CN104124357A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
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- CN104124357A CN104124357A CN201310143875.2A CN201310143875A CN104124357A CN 104124357 A CN104124357 A CN 104124357A CN 201310143875 A CN201310143875 A CN 201310143875A CN 104124357 A CN104124357 A CN 104124357A
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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Abstract
The invention provides an organic light-emitting device comprising a conductive anode substrate, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a composite cathode layer. The above-mentioned layers are successively laminated. The composite electrode layer includes an organosilicone micromolecule layer, a conductive oxide layer, and a metal layer, wherein the organosilicone micromolecule layer, the conductive oxide layer, and the metal layer are successively laminated. The material forming the organosilicone micromolecule layer is diphenyl di (o-tolyl) silicon, p-di(triphenylsilyl) benzene, 1,3-bis(triphenylsilyl)benzene or p-bis (triphenylsilyl)benzene; the conductive oxide layer is made from indium tin oxide, aluminum-zinc oxide or indium zinc oxide; and the metal layer is made of silver, aluminum, platinum or gold. Because of the composite cathode layer, the light can be scattered, thereby improving the luminous efficiency of the device. In addition, the invention also provides a preparation method of the organic light-emitting device.
Description
Technical field
The present invention relates to organic electroluminescence device, be specifically related to a kind of organic electroluminescence device and preparation method thereof.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in organic electroluminescent research.Utilize ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m
2, its luminous efficiency is 1.51lm/W, life-span to be greater than 100 hours.
In traditional luminescent device, it is to be transmitted into device outside that the light of device inside only has 18% left and right, and other part can consume at device outside with other forms, this be due between interface, there is refractive index poor (as the specific refractivity between glass and ITO, glass refraction is that 1.5, ITO is 1.8, light arrives glass from ITO, will there is total reflection), caused the loss of total reflection, thereby it is lower to cause the integral body of luminescent device to go out optical property.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides a kind of organic electroluminescence device and preparation method thereof.By prepare composite cathode layer on electron injecting layer, improved the luminous efficiency of organic electroluminescence device.
On the one hand, the invention provides a kind of organic electroluminescence device, comprise the conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the composite cathode layer that stack gradually, described composite cathode layer comprises the little molecular layer of organosilicon, conductive oxide layer and the metal level that lamination arranges successively
The material of the little molecular layer of described organosilicon is diphenyl two (o-tolyl) silicon (UGH1), p-bis-(triphenyl silicon) benzene (UGH2), 1, two (triphenyl silicon) benzene (UGH3) of 3-or two (triphenyl silicon) benzene (UGH4) of p-; The material of described conductive oxide layer is indium tin oxide (ITO), aluminium zinc oxide (AZO) or indium-zinc oxide (IZO); The material of described metal level is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au).
Preferably, the thickness of the little molecular layer of described organosilicon is 20～100nm.
Preferably, the thickness of described conductive oxide layer is 20～80nm.
Preferably, the thickness of described metal level is 200～500nm.
Composite cathode layer comprises the little molecular layer of organosilicon, conductive oxide layer and the metal level that lamination arranges successively.On electron injecting layer, prepare the little molecular layer of organosilicon, the organosilicon small molecule material of this layer, at room temperature just can carry out crystallization, after crystallization, can make film surface present wave structure, when light is during from this side outgoing, can change the refraction angle of light, make light carry out scattering, minimizing is to the light of device both sides transmitting, then prepare the conductive oxide layer being formed by the anode membrane material of commonly using, this layer can improve conductivity and the permeability of device, finally prepare metal level, can make light reflect back into bottom outgoing, this composite cathode layer finally can effectively improve the luminous efficiency of device.
Conductive anode substrate can be conducting glass substrate or organic PETG substrate that conducts electricity.Preferably, conductive anode substrate is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO).More preferably, conductive anode substrate is indium tin oxide glass.
The material of hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer is not done concrete restriction, and this area current material is all applicable to the present invention.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 20～80nm.
