CN104167172A

CN104167172A - Wide-color-gamut high-brightness evenness OLED pixel array

Info

Publication number: CN104167172A
Application number: CN201410373185.0A
Authority: CN
Inventors: 向欣; 任海; 禹浩荣
Original assignee: Sichuan CCO Display Technology Co Ltd
Current assignee: Sichuan CCO Display Technology Co Ltd
Priority date: 2014-07-31
Filing date: 2014-07-31
Publication date: 2014-11-26

Abstract

The invention discloses a wide-color-gamut high-brightness evenness OLED pixel array. Each pixel of an OLED component is composed of a sub-pixel R, a sub-pixel G, a sub-pixel B and a sub-pixel Y, wherein the four sub-pixels are not arranged in order. A driving IC is used for driving all the sub-pixels to control the chromaticity output of pixels. A white light-emitting pixel W is distributed among every four sub-pixels which are the sub-pixel R, the sub-pixel G, the sub-pixel B and the sub-pixel Y. The white light-emitting pixels W are driven and controlled by the driving IC in the image display process of the component. Each pixel is of an RGBY+W star class or annular pixel array structure. The RGBY+W star class or annular pixel array structure is adopted, the display color gamut of the OLED component can be effectively increased, besides, brightness compensation can be performed on bright unevenness which is caused by the limit of the technology in the manufacturing process of the OLED component, and the problem that due to the limit of the technology, the brightness unevenness is generated is solved.

Description

A kind of wide colour gamut high brightness homogeneity OLED pel array

Technical field

The invention belongs to OLED display technique field, particularly a kind of wide colour gamut high brightness homogeneity OLED pel array.

Background technology

OLED (Organic Light Emitting Diode Organic Light Emitting Diode) is organic electroluminescent technology, its principle of luminosity is: luminous organic material is clipped between transparent anode and metallic reflection negative electrode, and organic film is applied to voltage, under the effect of extra electric field, electronics and hole are injected to organic functional thin film from negative electrode and anode respectively, move to luminescent layer from electron supplying layer and hole transporting layer respectively in injected electrons and hole, in luminescent layer, be compounded to form exciton, exciton radiation transistion produces photon, complete luminescence process, both can also can be used as lighting engineering as display technique.

OLED, as a kind of novel semiconductor display technique, yields unusually brilliant results at small-medium size mobile device and large scale demonstration field recently.In flat panel display, the many merits such as organic light emitting diode display (OLED) is frivolous with it, active illuminating, fast-response speed, wide viewing angle, rich color and high brightness, low-power consumption, high-low temperature resistant and to be known as by industry be the third generation display technique after liquid crystal display (LCD).By type of drive, OLED is divided into passive organic light-emitting diode (PMOLED, also referred to as passive matrix OLED) and active organic light-emitting diode (AMOLED, also referred to as active matrix OLED).Wherein AMOLED drives by integrated thin-film transistor (TFT) and capacitor in each pixel and by the method that capacitor maintains voltage.AMOLED can realize large scale, resolution panels, is the emphasis of current research and the developing direction of following display technique, but is difficult to technically realize the driving method that deterioration in image quality is controlled, and needs higher cost.

OLED is as display device of new generation, and various in theory parameters are all far superior to LCD, but in actual production, is subject to the restriction of organic material and manufacturing process, and the display effect of OLED there is no clear superiority compared to LCD.Based on this kind of realistic situation, we need to make innovation in the design of device dot structure, make up the deficiency on manufacturing process, to promote the display effect of OLED.What OLED pixel planes structure adopted at present is the bar shaped array of RGB, and this is also the general pel array pattern of flat-panel display device.But use this scheme cannot bring into play the color advantage of OLED, the shortcoming of its display brightness lack of homogeneity also cannot overcome.

Summary of the invention

The object of the invention is to overcome the deficiencies in the prior art, star-like or the annular picture element array structure of a kind of RGBY+W of employing is provided, not only can effectively increase the demonstration colour gamut of OLED device, and the unevenness of the brightness that can cause because of technology restriction OLED device carries out luminance compensation, overcome the wide colour gamut high brightness homogeneity OLED pel array of the problem of the brightness irregularities of bringing because of process technology limit in manufacture process.

The object of the invention is to be achieved through the following technical solutions: a kind of wide colour gamut high brightness homogeneity OLED pel array, by four, sub-pixel R, G, B, the Y of order form each single pixel of OLED device in no particular order, centre position at four sub-pixel R, G, B, Y is distributed with white luminous pixel W, and each single pixel adopts the star-like or annular picture element array structure of RGBY+W.

