CN104112802A - AlGaInP light emitting diode epitaxial wafer and preparation method thereof - Google Patents
AlGaInP light emitting diode epitaxial wafer and preparation method thereof Download PDFInfo
- Publication number
- CN104112802A CN104112802A CN201410299834.7A CN201410299834A CN104112802A CN 104112802 A CN104112802 A CN 104112802A CN 201410299834 A CN201410299834 A CN 201410299834A CN 104112802 A CN104112802 A CN 104112802A
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- layer
- gaas
- inalp
- limiting layer
- epitaxial wafer
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- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000002073 nanorod Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 7
- 239000000969 carrier Substances 0.000 abstract 2
- 239000012792 core layer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention relates to a AlGaInP light emitting diode epitaxial wafer and a preparation method thereof. An n-GaAs nanorod core layer is epitaxially grown on a patterned n-GaAs substrate, and then an n-InAlP limiting layer, a (AlxGa1-x)0.5In0.5P/(AlyGa1-y)0.5In0.5P multiple quantum well active layer, a p-InAlP limiting layer and a p-GaP covering layer are epitaxially grown on a side wall of the n-GaAs nanorod in sequence. The preparation method includes: adopting a metal organic chemical vapor deposition (MOCVD) method to epitaxially grow all the layers on the n-GaAs substrate. A core-multi-shell layer structure strengthens confinement of carriers and can inhibit recombination probability and scattering probability of the carriers in an interface position. An LED active region layer grows on a cylindrical surface of the nanorod, thereby increasing the light-emitting area, and greatly improving luminous efficiency. The nonplanar geometrical shape of the semiconductor nanorod can increase light extraction efficiency, and according to a quantum confinement effect, a multicolor luminous effect can be realized by changing the diameter of the nanorod.
Description
Technical field
The LED epitaxial slice that the invention belongs to the epitaxy technology field, particularly a kind of high efficiency AlGaInP of light-emitting diode, relates to LED epitaxial slice brightness raising and preparation method.
Background technology
In recent years, the potential application prospect that monodimension nanometer material is shown at numerous areas such as nano-devices due to its novel physics, chemical property, has become forward position and the study hotspot of current nano material.The diameter of monodimension nanometer material is little, there is significant quantum size effect, distinctive absorption, light transmitting, optical nonlinearity character, make it be widely used at aspects such as nonlinear optics instrument, molecular device, photoelectric device, novel electron device and semiconductor technologies.Monodimension nanometer material can be used for preparing the components and parts of nanoscale, as: laser, light-emitting diode, field-effect transistor etc.Owing to having higher luminous efficiency, semiconductor nanorods array is considered to a kind of desirable luminescent material.In addition, due to quantum confinement effect, nanometer rods has than the better luminescent properties of body material.Active layer using nanometer rods as light-emitting diode, can improve luminous efficiency greatly.Nonplanar geometry of nanometer rods can increase light extraction efficiency, and according to quantum constraint effect, by changing nanometer rods diameter, can realize multicolor luminous.
Current red yellow light LED mainly adopts plane Multiple Quantum Well (multiple quantum well, MQW) structure is as active layer, on substrate, grown quantum trap layer and quantum barrier layer are formed with source region successively, this plane quantum well active area has also determined the effective area of LED simultaneously, and therefore light-emitting area can be subject to the restriction of substrate dimension.In nanometer rods LED structure, the outer surface of nucleocapsid structure LED is all efficient lighting area, can make substrate be utilized effectively.Compared with traditional planar LED, nanometer rods LED has its unique advantage, has low defect concentration, accurate stick-up, there is not the stress being produced by material thermal expansion coefficient difference, in the time of large-sized Grown LED, do not have the buckling problem of substrate etc.
Summary of the invention
For overcoming the above problems, the invention provides a kind of AlGaInP LED epitaxial slice, it is characterized in that: the structure of described epitaxial wafer is: epitaxial growth n-GaAs nanometer rods stratum nucleare (1) on the n-GaAs substrate after patterning, then epitaxial growth n-InAlP limiting layer (2) successively on n-GaAs nanometer rods sidewall, (Al
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p active layer (3), p-InAlP limiting layer (4), p-GaP cover layer (5), described epitaxial wafer adopts n-GaAs core-many shell structurres.