More preferably, the material of hole injection layer is MoO
3, thickness is 35nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20～60nm.
More preferably, the material of hole transmission layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine (NPB), thickness is 50nm.
Preferably, the luminescent material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), thickness is 5～40nm.
More preferably, the luminescent material of luminescent layer is two (the 9-ethyl-3-carbazole vinyl)-1 of 4,4'-, 1'-biphenyl (BCzVBi), and thickness is 30nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), thickness is 40～300nm.
More preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), and thickness is 250nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); Thickness is 0.5～10nm.
More preferably, the material of electron injecting layer is lithium fluoride (LiF), and thickness is 1nm.
On the other hand, the invention provides a kind of preparation method of organic electroluminescence device, comprise the following steps:
On conductive anode substrate, prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
On described electron injecting layer, prepare composite cathode layer: first by the mode of vacuum evaporation, on described electron injecting layer, prepare the little molecular layer of organosilicon, by the mode of magnetron sputtering, on the little molecular layer of described organosilicon, prepare conductive oxide layer again, finally by the mode of vacuum evaporation, in conductive oxide layer, prepare metal level, obtain organic electroluminescence device;
The material of the little molecular layer of described organosilicon is diphenyl two (o-tolyl) silicon, p-bis-(triphenyl silicon) benzene, 1, two (triphenyl silicon) benzene of 3-or two (triphenyl silicon) benzene of p-; The material of described conductive oxide layer is indium tin oxide (ITO), aluminium zinc oxide (AZO) or indium-zinc oxide (IZO); The material of described metal level is silver, aluminium, platinum or gold;
In described vacuum evaporation process, vacuum degree is 2 * 10
-3～5 * 10
-5pa, the material evaporation speed of the little molecular layer of described organosilicon is 0.1～1nm/s, the material evaporation speed of described metal level is 1～10nm/s; The accelerating voltage of described magnetron sputtering is 300～800V, and magnetic field is 50～200G, and power density is 1～40W/cm
2.
Preferably, the thickness of the little molecular layer of described organosilicon is 20～100nm.
Preferably, the thickness of described conductive oxide layer is 20～80nm.
Preferably, the thickness of described metal level is 200～500nm.
Conductive anode substrate can be conducting glass substrate or organic PETG substrate that conducts electricity.Preferably, conductive anode substrate is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO).More preferably, conductive anode substrate is indium tin oxide glass.
Preferably, anode substrate is carried out to following clean: adopt successively liquid detergent, each ultrasonic cleaning of deionized water 15 minutes, and then stand-by by oven for drying.
The material of hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer is not done concrete restriction, and this area current material is all applicable to the present invention.Hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer and luminescent layer all can adopt the mode of vacuum evaporation to prepare, and its concrete operations condition is not made particular determination.
Preferably, the temperature of vacuum evaporation is 100～500 ℃, and vacuum degree is 1 * 10
-3～1 * 10
-5pa.
Preferably, the material of hole injection layer is molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5), the thickness of hole injection layer is 20～80nm.
More preferably, the material of hole injection layer is MoO
3, thickness is 35nm.
Preferably, the material of hole transmission layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), thickness is 20～60nm.
More preferably, the material of hole transmission layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine (NPB), thickness is 50nm.
Preferably, the luminescent material of luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) or oxine aluminium (Alq
3), thickness is 5～40nm.
More preferably, the luminescent material of luminescent layer is two (the 9-ethyl-3-carbazole vinyl)-1 of 4,4'-, 1'-biphenyl (BCzVBi), and thickness is 30nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and 4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI), thickness is 40～300nm.
More preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), and thickness is 250nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); Thickness is 0.5～10nm.
More preferably, the material of electron injecting layer is lithium fluoride (LiF), and thickness is 1nm.
