CN104143761A - Low-polarization semiconductor laser based on low coherent technology and manufacturing method thereof - Google Patents
Low-polarization semiconductor laser based on low coherent technology and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a manufacturing method of a low-polarization semiconductor laser based on the low coherent technology. The method comprises the steps that AC is generated through the frequency in the radio-frequency range at first; DC and the AC are superposed and generate low-degeneracy photons through a semiconductor laser, optical amplification is carried out on the low-degeneracy photons through a resonant cavity in the semiconductor laser, and then low-coherence broadband laser light beams are formed; a part of the broadband laser light beams are guided into an optical detector to generate electronic feedback signals, so that the semiconductor laser is kept in the transient state or unsteady state mode; the remaining broadband laser light beams are depolarized to form low-coherence low-polarization laser light at last. The invention further provides the low-polarization semiconductor laser manufactured by the manufacturing method. Laser light generated by the low-polarization semiconductor laser has the advantages of being high in strength and low in coherence and polarization.
Description
Technical field
The present invention relates to a kind of employing based on radio frequency (RF) modulation drive current and reduce low polarization semiconductor laser of semiconductor laser coherence length technology and preparation method thereof, belong to field of semiconductor lasers and depolarizer field.
Background technology
Along with further investigation optical instrument certainty of measurement, optical communication system quality and sensor accuracy being exerted an influence at polarised light, there is active demand for the low polarization semiconductor laser with low coherent technique in numerous association areas.General photodetector is owing to having certain lattice direction, as photomultiplier, ubiquity polarization sensitivity.As in bio-imaging field, there is different action effects in different biological tissues for polarisation of light, and high polarized light source can bring additional noise in the process of bio-imaging; As in sensory field of optic fibre, the phase place relevant to polarization state is easy to be subject to external environment factor to disturb, and causes producing a corresponding change at random phase place, and is added in useful phase signal, in input, form decline, thereby the precision of Fibre Optical Sensor is impacted.
Prior art is effectively reducing the polarizability of light source, even eliminate in the solution that polarised light exerts an influence to optical system to reduce, can utilize fiberoptics characteristic to make various depolarization devices, as the palarization multiplexing depolarizer of extensive use and the phase place relevant depolarizer that disappears.Wherein, palarization multiplexing depolarizer can meet low polarization and power superposition performance simultaneously, but also there is following shortcoming: the one, need to depend on the power-balance of two lasers, and can not guarantee that continuation has low polarization (DOP<10%) within the scope of the working life of this laser; Use required power requirement even if another laser can meet, but or need two lasers to meet above-mentioned power-balance.Although and phase place disappear relevant depolarizer can to one or several lasers simultaneously depolarization, and can possess low polarization characteristic, there is higher-wattage loss and the shortcoming such as with high costs.
Compared with above-mentioned depolarizer, prior art is the Lyot type depolarizer being widely applied equally in recent years in another solution that reduces light source polarizability, elimination polarised light adverse effect, this Lyot depolarizer has the advantage such as low-loss and high reliability, but its depolarization performance directly depends on the spectral characteristic of laser, be mainly applicable to the sheet that moves back to white light.Due to the intrinsic high coherence of laser, make Lyot depolarizer be difficult to obtain satisfied depolarization effect, unless used very long high birefringence optical fiber or very long crystal simultaneously.For example, make spectrum width is the laser depolarization of 100MHz, supposes that the delay inequality speed between fast, slow axis is approximately 5ns/km, just need the high birefringence rate polarization maintaining optical fibre of 2km, with this, Lyot type depolarizer is not suitable for narrow wide light source depolarization, and its range of application is comparatively limited to.