Further, described epitaxial wafer adopts n-GaAs nanometer rods as stratum nucleare, and the draw ratio of nanometer rods is 0.8-5.
Further, described epitaxial wafer adopts n-InAlP as n limiting layer, n limiting layer Si
2h
6as N-shaped doped source; With p-InAlP layer, as p limiting layer, p limiting layer uses Cp2Mg as p-type doped source.
Further, described epitaxial wafer adopts (Al
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p multiple quantum well layer is as active layer, 0<x<0.3, and 0.5<y<1, quantum well number is 5-15.
The present invention also provides a kind of preparation method of AlGaInP LED epitaxial slice, comprises the following steps:
1) using the n-GaAs substrate after patterning as substrate;
2) on aforesaid substrate, adopt disposable n-GaAs nanometer rods stratum nucleare, n-InAlP the limiting layer, (Al of depositing successively of method (MOCVD) of metal organic chemical vapor deposition
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p multiple quantum well active layer, p-InAlP limiting layer, p-GaP cover layer.
Advantage of the present invention is: adopted n-GaAs core-many shell structurres.Core-many shell structurres have been strengthened the restriction of charge carrier and can have been suppressed recombination probability and the scattering probability of charge carrier in interface.In addition, due to quantum confinement effect, nanometer rods has than the better luminescent properties of body material.LED active region layer is grown in nanometer rods cylindrical surface, has increased light-emitting area, can greatly improve luminous efficiency.Nonplanar geometry of semiconductor nanorods can increase light extraction efficiency, and according to quantum constraint effect, by changing nanometer rods diameter, can realize multicolor luminous.
Brief description of the drawings
By describing in more detail exemplary embodiment of the present invention with reference to accompanying drawing, above and other aspect of the present invention and advantage will become more and be readily clear of, in the accompanying drawings:
Fig. 1 is the structural representation of a kind of AlGaInP LED epitaxial slice of the present invention.
Embodiment
Hereinafter, now with reference to accompanying drawing, the present invention is described more fully, various embodiment shown in the drawings.But the present invention can implement in many different forms, and should not be interpreted as being confined to embodiment set forth herein.On the contrary, it will be thorough with completely providing these embodiment to make the disclosure, and scope of the present invention is conveyed to those skilled in the art fully.
Hereinafter, exemplary embodiment of the present invention is described with reference to the accompanying drawings in more detail.
With reference to accompanying drawing 1, the invention provides a kind of AlGaInP LED epitaxial slice, it is characterized in that: the structure of described epitaxial wafer is: epitaxial growth n-GaAs nanometer rods stratum nucleare (1) on the n-GaAs substrate after patterning, then epitaxial growth n-InAlP limiting layer (2) successively on n-GaAs nanometer rods sidewall, (Al
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p active layer (3), p-InAlP limiting layer (4), p-GaP cover layer (5), described epitaxial wafer adopts n-GaAs core-many shell structurres.
Described epitaxial wafer adopts n-GaAs nanometer rods as stratum nucleare, and the draw ratio of nanometer rods is 0.8-5.
Described epitaxial wafer adopts n-InAlP as n limiting layer, n limiting layer Si
2h
6as N-shaped doped source; With p-InAlP layer, as p limiting layer, p limiting layer uses Cp2Mg as p-type doped source.
Described epitaxial wafer adopts (Al
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p multiple quantum well layer is as active layer, 0<x<0.3, and 0.5<y<1, quantum well number is 5-15.
The present invention also provides a kind of preparation method of AlGaInP LED epitaxial slice, comprises the following steps:
1) using the n-GaAs substrate after patterning as substrate;
2) on aforesaid substrate, adopt disposable n-GaAs nanometer rods stratum nucleare, n-InAlP the limiting layer, (Al of depositing successively of method (MOCVD) of metal organic chemical vapor deposition
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p multiple quantum well active layer, p-InAlP limiting layer, p-GaP cover layer.
