CN104124252A - Cake3d nand存储器及其形成方法 - Google Patents
Cake3d nand存储器及其形成方法 Download PDFInfo
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- CN104124252A CN104124252A CN201410315890.5A CN201410315890A CN104124252A CN 104124252 A CN104124252 A CN 104124252A CN 201410315890 A CN201410315890 A CN 201410315890A CN 104124252 A CN104124252 A CN 104124252A
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CN201410315890.5A CN104124252B (zh) | 2014-07-03 | 2014-07-03 | Cake3d nand存储器及其形成方法 |
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CN104124252A true CN104124252A (zh) | 2014-10-29 |
CN104124252B CN104124252B (zh) | 2017-02-15 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105575972A (zh) * | 2016-01-05 | 2016-05-11 | 清华大学 | 一种蛋糕结构的3d nor型存储器及其形成方法 |
CN107994030A (zh) * | 2017-11-16 | 2018-05-04 | 长江存储科技有限责任公司 | 一种基于氧化物-石墨烯薄膜堆叠的3d nand闪存制备方法及闪存 |
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US20100155818A1 (en) * | 2008-12-24 | 2010-06-24 | Heung-Jae Cho | Vertical channel type nonvolatile memory device and method for fabricating the same |
KR101845954B1 (ko) * | 2011-08-23 | 2018-05-18 | 에스케이하이닉스 주식회사 | 수직 구조의 메모리셀을 구비한 비휘발성메모리장치 및 그 제조 방법 |
CN103680611B (zh) * | 2012-09-18 | 2017-05-31 | 中芯国际集成电路制造(上海)有限公司 | 3d nand存储器以及制作方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105575972A (zh) * | 2016-01-05 | 2016-05-11 | 清华大学 | 一种蛋糕结构的3d nor型存储器及其形成方法 |
CN105575972B (zh) * | 2016-01-05 | 2018-12-07 | 清华大学 | 一种蛋糕结构的3d nor型存储器及其形成方法 |
CN107994030A (zh) * | 2017-11-16 | 2018-05-04 | 长江存储科技有限责任公司 | 一种基于氧化物-石墨烯薄膜堆叠的3d nand闪存制备方法及闪存 |
CN107994030B (zh) * | 2017-11-16 | 2019-02-22 | 长江存储科技有限责任公司 | 一种基于氧化物-石墨烯薄膜堆叠的3d nand闪存制备方法及闪存 |
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Inventor after: Deng Ning Inventor after: Wu Huaqiang Inventor after: Feng Wei Inventor after: Qian He Inventor after: Shu Qingming Inventor after: Zhu Yiming Inventor before: Deng Ning Inventor before: Wu Huaqiang Inventor before: Feng Wei Inventor before: Qian He |
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