CN104157554A - Germanium material surface stable passivation method - Google Patents
Germanium material surface stable passivation method Download PDFInfo
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- CN104157554A CN104157554A CN201410406487.3A CN201410406487A CN104157554A CN 104157554 A CN104157554 A CN 104157554A CN 201410406487 A CN201410406487 A CN 201410406487A CN 104157554 A CN104157554 A CN 104157554A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Abstract
The invention relates to a germanium material surface stable passivation method. The method is characterized in that Ge and mercaptan with a long carbon chain react under a specific condition; by adjusting the composition and the temperature of a reaction system, an oxidation layer on the surface of the Ge is effectively removed, and stable passivation protection of the Ge surface is realized; and the long carbon chain mercaptan is CH3(CH2) nSH, wherein n is no less than 9. Specifically, when n is 11, 15 or 17, the long carbon chain mercaptan is respectively dodecyl mercaptan, cetyl mercaptan or octadecyl mercaptan. According to the invention, the prepared passivation Ge can be stable in an atmospheric environment for at least 15 days, and the stable time is far greater than reported 48h; the prepared passivation Ge can be stable under an aqueous phase (high humidity) condition for at least 10 days, and the stable time is far greater than reported several hours; and the Ge surface cleaning and passivation method has the advantages of simple operation, convenient use, low cost, obvious passivation effect and the like.
Description
Technical field
The present invention relates to the method for a kind of germanium material surface-stable passivation, be specifically related to a kind of novel method of realizing the passivation of germanium surface-stable by thiol reagent processing.Belong to semi-conducting material technical applications.
Background technology
At present the electronic device of semi-conducting material is developed rapidly in bio-sensing is applied because its high sensitivity and good selectivity make it.As the typical semi-conducting material of one, the biology sensor based on silicon materials is widely studied.And as semi-conducting material of the same clan---the germanium (Ge) of silicon, compared with Si, the electronics of Ge and hole mobility are respectively 3 times and 4 times of Si, and the energy gap of Ge is more much smaller than Si.Therefore, Ge can realize the electronic device of high mobility as channel material, is expected to be used widely in high-performance biochemical sensor field.But as a kind of semi-conducting material of finding prior to Si, Ge can form stable surface oxide layer (SiO unlike Si
2), under Ge material surface nature, easily generate that dielectric constant is little, poor heat stability and the large oxide layer (GeO of defect concentration
x), and the composition of oxide layer is subject to the impact of the many factors such as humidity, crystal orientation, illumination.Although Ge is the preparation for semiconductor device prior to Si, lacks stable surface and has greatly suppressed the fast development of Ge material at microelectronic, and then affected its application in bioelectronics field.
But, to want to want by Ge material for biochemical sensitive field, primary problem is to obtain the Ge material of surface-stable.[G.Collins in a series of Ge surface passivation method of having reported at present, J.D.Holmes.Chemical functionalisation of silicon and germanium nanowires[J] .Journal of Materials Chemistry, 2011,21 (30): 11052 ?11069.], generally first use halogen acids (HF, HCl, HBr or HI etc.) to remove the oxide layer on Ge surface, realize the preliminary passivation on Ge surface, then by reaching the effect of surface passivation with Grignard reagent, photochemistry, diazol or germanium alkylation reaction.From the result of current report, in multiple Ge surface passivation treatment method, the Ge surface of processing by HF can only maintain the stability [T.Deegan of tens minutes in air, G.Hughes.An X ?ray photoelectron spectroscopy study of the HF etching of native oxides on Ge (111) and Ge (100) surfaces[J] .Applied Surface Science, 1998, 123:66 ?70.], and the Ge surface stability of processing by HCl is also no more than 2h[D.Bodlaki, H.Yamamoto, D.H.Waldeck, E.Borguet.Ambient stability of chemically passivated germanium interfaces[J] .Surface Science, 2003, 543:63 ?74., Wang Shengkai etc. a kind of germanium wafer is cleaned and the method [P] of surface passivation. Chinese patent: CN103681245A, 2014 ?03 ?26.].In addition, connect by Ge-C or Ge-S the long carbochain (-(CH realizing
2)
n-) protect and can the lasting time generally also be no more than Tan 48h[Ge Ming etc. a kind of surface passivation method [P] of germanium. Chinese patent: CN102005390B; 2012 ?10 ?17.]; if and this stabilization time, meeting under water (high humility) condition reduced greatly, these are all unfavorable for the subsequent applications of Ge material.Therefore, be badly in need of at present a kind of Ge surface passivation method efficiently, can realize the long-time passivation protection of Ge material surface.