Known from institute, Lyot type depolarizer is during to laser depolarization, this laser must have enough short coherence length, can utilize the intrinsic high coherence of Fiber Bragg Grating FBG (FBG) Techniques For Reducing laser, specifically laser remains many longitudinal mode vibrations, and the live width of each longitudinal mode can be widened to several GHZ orders of magnitude, both factors make the coherence length of laser greatly reduce (reducing by 2 more than the order of magnitude).This technology not only can make the stable output wavelength of semiconductor laser, and can lure laser steady operation under the state of " relevant cancellation " into, but utilize the Lyot type depolarizer of above-mentioned " relevant cancellation " to have significant limitation: first, low polarization stability can be subject to the relevant intrinsic chaotic characteristic of cancellation and restrict, in some cases, laser likely changes jobs in " bistable state " relevant cancellation and external cavity resonance state lower whorl, and this pattern conversion is unordered random, unpredictalbe, if laser works is in external cavity resonance situation, the coherence of laser can further be strengthened, be that coherence length can lengthen again, this can make Lyot type depolarizer usefulness greatly reduce, secondly, " relevant cancellation type " laser must match with FBG, to inapplicable with the laser of Space Coupling type, finally, due to the dependence to laser longitudinal mode structure, have the semiconductor laser of high side mode suppression ratio (SMSR) for single longitudinal mode type, relevant " cancellation state " is difficult to realize.Above, although Lyot type depolarizer for example, has been obtained low polarization to low coherence light source (SLD or LED) at present, the low optical strength characteristics of this type of light source does not meet the requirement of many applications.
Therefore, a kind of low polarization, low relevant, high optical strength, high reliability, and the semiconductor laser of low cost and miniaturization function, is a research direction with important practical usage, to be widely used at numerous emerging fields with the light source of its generation.
Summary of the invention
The object of the invention is the deficiency existing in order to solve prior art, a kind of low polarization semiconductor laser based on low coherent technique proposing and preparation method thereof, specifically a kind of employing based on radio frequency (RF) modulation drive current reduced low polarization semiconductor laser of semiconductor laser coherence length technology and preparation method thereof.The object of the invention realizes by subordinate's technical scheme:
The preparation method of a kind of low polarization semiconductor laser based on low coherent technique that the present invention discloses, comprises the steps:
1. produce alternating current AC by the frequency of radio-frequency region;
2. will after a direct current DC and described alternating current AC stack, produce low degeneracy photon through semiconductor laser, this low degeneracy photon forms low coherence's broad band laser bundle through the chamber light amplification of semiconductor laser interior resonance, each longitudinal mode of being exported by semiconductor laser all obtains broadening;
3. by described part broad band laser bundle lead-in light detector, produce electrical feedback signal real-time response, that feed back to direct current DC or alternating current AC, to keep described semiconductor laser in transient state or unstable state mould pattern;
4. will after the described broad band laser bundle depolarization of residue, form laser low coherence, low polarization.
Further, the response time of described photo-detector is greater than 100ns to the inventive method.
The inventive method further, wherein: described semiconductor laser bias voltage approaches critical value, can show many longitudinal mode emission.The modulation of semiconductor laser two-forty is led laser spectroscopy processed because transient state spectrum phenomenon is widened.Different modulation indexs produces different modulation depths and widens spectrum.Semiconductor laser has extensive and stable longitudinal mode, but not mode hopping, and each stable longitudinal mode has obtained broadening.
The inventive method further, wherein: further comprising the steps of: operate described semiconductor laser with multiple transverse modes, described transverse mode is by constantly disturbance of rf modulations (RF).
Further, described semiconductor laser is to be coupled to monomode fiber output, to improve semiconductor laser optical quality for the inventive method.
The present invention also comprises the low polarization semiconductor laser of being prepared by any one said method, comprise produce alternating current AC radio-frequency oscillator, produce the partially straight generator of direct current of direct current DC, obtained alternating current AC and direct current DC stack formed to the superimposer of semiconductor laser machine drive current; Also comprise optical splitter and the depolarizer by the laser beam depolarization obtaining via optical splitter; Also comprise an automatic power control system, described automatic power control system comprises the laser beam obtaining via optical splitter is converted into the feedback amplifier that the signal of telecommunication feeds back to the photo-detector of described direct current DC or described alternating current AC and this signal of telecommunication is amplified.
The low polarization semiconductor laser of the present invention further, comprises the low coherence semiconductor laser of a spectrum, time and spatial stability, and described semiconductor laser sends the light from ultraviolet to infrared light wavelength scope.
