CN104157732B - 一种太阳能电池扩散工艺 - Google Patents

一种太阳能电池扩散工艺 Download PDF

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CN104157732B
CN104157732B CN201410372147.3A CN201410372147A CN104157732B CN 104157732 B CN104157732 B CN 104157732B CN 201410372147 A CN201410372147 A CN 201410372147A CN 104157732 B CN104157732 B CN 104157732B
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CN104157732A (zh
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孙飞龙
翟俊杰
何晨旭
朱姚培
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Jiangsu Rongma New Energy Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract

本发明公开了一种太阳能电池扩散工艺，依次包括以下步骤：将硅片放置在扩散炉中，在800℃以下以300-600sccm的速率通入氧气8-20min；用5-20min将炉内温度升至830-840℃，整个升温过程中持续通入流量比为1:5~1:7的氧气和氮气；保持炉内温度为830-840℃，继续通入流量比为1:5~1:7的氧气和氮气5-20min；保持炉内温度为830-840℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。本发明步骤2和3中的氧气和氮气的比例为1：5-1：7，能解决扩散方阻中间点偏高的问题，有效改善方阻的均匀性。

Description

一种太阳能电池扩散工艺
技术领域
本发明涉及太阳能电池制造领域，具体涉及一种太阳能电池扩散工艺。
背景技术
随着高科技产业带动光伏产业的快速发展，太阳能电池的制造技术越来越成熟，新技术与新的工艺方法不断应运而出，制作高方阻已是技术革新的方向，但是随着扩散方阻的提高，方阻均匀性会相应变差，不均匀度越来越大，影响了工艺的稳定控制同时也影响后续烧结的效果。现有的制造高方阻电池的工艺较阐述不合理，扩散后的硅片均匀性较差。
发明内容
本发明的目的在于提供一种太阳能电池扩散工艺，制作90Ω/sq高方阻，操作简洁方便，能有效改善扩散方阻的均匀性。
本发明通过以下技术方案实现：
一种太阳能电池扩散工艺，依次包括以下步骤：
1）扩散前氧化：将硅片放置在扩散炉中，在800℃以下以300-600sccm的速率通入氧气8-20min；
2）升温扩散：用5-20min将炉内温度升至830-840℃，整个升温过程中持续通入流量比为1:5~1:7的氧气和氮气；
3）恒温扩散：保持炉内温度为830-840℃，继续通入流量比为1:5~1:7的氧气和氮气5-20min；
4）降温出炉：保持炉内温度为830-840℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。
本发明进一步的改进方案是，步骤2以及步骤3中通入的氧气为100-160sccm、氮气为700-840sccm，时间均为8-12min。
本发明与现有技术相比具有以下优点：
本发明步骤2和3中的氧气和氮气的比例为1：5-1：7，能解决扩散方阻中间点偏高的问题，有效改善方阻的均匀性。
具体实施方式：
下面选取制绒后的硅片各500片，用现有工艺和本发明的工艺分别扩散：
现有工艺对比例1
将硅片放置在扩散炉中，在800℃以下以600sccm的速率通入氧气20min；用5min将炉内温度升至830℃，整个升温过程中持续通入流量比为1:2的氧气和氮气；保持炉内温度为830℃，继续通入流量比为1:2的氧气和氮气20min；保持炉内温度为820-830℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。
实施例1
一种太阳能电池扩散工艺，包括以下步骤：
1）扩散前氧化：将硅片放置在扩散炉中，在800℃以下以600sccm的速率通入氧气20min；
2）升温扩散：用12min将炉内温度升至840℃，整个升温过程中持续通入流量比为1:7的氧气和氮气，具体的是氧气100sccm，氮气为700sccm，
3）恒温扩散：保持炉内温度为840℃，继续通入流量比为1:7的氧气和氮气12min，具体的是氧气100sccm，氮气为700sccm；
4）降温出炉：保持炉内温度为840℃时间为10min后将炉内温度降至常温并取出硅片测其方块电阻。
测得现有工艺对比例1与实施例1的对比数据如下：
从以上数据可看出，对比例1中5个温区不均匀度分别为16.5%、13.1%、6.0%、5.0%，4.9%，平均方阻为91.0Ω/sq，平均均匀度为9.10%。
实施例1中5个温区不均匀度分别为5.2%、3.7%、4.0%、5.6%、6.4%，平均方阻为89.3Ω/sq，平均均匀度4.98%，改善效果显著。
实施例2
一种太阳能电池扩散工艺，包括以下步骤：
将硅片放置在扩散炉中，在800℃以下以300sccm的速率通入氧气8min；用8min将炉内温度升至830℃，整个升温过程中持续通入流量比为1:5的氧气和氮气，具体的是氧气150sccm，氮气为750sccm；保持炉内温度为830℃，继续通入流量比为1:5的氧气和氮气8min，具体的是是氧气150sccm，氮气为750sccm；保持炉内温度为830℃时间为5min后将炉内温度降至常温并取出硅片测其方块电阻。
实施例2中5个温区不均匀度分别为8.2%、4.3%、7.6%、3.1%、5.2%，平均方阻为89.3Ω/sq，平均均匀度5.68%，与对比例1相比改善效果显著。
实施例3
一种太阳能电池扩散工艺，包括以下步骤：
将硅片放置在扩散炉中，在800℃以下以450sccm的速率通入氧气12min；
用10min将炉内温度升至830-840℃，整个升温过程中持续通入流量比为1:6的氧气和氮气，具体的是氧气120sccm，氮气为720sccm；保持炉内温度为830-840℃，继续通入流量比为1:6的氧气和氮气10min，具体的是氧气120sccm，氮气为720sccm；保持炉内温度为830-840℃时间为8min后将炉内温度降至常温并取出硅片测其方块电阻。
实施例3中5个温区不均匀度分别为7.8%、3.2%、4.6%、6.2%、2.9%，平均方阻为89.3Ω/sq，平均均匀度4.94%，与对比例1相比改善效果显著。

Claims (2)

1.一种太阳能电池扩散工艺，其特征依次包括以下步骤：
1）扩散前氧化：将硅片放置在扩散炉中，在800℃以下以300-600sccm的速率通入氧气8-20min；
2）升温扩散：用5-20min将炉内温度升至830-840℃，整个升温过程中持续通入流量比为1:5~1:7的氧气和氮气；
3）恒温扩散：保持炉内温度为830-840℃，继续通入流量比为1:5~1:7的氧气和氮气5-20min；
4）降温出炉：保持炉内温度为830-840℃时间为5-10min后将炉内温度降至常温并取出硅片测其方块电阻。
2.如权利要求1所述的一种太阳能电池扩散工艺，其特征在于：步骤2以及步骤3中通入的氧气为100-160sccm、氮气为700-840sccm，时间均为8-12min。
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CN102779897A (zh) * 2012-05-22 2012-11-14 浙江正泰太阳能科技有限公司 一种一次性扩散制备选择性发射极的方法
CN103367551A (zh) * 2013-08-06 2013-10-23 中利腾晖光伏科技有限公司 一种晶体硅太阳能电池的扩散工艺

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TWI390755B (zh) * 2009-03-19 2013-03-21 Ind Tech Res Inst 太陽能電池的製造方法

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CN102779897A (zh) * 2012-05-22 2012-11-14 浙江正泰太阳能科技有限公司 一种一次性扩散制备选择性发射极的方法
CN103367551A (zh) * 2013-08-06 2013-10-23 中利腾晖光伏科技有限公司 一种晶体硅太阳能电池的扩散工艺

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