Summary of the invention
The object of the present invention is to provide the method for a kind of germanium material surface-stable passivation, to meet the application demand of Ge material, specifically the present invention proposes one and utilize Ge and mercaptan (R-SH, the mercaptan of herein selecting generally contains long carbochain (CH
3(CH
2)
nsH; n>=9); typical in lauryl mercaptan (n=11), 16 mercaptan (n=15), stearylmercaptan (n=17) etc.) method of reacting under given conditions; by adjusting the composition of reaction system and the temperature of reaction; realize effective removal of Ge surface oxide layer and metal ion; obtain the Ge sheet of surface chlorination; then be dipped in long carbochain thiol solution and carry out Passivation Treatment; long carbochain thiol molecule on Ge surface self-organization; realize the stable passivation protection on Ge surface, described long carbochain mercaptan is CH
3(CH
2)
nsH, n>=9.
For reaching above-mentioned purpose of the present invention, a kind of Ge material surface that the present invention proposes is stablized passivating method, and concrete steps are as follows:
Step 1: Ge sheet is divided and is placed in successively acetone and ethanolic solution carries out ultrasonic cleaning, effectively remove the organic pollution on Ge sheet surface;
Step 2: adopt successively deionized water and hydrochloric acid solution to carry out soaking and washing to Ge sheet, effectively remove oxide layer and the metal ion of Ge sheet remained on surface; And dry up the Ge sheet that obtains surface chlorination with nitrogen;
Step 3: adopt the mixed liquor preparation of second alcohol and water for the thiol solution of passivation;
Step 4: under heating condition, Ge sheet good step 2 soaking and washing is dipped in the thiol solution that step 3 prepares and carries out Passivation Treatment, make thiol molecule on Ge surface self-organization, thereby obtain this surface of overstable passivation.
In such scheme, Ge described in step 1 is that crystal orientation is the Ge sheet of (100), (110) or (111), or is the Ge growing on insulating barrier.The ultrasonic cleaning time is 10-20min.
In such scheme, the analysis pure hydrochloric acid that hydrochloric acid solution described in step 2 is 38.3% by mass percent forms with deionized water dilution, the hydrochloric acid mass percent adopting in this step is 5～10%, and the acid-treated time of deionized water and salt is 30min～2h.
In such scheme, in step 3, preparing the solvent that thiol solution uses is the mixed liquor of second alcohol and water, and wherein the content volume percentage of water is 10～50%, and the ultimate density of mercaptan is 0.1～10mmol/L.
In such scheme, in step 4, the system of passivation reaction need to seal to reduce the volatilization of ethanol, and the temperature range of reaction is 60～80 DEG C, and passivation time is 12～24h.
In such scheme, except the passivation reaction in step 4 need to be carried out under specific heating condition (60～80 DEG C), other processing all complete under room temperature (25 DEG C of left and right).
Can find out from technique scheme, the present invention has following beneficial effect: 1, the present invention adopts different reagent to clean Ge sheet surface, Ge surface contaminant and top layer oxide layer are effectively removed, and realized the first one-step chlorination (Ge-Cl) on Ge surface, for follow-up passivation provides clean Ge surface; 2, the present invention adopts the mixed liquor preparation thiol reagent of second alcohol and water, on the one hand ethanol can effectively disperse to be insoluble in the thiol reagent of water, and the water dissolving each other with ethanol on the other hand can effectively suppress the oxidative attack of the passivating film of extraneous residual oxygen to self assembly in passivating process; 3, the present invention adopts the passivating conditions of suitable heating can effectively accelerate on the one hand the formation speed of self assembly passivating film, can improve on the other hand compactness and the stability of self-assembled film; 4, the long-time (>15 days of the passivation Ge finally preparing with such scheme energy under atmospheric environment, at least 15 days) remain stable, be far longer than the 48h having reported for work, also exceed 10 days its stabilization time under water (high humility) condition, much larger than a few hours of having reported for work; 5, the method for Ge surface clean provided by the invention and passivation, has the advantages such as simple to operate, easy to use, with low cost, passivation effect is obvious.
