CN104124310A - Preparation method of flexible CIGS (Copper Indium Gallium Selenide) film solar battery barrier layer - Google Patents
Preparation method of flexible CIGS (Copper Indium Gallium Selenide) film solar battery barrier layer Download PDFInfo
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- CN104124310A CN104124310A CN201410395198.8A CN201410395198A CN104124310A CN 104124310 A CN104124310 A CN 104124310A CN 201410395198 A CN201410395198 A CN 201410395198A CN 104124310 A CN104124310 A CN 104124310A
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- barrier layer
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- solar cells
- flexible
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- 230000004888 barrier function Effects 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 10
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 25
- 238000004544 sputter deposition Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 239000011888 foil Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention mainly relates to a preparation method of a flexible CIGS (Copper Indium Gallium Selenide) film solar battery barrier layer. The method is characterized in that a flexible metal material is taken as a substrate material of a battery. Specific to the aim of preventing the diffusion of harmful elements in a substrate from causing reduction in the battery performance, a tungsten-titanium alloy barrier layer is prepared by adopting a magnetron sputtering method. The material cost and preparation process cost of the diffusion baffle barrier are low, thereby reducing the production cost. Moreover, the crystallization quality of a back electrode and a photovoltaic absorption layer can be improved remarkably, and the optical performance of the battery is improved.
Description
One, technical field
The invention belongs to CIGS thin-film solar cell technical field, relate in particular to the preparation method on barrier layer in a kind of flexible substrate.
Two, background technology
Energy crisis and environmental pollution are the two large basic problems that the current whole world faces.Solar energy because of its area coverage wide, inexhaustible good characteristic, makes it to become a kind of important channel that solves energy crisis.The advantages such as CIGS thin-film solar cells is adjustable because of its material optical band gap, capability of resistance to radiation is strong, battery performance is stable, the low light level is good, make it to become one of photovoltaic material the most promising in thin-film solar cells.
The CIGS thin-film solar cells of flexible substrate is taking metal forming that can flexing or polymer foil as substrate.In space, application is more satisfactory photovoltaic device for it, CIGS flexible thin-film battery not only gravimetric specific power is high, and flexible folding, be not afraid of to touch and fall, can be applied in a lot of special occasions, comprise on roof, clothes, vehicle top and aerospace field etc., there is wide range of application and the market space.
At present, flexible CIGS thin-film solar cells is substrate mainly with polymer foil and metal forming, with respect to polymer foil substrate, metal foil substrate price is lower, can reduce the cost of battery, and, high efficiency device absorbed layer needs higher preparation temperature, metal foil substrate resistance to elevated temperatures is better, yet have above reasonable mechanical stability and thermal stability, and the softening temperature of polymer foil substrate is lower than 500 DEG C at 600 DEG C.
But prepare in the process of CIGS film at high temperature, the harmful element (Fe etc.) in metal foil substrate can diffuse in CIGS absorbed layer, reduce the opto-electronic conversion performance of battery.In order to stop the harmful element in substrate to diffuse in absorbed layer, before deposition Mo back electrode, first deposit one deck barrier layer, this barrier layer can effectively stop the diffusion of harmful element, promotes the photoelectric properties of flexible battery.
There are Cr, Al in the impurity barrier layer generally using at present
2o
3, SiO
x, Si
3n
4, the material such as ZnO, it is reported that Cr barrier layer can effectively stop the diffusion of the impurity elements such as Fe, but Cr element also can be diffused in absorbed layer, the lifting of battery performance is not played to effective effect.Al
2o
3, SiO
x, Si
3n
4, the barrier layer such as the ZnO problem that there will be cracking to depart from the preparation process of battery and use procedure, thereby reduce battery rate of finished products and useful life (Kessled F, Rudmann D.Technological aspects of flexible CIGS solar cells and modules[J] .Solar Energy, 2004,77:685-695).The present invention adopts tungsten-titanium alloy layer as the diffusion impervious layer between flexible substrate and back electrode.