The low polarization semiconductor laser of the present invention further, also comprises a shunt, and described shunt activates through radiofrequency signal, shunts at any time described laser drive current and controls the operating state of semiconductor laser.
Further, described radio-frequency oscillator comprises amplifier and/or rectifier to the low polarization semiconductor laser of the present invention.Described radio-frequency oscillator is a kind of pulse generator that produces radio frequency repetition burst pulse; Described DC power supply is created in the direct current (DC) bias of operating current level, and is modulated by automatic power control system.Described radiofrequency signal is sinusoidal wave, distortion sine wave, rectified sine wave or any non-sinusoidal waveform.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: described automatic power control system also comprises photodiode components and a feedback circulation; Described photodiode components comprises with one for the light signal of reception is converted to the signal of telecommunication, there is the photodiode of the response time of at least 100 ns, and semiconductor laser front end face laser beam splitting becomes two parts by one, and provide the laser beam of a part wherein to the optical splitter of described photodiode; Described feedback circulation also comprises: the feedback amplifier that amplifies the input photodiode signal of telecommunication, according to the predetermined reference voltage of the initial value of semiconductor laser power output and a comparator, for with the feedback signal comparison of benchmark, and adjust drive current direct current (DC) bias according to result relatively.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: described automatic power control system also comprises: for arranging and maintain the temperature controller of semiconductor laser working temperature; A kind of constant-current source that stable drive current is provided; Described constant-current source is by current feedback stable circulation, and described current feedback circulation comprises: a kind of current sense resistor; Formulate reference voltage and a kind of comparator according to the initial value of the power output of semiconductor laser, for the feedback signal comparison of benchmark, and adjust drive current direct current (DC) bias according to result relatively.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: low coherence's the coherence length of laser and the Lyot depolarizer of the characteristics design of relevant collection of illustrative plates that produce for above-mentioned steps, the mentality of designing of this depolarizer is different from the design of traditional depolarizer, not only to consider the coherence length of depolarization light beam, and will consider the characteristic of relevant collection of illustrative plates and the property taken into account of multiple systems of depolarization light beam.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: depolarizer can allow low coherence's sharp irradiating light beam itself produce enough large phasic difference, the coherence of the room and time of reduction own.And, have between the light beam of optical path difference, have again can not be relevant characteristic.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: depolarizer can allow low coherence's sharp irradiating light beam itself produce enough large phasic difference, and in the result of statistical measurement, light beam has low polarization characteristic.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: the light source so producing will have high strength simultaneously, low relevant, the characteristic of low polarization.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: the laser of the low relevant low polarization of RF modulation can match with the Lyot type depolarizer of single-stage birefringece crystal, and obtain depolarization, depolarization performance can regulate crystal length to obtain the largest optimization of performance according to laser longitudinal module structure.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: the low relevant linear polarization of RF modulation, or elliptically polarized light can match to reach depolarization with the Lyot type depolarizer of twin-stage birefringece crystal, similarly depolarization performance can regulate crystal length to obtain the optimization in performance according to laser longitudinal module structure.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: the low relevant linear polarization of RF modulation or elliptically polarized light can be carved angle birefringece crystal depolarizer with twin-stage band and combine to obtain depolarization, because carve the extra phase difference that introduce at whole optical aperture at angle, degree of polarization will further be reduced.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: the laser of the low polarization of above-mentioned spatial can be coupled to monomode fiber and export.Monomode fiber can improve semiconductor laser optical quality, for example, reduce astigmatism, completely circularity.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: RF modulation, the semiconductor laser of low coherence's polarization maintaining optical fibre coupling can combine and obtain depolarization effect with single-stage or twin-stage optical fiber Lyot depolarizer, and depolarization performance can be by regulating polarization maintaining optical fibre length to optimize.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: RF modulation, the Lyot depolarizer that the laser beam of multiple spatials of low coherence can be made of single birefringece crystal depolarization simultaneously.
Preferably, the low polarization semiconductor laser of above-mentioned one, wherein: RF modulation, the laser of multiple coupling fibers of low coherence can be by single optical fiber Lyot depolarizer while depolarization.
