CN104178729A - Conductive film, and preparation method and application thereof - Google Patents
Conductive film, and preparation method and application thereof Download PDFInfo
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- CN104178729A CN104178729A CN201310193102.5A CN201310193102A CN104178729A CN 104178729 A CN104178729 A CN 104178729A CN 201310193102 A CN201310193102 A CN 201310193102A CN 104178729 A CN104178729 A CN 104178729A
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Abstract
The invention provides a conductive material. A chemical formula of the conductive material is CdO:xMe<3+>, wherein x ranges from 0 to 0.08; and Me is at least one selected from aluminium ion, gallium element and indium element. A nanowire scale conductive film prepared by using the conductive material can guarantee low resistance and high transmittance, has scattering efficiency, and is beneficial to increase light-extraction efficiency. The invention also provides a preparation method and an application of the conductive film.
Description
Technical field
The present invention relates to photoelectric semiconductor material, particularly relate to conductive film, its preparation method, use substrate, its preparation method and the organic electroluminescence device of the organic electroluminescence device of this conductive film.
Background technology
Conductive film electrode is the basic component of organic electroluminescence device (OLED), and the quality of its performance directly affects the luminous efficiency of whole device.Wherein, the doped semiconductor of Cadmium oxide is Recent study transparent conductive film material the most widely, has higher visible light transmittance rate and low resistivity.But improve the luminous efficiency of device, require transparent conductive film anode to there is higher surface work function.And the work function of the zinc oxide of aluminium, gallium and indium doping generally only has 4.3eV, through also reaching 4.5～5.1eV after the processing such as UV optical radiation or ozone, also has larger energy level difference distance with the HOMO energy level (being typically 5.7～6.3eV) of general organic luminous layer, cause the increase of carrier injection potential barrier, hinder the raising of luminous efficiency.
Summary of the invention
Based on this, be necessary the problem lower for conductive film work function, provide a kind of electro-conductive material, transparent conductive film, its preparation method of nano wire, the substrate that uses the organic electroluminescence device of this conductive film, its preparation method and organic electroluminescence device.
One aspect of the present invention provides a kind of electro-conductive material, and its chemical formula is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
A preparation method for electro-conductive material, comprises the following steps: according to CdO:xMe
3+the stoichiometric ratio of each element takes CdO and Me
2o
3powder also mixes, and wherein, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element; And
The powder mixing sintering at 900 DEG C～1300 DEG C is obtained to chemical formula for 0.5 hour～5 hours is CdO:xMe
3+electro-conductive material.
Second aspect present invention provides a kind of conductive film, and the chemical formula of this conductive film material is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
Described conductive film is the conductive film of nano thread structure, and described nanowire diameter is 60nm～450nm.
A preparation method for conductive film, comprises the following steps:
According to CdO:xMe
3+the stoichiometric ratio of each element takes CdO and Me
2o
3powder also mixes and obtains target, and wherein, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element;
The powder mixing sintering at 900 DEG C～1300 DEG C is obtained to chemical formula for 0.5 hour～5 hours is CdO:xMe
3+target;
The vacuum cavity that described target and substrate is packed into magnetic-controlled sputtering coating equipment, wherein, the vacuum tightness of vacuum cavity is 1.0 × 10
-3pa～1.0 × 10
-5pa;
Adjusting magnetron sputtering plating processing parameter is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C; And
Peel off described substrate, obtain described conductive film.
Third aspect present invention provides a kind of substrate of organic electroluminescence device, comprises the substrate and the conductive membrane layer that stack gradually, and wherein the chemical formula of conductive film layer material is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
Conductive film in described substrate is the conductive film of nano thread structure, and described nanowire diameter is 60nm～450nm.