Three, summary of the invention
The object of the present invention is to provide the preparation method of diffusion impervious layer in a kind of flexible CIGS thin-film solar cells, adopt barrier material provided by the invention and preparation method can improve the opto-electronic conversion performance of flexible CIGS thin-film solar cells, reduce manufacturing cost, improve stability prepared by large area film.
The present invention is achieved through the following technical solutions:
The preparation method on described flexible CIGS thin-film solar cells barrier layer is in flexible substrate, to adopt magnetically controlled sputter method to prepare one deck tungsten-titanium alloy barrier layer.
Described flexible substrate is the metal substrate such as stainless steel, copper, aluminium, nickel.
The target that described magnetron sputtering method is selected is commercially available tungsten-titanium alloy target, and purity is 3N.
In described magnetron sputtering method, the distance of substrate and target is 50-200mm.
Working gas in described magnetron sputtering method is that purity is the pure argon, pure nitrogen gas, purity oxygen of 4N or two or more mist wherein.
The base vacuum degree of described magnetron sputtering machine is 1.0 × 10
-4pa-1.0 × 10
-2pa, operating air pressure is 0.1Pa-10Pa.
In described magnetron sputtering method, base reservoir temperature is 20-250 DEG C, and sputtering time is 5-180min.
In described magnetron sputtering method, Sputtering power density is 0.02-10W/cm
2.
The thickness on described barrier layer is 0.01-3 μ m.
Four, brief description of the drawings
Fig. 1 is surface scan electron microscope (SEM) figure of the tungsten-titanium alloy layer prepared of the present invention.
Fig. 2 is cross section scanning electron microscopy (SEM) figure of the tungsten-titanium alloy layer prepared of the present invention.
Five, embodiment
Introduce embodiments of the invention below, but the present invention is limited to absolutely not embodiment.
Embodiment 1:
Prepare flexible battery barrier layer: select the substrate of stainless steel (S430) as flexible CIGS thin-film solar cells, after cleaning the substrate, put into magnetic control sputtering device.Working gas adopts argon gas, and base vacuum is 1.0E-2Pa, and operating air pressure is 0.1Pa, and Sputtering power density is 0.03W/cm
2, target-substrate distance is 200mm, sputtering time is 20min, the tungsten-titanium alloy layer of preparation 0.4 μ m.
At prepared barrier layer surface sputter back electrode molybdenum layer and photovoltaic absorption layer CIGS, after high annealing, adopt chemical bath deposition method to prepare cadmium sulfide layer, magnetron sputtering method is prepared native oxide zinc layer and Al-Doped ZnO layer, make flexible CIGS thin-film solar cells (Patrick Reinhard, Fabian Pianezzi.Flexible Cu (In, Ga) Se
2solar cells with reducedabsorber thickness[J] .Prog.Photvolt, 2013,2420).
Embodiment 2:
Prepare flexible battery barrier layer: select the substrate of Copper Foil as flexible CIGS thin-film solar cells, after cleaning the substrate, put into magnetic control sputtering device.Working gas adopts nitrogen, and base vacuum is 4.0E-3Pa, and operating air pressure is 3Pa, and Sputtering power density is 10W/cm
2, target-substrate distance is 50mm, sputtering time is 180min, the tungsten-titanium alloy layer of preparation 3 μ m.
At prepared barrier layer surface sputter back electrode molybdenum layer and photovoltaic absorption layer CIGS, after high annealing, adopt chemical bath deposition method to prepare cadmium sulfide layer, magnetron sputtering method is prepared native oxide zinc layer and Al-Doped ZnO layer, make flexible CIGS thin-film solar cells (Patrick Reinhard, Fabian Pianezzi.Flexible Cu (In, Ga) Se
2solar cells with reducedabsorber thickness[J] .Prog.Photvolt, 2013,2420).