Brief description of the drawings
Fig. 1 provided by the inventionly cleans and the principle schematic of surface passivation Ge sheet:
(a), (b), (c) be sample treatment step, be specially:
(a) the blank Ge print that process acetone and ethanol clean;
(b) the Ge print of process deionized water and salt acid treatment rear surface chlorination;
(c) the Ge print of employing mercaptan (R-SH) passivation;
Fig. 2 cleans Ge sheet in the embodiment of the present invention 1 and the schematic flow sheet of surface passivation;
Fig. 3 be in the embodiment of the present invention 1 before salt acid treatment x-ray photoelectron power spectrum (XPS) result of Ge print Ge3d;
Fig. 4 be in the embodiment of the present invention 1 after salt acid treatment x-ray photoelectron power spectrum (XPS) result of Ge print Ge3d and Cl2p, be specially:
(a) be x-ray photoelectron power spectrum (XPS) result of Ge print Ge3d after salt acid treatment;
(b) be x-ray photoelectron power spectrum (XPS) result of Ge print Cl2p after salt acid treatment;
Fig. 5 is x-ray photoelectron power spectrum (XPS) the result comparing result of the C1s of the positive lauryl mercaptan Passivation Treatment Ge of warp in the embodiment of the present invention;
Fig. 6 is the water contact angle stability comparative test result through positive lauryl mercaptan Passivation Treatment Ge in the embodiment of the present invention.
1 germanium oxide (GeO
x, comprise+the multiple valence states such as 1 ,+2 ,+3 ,+4);
2 germanium materials (zero-valent state);
The germanium material surface of 3 surface chlorination;
4 thiol molecules (R-SH).
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, further to set forth substantive distinguishing features of the present invention and significant progressive, but the present invention only limits to by no means embodiment.
Embodiment 1
Be positive lauryl mercaptan (molecular formula CH for the mercaptan of passivation in the present embodiment
3(CH
2)
10cH
2the Ge sheet crystal orientation of SH), treating Passivation Treatment is (111).
As shown in Figure 1, Fig. 1 is provided by the invention this Ge sheet is cleaned and the principle schematic of surface passivation, and the method comprises the following steps:
Step 1: be the small pieces that the Ge sheet cutting of (111) is 5mm × 5mm by crystal orientation, then Ge sheet be dipped into successively in acetone and ethanolic solution to ultrasonic cleaning 15min to remove the organic pollution on Ge sheet surface.After ultrasonic cleaning, Ge print dries up stand-by with nitrogen.
Step 2: the Ge sheet after surface cleaning processing in step 1 is dipped into 30min in deionized water, tentatively removes the water miscible oxide on Ge sheet surface (as GeO
2).Then Ge sheet is dipped into mass percent and is immersion treatment 30min in 10% hydrochloric acid solution, further remove the oxide of Ge sheet remained on surface.Then use enough deionized water rinsing hydrochloric acid Ge sample after treatment, after drying up with nitrogen, obtain the Ge sample of surface chlorination.
Step 3: the positive lauryl mercaptan solution 10mL that is 2ammol/L with absolute ethyl alcohol compound concentration, after fully mixing again to the deionized water that adds 10mL in solution.For guaranteeing that reagent mix is abundant, with the abundant mix reagent of oscillator until the white in mix reagent be suspended thing disappear.The reaction reagent finally obtaining is the positive lauryl mercaptan solution (the 1:1 preparation by volume of second alcohol and water) of ammol/L.Be respectively 0.1mmol/L according to said method compound concentration, the positive lauryl mercaptan reaction reagent of 1mmol/L and 10mmol/L.
