CN104167993A - Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted - Google Patents
Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted Download PDFInfo
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- CN104167993A CN104167993A CN201410431317.0A CN201410431317A CN104167993A CN 104167993 A CN104167993 A CN 104167993A CN 201410431317 A CN201410431317 A CN 201410431317A CN 104167993 A CN104167993 A CN 104167993A
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Abstract
The invention provides a differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted. The differential low-power consumption and low noise amplifier comprises a main common grid amplifier stage (1), an active transconductance enhanced amplifier stage (2), a balance and non-balance transformer (3) and a load resistor (4). The active transconductance enhancement and main common grid amplifier stage cascading mode is adopted, the transconductance of a main common grid amplifier tube is enhanced, in addition, the transconductance enhancement technology is adopted in the active transconductance enhanced amplifier tube, and the high equivalent transconductance is achieved with low power consumption. When a first stage amplifying circuit and a second stage amplifying circuit have the same gain, the noise contribution of the main common grid amplifying stage can be restrained. The circuits have a higher interference capacity to the environment noise through a difference structure. The low noise coefficient and the low power consumption are achieved through the combination of the secondary transconductance enhancement and the noise counteraction technology.
Description
Technical field
The present invention relates to a kind of difference low-power consumption low noise amplifier that adopts active mutual conductance enhancing and noise cancellation technique, there is the feature of low-noise factor low-power consumption, belong to technical field of radio frequency integrated circuits.
Background technology
Low noise amplifier is the key modules of receiver in wireless transmitting system, and its Main Function is to keep under low noise condition, and the small-signal that amplifying antenna is received from air interface is also transferred to rear class.Due in radio frequency reception foremost, low noise amplifier has material impact for whole receiver performance.Input/output port coupling, noise factor is low, enough gains, suitable power consumption and the linearity are the basic demands of low noise amplifier design.
Traditional low noise amplifier generally adopts source inductance feedback technique, but needs on-chip inductor, occupies too large area.Although traditional cathode-input amplifier can be easy to realize Input matching and lower power consumption, noise factor is larger.In recent years, noninductive low noise amplifier starts to occur.They generally can be divided into two classes: the first kind is the common-source amplifier with resistance feedback or active feedback, and Equations of The Second Kind is the cathode-input amplifier in conjunction with mutual conductance enhancing or noise cancellation.But these structures have certain compromise to choose in the performances such as gain, noise, the linearity, power consumption.
Cathode-input amplifier is because provide the voltage gain less than shunt feedback amplifier, so the linearity is relatively good.And cathode-input amplifier can effectively utilize grid to bring in to realize mutual conductance enhancing technology.Fig. 1, list of references [1] (Sanghyun Woo, Woonyun Kim Chang-Ho Lee, Kyutae Lim, Joy Laskar,-A 3.6mW differential common-gate CMOS LNA with positive-negative feedback, ‖ ISSCC 2009/SESSION 12/RF BUILDING BLOCKS/12.2.) this mutual conductance strengthens structure and is often used to reduce power consumption.
Although the linearity of cathode-input amplifier is better, noiseproof feature is poorer than adopting the amplifier of parallel feedback.So adopt cathode-input amplifier structure also will overcome the problem of noise penalty.Fig. 2, list of references [2] (Chih-Fan Liao, Shen-Iuan Liu,-A Broadband Noise-Canceling CMOS LNA for 3.1 – 10.6-GHz UWB Receivers, ‖ IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL.42, NO.2, FEBRUARY 2007.) the cathode-input amplifier structure that provides a kind of noise to eliminate, can effectively reduce the noise of cathode-input amplifier.
In order to overcome the performance shortcomings of low noise amplifier, a kind of broadband has been suggested without the low noise amplifier of inductance low-power consumption.Fig. 3, list of references [3] (Hongrui Wang, Li Zhang, and Zhiping Yu,-A Wideband Inductorless LNA With Local Feedback and Noise Cancelling for Low-Power Low-Voltage Applications, ‖ IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-I:REGULAR PAPERS, VOL.57, NO.8, AUGUST 2010.) it adopts mutual conductance enhancing and noise cancellation technique to reach low-power consumption, low noise target simultaneously.But it is not what adopt in literary composition is single-end circuit, strong for the antijamming capability of ambient noise.