Further, described depolarizer is the Lyot depolarizer according to the characteristics design of the coherence length of produced low coherence's laser and relevant collection of illustrative plates to the low polarization semiconductor laser of the present invention.
By application of the present invention and enforcement, its beneficial effect is mainly reflected in:
(1) the laser that the low polarization semiconductor laser of the present invention produces has high strength, low relevant, the characteristic of low polarization;
(2) adopt the method that produces low coherence light beam after AC of the present invention and DC stack through semiconductor laser, make depolarizer of the present invention, specifically Lyot type depolarizer can be simply, effectively implement, be applicable to various conventional semiconductor lasers;
(3) the present invention is not only applicable to general semiconductor laser, can also be applicable to multicolour laser, and the laser of polychrome, by being its single depolarizer designing, can be obtained to low relevant, the low polarization laser output of polychrome;
(4) the advantage that the low polarization semiconductor laser of the present invention has low cost, a miniaturization functionalization is conducive in numerous association area extensive uses.
Brief description of the drawings
Fig. 1 is the configuration synoptic chart of the low polarization semiconductor laser of the present invention;
Fig. 2 is the main part configuration schematic diagram of the low polarization semiconductor laser of the present invention;
Fig. 3 is the O light E light distribution map of the embodiment of the present invention 1 through corresponding depolarizer;
Fig. 4 (a) is the relevant collection of illustrative plates that does not pass through corresponding depolarizer of the embodiment of the present invention 1;
Fig. 4 (b) is the relevant collection of illustrative plates of the corresponding depolarizer of process of the embodiment of the present invention 1;
Fig. 5 is the single-stage enforcement figure of the depolarizer of the embodiment of the present invention 1;
Fig. 6 is the two-stage enforcement figure of the depolarizer of the embodiment of the present invention 1;
Fig. 7 is the two-stage band angle of wedge enforcement figure of the depolarizer of the embodiment of the present invention 1;
Fig. 8 is the single-stage depolarizer of the embodiment of the present invention 1 and the enforcement figure through light coupling;
Fig. 9 is the two-stage depolarizer of the embodiment of the present invention 1 and the enforcement figure through light coupling;
Figure 10 is the enforcement figure being coupled with angle of wedge two-stage depolarizer and through light of the embodiment of the present invention 1;
Figure 11 (a) is that the embodiment of the present invention 1 depolarizer is implemented synoptic chart;
Figure 11 (b) is that the depolarizer of embodiment of the present invention multiple beam is implemented synoptic chart;
Figure 12 is embodiment of the present invention process coupling fiber depolarizer, then the synoptic chart of coupling fiber output;
Figure 13 is embodiment of the present invention process coupling fiber depolarizer, the directly synoptic chart of collimation output;
Figure 14 is the test data of the degree of polarization stability of the embodiment of the present invention 1.
Embodiment
Below in conjunction with accompanying drawing and instantiation, technical solution of the present invention is described further, for embodiment be only to the present invention do generality illustrate, contribute to understand better the present invention, but can't limit the scope of application of the present invention.
The present invention has disclosed a kind of low polarization semiconductor laser based on low coherent technique and preparation method thereof, by the present invention, can realize low polarization (degree of polarization can reach 0.83%), high polarization is stable (in the range of temperature of 20 ° of C to 35 ° of C, the variable quantity of the degree of polarization of average every degree is only 0.06%), highly integrated semiconductor laser.The described low polarization semiconductor laser preparation method based on low coherent technique of application, the crystal length of depolarizer only needs ≈ 10mm, if do not apply above-mentioned technology, reach same degree of polarization light beam, the crystal length of depolarizer will need ≈ 3000mm, and this cannot operate in practice.
The present invention has disclosed a kind of low polarization semiconductor laser based on low coherent technique and preparation method thereof, and concrete steps are described below:
1. produce alternating current AC by the frequency of radio-frequency region;
2. will after a direct current DC and described alternating current AC stack, produce low degeneracy photon through semiconductor laser, this low degeneracy photon forms low coherence's broad band laser bundle through the chamber light amplification of semiconductor laser interior resonance, each longitudinal mode of being exported by semiconductor laser all obtains broadening;
3. by described part broad band laser bundle lead-in light detector, the response time of this photo-detector is greater than 100ns, and produce electrical feedback signal real-time response, that feed back to direct current DC or alternating current AC, to keep described semiconductor laser in transient state or unstable state mould pattern;
4. will after the described broad band laser bundle depolarization of residue, form laser low coherence, low polarization.
