CN104107794B - Polyimide film curing - Google Patents
Polyimide film curing Download PDFInfo
- Publication number
- CN104107794B CN104107794B CN201310135725.7A CN201310135725A CN104107794B CN 104107794 B CN104107794 B CN 104107794B CN 201310135725 A CN201310135725 A CN 201310135725A CN 104107794 B CN104107794 B CN 104107794B
- Authority
- CN
- China
- Prior art keywords
- polyimide film
- spin coating
- product
- temperature
- ambient temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention provides a kind of polyimide film curing, and it comprises the steps: that spin coating has the product place ambient temperature of polyimide film be increased to 100 DEG C～140 DEG C, is incubated 0.5～1 hour；The product place ambient temperature that spin coating has polyimide film is increased to 190 DEG C～210 DEG C, is incubated 1～2 hour；The product place ambient temperature that spin coating has polyimide film is increased to 295 DEG C～305 DEG C, is incubated 1.8～2.5 hours；The product place ambient temperature that spin coating has polyimide film is cooled to room temperature.This polyimide film curing adopts the method for Discrete control temperature to make the moisture in polyimide film, solvent etc. fully to volatilize, and the polyimide film after so solidifying bubbling or film obscission would not occurring after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing.
Description
Technical field
The present invention relates to a kind of semiconductor device manufacturing method, particularly relate to a kind of polyimide film curing.
Background technology
At MEMS(Micro-Electro-MechanicalSystems, MEMS) product development manufacture process usually needs use polyimides as sacrifice layer or dielectric layer.The film build method of polyimides is identical with online photoresist, and they are all the methods adopting spin-coating film.But polyimides also needs to carry out imidization process in the temperature environment more than 250 DEG C enables polyimide film to solidify.Conventional polyimide film curing is as follows.First, spin coating have the product of polyimide film be positioned in baking oven；Then, set oven temperature as 300 DEG C, keep oven temperature to be 300 DEG C and carry out 2 hours imidization technical processs；Finally product is naturally cooled to room temperature.After these processing steps, polyimide film does not find any exception after solidifying.But after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing, there is bubbling or film obscission in polyimide film, as shown in Figure 1.Such polyimide film can affect product yield, and serious may result in product rejection.
Summary of the invention
Based on this, it is necessary to provide a kind of polyimide film curing, is there is bubbling or film obscission after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing in its polyimide film being prevented from after solidifying.
A kind of polyimide film curing, described polyimide film curing comprises the steps: that spin coating has the product place ambient temperature of polyimide film be increased to 100 DEG C～140 DEG C, is incubated 0.5～1 hour；The product place ambient temperature that spin coating has polyimide film is increased to 190 DEG C～210 DEG C, is incubated 1～2 hour；The product place ambient temperature that spin coating has polyimide film is increased to 295 DEG C～305 DEG C, is incubated 1.8～2.5 hours；The product place ambient temperature that spin coating has polyimide film is cooled to room temperature.
Wherein in an embodiment, also include before the described temperature environment that spin coating has the product of polyimide film be placed on 100 DEG C～140 DEG C keeps the step of 0.5～1 hour spin coating being had in the temperature environment that the product of polyimide film is placed on 60 DEG C～80 DEG C.
Wherein in an embodiment, carrying out in an oven in steps of described polyimide film curing.
Wherein in an embodiment, the step that the described product place ambient temperature that spin coating has polyimide film is cooled to room temperature is to have the product place ambient temperature of polyimide film to be cooled to room temperature spin coating by the method for natural cooling.
Wherein in an embodiment, the model of the polyimides that described polyimide film uses is PI2610.
Above-mentioned polyimide film curing adopts the method for Discrete control temperature to make the moisture in polyimide film, solvent etc. fully to volatilize, and the polyimide film after so solidifying bubbling or film obscission would not occurring after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing.