Embodiment 3:
Prepare flexible battery barrier layer: select the substrate of nickel foil as flexible CIGS thin-film solar cells, after cleaning the substrate, put into magnetic control sputtering device.Working gas adopts argon gas, and base vacuum is 1.0E-4Pa, and operating air pressure is 10Pa, and Sputtering power density is 3W/cm
2, target-substrate distance is 100mm, sputtering time is 20min, the tungsten-titanium alloy layer of preparation 0.4 μ m.
At prepared barrier layer surface sputter back electrode molybdenum layer and photovoltaic absorption layer CIGS, after fast high annealing, adopt chemical bath deposition method to prepare cadmium sulfide layer, magnetron sputtering method is prepared native oxide zinc layer and Al-Doped ZnO layer, make flexible CIGS thin-film solar cells (Patrick Reinhard, Fabian Pianezzi.Flexible Cu (In, Ga) Se
2solar cells with reducedabsorber thickness[J] .Prog.Photvolt, 2013,2420).
Claims (9)
1. the preparation method on flexible CIGS thin-film solar cells barrier layer, is characterized in that, adopts magnetron sputtering technique deposition one deck barrier layer in flexible substrate.
2. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, is characterized in that, the material of the flexible substrate of employing is metal, is preferably: stainless steel, copper, aluminium, nickel.
3. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, is characterized in that, the target that described magnetron sputtering method is selected is commercially available tungsten-titanium alloy target, and purity is 3N.
4. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, is characterized in that, in described magnetron sputtering method, the distance of substrate and target is 50-200mm.
5. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, it is characterized in that, working gas in described magnetron sputtering method is that purity is pure argon, pure nitrogen gas, the purity oxygen of 4N, or two or more mist wherein.
6. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, is characterized in that, the base vacuum degree of magnetron sputtering machine is 1.0 × 10
-4pa-1.0 × 10
-2pa, operating air pressure is 0.1Pa-10Pa.
7. the preparation method of flexible CIGS thin film solar power block layer according to claim 1, is characterized in that, in described magnetron sputtering method, base reservoir temperature is 20-250 DEG C, and sputtering time is 5-180min.
8. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, is characterized in that, in described magnetron sputtering method, Sputtering power density is 0.02-10W/cm
2.
9. the preparation method on flexible CIGS thin-film solar cells according to claim 1 barrier layer, is characterized in that, the thickness on described barrier layer is 0.01-3 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410395198.8A CN104124310A (en) | 2014-08-12 | 2014-08-12 | Preparation method of flexible CIGS (Copper Indium Gallium Selenide) film solar battery barrier layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410395198.8A CN104124310A (en) | 2014-08-12 | 2014-08-12 | Preparation method of flexible CIGS (Copper Indium Gallium Selenide) film solar battery barrier layer |
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| Publication Number | Publication Date |
|---|---|
| CN104124310A true CN104124310A (en) | 2014-10-29 |
Family
ID=51769653
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| CN201410395198.8A Pending CN104124310A (en) | 2014-08-12 | 2014-08-12 | Preparation method of flexible CIGS (Copper Indium Gallium Selenide) film solar battery barrier layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473494A (en) * | 2018-12-27 | 2019-03-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin-film solar cells back electrode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819274A (en) * | 2005-12-22 | 2006-08-16 | 南开大学 | Thin-film solar battery barrier with flexible substrate and production thereof |
| CN102544138A (en) * | 2012-02-08 | 2012-07-04 | 南开大学 | Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer |
| CN103290376A (en) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | Diffusion impervious layer modification for flexible substrate |
-
2014
- 2014-08-12 CN CN201410395198.8A patent/CN104124310A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819274A (en) * | 2005-12-22 | 2006-08-16 | 南开大学 | Thin-film solar battery barrier with flexible substrate and production thereof |
| CN102544138A (en) * | 2012-02-08 | 2012-07-04 | 南开大学 | Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer |
| CN103290376A (en) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | Diffusion impervious layer modification for flexible substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473494A (en) * | 2018-12-27 | 2019-03-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin-film solar cells back electrode |
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Application publication date: 20141029 |