Step 4: the Ge sample of the surface chlorination of obtaining in step 2 is dipped in the reaction reagent of the variable concentrations that step 3 prepares.For reducing the volatilization of ethanol in course of reaction, reaction chamber need to be sealed.Thereby the reaction chamber of sealing is obtained to high-quality positive lauryl mercaptan self assembly molecule film as for reacting 24h in the baking oven of 80 DEG C.Reaction finish rear with ethanol ultrasonic cleaning Ge print to remove the residual positive lauryl mercaptan molecule that is adsorbed on print surface, after nitrogen dries up, can obtain the Ge sheet of surperficial high-quality passivation.Other operation in the present embodiment is all carried out under room temperature (25 DEG C of left and right).
Fig. 2 is that the present embodiment cleans Ge sheet and the flow chart of surface passivation
Fig. 3 is x-ray photoelectron power spectrum (XPS) result of the front Ge print Ge3d of salt acid treatment in the present embodiment, the peak at 29.5eV place is corresponding to not oxidized simple substance Ge, and occurs the germanium oxide (GeO of peak corresponding to sample surfaces self-assembling formation at 32.8eV place
x), not there is not natural oxidizing layer with hydrochloric acid Ge sample surfaces before treatment in this presentation of results.
Fig. 4 be in the present embodiment after salt acid treatment x-ray photoelectron power spectrum (XPS) result of Ge print Ge3d and Cl2p, wherein the Ge3d of Fig. 4 a only has obvious peak value to occur at 29.5eV place, and the oxide layer that Ge sample surfaces has effectively been removed in the acid treatment of the peak at 32.8eV place disappearance explanation salt.And the bimodal explanation hydrochloric acid that the Cl2p of Fig. 4 b occurs at 198eV annex has Cl atom to introduce after Ge print is processed, thereby make Ge surface chlorination.
Fig. 5 is x-ray photoelectron power spectrum (XPS) the result comparing result of the C1s of the positive lauryl mercaptan Passivation Treatment Ge of warp in the embodiment of the present invention.Test group (50%, 80 DEG C of water content) in comparing result demonstration embodiment and the phosphorus content of control group (50%, 25 DEG C of water content and not moisture, 25 DEG C) are all higher than blank Ge print, and the phosphorus content of experimental group is the highest.
In the present embodiment, be explanation and difference and the effect of heating condition in passivating process of traditional passivating method, the inventor has designed two groups of control experiments.In check experiment 1, the reaction temperature in step 4 is set as carrying out under room temperature, other experimental conditions are constant, and (Fig. 6 is a).In control experiment 2, the positive lauryl mercaptan solution in step 3 is directly prepared to other experimental conditions constant (Fig. 6) with absolute ethyl alcohol.
Fig. 6 is the water contact angle stability comparative test result of positive lauryl mercaptan Passivation Treatment Ge in the embodiment of the present invention, has compared the contact angle stability of the passivation Ge print of preparing under different condition in embodiment in this result.Result is presented at (water content 50% under aqueous conditions; 25 DEG C) passivation protection effect to be better than tradition not moisture (not moisture; 25 DEG C) result; and further suitably heating (water content 50%; 80 DEG C) can greatly improve the surface stability of passivation Ge print; test result shows that the Ge sample that this condition obtains can long-time (>10 days) keep its water contact angle to be greater than 100 °, and long-time monitoring result shows that its stability under atmospheric environment is greater than 15 days.
Embodiment 2
Be positive 16 mercaptan (molecular formula CH for the mercaptan of passivation in the present embodiment
3(CH
2)
15the Ge sheet crystal orientation of SH), treating Passivation Treatment is (111), (100) or (110).
As shown in Figure 1, comprise the following steps:
Step 1: remove the organic pollution on Ge sheet surface, ultrasonic time be 10 ?20min, all the other detailed processes are with the step 1 in embodiment 1.
Step 2: remove the oxide layer on Ge sheet surface and realize surface chlorination, detailed process is consistent with the step 2 in embodiment 1.
Step 3: the positive 16 thiol solution 10mL that are 2ammol/L with absolute ethyl alcohol compound concentration, fully mix the deionized water that adds 10mL in backward solution.For guaranteeing that reagent mix is abundant, with the abundant mix reagent of oscillator until the white in mix reagent be suspended thing disappear.The reaction reagent finally obtaining is positive 16 thiol solutions (the 1:1 preparation by volume of second alcohol and water) of ammol/L.Be respectively 0.1mM according to said method compound concentration, the positive 16 thiol reactant reagent of 1mM and 10mM.