The invention provides a kind of organic electroluminescence device and preparation method thereof and there is following beneficial effect:
(1) organic electroluminescence device provided by the invention, there is composite cathode layer structure, composite cathode layer comprises the little molecular layer of organosilicon that lamination arranges successively, conductive oxide layer and metal level, the easy crystallization of organosilicon small molecule material, after crystallization, can make film surface present wave structure, this structure can change the refraction angle of light, make light carry out scattering, minimizing is to the light of device both sides transmitting, the conductive oxide layer being formed by the anode membrane material of commonly using, can improve conductivity and the permeability of device, metal level can make light reflect back into bottom outgoing, this composite cathode layer finally can effectively improve the luminous efficiency of device,
(2) preparation technology of organic electroluminescence device of the present invention is simple, and easily large area preparation is suitable for large-scale industrialization and uses.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device that makes of the embodiment of the present invention 1;
Fig. 2 is the brightness of organic electroluminescence device and the graph of a relation of luminous efficiency prepared by the embodiment of the present invention 1 and comparative example.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on ito glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is WO
3, thickness is 35nm; The material of hole transmission layer is TAPC, and thickness is 50nm; The material of luminescent layer is BCzVBi, and light emitting layer thickness is 30nm; The material of electron transfer layer is Bphen, and thickness is 250nm; The material of electron injecting layer is LiF, and thickness is 1nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the little molecular layer of the organosilicon stacking gradually, conductive oxide layer and metal level;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the little molecular layer of organosilicon that a layer thickness is 50nm on described electron injecting layer, material is UGH2, and evaporation speed is 0.2nm/s; By the mode of magnetron sputtering, prepare the conductive oxide layer that a layer thickness is 60nm on the little molecular layer of organosilicon again, material is ITO, and the accelerating voltage of magnetron sputtering is 400V, and magnetic field is 150G, and power density is 25W/cm
2; Finally by the mode of vacuum evaporation, prepare the metal level that a layer thickness is 300nm in conductive oxide layer, material is Ag, and evaporation speed is 3nm/s, and the vacuum degree of vacuum evaporation process is 8 * 10
-5pa.
Fig. 1 is the structural representation of the organic electroluminescence device that makes of the embodiment of the present invention 1.As shown in Figure 1, the present embodiment organic electroluminescence device, comprises ito glass substrate 1, hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6 and composite cathode layer 7 successively.Described composite cathode layer 7 comprises that a layer thickness is the metal level 73 that the little molecular layer 71 of organosilicon of 50nm, conductive oxide layer 72 that a layer thickness is 60nm and a layer thickness are 300nm successively.The structure of this organic electroluminescence device is: ito glass/WO
3/ TAPC/BCzVBi/Bphen/LiF/UGH2/ITO/Ag, wherein, slash "/" represents layer structure, lower same.
Embodiment 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on AZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is WO
3, thickness is 80nm; The material of hole transmission layer is TCTA, and thickness is 60nm; The material of luminescent layer is ADN, and thickness is 5nm; The material of electron transfer layer is Bphen, and thickness is 200nm; The material of electron injecting layer is CsN
3, thickness is 10nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the little molecular layer of the organosilicon stacking gradually, conductive oxide layer and metal level;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the little molecular layer of organosilicon that a layer thickness is 100nm on described electron injecting layer, material is UGH1, and evaporation speed is 0.1nm/s; By the mode of magnetron sputtering, prepare the conductive oxide layer that a layer thickness is 80nm on the little molecular layer of organosilicon again, material is AZO, and the accelerating voltage of magnetron sputtering is 800V, and magnetic field is 50G, and power density is 1W/cm
2; Finally by the mode of vacuum evaporation, prepare the metal level that a layer thickness is 200nm in conductive oxide layer, material is Al, and evaporation speed is 10nm/s, and the vacuum degree of vacuum evaporation process is 2 * 10
-3pa.
The structure of the organic electroluminescence device that the present embodiment provides is: AZO glass/WO
3/ TCTA/ADN/Bphen/CsN
3/ UGH1/AZO/Al.