A preparation method for the substrate of organic electroluminescence device, comprises the following steps:
According to CdO:xMe
3+the stoichiometric ratio of each element takes CdO and Me
2o
3powder also mixes and obtains target, and wherein, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element;
The powder mixing sintering at 900 DEG C～1300 DEG C is obtained to chemical formula for 0.5 hour～5 hours is CdO:xMe
3+target;
The vacuum cavity that described target and substrate is packed into magnetic-controlled sputtering coating equipment, wherein, the vacuum tightness of vacuum cavity is 1.0 × 10
-3pa～1.0 × 10
-5pa;
Adjusting magnetron sputtering plating processing parameter is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
Fourth aspect present invention provides a kind of organic electroluminescence device, comprises the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that, described anode is conductive film, and the chemical formula of this conductive film material is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
Above-mentioned conductive film is at 300～900nm wavelength region visible light transmissivity 88%～94%, square resistance scope 12～38 Ω/, surface work function 5.1～6.2eV; The preparation method of above-mentioned conductive film, adopt laser ablation target, make the ablated one-tenth atom of material in target or the particle of ionic group, in the process that particle deposits in substrate, by passing into a large amount of rare gas elementes, make particle passivation, on substrate, disperse nucleation, then at each nucleation site vertical-growth, the pillared nano wire of shape; Use the anode of this conductive film as organic electroluminescence device, between the surface work function of conductive film and the HOMO energy level of general organic luminous layer, gap is less, has reduced the injection barrier of current carrier, can improve significantly luminous efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the organic electroluminescence device of an embodiment;
Fig. 2 is the transmitted spectrum spectrogram of the conductive film prepared of embodiment 1;
Fig. 3 is the electron-microscope scanning figure of the conductive film prepared of embodiment 1;
Fig. 4 is voltage and electric current and the brightness relationship figure of device embodiment.
Embodiment
Below in conjunction with the drawings and specific embodiments, to electro-conductive material, conductive film, its preparation method, the substrate that uses the organic electroluminescence device of this conductive film, its preparation method and organic electroluminescence device are further illustrated.
Be specific embodiment below.
Embodiment 1
Selecting purity is 99.9% powder, by CdO and Al
2o
3powder according to mol ratio be 0.96:0.04 after even mixing, at 1250 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump
-4pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 10Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W.Sputter obtains CdO:0.04Al
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 12 Ω/, surface work function tester records surface work function 6.0eV.
Refer to Fig. 2, Figure 2 shows that the transmitted spectrum of the transparent conductive film obtaining, use ultraviolet-visible pectrophotometer test, test wavelength is 300～900nm.Film has reached 91% at visible ray 470～790nm wavelength region average transmittances as seen from Figure 2.
Refer to Fig. 3, Fig. 3 is the electron-microscope scanning figure of the conductive film prepared of embodiment 1, and as can be seen from Figure 3 the diameter of nano wire is taking 60nm～450nm as main.
Refer to Fig. 1, the organic electroluminescence device 300 of an embodiment comprises the substrate 301, anode 302, luminescent layer 303 and the negative electrode 304 that stack gradually.
Anode 302 is made up of conductive film 100, and conductive film 100 chemical formulas are CdO:0.04Al
3+transparent conductive film.
Substrate 301 is glass substrate.Luminescent layer 303 materials are Alq
3and the material of negative electrode 304 is silver.
Refer to Fig. 4, Fig. 4 is voltage and electric current and the brightness relationship figure of the organic electroluminescence device prepared of above-mentioned device embodiment, in accompanying drawing 4, curve 1 is voltage and current density relation curve, can find out that device starts from 5.0V luminous, curve 2 is voltage and brightness relationship curve, and high-high brightness is 88cd/m
2, show that device has the good characteristics of luminescence.