Step 4: the Ge sample of the surface chlorination of obtaining in step 2 is dipped in the reaction reagent of the variable concentrations that step 3 prepares.For reducing the volatilization of ethanol in course of reaction, reaction chamber need to be sealed.Thereby the reaction chamber of sealing is obtained to high-quality positive 16 mercaptan self assembly molecule films as for reacting 24h in the baking oven of 80 DEG C.Reaction finish rear with ethanol ultrasonic cleaning Ge print to remove residual positive 16 thiol molecules that are adsorbed on print surface, after nitrogen dries up, can obtain the Ge sheet of surperficial high-quality passivation.Other test operations of the present embodiment all carry out under room temperature (25 DEG C of left and right).
In the present embodiment, for explanation and difference and the effect of heating condition in passivating process of traditional passivating method, two groups of control experiments have been designed herein.In control experiment one, the reaction temperature in step 4 is set as carrying out under room temperature, other experimental conditions and experimental group are consistent.In check experiment 2, positive 16 thiol solutions in step 3 are directly prepared to other experimental conditions constant (with Fig. 6 similar results) with absolute ethyl alcohol.
Embodiment 3
Be positive stearylmercaptan (molecular formula CH for the mercaptan of passivation in the present embodiment
3(CH
2)
17the Ge of the Ge sheet crystal orientation of SH), treating Passivation Treatment for growing on (111) or insulating barrier.
As shown in Figure 1, comprise the following steps:
Step 1: remove the organic pollution on Ge sheet surface, detailed process is with the step 1 in embodiment 1.
Step 2: remove the oxide layer on Ge sheet surface and realize surface chlorination, detailed process is with embodiment 1 step 2.
Step 3: the positive stearylmercaptan solution 10mL that is 2ammol/L with absolute ethyl alcohol compound concentration, fully mixes the deionized water that adds 10mL in backward solution.For guaranteeing that reagent mix is abundant, with the abundant mix reagent of oscillator until the white in mix reagent be suspended thing disappear.The reaction reagent finally obtaining is the positive stearylmercaptan solution (the 1:1 preparation by volume of second alcohol and water) of ammol/L.Be respectively 0.1mM according to said method compound concentration, the positive stearylmercaptan reaction reagent of 1mM and 10mM.
Step 4: the Ge sample of the surface chlorination of obtaining in step 2 is dipped in the reaction reagent of the variable concentrations that step 3 prepares.For reducing the volatilization of ethanol in course of reaction, reaction chamber need to be sealed.Thereby the reaction chamber of sealing is obtained to high-quality positive stearylmercaptan self assembly molecule film as for reacting 24h in the baking oven of 80 DEG C.Reaction finish rear with ethanol ultrasonic cleaning Ge print to remove the residual positive stearylmercaptan molecule that is adsorbed on print surface, after nitrogen dries up, can obtain the Ge sheet of surperficial high-quality passivation.Other test operations of the present embodiment all carry out under room temperature (25 DEG C of left and right).
In the present embodiment, for explanation and difference and the effect of heating condition in passivating process of traditional passivating method, two groups of control experiments have been designed herein.In check experiment 1, the reaction temperature in step 4 is set as carrying out under room temperature, other experimental conditions are constant.In check experiment 2, the positive stearylmercaptan solution in step 3 is directly prepared to other experimental conditions constant (similar with the result of Fig. 6) with absolute ethyl alcohol.
Above-described specific embodiment; object technical scheme of the present invention and beneficial effect have been carried out to further detailed description; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. the method for germanium material surface-stable passivation; it is characterized in that utilizing Ge and contain long carbochain mercaptan; reaction under given conditions; by adjusting composition and the temperature of reaction system, realize effective removal of Ge surface oxide layer and metal ion, obtain the Ge sheet of surface chlorination; then be dipped in long carbochain thiol solution and carry out Passivation Treatment; on Ge surface self-organization, long carbochain thiol molecule, realizes the stable passivation protection on Ge surface, and described long carbochain mercaptan is CH
3(CH
2)
nsH, n>=9.
