being added on second grid.The electric charge that the potential well forming between tunnel layer and barrier layer and accumulation layer has effectively been guaranteed to be trapped in accumulation layer can not be lost.After this, the electric charge in accumulation layer is equivalent to stabilized power source, and the electric field of its generation can change the charge carrier number in channel layer, and then adjusting threshold voltage.Electric charge number in accumulation layer is according to the required threshold voltage decision of TFT, and the power values and the time that are added on second grid by adjustment are controlled.Layer to be stored is captured after required electric charge, removes the power supply on second grid, and TFT completes threshold voltage adjustment and can enter normal operating conditions.The described power supply that is added in second grid at least twice is greater than the power supply that is added in first grid when TFT normally works, to ensure that forming enough large electric field makes the charge injection in channel layer arrive accumulation layer.
Compared with prior art, the beneficial effect that the present invention has is:
(1) it is adjustable that the TFT that the present invention proposes relies on device architecture itself just can realize threshold voltage, without by threshold compensation circuitry, greatly simplified complexity and the cost of electronic system design and manufacture.
(2) TFT that the present invention proposes relies on the electric charge being trapped in accumulation layer to carry out adjusting threshold voltage as power supply, simple to operate, power or just can realize threshold voltage adjustments by additional circuit without extra, therefore having reduced power consumption, design difficulty and the area of electronic system; In addition, the TFT that the present invention proposes relies on the method that is trapped in the electric charge adjusting threshold voltage in accumulation layer, is not subject to the external environment influence such as noise, and stability is high, and antijamming capability is strong; The layer mechanism being located on TFT channel layer avoided channel layer to contact with air, further improved stability and the antijamming capability of TFT.
(3) TFT that the present invention proposes is simple in structure, structure and material completely with prior art compatibility, be applicable to producing in batches.
Brief description of the drawings
Fig. 1 is the structural representation of the adjustable thin-film transistor of a kind of threshold voltage;
In figure, have: substrate 10, first grid 11, first grid oxide layer 12, channel layer 13, source electrode 14, drain electrode 15, second grid 17, tunnel layer 21, accumulation layer 22, barrier layer 23.
Embodiment
Below in conjunction with accompanying drawing, the present invention is done further and explained.
As shown in Figure 1, the TFT that possesses threshold voltage adjustments function of the present invention comprises substrate 10, first grid 11, first grid oxide layer 12, channel layer 13, source electrode 14, drain electrode 15, second grid 17, tunnel layer 21, accumulation layer 22, barrier layer 23.
Wherein, substrate 10 is flexible substrate or rigid substrate, can be glass, insulating polymer or the silicon chip that is coated with oxide layer.
First grid 11 is arranged on substrate 10, and is arranged on the central area of substrate 10.
First grid oxide layer 12 is arranged on substrate 10, and covers first grid 11.
Channel layer 13 is arranged in first grid oxide layer 12.Channel layer 13 can adopt inorganic matter semiconductor or organic substance semiconductor, comprises polysilicon, amorphous silicon, zinc oxide, indium gallium zinc oxide, CuPc or pentacene.
Source electrode 14, drain electrode 15 are arranged on channel layer 13, and are arranged on relative both sides on channel layer 13.
Tunnel layer 21 is arranged on channel layer 13 and covers source electrode 14, drain electrode 15.Tunnel layer 21 is selected the dielectric material with large energy gap, and as silicon dioxide, thickness is at 3 nm～15 nm.If tunnel layer 21 thickness are less than 3 nm, the electric charge being trapped in accumulation layer 22 easily leaks through tunnel layer 21; If tunnel layer 21 thickness are greater than 15 nm, electric charge is difficult to be injected into accumulation layer 22 from channel layer 13.
Accumulation layer 22 is arranged on tunnel layer 21.Accumulation layer 22 is selected the material with little energy gap, and as silicon nitride, hafnium oxide or nitrogen hafnium oxide, like this, tunnel layer 21 and barrier layer 23 form potential well with accumulation layer 22, and the electric charge that prevents from being trapped in accumulation layer is lost.The thickness of accumulation layer 22 is at 2 nm～10 nm, if accumulation layer 22 is less than 2 nm, accumulation layer 22 is not enough to capture abundant electric charge, if accumulation layer 22 is greater than 10 nm, is unfavorable for that electric charge is injected into accumulation layer from channel layer.