Semiconductor laser of the present invention can be the semiconductor laser of many longitudinal mode outputs, and its bias voltage approaches critical value.The modulation of semiconductor laser two-forty is led laser spectroscopy processed because transient state spectrum phenomenon is widened, different modulation indexs produces different modulation depths and widens spectrum, and semiconductor laser has extensive and stable longitudinal mode, but not mode hopping, and each stable longitudinal mode has obtained broadening.
Before semiconductor laser is accepted low degeneracy photon, also comprise the step that operates described semiconductor laser with multiple transverse modes, described transverse mode is by the continuous disturbance of rf modulations.And semiconductor laser is to be coupled to monomode fiber output, and to improve semiconductor laser optical quality, described radiofrequency signal is sinusoidal wave, distortion sine wave, rectified sine wave or any non-sinusoidal waveform.
As shown in Figure 1, the present invention also comprises the low polarization semiconductor laser of being prepared by any one low polarization semiconductor laser preparation method based on low coherent technique of the present invention, comprise produce alternating current AC radio-frequency oscillator 112, produce the partially straight generator 113 of direct current of direct current DC, obtained alternating current AC and direct current DC stack formed to the superimposer 114 of semiconductor laser 111 drive currents; Also comprise optical splitter 123 and the depolarizer 124 by the laser beam depolarization obtaining via optical splitter 123; Also comprise an automatic power control system, described automatic power control system comprises the laser beam obtaining via optical splitter is converted into the feedback amplifier 115 that the signal of telecommunication feeds back to the photo-detector 130 of described direct current DC or described alternating current AC and this signal of telecommunication is amplified.
Wherein, the low polarization semiconductor laser of the present invention particularly, also comprises a shunt, and described shunt activates through radiofrequency signal, shunts at any time described laser drive current and controls the operating state of semiconductor laser; Described radio-frequency oscillator comprises amplifier and/or rectifier; Described automatic power control system also comprises the reference voltage source predetermined according to the initial value of semiconductor laser power output, and one for the feedback signal comparison of benchmark and adjust the comparator of drive current direct current (DC) bias according to result relatively; For arranging and maintain the temperature controller of semiconductor laser working temperature; The current sense resistor of stable drive current is provided; Described depolarizer 124 is the Lyot depolarizers according to the characteristics design of the coherence length of produced low coherence's laser and relevant collection of illustrative plates.
Embodiment 1, the low polarization semiconductor laser of one of the present embodiment, as shown in Figure 2, comprises a laser diode module 110 and photodiode components 130.This laser diode module 110 not only comprises the partially straight generator 113 of radio-frequency oscillator 112, direct current, superimposer 114, also comprises semiconductor laser 111 and collimating mirror 121.This photodiode components 130 further comprises spectroscope 123, photo-detector 130 and depolarizer 124, and this photo-detector 130 is specially photodiode.Arrow instruction laser optical path shown in Fig. 2, the light sending from semiconductor laser 111 is collimated mirror 121 and collimates; Spectroscope 123, by a part of Laser output 122b lead-in light electric diode 130, converts light signal to electric current.Most Laser output 122a enter depolarizer 124, thereby produce low relevant, low polarized laser beam 125.