The foregoing is only embodiments of the invention, be not limited to the present invention.The present invention can have various suitable changes and variation.All any amendments of doing within the spirit and principles in the present invention, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (5)
1. an AlGaInP LED epitaxial slice, it is characterized in that: the structure of described epitaxial wafer is: epitaxial growth n-GaAs nanometer rods stratum nucleare (1) on the n-GaAs substrate after patterning, then epitaxial growth n-InAlP limiting layer (2) successively on n-GaAs nanometer rods sidewall, (Al
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p active layer (3), p-InAlP limiting layer (4), p-GaP cover layer (5), described epitaxial wafer adopts n-GaAs core-many shell structurres.
2. AlGaInP LED epitaxial slice according to claim 1, is characterized in that: described epitaxial wafer adopts n-GaAs nanometer rods as stratum nucleare, and the draw ratio of nanometer rods is 0.8-5.
3. AlGaInP LED epitaxial slice according to claim 1, is characterized in that: described epitaxial wafer adopts n-InAlP as n limiting layer, n limiting layer Si
2h
6as N-shaped doped source; With p-InAlP layer, as p limiting layer, p limiting layer uses Cp2Mg as p-type doped source.
4. AlGaInP LED epitaxial slice according to claim 1, is characterized in that: described epitaxial wafer adopts (Al
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p multiple quantum well layer is as active layer, 0<x<0.3, and 0.5<y<1, quantum well number is 5-15.
5. an a kind of preparation method of AlGaInP LED epitaxial slice as claimed in claim 1, is characterized in that comprising the following steps:
1) using the n-GaAs substrate after patterning as substrate;
2) on aforesaid substrate, adopt disposable n-GaAs nanometer rods stratum nucleare, n-InAlP the limiting layer, (Al of depositing successively of method (MOCVD) of metal organic chemical vapor deposition
xga
1-x)
0.5in
0.5p/ (Al
yga
1-y)
0.5in
0.5p multiple quantum well active layer, p-InAlP limiting layer, p-GaP cover layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410299834.7A CN104112802A (en) | 2014-06-26 | 2014-06-26 | AlGaInP light emitting diode epitaxial wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410299834.7A CN104112802A (en) | 2014-06-26 | 2014-06-26 | AlGaInP light emitting diode epitaxial wafer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104112802A true CN104112802A (en) | 2014-10-22 |
Family
ID=51709522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410299834.7A Pending CN104112802A (en) | 2014-06-26 | 2014-06-26 | AlGaInP light emitting diode epitaxial wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104112802A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229394A (en) * | 2016-10-19 | 2016-12-14 | 武汉华星光电技术有限公司 | Micro-light emitting diode and manufacture method thereof and display |
| CN109411574A (en) * | 2017-08-16 | 2019-03-01 | 格芯公司 | Uniform semiconductor nanowires and nanometer sheet light emitting diode |
| CN110190162A (en) * | 2019-06-04 | 2019-08-30 | 深圳扑浪创新科技有限公司 | A kind of epitaxial structure of LED chip and preparation method thereof |
-
2014
- 2014-06-26 CN CN201410299834.7A patent/CN104112802A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229394A (en) * | 2016-10-19 | 2016-12-14 | 武汉华星光电技术有限公司 | Micro-light emitting diode and manufacture method thereof and display |
| CN106229394B (en) * | 2016-10-19 | 2019-06-07 | 武汉华星光电技术有限公司 | Micro- light emitting diode and its manufacturing method and display |
| US10319876B2 (en) | 2016-10-19 | 2019-06-11 | Wuhan China Star Optoelectronics Technology Co., Ltd | Method of forming micro light emitting diode |
| CN109411574A (en) * | 2017-08-16 | 2019-03-01 | 格芯公司 | Uniform semiconductor nanowires and nanometer sheet light emitting diode |
| CN110190162A (en) * | 2019-06-04 | 2019-08-30 | 深圳扑浪创新科技有限公司 | A kind of epitaxial structure of LED chip and preparation method thereof |
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Application publication date: 20141022 |
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| WD01 | Invention patent application deemed withdrawn after publication |