Accompanying drawing explanation
The polyimide film that the polyimide film curing that Fig. 1 is conventional processes product enlarged drawing after photoetching, burn into annealing process；
Fig. 2 is the polyimide film curing flow chart of an embodiment；
Fig. 3 is the polyimide film of the polyimide film curing process of embodiment product enlarged drawing after photoetching, burn into annealing process.
Detailed description of the invention
Refer to Fig. 2, the present invention provides a kind of polyimide film curing.This polyimide film curing comprises the steps:
Step S110, has spin coating the product place ambient temperature of polyimide film to be increased to 100 DEG C～140 DEG C, is incubated 0.5～1 hour.Temperature conditions in this step S110 mainly makes the moisture in polyimide film be volatilized fully with temperature retention time, prepares for follow-up imidization.Can first spin coating be had in the temperature environment that the product of polyimide film is placed on 60 DEG C～80 DEG C between this step S110 carrying out.The temperature environment of 60 DEG C～80 DEG C can make the moisture in polyimide film volatilize in advance, relative to 100 DEG C～and 140 DEG C of temperature environment moisture evaporations are slower, it is possible to make the better effects if that polyimide film solidifies.
Step S120, has spin coating the product place ambient temperature of polyimide film to be increased to 190 DEG C～210 DEG C, is incubated 1～2 hour.Temperature conditions in this step S120 mainly makes the solvent in polyimide film be volatilized fully with temperature retention time, and the imidization for below step does further preparation.
Step S130, has spin coating the product place ambient temperature of polyimide film to be increased to 295 DEG C～305 DEG C, is incubated 1.8～2.5 hours.Temperature conditions in this step S130 and temperature retention time are to ensure that polyimide film can imidization fully such that it is able to well solidify.
Step S140, has the product place ambient temperature of polyimide film to be cooled to room temperature by spin coating.The product place ambient temperature that spin coating has polyimide film is cooled to the method that room temperature can adopt natural cooling, it is also possible to by the method quickly cooled down.The method of natural cooling has saves energy and more stable the having of polyimide film after making solidification.
The above-mentioned steps that this polyimide film curing adopts can carry out in an oven, it is also possible to carries out in the equipment that other is suitable.It addition, the model of the polyimides used in the above-mentioned steps that adopts of this polyimide film curing is PI2610, polyimide film curing herein does not limit the model of polyimides certainly.The polyimides that this polyimide film curing uses can be replaced with the polyimides of other model by suitable adjustment parameter by those skilled in the art.
This polyimide film curing adopts the method for Discrete control temperature to make the moisture in polyimide film, solvent segmentation fully volatilize, and waits the moisture in polyimide film, solvent to carry out imidization again after obtaining volatilization fully.Would not there is bubbling or film obscission after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing in polyimide film after so solidifying.And conventional polyimide film curing is that the ambient temperature at polyimide film place is directly increased to the temperature required for imidization, thus the moisture in polyimide film and solvent are it is possible to occur not volatilizing completely, arise that, at polyimide film, the bubbling or film obscission that the moisture in polyimide film and solvent effect cause after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing.Therefore, is there is bubbling or film obscission after the PROCESS FOR TREATMENT such as follow-up photoetching, burn into annealing in the polyimide film that this polyimide film curing is prevented from after solidifying relative to conventional polyimide film curing.
Introduce this polyimide film curing below in conjunction with specific embodiments.
Embodiment 1,
The polyimide film curing of this embodiment comprises the steps:
First oven temperature is increased to 60 DEG C；The product that then spin coating has polyimide film is placed in an oven, and spin coating herein has the product of polyimide film to be the one in MEMS product, and polyimide film is to be formed by the method for spin coating by the polyimides that model is PI2610；Oven temperature is increased to 100 DEG C by the parameter then arranging baking oven, and keeps this temperature 0.5 hour；Oven temperature is increased to 190 DEG C by the parameter then arranging baking oven, and keeps this temperature 1 hour；Oven temperature is increased to 295 DEG C by the parameter arranging baking oven again, is incubated 1.8 hours；The parameter or the closedown baking oven that are finally not provided with baking oven make the ambient temperature in baking oven be cooled to room temperature.This completes the solidification of polyimide film, the spin coating being cured has the product of polyimide film to can be carried out follow-up technique.