Wherein, for laser diode module 110 parts, major function is to drive semiconductor laser.Wherein, what be different from conventional art is, drive circuit allows the mode of operation of semiconductor laser 111 in transient state or unstable state mould all the time, specific embodiment is that partially straight direct current generator 113 and radio-frequency oscillator 112 are applied to the common Semiconductor Lasers 111 of superimposer 114, radio-frequency oscillator 112 is to formulate according to the characterisitic parameter of semiconductor laser 111, object is the state that can reach a kind of coupling with the characterisitic parameter of semiconductor laser 111, making the electronics in the gain media of semiconductor laser 111 is the state in a kind of variation all the time, thereby allow the photon being inspired by electronics (being specially electronics or hole in PN junction) be also in the non-degenerate state of one, adjust radio-frequency oscillator 112, allow the degeneracy of photon of its output reduce as much as possible, the photon of low like this degeneracy amplifies through the resonant cavity of semiconductor laser 111, swash to penetrate with respect to traditional semiconductor laser 111 bandwidth and want much wide laser beam.And this process is for the semiconductor laser 111 of the selectable many longitudinal mode outputs of the present invention, and the bandwidth of each longitudinal mode output is effectively widened, and has reduced the temporal coherence of semiconductor laser 111 output beams simultaneously.
For photodiode components 130 parts, major function is to maintain the mode of operation of semiconductor laser in transient state or unstable state mould that laser diode module 110 parts produce, and promotes the characteristic of output beam.The concrete mechanism of action is: the fraction light 122b being gathered by optical splitter 123 enters photo-detector 130, be specially photodiode, light signal is changed into the corresponding signal of telecommunication by this photo-detector 130, it should be noted that, the corresponding time of photoelectricity of photo-detector 130 must be enough fast, object is to be able to allow semiconductor laser 111 maintain the mode of operation of transient state or unstable state mould, and, effectively reduce in this course the impact on it of background noise and stray light.Be different from conventional art, this process must stop stray light in light path and the reverberation of photo-detector 130 to enter into main optical path, prevents the impact of the mode of operation of their noise spectra of semiconductor lasers in transient state or unstable state mould.The injecting electronic signal feedback amplifier 115 that photo-detector 130 transforms amplifies original signal of telecommunication, and this feedback signal is injected the partially straight generator 113 of direct current, the amount that feedback signal acts on direct current biasing 113 regulation direct-current bias allows semiconductor laser continue the mode of operation in transient state or unstable state mould to reach.
For depolarizer 124 parts, major function is the degree of polarization reducing through the mode of operation laser beam in transient state or unstable state mould of laser diode module 110 parts and photo-detector 130 parts generations.Concrete execution mode be allow mode of operation laser beam in transient state or unstable state mould directly by custom-designed depolarization crystal or through after fiber coupler again by coupled apparatus by light beam coupling to moving back in sheet crystal, thereby allow the light of output arrive the object of depolarization, obtain the semiconductor laser of low polarization.Be different from traditional technology, laser beam is under the mode of operation in transient state or unstable state mould, passes through depolarizer 124 part depolarizations after broadened bandwidth is processed again.But not directly driven directly through depolarizer 124 depolarizations by direct current biasing.
And the design of this depolarizer 124, be different from conventional art and consider temporal coherent length and the polarization characteristic parameter of Laser Output Beam, but the coherence length of the mode of operation laser beam in transient state or unstable state mould producing with process laser diode module 110 parts and photodiode components 130 parts and the characteristic comprehensive Design of relevant collection of illustrative plates.And, being different from conventional art, design is to take into account the feature of the relevant collection of illustrative plates of application interferometer measurement simultaneously.Fig. 3 is the typical O light of output beam process depolarizer 124 parts of the semiconductor laser of application laser diode module 110 parts and photodiode components 130 parts generations, the distribution map of E light.Fig. 4 is the relevant collection of illustrative plates (solid line is the relevant collection of illustrative plates without depolarizer assembly 124 parts, and dotted line is the side-play amount through the relevant collection of illustrative plates of depolarizer assembly 124 parts) of the low polarization semiconductor laser of the present embodiment.The design of depolarizer assembly 124 parts is the bases that are embodied as with laser diode module 110 parts and photodiode components 130 parts, just can allow the degree of polarization of outgoing laser beam be reduced to 0.83% with the depolarizer that YVO4 design of material length is about 10mm on this basis, reach same degree of polarization effect if do not apply above-mentioned technology, need YVO4 material depolarizer design length to be about 3000mm, this is impossible in reality is implemented.
