CN104157732B - 一种太阳能电池扩散工艺 - Google Patents
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
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Abstract
本发明公开了一种太阳能电池扩散工艺,依次包括以下步骤:将硅片放置在扩散炉中,在800℃以下以300-600sccm的速率通入氧气8-20min;用5-20min将炉内温度升至830-840℃,整个升温过程中持续通入流量比为1:5~1:7的氧气和氮气;保持炉内温度为830-840℃,继续通入流量比为1:5~1:7的氧气和氮气5-20min;保持炉内温度为830-840℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。本发明步骤2和3中的氧气和氮气的比例为1:5-1:7,能解决扩散方阻中间点偏高的问题,有效改善方阻的均匀性。
Description
技术领域
本发明涉及太阳能电池制造领域,具体涉及一种太阳能电池扩散工艺。
背景技术
随着高科技产业带动光伏产业的快速发展,太阳能电池的制造技术越来越成熟,新技术与新的工艺方法不断应运而出,制作高方阻已是技术革新的方向,但是随着扩散方阻的提高,方阻均匀性会相应变差,不均匀度越来越大,影响了工艺的稳定控制同时也影响后续烧结的效果。现有的制造高方阻电池的工艺较阐述不合理,扩散后的硅片均匀性较差。
发明内容
本发明的目的在于提供一种太阳能电池扩散工艺,制作90Ω/sq高方阻,操作简洁方便,能有效改善扩散方阻的均匀性。
本发明通过以下技术方案实现:
一种太阳能电池扩散工艺,依次包括以下步骤:
1)扩散前氧化:将硅片放置在扩散炉中,在800℃以下以300-600sccm的速率通入氧气8-20min;
2)升温扩散:用5-20min将炉内温度升至830-840℃,整个升温过程中持续通入流量比为1:5~1:7的氧气和氮气;
3)恒温扩散:保持炉内温度为830-840℃,继续通入流量比为1:5~1:7的氧气和氮气5-20min;
4)降温出炉:保持炉内温度为830-840℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。
本发明进一步的改进方案是,步骤2以及步骤3中通入的氧气为100-160sccm、氮气为700-840sccm,时间均为8-12min。
本发明与现有技术相比具有以下优点:
本发明步骤2和3中的氧气和氮气的比例为1:5-1:7,能解决扩散方阻中间点偏高的问题,有效改善方阻的均匀性。
具体实施方式:
下面选取制绒后的硅片各500片,用现有工艺和本发明的工艺分别扩散:
现有工艺对比例1
将硅片放置在扩散炉中,在800℃以下以600sccm的速率通入氧气20min;用5min将炉内温度升至830℃,整个升温过程中持续通入流量比为1:2的氧气和氮气;保持炉内温度为830℃,继续通入流量比为1:2的氧气和氮气20min;保持炉内温度为820-830℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。
实施例1
一种太阳能电池扩散工艺,包括以下步骤:
1)扩散前氧化:将硅片放置在扩散炉中,在800℃以下以600sccm的速率通入氧气20min;
2)升温扩散:用12min将炉内温度升至840℃,整个升温过程中持续通入流量比为1:7的氧气和氮气,具体的是氧气100sccm,氮气为700sccm,
3)恒温扩散:保持炉内温度为840℃,继续通入流量比为1:7的氧气和氮气12min,具体的是氧气100sccm,氮气为700sccm;
4)降温出炉:保持炉内温度为840℃时间为10min后将炉内温度降至常温并取出硅片测其方块电阻。
测得现有工艺对比例1与实施例1的对比数据如下:
从以上数据可看出,对比例1中5个温区不均匀度分别为16.5%、13.1%、6.0%、5.0%,4.9%,平均方阻为91.0Ω/sq,平均均匀度为9.10%。
实施例1中5个温区不均匀度分别为5.2%、3.7%、4.0%、5.6%、6.4%,平均方阻为89.3Ω/sq,平均均匀度4.98%,改善效果显著。
实施例2
一种太阳能电池扩散工艺,包括以下步骤:
将硅片放置在扩散炉中,在800℃以下以300sccm的速率通入氧气8min;用8min将炉内温度升至830℃,整个升温过程中持续通入流量比为1:5的氧气和氮气,具体的是氧气150sccm,氮气为750sccm;保持炉内温度为830℃,继续通入流量比为1:5的氧气和氮气8min,具体的是是氧气150sccm,氮气为750sccm;保持炉内温度为830℃时间为5min后将炉内温度降至常温并取出硅片测其方块电阻。
实施例2中5个温区不均匀度分别为8.2%、4.3%、7.6%、3.1%、5.2%,平均方阻为89.3Ω/sq,平均均匀度5.68%,与对比例1相比改善效果显著。
实施例3
一种太阳能电池扩散工艺,包括以下步骤:
将硅片放置在扩散炉中,在800℃以下以450sccm的速率通入氧气12min;
用10min将炉内温度升至830-840℃,整个升温过程中持续通入流量比为1:6的氧气和氮气,具体的是氧气120sccm,氮气为720sccm;保持炉内温度为830-840℃,继续通入流量比为1:6的氧气和氮气10min,具体的是氧气120sccm,氮气为720sccm;保持炉内温度为830-840℃时间为8min后将炉内温度降至常温并取出硅片测其方块电阻。
实施例3中5个温区不均匀度分别为7.8%、3.2%、4.6%、6.2%、2.9%,平均方阻为89.3Ω/sq,平均均匀度4.94%,与对比例1相比改善效果显著。
Claims (2)
1.一种太阳能电池扩散工艺,其特征依次包括以下步骤:
1)扩散前氧化:将硅片放置在扩散炉中,在800℃以下以300-600sccm的速率通入氧气8-20min;
2)升温扩散:用5-20min将炉内温度升至830-840℃,整个升温过程中持续通入流量比为1:5~1:7的氧气和氮气;
3)恒温扩散:保持炉内温度为830-840℃,继续通入流量比为1:5~1:7的氧气和氮气5-20min;
4)降温出炉:保持炉内温度为830-840℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。
2.如权利要求1所述的一种太阳能电池扩散工艺,其特征在于:步骤2以及步骤3中通入的氧气为100-160sccm、氮气为700-840sccm,时间均为8-12min。
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CN103367551A (zh) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | 一种晶体硅太阳能电池的扩散工艺 |
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CN103367551A (zh) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | 一种晶体硅太阳能电池的扩散工艺 |
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