Further, described white luminous pixel W is not as the output of picture imaging signal, but as the rectification pixel of OLED device display brightness, its function is that the unevenness of brightness that OLED device is caused because of technology restriction in manufacture process is carried out luminance compensation.

Further, described four sub-pixel R, G, B, Y and white luminous pixel W are connected with drive IC respectively, and drive IC drives to control the colourity output of single pixel to each sub-pixel.

Further, four described sons are identical as the shape of R, G, B, Y, are respectively rhombus, rectangle or strip.

Further, described white luminous pixel W's is shaped as square, circle or rhombus.

The invention has the beneficial effects as follows: the star-like or annular picture element array structure that adopts RGBY+W, overcome traditional RGB bar shaped array and cannot bring into play color advantage and the poor shortcoming of brightness uniformity of OLED, not only can effectively increase the demonstration colour gamut of OLED device, and adopt white luminous pixel W as the rectification pixel of OLED device display brightness, the unevenness of the brightness that can cause because of technology restriction in manufacture process OLED device is carried out luminance compensation, has overcome the problem of the brightness irregularities of bringing because of process technology limit.

Accompanying drawing explanation

Fig. 1 is pel array schematic diagram of the present invention;

Fig. 2 is OLED device brightness homogeneity correction process flow diagram.

Embodiment

Below in conjunction with accompanying drawing, further illustrate technical scheme of the present invention, but the content that the present invention protects is not limited to the following stated.

As shown in Figure 1, a kind of wide colour gamut high brightness homogeneity OLED pel array, a kind of wide colour gamut high brightness homogeneity OLED pel array, by four, sub-pixel R, G, B, the Y of order form each single pixel of OLED device in no particular order, centre position at four sub-pixel R, G, B, Y is distributed with white luminous pixel W, and each single pixel adopts the star-like or annular picture element array structure of RGBY+W.

The method to set up of wide colour gamut high brightness homogeneity OLED pel array of the present invention is: after four color pixels (R, G, B, Y) of OLED device complete, manufacture these four sub-pixels of requirements set form star-like or loop configuration as the array structure of single pixel according to technique.White pixel W is as the rectification pixel of OLED device display brightness, the luminous intensity of its each pixel is foundation by take the concrete display performance of the OLED device that this batch of production completes, by process engineer, according to the detection case of this batch of OLED device display effect, the driving parameter of the white pixel W of zones of different is set the order ground regulating to reach brightness uniformity.

As shown in Figure 2, adopt the OLED device brightness homogeneity correction flow process of pel array of the present invention to comprise the following steps:

S1: selecting this batch needs the OLED device detecting;

S2: the OLED device that needs are detected carries out brightness uniformity detection, detects first while surveying and only drives R, G, B, Y to light;

S3: according to the testing result of step S2, the driving parameter of the white pixel W of zones of different is set;

S4: again detect the brightness uniformity of OLED device, the driving parameter of each white pixel W is not adjusted if reach technological requirement;

S5: finish to proofread and correct.

Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.

Claims

1. one kind wide colour gamut high brightness homogeneity OLED pel array, it is characterized in that: by four, sub-pixel R, G, B, the Y of order form each single pixel of OLED device in no particular order, centre position at four sub-pixel R, G, B, Y is distributed with white luminous pixel W, and each single pixel adopts the star-like or annular picture element array structure of RGBY+W.

2. according to a kind of wide colour gamut high brightness homogeneity OLED pel array described in claims 1, it is characterized in that: described white luminous pixel W is not as the output of picture imaging signal, but as the rectification pixel of OLED device display brightness, its function is that the unevenness of brightness that OLED device is caused because of technology restriction in manufacture process is carried out luminance compensation.

3. according to a kind of wide colour gamut high brightness homogeneity OLED pel array described in claims 1, it is characterized in that: described four sub-pixel R, G, B, Y and white luminous pixel W are connected with drive IC respectively, drive IC drives to control the colourity output of single pixel to each sub-pixel.

4. according to a kind of wide colour gamut high brightness homogeneity OLED pel array described in claims 1, it is characterized in that: four described sons are identical as the shape of R, G, B, Y, are respectively rhombus, rectangle or strip.

5. according to a kind of wide colour gamut high brightness homogeneity OLED pel array described in claims 1, it is characterized in that: being shaped as of described white luminous pixel W is square, circle or rhombus.