Particularly, for depolarizer 124 parts, the enforcement of depolarizer assembly 124 has various ways, and Fig. 5 is the single-stage enforcement figure of the depolarizer 124 of the embodiment of the present invention 1; Fig. 6 is the two-stage enforcement figure of the depolarizer of the embodiment of the present invention 1; Fig. 7 is the two-stage band angle of wedge enforcement figure of the depolarizer 124 of the embodiment of the present invention 1; Fig. 8 is the single-stage depolarizer of the embodiment of the present invention 1 and the enforcement figure through light coupling; Fig. 9 is the two-stage depolarizer of the embodiment of the present invention 1 and the enforcement figure through light coupling; Figure 10 is the enforcement figure being coupled with angle of wedge two-stage depolarizer and through light of the embodiment of the present invention 1; In Figure 11, a part is to allow light beam directly depolarization crystal by applying above-mentioned Technology design is to reach the effect of depolarization, and b part is to allow after multi-beam coupling depolarization crystal by applying above-mentioned Technology design to reach the effect of depolarization again.Figure 12 allows by after fiber coupler, is coupling the beam into depolarization crystal by applying above-mentioned Technology design to reach the effect of depolarization, finally coupled fiber output again.Figure 13 allows by after fiber coupler, coupling the beam into depolarization crystal by applying above-mentioned Technology design to reach the effect of depolarization, afterwards directly collimation output.It should be noted that, the scheme of above enforcement is all to implement on the basis of the low coherent technique of the mode of operation laser beam in transient state or unstable state mould of application laser diode module 110 parts and photodiode components 130 parts generations.
The low polarization semiconductor laser of the present embodiment, be different from the laser taking optical fiber as depolarization device of conventional art, this low polarization semiconductor laser there is very high degree of bias stability (Figure 14) and to the insensitive characteristic of the variation of temperature (the low polarization semiconductor laser of experiment test embodiment is in the range of temperature of 20 ° of C to 35 ° of C, and the variable quantity of the degree of polarization of average every degree is only 0.06%)).And, for reaching higher degree of polarization stability, also can carry out temperature control to depolarization device, and implementation method more easily realizes than traditional low polarization semiconductor laser.
Because depolarizer 124 can allow low coherence's sharp irradiating light beam itself produce enough large phasic differences, the coherence of the room and time of reduction own, have between the light beam of optical path difference, have again can not be relevant characteristic; Depolarizer can allow low coherence's sharp irradiating light beam itself produce enough large phasic difference, and in the result of statistical measurement, light beam has low polarization characteristic, thereby makes the light source producing have high strength simultaneously, low relevant, the characteristic of low polarization.
The Lyot type depolarizer of the present embodiment has polytype, wherein:
The laser of the low relevant low polarization of RF modulation can match with the Lyot type depolarizer of single-stage birefringece crystal, and obtains depolarization, and depolarization performance can regulate crystal length to obtain the largest optimization of performance according to laser longitudinal module structure;
The low relevant linear polarization of RF modulation, or elliptically polarized light can match to reach depolarization with the Lyot type depolarizer of twin-stage birefringece crystal, and similarly depolarization performance can regulate crystal length to obtain the optimization in performance according to laser longitudinal module structure;
The low relevant linear polarization of RF modulation or elliptically polarized light can be carved angle birefringece crystal depolarizer with twin-stage band and combine to obtain depolarization, because carve the extra phase difference that introduce at whole optical aperture at angle, degree of polarization will further be reduced;
RF modulation, the semiconductor laser of low coherence's polarization maintaining optical fibre coupling can combine and obtain depolarization effect with single-stage or twin-stage optical fiber Lyot depolarizer, and depolarization performance can be by regulating polarization maintaining optical fibre length to optimize;
RF modulation, the Lyot depolarizer that the laser beam of multiple spatials of low coherence can be made of single birefringece crystal depolarization simultaneously.
Therefore, the laser producing by the low polarization semiconductor laser of the present invention has high strength, low relevant, the characteristic of low polarization; And, adopt the method that produces low coherence light beam after AC of the present invention and DC stack through semiconductor laser, make depolarizer of the present invention, specifically Lyot type depolarizer can be simply, effectively implement, be applicable to various conventional semiconductor lasers; And the present invention is not only applicable to general semiconductor laser, can also be applicable to multicolour laser, the laser of polychrome, by being its single depolarizer designing, can be obtained to low relevant, the low polarization laser output of polychrome; The last low polarization semiconductor laser of the present invention also has advantages of low cost, miniaturization functionalization, is conducive in numerous association area extensive uses.