Barrier layer 23 is arranged in accumulation layer 22.The dielectric material with large energy gap and high-k is selected on barrier layer, as alundum (Al2O3), is beneficial to trap-charge and prevents charge leakage.Barrier layer 23 thickness are at 10 nm～50 nm, if barrier layer 23 is less than 10 nm, the electric charge being trapped in accumulation layer 22 easily leaks through barrier layer 23; If barrier layer 23 is greater than 50 nm, owing to being applied to, the electric field of tunnel layer 21 is too little, and electric charge is difficult to be injected into accumulation layer 22 from channel layer 13.
Second grid 17 be arranged on barrier layer 23 and be located at first grid 11 directly over.
In addition in scheme of the present invention, all not doing specifies, is material as known in the art or technology.
The present invention adopts bottom gate type TFT as embodiment, and the present embodiment adopts surface coverage to have the silicon chip of 1 μ m silicon dioxide as substrate 10; Deposit 50 nm low-resistance p-type polysilicons on substrate 10, and photoetching forms first grid 11; Use sputtering method deposit 60 nm hafnium oxide lanthanums (HfLaO) on substrate 10 as first grid oxide layer 12, and to cover first grid 11; Use sputtering method deposit 60 nm indium gallium zinc oxides (InGaZnO) as channel layer 13; Sample is annealed under the environment of nitrogen protection subsequently, and to reduce the defect in first grid oxide layer 12 and channel layer 13, annealing conditions is 400
ounder C, continue 10 minutes; Make deposited by electron beam evaporation and stripping technology deposit titanium/gold (20 nm/80 nm) on channel layer 13 form source electrode 14, drain electrode 15, titanium is herein for improving the adhesiveness of gold and channel layer; Use the method for enhancement mode PCVD (PECVD) to form 5 nm silicon dioxide (SiO in channel layer 13 and source electrode 14, drain electrode 15
2) as tunnel layer 21; Use sputtering method on tunnel layer 21, to form 3 nm nitrogen hafnium oxide (HfON) as accumulation layer 22; Use the method for atomic layer deposition (ALD) in accumulation layer 22, to form 20 nm alundum (Al2O3) (Al
2o
3) as barrier layer 23; Use the method for above-mentioned formation first grid 11 on barrier layer 23, to form second grid 17; Finally, sample is annealed to reduce defect and is improved contacting of grid and oxide layer under the nitrogen environment that contains 5 % hydrogen.
In the present embodiment, in order to regulate the threshold voltage of TFT, on second grid 17, add a positive supply temporarily, add power supply value be+19 V, and continue 1 second, negative electrical charge will be injected into and be trapped in accumulation layer 22 from channel layer 13.The electric charge that the potential well forming between tunnel layer 21 and barrier layer 23 and accumulation layer 22 has prevented from being trapped in accumulation layer 22 is lost.Now, the negative electrical charge in accumulation layer 22 is equivalent to a constant negative supply, and the electric field of generation tails off number of electrons in channel layer 13, thereby causes that threshold voltage increases; Under these conditions, cause that by detection threshold voltage approximately increases by 2.9 V.On second grid 17, add a negative supply temporarily, add power supply value be-23 V, and continue 1 second, cause that threshold voltage approximately reduces 2.9 V.
Wherein, the layer structure being located on channel layer 13 avoided channel layer 13 to contact with air, further improved stability and the antijamming capability of TFT.It is pointed out that way of the present invention is also applicable to top gate type TFT.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. the thin-film transistor that threshold voltage is adjustable, it is characterized in that, comprise substrate (10), be located at the first grid (11) on substrate (10), be located on substrate (10) and the first grid oxide layer (12) of covering first grid (11), be located at the channel layer (13) in first grid oxide layer (12), be located at the source electrode (14) of the upper relative both sides of channel layer (13), drain electrode (15), be located on channel layer (13) and source electrode (14), tunnel layer (21) in drain electrode (15), be located at the accumulation layer (22) on tunnel layer (21), be located at the barrier layer (23) in accumulation layer (22), and be located at the second grid (17) on barrier layer (23), described second grid (17) is positioned at directly over first grid (11).