Summary of the invention
The object of the invention is to provide a kind of difference low-power consumption low noise amplifier that adopts active mutual conductance enhancing and noise cancellation technique, solves the existing low-power consumption problem that noise factor is higher, power consumption is large of grid low noise amplifier altogether.Amplifier of the present invention adopts differential configuration to make circuit have stronger interference performance to ambient noise, by the combination of the enhancing of mutual conductance secondary and noise cancellation technique, has realized the performance of low-noise factor and low-power consumption.This design can be used in radio frequency transceiver CMOS integrated circuit.
For this reason, the invention provides following technical scheme:
Technical solution of the present invention: a kind of difference low-power consumption low noise amplifier that adopts active mutual conductance enhancing and noise cancellation technique, it comprises amplifying stage 2, balance/unbalance transformer 3 and load impedance 4 that main grid amplifying stage 1 altogether, active mutual conductance strengthen; Input signal enters from the input port of balance/unbalance transformer 3, source and the main source direct-coupling of grid amplifying stage 1 altogether of the amplifying stage 2 that its difference output port had both strengthened with active mutual conductance, be also capacitively coupled to the grid end of the amplifying stage 2 that active mutual conductance strengthens; The amplifying stage 2 that active mutual conductance strengthens adopts the symmetrical structure of NMOS and PMOS, and NMOS structure has adopted cascode form; The drain terminal of the amplifying stage 2 that active mutual conductance strengthens is by being capacitively coupled to the main grid of grid amplifying stage 1 altogether; Load impedance 4 joins with the drain electrode of the cascode pipe of the amplifying stage 2 of main grid amplifying stage 1 altogether and active mutual conductance enhancing; The output of circuit is positioned at the main drain electrode of grid amplifying stage 1 altogether.
Wherein, main two identical N-type transistor NM1 of grid amplifying stage 1 use altogether and NM5 are as input amplifier tube, the grid end of NM1 and NM5 is received bias voltage by large resistance respectively, the two ends of capacitor C 1 connect respectively the grid of NM1, the drain electrode of NM2 and PM4 and the source class of NM3, the two ends of capacitor C 2 connect respectively the grid of input positive signal and PM4, the two ends of capacitor C 3 connect respectively the grid of input positive signal and NM2, the amplifying stage 2 that active mutual conductance strengthens adopts N-type transistor NM2 and P transistor npn npn PM4 as input amplifier tube, the positive signal of differential signal is capacitively coupled to the grid end of NM2 and PM4, the negative signal of differential signal is directly connected to the source of NM2, the source termination power of PM4, on NM2, add the N-type transistor NM3 of cascade (cascode) structure simultaneously, NM3 source connects the drain terminal of NM2 and PM4, grid end connects bias voltage by large resistance, drain terminal meets load resistance Z1 and Z3, the grid end of PM4 and NM2 connects bias voltage by large resistance respectively, 1. the single-ended input of balance/unbalance transformer 3 is connected to signal source, 3. balance output end is directly coupled to the source class of NM1 and the source class of NM6 and is capacitively coupled to NM2 and the grid of PM4,4. another balance output end is directly coupled to the source class of NM2 and the source class of NM5 and is capacitively coupled to NM6 and the grid end of PM8,5. ground connection of the 2nd end the 2. with 5th end, load impedance 4 is made up of impedance Z 1, Z2, Z3 and Z4, and the drain electrode of power supply and NM3 is received respectively at the two ends of Z1, and the two ends of Z2 connect respectively the drain electrode of NM1 and the drain electrode of NM3.