2. by method claimed in claim 1, it is characterized in that the lauryl mercaptan of n=11,16 mercaptan of n=15 or the stearylmercaptan of n=17.
3. by the method described in claim 1 or 2, it is characterized in that concrete steps are:
Step 1: Ge sheet is divided and is placed in successively acetone and ethanolic solution carries out ultrasonic cleaning, to remove the organic pollution on Ge sheet surface;
Step 2: adopt successively deionized water and hydrochloric acid solution to carry out soaking and washing to Ge sheet, to remove oxide layer and the metal ion of Ge sheet remained on surface; And dry up the Ge sheet that obtains surface chlorination with nitrogen;
Step 3: adopt the mixed liquor preparation of second alcohol and water for the thiol solution of passivation;
Step 4: under heating condition, Ge sheet good step 2 soaking and washing is dipped in the thiol solution that step 3 prepares and carries out Passivation Treatment, make long carbochain thiol molecule on Ge surface self-organization, thereby obtain overstable passivated surface.
4. by method claimed in claim 3, it is characterized in that:
A) Ge described in step 1 is that crystal orientation is the Ge sheet of (100), (110) or (111), or is the Ge growing on insulating barrier;
B) the ultrasonic cleaning time is 10-20min;
C) the analysis pure hydrochloric acid that the hydrochloric acid solution described in step 2 is 38.3% by mass percent forms with deionized water dilution, and the hydrochloric acid mass percent adopting in this step is 5～10%, and the acid-treated time of deionized water and salt is 30min～2h;
D) solvent that the preparation thiol solution described in step 3 is used is the mixed liquor of second alcohol and water, and wherein the content volume percentage of water is 10～50%, and the ultimate density of mercaptan is 0.1～10mmol/L;
E) in step 4, the system of passivation reaction need to seal to reduce the volatilization of ethanol, and the temperature range of reaction is 60～80 DEG C, and passivation time is 12～24h;
F), except the passivation reaction in step 4 need to be carried out under 60～80 DEG C of specific heating conditions, other processing all complete under 25 DEG C of room temperatures.
5. by the method described in claim 3 or 4, the concentration that it is characterized in that the long carbochain mercaptan of passivation is 0.1mM/L, 1mM/L or 10mM/L.
6. by method claimed in claim 5, it is characterized in that using oscillator mix reagent, until white is suspended thing disappearance in mix reagent.
7. by method claimed in claim 3, it is characterized in that when step 3 configures thiol solution in ethanol and whose mixed liquor that the ratio of the volume of second alcohol and water is 1:1.
8. by the method described in claim 1 or 3, it is characterized in that the passivation Ge of preparation can remain stable at least 15 days under atmospheric environment, while stablizing, exceed 10 days under water high humidity; Described high humidity refers to 80 DEG C, water content 50%.
9. by method claimed in claim 8, it is characterized in that the passivation Ge material contact angle of positive lauryl mercaptan Passivation Treatment is greater than 100 °.
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706088A (en) * | 2017-09-08 | 2018-02-16 | 吉林建筑大学 | A kind of semiconductor material surface wet method passivating method |
| CN108109903A (en) * | 2017-11-22 | 2018-06-01 | 西交利物浦大学 | A kind of thiol treatment method of gallium nitride surface |
| CN108389913A (en) * | 2018-01-31 | 2018-08-10 | 华南理工大学 | A kind of method of GaAs surface passivations enhancing graphene schottky junction solar cell performance |
-
2014
- 2014-08-18 CN CN201410406487.3A patent/CN104157554A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706088A (en) * | 2017-09-08 | 2018-02-16 | 吉林建筑大学 | A kind of semiconductor material surface wet method passivating method |
| CN108109903A (en) * | 2017-11-22 | 2018-06-01 | 西交利物浦大学 | A kind of thiol treatment method of gallium nitride surface |
| CN108389913A (en) * | 2018-01-31 | 2018-08-10 | 华南理工大学 | A kind of method of GaAs surface passivations enhancing graphene schottky junction solar cell performance |
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Application publication date: 20141119 |