2. according to the adjustable transistor of threshold voltage described in right 1, it is characterized in that, described tunnel layer (21) is the silicon dioxide of thickness at 3 nm～15 nm.
3. according to the adjustable transistor of threshold voltage described in right 1, it is characterized in that, described accumulation layer (22) is silicon nitride, hafnium oxide or the nitrogen hafnium oxide of thickness at 2 nm～10 nm.
4. according to the adjustable transistor of threshold voltage described in right 1, it is characterized in that, described barrier layer (23) is the alundum (Al2O3) of thickness at 10 nm～50 nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410442648.4A CN104183649A (en) | 2014-09-03 | 2014-09-03 | Threshold-voltage-adjustable thin film transistor |
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| CN201410442648.4A CN104183649A (en) | 2014-09-03 | 2014-09-03 | Threshold-voltage-adjustable thin film transistor |
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| CN201410442648.4A Pending CN104183649A (en) | 2014-09-03 | 2014-09-03 | Threshold-voltage-adjustable thin film transistor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105185708A (en) * | 2015-09-21 | 2015-12-23 | 西安交通大学 | Amorphous IGZO transparent oxide thin film by H2 processing and preparation method thereof |
| CN106504995A (en) * | 2016-11-09 | 2017-03-15 | 杭州潮盛科技有限公司 | The method of regulation and control metal oxide thin-film transistor phase inverter threshold voltage |
| CN107301879A (en) * | 2016-04-15 | 2017-10-27 | 东南大学 | A kind of adjustable thin film transistor (TFT) of threshold voltage as nonvolatile memory purposes |
| CN113035961A (en) * | 2021-02-25 | 2021-06-25 | 西交利物浦大学 | Synapse type thin film transistor, preparation method thereof and operation array |
| WO2023109077A1 (en) * | 2021-12-14 | 2023-06-22 | 上海集成电路制造创新中心有限公司 | Erasable memory and manufacturing method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050199879A1 (en) * | 2004-03-12 | 2005-09-15 | Hoffman Randy L. | Semiconductor device |
| JP2008283013A (en) * | 2007-05-11 | 2008-11-20 | Sony Corp | Semiconductor device and driving method thereof, and display unit and driving method thereof |
-
2014
- 2014-09-03 CN CN201410442648.4A patent/CN104183649A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050199879A1 (en) * | 2004-03-12 | 2005-09-15 | Hoffman Randy L. | Semiconductor device |
| JP2008283013A (en) * | 2007-05-11 | 2008-11-20 | Sony Corp | Semiconductor device and driving method thereof, and display unit and driving method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105185708A (en) * | 2015-09-21 | 2015-12-23 | 西安交通大学 | Amorphous IGZO transparent oxide thin film by H2 processing and preparation method thereof |
| CN107301879A (en) * | 2016-04-15 | 2017-10-27 | 东南大学 | A kind of adjustable thin film transistor (TFT) of threshold voltage as nonvolatile memory purposes |
| CN107301879B (en) * | 2016-04-15 | 2020-06-02 | 东南大学 | Application of thin film transistor with adjustable threshold voltage as nonvolatile memory |
| CN106504995A (en) * | 2016-11-09 | 2017-03-15 | 杭州潮盛科技有限公司 | The method of regulation and control metal oxide thin-film transistor phase inverter threshold voltage |
| CN106504995B (en) * | 2016-11-09 | 2019-07-16 | 杭州潮盛科技有限公司 | Regulate and control the method for metal oxide thin-film transistor phase inverter threshold voltage |
| CN113035961A (en) * | 2021-02-25 | 2021-06-25 | 西交利物浦大学 | Synapse type thin film transistor, preparation method thereof and operation array |
| WO2023109077A1 (en) * | 2021-12-14 | 2023-06-22 | 上海集成电路制造创新中心有限公司 | Erasable memory and manufacturing method therefor |
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Application publication date: 20141203 |