The present invention's advantage is compared with prior art:
1. adopt differential configuration to have superiority for the impact of eliminating ghost effect than single-ended structure, make circuit have stronger antijamming capability to ambient noise;
2. the method that adopts active mutual conductance to strengthen is carried out secondary enhancing to the mutual conductance of main cathode-input amplifier, and active mutual conductance reinforced pipe is also adopted to mutual conductance enhancing technology, by the larger equivalent transconductance of low-power consumption realization, has reduced circuit power consumption;
3. can substantially eliminate the main noise of grid amplifier tube altogether through the resistance of reasonably each load of design, improve the noiseproof feature of whole circuit.
4. adopt cascade (cascode) structure, strengthened reverse isolation degree.If do not adopt cascode structure, do not affect for noise, but power consumption just can continue to reduce.
5. the present invention's various indexs of compromising, have improved power consumption in order to reduce noise.But reach the performance of low noise and high-isolation than the circuit structure having existed.
Brief description of the drawings
Fig. 1 is the low noise amplifier that existing employing mutual conductance strengthens;
Fig. 2 is existing a kind of common grid low noise amplifier that adopts noise to eliminate structure;
Fig. 3 is existing a kind of low-power consumption low noise amplifier that adopts mutual conductance enhancing and noise to eliminate;
Fig. 4 is the difference low-power consumption low noise amplifier that adopts active mutual conductance enhancing and noise cancellation technique in the present invention;
Fig. 5 be in the present invention amplifier with the simulation comparison figure of the noise factor (NF) of frequency change and the noise factor of already present cathode-input amplifier;
Fig. 6 be in the present invention amplifier with voltage gain (S21) analogous diagram of frequency change;
Fig. 7 be in the present invention amplifier with scattering coefficient (S11) analogous diagram of frequency change.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment and only be not used in and limit the scope of the invention for the present invention is described.After having read the present invention, those skilled in the art all fall within the application's claims limited range to the amendment of the various equivalent form of values of the present invention.
As shown in Figure 4: main two identical N-type transistor NM1 of grid amplifying stage 1 use altogether and NM5 are as input amplifier tube, the grid end of NM1 and NM5 is received bias voltage by large resistance respectively, the two ends of capacitor C 1 connect respectively the drain electrode of grid, NM2 and PM4 and the source class of NM3 of NM1, the two ends of capacitor C 2 connect respectively the grid of input positive signal and PM4, and the two ends of capacitor C 3 connect respectively the grid of input positive signal and NM2.The amplifying stage 2 that active mutual conductance strengthens adopts N-type transistor NM2 and P transistor npn npn PM4 as input amplifier tube, the positive signal of differential signal is directly coupled to the grid end of NM2 and PM4 by electric capacity, the negative signal of differential signal is directly connected to the source of NM2, the source termination power of PM4.On NM2, add the N-type transistor NM3 of cascade (cascode) structure simultaneously.NM3 source connects the drain terminal of NM2 and PM4, and grid end connects bias voltage by large resistance, and drain terminal meets load resistance Z1 and Z3.The grid end of PM4 and NM2 connects bias voltage by large resistance respectively; 1. the single-ended input of balance/unbalance transformer 3 is connected to signal source, 3. balance output end is directly coupled to the source class of NM1 and the source class of NM6 and is capacitively coupled to NM2 and the grid of PM4,4. balance output end is directly coupled to the source class of NM2 and the source class of NM5 and is capacitively coupled to NM6 and the grid end of PM8,5. ground connection of the 2nd end the 2. with 5th end; Load impedance 4 is made up of impedance Z 1, Z2, Z3 and Z4, adopts resistance as load impedance in the present invention.The drain electrode of power supply and NM3 is received respectively at the two ends of Z1, and the two ends of Z2 connect respectively the drain electrode of NM1 and the drain electrode of NM3.
Can see structure of the present invention by accompanying drawing 5-7 and can reach good coupling in gain three dB bandwidth, noise factor can be low to moderate 3dB, can find out advantage from comparison diagram.And the power consumption consuming under the condition that is 1V at supply power voltage only has 3.5mW.
