CN104124242B - 分离式多栅极场效应晶体管 - Google Patents
分离式多栅极场效应晶体管 Download PDFInfo
- Publication number
- CN104124242B CN104124242B CN201410163578.9A CN201410163578A CN104124242B CN 104124242 B CN104124242 B CN 104124242B CN 201410163578 A CN201410163578 A CN 201410163578A CN 104124242 B CN104124242 B CN 104124242B
- Authority
- CN
- China
- Prior art keywords
- thickness
- grid
- length
- gate oxide
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 title abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 157
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 29
- 238000013461 design Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000003031 high energy carrier Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7856—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361815231P | 2013-04-23 | 2013-04-23 | |
US61/815,231 | 2013-04-23 | ||
US13/898,414 | 2013-05-20 | ||
US13/898,414 US8987793B2 (en) | 2013-04-23 | 2013-05-20 | Fin-based field-effect transistor with split-gate structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104124242A CN104124242A (zh) | 2014-10-29 |
CN104124242B true CN104124242B (zh) | 2017-04-12 |
Family
ID=51728376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410163578.9A Active CN104124242B (zh) | 2013-04-23 | 2014-04-22 | 分离式多栅极场效应晶体管 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8987793B2 (zh) |
CN (1) | CN104124242B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9048303B1 (en) | 2014-01-30 | 2015-06-02 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
US9337279B2 (en) | 2014-03-03 | 2016-05-10 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
KR102284888B1 (ko) | 2015-01-15 | 2021-08-02 | 삼성전자주식회사 | 반도체 장치 |
US11056396B1 (en) * | 2019-12-27 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091109A (en) * | 1998-05-11 | 2000-07-18 | Nec Corporation | Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region |
CN1675759A (zh) * | 2002-08-15 | 2005-09-28 | 飞思卡尔半导体公司 | 使用金属氧化物形成双重栅极氧化物器件的方法及其合成器件 |
CN1691294A (zh) * | 2004-04-28 | 2005-11-02 | 国际商业机器公司 | 鳍片场效应晶体管半导体结构及其制造方法 |
CN1967874A (zh) * | 2005-11-15 | 2007-05-23 | 国际商业机器公司 | 场效应晶体管及其形成方法 |
CN103000808A (zh) * | 2011-09-12 | 2013-03-27 | 索尼公司 | 薄膜晶体管及电子设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7148526B1 (en) * | 2003-01-23 | 2006-12-12 | Advanced Micro Devices, Inc. | Germanium MOSFET devices and methods for making same |
CN102122645B (zh) * | 2010-01-08 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | 集成电路结构、其制造方法和使用方法 |
US8664720B2 (en) * | 2010-08-25 | 2014-03-04 | Infineon Technologies Ag | High voltage semiconductor devices |
US8824212B2 (en) * | 2011-05-02 | 2014-09-02 | Macronix International Co., Ltd. | Thermally assisted flash memory with segmented word lines |
JP2013021277A (ja) * | 2011-07-14 | 2013-01-31 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
US8785273B2 (en) * | 2012-04-11 | 2014-07-22 | International Business Machines Corporation | FinFET non-volatile memory and method of fabrication |
-
2013
- 2013-05-20 US US13/898,414 patent/US8987793B2/en active Active
-
2014
- 2014-04-22 CN CN201410163578.9A patent/CN104124242B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091109A (en) * | 1998-05-11 | 2000-07-18 | Nec Corporation | Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region |
CN1675759A (zh) * | 2002-08-15 | 2005-09-28 | 飞思卡尔半导体公司 | 使用金属氧化物形成双重栅极氧化物器件的方法及其合成器件 |
CN1691294A (zh) * | 2004-04-28 | 2005-11-02 | 国际商业机器公司 | 鳍片场效应晶体管半导体结构及其制造方法 |
CN1967874A (zh) * | 2005-11-15 | 2007-05-23 | 国际商业机器公司 | 场效应晶体管及其形成方法 |
CN103000808A (zh) * | 2011-09-12 | 2013-03-27 | 索尼公司 | 薄膜晶体管及电子设备 |
Also Published As
Publication number | Publication date |
---|---|
CN104124242A (zh) | 2014-10-29 |
US20140312396A1 (en) | 2014-10-23 |
US8987793B2 (en) | 2015-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9287357B2 (en) | Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same | |
US8766364B2 (en) | Fin field effect transistor layout for stress optimization | |
US20090007036A1 (en) | Integrated Fin-Local Interconnect Structure | |
TWI600160B (zh) | 高電壓電晶體與低電壓非平面電晶體的單體集成 | |
US9105744B2 (en) | Semiconductor devices having inactive fin field effect transistor (FinFET) structures and manufacturing and design methods thereof | |
Veloso et al. | Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS | |
US9105724B2 (en) | Field effect transistor structure having one or more fins | |
US8932949B2 (en) | FinFET structure and method to adjust threshold voltage in a FinFET structure | |
US9385047B2 (en) | Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same | |
US20090001426A1 (en) | Integrated Fin-Local Interconnect Structure | |
CN104124242B (zh) | 分离式多栅极场效应晶体管 | |
WO2019066875A1 (en) | FIELD EFFECT TRANSISTORS HAVING A FERROELECTRIC OR ANTI-FERROELECTRIC GRID DIELECTRIC STRUCTURE | |
TWI699891B (zh) | 完全空乏型絕緣層上覆矽(fdsoi)上的橫向雙擴散金屬氧化半導體(ldmos)元件致能高輸入電壓 | |
Das et al. | Consideration of UFET architecture for the 5 nm node and beyond logic transistor | |
JP2013191760A (ja) | 半導体装置 | |
US20200286998A1 (en) | Multiple fin finfet with low-resistance gate structure | |
US11502079B2 (en) | Integrated device comprising a CMOS structure comprising well-less transistors | |
US10522681B2 (en) | Method of forming a FinFET having a relaxation prevention anchor | |
TW201828476A (zh) | 包括利用接觸電阻減少層的源極/汲極區之穿隧電晶體 | |
US9520391B1 (en) | Field effect transistor having delay element with back gate | |
US20200119156A1 (en) | Device and Method for Tuning Threshold Voltage by Implementing Different Work Function Metals in Different Segments of a Gate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1198071 Country of ref document: HK |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170308 Address after: Singapore Singapore Applicant after: Avago Technologies Fiber IP Singapore Pte. Ltd. Address before: American California Applicant before: Zyray Wireless Inc. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181031 Address after: Singapore Singapore Patentee after: Annwa high tech Limited by Share Ltd Address before: Singapore Singapore Patentee before: Avago Technologies Fiber IP Singapore Pte. Ltd. |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1198071 Country of ref document: HK |