Embodiment 3
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on IZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is V
2o
5, thickness is 20nm; The material of hole transmission layer is TCTA, and thickness is 30nm; The material of luminescent layer is Alq
3, thickness is 40nm; The material of electron transfer layer is TPBi, and thickness is 60nm; The material of electron injecting layer is CsF, and thickness is 0.5nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the little molecular layer of the organosilicon stacking gradually, conductive oxide layer and metal level;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the little molecular layer of organosilicon that a layer thickness is 20nm on described electron injecting layer, material is UGH3, and evaporation speed is 1nm/s; By the mode of magnetron sputtering, prepare the conductive oxide layer that a layer thickness is 20nm on the little molecular layer of organosilicon again, material is IZO, and the accelerating voltage of magnetron sputtering is 300V, and magnetic field is 200G, and power density is 40W/cm
2; Finally by the mode of vacuum evaporation, prepare the metal level that a layer thickness is 500nm in conductive oxide layer, material is Pt, and evaporation speed is 1nm/s, and the vacuum degree of vacuum evaporation process is 5 * 10
-5pa.
The structure of the organic electroluminescence device that the present embodiment provides is: IZO glass/V
2o
5/ TCTA/Alq
3/ TPBi/CsF/UGH3/IZO/Pt.
Embodiment 4
A preparation method for organic electroluminescence device, comprises the following steps:
(1) substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface;
(2) adopt the method for vacuum evaporation on IZO glass substrate, to prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The evaporation of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is vacuum evaporation, and evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5pa.Wherein, the material of hole injection layer is MoO
3, thickness is 30nm; The material of hole transmission layer is TAPC, and thickness is 50nm; The material of luminescent layer is DCJTB, and thickness is 5nm; The material of electron transfer layer is Bphen, and thickness is 40nm; The material of electron injecting layer is Cs
2cO
3, thickness is 1nm.
(3) on electron injecting layer, prepare composite cathode layer, obtain organic electroluminescence device; Composite cathode layer comprises the little molecular layer of the organosilicon stacking gradually, conductive oxide layer and metal level;
The preparation of composite cathode layer: first prepare by the mode of vacuum evaporation the little molecular layer of organosilicon that a layer thickness is 80nm on described electron injecting layer, material is UGH4, and evaporation speed is 0.2nm/s; By the mode of magnetron sputtering, prepare the conductive oxide layer that a layer thickness is 50nm on the little molecular layer of organosilicon again, material is ITO, and the accelerating voltage of magnetron sputtering is 400V, and magnetic field is 180G, and power density is 35W/cm
2; Finally by the mode of vacuum evaporation, prepare the metal level that a layer thickness is 280nm in conductive oxide layer, material is Au, and evaporation speed is 5nm/s, and the vacuum degree of vacuum evaporation process is 5 * 10
-4pa.
The structure of the organic electroluminescence device that the present embodiment provides is: IZO glass/MoO
3/ TAPC/DCJTB/Bphen/Cs
2cO
3/ UGH4/ITO/Au.
Comparative example
For embodying creativeness of the present invention, the present invention is also provided with comparative example, the difference of comparative example and embodiment 1 is that the negative electrode in comparative example is metal simple-substance silver (Ag), and thickness is 120nm, and the concrete structure of comparative example's organic electroluminescence device is: ito glass WO
3/ TAPC/BCzVBi/Bphen/LiF/Ag, respectively corresponding conductive anode substrate of glass, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode.
Adopt the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the current-voltage tester Keithley2400 test electric property of U.S. Keithley company, CS-100A colorimeter test brightness and the colourity of Japan Konica Minolta company, obtain the luminous efficiency of organic electroluminescence device with brightness change curve, to investigate the luminous efficiency of device, tested object is organic electroluminescence device prepared by embodiment 1 and comparative example.Test result as shown in Figure 2.