Embodiment 2
Selecting purity is 99.9% powder, by CdO and Al
2o
3powder according to mol ratio be 0.99:0.01 after even mixing, at 1300 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-5pa, the working gas flow of argon gas is 10sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 250 DEG C, and laser energy is 300W.Sputter obtains CdO:0.01Al
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 16 Ω/, surface work function tester records surface work function 6.1eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 88% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 3
Selecting purity is 99.9% powder, by CdO and Al
2o
3powder according to mol ratio be 0.92:0.08 after even mixing, at 900 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-3pa, the working gas flow of argon gas is 40sccm, and pressure is adjusted to 30Pa, and underlayer temperature is 750 DEG C, and laser energy is 80W.Sputter obtains CdO:0.08Al
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 38 Ω/, surface work function tester records surface work function 5.7eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 94% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 4
Selecting purity is 99.9% powder, by CdO and Ga
2o
3powder according to mol ratio be 0.96:0.04 after even mixing, at 1250 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump
-4pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 10Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W.Sputter obtains CdO:0.04Ga
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 12 Ω/, surface work function tester records surface work function 6.2eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 91% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 5
Selecting purity is 99.9% powder, by CdO and Ga
2o
3powder according to mol ratio be 0.99:0.01 after even mixing, at 1300 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-5pa, the working gas flow of argon gas is 10sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 250 DEG C, and laser energy is 300W.Sputter obtains CdO:0.01Ga
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 16 Ω/, surface work function tester records surface work function 5.2eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 88% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 6
Selecting purity is 99.9% powder, by CdO and Ga
2o
3powder according to mol ratio be 0.92:0.08 after even mixing, at 900 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-3pa, the working gas flow of argon gas is 40sccm, and pressure is adjusted to 30Pa, and underlayer temperature is 750 DEG C, and laser energy is 80W.Sputter obtains CdO:0.08Ga
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 38 Ω/, surface work function tester records surface work function 5.1eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 94% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 7
Selecting purity is 99.9% powder, by CdO and In
2o
3powder according to mol ratio be 0.96:0.04 after even mixing, at 1250 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump
-4pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 10Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W.Sputter obtains CdO:0.04In
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 12 Ω/, surface work function tester records surface work function 6.1eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 91% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 8
Selecting purity is 99.9% powder, by CdO and In
2o
3powder according to mol ratio be 0.99:0.01 after even mixing, at 1300 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-5pa, the working gas flow of argon gas is 10sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 250 DEG C, and laser energy is 300W.Sputter obtains CdO:0.01In
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 16 Ω/, surface work function tester records surface work function 6.1eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 88% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 9
Selecting purity is 99.9% powder, by CdO and In
2o
3powder according to mol ratio be 0.92:0.08 after even mixing, at 900 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-3pa, the working gas flow of argon gas is 40sccm, and pressure is adjusted to 30Pa, and underlayer temperature is 750 DEG C, and laser energy is 80W.Sputter obtains CdO:0.08In
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 38 Ω/, surface work function tester records surface work function 5.9eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 94% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 10
Selecting purity is 99.9% powder, by CdO, and In
2o
3and Al
2o
3powder is that 0.92:0.04:0.04 is after even mixing according to mol ratio, at 1250 DEG C, sintering diameter into is 50mm, the ceramic target that thickness is 2mm, then, successively, by acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 60mm.The vacuum tightness of cavity is extracted into 5.0 × 10 with mechanical pump and molecular pump
-4pa, the working gas flow of argon gas is 20sccm, and pressure is adjusted to 10Pa, and underlayer temperature is 500 DEG C, and laser energy is 150W.Sputter obtains CdO:0.04In
3+, 0.04Al
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 12 Ω/, surface work function tester records surface work function 5.5eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 91% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 11
Selecting purity is 99.9% powder, by CdO, and Ga
2o
3and Al
2o
3powder is that 0.91:0.04:0.05 is after even mixing according to mol ratio, at 1300 DEG C, sintering diameter into is 50mm, the ceramic target that thickness is 2mm, then, successively, by acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, put into vacuum cavity.The distance of target and substrate is set as to 45mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-5pa, the working gas flow of argon gas is 10sccm, and pressure is adjusted to 3Pa, and underlayer temperature is 250 DEG C, and laser energy is 300W.Sputter obtains CdO:0.04Ga
3+, 0.05Al
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 18 Ω/, surface work function tester records surface work function 6.1eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 88% at visible ray 470～790nm wavelength region average transmittances.
Embodiment 12
Selecting purity is 99.9% powder, by CdO, and Ga
2o
3and In
2o
3powder according to mol ratio be 0.94:0.03:0.03 after even mixing, at 900 DEG C, sintering diameter into is 50mm, then the ceramic target that thickness is 2mm, successively uses acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass substrate, puts into vacuum cavity.The distance of target and substrate is set as to 95mm.The vacuum tightness of cavity is extracted into 1.0 × 10 with mechanical pump and molecular pump
-3pa, the working gas flow of argon gas is 40sccm, and pressure is adjusted to 30Pa, and underlayer temperature is 750 DEG C, and laser energy is 80W.Sputter obtains CdO:0.03In
3+, 0.03Ga
3+transparent conductive film.
Test result: adopt four point probe resistance meter to record square resistance 38 Ω/, surface work function tester records surface work function 5.4eV.