Certainly, the above is only the preferred embodiment of the present invention, should be understood that; for those skilled in the art; do not departing under the prerequisite of the technology of the present invention principle, can also carry out some improvement and modification, these improvement and modification are also within protection scope of the present invention.
Claims (10)
1. a preparation method for the low polarization semiconductor laser based on low coherent technique, is characterized in that comprising the steps:
1. produce alternating current AC by the frequency of radio-frequency region;
2. will after a direct current DC and described alternating current AC stack, produce low degeneracy photon through semiconductor laser, this low degeneracy photon forms low coherence's broad band laser bundle through the chamber light amplification of semiconductor laser interior resonance, each longitudinal mode of being exported by semiconductor laser all obtains broadening;
3. by described part broad band laser bundle lead-in light detector, produce electrical feedback signal real-time response, that feed back to direct current DC or alternating current AC, to keep described semiconductor laser in transient state or unstable state mould pattern;
4. will after the described broad band laser bundle depolarization of residue, form laser low coherence, low polarization.
2. the preparation method of the low polarization semiconductor laser based on low coherent technique according to claim 1, is characterized in that: the response time of described photo-detector is greater than 100 ns.
3. the preparation method of the low polarization semiconductor laser based on low coherent technique according to claim 1, is characterized in that: described semiconductor laser is the semiconductor laser of many longitudinal mode outputs, and its bias voltage approaches critical value.
4. the preparation method of the low polarization semiconductor laser based on low coherent technique according to claim 1, it is characterized in that: also comprise the step that operates described semiconductor laser with multiple transverse modes, described transverse mode is by the continuous disturbance of rf modulations.
5. the preparation method of the low polarization semiconductor laser based on low coherent technique according to claim 1, is characterized in that: described semiconductor laser is to be coupled to monomode fiber output, to improve semiconductor laser optical quality.
6. the low polarization semiconductor laser of preparing according to any one method of claim 1 to 5, is characterized in that:
Comprise produce alternating current AC radio-frequency oscillator, produce the partially straight generator of direct current of direct current DC, obtained alternating current AC and direct current DC stack formed to the superimposer of semiconductor laser machine drive current;
Also comprise optical splitter and the depolarizer by the laser beam depolarization obtaining via optical splitter;
Also comprise an automatic power control system, described automatic power control system comprises the laser beam obtaining via optical splitter is converted into the feedback amplifier that the signal of telecommunication feeds back to the photo-detector of described direct current DC or described alternating current AC and this signal of telecommunication is amplified.
7. low polarization semiconductor laser according to claim 6, is characterized in that: also comprise a shunt, described shunt activates through radiofrequency signal, shunts at any time described laser drive current and controls the operating state of semiconductor laser.
8. low polarization semiconductor laser according to claim 6, is characterized in that: described radio-frequency oscillator comprises amplifier and/or rectifier.
9. low polarization semiconductor laser according to claim 6, is characterized in that: described depolarizer is the Lyot depolarizer according to the characteristics design of the coherence length of produced low coherence's laser and relevant collection of illustrative plates.
10. low polarization semiconductor laser according to claim 6, is characterized in that: described automatic power control system also comprises:
The reference voltage source predetermined according to the initial value of semiconductor laser power output, and one for the feedback signal comparison of benchmark and adjust the comparator of drive current direct current (DC) bias according to result relatively;
For arranging and maintain the temperature controller of semiconductor laser working temperature;
The current sense resistor of stable drive current is provided.
Priority Applications (1)
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| WO2018046005A1 (en) * | 2016-09-12 | 2018-03-15 | 无锡迈微光电科技有限公司 | Method for reducing self-mixing interference effect of laser system |
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| CN103018836A (en) * | 2012-12-26 | 2013-04-03 | 北京航天时代光电科技有限公司 | Optical fiber depolarizer with single-mode fiber serving as delay line |
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