Fig. 2 is the brightness of organic electroluminescence device and the graph of a relation of luminous efficiency prepared by embodiment 1 and comparative example.Wherein, curve 1 is the brightness of organic electroluminescence device and the graph of a relation of luminous efficiency of embodiment 1 preparation; The brightness of organic electroluminescence device and the graph of a relation of luminous efficiency that curve 2 is prepared for comparative example.As can see from Figure 2, under different brightness, the luminous efficiency of the organic electroluminescence device of embodiment 1 preparation is large than comparative example all, the maximum luminous efficiency of the organic electroluminescence device of embodiment 1 preparation is 7.70lm/W, and that comparative example is only 4.90lm/W, meanwhile, along with the increase of brightness, the luminous efficiency of the organic electroluminescence device of embodiment 1 preparation slows down, and still can keep higher efficiency.This explanation, the easy crystallization of organosilicon small molecule material, after crystallization, can make film surface present wave structure, this structure can change the refraction angle of light, makes light carry out scattering, reduces to the light of device both sides transmitting, the conductive oxide layer being formed by the anode membrane material of commonly using, can improve conductivity and the permeability of device, metal level can make light reflect back into bottom outgoing, and this composite cathode layer finally can effectively improve the luminous efficiency of device.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (8)
1. an organic electroluminescence device, comprise the conductive anode substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the composite cathode layer that stack gradually, it is characterized in that, described composite cathode layer comprises the little molecular layer of organosilicon, conductive oxide layer and the metal level that lamination arranges successively
The material of the little molecular layer of described organosilicon is diphenyl two (o-tolyl) silicon, p-bis-(triphenyl silicon) benzene, 1, two (triphenyl silicon) benzene of 3-or two (triphenyl silicon) benzene of p-; The material of described conductive oxide layer is indium tin oxide, aluminium zinc oxide or indium-zinc oxide; The material of described metal level is silver, aluminium, platinum or gold.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of the little molecular layer of described organosilicon is 20～100nm.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described conductive oxide layer is 20～80nm.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described metal level is 200～500nm.
5. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
On conductive anode substrate, prepare successively hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
On described electron injecting layer, prepare composite cathode layer: first by the mode of vacuum evaporation, on described electron injecting layer, prepare the little molecular layer of organosilicon, by the mode of magnetron sputtering, on the little molecular layer of described organosilicon, prepare conductive oxide layer again, finally by the mode of vacuum evaporation, in conductive oxide layer, prepare metal level, obtain organic electroluminescence device;
The material of the little molecular layer of described organosilicon is diphenyl two (o-tolyl) silicon, p-bis-(triphenyl silicon) benzene, 1, two (triphenyl silicon) benzene of 3-or two (triphenyl silicon) benzene of p-; The material of described conductive oxide layer is indium tin oxide, aluminium zinc oxide or indium-zinc oxide; The material of described metal level is silver, aluminium, platinum or gold;
In described vacuum evaporation process, vacuum degree is 2 * 10
-3～5 * 10
-5pa, the material evaporation speed of the little molecular layer of described organosilicon is 0.1～1nm/s, the material evaporation speed of described metal level is 1～10nm/s; The accelerating voltage of described magnetron sputtering is 300～800V, and magnetic field is 50～200G, and power density is 1～40W/cm
2.
6. the preparation method of organic electroluminescence device as claimed in claim 5, is characterized in that, the thickness of the little molecular layer of described organosilicon is 20～100nm.
7. the preparation method of organic electroluminescence device as claimed in claim 5, is characterized in that, the thickness of described conductive oxide layer is 20～80nm.
8. the preparation method of organic electroluminescence device as claimed in claim 5, is characterized in that, the thickness of described metal level is 200～500nm.
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|---|---|---|---|---|
| CN109461834A (en) * | 2018-09-19 | 2019-03-12 | 云谷（固安）科技有限公司 | Light-emitting display device and preparation method thereof, electronic equipment |
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Application publication date: 20141029 |