Refer to Fig. 3, have the product of polyimide film to carry out photoetching, burn into annealing process the spin coating adopting this polyimide film curing to be cured.As it is shown on figure 3, the spin coating after photoetching, burn into annealing process has the product of polyimide film bubbling or film obscission do not occur.
Embodiment 2,
The polyimide film curing of this embodiment comprises the steps:
First oven temperature is increased to 80 DEG C；The product that then spin coating has polyimide film is placed in an oven, and spin coating herein has the product of polyimide film to be the one in MEMS product, and polyimide film is to be formed by the method for spin coating by the polyimides that model is PI2610；Oven temperature is increased to 140 DEG C by the parameter then arranging baking oven, and keeps this temperature 1 hour；Oven temperature is increased to 200 DEG C by the parameter then arranging baking oven, and keeps this temperature 2 hours；Oven temperature is increased to 305 DEG C by the parameter arranging baking oven again, is incubated 2 hours；The parameter or the closedown baking oven that are finally not provided with baking oven make the ambient temperature in baking oven be cooled to room temperature.This completes the solidification of polyimide film, the spin coating being cured has the product of polyimide film to can be carried out follow-up technique.
The product of polyimide film is had to carry out photoetching, burn into annealing process the spin coating adopting this polyimide film curing to be cured.Identical with embodiment 1, the spin coating after photoetching, burn into annealing process has the product of polyimide film bubbling or film obscission do not occur.
Embodiment 3,
The polyimide film curing of this embodiment comprises the steps:
The product that spin coating first has polyimide film is placed in an oven, and spin coating herein has the product of polyimide film to be the one in MEMS product, and polyimide film is to be formed by the method for spin coating by the polyimides that model is PI2610；Then oven temperature is increased to 120 DEG C, and keeps this temperature 0.7 hour；Oven temperature is increased to 210 DEG C by the parameter then arranging baking oven, and keeps this temperature 1.5 hours；Oven temperature is increased to 305 DEG C by the parameter arranging baking oven again, is incubated 2.5 hours；The parameter or the closedown baking oven that are finally not provided with baking oven make the ambient temperature in baking oven be cooled to room temperature.This completes the solidification of polyimide film, the spin coating being cured has the product of polyimide film to can be carried out follow-up technique.
The product of polyimide film is had to carry out photoetching, burn into annealing process the spin coating adopting this polyimide film curing to be cured.Identical with embodiment 1, the spin coating after photoetching, burn into annealing process has the product of polyimide film bubbling or film obscission do not occur.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to making some deformation and improvement, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (5)
1. a polyimide film curing, it is characterised in that described polyimide film curing comprises the steps:
The dispersion including polyimides is passed through spin coating method film forming on product；
The product place ambient temperature that spin coating has polyimide film is increased to 100 DEG C～140 DEG C, is incubated 0.5～1 hour, so that the moisture evaporation in polyimide film；
The product place ambient temperature that spin coating has polyimide film is increased to 190 DEG C～210 DEG C, is incubated 1～2 hour；
The product place ambient temperature that spin coating has polyimide film is increased to 295 DEG C～305 DEG C, is incubated 1.8～2.5 hours；
The product place ambient temperature that spin coating has polyimide film is cooled to room temperature.
2. polyimide film curing according to claim 1, it is characterized in that, also include before the described temperature environment that spin coating has the product of polyimide film be placed on 100 DEG C～140 DEG C keeps the step of 0.5～1 hour spin coating being had in the temperature environment that the product of polyimide film is placed on 60 DEG C～80 DEG C.
3. polyimide film curing according to claim 1, it is characterised in that carrying out in an oven in steps of described polyimide film curing.