Claims (2)
1. one kind adopts the difference low-power consumption low noise amplifier of active mutual conductance enhancing and noise cancellation technique, it is characterized in that, comprise amplifying stage (2), balance/unbalance transformer (3) and load impedance (4) that main grid amplifying stage (1) altogether, active mutual conductance strengthen; Input signal enters from the input port of balance/unbalance transformer (3), source and the main source direct-coupling of grid amplifying stage (1) altogether of the amplifying stage (2) that its difference output port had both strengthened with active mutual conductance, be also capacitively coupled to the grid end of the amplifying stage (2) that active mutual conductance strengthens; The amplifying stage (2) that active mutual conductance strengthens adopts the symmetrical structure of NMOS and PMOS, and NMOS structure has adopted cascode form; The drain terminal of the amplifying stage (2) that active mutual conductance strengthens is by being capacitively coupled to the main grid of grid amplifying stage (1) altogether; Load impedance (4) joins with the drain electrode of the cascode pipe of the amplifying stage (2) of main grid amplifying stage (1) altogether and active mutual conductance enhancing; The output of circuit is positioned at the main drain electrode of grid amplifying stage (1) altogether.
2. a kind of difference low-power consumption low noise amplifier that adopts active mutual conductance enhancing and noise cancellation technique according to claim 1, it is characterized in that, lead two identical N-type transistor NM1 of common grid amplifying stage (1) and NM5 as input amplifier tube, the grid end of NM1 and NM5 is received bias voltage by large resistance respectively, the two ends of capacitor C 1 connect respectively the grid of NM1, the drain electrode of NM2 and PM4 and the source class of NM3, the two ends of capacitor C 2 connect respectively the grid of input positive signal and PM4, the two ends of capacitor C 3 connect respectively the grid of input positive signal and NM2, the amplifying stage (2) that active mutual conductance strengthens adopts N-type transistor NM2 and P transistor npn npn PM4 as input amplifier tube, the positive signal of differential signal is capacitively coupled to the grid end of NM2 and PM4, the negative signal of differential signal is directly connected to the source of NM2, the source termination power of PM4, on NM2, add the N-type transistor NM3 of cascade (cascode) structure simultaneously, NM3 source connects the drain terminal of NM2 and PM4, grid end connects bias voltage by large resistance, drain terminal meets load resistance Z1 and Z3, the grid end of PM4 and NM2 connects bias voltage by large resistance respectively, the single-ended input (1.) of balance/unbalance transformer (3) is connected to signal source, balance output end (3.) is directly coupled to the source class of NM1 and the source class of NM6 and is capacitively coupled to NM2 and the grid of PM4, another balance output end (4.) is directly coupled to the source class of NM2 and the source class of NM5 and is capacitively coupled to NM6 and the grid end of PM8, the 2nd end (2.) and the 5th end (5.) ground connection, load impedance (4) is made up of impedance Z 1, Z2, Z3 and Z4, and the drain electrode of power supply and NM3 is received respectively at the two ends of Z1, and the two ends of Z2 connect respectively the drain electrode of NM1 and the drain electrode of NM3.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849876A (en) * | 2017-02-09 | 2017-06-13 | 中国科学技术大学 | A kind of use multiple feedback mutual conductance enhancing and the low-power consumption wide band radio-frequency frequency mixer of common-mode feedback active load |
| CN107222227A (en) * | 2017-06-28 | 2017-09-29 | 中国科学技术大学 | A kind of receiver rf front-end with digital assistant circuit |