The test of use ultraviolet-visible pectrophotometer, test wavelength is 300～900nm.Film has reached 92% at visible ray 470～790nm wavelength region average transmittances.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (9)
1. an electro-conductive material, is characterized in that: its chemical formula is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
2. a preparation method for electro-conductive material, is characterized in that, comprises the following steps: according to CdO:xMe
3+the stoichiometric ratio of each element takes CdO and Me
2o
3powder also mixes, and wherein, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element; And
The powder mixing sintering at 900 DEG C～1300 DEG C is obtained to chemical formula for 0.5 hour～5 hours is CdO:xMe
3+electro-conductive material.
3. a conductive film, is characterized in that, the chemical formula of this conductive film material is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
4. conductive film according to claim 3, is characterized in that, described conductive film is the conductive film of nano thread structure, and described nanowire diameter is 60nm～450nm.
5. a preparation method for conductive film, is characterized in that, comprises the following steps:
According to CdO:xMe
3+the stoichiometric ratio of each element takes CdO and Me
2o
3powder also mixes and obtains target, and wherein, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element;
The powder mixing sintering at 900 DEG C～1300 DEG C is obtained to chemical formula for 0.5 hour～5 hours is CdO:xMe
3+target;
The vacuum cavity that described target and substrate is packed into magnetic-controlled sputtering coating equipment, wherein, the vacuum tightness of vacuum cavity is 1.0 × 10
-3pa～1.0 × 10
-5pa;
Adjusting magnetron sputtering plating processing parameter is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C; And
Peel off described substrate, obtain described conductive film.
6. a substrate for organic electroluminescence device, is characterized in that, comprises the substrate and the conductive membrane layer that stack gradually, and wherein the chemical formula of conductive film layer material is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
7. the substrate of organic electroluminescence device according to claim 6, is characterized in that, the conductive film in described substrate is the conductive film of nano thread structure, and described nanowire diameter is 60nm～450nm.
8. a preparation method for the substrate of organic electroluminescence device, is characterized in that, comprises the following steps:
According to CdO:xMe
3+the stoichiometric ratio of each element takes CdO and Me
2o
3powder also mixes and obtains target, and wherein, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element;
The powder mixing sintering at 900 DEG C～1300 DEG C is obtained to chemical formula for 0.5 hour～5 hours is CdO:xMe
3+target;
The vacuum cavity that described target and substrate is packed into magnetic-controlled sputtering coating equipment, wherein, the vacuum tightness of vacuum cavity is 1.0 × 10
-3pa～1.0 × 10
-5pa;
Adjusting magnetron sputtering plating processing parameter is: base target spacing is 45mm～95mm, and the energy of laser is 80W～300W, and pressure is 3Pa～30Pa, passes into rare gas element, and the flow of rare gas element is 10sccm～40sccm, and underlayer temperature is 250 DEG C～750 DEG C.
9. an organic electroluminescence device, comprises the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that, described anode is conductive film, and the chemical formula of this conductive film material is CdO:xMe
3+, x is that 0～0.08, Me is selected from aluminum ion, at least one in gallium element and phosphide element.
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| CN201310193102.5A CN104178729A (en) | 2013-05-22 | 2013-05-22 | Conductive film, and preparation method and application thereof |
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|---|---|---|---|
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Family
ID=51960066
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021805A (en) * | 2011-09-22 | 2013-04-03 | 台湾积体电路制造股份有限公司 | Method and system for forming chalcogenide semiconductor materials using sputtering and evaporation functions |
| CN103963367A (en) * | 2013-01-30 | 2014-08-06 | 海洋王照明科技股份有限公司 | Conductive film, and making method and application thereof |
-
2013
- 2013-05-22 CN CN201310193102.5A patent/CN104178729A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021805A (en) * | 2011-09-22 | 2013-04-03 | 台湾积体电路制造股份有限公司 | Method and system for forming chalcogenide semiconductor materials using sputtering and evaporation functions |
| CN103963367A (en) * | 2013-01-30 | 2014-08-06 | 海洋王照明科技股份有限公司 | Conductive film, and making method and application thereof |
Non-Patent Citations (3)
| Title |
|---|
| B. SAHA: "Electrical and optical properties of Al doped cadmium oxide thin films deposited by radio frequency magnetron sputtering", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 * |
| R.K. GUPTA: "Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films", 《APPLIED SURFACE SCIENCE》 * |
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Application publication date: 20141203 |