4. polyimide film curing according to claim 1, it is characterized in that, the step that the described product place ambient temperature that spin coating has polyimide film is cooled to room temperature is to have the product place ambient temperature of polyimide film to be cooled to room temperature spin coating by the method for natural cooling.
5. the polyimide film curing described in claim any one of Claims 1-4, it is characterised in that the model of the polyimides that described polyimide film uses is PI2610.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310135725.7A CN104107794B (en) | 2013-04-18 | 2013-04-18 | Polyimide film curing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310135725.7A CN104107794B (en) | 2013-04-18 | 2013-04-18 | Polyimide film curing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104107794A CN104107794A (en) | 2014-10-22 |
| CN104107794B true CN104107794B (en) | 2016-07-06 |
Family
ID=51704894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310135725.7A Active CN104107794B (en) | 2013-04-18 | 2013-04-18 | Polyimide film curing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104107794B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6875252B2 (en) * | 2017-10-26 | 2021-05-19 | 信越化学工業株式会社 | Method of drying polyimide paste and method of manufacturing high photoelectric conversion efficiency solar cell |
| CN111061127A (en) * | 2019-12-31 | 2020-04-24 | 芯思杰技术(深圳)股份有限公司 | Polyimide curing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0605576D0 (en) * | 2006-03-20 | 2006-04-26 | Oligon Ltd | MEMS device |
| CN101831075B (en) * | 2010-05-18 | 2011-09-28 | 华东理工大学 | Modified polyimide film |
| US8507634B2 (en) * | 2010-12-22 | 2013-08-13 | Xerox Corporation | Polyimide intermediate transfer belt |
| CN102627780A (en) * | 2012-03-30 | 2012-08-08 | 北京化工大学 | Method for preparing submicron polyimide self-supporting film by adopting spin-coating method |
-
2013
- 2013-04-18 CN CN201310135725.7A patent/CN104107794B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104107794A (en) | 2014-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104107794B (en) | Polyimide film curing | |
| MY198347A (en) | Method of manufacturing gloves, glove, and emulsion composition for gloves | |
| US9508757B2 (en) | Array substrate and manufacturing method thereof, display panel and display apparatus | |
| JP2017528404A5 (en) | ||
| WO2017058004A8 (en) | Method of manufacturing a solar cell | |
| US10204933B2 (en) | Thin film transistor and method for manufacturing the same, and display panel | |
| WO2010081073A3 (en) | Passive electrical devices and methods of fabricating passive electrical devices | |
| EP2889907A3 (en) | Integrated circuits and fabrication methods thereof | |
| SG158828A1 (en) | Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction | |
| CN111916260A (en) | Flexible electrode and preparation method thereof | |
| CN103545169A (en) | Method for preventing wafer from buckling deformation | |
| CN107994134B (en) | Flexible substrate and preparation method thereof | |
| RU2016102002A (en) | METHOD FOR PRODUCING AGLOMERATES AND RESTORED IRON | |
| US20150262736A1 (en) | Graphene conducting wire production method | |
| CN106129062B (en) | The manufacturing method of insulating layer, the manufacturing method of array substrate and array substrate | |
| CN205236990U (en) | Novel ferrosilicium manufacture equipment | |
| CN104837224B (en) | The preparation process of high-temperature electric heating membrane | |
| CN104280619A (en) | Method for anti-interference processing of dielectric loss monitoring value of transformer bushing | |
| WO2015154432A1 (en) | Temperature processing method and device | |
| CN105590873A (en) | Bumping appearance controllable preparation method based on dry etching | |
| CN104779196B (en) | A kind of integrated circuit and its method of metal interlamination medium layer planarization | |
| CN103871869B (en) | The manufacture method of non-photosensitive polyimide passivation layer | |
| CN203774339U (en) | Table-board PIN passivation structure | |
| CN104538438A (en) | Graphene-doped materials, preparation method thereof, electrode, pixel structure and display device | |
| CN107808812A (en) | A kind of method of closed-loop control target platform temperature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170926 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |
|
| TR01 | Transfer of patent right |