| CN107231129A (en) * | 2017-05-12 | 2017-10-03 | 成都通量科技有限公司 | Harmonic controling CMOS frequency mixers based on transformer device structure |
| CN108352815A (en) * | 2015-10-29 | 2018-07-31 | 三菱电机株式会社 | Trsanscondutance amplifier and phase shifter |
| CN109379051A (en) * | 2018-09-17 | 2019-02-22 | 南京邮电大学 | A kind of wideband low noise amplifier of double mode high-gain, low noise |
| CN111030614A (en) * | 2019-12-11 | 2020-04-17 | 电子科技大学 | Transconductance enhancement type millimeter wave low noise amplifier |
| CN111478671A (en) * | 2020-04-13 | 2020-07-31 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN112653397A (en) * | 2020-12-11 | 2021-04-13 | 电子科技大学 | Broadband transconductance enhanced low-noise amplifier |
| CN113595506A (en) * | 2021-07-29 | 2021-11-02 | 西安邮电大学 | Active mixer based on noise cancellation |
| CN115483893A (en) * | 2022-09-02 | 2022-12-16 | 电子科技大学 | Low-temperature low-noise amplifier circuit without inductor, chip and radio frequency front-end circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102638227A (en) * | 2012-04-23 | 2012-08-15 | 中国科学院微电子研究所 | Ultra-wideband mixer circuit with on-chip active balun |
| CN103219951A (en) * | 2013-03-22 | 2013-07-24 | 中国科学技术大学 | Low-power consumption and low-noise amplifier adopting noise cancellation technology |
-
2014
- 2014-08-28 CN CN201410431317.0A patent/CN104167993B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102638227A (en) * | 2012-04-23 | 2012-08-15 | 中国科学院微电子研究所 | Ultra-wideband mixer circuit with on-chip active balun |
| CN103219951A (en) * | 2013-03-22 | 2013-07-24 | 中国科学技术大学 | Low-power consumption and low-noise amplifier adopting noise cancellation technology |
Non-Patent Citations (1)
| Title |
|---|
| 蔡力等: "An energy detection receiver for non-coherent IR-UWB", 《半导体学报》 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108352815A (en) * | 2015-10-29 | 2018-07-31 | 三菱电机株式会社 | Trsanscondutance amplifier and phase shifter |
| CN108352815B (en) * | 2015-10-29 | 2022-03-25 | 三菱电机株式会社 | Transconductance amplifier and phase shifter |
| CN106849876B (en) * | 2017-02-09 | 2019-10-25 | 中国科学技术大学 | A kind of low-power consumption wide band radio-frequency frequency mixer |
| CN106849876A (en) * | 2017-02-09 | 2017-06-13 | 中国科学技术大学 | A kind of use multiple feedback mutual conductance enhancing and the low-power consumption wide band radio-frequency frequency mixer of common-mode feedback active load |
| CN107231129A (en) * | 2017-05-12 | 2017-10-03 | 成都通量科技有限公司 | Harmonic controling CMOS frequency mixers based on transformer device structure |
| CN107222227B (en) * | 2017-06-28 | 2019-04-26 | 中国科学技术大学 | A kind of receiver rf front-end with digital assistant circuit |
| CN107222227A (en) * | 2017-06-28 | 2017-09-29 | 中国科学技术大学 | A kind of receiver rf front-end with digital assistant circuit |
| CN109379051A (en) * | 2018-09-17 | 2019-02-22 | 南京邮电大学 | A kind of wideband low noise amplifier of double mode high-gain, low noise |
| CN111030614A (en) * | 2019-12-11 | 2020-04-17 | 电子科技大学 | Transconductance enhancement type millimeter wave low noise amplifier |
| CN111030614B (en) * | 2019-12-11 | 2023-10-27 | 电子科技大学 | Transconductance enhanced millimeter wave low-noise amplifier |
| CN111478671A (en) * | 2020-04-13 | 2020-07-31 | 电子科技大学 | Novel low-noise amplifier applied to Sub-GHz frequency band |
| CN112653397A (en) * | 2020-12-11 | 2021-04-13 | 电子科技大学 | Broadband transconductance enhanced low-noise amplifier |
| CN113595506A (en) * | 2021-07-29 | 2021-11-02 | 西安邮电大学 | Active mixer based on noise cancellation |
| CN113595506B (en) * | 2021-07-29 | 2023-11-17 | 西安邮电大学 | Active mixer based on noise cancellation |
| CN115483893A (en) * | 2022-09-02 | 2022-12-16 | 电子科技大学 | Low-temperature low-noise amplifier circuit without inductor, chip and radio frequency front-end circuit |
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